# IGBT, 62 A, 1.35 V, 188 W, 650 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2710004/)

**URL**: https://novapart.co/products/IKW30N65ES5XKSA1/igbt-62-a-135-v-188-w-650-to-247-3-pins
**SKU**: IKW30N65ES5XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.6000
**Stock**: 10+
**Lead Time**: 260 days (indicative)

## Description

DC Collector Current:62A; Collector Emitter Saturation Voltage Vce(on):1.35V; Power Dissipation Pd:188W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP™ 5 |
| Power Dissipation | 188W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 62A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.35V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2710004/)

IGBT TRENCHSTOP[TM] 

IKW30N65ES5 650V TRENCHSTOP TM _ 5 high speed soft switching duopak 

## IKW30N65ES5 

## TRENCHSTOP[TM] 

## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
Features and Benefits: C<br>High speed S5 technology offering<br>* High speed smooth switching device for hard & soft switching<br>¢ Very Low V CEsat , 1.35V at nominal current<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>¢ 650V breakdown voltage<br>E<br>* Low gate charge Q G<br>¢ IGBT copacked with full rated RAPID 1 fast antiparallel diode<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant =<br>*« Complete product spectrum and PSpice Models: Gi,<br>http://www.infineon.com/igbt/<br>Applications:<br>« Resonant converters yf<br>¢ Uninterruptible power supplies<br>* Welding converters<br>* Mid to high range switching frequency converters<br>1<br>Package pin definition: 2<br>3<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW30N65ES5|650V|30A|1.35V|175°C|K30EES5|PG-TO247-3|



2 

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## TRENCHSTOP[TM] �5�soft�switching�IGBT 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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TRENCHSTOP[TM] �5�soft�switching�IGBT 

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## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||62.0<br>39.5|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_F||40.0<br>39.5|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||120.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||188.0<br>94.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|**ThermalResistance**|||||



|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.80|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||1.00|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|



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## TRENCHSTOP[TM] �5�soft�switching�IGBT 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.50<br>1.60|1.70<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.42<br>1.39|1.70<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.30mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1400|50<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|42.0|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1800|-|pF|
|Output capacitance|_C_oes||-|55|-||
|Reverse transfer capacitance|_C_res||-|7|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=30.0A,<br>_V_GE=15V|-|70.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=13.0Ω,_R_G(off)=13.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns|
|Rise time|_t_r||-|12|-|ns|
|Turn-off delaytime|_t_d(off)||-|124|-|ns|
|Fall time|_t_f||-|30|-|ns|
|Turn-on energy|_E_on||-|0.56|-|mJ|
|Turn-off energy|_E_off||-|0.32|-|mJ|
|Total switchingenergy|_E_ts||-|0.88|-|mJ|



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## TRENCHSTOP[TM] �5�soft�switching�IGBT 

|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=13.0Ω,_R_G(off)=13.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|16|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|6|-|ns|
|Turn-off delaytime|_t_d(off)||-|133|-|ns|
|Fall time|_t_f||-|33|-|ns|
|Turn-on energy|_E_on||-|0.26|-|mJ|
|Turn-off energy|_E_off||-|0.17|-|mJ|
|Total switchingenergy|_E_ts||-|0.43|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=30.0A,<br>_di_F_/dt_=1200A/µs|-|75|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.83|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|18.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-900|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=1900A/µs|-|52|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.60|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|18.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1315|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=13.0Ω,_R_G(off)=13.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns|
|Rise time|_t_r||-|13|-|ns|
|Turn-off delaytime|_t_d(off)||-|149|-|ns|
|Fall time|_t_f||-|55|-|ns|
|Turn-on energy|_E_on||-|0.77|-|mJ|
|Turn-off energy|_E_off||-|0.56|-|mJ|
|Total switchingenergy|_E_ts||-|1.33|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=13.0Ω,_R_G(off)=13.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|16|-|ns|
|Rise time|_t_r||-|7|-|ns|
|Turn-off delaytime|_t_d(off)||-|179|-|ns|
|Fall time|_t_f||-|54|-|ns|
|Turn-on energy|_E_on||-|0.41|-|mJ|
|Turn-off energy|_E_off||-|0.31|-|mJ|
|Total switchingenergy|_E_ts||-|0.72|-|mJ|



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IKW30N65ES5 

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## TRENCHSTOP[TM] �5�soft�switching�IGBT 

**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=30.0A,<br>_di_F_/dt_=1200A/µs|-|110|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.75|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|26.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1000|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=1900A/µs|-|78|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.25|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|26.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1200|-|A/µs|



