# IGBT, 650 V, 80 A, 274W, To-247, 1.35 Vsat

![Product image](https://novapart.co/image/farnell:3625318/)

**URL**: https://novapart.co/products/IKW50N65SS5XKSA1/igbt-650-v-80-a-274w-to-247-135-vsat
**SKU**: IKW50N65SS5XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €3.9800
**Stock**: 100+
**Lead Time**: 323 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 S5 CoolSiC Gen VI |
| Power Dissipation | 274W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.35V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3625318/)

## IKW50N65SS5 

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TM<br>**----- End of picture text -----**<br>


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TRENCHSTOP [TM] 5 S5 IGBT co-packed with full-rated 6 th generation<br>CoolSiC [TM] Schottky barrier diode<br>Features and Benefits: C<br>¢ Ultra-low switching losses due to the combination of<br>TRENCHSTOP 5 and CoolSiC technology<br>* Very low on-state losses<br>¢ Benchmark efficiency in hard switching topologies<br>G<br>¢ Plug-and-play replacement of pure silicon devices<br>E<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant<br>*« Complete product spectrum and PSpice models:<br>http://www.infineon.com/igbt/ —<br>Potential Applications: "i><br>¢ Industrial Power Supplies yr id<br>- Industrial SMPS<br>- Industrial UPS<br>* Energy Generation<br>- Solar String Inverter<br>* Energy Distribution 1<br>- Energy Storage 2<br>3<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW50N65SS5|650V|50A|1.35V|175°C|K50ESS5|PG-TO247-3|



Datasheet www.infineon.com 

2020-07-27 

IKW50N65SS5 

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## Hybrid�CoolSiC[TM] �IGBT 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 

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## Hybrid�CoolSiC[TM] �IGBT 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_C||80.0<br>60.5|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||200.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||200.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||57.5<br>38.5|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||150.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||274.0<br>137.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|



|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.55|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.00|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|



1) Pulse current level depends on Tvj of diode chip, see also Fig. "Maximum pulse current as a function of junction temperature" 

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## Hybrid�CoolSiC[TM] �IGBT 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=50.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.55<br>1.65|1.70<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.55<br>1.65|1.50<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>2000|1300<br>-|µA|
|Zero gate voltage collector current|_I_CES|_V_CE=480V,_V_GE=0V<br>_T_vj=25°C|-|-|40|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=50.0A|-|62.0|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=250kHz|-|2660|-|pF|
|Output capacitance|_C_oes||-|530|-||
|Reverse transfer capacitance|_C_res||-|10|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=50.0A,<br>_V_GE=15V|-|110.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|10|-|ns|
|Turn-off delaytime|_t_d(off)||-|140|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.32|-|mJ|
|Turn-off energy|_E_off||-|0.55|-|mJ|
|Total switchingenergy|_E_ts||-|0.87|-|mJ|



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## Hybrid�CoolSiC[TM] �IGBT 

|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|155|-|ns|
|Fall time|_t_f||-|25|-|ns|
|Turn-on energy|_E_on||-|0.14|-|mJ|
|Turn-off energy|_E_off||-|0.30|-|mJ|
|Total switchingenergy|_E_ts||-|0.44|-|mJ|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|11|-|ns|
|Turn-off delaytime|_t_d(off)||-|163|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.39|-|mJ|
|Turn-off energy|_E_off||-|0.90|-|mJ|
|Total switchingenergy|_E_ts||-|1.29|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|6|-|ns|
|Turn-off delaytime|_t_d(off)||-|191|-|ns|
|Fall time|_t_f||-|25|-|ns|
|Turn-on energy|_E_on||-|0.17|-|mJ|
|Turn-off energy|_E_off||-|0.50|-|mJ|
|Total switchingenergy|_E_ts||-|0.67|-|mJ|



