# IGBT, 62 A, 1.45 V, 188 W, 650 V, TO-220, 3 Pins

![Product image](https://novapart.co/image/farnell:3051962/)

**URL**: https://novapart.co/products/IKP39N65ES5XKSA1/igbt-62-a-145-v-188-w-650-to-220-3-pins
**SKU**: IKP39N65ES5XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.2400
**Stock**: 200+
**Lead Time**: 141 days (indicative)

## Description

DC Collector Current:62A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:188W; Collector Emitter Voltage V(br)ceo:650V; Tra; Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 S5 |
| Power Dissipation | 188W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-220 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 62A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.45V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3051962/)

IKP39N65ES5 

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TRENCHSTOP [TM] 5 high speed soft switching IGBT copacked with full rated<br>current RAPID 1 fast and soft anti parallel diode<br>Features and Benefits: C<br>High speed S5 technology offering<br>* High speed smooth switching device for hard & soft switching<br>« Very Low V CEsat<br>* 650V breakdown voltage<br>G<br>«Low Q G E<br>¢ IGBT copacked with full rated current RAPID 1 fast antiparallel<br>diode<br>C<br>* Maximum junction temperature 175°C<br>¢ Pb-free lead plating; ROHS compliant \<br>*« Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>3.“zag!<br>Potential Applications: a m. [/]<br>* Drives y A yr<br>+ Industrial Power Supplies , sf S<br>- Industrial SMPS fw of<br>- Industrial UPS es ff ff<br>¢ Metal Treatment G ~<br>C<br>E<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKP39N65ES5|650V|39A|1.45V|175°C|K39EES5|PG-TO220-3|



Datasheet www.infineon.com 

2019-01-25 

IKP39N65ES5 

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## High�speed�switching�series�5�[th] �generation 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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## High�speed�switching�series�5�[th] �generation 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||62.0<br>39.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_F||40.0<br>39.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||120.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||188.0<br>94.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|



|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.80|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.00|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|62|K/W|



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## High�speed�switching�series�5�[th] �generation 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=39.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.60<br>1.70|1.85<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=39.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.63<br>1.60|2.00<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.39mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>2300|50<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=39.0A|-|40.0|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1800|-|pF|
|Output capacitance|_C_oes||-|55|-||
|Reverse transfer capacitance|_C_res||-|7|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=39.0A,<br>_V_GE=15V|-|70.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=39.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.8Ω,_R_G(off)=12.8Ω<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|30|-|ns|
|Turn-off delaytime|_t_d(off)||-|120|-|ns|
|Fall time|_t_f||-|25|-|ns|
|Turn-on energy|_E_on||-|0.80|-|mJ|
|Turn-off energy|_E_off||-|0.50|-|mJ|
|Total switchingenergy|_E_ts||-|1.30|-|mJ|



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## High�speed�switching�series�5�[th] �generation 

|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.8Ω,_R_G(off)=12.8Ω<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|17|-|ns|
|Turn-off delaytime|_t_d(off)||-|138|-|ns|
|Fall time|_t_f||-|21|-|ns|
|Turn-on energy|_E_on||-|0.35|-|mJ|
|Turn-off energy|_E_off||-|0.25|-|mJ|
|Total switchingenergy|_E_ts||-|0.60|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=39.0A,<br>_di_F_/dt_=1250A/µs|-|84|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.85|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|19.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-320|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=988A/µs|-|63|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.60|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|18.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-514|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=39.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.8Ω,_R_G(off)=12.8Ω<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|16|-|ns|
|Rise time|_t_r||-|30|-|ns|
|Turn-off delaytime|_t_d(off)||-|130|-|ns|
|Fall time|_t_f||-|50|-|ns|
|Turn-on energy|_E_on||-|0.85|-|mJ|
|Turn-off energy|_E_off||-|0.68|-|mJ|
|Total switchingenergy|_E_ts||-|1.53|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.8Ω,_R_G(off)=12.8Ω<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|15|-|ns|
|Rise time|_t_r||-|16|-|ns|
|Turn-off delaytime|_t_d(off)||-|155|-|ns|
|Fall time|_t_f||-|47|-|ns|
|Turn-on energy|_E_on||-|0.44|-|mJ|
|Turn-off energy|_E_off||-|0.37|-|mJ|
|Total switchingenergy|_E_ts||-|0.81|-|mJ|



