# IGBT, 650 V, 80 A, 395W, To-247, 1.65 Vsat
**URL**: https://novapart.co/products/IKW75N65RH5XKSA1/igbt-650-v-80-a-395w-to-247-165-vsat
**SKU**: IKW75N65RH5XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €4.1800
**Stock**: 500+
**Lead Time**: 323 days (indicative)
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 H5 CoolSiC Gen VI |
| Power Dissipation | 395W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.65V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3625317/)
## IKW75N65RH5
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TM
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**----- Start of picture text -----**
TRENCHSTOP [TM] 5 H5 IGBT co-packed with half-rated 6 th generation
CoolSiC [TM] Schottky barrier diode
Features and Benefits: C
¢ Ultra-low switching losses due to the combination of
TRENCHSTOP 5 and CoolSiC technology
¢ Benchmark efficiency in hard switching topologies
¢ Plug-and-play replacement of pure silicon devices
G
* Maximum junction temperature 175°C
E
* Qualified according to JEDEC for target applications
¢ Pb-free lead plating; ROHS compliant
* Complete product spectrum and PSpice models:
http://www.infineon.com/igbt/
—
Potential Applications: 7 ineop
¢ Industrial Power Supplies
-- IndustrialIndustrial SMPSUPS 7 4 £
* Energy Generation
- Solar String Inverter
* Energy Distribution
- Energy Storage 1
¢ Infrastructure — Charge 2
3
**----- End of picture text -----**
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW75N65RH5|650V|75A|1.65V|175°C|K75ERH5|PG-TO247-3|
Datasheet www.infineon.com
2020-07-27
IKW75N65RH5
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## Hybrid�CoolSiC[TM] �IGBT
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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## Hybrid�CoolSiC[TM] �IGBT
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax
_T_c=25°Cvaluelimitedbybondwire
_T_c=100°C|_I_C||80.0
75.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||300.0|A|
|Turn off safe operating area
_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||300.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax
_T_c=25°C
_T_c=100°C|_I_F||45.7
30.7|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||112.5|A|
|Gate-emitter voltage
TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20
±30|V|
|Powerdissipation_T_c=25°C
Powerdissipation_T_c=100°C|_P_tot||395.0
198.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,
wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw
Maximum of mounting processes: 3|_M_||0.6|Nm|
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,
junction - case|_R_th(j-c)||-|-|0.38|K/W|
|Diode thermal resistance,
junction - case|_R_th(j-c)||-|-|1.20|K/W|
|Thermal resistance
junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) Pulse current level depends on Tvj of diode chip, see also Fig. "Maximum pulse current as a function of junction temperature"
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## Hybrid�CoolSiC[TM] �IGBT
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=75.0A
_T_vj=25°C
_T_vj=125°C
_T_vj=175°C|-
-
-|1.65
1.85
1.95|2.10
-
-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=30.0A
_T_vj=25°C
_T_vj=125°C
_T_vj=175°C|-
-
-|1.35
1.55
1.65|1.50
-
-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.75mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V
_T_vj=25°C
_T_vj=175°C|-
-|-
2500|1000
-|µA|
|Zero gate voltage collector current|_I_CES|_V_CE=480V,_V_GE=0V
_T_vj=25°C|-|-|30|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=75.0A|-|105.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V
_f_=250kHz|-|4000|-|pF|
|Output capacitance|_C_oes||-|460|-||
|Reverse transfer capacitance|_C_res||-|15|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=75.0A,
_V_GE=15V|-|168.0|-|nC|
|Internal emitter inductance
measured 5mm (0.197 in.) from
case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,
_V_CC=400V,_I_C=37.5A,
_V_GE=0.0/15.0V,
