# IGBT, 80 A, 1.85 V, 500 W, 1.2 kV, TO-247, 4 Pins

![Product image](https://novapart.co/image/farnell:2986352/)

**URL**: https://novapart.co/products/IKY40N120CS6XKSA1/igbt-80-a-185-v-500-w-12-kv-to-247-4-pins
**SKU**: IKY40N120CS6XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.2400
**Stock**: 10+
**Lead Time**: 190 days (indicative)

## Description

DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 4Pins |
| Product Range | TRENCHSTOP IGBT6 |
| Power Dissipation | 500W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2986352/)

IKY40N120CS6 

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High speed soft switching TRENCHSTOP TM _ IGBT 6 in Trench and Fieldstop<br>**----- End of picture text -----**<br>


## **Features:** 

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1200V TRENCHSTOP TM _ IGBT6 technology offering:<br>* High efficiency in hard switching and resonant<br>¢ Easy paralleling capability due to positive<br>coefficient in V CEsat<br>« Low EMI<br>g<br>**----- End of picture text -----**<br>


http://www.infineon.com/igbt/ 

## **Applications:** 

|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKY40N120CS6|1200V|40A|1.85V|175°C|K40MCS6|PG-TO247-4-2|



Datasheet www.infineon.com 

2018-05-07 

IKY40N120CS6 

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## Sixth�generation,�high�speed�soft�switching�series 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

2 

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Datasheet 

IKY40N120CS6 

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## Sixth�generation,�high�speed�soft�switching�series 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||1200|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||80.0<br>40.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||160.0|A|
|Turnoffsafeoperatingarea_V_CE≤1200V,_T_vj≤175°C|-||160.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||80.0<br>40.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||160.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤0.5µs,_D_<0.001)|_V_GE||±20<br>25|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||500.0<br>250.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|



## **Thermal�Resistance** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.30|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.78|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|



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## Sixth�generation,�high�speed�soft�switching�series 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.85<br>2.15<br>2.25|2.15<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.20<br>2.25|2.55<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.90mA,_V_CE=_V_GE|5.1|5.7|6.3|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1600|850<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|600|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|32.0|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2700|-|pF|
|Output capacitance|_C_oes||-|185|-||
|Reverse transfer capacitance|_C_res||-|120|-||
|Gate charge|_Q_G|_V_CC=960V,_I_C=40.0A,<br>_V_GE=15V|-|285.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,<br>_L_σ=70nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|27|-|ns|
|Rise time|_t_r||-|27|-|ns|
|Turn-off delaytime|_t_d(off)||-|315|-|ns|
|Fall time|_t_f||-|27|-|ns|
|Turn-on energy|_E_on||-|1.45|-|mJ|
|Turn-off energy|_E_off||-|1.55|-|mJ|
|Total switchingenergy|_E_ts||-|3.00|-|mJ|



V�2.1 2018-05-07 

Datasheet 

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IKY40N120CS6 

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## Sixth�generation,�high�speed�soft�switching�series 

**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** 

|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=600V,<br>_I_F=40.0A,<br>_di_F_/dt_=1650A/µs,<br>_L_σ=70nH,<br>_C_σ=67pF|-|255|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|2.60|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|39.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-450|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,<br>_L_σ=70nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|27|-|ns|
|Rise time|_t_r||-|29|-|ns|
|Turn-off delaytime|_t_d(off)||-|390|-|ns|
|Fall time|_t_f||-|55|-|ns|
|Turn-on energy|_E_on||-|2.05|-|mJ|
|Turn-off energy|_E_off||-|2.95|-|mJ|
|Total switchingenergy|_E_ts||-|5.00|-|mJ|



**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=600V,<br>_I_F=40.0A,<br>_di_F_/dt_=1650A/µs,<br>_L_σ=70nH,<br>_C_σ=67pF|-|360|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|5.30|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|53.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-580|-|A/µs|



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5 

IKY40N120CS6 

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160<br>VGE=20V<br>100<br>17V<br>140<br>ren Ati eon eaceal| aa ea 15V NON<br>not for linear use<br>— SS 120 13V e/a<br>11V<br>= a = SH<br>10 100 9V<br>7V<br>80<br>imSO fTeeCCM ComTei]ee im8 60 Pe \Y\f<br>= 4 ify<br>1<br>40<br>i a 7 eee<br>20<br>Oo Con yo<br>0.1 0<br>COT mr ) «= | _ EN<br>1 10 100 1000 0 1 2 3 4 5 6<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Forward bias safe operating area Figure 2. Typical output characteristic<br>( D =0, T vj 175°C; V GE =15V, pulse width ( T vj=25°C)<br>limited by Tvjmax)<br>160 160<br>VGE=20V Tvj = 25°C<br>Tvj = 175°C<br>140 PNY) 17V 140 Ef<br>15V<br>120 13V ANA 120<br>z 11V SSy lar<br>100 9V 100<br>: SW 2a<br>7V<br>80 80<br>NN]<br>PL 60 NW EL 60<br>Va ef<br>40 40<br>20 20<br>fr| pe<br>AS<br>0 0<br>U L L<br>0 1 2 3 4 5 6 2 4 6 8 10 12 14<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 3. Typical output characteristic Figure 4. Typical transfer characteristic<br>( T vj=175°C) ( V CE=20V)<br>I C I C<br>I C I C<br>**----- End of picture text -----**<br>


