# IGBT, 150 A, 1.75 V, 938 W, 1.2 kV, TO-247, 3 Pins
**URL**: https://novapart.co/products/IKQ75N120CT2XKSA1/igbt-150-a-175-v-938-w-12-kv-to-247-3-pins
**SKU**: IKQ75N120CT2XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €7.6600
**Stock**: 10+
**Lead Time**: 323 days (indicative)
## Description
DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:938W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP |
| Power Dissipation | 938W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 150A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3155089/)
## IKQ75N120CT2
## TRENCHSTOP[TM]
ce(sat)
ce(sat)
## **Features:**
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**----- Start of picture text -----**
C
2 technology offers:
CE(sat) , 1.75V at nominal current
circuit withstand time at T vj=175°C
capability due to positive temperature
G
V CE(sat) E
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**----- Start of picture text -----**
*« Complete product spectrum and PSpice Models:
http://www.infineon.com/igbt
Applications:
**----- End of picture text -----**
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKQ75N120CT2|1200V|75A|1.75V|175°C|K75MCT2|PG-TO247-3-46|
Datasheet www.infineon.com
2017-05-02
IKQ75N120CT2
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �2�low�Vce(sat)�second�generation�IGBT
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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IKQ75N120CT2
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## TRENCHSTOP[TM] �2�low�Vce(sat)�second�generation�IGBT
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||1200|V|
|DCcollectorcurrent,limitedby_T_vjmax
_T_C=25°Cvaluelimitedbybondwire
_T_C=137°C|_I_C||150.0
75.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||300.0|A|
|Turn off safe operating area
_V_CE≤1200V,_T_vj≤175°C,_t_p=1µs|-||300.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax
_T_C=25°Cvaluelimitedbybondwire
_T_C=100°C|_I_F||150.0
75.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||300.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time
_V_GE=15.0V,_V_CC≤600V
Allowed number of short circuits < 1000
Time between short circuits:≥1.0s
_T_vj=175°C|_t_SC||10|µs|
|Powerdissipation_T_C=25°C
Powerdissipation_T_C=137°C|_P_tot||938.0
237.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,
wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,1)
junction - case|_R_th(j-C)||-|-|0.16|K/W|
|Diode thermal resistance,1)
junction - case|_R_th(j-C)||-|-|0.28|K/W|
|Thermal resistance
junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included.
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IKQ75N120CT2
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �2�low�Vce(sat)�second�generation�IGBT
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=75.0A
_T_vj=25°C
_T_vj=175°C|-
-|1.75
2.30|2.15
-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=75.0A
_T_vj=25°C
_T_vj=175°C|-
-|1.90
1.85|2.30
-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.88mA,_V_CE=_V_GE|5.1|5.8|6.5|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V
_T_vj=25°C
_T_vj=150°C
_T_vj=175°C|-
-|-
-
5000|450
-
-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=75.0A|-|27.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|4856|-|pF|
|Output capacitance|_C_oes||-|505|-||
|Reverse transfer capacitance|_C_res||-|290|-||
|Gate charge|_Q_G|_V_CC=960V,_I_C=75.0A,
_V_GE=15V|-|370.0|-|nC|
|Internal emitter inductance
measured 5mm (0.197 in.) from
case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,
_V_CC=600V,_I_C=75.0A,
_V_GE=0.0/15.0V,
_R_G(on)=6.0Ω,_R_G(off)=6.0Ω,
_L_σ=90nH,_C_σ=67pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|37|-|ns|
|Rise time|_t_r||-|49|-|ns|
|Turn-off delaytime|_t_d(off)||-|326|-|ns|
|Fall time|_t_f||-|46|-|ns|
|Turn-on energy|_E_on||-|6.70|-|mJ|
|Turn-off energy|_E_off||-|4.10|-|mJ|
|Total switchingenergy|_E_ts||-|10.80|-|mJ|
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IKQ75N120CT2
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �2�low�Vce(sat)�second�generation�IGBT
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,
_V_R=600V,
_I_F=75.0A,
_di_F_/dt_=800A/µs|-|320|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|5.10|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|29.0|-|A|
|Diode peak rate of fall of reverse