_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,
_L_σ=30nH,_C_σ=30pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|26|-|ns|
|Rise time|_t_r||-|9|-|ns|
|Turn-off delaytime|_t_d(off)||-|180|-|ns|
|Fall time|_t_f||-|15|-|ns|
|Turn-on energy|_E_on||-|0.36|-|mJ|
|Turn-off energy|_E_off||-|0.30|-|mJ|
|Total switchingenergy|_E_ts||-|0.66|-|mJ|
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## Hybrid�CoolSiC[TM] �IGBT
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,
_V_CC=400V,_I_C=7.5A,
_V_GE=0.0/15.0V,
_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,
_L_σ=30nH,_C_σ=30pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|26|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|3|-|ns|
|Turn-off delaytime|_t_d(off)||-|220|-|ns|
|Fall time|_t_f||-|35|-|ns|
|Turn-on energy|_E_on||-|0.07|-|mJ|
|Turn-off energy|_E_off||-|0.08|-|mJ|
|Total switchingenergy|_E_ts||-|0.15|-|mJ|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,
_V_CC=400V,_I_C=37.5A,
_V_GE=0.0/15.0V,
_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,
_L_σ=30nH,_C_σ=30pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|24|-|ns|
|Rise time|_t_r||-|12|-|ns|
|Turn-off delaytime|_t_d(off)||-|205|-|ns|
|Fall time|_t_f||-|18|-|ns|
|Turn-on energy|_E_on||-|0.45|-|mJ|
|Turn-off energy|_E_off||-|0.40|-|mJ|
|Total switchingenergy|_E_ts||-|0.85|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,
_V_CC=400V,_I_C=7.5A,
_V_GE=0.0/15.0V,
_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,
_L_σ=30nH,_C_σ=30pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|240|-|ns|
|Fall time|_t_f||-|40|-|ns|
|Turn-on energy|_E_on||-|0.09|-|mJ|
|Turn-off energy|_E_off||-|0.11|-|mJ|
|Total switchingenergy|_E_ts||-|0.20|-|mJ|
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IKW75N65RH5
## TM Hybrid CoolSiC IGBT
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**----- Start of picture text -----**
400 90
360 Nae 80
320 PN 70 TQ
280
ef \Je 60 |
pg) 240 NE
50
PP 200 \ 8 a
40
Pp Ng 160 ooN ]8 FA:
30
PIN de Fe
120
fee ee 20
8040 ee 10 en
Ne
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]
Figure 1. Figure 2.
temperature temperature
( Power T vj ≤ 175°C) dissipation as a function of case ( i V GE ≥ T vj ≤ 175°C) as a function of case
300 300
270 270
SRRnn) Seen
240 240
VGE=20V VGE=20V
eA) eZre
18V 18V
210 210
15V 15V
| 4s 180 180 |
eo) 12V Se 12V ee
150 10V 150 10V
8V 8V
120 120
as 7V | 7V eer
90 6V 90 6V
5V 5V
: i’ arn : i" Za
60 60
30 30
Gn) ANeneen neZennne
AN ||lCOL_LA
0 0
0 1 2 3 4 5 0 1 2 3 4 5
V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]
P tot I C
I C I C
**----- End of picture text -----**
Figure 3. Typical ( _T_ vj=25°C)
Figure 4. Typical ( _T_ vj=150°C)
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IKW75N65RH5
TM
**==> picture [232 x 313] intentionally omitted <==**
**----- Start of picture text -----**
300 Lt n
Tj=25°C
270 Tj=150°C
Ed LH
240
e ee
Co
< 210
im
pf
& 180 |
.3s | lf
w 150
ee
120
|
ui |
oe) ee
90
°. /
60
30
AL
0
4
2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5
V GE , GATE-EMITTER VOLTAGE [V]
Figure 5. Typical transfer characteristic
( V CE=20V)
I C
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**==> picture [236 x 286] intentionally omitted <==**
**----- Start of picture text -----**
2.50 Ld
IC=18.75A
IC=37.5A
2.25 IE IC=75A
z
OoEe 2.00 — a 1
ra
2
EIE
oa 1.50
© 1.25
ee
3 1.00
2_ f | | i] [|]
0.75
0.50
eeeee
25 50 75 100 125 150 175
T vj , JUNCTION TEMPERATURE [°C]
CEsat
V
**----- End of picture text -----**
Figure 6. Typical a function ( _V_ GE=15V)
**==> picture [471 x 286] intentionally omitted <==**
**----- Start of picture text -----**
1000 a SS SS SS 1000 a SS SS ES ES
|1 td(off) a ee ee | td(off) Ee ee
I tf eS i tf a a
td(on) td(on)
tr tr
FE | a fs ee ee | FE es b e e ee e ee eee
f p | | CT | a ae
p t t | | | | | of oe TT |
[Litt
100 100
ip) a PeT erry:Ll L poettit ee|
uw poea aOP ip) aa aeselee
= a a ee ee = a ee ee es ee eee
-Q= a [ee] eeotee ee ee= = a Ea -aeeeeee e eeee
= ee aae~
= .