Rev.�2.2,��2015-10-16 

7 

IKW30N65ES5 

## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
200<br>180<br>TTTTTT]<br>160<br>sf 140 XL,Say.<br>120<br>pe ><br>7 100 foON de<br>eee<br>80<br>PEKTs<br>PrP 60 NC Te<br>40<br>ee Ne<br>To<br>20<br>0 fe<br>25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case<br>temperature<br>( T vj ≤ 175°C)<br>90<br>VGE = 20V<br>80 18V<br>15V<br>70 a<br>12V Pl<br>60 10V<br>8V<br>50<br>7V<br>40 6V<br>5V<br>30<br>| yy<br>20<br>ee | Ge<br>10<br>aeeee)<br>-y\<br>0 | |<br>0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
70<br>60 [][1]11~<br>50 PX<br>te EX<br>40<br>| NK<br>SaaNee<br>Te 3020 |eee|TK<br>10<br>0<br>25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C]<br>Figure 2. Collector current as a function of case<br>temperature<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>90<br>VGE = 20V<br>80 18V<br>15V<br>70 | Sa<br>12V WZ<br>60 10V<br>8V<br>50<br>7V<br>40 6V<br>5V<br>30<br>| ge<br>20<br>2 ea<br>10<br>eee<br>0 | A<br>0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C<br>I C<br>**----- End of picture text -----**<br>


Figure 3. Typical ( _T_ vj=25°C) 

Figure 4. Typical ( _T_ vj=175°C) 

8 

IKW30N65ES5 

## TRENCHSTOP[TM] 

**==> picture [474 x 302] intentionally omitted <==**

**----- Start of picture text -----**<br>
90 3.0<br>Tvj = 25°C IC = 15A<br>Tvj = 150°C IC = 30A<br>80 IC = 60A<br>z 2.5<br>70 Oo<br>< ] alS bee ~eooe<br>5 60 P 2.0 <p<br>Ww ] / x - _—<br>oe wo Le--<br>a |! ow<br>a) 50 l nm<br>xv E 1.5 | _<br>sf° 40 fs@  b------ ;<br>|= 30 |5B 1.0 ft<br>O.f wi—!_<br>20<br>0.5<br>10<br>0 0.0<br>2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>


( _V_ GE=15V) 

**==> picture [471 x 276] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 a SS SS es 1000 a SSSSSs<br>|i1 ttd(off)f aEeeS eeee eeee ee |i1 ttd(off)f po ee eS ee<br>td(on) td(on)<br>tr tr<br>a ==<br>I a ee eee | a ee ee eee<br>p t | | | | PT orp | | hc] ct |<br>100 100<br>e it omer ees L o<br>uwn eeeee een (Ee) _-———<br>= poa a a|PE = p——e—a eta a<br>FO poofaegee ee eea ee ee ee ee e e<br>a ee<br>Sele = feea“<br>ep)- 10 aa ee ee ee ee ep)- 10 aa<br>[- > _—<br>po po<br>ed ee a ee ee<br>Oe Pot | | | |TT<br>1 1<br>0 10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60 70 80 90<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]<br>t t<br>**----- End of picture text -----**<br>


Figure 7. 

## Figure 8. Typical **resistance** 

(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _R_ Gon=13 Ω , _R_ Goff=13 Ω , test circuit in Figure E) 

(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _I_ C =30A, dynamic test Figure E) 

9 

~~5 soft switching IGBT~~ IKW30N65ES5 

## TRENCHSTOP[TM] 

**==> picture [474 x 276] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 aaa 6<br>t1 td(off) a aaa typ.<br>| tf min.<br>I td(on) po > max.<br>| tr aa eeee eeee eeee eeee 5<br>O wast<br>= > ae<br>2 100 — T 7—— a 4 Pope—_<br>= a a _I | ss<br>uw es ee I ~sy<br>= a ee ee eee 7p) “SY<br>F ee ee es ee ee Mu ><br>3<br>O a ee ee ee ee = —<br>—a ee ee ee e e Ee ——~L<br>E E ~~<br>ep)= 10 a es Ee= 2 ~~ ~<br>s a es Lu ~~<br>a a<br>a ee Ee<br>a ee ee 5<br>1<br>1 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 9. 