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## TM Hybrid CoolSiC IGBT 

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300 90<br>80<br>250 >). ERE<br>70<br>200 60<br>ei Mo TACT<br>Xs FENCE<br>50<br>seen<br>150<br>40<br>PL 100 _ceenen 30<br> Ne EN<br>20<br>50<br>10<br>PN Gee<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C T C<br>Figure 1. Figure 2.<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ T vj ≤ 175°C)<br>200 200<br>175 175<br>VGE=20V VGE=20V<br>150 150<br>18V 18V<br>AL |eg.<br>15V 15V<br>125 125<br>12V 12V<br>100 10V 100 10V<br>eee 8V eR ees 8V ae<br>75 7V 75 7V<br>6V 6V<br>2Ure /AGenL ene 400<br>50 50<br>5V 5V<br>25 25<br>YR<br>| |ye<br>_FoO<br>0 | 0 L A<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>V CE V CE<br>Figure 3. Figure 4.<br>( T vj=25°C) ( T vj=150°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>


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200 Lt 2.50<br>Tj=25°C IC=25A<br>Tj=150°C IC=50A<br>175 |/— 2.25 IC=100A<br>z<br>Oo<br>150 ll 2.00<br>< / i ©<br>: i e<br>iW& 125 [Ii<x2 1.75<br>5/ i<br>. E<br>a 100 Ee 1.50<br>a 75 © 1.25<br>5° | ee<br>50 (e) 1.00<br>f | =e<br>25 0.75<br>0 0.50<br>2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>


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Figure 5. Typical<br>( V CE=20V)<br>**----- End of picture text -----**<br>


Figure 6. Typical a function ( _V_ GE=15V) 

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1000 aa 1000<br>1 | td(off) a ee ee ee t| td(off) a poel<br>I tf p o | tf ee<br>td(on) td(on)<br>tr tr<br>F | p FE |e eee eee<br>p o | | pa<br>ee<br>ra= 100 a eSee ee= 100 a e es e<br>ip) Ee ee es ee ip) a ss<br>uw a e s es<br>= a a a h<br>- PN = a eeee<br>Q poPON NPeg a eeee e ee eea ee ee<br>te FO | eon |<br>=<br>=<br>2)- 10 a es =2) 10 ae<br>a a - a es<br>po po<br>a Ce a a<br>ae a eeee<br>a ss a ee ee<br>a Po; | UT [TT]<br>1 1<br>0 25 50 75 100 125 150 0 10 20 30 40 50 60 70<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>t t<br>**----- End of picture text -----**<br>


Figure 7. 

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Datasheet<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, R G=9 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>


Figure 8. Typical **resistor** 

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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, I C =50A, Dynamic test<br>7 Figure E)<br>**----- End of picture text -----**<br>


2020-07-27 

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**----- Start of picture text -----**<br>
1000 aa 5.5<br>1 H td(off) a aa a I— typ. |<br>I tf a ee ee ee eee _<br>I td(on) a ee 5.0<br>tr<br><x<br>4.5<br>ip)— 100 pose (e)i 4.0 ee<br>im a a a<br>= a a eee | -~——~—_W<br>F a ee rd 3.5 —<br><= -<br>3.0<br>tert —x_<br>=<br>3<br>2)7 10 a == 2.5 ™<br>po Ww<br>eeSS<br>a eee 2.0 | ft ff<br>eseo)<br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 9. 

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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=15/0V,<br>I C =50A, R G=9 , Dynamic test circuit in<br>E)<br>**----- End of picture text -----**<br>


Figure 10. 

