# IGBT, 100 A, 2 V, 652 W, 1.2 kV, TO-247, 4 Pins

![Product image](https://novapart.co/image/farnell:2986353/)

**URL**: https://novapart.co/products/IKY50N120CH3XKSA1/igbt-100-a-2-v-652-w-12-kv-to-247-4-pins
**SKU**: IKY50N120CH3XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €5.6100
**Stock**: 200+
**Lead Time**: 358 days (indicative)

## Description

DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:652W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | - |
| Power Dissipation | 652W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 100A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2986353/)

IKY50N120CH3 

## **Features:** 

vj=175°C 

CE(sat) Q G 

http://www.infineon.com/igbt/ 

## **Applications:** 

|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKY50N120CH3|1200V|50A|2V|175°C|K50MCH3|PG-TO247-4-2|



Datasheet www.infineon.com 

2017-06-09 

IKY50N120CH3 

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## High�speed�switching�series�third�generation�IGBT 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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## High�speed�switching�series�third�generation�IGBT 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||1200|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=135°C|_I_C||100.0<br>50.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||200.0|A|
|Turn off safe operating area<br>_V_CE≤1200V,_T_vj≤175°C,_t_p=1µs|-||200.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||100.0<br>50.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||200.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤600V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=175°C|_t_SC||10|µs|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=135°C|_P_tot||652.0<br>173.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,1)<br>junction - case|_R_th(j-C)||-|-|0.23|K/W|
|Diode thermal resistance,1)<br>junction - case|_R_th(j-C)||-|-|0.42|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|



1) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included. 

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## High�speed�switching�series�third�generation�IGBT 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=50.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.00<br>2.50|2.35<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=50.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.90<br>1.85|2.30<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.25mA,_V_CE=_V_GE|5.1|5.8|6.5|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>4000|350<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=50.0A|-|17.0|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|3269|-|pF|
|Output capacitance|_C_oes||-|355|-||
|Reverse transfer capacitance|_C_res||-|199|-||
|Gate charge|_Q_G|_V_CC=960V,_I_C=50.0A,<br>_V_GE=15V|-|235.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=600V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=90nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|32|-|ns|
|Rise time|_t_r||-|28|-|ns|
|Turn-off delaytime|_t_d(off)||-|296|-|ns|
|Fall time|_t_f||-|29|-|ns|
|Turn-on energy|_E_on||-|2.30|-|mJ|
|Turn-off energy|_E_off||-|1.90|-|mJ|
|Total switchingenergy|_E_ts||-|4.20|-|mJ|



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## High�speed�switching�series�third�generation�IGBT 

**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** 

|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=600V,<br>_I_F=50.0A,<br>_di_F_/dt_=1200A/µs|-|255|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|3.40|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|33.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-620|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=600V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=90nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|31|-|ns|
|Rise time|_t_r||-|31|-|ns|
|Turn-off delaytime|_t_d(off)||-|397|-|ns|
|Fall time|_t_f||-|65|-|ns|
|Turn-on energy|_E_on||-|4.30|-|mJ|
|Turn-off energy|_E_off||-|4.00|-|mJ|
|Total switchingenergy|_E_ts||-|8.30|-|mJ|



**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=600V,<br>_I_F=50.0A,<br>_di_F_/dt_=1200A/µs|-|370|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|8.80|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|52.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-460|-|A/µs|



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**----- Start of picture text -----**<br>
100 LAFTT 700600 KP Pp td<br>= eA INT IN\<br>not for linear use<br>x co ee a ce 500 \<br>Be LA L U<br>WW | =) 10 RtTM TI =Zz 400 PEN\<br>adO a2)<br>65 ytFeTTT SS So 300 PP IN LT<br>ee PT TTT EP or \<br>SN° 1 a _————————————eeE——LUNE  eeeLEME ®. 200 \<br>PTTT<br>ee 100 \<br>0.1 0<br>SHH = LE| TN<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V) temperature<br>( T vj ≤ 175°C)<br>I C P tot<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
100 200<br>VGE=20V<br>90 TREELLI 175 Doty 17V<br>15V<br>80<br>aN TY<br>150 13V<br>2} NX 1/7<br>70<br>E 11V<br>E |Al fz S/n<br>125 9V<br>ee: 60 SLi<br>a) a) 7V<br>ee 50 ee 100 SWZ<br>5V<br>O O<br>40<br>fp ee NN<br>75<br>30<br>pf Ne 50 PONRA[PKXN<br>20 25 ye\\<br>Tee V\\N<br>10<br>Py) LAN<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5 6<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
200 200<br>VGE=20V Tvj = 25°C<br>Tvj = 175°C<br>175 ENA 17V \/ 175 are— a [/<br>15V<br>150 13V N 150 /<br>11V<br>Zz:Z NAQA //// 4] Zz:<br>125 9V 125<br>rd P NY ? rd /<br>& 7V XXX Xy/ &<br>3 100 \ SS s 3 100 / /<br>a 5V ‘ eeewes =| ow8<br>75 75<br>EL Nm Ee<br>50 SIS 50<br>25 25<br>0 aNN 0 ZA<br>0 1 2 3 4 5 6 2 4 6 8 10 12 14 16 18<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=175°C) ( V CE=20V)<br>4.5 1000 aa<br>IICC = 25A = 50A aa ee ee<br>Ss 4.0 IC = 100A Te cL a eeeeee ee ee<br>Pf T e) a td(off) S<br>3.5 tf<br>td(on)<br>tr<br>Ploy<br>3.0<br>| lye fe<br>o =<br>nT= 2.5 eo g 100 a a<br>a Heo aa or= aEe<br>O5 2.0 ~eeo FE= pOa ee rit ee eee<br>(LEE) SSS<br>1.5<br>a i eee<br>i ee<br>1.0<br>0.5 10<br>25 50 75 100 125 150 175 0 20 40 60 80 100<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V) (inductive load, T vj =175°C, V CE=600V,<br>I C I C<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>