(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =30A, _R_ Gon=13 Ω , _R_ Goff=13 Ω , dynamic circuit in Figure E) 

Figure 10. Gate-emitter of junction ( _I_ C=0.3mA) 

**==> picture [471 x 332] intentionally omitted <==**

**----- Start of picture text -----**<br>
5.0 2.5<br>Eoff Eoff<br>4.5 EEonts / / EEonts<br>ELOY FLO<br>4.0 mT ttt/ / z 2.0<br>z ye F e et<br>(dp)& / = < ° 5<br>Ww 3.5 / (¢p) oe<br>(op) Ww<br>ep) 7 op) “7<br>ett / ep) -<br>3.0 —! 1.5<br>—! tT TA ye Ee [ber]] | |<br>a 2.5 J ya ra ; waa ao<br>PERE/ 7 Sane7 ae<br>2= 2.0 } 7 : yo |g2 1.0 _-<br>4=ee 1.5 “ Zz 77 Z| 4= a pT —<br>1.0 Pa ACs - 0.5 - —-—— [|<br>. ae ee e ee<br>7 Za<br>7<br>0.5<br>tert> < oma ttt} EtEy<br>ati}<br>0.0 0.0<br>i] t t LEEty<br>0 10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60 70 80 90<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistance<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =150/V, R Gon=13 Ω , R Goff=13 Ω , dynamic V GE =0/15V, I C =30A, dynamic test circuit in<br>test circuit in Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


10 

IKW30N65ES5 

## TRENCHSTOP[TM] 

**==> picture [233 x 276] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.00<br>Eoff<br>Eon<br>1.75 Ets<br>z<br>1.50<br>Ww _-<br>ep) ae<br>ap) a<br>pt TT<br>e) 1.25 <7<br>—! a<br>O Pa<br>ow UerT<br>Ww 1.00 a<br>Z --T7<br>0.75<br>x _——<br>a —_-—<br>R a —<br>0.50<br>0.25<br>0.00<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>E<br>**----- End of picture text -----**<br>


Figure 13. 

(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =30A, _R_ Gon=13 Ω , _R_ Goff=13 Ω , dynamic circuit in Figure E) 

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**----- Start of picture text -----**<br>
1.50<br>Eoff<br>Eon<br>Ets<br>1.25<br>z<br>Ww 2<br>ep)n 1.00 7 oF<br>ey<br>e) a<br>—! “7<br>Oo a<br>ow “7<br>Ww 0.75 Z|<br>Zz a 2<br>2 —<br>x 2 = “7<br>0.50<br>a 7 —<br>R ae<br>0.25 — r<br>0.00<br>200 250 300 350 400 450 500<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E<br>**----- End of picture text -----**<br>


Figure 14. 

(inductive load, _T_ vj =150°C, _V_ GE=0/15V, _I_ C =30A, _R_ Gon=13 Ω , _R_ Goff=13 Ω , dynamic circuit in Figure E) 

**==> picture [471 x 275] intentionally omitted <==**

**----- Start of picture text -----**<br>
16 1E+4<br>V —, CC e Cies ee e eee eee eet<br>—- V CC = 520V J 1 Coes a<br>14 Le ——— | Cres a ee e e e e<br>12 1000<br>Ww YA)/ a S ee ee<br>Q — {hh<br>< ue a a<br>a 10 = a<br>QO // WW (A<br>Lui 8 /; anE 100 eeee<br>bE /,/ Oo EE<br>Ss 7 x ee<br>iuWw 6 —-—4 =O aAa a es<br>° 4 10 | pl ||<br>a ee es<br>aa<br>2 a ee es es<br>0 1<br>0 10 20 30 40 50 60 70 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


Figure 15. Typical ( _I_ C=30A) 

Figure 16. 

( _V_ GE 

11 

~~5 soft switching IGBT~~ IKW30N65ES5 

TRENCHSTOP[TM] 

**==> picture [475 x 276] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 ooo<br>CCI ooo<br>a ITT a a ee<br>spb rH s 1 a<br>4©  TICTIICGAIIn 0 ESBS eet<br>o PTT alanSS UTMail EI 33 Ec e<br>< Zea<br>D = 0.5 D = 0.5<br>I Ue ee < EE aa Oy 1<br>SeeWha All 0.20.1 ulSAASPE IAA 0.20.1 allTTETT TET<br>5 Ti 0.05 1 Nea 7A 0.05<br>> 0.1 ys aa) = J i<br>or Pea 7 (all 0.02 cone i iy =o Ay 0.02<br>0.1<br>27 ESConnieaHTT 0.01 aw zal 0.01<br>¢ a single pulse oom et single pulse<br>aZ | AaAT A |g tn ETE PT ai 07 a<br>fe© SayWtCanim ReHt] || Z aNPT AZAAAI | fe Re“|||||<br>PORTE fia | U N<br>Yi [il] T t, st) I rar “t etl<br>i: 1 2 3 4 5 i: 1 2 3 4<br>ri[K/W]: 0.09435 0.21765 0.230894 0.140301 0.116804 ri[K/W]: 0.244822 0.287048 0.295435 0.172695<br>τ i[s]: 7.0E-5 5.7E-4 5.1E-3 0.021932 0.085861 τ i[s]: 1.3E-4 1.1E-3 8.9E-3 0.079619<br>0.01 0.01<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>