( _I_ C=0.50mA) 

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**----- Start of picture text -----**<br>
6 3.0<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>5 2.5<br>a a vo<br>ap)E ap)z a“<br>on on 4<br>(op) 4 y; io) 2.0 :<br>e) , @) “<br>—! 4 4 “<br>oO ¢ oO “<br>w / mw Psa<br>Wi 3 Wi 1.5<br>Lu ¢ Lu °<br>O ra O a<br>Zz ’ Zz<br>2 1.0<br>E Y 7 F a er<br>= ao o = Z<br>no 7 “7 ” 7<br>1 A a 0.5 7<br>Yo Zz rs-_— - - — 77<br>Lo<br>0 0.0<br>0 25 50 75 100 125 150 0 10 20 30 40 50 60 70<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, R G=9 Ω , Dynamic test circuit in V GE =15/0V, I C =50A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


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Datasheet<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
2.00<br>Eoff<br>Eon<br>1.75 Ets<br>><br>1.50<br>nm<br>7) Pra<br>op) “7<br>7 1.25 -<br>1.00<br>5<br>2 —<br>Zz 0.75 = —_|<br>=ebevTTs fo,<br>0.50<br>0.25<br>0.00<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
2.00<br>Eoff<br>Eon<br>1.75 Ets<br>><br>1.50<br>nm 247<br>7) 7<br>op) 2 o*<br>o 1.25 Pee<br>1.00<br>fi et —<br>2 < —<br>Zz 0.75 cae Le — |<br>=s eee[|a<br>0.50<br>0.25<br>0.00<br>175 200 250 300 350 400 450 500<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E<br>**----- End of picture text -----**<br>


Figure 13. 

Figure 14. 

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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=15/0V,<br>I C = 50A ; R G=9 , DDynamici test circuitircuit iin<br>Figure E)<br>**----- End of picture text -----**<br>


(inductive load, _T_ vj =150°C, _V_ GE=15/0V, _I_ C =50A ; _R_ G=9 , DDynamici test circuitircuit iin Figure E) 

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**----- Start of picture text -----**<br>
0.1<br>Tvj=175°C<br>x= po——————————— Tvj=150°C NT<br>B 0.01 BN<br>im fooSe Tvj=100°C NNUCe<br>~ po NNN<br>Tvj=25°C<br>CO5 0.001 LANAAe INNS en ee<br>EFx [[_SS77h =<br>1E-4<br>OouwO eeaee ae a a oo<br>e 1E-5 {foup—____|____|\i\\|\ | |7 wf7 |<br>O a ee ee Ae eee<br>> e—|C (<se\L CPP<br>\W 1E-6 4<br><x SSS eS oeE—=L——EE—EEE——e<br>i) po A<br>i 1E-7 Po<br>Zl es es ee ee<br>a ee<br>1E-8 ee ee<br>100 200 300 400 500 600 700<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I CES<br>**----- End of picture text -----**<br>


Figure 15. 

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16<br>130V<br>520V<br>= ‘<br>14<br>7<br>12<br>S<br>//<br>TO)< 10 /) /<br>8<br>i VA<br>E<br>5s<br>bu 6<br>x<br>ee)<br>. 4<br>2<br>0<br>0 20 40 60 80 100 120<br>Q GE , GATE CHARGE [nC]<br>GE<br>V<br>**----- End of picture text -----**<br>


Figure 16. Typical ( _I_ C=50A) 

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1E+4 J CCiesoes | PTTSseTT Sti Sti ett Sth nat<br>Cres<br>I| er a _ A BB a<br>aa ae ee s e s c e s mT 0.1 |||”I| D=0.5 HC t<br>1000 ~ 9x eeOeeget eee ioe sais’A SstTMoe away 0.2 Ceeen<br>0.1<br>— ———————————————— ee ie an<br>oe2 0 Od Aee7, 0.05<br>0.02<br>g ES2<br>2 [oe 0.01 HY 0.01 HLT<br>z 100 ee ee eee ES SS aa CL single pulse SL<br>i 0<br>SS f<br>a a a 2 BUG ARAN PAG A a<br>Poses uw tL<br>0.001 ay 20 Re mn<br>pT TV ee<br>10<br>J ||<br>———— a Te cat aie,<br>a a<br>a Yai i: TT 1 2 3 4 5<br>ri[K/W]: 0.030556 0.137971 0.162007 0.15972 0.059746<br>τ i[s]: 2.4E-5 3.1E-4 3.1E-3 0.024936 0.134448<br>1 fF | | fl tl 1E-4 A | *S& d<br>0 5 10 15 20 25 30 1E-8 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>


Figure 17. 