recoverycurrentduring_t_b|_di_rr_/dt_||-|-300|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,
_V_CC=600V,_I_C=75.0A,
_V_GE=0.0/15.0V,
_R_G(on)=6.0Ω,_R_G(off)=6.0Ω,
_L_σ=90nH,_C_σ=67pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|35|-|ns|
|Rise time|_t_r||-|50|-|ns|
|Turn-off delaytime|_t_d(off)||-|460|-|ns|
|Fall time|_t_f||-|103|-|ns|
|Turn-on energy|_E_on||-|10.30|-|mJ|
|Turn-off energy|_E_off||-|9.10|-|mJ|
|Total switchingenergy|_E_ts||-|19.40|-|mJ|
|**DiodeCharacteristic,at****_T_vj=175°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,
_V_R=600V,
_I_F=75.0A,
_di_F_/dt_=800A/µs|-|600|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|13.30|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|42.0|-|A|
|Diode peak rate of fall of reverse
recoverycurrentduring_t_b|_di_rr_/dt_||-|-125|-|A/µs|
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Datasheet
5
IKQ75N120CT2
TRENCHSTOP[TM]
ce(sat)
**==> picture [474 x 322] intentionally omitted <==**
**----- Start of picture text -----**
PtCCLTETT 1000900 Pf of
100
ee ff]
Se 800 Ne
not for linear use
£ Pe e 700
6 Co oie = \
eB PN
600
10
B T § IN
500
G: |PL TUTTI TTTTTT |g 400300 awPty TN
SU 1 I EF * :
PeCTI CIEI CEI 200100 Pf ff | \
0.1 a a 0 P| | |tN
1 10 100 1000 25 50 75 100 125 150 175
V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]
Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case
( D =0, T C =25°C, T vj 175°C; V GE=15V) temperature
( T vj ≤ 175°C)
I C P tot
**----- End of picture text -----**
**==> picture [469 x 322] intentionally omitted <==**
**----- Start of picture text -----**
160 300
VGE=20V
m e 270 17V Ne
140
15V
240
120 PON. BRSSN44-> 13V
210
11V
ONT ESS
100 9V
180
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ee S S S
0 e 0 n A nn ee
25 50 75 100 125 150 175 0 1 2 3 4 5
T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]
Figure 3. Collector current as a function of case Figure 4. Typical output characteristic
temperature ( T vj=25°C)
( V GE ≥ 15V, T vj ≤ 175°C)
I C I C
**----- End of picture text -----**
6
Datasheet
2017-05-02
IKQ75N120CT2
ce(sat)
## TRENCHSTOP[TM]
**==> picture [474 x 679] intentionally omitted <==**
**----- Start of picture text -----**
300 300
VGE=20V Tvj = 25°C
270 17V 270 Tvj = 175°C
15V
240 NEY. a 240 | = | i | ///
/
13V
NNEEEEP? e e
210 210
11V
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9V
180 180
=)ae 7V QQ 44 BPD /
150 150
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90 90
. . /
: ABSlL} 3 |
60 60
Pee P| |x | |
30 30
fee || Yt ft
a Vann
0 0
0 1 2 3 4 5 4 6 8 10 12 14 16
V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]
Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic
( T vj=175°C) ( V CE=20V)
4.5 1000
IC = 38A a
IC = 75A re a eeeee
4.0 IC = 150A
_ = | a ee
td(off)
ee 3.5 e e tf
td(on)
tr
3.0 100
=poe= = Te£ | EE rt
o - uw a a
2.5
tut “7 = a ce es
| - a es ee ee ee
2.0
i [|| far = esee
peop 1.5 TT ye 10 [et
o ee — ee — ” a
Ss}ee. 1.0 aa eeee ee
0.5
ee ee eee
ee
0.0 1
25 50 75 100 125 150 175 0 30 60 90 120 150
T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]
Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of
a function of junction temperature collector current
( V GE=15V) (inductive load, T vj =175°C, V CE=600V,
I C I C
t
CEsat
V
**----- End of picture text -----**
_V_ GE =0/15V, _r_ G=6 Ω Figure E)
Datasheet
7
2017-05-02
IKQ75N120CT2
## TRENCHSTOP[TM]
ce(sat)
**==> picture [230 x 299] intentionally omitted <==**
**----- Start of picture text -----**
td(off)
tf
1000 td(on) + |
tr
' se
epee
re ee
gL}F| |} | |
g
ee 100
e ee a ec eee eee
=a peea a aeSEIeeimme
a a a
HE
a
10
0 5 10 15 20 25 30 35 40
r G , GATE RESISTOR [ Ω ]
Figure 9. Typical switching times as a function of
resistor
t
**----- End of picture text -----**
**==> picture [151 x 28] intentionally omitted <==**
**----- Start of picture text -----**
(inductive load, T vj =175°C, V CE=600V,
V GE =0/15V, I C =75A, Dynamic test
Figure E)
**----- End of picture text -----**
**==> picture [233 x 286] intentionally omitted <==**
**----- Start of picture text -----**
1000
td(off)
a | t a f poa
I| td(on) are eeeeee eee e e
tr
| ee ee
P r
ee
F
S 100 a a a
el
a ee ee ee
S eee= ee
(OO WN NNN OOOO OOOO EI
ES
10
25 50 75 100 125 150 175
T vj , JUNCTION TEMPERATURE [°C]
t
**----- End of picture text -----**
Figure 10.
