# IGBT, 8 A, 1.6 V, 70 W, 650 V, TO-220, 3 Pins

![Product image](https://novapart.co/image/farnell:2363285/)

**URL**: https://novapart.co/products/IKP08N65F5XKSA1/igbt-8-a-16-v-70-w-650-to-220-3-pins
**SKU**: IKP08N65F5XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.6460
**Stock**: 10+

## Description

DC Collector Current:8A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:70W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No. of Pins:3Pins; Ope

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 |
| Power Dissipation | 70W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-220 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 8A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2363285/)

## IGBT 

High speed 5 FAST IGBT in TRENCHSTOP _ TM 5 technology copacked with RAPID 1 

## IKP08N65F5 

IKP08N65F5 

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**----- Start of picture text -----**<br>
High speed 5 FAST IGBT in TRENCHSTOP_ TM 5 technology copacked with<br>RAPID 1 fast and soft anti parallel diode<br>Features and Benefits: C<br>High speed F5 technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ 650V breakdown voltage<br>G<br>«Low Q g E<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C C<br>* Qualified according to JEDEC for target applications :<br>¢ Pb-free lead plating; ROHS compliant 4<br>*« Complete product spectrum and PSpice Models: © Safi, 7<br>http://www.infineon.com/igbt/ iG. 7Oza_.%<br>Applications:<br>¢ Solar converters A A fr<br>* Uninterruptible power supplies Ls<br>* Welding converters G C “#<br>E<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKP08N65F5|650V|8A|1.6V|175°C|K08F655|PG-TO220-3|



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## High�speed�switching�series�fifth�generation 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 

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## High�speed�switching�series�fifth�generation 

## **Maximum�ratings** 

|**Maximumratings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emitter voltage|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||18.0<br>11.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||24.0|A|
|Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||24.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||20.0<br>12.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||24.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||70.0<br>31.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6 mm(0.063 in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|



## **Thermal�Resistance** 

|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||2.20|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||2.90|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||62|K/W|



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## High�speed�switching�series�fifth�generation 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=8.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.80<br>1.90|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=9.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.08mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>4000.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=8.0A|-|17.0|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|500|-|pF|
|Output capacitance|_C_oes||-|16|-||
|Reverse transfer capacitance|_C_res||-|3|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=8.0A,<br>_V_GE=15V|-|22.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=4.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=48.0Ω,_L_σ=30nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|10|-|ns|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|116|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.07|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.09|-|mJ|



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## High�speed�switching�series�fifth�generation 

|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=48.0Ω,_L_σ=30nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|9|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|3|-|ns|
|Turn-off delaytime|_t_d(off)||-|129|-|ns|
|Fall time|_t_f||-|35|-|ns|
|Turn-on energy|_E_on||-|0.04|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.06|-|mJ|



## **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** 

|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=4.0A,<br>_di_F_/dt_=800A/µs|-|41|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.14|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|6.6|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-160|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=800A/µs|-|27|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.10|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|6.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-300|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=4.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=48.0Ω,_L_σ=30nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|9|-|ns|
|Rise time|_t_r||-|6|-|ns|
|Turn-off delaytime|_t_d(off)||-|145|-|ns|
|Fall time|_t_f||-|18|-|ns|
|Turn-on energy|_E_on||-|0.10|-|mJ|
|Turn-off energy|_E_off||-|0.03|-|mJ|
|Total switchingenergy|_E_ts||-|0.13|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=48.0Ω,_L_σ=30nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|9|-|ns|
|Rise time|_t_r||-|4|-|ns|
|Turn-off delaytime|_t_d(off)||-|165|-|ns|
|Fall time|_t_f||-|25|-|ns|
|Turn-on energy|_E_on||-|0.06|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.08|-|mJ|



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## High�speed�switching�series�fifth�generation 

**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=4.0A,<br>_di_F_/dt_=800A/µs|-|56|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.27|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-134|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=800A/µs|-|42|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.19|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.4|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-240|-|A/µs|