> Figure 18. IGBT ( _D_ = _t_ p/T) 

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1<br>S oon or on A<br>x ee<br>WwW ego gf D=0.5<br>9 eel 0.2 |<br>< Seem 0.1<br>¢ Ce UM UII<br>Ma 0.05<br>0.1 (Il Ul<br>Zz Co ee ee 0.02 CME<br>S ere | A Te 0.01 0 |<br>Y 2 i UT<br>Ww ST TO tN single pulse Hh<br>F Ey AAS A A<br>bi ruYrQU yi20<br>7) 0.01 aco M R<br>YT Ta AT —7 Th<br>E A |!<br>g Fae tt i}<br>- PTI TAI TA TT TT cist, Ce=reiRe Ill<br>CUT TAL AAT UT TTT<br>TTT AHA[yl | YM i: 1 CA 2 CU 3 CTA 4 1<br>ri[K/W]: 0.061974 0.145547 0.232966 0.559513<br>τ i[s]: 5.5E-5 6.3E-4 0.011391 0.389105<br>a [ TT<br>0.001<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10<br>t p , PULSE WIDTH [s]<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>


Figure 19. Diode function ( _D_ = _t_ p/T) 

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225<br>200<br>175<br>150<br>125<br>0<br>Q<br>wl<br>100<br>=<br>Ww<br>75<br>:<br>Q<br>50<br>25<br>0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>I Fpuls<br>**----- End of picture text -----**<br>


Figure 20. 

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TM 

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150 3.5<br>Tj=25°C IF=20A<br>Tj=150°C IF=40A<br>IF=80A<br>[= / 3.0 = |<br>120 P TT<br>tA A<br>2.5<br>< BRA = a<br>z / oO “7<br>uw“eta 90 PA/ 7 <xEFa 2.0 fe<br>es |i ffi ls<br>e Q<br>< =_<br>1.5<br><= 60 | fy =-<br>&2 7 &<br>| / 2 1.0 4<br>30<br>one 0.5 Py pp yd<br>0 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>


Figure 21. 

Figure 22. 

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IKW50N65SS5 

**==> picture [86 x 38] intentionally omitted <==**

## Hybrid�CoolSiC[TM] �IGBT 

## **Package Drawing PG-TO247-3** 

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MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A 4.70 5.30<br>A1 2.20 2.60<br>A2 1.50 2.50<br>b 1.00 1.40<br>b1 1.60 2.41 DOCUMENT NO.<br>b2 2.57 3.43 Z8B00003327<br>c 0.38 0.89 REVISION<br>D 20.70 21.50 06<br>D1 13.08 17.65<br>D2 0.51 1.35 SCALE 3:1<br>E 15.50 16.30 0 1 2 3 4 5mm<br>E1 12.38 14.15<br>E2 3.40 5.10<br>E3 1.00 2.60 EUROPEAN PROJECTION<br>e 5.44<br>L 19.80 20.40<br>L1 3.85 4.50<br>P 3.50 3.70<br>Q 5.35 6.25 ISSUE DATE<br>S 6.04 6.30 25.07.2018<br>**----- End of picture text -----**<br>


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## Hybrid�CoolSiC[TM] �IGBT 

## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


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t<br>**----- End of picture text -----**<br>


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Figure D. 

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CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

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## Hybrid�CoolSiC[TM] �IGBT 

## **Revision�History** 

IKW50N65SS5 

## **Revision:�2020-07-27,�Rev.�2.1** 

## Previous Revision 

|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.1|2020-03-20|PreliminaryData Sheet|
|2.1|2020-07-27|Final Data Sheet|



14 

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## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/IKW50N65SS5XKSA1/igbt-650-v-80-a-274w-to-247-135-vsat)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ikw50n65ss5xksa1/igbt-650v-80a-274w-to-247/dp/3625318)
---

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