6 

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IKY40N120CS6 

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4.0 1000 a ESSS<br>ass ee<br>IC = 20A es a a a<br>IC = 40A<br>_ 3.5 | IC = 80A a a ee ee ee eees eee<br>é ue pee td(off) s oe<br>tf<br>3.0 td(on)<br>tr<br>g - = {--<br>100<br>2.5<br>[a Lu a a a<br>bu F= a e e sedes eens ee eecteee<br>2.0<br>E OQ a ee eee ee ee<br>oc<br>pee ees<br>1.5<br>10<br>|5 7 poa ss<br>ae5O~ 1.0 __—___——aa eeee eeee ee ee<br>0.5<br>PF | | | | | | ft<br>0.0 1<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 5. Typical collector-emitter saturation voltage as Figure 6. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V) (inductive load, T vj =175°C, V CE=600V,<br>V GE =0/15V, R G=9 Ω , Dynamic test circuit in<br>Figure E)<br>1000 aa<br>a<br>td(off) pT<br>1000 tf<br>td(on)<br>H— tr aSSSa——] 0 FSS<br>ee  a ee es or<br>td(off)<br>tf<br>td(on)<br>100 tr<br>Yn p pt hrs c Bee<br>100<br>~ es ip)~ p a ee eso<br>= a Sc ae ee ee ee<br>> poeee<br>SoSf eee Pe nprooespennenenssssesuenssssss<br>= owe | | | =<br>2)° 10 [_ee 2)° 10 areee<br>a a a<br>ee es<br>a poof |<br>1 1<br>0 5 10 15 20 25 30 35 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 7. Typical switching times as a function of gate Figure 8. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =40A, Dynamic test circuit in I C =40A, R G=9=9 , Dynamic test circuit in Figure<br>Figure E) E)<br>t<br>CEsat<br>V<br>t t<br>**----- End of picture text -----**<br>


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Datasheet<br>**----- End of picture text -----**<br>


_I_ C =40A, _R_ G=9=9 7 E) 

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8 10<br>typ. Eoff<br>min. 9 Eon<br>max. Ets<br>Ww 7 /<br>8<br>< =) ‘<br>FE & /¢<br>O 7p) /<br>Qo> 6 HMio) 7 v7<br>e)= = ae ~ssS fe)> 6 . /<br>ao > ~e, wv ¢<br>5 5<br>= = ~~ | ~ Ww 7 7 L S|<br>Ww: ~ O 4 / 7<br>= 4 y<br>: 4 PONIES Eee [2]<br>E SN aE<br>Wl ~ Ee 3 A Lp<br>uw Wa -<br>oO - 2 7 / =<br>~ 3 \Y~ |b"<br>1 / Lo<br>-<br>2 0<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 9. Gate-emitter<br>of junction<br>( I C=1.9mA)<br>**----- End of picture text -----**<br>


Figure 10. 

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**----- Start of picture text -----**<br>
(inductive load, T vj =175°C, V CE=600V,<br>V GE =0/15V, R G=9 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>


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10 6<br>Eoff Eoff<br>9 Eon Eon<br>Ets Ets<br>EE) LL) OE<br>“ 5 :<br>— 8 a ome a<br>7<br>(op)7) ”, icp)7) 4 o -*<br>—! 6 —! -*<br>> “ ya “"<br>©) , ©) oor<br>5 3<br>ii ? a<br>2 4 a“ ria ii =<br>° = 2<br>2<br>3<br>Fe eT Fe =a<br>n7n<br>i a<br>2<br>7<br>1<br>1<br>0 0<br>0 5 10 15 20 25 30 35 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =40A, Dynamic test circuit in I C =40A, R G=9 , Dynamic test circuit in<br>Datasheet Figure E) 8 Figure E)<br>E E<br>**----- End of picture text -----**<br>


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Datasheet<br>**----- End of picture text -----**<br>