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7 

## IKP08N65F5 High speed switching series fifth generation 

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**----- Start of picture text -----**<br>
a ee || 80<br>70<br>ANS RAAT HT<br>10<br>PFE ae<br>= YS se 60<br>x a eee eee = N<br>E eeee<br>ra ee ee | 5 50<br>2 || tp=1µs a E XI<br>10µs 40<br>S eT MM § 7] KL<br>50µs<br>BTS 1 TTA :<br>: NI g 30 X<br>OQ3 aRSS 100µs 0 ee ee<br>oO PTTHOTT 200µs eS TT o- 20 Pt | JN\ |<br>fo || \<br>500µs<br>a DC ance || \<br>PTI ISP 10<br>0.1 0<br>1 TTI 10 100 TEM 1000 = 25 PN 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V. temperature<br>Recommended use at V GE ≥ 7.5V) ( T vj ≤ 175°C)<br>18 24<br>16 21 VGE=20V<br>18V<br>14 .<br>_ 18<br>12V<br>ae 12 eeNe_ 10V = /<br>iad w 15 7<br>8V<br>10<br>PL NUE PS 7V<br>12<br>8 6V<br>O<br>pf NOs Pa ee<br>O1 b1 9 LNW 5V Gan aoa<br>6<br>:: Ke: LAW\\ UY<br>6<br>4 \ ie<br>)<br>KN<br>2 3 Win \<br>0 0<br>P| it | tt ) D FIXAS<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>


Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C) 

Figure 4. Typical ( _T_ vj=25°C) 

8 

High speed switching series fifth generation IKP08N65F5 

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**----- Start of picture text -----**<br>
24 24<br>Tj=25°C<br>Tj=150°C<br>21 VGE=20V 21<br>18V<br>18 18<br>zx 12V 7Ty IY).4: x L g<br>: 10V<br>in 15 ——sff / Z| it 15 s|<br>8V<br>8© 12 7V —| AYJ y / 8© 12 ‘|<br>6V<br>nyi 9 5V STKeeei 9 ee<br>3 NOW 3<br>© NX ©<br>6 6<br>fog] Liye<br>3 3<br>LeeeAN |<br>0 ee ee e e 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4 5 6 7 8 9<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>


Figure 5. Typical ( _T_ vj=150°C) 

Figure 6. Typical ( _V_ CE=20V) 

**==> picture [471 x 276] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.00<br>IC=2A<br>IC=4A<br>IC=8A<br>:Q 1.75 Eee 100 Poe |<br>td(off)<br>E e H tf —<br>e e 1 td(on) a<br>5 | | Ee FSS<br>tr RA<br>pe OD I a ee ee ee<br>1.50<br>a i Da eeee<br>BP ey P S<br>aOp 1.25 fete Oi 10 |a es eke Danksbetee het<br>in 2) a a ee ee ee eee<br>4 ——— — - a a eeee ee<br>1.00<br>0.75 1<br>0 25 50 75 100 125 150 175 0 3 6 9 12 15 18 21 24<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>


Figure 7. Typical a function ( _V_ GE=15V) 

Figure 8. 

(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=48 Ω , Dynamic test Figure E) 

9 

~~High speed switching series fifth generation~~ IKP08N65F5 

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**----- Start of picture text -----**<br>
td(off)<br>tf<br>td(on)<br>tr<br>100 E| J Te} 100 LE—r<br>r ar H td(off) 2<br>a tf<br>oy ee ee eee | td(on) a ee ee ee eee<br>tr<br>= e a eeyee = I aee ee ee ee<br>i | of | UT i Da ee ee<br>oOes {|p|| | ye Le<br>Zz ZzoO<br>i 10 a es ee i 10 a s s<br>>= poacleee > a s s ee<br>2) pee ee —Ree 2) a a ars mies ee eee<br>- a ee ee ee ee ee - a<br>a ae a ee ee<br>Pot ee ee ee ee ee ee<br>Poe} | tT Tt a<br>7<br>1 1<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =4A,Dynamic test circuit in I C =4A, r G=48 ,Dynamic test circuit in Figure<br>Figure E) E)<br>5.5 0.8<br>typ. Eoff<br>min. Eon<br>>| 5.0 F max. L | 0.7 (Fe Ets<br>A 4.5 = af<br>0.6<br>e e °<br>4.0<br>0.5<br>3.5<br>0.4<br>3.0<br>BE PLT PAT OS 8 op<br>i ~ . > 0.3 a , 7<br>2.5<br>ui i |= 0.2 “ “ —<br>2.0 .<br>Bf SLUNG to =<br>0.1<br>1.5 ee<br>1.0 0.0<br>PT [ey)] : | Le . | | |<br>0 25 50 75 100 125 150 175 0 3 6 9 12 15 18 21 24<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t t<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 11. Gate-emitter of junction ( _I_ C=0.08mA) 

