# IGBT, 30 A, 1.7 V, 235 W, 1.2 kV, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2776811/)

**URL**: https://novapart.co/products/IKW15N120T2FKSA1/igbt-30-a-17-v-235-w-12-kv-to-247-3-pins
**SKU**: IKW15N120T2FKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.8400
**Stock**: 200+
**Lead Time**: 190 days (indicative)

## Description

DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:235W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TrenchStop® 2 |
| Power Dissipation | 235W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 30A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 1.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2776811/)

IKW15N120T2 

**TrenchStop[®]** 2[nd] generation Series 

## Cinfineon 

Low Loss DuoPack : IGBT in 2[nd] generation **TrenchStop[®]** technology with soft, fast recovery anti-parallel Emitter Controlled Diode 

- Short circuit withstand time – 10s 

- Designed for : 

   - Frequency Converters 

   - Uninterrupted Power Supply 

- **TrenchStop[®]** 2[nd] generation for 1200 V applications offers : 

   - very tight parameter distribution 

   - high ruggedness, temperature stable behavior 

- Easy paralleling capability due to positive temperature coefficient in VCE(sat) 

C G E g PG-TO-247-3 

- Low EMI 

- Low Gate Charge 

- Very soft, fast recovery anti-parallel Emitter Controlled HE Diode 

- Qualified according to JEDEC[1] for target applications 

- Pb-free lead plating; RoHS compliant 

- Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ 

|**Maximum Ratings**||||
|---|---|---|---|
|**Parameter**|**Symbol**<br>~~-—}--——~~|**Value**<br>~~-—}--——~~|**Unit**|
|Collector-emitter voltage|_V_C E<br>~~-—}--——~~|1200<br>~~-—}--——~~|V|
|DC collector current (Tj = 150°C)<br>_T_C= 25C<br>_T_C= 110C|_I_C<br>~~-—}--——~~<br>~~pf~~|30<br>15<br>~~-—}--——~~<br>~~pf~~|A|
|Pulsed collector current,_t_plimited by _T_jmax|_I_Cpul s<br>~~pf~~|60<br>~~pf~~||
|Turn off safe operating area<br>_V_CE1200V,_T_j 175C|_-_<br>~~ft~~|60<br>~~ft~~||
|Diode forward current (Tj = 150°C)<br>_T_C= 25C<br>_T_C= 110C|_I_F<br>~~ft~~<br>~~pf~~|25<br>15<br>~~ft~~<br>~~pf~~||
|Diodepulsed current,_t_plimited by _T_jmax|_I_Fpul s<br>~~pf~~<br>~~ee~~|60<br>~~pf~~<br>~~eee~~||
|Gate-emitter voltage|_V_G E<br>~~ee~~|20<br>~~eee~~|V|
|Short circuit withstand time2) <br>_V_GE= 15V,_V_CC600V,_T_j, start 175C<br>~~;-—_|~~|_t_SC<br>~~ee ~~<br>~~ft~~<br>~~;-—_|~~|10<br> ~~eee~~<br>~~ft~~<br>~~;-—_| —__~~|s|
|Power dissipation<br>_T_C= 25C<br>~~;-—_|~~|_P_t ot<br>~~ft~~<br>~~;-—_|~~|235<br>~~ft~~<br>~~;-—_| —__~~|W|
|Operating junction temperature<br>~~;-—_|~~|_T_ j <br>~~;-—_|~~<br>~~ee~~|-40...+175<br>~~;-—_| —__~~<br>~~ee~~|C<br>~~ee~~|
|Storage temperature<br>~~;-—_|~~|_T_stg<br>~~;-—_|~~<br>~~ee~~|-55...+150<br>~~;-—_| —__~~<br>~~ee~~||
|Soldering temperature, 1.6mm (0.063 in.) from case for 10s<br>Wavesolderingonly, temperature on leads only|-<br>~~ee ~~<br>~~fT~~|260<br> ~~ee~~<br>~~fT~~||



- 1 J-STD-020 and JESD-022 

- 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 

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**TrenchStop[®]** 2[nd] generation Series 

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## **Thermal Resistance** 

|**Thermal Resistance**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Max. Value**|**Unit**|
|**Characteristic**|||||
|IGBT thermal resistance,<br>junction – case|_R_t hJC||0.63|K/W|
|Diode thermal resistance,<br>junction – case|_R_t hJC D||1.12||
|Thermal resistance,<br>junction – ambient|_R_t hJA||40||