2018-05-07 

IKY40N120CS6 

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**----- Start of picture text -----**<br>
8 3000<br>Eoff Tvj = 25°C<br>Eon Tvj = 175°C<br>7 Ets<br>= | oa<br>” 2500 |<br>5= 6 of o gS<br>Lu va w<br>2000<br>O 5 c .<br>ao o Yn<br>> ae<br>x a Lu<br>uw 4 > w 1500 \<br>Zz of ee a<br>aaZ 3 = —T aa ra ‘ N.<br>L 4 1000<br>-” - -<br>- bea<br>2<br>= T fs OSS<br>_<br>500<br>1<br>0 0<br>400 450 500 550 600 650 700 750 800 0 5 10 15 20 25 30 35<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] R G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical diode current slope as a function<br>function of collector emitter voltage gate resistor<br>(inductive load, T vj =175°C, V GE=0/15V, (inductive load, V CE =600V, V GE=0/15V,<br>I C R G=9=9 I C<br>/dt<br>F<br>E di<br>**----- End of picture text -----**<br>


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I C =40A, R G=9=9<br>Figure E)<br>**----- End of picture text -----**<br>


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16 1E+4<br>V CC Cies<br>— V CC = 240V 7 H Coes a ee ee<br>14 —7 a= 960V / y, iI Cres p ao<br>[CS<br>= 12 e s<br>o)<x // _LL 1000 Sa OS<br>F 10 & A<br>re) / Ww Oc<br>> 7 (S) NR<br>W 8 —r _ 2 A<br>pot = |p Nes}<br>WW<br>6<br>: 2.<br><x 100 a ee<br>.<br>4 ee<br>a<br>2<br>a a<br>0 10<br>0 50 100 150 200 250 300 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=40A) collector-emitter voltage<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


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Figure 16.<br>( V GE<br>**----- End of picture text -----**<br>


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Datasheet 

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**----- Start of picture text -----**<br>
RE 1 Se eet eet eet seenitieeani<br>= THA LT TTA LelA eral | OOo oo Cee Ooo Oo<br>= eg Y = eee TT<br>D = 0.5 D = 0.5<br>ree 0.1 A<traALA HMA SCMeeTAT<br>0.2 0.2<br>ge 0.1 tte 2 TMT 0.1 ||<br>0.1<br>ei caeniii 7 eae maria a 7 Al<br>0.05 0.05<br>gE 2 ee ei<br>0.02 0.02<br>a eae ae CWT UII & Sati see! aati eeemm<br>0.01 0.01<br>single pulse single pulse<br>uiFFSY A Af 7<br>ii5AE 0.01 a Po 20 su)A 5 0.01 EaFa@illieaallLe py<br>a cella 2 24 2 D etry cet Cn Ce<br>2 PLZT ACU TeR R 2 | SY EYiA Ro iatii<br>a A) I YZ --{l| s a -- Til<br>Fa e| Yf e e eF a)A ll<br>ANN AN UAE T T Cc ST Ti<br>i: 1 2 3 4 5 6 i: 1 2 3 4 5<br>ri[K/W]: 9.4E-4 0.056801 0.070049 0.170338 8.0E-3 1.6E-3 ri[K/W]: 0.17605 0.29816 0.29355 0.0141 2.2E-3<br>τ i[s]: 2.5E-5 3.4E-4 3.1E-3 0.016587 0.224027 2.909819 τ i[s]: 3.1E-4 2.8E-3 0.01518 0.20937 2.46001<br>0.001 | _ 0.001 /;dh a a |<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 17. Figure 18.<br>( IGBT D = t p/T)  transient thermal resistance functionDiode transientof pulse eetwidt  impedance as a<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>


Figure 18. ( _D_ = _t_ p/T) 

**==> picture [476 x 285] intentionally omitted <==**

**----- Start of picture text -----**<br>
800 SE | 8 SS<br>Tvj = 25°C, IF = 40A Tvj = 25°C, IF = 40A<br>Tvj = 175°C, IF = 40A Tvj = 175°C, IF = 40A<br>700 (| E 7 ss |<br>\ g<br>a N o o ee pe<br>600 6<br>z 7 \ Wl -<br>Lu Y ~<br>PRN ee<br>>PINON 500 Sye 5 =<br>400 4<br>\.<br>M;<br>W<br>300 3<br>ti N ~s tu<br>200 Pp] | SLES 2 —<br>100 aa 1 PP id ttt<br>0 0<br>500 750 1000 1250 1500 1750 2000 2250 2500 500 750 1000 1250 1500 1750 2000 2250 2500<br>di F /dt , DIODE CURRENT SLOPE [A/s] di F /dt , DIODE CURRENT SLOPE [A/s]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>


> Figure 19. Typical of diode ( _V_ R=600V) 

Figure 20. 