Figure 12. 

(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=48 Ω ,Dynamic test Figure E) 

10 

IKP08N65F5 

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**----- Start of picture text -----**<br>
0.200 0.200<br>Eoff Eoff<br>Eon Eon<br>0.175 Ets 0.175 Ets<br>oy oy<br>0.150 0.150<br>Ww Ww<br>7) 7)<br>o o<br>e) 0.125 e) 0.125<br>—! —!<br>O ad eect O - eo<br>or or wen cede<br>Ww 0.100 = Ww 0.100 ape =<br>Z La Z wee ere<br>Ww ueT Ww -" cee yy<br>Z 0.075 < 0.075<br>OO<br>EE<br>= 0.050 = 0.050<br>n n<br>0.025 et Tt tt 0.025 a<br>0.000 0.000<br>elit ity } Ee]<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =4A, Dynamic test circuit in I C =4A, r G=48 ,Dynamic test circuit in Figure<br>Figure E) E)<br>0.200 16<br>130V<br>520V<br>0.175 14<br>See  ee ee<br>a xan /<br>g Eoff S Li<br>0.150 12<br>Eon<br>Ets<br>ep)n <° / J /<br>e) 0.125 a 10<br>aa ue fe) a<br>><br>r<br>o Ww 0.100 > - imi 8 /<br>uwoO aeoo - : == ay ‘ ,<br>Zz 0.075 -ae - aa Wwuy 6 on ma<br>O aa <x<br>E= 0.050 we - nas )- 4 |<br>0.025 2<br>0.000 0<br>200 250 300 350 400 450 500 0.0 5.0 10.0 15.0 20.0 25.0<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>E E<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>


Figure 15. 

Figure 16. Typical ( _I_ C=8A) 

_T_ vj =150°C, _V_ GE=15/0V, 

_I_ C =4A, _r_ G=48 E) 

11 

~~High speed switching series fifth generation~~ IKP08N65F5 

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1000<br>Ciss<br>———=—————— TYE ATT TT TTI<br>C os s<br>Be N Crss a a co 1 aT |<br>Zz i i D=0.5 |<br><x 7, 0.2 a<br>eit) 100 = PTT 7 TTT 0.1 A||<br>LL | |) eee 0.05<br>Lu a tfpo Mt La<br>0.02<br>So RRSese ee i<br>0.01<br>e fom Wwél UeLf single pulse<br>a 0.1 ee ill<br>O = YA | | |<br>a 10 ro]——_——Pes >=2 SeLETT TT<br>———ee ee [en2) CI TT ee dl<br>ee ee 77 al<br>pSeee TIETT TIL) SHE HE<br>a ee eee I| IITA ital<br>i:    1    2    3    4<br>ri[K/W]:   0.3389743   0.8017237   0.7055106   0.3537915<br>τ i[s]:    2.2E-5    3.2E-4    3.0E-3    0.02235159<br>SO || |<br>1 0.01<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal resistance<br>collector-emitter voltage ( D = t p/T)<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>