## **Electrical Characteristic,** at _T_ j = 25 C, unless otherwise specified 

|**Electrical Characteristic,**at_T_j= 25|C, unless ot|herwise specified|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ. **|**max.**||
|**Static Characteristic**|||||||
|Collector-emitter breakdown voltage|_V_( BR )C ES|_V_G E=0V,_I_C=500µA|1200|-|-|V|
|Collector-emitter saturation voltage|_V_C E( sat )|_V_G E= 15V,_I_C=15A<br>_T_j=25C<br>_T_j=150C<br>_T_ j=175C|-<br>-<br>-|1.7<br>2.1<br>2.2|2.2<br>-<br>-||
|Diode forward voltage|_V_F|_V_G E=0V,_I_F=15A<br>_T_j=25C<br>_T_j=150C<br>_T_j=175C|-<br>-<br>-|1.75<br>1.8<br>1.75|2.2<br>-<br>-||
|Gate-emitter threshold voltage|_V_G E( t h)|_I_C=0.6mA,_V_C E=_V_G E|5.2|5.8|6.4||
|Zero gate voltage collector current|_I_CE S|_V_C E=1200V,<br>_V_G E=0V<br>_T_j=25C<br>_T_j=150C<br>_T_j=175C|-<br>-<br>-|-<br>-<br>-|0.4<br>4.0<br>20|mA|
|Gate-emitter leakage current|_I_GE S|_V_C E=0V,_V_G E=20V|-|-|600|nA|
|Transconductance|_g_fs|_V_C E=20V,_I_C=15A|-|8|-|S|



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## **Dynamic Characteristic** 

|**Dynamic Characteristic**|||||||
|---|---|---|---|---|---|---|
|Input capacitance|_C_i ss|_V_C E=25V,<br>_V_G E=0V,<br>_f_=1MHz|-|1000|-|pF|
|Output capacitance|_C_os s||-|100|-||
|Reverse transfer capacitance|_C_rs s||-|56|-||
|Gate charge|_Q_Gat e|_V_C C=960V,_I_C=15A<br>_V_G E=15V|-|93|-|nC|
|Internal emitter inductance<br>measured 5mm(0.197 in.)from case|_L_E||-|13|-|nH|
|Short circuit collector current1)|_I_C( SC )|_V_G E=15V,_t_SC10s<br>_V_C C= 600V,<br>_T_j ,sta rt=  25C<br>_T_j ,sta rt=  175C|-|82<br>60|-|A|



## **Switching Characteristic, Inductive Load,** at _T_ j=25 C 

|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBT Characteristic**|||||||
|Turn-on delaytime|_t_d( o n)|_T_j=25C,<br>_V_C C=600V,_I_C=15A,<br>_V_G E=0/15V,<br>_R_G=41.8,<br>_L_<br>_2 )_=126nH,<br>_C_<br>_2)_=34pF<br>Energy losses include<br>“tail” and diode<br>reverse recovery.|-|32|-|ns|
|Rise time|_t_r||-|25|-||
|Turn-off delaytime|_t_d( of f)||-|362|-||
|Fall time|_t_f||-|95|-||
|Turn-on energy|_E_o n||-|1.25|-|mJ|
|Turn-off energy|_E_o ff||-|0.8|-||
|Total switchingenergy|_E_t s||-|2.05|-||
|**Anti-Parallel Diode Characteristic**|||||||
|Diode reverse recoverytime|_t_rr|_T_j=25C,<br>_V_R=600V,_I_F=15A,<br>_di_F_/dt_=450A/s|-|300|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.3||µC|
|Diodepeak reverse recoverycurrent|_I_rr m||-|10||A|
|Diode peak rate of fall of reverse<br>recovery current during_t_b|_di_rr_/dt_||-|215|-|A/s|



> 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 

> 2) Leakage inductance _L_  and Stray capacity _C_  due to dynamic test circuit in Figure E. 