_V_ GE =0/15V, _R_ G=10 Ω Figure E) 

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**----- Start of picture text -----**<br>
td(off) td(off)<br>tf tf<br>1000 td(on) 1000 td(on)<br>tr tr<br>F 1 a f ee o 1 a a o a<br>a e e ee eee a<br>aa ee e eee ee<br>ee ee ee ee e e<br>ow Pee} CO<br>ee<br>= =<br>oO oO<br>Zz Zz<br>100 100<br>5 a ee es 5 a es<br>E a a a ee a a<br>= a ee = a ee<br>a po e e eee ae ee ee ee<br>~ aa ee ee - a ee eeeee<br>fpeeper yyee ee reeeee ee e ee<br>10 10<br>0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =50A, Dynamic test circuit in I C =50A, R G=10 , Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
8 25<br>typ. Eoff<br>min. Eon<br>max. Ets<br>7<br>Ww<br>20<br>< =I f<br>O 6 ~>~ op) /<br>> SL Lu<br>Qa ~~ ~~ . 8 /<br>S5 5 — ~~ ohys o> 15 7 /<br>oc ~ NY a Wa<br>- ~ s Ww<br>.i 4 TN— a = ~ aio Yc /’<br>10<br>E NN Z 2 ,<br>UWWw= 3 ™ 5E 4 Z VY<br>5<br>oO . > Z i a<br>2<br>1 0<br>25 50 75 100 125 150 175 0 20 40 60 80 100<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 11. 

Figure 12. 

( _I_ C =1,25 mA) (inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _R_ G=10 Ω , Dynamic test Figure E) 

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**----- Start of picture text -----**<br>
16 9<br>Eoff Eoff<br>Eon Eon<br>14 Ets 8 Ets<br>7<br>. 12 oT |, J o e ee<br>Ww 4 Ww Pea<br>7)o L Pa ep)7) 6 “7<br>fo) 10 = fo) oa<br>> 8 “ane oo i? >t 5 _= a et iL<br>ii Wa oa i 4 c = a=<br>6<br>3<br>7 Le<br>=Bp 4 oeva = —_|e<br>~~ 2 =<br>y<br>2<br>1<br>0 0<br>0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>E E<br>**----- End of picture text -----**<br>


Figure 13. 

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**----- Start of picture text -----**<br>
(inductive load, T vj =175°C, V CE=600V,<br>V GE =0/15V, I C =50A, Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>


Figure 14. 

(inductive load, _V_ CE =600V, _V_ GE=0/15V, _I_ C =50A, _R_ G=10 , Dynamic test circuit Figure E) 

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**----- Start of picture text -----**<br>
12<br>Eoff<br>Eon<br>Da“<br>Ets<br>a<br>10<br>S a“<br>& a<br>i oa<br>8 8<br>(op) 7<br>@) 7<br>- ae<br>[ag i?<br>Wi 6 z<br>Zz “ce Za<br>Ww - a<br>g y<br>~~ |<br>4<br>Se fie<br>—_<br>7 2 : ~<br>0<br>400 450 500 550 600 650 700 750 800<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E<br>**----- End of picture text -----**<br>


Figure 15. 

