# IGBT, 15 A, 1.65 V, 105 W, 650 V, TO-220, 3 Pins

![Product image](https://novapart.co/image/farnell:2363289/)

**URL**: https://novapart.co/products/IKP15N65H5XKSA1/igbt-15-a-165-v-105-w-650-to-220-3-pins
**SKU**: IKP15N65H5XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.7050
**Stock**: 10+

## Description

DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:105W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No. of Pins:3Pins;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 |
| Power Dissipation | 105W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-220 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 15A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.65V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2363289/)

## IGBT 

High speed 5 IGBT in TRENCHSTOP _ TM technology copacked with RAPID 1 

IKP15N65H5 

IKP15N65H5 

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High speed 5 IGBT in TRENCHSTOP TM _ technology copacked with RAPID 1<br>fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed H5d technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>¢ 650V breakdown voltage<br>E<br>«Low Q G<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>C<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications ‘<br>¢ Pb-free lead plating; ROHS compliant<br>« Complete product spectrum and PSpice Models: bof<br>http://www.infineon.com/igbt/<br><<ihp<br>Applications:<br>* Solar converters is £<br>* Uninterruptible power supplies fs ff<br>* Welding converters A ad<br>* Mid to high range switching frequency converters £ 4 yf<br>G<br>C<br>E<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKP15N65H5|650V|15A|1.65V|175°C|K15EH5|PG-TO220-3|



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## High�speed�switching�series�fifth�generation 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 

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## High�speed�switching�series�fifth�generation 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emitter voltage|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||30.0<br>18.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||45.0|A|
|Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||45.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||20.0<br>12.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||45.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||105.0<br>52.5|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|



## **Thermal�Resistance** 

|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||1.40|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||2.90|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||62|K/W|



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## High�speed�switching�series�fifth�generation 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=15.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=9.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.15mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>4000.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=15.0A|-|22.0|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|930|-|pF|
|Output capacitance|_C_oes||-|24|-||
|Reverse transfer capacitance|_C_res||-|4|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=15.0A,<br>_V_GE=15V|-|38.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=7.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns|
|Rise time|_t_r||-|7|-|ns|
|Turn-off delaytime|_t_d(off)||-|160|-|ns|
|Fall time|_t_f||-|10|-|ns|
|Turn-on energy|_E_on||-|0.12|-|mJ|
|Turn-off energy|_E_off||-|0.05|-|mJ|
|Total switchingenergy|_E_ts||-|0.17|-|mJ|



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## High�speed�switching�series�fifth�generation 

|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|16|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|3|-|ns|
|Turn-off delaytime|_t_d(off)||-|138|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.04|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.06|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=7.5A,<br>_di_F_/dt_=1000A/µs|-|48|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.20|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|8.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-200|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=1000A/µs|-|25|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.09|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|6.7|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-500|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=7.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|16|-|ns|
|Rise time|_t_r||-|8|-|ns|
|Turn-off delaytime|_t_d(off)||-|180|-|ns|
|Fall time|_t_f||-|16|-|ns|
|Turn-on energy|_E_on||-|0.18|-|mJ|
|Turn-off energy|_E_off||-|0.08|-|mJ|
|Total switchingenergy|_E_ts||-|0.26|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|14|-|ns|
|Rise time|_t_r||-|4|-|ns|
|Turn-off delaytime|_t_d(off)||-|220|-|ns|
|Fall time|_t_f||-|30|-|ns|
|Turn-on energy|_E_on||-|0.06|-|mJ|
|Turn-off energy|_E_off||-|0.03|-|mJ|
|Total switchingenergy|_E_ts||-|0.09|-|mJ|



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## High�speed�switching�series�fifth�generation 

**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=7.5A,<br>_di_F_/dt_=1000A/µs|-|74|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.42|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|11.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-160|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=1000A/µs|-|42|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.21|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|10.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-310|-|A/µs|