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## **Switching Characteristic, Inductive Load,** at _T_ j=175 C 

|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBT Characteristic**|||||||
|Turn-on delaytime|_t_d( o n)|_T_j=175C<br>_V_C C=600V,_I_C=15A,<br>_V_G E=0/15V,<br>_R_G= 41.8_,_<br>_L_<br>_1 )_=315nH,<br>_C_<br>_1)_=34pF<br>Energy losses include<br>“tail” and diode<br>reverse recovery.|-|31|-|ns|
|Rise time|_t_r||-|30|-||
|Turn-off delaytime|_t_d( of f)||-|450|-||
|Fall time|_t_f||-|176|-||
|Turn-on energy|_E_o n||-|1.5|-|mJ|
|Turn-off energy|_E_o ff||-|1.3|-||
|Total switchingenergy|_E_t s||-|2.8|-||
|**Anti-Parallel Diode Characteristic**|||||||
|Diode reverse recoverytime|_t_rr|_T_j=175C<br>_V_R=600V,_I_F=15A,<br>_di_F_/dt_=460A/s|-|460|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|2.65|-|µC|
|Diodepeak reverse recoverycurrent|_I_rr m||-|13|-|A|
|Diode peak rate of fall of reverse<br>recovery current during_t_b|_di_rr_/dt_||-|123||A/s|



> 1) Leakage inductance _L_  and Stray capacity _C_  due to dynamic test circuit in Figure E. 

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## IKW15N120T2 

## **TrenchStop[®]** 2[nd] generation Series 

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**----- Start of picture text -----**<br>
60A<br>40A<br>T C=80°C<br>T C=110°C<br>20A Ic<br>Ic<br>0A<br>10Hz 100Hz 1kHz 10kHz 100kHz<br>f , SWITCHING FREQUENCY<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>


**Figure 1. Collector current as a function of switching frequency** ( _T_ j  175C, _D =_ 0.5, _V_ CE = 600V, _V_ GE = 0/+15V, _R_ G = 41.8) 

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**----- Start of picture text -----**<br>
t p=3µs<br>10A 10µs<br>50µs<br>150µs<br>1A<br>500µs<br>20ms<br>DC<br>0.1A<br>1V 10V 100V 1000V<br>V CE, COLLECTOR-EMITTER VOLTAGE<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>


**Figure 2. Safe operating area** ( _D =_ 0, _T_ C = 25C, _T_ j 175C; _V_ GE=15V) 

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**----- Start of picture text -----**<br>
200W<br>150W<br>100W<br>50W<br>0W<br>25°C 50°C 75°C 100°C 125°C 150°C<br>T C, CASE TEMPERATURE<br>POWER DISSIPATION<br>tot,<br>P<br>**----- End of picture text -----**<br>


**Figure 3. Maximum power dissipation as a function of case temperature** ( _T_ j  175C) 

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**----- Start of picture text -----**<br>
30A<br>20A<br>10A<br>0A<br>25°C 75°C 125°C<br>T C, CASE TEMPERATURE<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>


**Figure 4. Maximum DC Collector current as a function of case temperature** ( _V_ GE  15V, _T_ j  175C) 

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## IKW15N120T2 

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**----- Start of picture text -----**<br>
60A 60A<br>50A 20V 50A 20V<br>V GE=17V V GE=17V<br>40A 15V 40A 15V<br>13V 13V<br>11V 11V<br>30A 30A<br>9V 9V<br>7V 7V<br>20A 20A<br>10A 10A<br>0A 0A<br>0V 1V 2V 3V 4V 0V 1V 2V 3V 4V<br>COLLECTOR CURRENT COLLECTOR CURRENT<br>,  ,<br>I C I C<br>**----- End of picture text -----**<br>


_V_ CE, COLLECTOR-EMITTER VOLTAGE **Figure 5. Typical output characteristic** ( _T_ j = 25°C) 

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**----- Start of picture text -----**<br>
V CE, COLLECTOR-EMITTER VOLTAGE<br>**----- End of picture text -----**<br>


**Figure 6. Typical output characteristic** ( _T_ j = 175°C) 

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**----- Start of picture text -----**<br>
60A<br>50A 3.0V I C =30A<br>2.5V<br>40A<br>2.0V<br>30A IC =15A<br>1.5V<br>20A IC =7.5A<br>1.0V<br>10A T J =175°C 0.5V IC =2A<br>25°C<br>0A<br>0.0V<br>0V 2V 4V 6V 8V 10V 12V<br>0°C 50°C 100°C 150°C<br>V GE, GATE-EMITTER VOLTAGE T J, JUNCTION TEMPERATURE<br>EMITT SATURATION VOLTAGE<br>-<br>COLLECTOR CURRENT<br>,<br>I C<br>COLLECTOR<br>CE(sat),<br>V<br>**----- End of picture text -----**<br>