eft = ee
2)- 10 Se)2) 10 a a
aa ee ss es a a
aa a ee ee ee aeeee ee
ee a Deee
PF | | | | rt dT | Pf ft | hc] |
1 1
0 25 50 75 100 125 150 175 200 225 0 5 10 15 20 25 30 35 40
I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]
t t
**----- End of picture text -----**
Figure 7.
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**----- Start of picture text -----**
Datasheet
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**==> picture [151 x 29] intentionally omitted <==**
**----- Start of picture text -----**
(inductive load, T vj =150°C, V CE=400V,
V GE =15/0V, R G=9 Ω , Dynamic test
Figure E)
**----- End of picture text -----**
Figure 8. Typical **resistor**
**==> picture [151 x 29] intentionally omitted <==**
**----- Start of picture text -----**
(inductive load, T vj =150°C, V CE=400V,
V GE =15/0V, I C =37.5A, Dynamic test
Figure E)
**----- End of picture text -----**
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TM
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**----- Start of picture text -----**
1000 aa 5.5
1 H td(off) a aa a I— typ. |
I tf a ee ee ee eee _
td(on) 5.0
I a eeee
tr
p od e)
-f [||]:
iFip) 100 aa es Qi 4.0 ee
im poa a a (e)
a
3.5
- ee eee
-
<= a Wy a
3.0
a ee ee —
=
3
2)7 10 poREa hake Ww== 2.5 ™
ee
a eseo) 2.0
1.5
1 1.0
25 50 75 100 125 150 175 25 50 75 100 125 150
T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]
Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a function
junction temperature of junction temperature
(inductive load, V CE =400V, V GE=15/0V, ( I C=0.75mA)
I C =37.5A, R G=9 , Dynamic test circuit in
Figure E)
14 2.50
Eoff Eoff
Eon 2.25 Eon
Ets 7 Ets
12
7
z , z 2.00
(ep) 10 / (¢p) “
nm 7 Ww 1.75
2p) / ” :
—! uA a] 1.50
8
ow J/ w ra
2 / Wi 1.25
6
g / (ec g 1.00 if
E / 4 E 0.75 : <
4
¢
; 4 Bf ee
0.50
- ra ,J ° = = Pa
2 4
Ae aa
0.25
0 0.00
[aa] o*ae pt ey te
0 25 50 75 100 125 150 175 200 225 0 5 10 15 20 25 30 35 40
I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]
t
GE(th)
V
E E
**----- End of picture text -----**
Figure 11.
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**----- Start of picture text -----**
Datasheet
**----- End of picture text -----**
**==> picture [151 x 29] intentionally omitted <==**
**----- Start of picture text -----**
(inductive load, T vj =150°C, V CE=400V,
V GE =15/0V, R G=9 Ω , Dynamic test
Figure E)
**----- End of picture text -----**
Figure 12.