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**----- Start of picture text -----**<br>
16 Ld<br>V CC<br>V CC<br>— = 240V / /<br>14 —- CT =960V Jf<br>12<br>S a,<br>WW /<br>x /<br>=<br>4 10 Es<br>ro)<br>Lu<br>E 8<br>=<br>S<br>ui<br>6<br>:<br>4<br>|<br>2<br>0<br>0 50 100 150 200 250 300<br>Q GE , GATE CHARGE [nC]<br>GE<br>V<br>**----- End of picture text -----**<br>


Figure 16. Typical ( _I_ C=50A) 

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**----- Start of picture text -----**<br>
T vj =175°C, V GE=0/15V,<br>**----- End of picture text -----**<br>


_I_ C =50A, _R_ G=10 Figure E) 

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**----- Start of picture text -----**<br>
1E+4 aa 450<br>| | Cies a ee es ee<br>= a a<br>Coes<br>Cres 400<br>——— —_—_——— x<br>a e ee 350 /<br>\ a<br>L 1000 R s 300 Ee<br>u PN w 4<br>ee<br>O iee ee Oe /<br>z PONa a 4 250 /<br>a i = 200 Z<br>& 5 /<br>~ O<br>100 150<br>ee ce Z|<br>ie<br>a ee eesees Oa[Sd 100 7v44<br>50<br>10 0<br>0 5 10 15 20 25 30 10 11 12 13 14 15 16 17 18<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical capacitance as a function of Figure 18. Typical short circuit collector current as a<br>collector-emitter voltage function of gate-emitter voltage<br>( V GE =0V, f=1MHz) ( V CE 600V, T vj 175°C)<br>45<br>D = 0.5<br>| 0.2 pe<br>40 Py EE. EE LLY Fou HT CHET<br>> = 0.1 0.1 NUE ee LH<br>3 EE 0.05<br>aT 35 Lu7 DNoti Seat ee c7aati<br>S 9 NEP 0.02 TATIT<br>0.01<br>= Z Fs Ne CTE<br>30<br>: : single pulse<br>S D ee aT<br>pe sn 40UN<br>0.01<br>kK=<= 25 i\iot) [TE] >xt beyNNR| | |<br>= S PATNAee ee<br>- Eh Fo CONECn<br>5 20 Tm P—TTIN MATTIE<br>9 CCID PAI AMIE EETETCETTl<br>: BENG PETIT<br>15<br>) LAMA<br>0.001<br>r LAI FIM UI i)<br>oer= ~> s7)2 Aee oe | Re-- T{ i<br>”> 105 Py fo} aANSN FE- eeALANa PEel|I eit: Ca=teiRe HITilill<br>| ++ a | eee i: 1 a 2 3 4 5<br>ri[K/W]: 0.027716 0.073554 0.124423 2.6E-3 3.2E-4<br>τ i[s]: 3.9E-4 2.7E-3 0.018807 0.524934 12.39161<br>Se<br>0 1E-4<br>10 12 14 16 18 20 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 19. Short circuit withstand time as a function of Figure 20. IGBT transient thermal resistance<br>gate-emitter voltage ( D = t p/T)<br>( V CE 600V, start at T vj ≤ 175°C)<br>C<br>I C(SC)<br>t SC c)th(j-<br>Z<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
800<br>BMT D = 0.5 e Tvj e  = 25°C, IF = 50A<br>= 0.2 sett A Te a Tvj = 175°C, IF = 50A<br>700<br>0.1<br>= pel<br>— 0.1 LSM 0.05 rh eS7A TEIl \<br>Zz 0.02 A7,| 600<br><x CCA 0.01 5<br>FTA TTI Ww<br>MinRe© PSNI single pulse xen LWLY =ieF 500 X\<br>LNNMEAUIITEUILT<br><x= 0.01 ENTIALdil LIT LIU uw> 400 NN ~<br>aw ECS AO tC «=| ‘ NI<br>WW eePT TNT 7A i O NX ~<br>IF2 INaa) a || oW 300 NNSS N ~ =<br>aZ 0.001 a Ry R2 a<br>200<br>s PTJfVI p= -- HiLF © .<br>AREAPA ee eee ect  cy i<br>100<br>7h EST i: 1 2 3 TE 4 5 Ty<br>ri[K/W]: 0.05893 0.16211 0.18928 5.4E-3 3.7E-4<br>τ i[s]: 3.8E-4 2.7E-3 0.01654 0.37453 11.69172<br>1E-4 0<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 400 600 800 1000 1200 1400<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>


Figure 21. 