**==> picture [154 x 28] intentionally omitted <==**
**----- Start of picture text -----**
(inductive load, V CE =600V, V GE=0/15V,
I C =75A, r G=6 , Dynamic test circuit in
Figure E)
**----- End of picture text -----**
**==> picture [474 x 286] intentionally omitted <==**
**----- Start of picture text -----**
8 60
typ. Eoff
min. Eon
max. Ets
7
50
~ Pree ‘=
O 6 > ~ — /
> ~~ i) /
= : LLL .
40
9 ~e WW /
~~ ~L S / /
fe) ~~ he 2 ;
5 — = = > / J
« ~ ~ ~S i 30 / Z
o 4 rm ~“ Ww ;
20
uuLui 3 NN) == //
Ee a Pa /
é | Oe
10
2
1 0
25 50 75 100 125 150 175 0 30 60 90 120 150
T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]
E
GE(th)
V
**----- End of picture text -----**
Figure 11. Gate-emitter of junction ( _I_ C=1,875mA)
Figure 12.
(inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _r_ G=6 Ω , Dynamic test Figure E)
8
Datasheet
2017-05-02
IKQ75N120CT2
## TRENCHSTOP[TM]
## ce(sat)
**==> picture [474 x 341] intentionally omitted <==**
**----- Start of picture text -----**
40 20
Eoff Eoff
Eon 18 Eon
35 Ets Ets
16
& 30 ° & a
nm a nm 14
7) a“ 7) Ute
op) a (dp) “7
25
- ea 4 12 4
2 “ 25 a
w Pa a x =
Lu 20 a uw 108 = eS
15
E- 6
: 7 oS] 8 bee as
10
4
5
2
0 0
0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175
r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]
Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a
function of gate resistor function of junction temperature
(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,
V GE =0/15V, I C =75A, Dynamic test circuit in I C =75A, r G=6 , Dynamic test circuit in
Figure E) Figure E)
E E
**----- End of picture text -----**
**==> picture [474 x 285] intentionally omitted <==**
**----- Start of picture text -----**
30 16 P|
Eoff V CC
— = 240V / yo
Eon V CC
Ets ve 14 _-- a= 960V /
25
Fz “a YY
12
(op) a Ww
DQ 20 P aa Q< / /
e) “ a 10
i a fe)
ow a o
LU 15 ZF - = 8
Zz oc a— =
Lu ra = — S
Zz ao Ww 6
10
4
5
2
0 0
400 500 600 700 800 0 50 100 150 200 250 300 350 400
V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]
GE
V
E
**----- End of picture text -----**
Figure 15.