**Figure 7. Typical transfer characteristic** (VCE=20V) 

**Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature** ( _V_ GE = 15V) 

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**----- Start of picture text -----**<br>
t<br>d(off)<br>t f<br>100ns<br>t<br>d(on)<br>10ns<br>t r<br>7.5A 15.0A 22.5A<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IC , COLLECTOR CURRENT<br>**----- End of picture text -----**<br>


**Figure 9. Typical switching times as a function of collector current** (inductive load, _T_ J=175°C, _V_ CE=600V, VGE=0/15V, _R_ G=41.8Ω, Dynamic test circuit in Figure E) 

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**----- Start of picture text -----**<br>
t d(off)<br>100ns<br>t f<br>t<br>d(on)<br>t r<br>10ns<br>0°C 50°C 100°C 150°C<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
T J, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br>


**Figure 11. Typical switching times as a function of junction temperature** (inductive load, _V_ CE=600V, VGE=0/15V, _I_ C=15A, _R_ G=41.8Ω, Dynamic test circuit in Figure E) 

## IKW15N120T2 

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**----- Start of picture text -----**<br>
1000 ns<br>t<br>d(off)<br>t f<br>100 ns<br>t<br>d(on)<br>10 ns t r<br>     <br>R G, GATE RESISTOR<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br>


**Figure 10. Typical switching times as a function of gate resistor** (inductive load, _T_ J=175°C, _V_ CE=600V, VGE=0/15V, _I_ C=15A, Dynamic test circuit in Figure E) 

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**----- Start of picture text -----**<br>
6.5V<br>6.0V<br>5.5V<br>5.0V max.<br>4.5V<br>4.0V typ.<br>3.5V<br>min.<br>0°C 50°C 100°C 150°C<br>EMITT TRSHOLD VOLTAGE<br>-<br>GATE<br>GE(th ) ,<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
T J, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br>


**Figure 12. Gate-emitter threshold voltage as a function of junction temperature** ( _I_ C = 600µA) 

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## IKW15N120T2 

## **TrenchStop[®]** 2[nd] generation Series 

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**----- Start of picture text -----**<br>
7.5mJ *)  E on  and  E ts include losses<br>   due to diode recovery<br>E ts *<br>5.0mJ<br>E on*<br>2.5mJ E off<br>0.0mJ<br>7.5A 15.0A 22.5A<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br>


## _IC_ , COLLECTOR CURRENT 

**Figure 13. Typical switching energy losses as a function of collector current** (inductive load, _T_ J=175°C, _V_ CE=600V, VGE=0/15V, _R_ G=41.8Ω, Dynamic test circuit in Figure E) 

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**----- Start of picture text -----**<br>
*)  E on  and  E ts  include losses<br>   due to diode recovery<br>5.00 mJ<br>E ts *<br>3.75 mJ<br>2.50 mJ E on*<br>1.25 mJ E off<br>0.00 mJ<br>     <br>R G, GATE RESISTOR<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br>


**Figure 14. Typical switching energy losses as a function of gate resistor** (inductive load, _T_ J=175°C, _V_ CE=600V, VGE=0/15V, _I_ C=15A, Dynamic test circuit in Figure E) 

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**----- Start of picture text -----**<br>
*)  E on and  E ts include losses<br>    due to diode recovery<br>E ts*<br>2.4mJ<br>E on *<br>1.2mJ<br>E off<br>0.0mJ<br>0°C 50°C 100°C 150°C<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
*)  E on and  E ts include losses<br>    due to diode recovery<br>5.00mJ E ts *<br>3.75mJ E on *<br>2.50mJ<br>E off<br>1.25mJ<br>0.00mJ<br>400V 500V 600V 700V<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br>


## _T_ J, JUNCTION TEMPERATURE 

## **Figure 15. Typical switching energy losses as a function of junction temperature** (inductive load, _V_ CE=600V, VGE=0/15V, _I_ C=15A, _R_ G=41.8Ω, Dynamic test circuit in Figure E) 

_VCE_ , COLLECTOR-EMITTER VOLTAGE 

## **Figure 16. Typical switching energy losses as a function of collector emitter voltage** 

- (inductive load, _T_ J=175°C, VGE=0/15V, _I_ C=15A, _R_ G=41.8Ω, Dynamic test circuit in Figure E) 