Rev.�2.1,��2015-05-05 

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**----- Start of picture text -----**<br>
110<br>} ee || ee etteeett II 100 RK  fff<br>Pt PALIN NT tT \<br>90<br>- PNR Nee<br>10 L/INT). 80 EAE TT<br>awd TeER ieNOAASee eel O= 70<br>tp=1µs<br>or | | CU INT AN SNS < 60 Nee eee<br>o PP 10µs re NSCS 77<br>50<br>50µs<br>sf TRAN 8 P| PN |<br>pL 1 DTN 100µs ee& 40<br>200µs<br>30<br>500µs<br>20<br>Se DC iLTIN<br>10<br>CoAT EEE<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V. temperature<br>Recommended use at V GE ≥ 7.5V) ( T vj ≤ 175°C)<br>30.0 45<br>27.5<br>40<br>NY ve<br>25.0<br>SS) 35 ae VGE=20V<br>22.5<br>18V<br>ef 20.0 TNT 30 SY<br>12V<br>im UNE pte<br>17.5<br>ef ooNgim 25 10V Ssal/ |<br>15.0 8V<br>20<br>12.5 7V<br>2 ee: ly<br>6V<br>10.0 15<br>O O<br>5V<br>7.5<br>P NN SRWNInnn<br>10<br>4V<br>5.0<br>5<br>2.5<br>Try :Se<br>py) LK OO<br>0.0 0<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>


8 

IKP15N65H5 High speed switching series fifth generation 

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**----- Start of picture text -----**<br>
45 45<br>Tj=25°C<br>40 / 40 | Tj=150°C<br>PP; yA) EE<br>35 VGE=20V = ee 35 e<br>z 18V — Yi\ =<br>: 30 on aa 30<br>12V<br>a Se ae q<br>em 25 10V fyLY em 25<br>oO oO<br>8V<br>fe) 20 HY as 20 |<br>7V<br>2 ee ey, «a fe)<br>6V<br>: 15 MW 2 15<br>SE 5V Mivi/zaa : /<br>10 NOK— TK 10 /<br>4V<br>y,<br>5 5<br>PSK TT OL<br>PFSa Le——|__—<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>


Figure 5. Typical ( _T_ vj=150°C) 

Figure 6. Typical ( _V_ CE=20V) 

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**----- Start of picture text -----**<br>
2.25 1000<br>IICC=3,8A=7,5A i1| ttd(off)f eeeSa eeee<br>2) IC=15A td(on) es ee<br>2.00 tr<br>Ss e l ee eS<br>Pe ——— — | a eeeee<br>po |te E E<br>sere LL<br>1.75 100<br>phe<br>[a = ao |) uw=se aa =  eea a<br>Re<br>ET ee ee eee<br>1.50<br>E ss] PNET<br>ee eee<br>S as) 1.25 es ep)pee 10 ee eee eee<br>aa5 >; [| [| J; Jf apeee<br>i<br>i<br>1.00<br>aOe<br>0.75 1<br>0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 45<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>


Figure 7. Typical a function ( _V_ GE=15V) 

Figure 8. 

(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=39 Ω , Dynamic test Figure E) 

9 

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**----- Start of picture text -----**<br>
1000 a SS ES ES eS 1000 a a<br>1 t td(off) a he t td(off) a<br>| tf tf<br>td(on) td(on)<br>tr tr<br>| =ee a ee[a aeeeee ee eeee | = |ee eeaee A eeee ee ee e eeeeee<br>aw e e<br>— 100 a a a es se — 100 a ss<br>no a re ee es ee no a es<br>uw= poee ee eee Ge)= esa e e e eeee ee<br>F a ee ee a eeee<br>O a a ee a ee<br>a<br>= aan _ =<br>ep) B s 10 aa eppecc sePe | ep)§- 10 aa(oreeees steocees re Serre=se=ee<br>e a eee Pwa =~ weeea<br>p o a ee<br>a ee ee ee a ee<br>a a<br>ed ee<br>1 1<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>**----- End of picture text -----**<br>


## Figure 9. Typical **resistor** 

_V_ GE =15/0V, Figure E) 

**==> picture [103 x 18] intentionally omitted <==**

**----- Start of picture text -----**<br>
T vj =150°C, V CE=400V,<br>I C<br>**----- End of picture text -----**<br>


Figure 10. 

