# IGBT, 67 A, 1.6 V, 246 W, 600 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2781032/)

**URL**: https://novapart.co/products/IKW40N60DTPXKSA1/igbt-67-a-16-v-246-w-600-to-247-3-pins
**SKU**: IKW40N60DTPXKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.9800
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP |
| Power Dissipation | 246W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 67A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781032/)

## IGBT 

TRENCHSTOP[TM] erformance 

## IKW40N60DTP 

TRENCHSTOP[TM] P erformance 

## IKW40N60DTP 

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TRENCHSTOP [TM] P erformance<br>**----- End of picture text -----**<br>


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TRENCHSTOP [TM] P erformance series<br>Features: C<br>TRENCHSTOP [TM] technology offering<br>* very low V CEsat<br>+ low turn-off losses<br>¢ short tail current<br>G<br>* low EMI<br>E<br>* Very soft, fast recovery anti-parallel diode<br>* maximum junction temperature 175°C<br>* qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant<br>* complete product spectrum and PSpice Models: =<br>http://www.infineon.com/igbt/<br>Applications:<br>+* drivessolar inverters y 4<br>* uninterruptible power supplies<br>* converters with medium switching frequency<br>G<br>C<br>E<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW40N60DTP|600V|40A|1.6V|175°C|K40DDTP|PG-TO247-3|



2 

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## TRENCHSTOP[TM] �P erformance �Series 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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## TRENCHSTOP[TM] �P erformance �Series 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Parameter**|**Parameter**|**Symbol**|||**Value**|**Value**||**Unit**|**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|||_V_CE|||600|||V||
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|||_I_C|||67.0<br>48.0|||A||
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|||_I_Cpuls|||120.0|||A||
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs1)|||-|||120.0|||A||
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|||_I_F|||58.0<br>35.0|||A||
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|||_I_Fpuls|||120.0|||A||
|Gate-emitter voltage|||_V_GE|||±20|||V||
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|||_t_SC|||5|||µs||
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|||_P_tot|||246.0<br>123.0|||W||
|Operating junction temperature|||_T_vj||-40...+175||||°C||
|Storage temperature|||_T_stg||-55...+150||||°C||
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s||||||260|||°C||
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|||_M_|||0.6|||Nm||
|**ThermalResistance**|||||||||||
|**Parameter**|**Symbol **|**Conditions**|||||**Value**|||**Unit**|
||||||**min.**||**typ.**|**max.**|||
|**RthCharacteristics**|||||||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||||-||0.41|0.61||K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||||-||0.83|1.29||K/W|



1) Defined by design. Not subject to production test. 

Rev.�2.1,��2016-02-08 

4 

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## TRENCHSTOP[TM] �P erformance �Series 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=2.00mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.60<br>1.94|1.80<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.45<br>1.39|1.70<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.64mA,_V_CE=_V_GE|4.1|5.1|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|40.0|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1400|-|pF|
|Output capacitance|_C_oes||-|76|-||
|Reverse transfer capacitance|_C_res||-|48|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=40.0A,<br>_V_GE=15V|-|177.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|183|-|A|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.1Ω,_R_G(off)=10.1Ω,<br>_L_σ=32nH,_C_σ=60pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|30|-|ns|
|Turn-off delaytime|_t_d(off)||-|222|-|ns|
|Fall time|_t_f||-|18|-|ns|
|Turn-on energy|_E_on||-|1.06|-|mJ|
|Turn-off energy|_E_off||-|0.61|-|mJ|
|Total switchingenergy|_E_ts||-|1.67|-|mJ|



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## TRENCHSTOP[TM] �P erformance �Series 

|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1175A/µs|-|87|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.56|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|11.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|144|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.1Ω,_R_G(off)=10.1Ω,<br>_L_σ=32nH,_C_σ=60pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|30|-|ns|
|Turn-off delaytime|_t_d(off)||-|273|-|ns|
|Fall time|_t_f||-|47|-|ns|
|Turn-on energy|_E_on||-|1.63|-|mJ|
|Turn-off energy|_E_off||-|1.05|-|mJ|
|Total switchingenergy|_E_ts||-|2.68|-|mJ|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1175A/µs|-|144|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.52|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|18.3|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|142|-|A/µs|



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## TRENCHSTOP[TM] erformance 

## IKW40N60DTP Series 

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300<br>250<br>_<br>200 Ne} po<br>Z .<br><x<br>Oo \<br>| 150 \<br>ra) \<br>\<br>100<br>e)&& \<br>50 \ \<br>0<br>25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C]<br>tot<br>P<br>**----- End of picture text -----**<br>