( _V_ GE 

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ues” 1 00<br>> TE a 27 4 D=0.5 1<br>0.2<br>x PTT TC 7A CUM TT<br>re ate 2 a 0.1<br>| IA a 0.05<br>: 0.1 Wi 0.02 UHI<br>Se 0.01<br>wu= |miee A | single pulse ntCT111<br>b SO Eee eT!<br>SACI I N| Ta)<br>2 0.01 a | Ry Ro cn)<br>BL et tt --f}<br>fl}<br>a PZT— +} eti/Rs Co=to/Re iIll<br>ua a A<br>i:    1    2    3    4<br>ri[K/W]:   0.4457406   0.911159   0.9864113   0.5566891<br>| τ i[s]:    1.9E-5    2.4E-4    2.3E-3    0.02112308<br>0.001 ll<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s]<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>


Figure 19. Diode function ( _D_ = _t_ p/T) 

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70 -—___—_+ 1<br>Tj=25°C, IF = 4A<br>65 Tj=150°C, IF = 4A<br>60<br>5,<br>Ww 55 PPL) fp yy fd<br>3 =<br>Co<br>50<br>8 Se“To<br>45<br>reweeeD 4035 aePTTwa|TP TNRT<br>WW Pr]<br>30<br>2520 Py LE ELE<br>600 700 800 900 1000 1100 1200 1300 1400 1500 1600<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br>


Figure 20. Typical of diode ( _V_ R=400V) 

12 

IKP08N65F5 

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0.35 14<br>Tj=25°C, IF = 4A Tj=25°C, IF = 4A<br>( Tj=150°C, I e F = 4A e 13 Tj=150°C, IF = 4A<br>| ee<br>e 0.30 LI T T TTT Tt}. 12 LE TT<br>,<br>Ww Kk /<br>inap {ii lele-Pry iage 11 EL]Te<br><x Ye y<br>x= 5 ,<br>s PTT<br>0.25 10<br>tt te Ps EL<br>>BtWi Wi Ee‘ e n<br>O > 9 -<br>orBf 0.20 5 8 Le7<br>WwW Y - L |<br>imBB 7 eeP<br>2 i aaa ji<br>ot 0.15 i 6<br>uw titi ttt itty fprty ttt<br>5<br>rrr rriT yy)x o-reTT<br>0.10 4<br>600 700 800 900 1000 1100 1200 1300 1400 1500 1600 600 700 800 900 1000 1100 1200 1300 1400 1500 1600<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rr<br>**----- End of picture text -----**<br>


Figure 21. Typical function ( _V_ R=400V) 

Figure 22. Typical function ( _V_ R=400V) 

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0 27<br>Tj=25°C, IF = 4A Tj=25°C<br>Tj=150°C, IF = 4A Tj=150°C<br>24<br>-50 es | ee ee ee<br>a 21<br>-100<br>6 18<br>-150<br>3 Stl | fp pd Pa<br>SOS a 15<br>— -200 SN<br>12<br>$ <<<br>E SO :<br>® -250<br>9<br>-300<br>6<br>-350<br>3<br>-400 0<br>600 700 800 900 1000 1100 1200 1300 1400 1500 1600 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>


Figure 23. 

Figure 24. 

( _V_ R=400V) 

13 

IKP08N65F5 

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2.0<br>IF=4,5A<br>IF=9A<br>IF=18A<br>pe<br>1.8<br>po E T<br>eeLu 1.6 e e<br>xt<br>Kkee<br>I<br>><br>Qie 1.4 ee eee<br>m4<br>Se fe<br>=<br>° 1.2 = |<br>ee ee<br>pe<br>1.0<br>0.8<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>


Figure 25. 

14 

IKP08N65F5 

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High�speed�switching�series�fifth�generation 

## PG-TO220-3 

15 

Rev.�1.1,��2012-11-09 

IKP08N65F5 

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High�speed�switching�series�fifth�generation 

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a b<br>a b<br>**----- End of picture text -----**<br>


t 

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16 

Rev.�1.1,��2012-11-09 

IKP08N65F5 

## IKP08N65F5 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2012-11-09|Preliminarydata sheet|



## **Information** 

## **Warnings** 

endangered. 

17 



## Links

- [View this product on Novapart](https://novapart.co/products/IKP08N65F5XKSA1/igbt-8-a-16-v-70-w-650-to-220-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ikp08n65f5xksa1/igbt-650v-8a-to220-3/dp/2363285)
---

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