(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =7,5A, _r_ G=39 ,Dynamic test circuit in Figure E) 

**==> picture [471 x 276] intentionally omitted <==**

**----- Start of picture text -----**<br>
5.5 1.6<br>typ. Eoff<br>min. Eon<br>5.0 max. 1.4 Ets<br>4.5<br>F 7<br>1.2<br>ee yA &<br>a 4.0 e e /<br>i h~ | oNS aN a /<br>1.0<br>3.5 .<br>uwSP KLRd anne<br>x ~N q T \ Ox 0.8 f<br>a 3.0 SN > ~~ Zz /<br>ke ™~ z 0.6 WA<br>iad NN uw 7 7<br>= N r 7<br>= 2.5 = S 5 “oly<br>wi q ~ \I Oo= 0.4 ZZ/ A<br>2.0<br>q ie) / 7 ea<br>\ 0.2 zZ“ee |—<br>1.5 EA<br>1.0 0.0<br>0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 45<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 11. 

Figure 12. 

( _I_ C=0.15mA) 

(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=39 Ω ,Dynamic test Figure E) 

10 

IKP15N65H5 

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**----- Start of picture text -----**<br>
0.35 0.300<br>Eoff Eoff<br>Eon 0.275 Eon<br>Ets Ets<br>0.30<br>| 0.250<br>> eT<br>a 0.225 Pf ff “7<br>Lu 0.25 oa Lu “7<br>7p)o -ca 9)o 0.200 => ao<br>pan a - pan 7<br>> 0.20 a =< > 0.175 = =<br>WwZa -— Ww 0.150 — _<br>0.15 0.125<br>L<br>S) 7 S)L 0.100<br>0.10<br>= 0.075<br>°<br>ja] 0.050 |<br>0.05<br>0.025<br>0.00 0.000<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =7,5A, Dynamic test circuit in I C =7,5A, r G=39 ,Dynamic test circuit in<br>Figure E) Figure E)<br>0.300 16<br>Eoff 130V<br>0.275 Eon 520V<br>Ets 14<br>0.250<br>Z ee ee ee 7<br>= | J /<br>0.225 12<br>(0n “ - imS / /<br>0.200<br>Gof “ Q 10 /<br>ee<br>>= 0.175 7 “ a | 5> /As<br>x 0.150 “oO L=- <a Ww 8 Z<br>lu oe Za =<br>0.125<br>6<br>0.100<br>= AO E /<br>0.075 4<br>3 ee<br>ee<br>0.050<br>2<br>0.025<br>aT tT | |<br>0.000 0<br>200 250 300 350 400 450 500 0 5 10 15 20 25 30 35 40<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>E E<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>


Figure 15. 

Figure 16. Typical ( _I_ C=15A) 

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**----- Start of picture text -----**<br>
T vj =150°C, V GE=15/0V,<br>**----- End of picture text -----**<br>


_I_ C =7,5A, _r_ G=39 Figure E) 

11 

IKP15N65H5 High speed switching series fifth generation 

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**----- Start of picture text -----**<br>
o Ciss o BNA<br>Coss — HW<br>Crss a ea Tl<br>Sa (Te<br>1000<br>1 ty SN eT A<br>ee== [T] =alll D=0.5 Mil<br>po 8 Ss 0.2 ae<br>0.1<br>ee a co Al Haat<br>rotee |enAaie 0.05 ia<br>a 2 100 \aees a | 0.02<br>E oS WE wig pp 0.01<br>single pulse<br>gz fs a Pewieani Baynea! gi!<br>a. ee ee ee ee 0.1 rr LA Lert Lee Li<br>6 foo | |pas] § eee<br>~ 10 Ww‘ Zzuw YTAAAVA tt eT ATT TT<br>2 O r<br>————————— TT A i<br>aesJ __—____________es esenees fOS Bill040TM U 11001 a0 T LMM 0LINE010ge TTT<br>i: 1 2 3 4<br>ri[K/W]: 0.3389743 0.8017237 0.7055106 0.3537915<br>τ i[s]: 2.2E-5 3.2E-4 3.0E-3 0.02235159<br>1 e eeeee 0.01 | I mM TT TT TT T<br>0 5 10 15 20 25 30 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal resistance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>90<br>Tj=25°C, IF = 7.5A<br>0 [= Tj=150°C, IF = 7.5A 7]<br>. feed =f<br>SCs 1 UU UI 80 [Sr] |<br>9 Hit D=0.5<br>x tt. 0.2 | 2 ~<br>£ PT TeAAT 0.1 Ww 70 ~N<br>TCAs<br>2 Ec 0.05 TC ey [OP<br>: ETM |} et<br>0.1 0.02<br>a9ft 0 0.01 MMI i 60 rT=<br>uwz= |eemi A | single pulse ntTT111 re7deee PNN Tf ft<br>b SO Eee eT! Y 50 PF TN] ff<br>a 0.01 0 A | So<br>2 a | Ry Ro cn) WW ——™~<br>< erent emt eat eee! -- = ae<br>FAH7HHH i eee eee<br>40<br>2 IL, vers Co=te/Re Ill |<br>i: 1 2 3 4 ry]<br>ri[K/W]: 0.4457406 0.911159 0.9864113 0.5566891<br>| τ i[s]: 1.9E-5 2.4E-4 2.3E-3 0.02112308 Pf do<br>0.001 le | 30 Pot | | tt<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 600 800 1000 1200 1400 1600 1800 2000<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>C<br>c)th(j-<br>Z<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>