> Figure 17. IGBT ( _D_ = _t_ p/T) 

Figure 18. 

( _D_ = _t_ p/T) 

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**----- Start of picture text -----**<br>
200 2.00<br>Tvj = 25°C, IF = 30A Tvj = 25°C, IF = 30A<br>Tvj = 150°C, IF = 30A Tvj = 150°C, IF = 30A<br>Eo<br>175 1.75<br>| Ee<br>oy 2<br>150 1.50<br>5Lu 4<br>ie. 125 N Ss)nd 1.25<br>oO 100 ~ > 1.00<br>75 0.75<br>2 —_——~ if Se ee eee<br>SY 9)<br>Lu ><br>ow 50 ff, 0.50<br>25 0.25<br>0 0.00<br>600 800 1000 1200 1400 1600 1800 2000 600 800 1000 1200 1400 1600 1800 2000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>


Figure 19. Typical of diode ( _V_ R=400V) 

Figure 20. 

( _V_ R=400V) 

12 

IKW30N65ES5 

## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
40 0<br>Tvj = 25°C, IF = 30A Tvj = 25°C, IF = 30A<br>Tvj = 150°C, IF = 30A Tvj = 150°C, IF = 30A<br>-200<br>35 TSST | yn<br>-400<br>30<br>-600<br>=) 25 Pa <x \<br>O LL \<br>-800<br>ra, UU _ rs} NIX<br>en 20 LL s -1000 ~N\<br>15<br>;7 7a BLa Na<br>th uw -1200 \<br>10<br>owa Qra) -1400 \<br>5<br>-1600<br>0 -1800<br>600 800 1000 1200 1400 1600 1800 2000 600 800 1000 1200 1400 1600 1800 2000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>


Figure 21. 

Figure 22. 

( _V_ R=400V) 

( _V_ R=400V) 

**==> picture [489 x 276] intentionally omitted <==**

**----- Start of picture text -----**<br>
90 l 2.50<br>Tvj = 25°C IF = 15A<br>= Tvj = 150°C / IF = 30A<br>80 I 2.25 = IF = 60A<br>70<br>2.00<br>= 60 uw<br>Zzim: Oo7<x 1.75 pap pe<br>50<br>3><br>a Qwz 1.50<br>< 40 | <<br>1.25<br>30<br>1.00<br>20<br>0.75<br>10<br>0 0.50<br>lw TT | ] LiL<br>0.0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>


Figure 23. 

Figure 24. 

13 

IKW30N65ES5 

TRENCHSTOP[TM] �5�soft�switching�IGBT 

**==> picture [146 x 65] intentionally omitted <==**

## **Package Drawing PG-TO247-3** 

14 

Rev.�2.2,��2015-10-16 

IKW30N65ES5 

TRENCHSTOP[TM] �5�soft�switching�IGBT 

**==> picture [146 x 65] intentionally omitted <==**

## **Testing Conditions** 

**==> picture [252 x 588] intentionally omitted <==**

**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


**==> picture [153 x 99] intentionally omitted <==**

**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>


Figure C. **Definition of diode switching characteristics** 

**==> picture [7 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


**==> picture [169 x 63] intentionally omitted <==**

Figure D. 

**==> picture [7 x 4] intentionally omitted <==**

**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

15 

Rev.�2.2,��2015-10-16 

IKW30N65ES5 

## TRENCHSTOP[TM] 

## IKW30N65ES5 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2015-08-12|Preliminarydata sheet|
|2.1|2015-09-22|Final data sheet|
|2.2|2015-10-16|Minor change Ic(VCE)Fig. 3 and Fig. 4|



## party. 

## **Warnings** 

16 



## Links

- [View this product on Novapart](https://novapart.co/products/IKW30N65ES5XKSA1/igbt-62-a-135-v-188-w-650-to-247-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ikw30n65es5xksa1/igbt-single-650v-62a-to-247/dp/2710004)
---

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