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## High�speed�switching�series�5�[th] �generation 

**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=39.0A,<br>_di_F_/dt_=1080A/µs|-|93|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.50|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|27.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-553|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1050A/µs|-|80|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.10|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|24.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-532|-|A/µs|



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200 70<br>180<br>Kite ety 60 bE] tt<br>160 Sey yd<br>50<br>140<br>PX de INLX<br>120<br>eee 40 eee<br>100<br>NSS Nee<br>30<br>80<br>PEN<br>60<br>PING ye FA 20<br>40<br>NS<br>10<br>20<br>TT \<br>0 PEE EIN 0 LLL LA<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>120 120<br>VGE = 20V VGE = 20V<br>18V 18V<br>100 15V ——4]// 100 15V Sy,<br>/<br>14V 14V<br>12V 12V<br>80 80<br>10V 10V<br>8V 8V<br>60 60<br>6V 6V<br>4V 4V<br>40 40<br>20 20<br>FSX<br>0 | 0 | 4 A<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>


Figure 3. Typical ( _T_ vj=25°C) 

Figure 4. Typical ( _T_ vj=175°C) 

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120 3.0<br>Tvj = 25°C IC = 15A<br>Tvj = 175°C IC = 39A<br>IC = 60A<br>100 2.5<br>z<br>/ SO<br>= / Ee<br>x= / bs _——<br>80 2.0<br>Pa rE = :<br>i <x ---<br>oe ep)<br>Oo F _—<br>60 1.5<br>O | a<br>4 O<br>40 1.0<br>fe) 5 | | | [| J | |<br>(e)<br>O<br>20 0.5<br>/ /<br>cA<br>0 0.0<br>0 2 4 6 8 10 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>


Figure 5. Typical ( _V_ CE=20V) 

Figure 6. Typical a function ( _V_ GE=15V) 

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1000 a SS SS SS 1000 a SS SS ES SS<br>I|1 ttd(off)f a es eS eeee ee |i| ttd(off)f aapoes ee ee ee<br>td(on) td(on)<br>tr tr<br>| a | ee eee<br>Pt te tt | | t et| |<br>2=2 100 [porea SSTn]SS ee=«CoB 100 a/ a es es es<br>ip) a ip) a ee ee ee ee ee ee<br>uw a a a a a Pk<br>= aS a ee ee ee ee = re ee ee ee ee eee<br>- a a es re il ll ee eee ales i ee ee re eet A<br>Q a ee ee a ee ce<br>soE ccee E et<br>Pe l-teery<br>10 10<br>2)- a a es | ye2) fea SS SS<br>poe - a a<br>aaa<br>aa a ee ee ee ee a a eeee ee ee<br>ee ee ee ee a ee<br>pA; 7 | | tt | P| te | |<br>1 1<br>0 10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60 70 80 90<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=12,8 Ω , Dynamic test circuit in V GE =15/0V, I C =39A,Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>


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1000 aa 6<br>| 1 td(off) a aee aee ee typ.<br>I tf a ee ee ee eee _<br>I td(on) a ee<br>tr 5<br>| a a ee ee ee W<br>e e ee Kk<br>e e<br>—z 100 [ | __| a 4<br>ip) se i<br>im poa a a (e)<br>= a oO<br>F es ee Wy<br>3<br>OQ e e ee ee ee =<br>a ee ee ee ee<br>= La<br>ee: 2)7 10 po a eS Ww= 2<br>ee<br>a ee se x<br>a eseo)<br>Oe es 1<br>1 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 9. 

Figure 10. 