Figure 19. Diode function ( _D_ = _t_ p/T) 

Figure 20. 

( _V_ R=400V) 

12 

IKP15N65H5 

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**----- Start of picture text -----**<br>
0.50 17.5<br>Tj=25°C, IF = 7.5A Tj=25°C, IF = 7.5A<br>0.45 a Tj=150°C, IF = 7.5A e Tj=150°C, IF = 7.5A e<br>e e  |<br>ee 0.40 ee a 15.0<br>Ww Kk<br>BP e e<br>& 0.35 & 7<br>eeO>ee> 0.300.25 oO>> 12.5 eeeeea Z |<br>WwW<br>aef 0.20 |Td| SE——— Ww 10.0 Zz oa<br>eee eee<br>0.15<br>itiy or7p) LO a<br>a ffa Zo4<br>0.10 7.5<br>ERR Cees<br>0.05<br>0.00 5.0<br>600 800 1000 1200 1400 1600 1800 2000 600 800 1000 1200 1400 1600 1800 2000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery charge as a Figure 22. Typical reverse recovery current as a<br>function of diode current slope function of diode current slope<br>( V R=400V) ( V R=400V)<br>0 27<br>Tj=25°C, IF = 7.5A Tj=25°C<br>Tj=150°C, IF = 7.5A Tj=150°C<br>24<br>-50 a ee ee ee ee<br>a<br>21<br>-100<br>~=<<br>18<br>= -150 WW<br>e£ a ~ ow<br>15<br>ef oN |S |<br>© -200 ™~N<br>12<br>™~<br>(0) -250<br>9<br>ne} .<br>-300<br>Bf LNB pa<br>6<br>-350<br>ee 3<br>-400 0<br>600 800 1000 1200 1400 1600 1800 2000 0.0 0.5 1.0 1.5 2.0 2.5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>Q rr I rr<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>


Figure 23. 

Figure 24. 

( _V_ R=400V) 

13 

IKP15N65H5 

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2.0<br>IF=4,5A<br>IF=9A<br>IF=18A<br>p e<br>1.8 e<br>eeLu 1.6 e e<br>xt<br>Kkee<br>I<br>><br>aeQ 1.4 eee<br>m4<br>Se fe<br>=<br>° 1.2 = |<br>ee ee<br>pe<br>1.0<br>0.8<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>


Figure 25. 

14 

IKP15N65H5 

High�speed�switching�series�fifth�generation 

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## **Package Drawing PG-TO220-3** 

15 

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IKP15N65H5 

High�speed�switching�series�fifth�generation 

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## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>


Figure C. **Definition of diode switching characteristics** 

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t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

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IKP15N65H5 

## IKP15N65H5 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2012-11-09|Preliminarydata sheet|
|1.2|2013-12-18|New MarkingPattern|
|2.1|2015-05-05|Final data sheet|



## **Information** 

## **Warnings** 

endangered. 

17 



## Links

- [View this product on Novapart](https://novapart.co/products/IKP15N65H5XKSA1/igbt-15-a-165-v-105-w-650-to-220-3-pins)
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- [Supplier page](https://es.farnell.com/infineon/ikp15n65h5xksa1/igbt-650v-15a-to220-3/dp/2363289)
---

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