( _V_ R=600V) 

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**----- Start of picture text -----**<br>
80 0<br>Tvj = 25°C, IF = 40A Tvj = 25°C, IF = 40A<br>Tvj = 175°C, IF = 40A -200 Tvj = 175°C, IF = 40A<br>70 = i Nee<br>a NO<br>_ -400<br>e|/ <= 60 fo)ody, FeNE EE<br>i : oe -600 e e<br>a 7 \<br>50<br>O 4 4 =<br>-800<br>: “ligg | NA<br>pL 7 £<br>Q 40 OT 1000 NA<br>: Z ZO 2 |<br>= 4 pti 1200 A<br>uw 30 Ana s \\<br>uw et 1400 ttt AN<br>Bee q o<br>ait 20 A ZO se) -1600 \ Y<br>10<br>-1800<br>Pt ttt ted<br>0 -2000<br>500 750 1000 1250 1500 1750 2000 2250 2500 500 750 1000 1250 1500 1750 2000 2250 2500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>


Figure 21. Typical function ( _V_ R=600V) 

Figure 22. 

( _V_ R=600V) 

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**----- Start of picture text -----**<br>
3.0 160<br>Tj=25°C, IF = 40A Tvj = 25°C<br>Tj=175°C, IF = 40A Tvj = 175°C<br>= 140 EJ<br>_ f/f<br>ot 2.5 — ft im/<br>£ Tot /<br>TTS 120<br>2.0 ke<br>100<br>O ao<br>or =)<br>uw: 1.5 :) 80 PL<br>Z S<br>)Ice& 60 i}<br>1.0<br>=.<br>n<br>40<br>0.5<br>20 P| f tt i.<br>0.0 0<br>500 900 1300 1700 2100 2500 0 1 2 3 4 5 6<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I F<br>E<br>**----- End of picture text -----**<br>


Figure 23. Typical of diode ( _V_ R=600V) 

Figure 24. 

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**----- Start of picture text -----**<br>
4.0<br>IF = 20A<br>IF = 40A<br>3.5 IF = 80A<br>3.0<br>Lu<br>Oo<br><x 2.5<br>Kk<br>I<br>O<br>QSe 2.0<br>2 1.5 | | |fT<br>; 1.0 P| | tt<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>


Figure 25. 

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## Sixth�generation,�high�speed�soft�switching�series 

## **PG-TO247-4-2** 

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**----- Start of picture text -----**<br>
M<br>A<br>E<br>A2 E2<br>R<br>b2<br>b4<br>E3 b6 H<br>2x<br>E1<br>1 2 3 4<br>b 4 3 2 1<br>e1 A1<br>e<br>b7<br>c<br>D3<br>D1 D D2<br>D4<br>N<br>L1<br>L<br>**----- End of picture text -----**<br>


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PACKAGE SURFACE ROUTE BETWEEN PIN 1 & PIN 2 WILL BE 5.1mm MIN. 

**==> picture [185 x 271] intentionally omitted <==**

**----- Start of picture text -----**<br>
MILLIMETERS<br>DIMENSION<br>MIN. MAX.<br>A 4.9 5.1<br>A1 2.31 2.51<br>A2 1.9 2.1<br>b 1.16 1.29<br>b2 1.36 1.49<br>b4 2.16 2.29<br>b6 1.16 1.45<br>b7 1.16 1.65<br>c 0.59 0.66<br>D 20.9 21.1<br>D1 22.3 22.5<br>D2 15.95 16.55<br>D3 1 1.35<br>D4 1.6 1.8<br>E 15.7 15.9<br>E1 3.9 4.1<br>E2 13.1 13.5<br>E3 2.58 2.78<br>e 2.54<br>e1 5.08<br>H 0.8 1<br>L 19.8 20.1<br>L1 2.55 2.85<br>M 0.97 1.57<br>N 3.24 3.44<br>R 1.9 2.1<br>**----- End of picture text -----**<br>


ALL b... AND c DIMENSIONS INCLUDING PLATING EXCEPT AREA OF CUTTING 

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**----- Start of picture text -----**<br>
DOCUMENT NO.<br>Z8B00182798<br>REVISION<br>01<br>SCALE 2:1<br>0 5 10mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>23.09.2016<br>**----- End of picture text -----**<br>


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## Sixth�generation,�high�speed�soft�switching�series 

## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


**==> picture [7 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

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## Sixth�generation,�high�speed�soft�switching�series 

## **Revision�History** 

IKY40N120CS6 

## **Revision:�2018-05-07,�Rev.�2.1** 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2018-05-07|Final data sheet|



15 

V�2.1 2018-05-07 

Datasheet 

## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/IKY40N120CS6XKSA1/igbt-80-a-185-v-500-w-12-kv-to-247-4-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/iky40n120cs6xksa1/igbt-1-2kv-80a-500w-to-247/dp/2986352)
---

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