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**----- Start of picture text -----**<br>
15V<br>240V<br>960V<br>10V<br>5V<br>0V<br>0nC 25nC 50nC 75nC<br>Q GE, GATE CHARGE<br>EMITTER VOLTAGE<br>-<br>GATE<br>,<br>GE<br>V<br>**----- End of picture text -----**<br>


**Figure 17. Typical gate charge** ( _I_ C=15 A) 

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**----- Start of picture text -----**<br>
15µs<br>10µs<br>5µs<br>0µs<br>12V 14V 16V 18V<br>V GE, GATE-EMITTETR VOLTAGE<br>SHORT CIRCUIT WITHSTAND TIME<br>t SC,<br>**----- End of picture text -----**<br>


**Figure 19. Short circuit withstand time as a function of gate-emitter voltage** ( _V_ CE=600V _,_ start at _T_ J175°C _)_ 

## IKW15N120T2 

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**----- Start of picture text -----**<br>
1nF C iss<br>100pF C oss<br>C rss<br>10pF<br>0V 10V 20V<br>CAPACITANCE<br>c,<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V CE, COLLECTOR-EMITTER VOLTAGE<br>**----- End of picture text -----**<br>


**Figure 18. Typical capacitance as a function of collector-emitter voltage** ( _V_ GE=0V, _f_ = 1 MHz) 

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**----- Start of picture text -----**<br>
100A<br>75A<br>50A<br>25A<br>0A<br>12V 14V 16V 18V<br>V GE, GATE-EMITTETR VOLTAGE<br>COLLECTOR CURRENT<br>, short circuit<br>I C(sc)<br>**----- End of picture text -----**<br>


**Figure 20. Typical short circuit collector current as a function of gateemitter voltage** 

( _V_ CE  600V, _T_ j,start =175C) 

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## IKW15N120T2 

## **TrenchStop[®]** 2[nd] generation Series 

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**----- Start of picture text -----**<br>
25A<br>V<br>CE<br>600V<br>20A<br>15A 400V<br>10A<br>200V<br>5A<br>I<br>C<br>0A 0V<br>0us 0.4us 0.8us 1.2us<br>t , TIME<br>EMITTER VOLTAGE<br>-<br>COLLECTOR<br>,<br>CE<br>V<br>**----- End of picture text -----**<br>


**Figure 21. Typical turn on behavior** (VGE=0/15V, _R_ G=41.8Ω, _T_ j = 175C, Dynamic test circuit in Figure E) 

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**----- Start of picture text -----**<br>
15A 600V<br>I<br>C<br>10A 400V<br>5A 200V<br>V<br>CE<br>0A 0V<br>0us 0.4us 0.8us 1.2us<br>t , TIME<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>


**Figure 22. Typical turn off behavior** (VGE=15/0V, _R_ G=41.8Ω, _T_ j = 175C, Dynamic test circuit in Figure E) 

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**----- Start of picture text -----**<br>
100K/W<br>100K/W<br>D =0.5<br>D =0.5<br>R , ( K / W )  , ( s )<br>0.2 0.291  2.75*10 [-4]<br>0.2 0.434  2.60*10 [-3 ]<br>10-1K/W 0.1 0 R .14  , ( K / W ) 3 3.  06 ,   *1 ( s ) 0 [-4] 0.363 1.48 * 10 [-2]<br>0.217  3.47*10 [-3 ] 0.1 0.028 1.78*10 [-1]<br>0.05 0.258  1.71*10 [-2] 10-1K/W<br>0.017  2.63*10 [-1] 0.05 R 1 R 2<br>0.02<br>0.01 R 1 R 2 0.02<br>10-2K/W single puls e 0.01 C 1 = 1 / R 1 C 2 = 2 / R 2<br>C 1=1/ R 1 C 2=2/ R 2 single pulse<br>10-2K/W<br>10µs 100µs 1ms 10ms 100ms 10µs 100µs 1ms 10ms 100ms<br>t P, PULSE WIDTH t P, PULSE WIDTH<br>TRANSIENT THERMAL RESISTANCE TRANSIENT THERMAL RESISTANCE<br>,  ,<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br>