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100<br>a<br>_ YT TT TAT TT Ta _<br>x  a tp=1µs<br>6B LUA Z<br>a <x<br>10<br>ee=) Pt tt tt tt Oo<br>Oad eteet te |<br>e) ed<br>BH |YT TT TT ra)<br>eg ae<br>SLU. 1 Pt| e)&&<br>a eeeee<br>ee<br>0.1<br>0.1 1 10 100 1000<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Forward bias safe operating area<br>( D =0, T C =25°C, T j 175°C; V GE=15V)<br>I C P tot<br>**----- End of picture text -----**<br>


> Figure 2. Power **temperature** ( _T_ j ≤ 175°C) 

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80 110<br>100<br>VGE=20V<br>90 15V<br>60<br>a 80 13V rae<br>11V<br>WW: RWWWW: 70 AVE<br>pO z WN<br>9V<br>60<br>g E 1] [AAA] 7V<br>40<br>50<br>—_<br>40<br>° ° ) (A<br>30<br>20 | a<r/\<br>20<br>10 PY \ \ | |<br>> aY Sa<br>0 0<br>e e<br>25 50 75 100 125 150 175 0 1 2 3 4<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>


Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ j ≤ 175°C) 

Figure 4. Typical ( _T_ j=25°C) 

7 

## IKW40N60DTP 

## TRENCHSTOP[TM] P erformance 

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**----- Start of picture text -----**<br>
110 100<br>Tj=25°C<br>100 Po Tj=175°C<br>A<br>VGE=20V<br>tf > a a<br>90 15V<br>/<br>75<br>80 13V<br>z WNLZ | ,<br>11V<br>70<br>9V a<br>a 60 WIE] § :<br>7V<br>50<br>a } a<br>50<br>OO<br>PT ORE<br>ag 40 \/WY7X —— _I<br>gS 30 |a|WS7| 8g 25 |<br>20<br>10<br>0 0<br>0 1 2 3 4 5 0 2 4 6 8 10<br>V CE COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>


Figure 5. Typical ( _T_ j=175°C) 

Figure 6. Typical ( _V_ CE=20V) 

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3.5<br>a a ee<br>IC=20A<br>IC=40A es<br>== IC=80A td(off) ee<br>tf<br>PS 3.0 T EP td(on) aa<br>tr<br>E a<br>100<br>: e eos ee =a_ __<br>> = Q a<br>Ep(t- seg a S a SeSScae<br>2.5<br>a =<br>Pee saraTeWw poeae ee eeee<br>a eo | | jut] ft |<br>WW = :<br>2.0<br>poOke de—_ _ EF 10 a “<br>Lu22a.45=_—— 2) —---—— a<br>a ee<br>rs) tea a eeee ee eee<br>1.5<br>| aSoe ee eee ee<br>1.0 1<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V)=15V) (ind. load, T j =175°C, V CE  =400V, V GE=15/0V,<br>t<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>


Figure 7. Typical a function ( _V_ GE=15V)=15V) 

_r_ G=10,1 

8 

IKW40N60DTP 

TRENCHSTOP[TM] P erformance 

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1000 a<br>= td(off) SSS CET<br>tf<br>I td(on) FERRERS| —— TT<br>Pom tr sCOCOteeer Eee feT e<br>td(off)<br>tf<br>e r td(on)<br>Eiht tr<br>100<br>ty yy 2<br>=9 100 ty= a e es eee<br>= @ p o<br>rs) Eeea aes OL<br>Pe frrrerrerrrrrrr<br>@ rrr) 2 |<br>6 PPresc eee} ef<br>| PSeL eer<br>Pt | | eee et etryToa)| 6 |,v7<br>Tere TELE EL <<br>10 10<br>0 5 10 15 20 25 30 35 40 45 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(ind. load, T j =175°C, V CE  =400V, V GE=15/0V, (ind. load, V CE =400V, V GE =15/0V, I C=40A,<br>I C =40A, test circuit in Fig. E) r G=10,1 , test circuit in Fig. E)<br>t t<br>**----- End of picture text -----**<br>


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6.0 8<br>typ. Eoff<br>min. Eon<br>max. 7 Ets<br>s PE | El li tL<br>5.0<br>= = /<br>6<br>4.0<br>5<br>Ir /<br>op) ~~ > / /<br>ia3 sto ~AmS ow3 yj<br>LT 3.0 i Ww 4<br>- ~~ Zz /<br>iad Lu 7 7<br>Lu ~ o) ra 7<br>E \ Zz 3 7<br>iuS 2.0 ~ ae / / 4 7<br>im = 2 va Z ~.<br>1.0<br>| 1 ep TT<br>Eee<br>0.0 0<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>of junction junction temperature function of collector current<br>( I C=0,64mA)=0,64mA) (ind. load, T j =175°C, V CE =400V, V GE=15/0V,<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 11. Gate-emitter of junction junction ( _I_ C=0,64mA)=0,64mA) 