( _D_ = _t_ p/T) 

Figure 22. Typical of diode ( _V_ R=600V) 

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**----- Start of picture text -----**<br>
12 70<br>Tvj = 25°C, IF = 50A Tvj = 25°C, IF = 50A<br>Tvj = 175°C, IF = 50A Tvj = 175°C, IF = 50A<br>es | |<br>60<br>10<br>oO ~~ x y<br>=a =<br><x4w 8 ~ > —_ Ww:w 50 Baaeeey y7<br>O oO v2<br>or> or> 40<br>uw Ww 4<br>6<br>: Zea<br>imor ow° 30 eaea<br>4 4<br>20<br>2<br>10 ef] tf]<br>0 0<br>400 600 800 1000 1200 1400 400 600 800 1000 1200 1400<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE<br>Q rr I rr<br>**----- End of picture text -----**<br>


Figure 23. 

( _V_ R=600V) 

Figure 24. 

( _V_ R=600V) 

11 

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IKY50N120CH3 

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**----- Start of picture text -----**<br>
0 200<br>Tvj = 25°C, IF = 50A Tvj = 25°C<br>-100 Tvj = 175°C, IF = 50A Tvj = 175°C<br>Fy) 175 Ee 7<br>~ /<br>-200<br>NON e e |<br>g =~ 150 I)<br>-300<br><, \ = /<br>125<br>eo=8 -400 NN: >» ~ 3imnd / /<br>ef TNS~OJe Es<br>2 -500 100<br>x<br>© \ \ Qo //<br>oO \ \ x /<br>-600<br>Po3 NES 75 i<br>-700<br>50<br>NN<br>-800<br>25<br>-900<br>PTT<br>-1000 0<br>FT y y L L<br>400 600 800 1000 1200 1400 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>


Figure 25. 

Figure 26. 

( _V_ R=600V) 

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**----- Start of picture text -----**<br>
3.5<br>IF = 25A<br>IF = 50A<br>IF = 100A<br>3.0<br>2.5<br>ke<br>I<br>O<br>><br>Ww ae<br>Q 2.0<br>aa<br><x<br>x<br>O<br>1.5<br>1.0<br>0.5<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>


Figure 27. 

12 

Datasheet 

2017-06-09 

IKY50N120CH3 

**==> picture [86 x 38] intentionally omitted <==**

## High�speed�switching�series�third�generation�IGBT 

## **PG-TO247-4-2** 

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**----- Start of picture text -----**<br>
M<br>A<br>E<br>A2 E2<br>R<br>b2<br>b4<br>E3 b6 H<br>2x<br>E1<br>1 2 3 4<br>b 4 3 2 1<br>e1 A1<br>e<br>b7<br>c<br>D3<br>D1 D D2<br>D4<br>N<br>L1<br>L<br>**----- End of picture text -----**<br>


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PACKAGE SURFACE ROUTE BETWEEN PIN 1 & PIN 2 WILL BE 5.1mm MIN. 

**==> picture [185 x 271] intentionally omitted <==**

**----- Start of picture text -----**<br>
MILLIMETERS<br>DIMENSION<br>MIN. MAX.<br>A 4.9 5.1<br>A1 2.31 2.51<br>A2 1.9 2.1<br>b 1.16 1.29<br>b2 1.36 1.49<br>b4 2.16 2.29<br>b6 1.16 1.45<br>b7 1.16 1.65<br>c 0.59 0.66<br>D 20.9 21.1<br>D1 22.3 22.5<br>D2 15.95 16.55<br>D3 1 1.35<br>D4 1.6 1.8<br>E 15.7 15.9<br>E1 3.9 4.1<br>E2 13.1 13.5<br>E3 2.58 2.78<br>e 2.54<br>e1 5.08<br>H 0.8 1<br>L 19.8 20.1<br>L1 2.55 2.85<br>M 0.97 1.57<br>N 3.24 3.44<br>R 1.9 2.1<br>**----- End of picture text -----**<br>


ALL b... AND c DIMENSIONS INCLUDING PLATING EXCEPT AREA OF CUTTING 

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**----- Start of picture text -----**<br>
DOCUMENT NO.<br>Z8B00182798<br>REVISION<br>01<br>SCALE 2:1<br>0 5 10mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>23.09.2016<br>**----- End of picture text -----**<br>


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IKY50N120CH3 

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## High�speed�switching�series�third�generation�IGBT 

## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

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IKY50N120CH3 

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## High�speed�switching�series�third�generation�IGBT 

## **Revision�History** 

IKY50N120CH3 

## **Revision:�2017-06-09,�Rev.�2.2** 

## Previous Revision 

|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2017-04-26|Final data sheet|
|2.2|2017-06-09|Update Figure 26|



15 

V�2.2 2017-06-09 

Datasheet 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/IKY50N120CH3XKSA1/igbt-100-a-2-v-652-w-12-kv-to-247-4-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/iky50n120ch3xksa1/igbt-1-2kv-100a-652w-to-247/dp/2986353)
---

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