**Figure 23. IGBT transient thermal resistance** ( _D = t_ p / _T_ ) 

**Figure 24. Diode transient thermal impedance as a function of pulse width** ( _D_ = _t_ P/ _T_ ) 

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## IKW15N120T2 

## **TrenchStop[®]** 2[nd] generation Series 

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**----- Start of picture text -----**<br>
600ns<br>T =175°C<br>3µC J<br>500ns<br>400ns<br>2µC<br>300ns<br>T =175°C<br>J<br>200ns T =25°C<br>1µC J<br>T =25°C<br>100ns J<br>0ns 0µC<br>400A/µs 800A/µs 1200A/µs 400A/µs 800A/µs 1200A/µs<br>di F /dt , DIODE CURRENT SLOPE di F /dt , DIODE CURRENT SLOPE<br>REVERSE RECOVERY TIME<br>,  REVERSE RECOVERY CHARGE<br>t rr rr,<br>Q<br>**----- End of picture text -----**<br>


**Figure 23. Typical reverse recovery time as a function of diode current slope** ( _V_ R=600V, _I_ F=15A, Dynamic test circuit in Figure E) 

**Figure 24. Typical reverse recovery charge as a function of diode current slope** ( _V_ R=600V, _I_ F=15A, Dynamic test circuit in Figure E) 

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**----- Start of picture text -----**<br>
T =175°C<br>J<br>20A<br>15A<br>T =25°C<br>J<br>10A<br>5A<br>0A<br>400A/µs 800A/µs 1200A/µs<br>di F /dt , DIODE CURRENT SLOPE<br>REVERSE RECOVERY CURRENT<br>I rr,<br>**----- End of picture text -----**<br>


**Figure 25. Typical reverse recovery current as a function of diode current slope** ( _V_ R=600V, _I_ F=15A, Dynamic test circuit in Figure E) 

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**----- Start of picture text -----**<br>
T =25°C<br>-600A/µs J<br>-500A/µs<br>-400A/µs<br>T =175°C<br>J<br>-300A/µs<br>-200A/µs<br>-100A/µs<br>-0A/µs<br>400A/µs 800A/µs 1200A/µs<br>di F /dt , DIODE CURRENT SLOPE<br>DIODE PEAK RATE OF FALL<br>,<br>/dt<br>rr<br>di OF REVERSE RECOVERY CURRENT<br>**----- End of picture text -----**<br>


**Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope** ( _V_ R=600V, _I_ F=15A, Dynamic test circuit in Figure E) 

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**----- Start of picture text -----**<br>
60A<br>T J =25°C<br>50A<br>175°C<br>40A<br>30A<br>20A<br>10A<br>0A<br>0V 1V 2V<br>V F, FORWARD VOLTAGE<br>FORWARD CURRENT<br>,<br>I F<br>**----- End of picture text -----**<br>


**Figure 27. Typical diode forward current as a function of forward voltage** 

## IKW15N120T2 

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**----- Start of picture text -----**<br>
2.0V I F =30A<br>15A<br>1.5V<br>7.5A<br>2A<br>1.0V<br>0.5V<br>0.0V<br>0°C 50°C 100°C 150°C<br>T J, JUNCTION TEMPERATURE<br>FORWARD VOLTAGE<br>,<br>F<br>V<br>**----- End of picture text -----**<br>


**Figure 28. Typical diode forward voltage as a function of junction temperature** 

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IKW15N120T2 

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## IKW15N120T2 

## **TrenchStop[®]** 2[nd] generation Series 

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**----- Start of picture text -----**<br>
i,v<br>di F /dt t r r =t S + t F<br>Q r r =Q S + Q F<br>t<br>r r<br>I F t S t F<br>I Q S Q F 10%  I r r m t<br>r r m 90%  I di r r /dt V R<br>r r m<br>Figure C. Definition of diodes<br>switching characteristics<br>1 2 n<br>r1 r 2 r n<br>T (t)j<br>p(t) r1 r 2 r n<br>T C<br>**----- End of picture text -----**<br>


**Figure A. Definition of switching times** 

**Figure D. Thermal equivalent circuit** 

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**Figure B. Definition of switching losses** 

**Figure E. Dynamic test circuit** 

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**Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( **www.infineon.com** ) **.** 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

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## Links

- [View this product on Novapart](https://novapart.co/products/IKW15N120T2FKSA1/igbt-30-a-17-v-235-w-12-kv-to-247-3-pins)
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- [Supplier page](https://es.farnell.com/infineon/ikw15n120t2fksa1/igbt-single-1-2kv-30a-to-247-3/dp/2776811)
---

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