Figure 16. Typical ( _I_ C=75A)
**==> picture [154 x 29] intentionally omitted <==**
**----- Start of picture text -----**
(inductive load, T vj =175°C, V GE=0/15V,
I C =75A, r G=6 , Dynamic test circuit in
Figure E)
**----- End of picture text -----**
9
Datasheet
2017-05-02
IKQ75N120CT2
## TRENCHSTOP[TM]
## ce(sat)
**==> picture [471 x 322] intentionally omitted <==**
**----- Start of picture text -----**
600
Cies
Coes
Cres
- 500 /
1E+4 ely e titty
a
a a ee eee
a aes oe
rs a a 400 7
re eeSe
2 fo) dE PY
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2 IA Ae
1000
Ee ee es
ce. PpoONSSSTSS aeg 200 ALI“
ae ee os LZ
pa aL
100
~~}} fers Yn Peer
100 0
0 5 10 15 20 25 30 10 11 12 13 14 15 16 17 18
V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]
Figure 17. Typical capacitance as a function of Figure 18. Typical short circuit collector current as a
collector-emitter voltage function of gate-emitter voltage
( V GE =0V, f=1MHz) ( V CE 600V, T vj 175°C)
C
I C(SC)
**----- End of picture text -----**
**==> picture [469 x 322] intentionally omitted <==**
**----- Start of picture text -----**
45
man
PP 0.1 wezaatl |
40 LLL > Sesriem Se ea
= AL
35 D = 0.5
s fe A Ty 0.2 LCT
0.1
30
Z no —T Af
: 7A 0.05
0.01
0.02
25
= S fe 0.01 |
= rd THM eat CM single pulse TT
20
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TrnO 10 Py} NEE]> a Ey 2sE FEoTa A| ani(tiill
. SN , AN
5 Poa AE FC T FTIE oomchim, oomco=teieeoo_ Ill
i: 1 2 3 4 5
ri[K/W]: 0.02275 0.047736 0.08788 2.0E-3 2.7E-4
τ i[s]: 3.8E-4 2.7E-3 0.019881 0.505051 12.95671
ee PA/ || eeaa
0 1E-4
10 12 14 16 18 20 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]
Figure 19. Short circuit withstand time as a function of Figure 20. IGBT transient thermal resistance
gate-emitter voltage ( D = t p/T)
( V CE 600V, start at T vj ≤ 175°C)
t SC c)th(j-
Z
**----- End of picture text -----**
10
Datasheet
2017-05-02
IKQ75N120CT2
TRENCHSTOP[TM]
ce(sat)
**==> picture [482 x 286] intentionally omitted <==**
**----- Start of picture text -----**
1000
EY —_____—__— Tvj = 25°C, IF = 75A
Tvj = 175°C, IF = 75A
co aa ac 900
= 0.1 Comesll a| y
D = 0.5
800
2 CCICI “Cera 0.2 ny \
| 0.1 \
LUa eeLo 0.05 eee >es 700 :
0.02
gee 0.01 eran 70 \
0.01
ESwd pteeetere | O5 600 \ .
Ww aa |,ee single pulse [TT ifoe NY \ \
E Se lu 500 w~ \
b Ai x .
0.001
Zz O a -- Z&~ 400 N
s Pe Ri Re i wy
E (| 1 tTiM
eg erA me 300 =C—_
i: 1 2 3 4 5
ri[K/W]: 0.01104 0.10889 0.1573 2.8E-3 3.0E-4
τ i[s]: 3.6E-4 2.7E-3 0.01681 0.44863 12.11241
1E-4 APA eeee | 200 Py yf fy
1E-6 1E-5 1E-4 0.001 0.01 0.1 1 400 500 600 700 800 900 1000
t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]
t rr
c)th(j-
Z
**----- End of picture text -----**
Figure 21.
( _D_ = _t_ p/T)
Figure 22.
( _V_ R=600V)
**==> picture [476 x 285] intentionally omitted <==**
**----- Start of picture text -----**
16 50
Tvj = 25°C, IF = 75A Tvj = 25°C, IF = 75A
Tvj = 175°C, IF = 75A Tvj = 175°C, IF = 75A
14
7
Ed | 40 SE ane
12
: poe
10
é eee
30
SPp oO> 7
Q: 8 e)Boea
20
uw 6 WwW
ose 4 =—— eee
10
2 P| | tt
0 0
400 500 600 700 800 900 1000 400 500 600 700 800 900 1000
di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]
Q rr I rr
**----- End of picture text -----**
Figure 23. Typical function ( _V_ R=600V)
Figure 24.