**==> picture [151 x 29] intentionally omitted <==**
**----- Start of picture text -----**
(inductive load, T vj =150°C, V CE=400V,
V GE =15/0V, I C =37.5A, Dynamic test
Figure E)
**----- End of picture text -----**
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TM
**==> picture [474 x 642] intentionally omitted <==**
**----- Start of picture text -----**
1.2 1.2
Eoff Eoff
Eon Eon
Ets Ets
1.0 1.0
z z a
E 4 o£ es
tt 0.8 poe if 0.8 jena
o o 7
O (e) 7
aa] a] ra
O O
om ow “7
Ww 0.6 Ww 0.6
Zz Zz we
Lu Ww Pa
oO iV) on _ -_
= _-— = -_—
0.4 0.4
E= >. F= ot
a in aaa
0.2 0.2
0.0 0.0
25 50 75 100 125 150 175 200 250 300 350 400 450 500
T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]
Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a
function of junction temperature function of collector emitter voltage
(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,
I C =37.5A,37.5A R G=9 , DDynamicictesttest circuitcircuit iin I C = 3 7.5A,7.5A R G=9 , D Dynamicictesttest circuitcircuit iin
Figure E) Figure E)
0.1 —————————————— eee 16 |
Tvj=175°C 130V
x ————————————— 520V
Tvj=150°C 14 —
ima 0.01 a Tvj=100°C ss = 7 4
~ poeeeNNNeee ee
Tvj=25°C 12
0.001
oOFe ee ee eeeee LO)
Oo poeeNN eee el1 en a< 10 y, y/,
1E-4
O es | ee ee ee ay Lay Ae i 8
uw ee ee ee ee ee) 2 eee E
1E-5
e¢ {fou i|\\i “77 || 5s L
6
> ee Cs A x
1E-6
\Wi) —————————————EEE
i 1E-7 aEEaa eee 2
ee es
a ee
1E-8 ee ee 0
100 200 300 400 500 600 700 0 20 40 60 80 100 120 140 160 180
V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]
E E
GE
V
I CES
**----- End of picture text -----**
Figure 15.
Figure 16. Typical ( _I_ C=75A)
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TM
**==> picture [469 x 320] intentionally omitted <==**
**----- Start of picture text -----**
Cies
1E+4 fr Coes | fT TT rr i a
I| Cres en a fi! a eeeyyy mnt
—— — —— MTA Tt |
D=0.5
ee 0.1 | ai 0.2 |
1000
0.1
0.05
SSS
Ww 8 He 0.02
a w |_| vey A HM pe anil
z a es es es ees fe" es0240S0 0.01
100 single pulse
eeees Mei |TP Hil
oO a a fl.
ee A aml
0.01
a i ee ee ee ee A eT
10
P|eneen gsi P ATNI)A s oie, yt ote ic a|
—————————a TAU UN CU ETT TI FT
i: 1 2 3 4 5 6
ri[K/W]: 0.03677099 0.03468995 0.033681 0.087894 0.085504 0.10146
τ i[s]: 5.2E-5 3.7E-4 3.7E-4 3.3E-3 0.021173 0.107752
1 fF | | fl tl 0.001 A
0 ee 5 10 15 20 25 30 ee 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]
Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal resistance
collector-emitter voltage ( D = t p/T)
( V GE =0V, f=250kHz)
C
c)th(j-
Z
**----- End of picture text -----**
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**----- Start of picture text -----**
350
1
> Woe Ty.
=x PEEeee Nesrtoe 300
aT ee ae D=0.5
| ae ey ci e l
r 0.2 .