_r_ G=10,1 

9 

TRENCHSTOP[TM] P erformance 

## IKW40N60DTP 

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**----- Start of picture text -----**<br>
6 3.0<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>5 EEE 2.5 a Le<br>£& E ea = _e—<br>Lu “ W ae<br>7)2o 4 TLL ery 7)7p) 2.0 > - ~<br>—S TTT etyY —g U- _<br>> 7 > a7<br>w _-<br>2 TLLLer<br>3 1.5<br>ow2 LL |er dye2 =<br>Goer<br>Zz — (o) a<br>O ti Ler ty é = --T7 aa<br>¢ 2 Zz 1.0 ao<br>CT _<br>|e 1 (Leeretl] §§ 0.5 ae—<br>0 0.0<br>0 5 10 15 20 25 30 35 40 45 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(ind. load, T j =175°C, V CE =400V, V GE=15/0V, (indload, V CE =400V, V GE =15/0V, I C=40A,<br>I C =40A, test circuit in Fig. E) r G=10,1 , test circuit in Fig. E)<br>6.0 16<br>Eoff 120V<br>Eon 480V<br>Ets 14<br>_Ss 5.0 /<br>£&o 4 >ow 12 / /<br>4.0<br>oD4aoF un | @<_ 10 / //<br>“<br>3.0 olf 8<br>Ww va —_ —<br>6<br>2.0<br>== - — ao | fe)- 4<br>aaa | +r<br>1.0<br>2<br>0.0 0<br>300 350 400 450 500 550 600 0 50 100 150 200<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical gate charge<br>function of collector emitter voltage ( I C=40A)<br>(ind. load, T j =175°C, V GE =15/0V, I C=40A,<br>E E<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>


_r_ G=10,1 

10 

IKW40N60DTP Series 

TRENCHSTOP[TM] erformance 

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**----- Start of picture text -----**<br>
350<br>aes PIT TTT TTT yyy<br>1000 eea ee e e =: 300 Titelett yy yeKL<br>ee eeoe e Cies e | 62 250 ee[itteeeeeeeZd e nee<br>Coes<br>Cres<br>e e<br>9 [ = 200 A<br>| ee Ae<br>150<br>R 100 s et<br>a O<br>100<br>50<br>pe] *<br>10 0<br>0 10 20 30 12 13 14 15 16 17 18 19 20<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical capacitance as a function of Figure 18. Typical short circuit collector current as a<br>collector-emitter voltage function of gate-emitter voltage<br>( V GE =0V, f=1MHz) ( V CE 400V, start at T j=25°C)<br>C<br>I C(SC)<br>**----- End of picture text -----**<br>


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16 pip ft tt | a EHC HTEa Free a a Ht |<br>Ne ee<br>ee 14<br>0.1<br>D=0.5<br>SPN Sl<br>12<br>= a EAH 0.2 |<br>0.1<br>S a Se eae Sea<br>< 10 PaaeNeEee ee iP ae 0.05<br>2 a LL YANN TT 0.02 1<br>e POPPE NEO. 0.01 eee il<br>= 8 | >PDDD NI] 2 GeezHeTete CT 0.01 lll<br>single pulse<br>5 rt | Ff f fot AGE x eal ee CCU<br>So TE cacy Aeeclees a eee eeea<br>6<br>a | | | | ft fF fo) NY TE Conn Coo<br>: ee 22 SAHAULTR N A EH T RA<br>4 0.001 LN IM amt<br>. ~<br>2 See eee eH a Cy=1;/R, C2=te/Re<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.01470005 0.07635961 0.09972334 0.1994667 0.0170487 1.3E-3<br>pe) C τ i[s]: 3.4E-5 1.9E-4 2.1E-3 S 0.01129602 0.08484332 1.853814<br>0 | | | | | | | | ft ft | 1E-4 ee |<br>10 11 12 13 14 15 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 19. Short circuit withstand time as a function of Figure 20. Typical IGBT transient thermal impedance<br>gate-emitter voltage ( D = t p/T)<br>( V CE 400V, start at T j 150°C)<br>t SC thJC<br>Z<br>**----- End of picture text -----**<br>