( _V_ R=600V)
11
Datasheet
2017-05-02
IKQ75N120CT2
ce(sat)
## TRENCHSTOP[TM]
**==> picture [466 x 643] intentionally omitted <==**
**----- Start of picture text -----**
0 300
Tvj = 25°C, IF = 75A Tvj = 25°C
Tvj = 175°C, IF = 75A 270 Tvj = 175°C
-50 Ee= Ji] Bouye
240 a / ;
my
ia -100 = ~ eee=< 210
-150
©o RN \ \ ra 180 / /
et2 ooN UN a)| EL
-200 150
& \ \ O
% a / /
g < 120 /
o -250 \ aS |
:: eLTT 90 TL TT AR
-300
60
TTR
-350
30
NN TA
pt BaP Aneee
-400 0
S | E a
400 500 600 700 800 900 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]
Figure 25. Typical diode peak rate of fall of reverse Figure 26. Typical diode forward current as a
recovery current as a function of diode of forward voltage
current slope
( V R=600V)
3.5
IF = 38A
IF = 75A
IF = 150A
3.0
2.5
Ww
ke
I 2.0
O
>
Q
1.5
LL
1.0
0.5
0.0
25 50 75 100 125 150 175
T vj , JUNCTION TEMPERATURE [°C]
I rr
/dt I F
rr
dI
F
V
**----- End of picture text -----**
Figure 27.
12
Datasheet
2017-05-02
IKQ75N120CT2
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �2�low�Vce(sat)�second�generation�IGBT
## **Package Drawing PG-TO247-3-46**
**==> picture [174 x 343] intentionally omitted <==**
**==> picture [52 x 258] intentionally omitted <==**
**==> picture [357 x 197] intentionally omitted <==**
**----- Start of picture text -----**
MILLIMETERS INCHES
DIM
MIN MAX MIN MAX
A 4.90 5.10 0.193 0.201 DOCUMENT NO.
A1 2.31 2.51 0.091 0.099 Z8B00174295
A2 1.90 2.10 0.075 0.083
b 1.16 1.26 0.046 0.050 SCALE 0
b1 1.96 2.25 0.077 0.089
b2 1.96 2.06 0.077 0.081
0 5 5
c 0.59 0.66 0.023 0.026 7.5mm
D 20.90 21.10 0.823 0.831
D1 16.25 16.85 0.640 0.663
EUROPEAN PROJECTION
D2 1.05 1.35 0.041 0.053
D3 0.58 0.78 0.023 0.031
E 15.70 15.90 0.618 0.626
E1 13.10 13.50 0.516 0.531
E3 1.35 1.55 0.053 0.061
e 5.44 (BSC) 0.214 (BSC) ISSUE DATE
N 3 3 13-08-2014
L 19.80 20.10 0.780 0.791
L1 - 4.30 - 0.169 REVISION
R 1.90 2.10 0.075 0.083 01
**----- End of picture text -----**
13
V�2.2 2017-05-02
Datasheet
IKQ75N120CT2
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �2�low�Vce(sat)�second�generation�IGBT
## **Testing Conditions**
**==> picture [252 x 588] intentionally omitted <==**
**----- Start of picture text -----**
V GE (t)
90% V GE
10% V GE t
I C (t)
90% I C 90% I C
10% I C 10% I C
t
V CE (t)
t
t d(off) t f t d(on) t r
Figure A.
V GE (t)
90% V GE
10% V GE
t
I C (t)
2% I C t
V CE (t)
t 2 t 4
E off [=] V CE x I C x d t E on [=] V CE x I C x d t
t 1 t 3 2% V CE
t
t 1 t 2 t 3 t 4
Figure B.
**----- End of picture text -----**
**==> picture [153 x 99] intentionally omitted <==**
**----- Start of picture text -----**
I,V
dI F /dt Qt rrrr== Qt aa++ tQ b b
a b
Q a Q b
dI
**----- End of picture text -----**
Figure C. **Definition of diode switching characteristics**
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**
t
**----- End of picture text -----**
**==> picture [169 x 63] intentionally omitted <==**
Figure D.
**==> picture [7 x 4] intentionally omitted <==**
**----- Start of picture text -----**
CC
**----- End of picture text -----**
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
14
V�2.2 2017-05-02
Datasheet
IKQ75N120CT2
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �2�low�Vce(sat)�second�generation�IGBT
## **Revision�History**
IKQ75N120CT2
## **Revision:�2017-05-02,�Rev.�2.2**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2017-04-26|Final data sheet|
|2.2|2017-05-02|Update figure 7|
15
V�2.2 2017-05-02
Datasheet
## party.
## **Warnings**
## Links
- [View this product on Novapart](https://novapart.co/products/IKQ75N120CT2XKSA1/igbt-150-a-175-v-938-w-12-kv-to-247-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ikq75n120ct2xksa1/igbt-1-2kv-150a-to-247-3/dp/3155089)
---
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