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**----- Start of picture text -----**<br>
(inductive load, V CE =4000V, V GE=15/0V, ( I C=0.39mA)<br>I C =39A, r G=12,8 Ω , Dynamic test circuit in<br>Figure E)<br>5.0 4.0<br>Eoff Eoff<br>4.5 Eon Eon<br>E Ets LL 3.5 F Ets EW<br>/<br>4.0<br>f £ o./ E 3.0 eT } | ft) tb“<br>Lu 3.5 Lu ea<br>7) / 7) a<br>(op) icp) xa<br>2.5<br>o 3.0 —! eae<br>w ad o<br>ra 2.5 , ra 2.0 7 ;<br>9 2.0 4 oO oe |"<br>1.5<br>Zz ? 7 Zz : -<br>S| es OF .<br>Fe 1.5 > ° 7 L ZO re “7<br>1.0<br>1.0 -_<br>| 4 eT 0.5<br>0.5<br>0.0 0.0<br>0 10 20 30 40 50 60 70 80 90 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=12,8 Ω , Dynamic test circuit V GE =15/0V, I C =39A, Dynamic test circuit in<br>in Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


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2.25 2.25<br>Eoff Eoff<br>Eon Eon<br>2.00 Ets 2.00 Ets<br>= | = | ?oo”<br>><br>— = 1.75 —E 1.75 7y<br>Ww Ww Y<br>cp)7) 1.50 ip)7) 1.50 ¢<br>—! —! ”<br>><br>© 1.25 © 1.25 a 7<br>Zz Zz ¢<br>Ww 1.00 Ww 1.00 3¢7<br>oO © of a<br>Zz Z o ? a<br>0.75 0.75 “<br>= =<br>= 2 ee<br>2)i 0.50 SE eee =2) 0.50 - a —|<br>a eee<br>0.25 0.25<br>0.00 0.00<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,<br>I C =39A, r G=12,8 Ω , Dynamic test circuit in I C =39A, r G=12,8 Ω , Dynamic test circuit in<br>Figure E) Figure E)<br>16 -— 1E+4 oe<br>1 | a es<br>V CC Cies<br>V CC Coes<br>—— = =520V / 1 a a a<br>14 a ! I Cres eeee ee<br>S 12 | 1000 a<br>oO —_ a ee es<br><x LL po<br>a 10 ; 2 a eeee<br>e a Ok<br>Zz<br>8 100<br>= <t hh es lee<br>Lu o<br>Ww 6 _ = a<br>KE y cS) a<br>cf es ee<br>4 10 po |<br>a es ss ee<br>po<br>2 a eeee<br>0 1<br>0 10 20 30 40 50 60 70 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=39A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1<br>PT nmr TTT ET<br>a<br>1<br>Sri eri eg ee arattm<br>Ssx aSe mn|ell Trt LfYYVA Ssx | a |<br>D = 0.5 D = 0.5<br>8 COC Tg Fe<br>0.2 0.2<br>2 aH 2 Cc<br>{ E<br>SLE 0.1 ALI) sii sulle 0.1 no<br>0.1<br>(a)nm rrreeCA i 0.05 Coo nh nw m 0.1 qt!egPest! J (||LLys 0.05<br>7x erZe"- == /  oo|anil | eT 0.02 LETTT TETTT Cia) F Aaa Fn 0.02 ||<br>Hf | 0.01 <x ee a 0.01<br>= DN Se a tl S etVp || errr | ||<br>ei| | LHWe wee +t single pulse 2Te mamiCoeueeracee) AN> canaPa  TTT single pulse ou<br>0.01<br>zZ ia SMAke i-a ANNIE<br>0.01<br>)<br>= EAC H " Hs | [AIPA] [C]<br>F. PATETE HAH Leis etic, fF ATCOTO cli, ottrme Il<br>PANN UTI IME Pees cece PAC Cno oo<br>Y A VN TT CTT EIT 7cCc<br>i: 1 2 3 4 5 6 i: 1 2 3 4 5 6<br>ri[K/W]: 0.022752 0.226505 0.36565 0.192393 0.011903 1.8E-3 ri[K/W]: 0.028938 0.275486 0.438616 0.205968 0.013129 2.0E-3<br>τ i[s]: 2.6E-5 2.9E-4 2.8E-3 0.012412 0.210726 3.179847 τ i[s]: 2.8E-5 2.9E-4 2.7E-3 0.012584 0.209711 3.036355<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 17. IGBT transient thermal resistance Figure 18. Diode transient thermal impedance as a<br>( D = t p/T) function of pulse width<br>( D = t p/T)<br>160 2.00<br>Tvj = 25°C, IF = 39A Tvj = 25°C, IF = 39Avj = 25°C, IF = 39A = 25°C, IF = 39AF = 39A = 39A<br>Tvj = 150°C, IF = 39A Tvj = 150°C, IF = 39Avj = 150°C, IF = 39A = 150°C, IF = 39AF = 39A = 39A<br>140 1.75<br>\\= oO _—<br>£ 120 Wl 1.50 ==<br>Ww \ na<br>F> 100 —S > 5 1.25<br>oOimO 80 ~~ >OoOOoOO 1.00 |<br>60 0.75<br>Ww nd<br>> uw<br>40 0.50<br>20 0.25<br>0 0.00<br>500 700 900 1100 1300 1500 500 700 900 1100 1300<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>c)th(j- c)th(j-<br>Z Z<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
2.00<br>Tvj = 25°C, IF = 39Avj = 25°C, IF = 39A = 25°C, IF = 39AF = 39A = 39A<br>Tvj = 150°C, IF = 39Avj = 150°C, IF = 39A = 150°C, IF = 39AF = 39A = 39A<br>1.75<br>= oO _—<br>Wl 1.50 ==<br>na<br>5 1.25<br>1.00<br>>OoOOoOO |<br>0.75<br>nd<br>uw<br>0.50<br>0.25<br>0.00<br>500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>rr<br>Q<br>**----- End of picture text -----**<br>