11 

TRENCHSTOP[TM] P erformance 

## IKW40N60DTP 

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**----- Start of picture text -----**<br>
250<br>1 Tj=25°C, IF = 20A<br>Tj=175°C, IF = 20A<br>> iy ~~<br>S eaH a e<br>4 so<br>D=0.5<br>200<br>0.2<br>ST z 0.1 ey (A a<br>ae A 0.1 \<br>jaS PTeeea AZtH 0.05 |Cn Co} = XN<br>= YM 0.02 EA or<br>epsn 0.01 150 :<br>0.01 single pulse<br>Iee ee Se tee SS et Cott mo _<br>EK =<br>Zz ee|)<br>7A a or<br>ae a a > Ty<br>100<br>© 0.001 See(Mett memetts emeEst 0 meme “||Ei 2. —~PL<br>- CC | Aet cer, CyateiRe|||HI<br>Aa<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.03891365 0.1843676 0.2443055 0.3230286 0.04259767 1.4E-3<br>τ i[s]: 2.9E-5 1.5E-4 1.3E-3 7.7E-3 0.05008655 1.821936<br>|<br>1E-4 50<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 600 700 800 900 1000 1100 1200 1300 1400<br>t p ,PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical diode transient thermal impedance Figure 22. Typical reverse recovery time as a function<br>as a function of pulse width of diode current slope<br>( D = t p/T) ( V R=400V)<br>2.0 30<br>Tj=25°C, IF = 20A Tj=25°C, IF = 20A<br>Tj=175°C, IF = 20A Tj=175°C, IF = 20A<br>25<br>Lu7 1.5 FO IL— Kke L E T TE<br>ae -_  |-- oc TTL<br><x or 20<br>a: =)ae Gee eeee<br>Wwiaé>Q: 1.0 Wwuwé>fe)S$ 15 FTLLerta  LL Le=  LTERTTEp<br>: we TELE be =<br>10<br>2 | eee rey<br>: TATE 2 BRREOD eae<br>0.5 |_| | | | + t+ aa LL Ltr<br>ci fee<br>5<br>: TATA TH = TELE<br>0.0 0<br>600 700 800 900 1000 1100 1200 1300 1400 600 700 800 900 1000 1100 1200 1300 1400<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>thJC<br>Z<br>Q rr I rr<br>**----- End of picture text -----**<br>


Figure 23. Typical function ( _V_ R=400V) 

Figure 24. 

( _V_ R=400V) 

12 

IKW40N60DTP 

## TRENCHSTOP[TM] P erformance 

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0 60<br>SS / }<br>Tj=25°C, IF = 20A Tj=25°C<br>Tj=175°C, IF = 20A Tj=175°C<br>— — | /<br>50 /;/<br>=a<br><, -50 q = [x]<br>40<br>6 ‘ N Pa<br>5 a<br>2 AN a)S)<br>-100 30<br>~<br>© <x<br>[ou2 X = / /<br>oO) ia //<br>20<br>x el P| | pl<br>ne}. NN .<br>-150<br>10<br>c<br>7<br>-200 0<br>600 700 800 900 1000 1100 1200 1300 1400 0.0 0.5 1.0 1.5 2.0 2.5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>


Figure 25. 

Figure 26. 

( _V_ R=400V) 

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2.0<br>IF=10A<br>IF=20A<br>IF=40A<br>1.8<br>Ww 1.6<br>Oo<br><x<br>Kk<br>_!<br>> Q 1.4 —<br>x<br><x<br>a<br>1.2<br>1.0<br>0.8<br>25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>


Figure 27. 

13 

IKW40N60DTP 

TRENCHSTOP[TM] �P erformance �Series 

**==> picture [146 x 65] intentionally omitted <==**

## **Package Drawing PG-TO247-3** 

14 

Rev.�2.1,��2016-02-08 

IKW40N60DTP 

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TRENCHSTOP[TM] �P erformance �Series 

## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>


Figure C. **Definition of diode switching characteristics** 

**==> picture [7 x 7] intentionally omitted <==**

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t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

15 

Rev.�2.1,��2016-02-08 

## IKW40N60DTP 

## TRENCHSTOP[TM] P erformance 

|Revision History|||
|---|---|---|
|IKW40N60DTP|||
|Revision: 2016-02-08,|Rev. 2.1||
|Previous Revision|||
|Revision<br>Date||Subjects(major changes since last revision)|
|2.1<br>-||Release final datasheet|



## party. 

## **Warnings** 

16 



## Links

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- [Supplier page](https://es.farnell.com/en-ES/infineon/ikw40n60dtpxksa1/igbt-single-600v-67a-to-247/dp/2781032)
---

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