250
5 O N |”
0.1
; Te )
0.05
ti~ 0.1 mmmyfANce)c
2 SeeSeareeaen a 0.02 a eo) 200 \
S A 0.01 a ja)
e ECT ae aa single pulse TT W \
maF Be aa Se HIMGtlI MOLI MIIil) 02 150 X
a ATML)
ulZz 0.01 eR ,Ne mR tL 8© 100
a CE core, Conteris il
AU TTT TT Pot ool 50
i: 1 2 3
ri[K/W]: 0.386101 0.480029 0.33387
τ i[s]: 3.6E-4 2.4E-3 0.01997
0.001 a i| 0 Py yy} yl
1E-6 1E-5 1E-4 0.001 0.01 0.1 1 25 50 75 100 125 150 175
t p ,PULSE WIDTH [s] T vj , JUNCTION TEMPERATURE [°C]
Figure 19. Diode transient thermal impedance as a Figure 20. Maximum pulse current as a function of
function of pulse width junction temperature
( D = t p/T)
I Fpuls
c)th(j-
Z
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10
Datasheet
2020-07-27
IKW75N65RH5
TM
**==> picture [474 x 303] intentionally omitted <==**
**----- Start of picture text -----**
120 LY 3.0
Tj=25°C IF=15A
= Tj=150°C | ‘ / IIFF=30A=60A
100 2.5
/ ee -
£ =. cae
=i 80 / oy uwx4 2.0
e / 5
as)S) 60 / oO> 1.5 _
:
=a a
O. 40 /Oo- 1.0 ————_— |
/
20 0.5
WA4
0 0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150 175
V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]
Figure 21. Typical diode forward current as a function Figure 22. Typical diode forward voltage as a function
I F V F
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11
Datasheet
2020-07-27
IKW75N65RH5
**==> picture [86 x 38] intentionally omitted <==**
## Hybrid�CoolSiC[TM] �IGBT
## **Package Drawing PG-TO247-3**
**==> picture [277 x 417] intentionally omitted <==**
**==> picture [153 x 351] intentionally omitted <==**
**==> picture [300 x 233] intentionally omitted <==**
**----- Start of picture text -----**
MILLIMETERS
DIMENSIONS
MIN. MAX.
A 4.70 5.30
A1 2.20 2.60
A2 1.50 2.50
b 1.00 1.40
b1 1.60 2.41 DOCUMENT NO.
b2 2.57 3.43 Z8B00003327
c 0.38 0.89 REVISION
D 20.70 21.50 06
D1 13.08 17.65
D2 0.51 1.35 SCALE 3:1
E 15.50 16.30 0 1 2 3 4 5mm
E1 12.38 14.15
E2 3.40 5.10
E3 1.00 2.60 EUROPEAN PROJECTION
e 5.44
L 19.80 20.40
L1 3.85 4.50
P 3.50 3.70
Q 5.35 6.25 ISSUE DATE
S 6.04 6.30 25.07.2018
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12
V�2.1 2020-07-27
Datasheet
IKW75N65RH5
**==> picture [86 x 38] intentionally omitted <==**
## Hybrid�CoolSiC[TM] �IGBT
## **Testing Conditions**
**==> picture [252 x 588] intentionally omitted <==**
**----- Start of picture text -----**
V GE (t)
90% V GE
10% V GE t
I C (t)
90% I C 90% I C
10% I C 10% I C
t
V CE (t)
t
t d(off) t f t d(on) t r
Figure A.
V GE (t)
90% V GE
10% V GE
t
I C (t)
2% I C t
V CE (t)
t 2 t 4
E off [=] V CE x I C x d t E on [=] V CE x I C x d t
t 1 t 3 2% V CE
t
t 1 t 2 t 3 t 4
Figure B.
**----- End of picture text -----**
**==> picture [153 x 99] intentionally omitted <==**
**----- Start of picture text -----**
I,V
dI F /dt Qt rrrr== Qt aa++ tQ b b
a b
Q a Q b
dI
**----- End of picture text -----**
Figure C. **Definition of diode switching characteristics**
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**
t
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**==> picture [169 x 63] intentionally omitted <==**
Figure D.
**==> picture [7 x 4] intentionally omitted <==**
**----- Start of picture text -----**
CC
**----- End of picture text -----**
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
13
V�2.1 2020-07-27
Datasheet
IKW75N65RH5
**==> picture [86 x 38] intentionally omitted <==**
## Hybrid�CoolSiC[TM] �IGBT
## **Revision�History**
IKW75N65RH5
## **Revision:�2020-07-27,�Rev.�2.1**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.1|2020-03-20|PreliminaryData Sheet|
|2.1|2020-07-27|Final Data Sheet|
14
V�2.1 2020-07-27
Datasheet
## **Trademarks**
## party.
## **Warnings**
## Links
- [View this product on Novapart](https://novapart.co/products/IKW75N65RH5XKSA1/igbt-650-v-80-a-395w-to-247-165-vsat)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ikw75n65rh5xksa1/igbt-650v-80a-395w-to-247/dp/3625317)
---
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