Figure 19. 

Figure 20. 

( _V_ R=400V) 

( _V_ R=400V) 

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## th 

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**----- Start of picture text -----**<br>
35 Ld 0 Ld<br>Tvj = 25°C, IF = 39A Tvj = 25°C, IF = 39A<br>Tvj = 150°C, IF = 39A Tvj = 150°C, IF = 39A<br>30<br>= -100 __<br>i 7 a<br>25 “ <<br>z<br>: -200<br>=)> 20 caneZ7 :ow=<br>oO 7 2 S<br>-300<br>3“7 # ~~<br>O x<br>imcc 15 — — | ©g \<br>3 : :<br>-400<br>or 8<br>10<br>S 5 \<br>vg \<br>N<br>-500<br>5<br>\,<br>0 -600<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>


Figure 21. 

Figure 22. 

**==> picture [43 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
( V R=400V)<br>**----- End of picture text -----**<br>


( _V_ R=400V) 

**==> picture [475 x 286] intentionally omitted <==**

**----- Start of picture text -----**<br>
120 Tvj ——  = 25°C / 3.0 IF = 15A<br>= Tvj = 150°C / IF = 39A<br>IF = 60A<br>100 || / 2.5<br>=ga 80 TH/ Ww2FE 2.0<br>w I<br>a)O / Q<br>60 1.5<br>:e e<br>=<br>S$ <<br>40 1.0<br>: § |<br>V4 j V4<br>]/,<br>20 0.5<br>7<br>x<br>0 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175<br>V F ,FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>


Figure 23. 

Figure 24. 

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**==> picture [86 x 38] intentionally omitted <==**

## High�speed�switching�series�5�[th] �generation 

## **Package Drawing PG-TO220-3** 

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## High�speed�switching�series�5�[th] �generation 

## **Testing Conditions** 

**==> picture [252 x 588] intentionally omitted <==**

**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


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Figure D. 

**==> picture [7 x 4] intentionally omitted <==**

**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

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## High�speed�switching�series�5�[th] �generation 

## **Revision�History** 

IKP39N65ES5 

## **Revision:�2019-01-25,�Rev.�2.1** 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2019-01-25|Final data sheet|



15 

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## **Trademarks** 

## party. 

## **Warnings** 



## Links

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- [Supplier page](https://es.farnell.com/infineon/ikp39n65es5xksa1/igbt-650v-62a-175deg-c-188w/dp/3051962)
---

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