# IGBT, 28 A, 2 V, 115.4 W, 600 V, TO-252 (DPAK), 3 Pins

![Product image](https://novapart.co/image/farnell:3648094RL/)

**URL**: https://novapart.co/products/IKD15N60RC2ATMA1/igbt-28-a-2-v-1154-w-600-to-252-dpak-3-pins
**SKU**: IKD15N60RC2ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.4340
**Stock**: 500+
**Lead Time**: 141 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP RC |
| Power Dissipation | 115.4W |
| Transistor Mounting | Surface Mount |
| Dc Collector Current | 28A |
| Power Dissipation Pd | 115.4W |
| Transistor Case Style | TO-252 (DPAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 28A |
| Collector Emitter Voltage Max | 600V |
| Automotive Qualification Standard | - |
| Collector Emitter Voltage V(Br)Ceo | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Saturation Voltage Vce(On) | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3648094RL/)

IKD15N60RC2 

## TRENCHSTOP[TM] 

## **Features:** 

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TRENCHSTOP [TM]<br>**----- End of picture text -----**<br>


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http://www.infineon.com/rc-d2<br>**----- End of picture text -----**<br>


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|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKD15N60RC2|600V|15A|2V|175°C|K15DRC2|PG-TO252-3|



Datasheet www.infineon.com 

2020-09-28 

IKD15N60RC2 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||28.0<br>18.6|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||45.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||45.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||12.5<br>6.6|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||45.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±25|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||3|µs|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||115.4<br>57.7|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,1)<br>junction - case|_R_th(j-c)||-|-|1.30|K/W|
|Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|5.00|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|75|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|50|K/W|



1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=15.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.00<br>2.40|2.30<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=15.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.90<br>1.95|2.20<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.16mA,_V_CE=_V_GE|4.3|5.0|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|25<br>2500|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=15.0A|-|6.0|-|S|
|Integratedgate resistor|_r_G|||none||Ω|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=1000kHz|-|575|-|pF|
|Output capacitance|_C_oes||-|28|-||
|Reverse transfer capacitance|_C_res||-|21|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=15.0A,<br>_V_GE=15V|-|72.0|-|nC|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=49.0Ω,_R_G(off)=49.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|18|-|ns|
|Turn-off delaytime|_t_d(off)||-|374|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.57|-|mJ|
|Turn-off energy|_E_off||-|0.35|-|mJ|
|Total switchingenergy|_E_ts||-|0.92|-|mJ|



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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** 

|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=787A/µs|-|129|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.50|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|11.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-93|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=49.0Ω,_R_G(off)=49.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|16|-|ns|
|Rise time|_t_r||-|19|-|ns|
|Turn-off delaytime|_t_d(off)||-|393|-|ns|
|Fall time|_t_f||-|21|-|ns|
|Turn-on energy|_E_on||-|0.77|-|mJ|
|Turn-off energy|_E_off||-|0.39|-|mJ|
|Total switchingenergy|_E_ts||-|1.16|-|mJ|



**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=761A/µs|-|199|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.04|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|15.3|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-97|-|A/µs|



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## ~~RG~~ TRENCHSTOP[TM] Series forhard switching applications ~~tt”~~ 

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120 30<br>100 25<br>SILL NOT<br>XO<br>80 iP 20 NO<br>: \<br>PENSE 60 15<br>: Soeean<br>40 10<br>20 5<br>POPP) PeerN<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>45 45<br>VGE=20V VGE=20V<br>40 17V 40 17V<br>15V 15V<br>35 =~ /- 35 PN OW,<br>13V Sy 13V ES<br>11V 11V<br>30 30<br>9V 9V<br>25 7V 25 7V<br>20 20<br>15 15<br>10 10<br>5 5<br>ny Nee Aan<br>0 a  ae e 0 e  Ae<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>


Figure 3. Typical ( _T_ vj=25°C) 

Figure 4. Typical ( _T_ vj=175°C) 

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## TRENCHSTOP[TM] 

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45 4.5<br>Tj=25°C IC=7,5A<br>Tj=175°C IC=15A<br>40 [| / 4.0 | IC=30A |<br>/ =<br>/z ue<br>35 / o) 3.5 --<br>_x= bsEe veo<br>30 3.0<br>Pa |<br>im <x<br>5 25 | i 2.5<br>oO / =<br>20 2.0<br>. ti<br>ro} 15 oOad 1.5 affSn A |<br>(e)<br>10 1.0<br>5 0.5<br>0 0.0<br>2 4 6 8 10 12 14 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>


Figure 5. Typical ( _V_ CE=20V) 

Figure 6. Typical a function ( _V_ GE=15V) 

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## TRENCHSTOP[TM] 

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1000 7<br>[ep<br>aa typ.<br>aa es ee ee _<br>6<br>a ee ee eee ra}<br>f td(off) o Kk<br>ttfd(on) 1e) 5<br>iF 100 | tr a es es Q<br>ip) {o r i<br>im p a o (e)<br>= a oO 4<br>- a Wy<br>OQ ae ee<br><= -<br>a ee a ee ee ee 3<br>pe<br>=La<br>2)7 10 a eS =<br>poaaa Ww 2<br>aa ee se x<br>eseo)<br>1<br>fs<br>1 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 9. 

(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =15A, _R_ G=49 , Dynamic test circuit Figure E) 

Figure 10. 

( _I_ C=0.16mA) 

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## TRENCHSTOP[TM] 

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1.2<br>Eoff<br>Eon<br>Ets<br>oy 1.0 L<br>£&<br>uw<br>ip)op) 0.8<br>pa) _—<br>8 on mee ——<br>a —__<br>0.6<br>io<br>Z<br>Ir<br>0.4<br>0.2<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>E<br>**----- End of picture text -----**<br>


Figure 13. 

(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =15A, _R_ G=49 , Dynamic test circuit Figure E) 

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Figure 14. 

(inductive load, _T_ vj =175°C, _V_ GE=15/0V, _I_ C =15A, _R_ G=49 , Dynamic test circuit Figure E) 

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16 P|<br>— V CC =120V , Cies<br>14 —- V CC =480v / 1000 CCoesres<br>a| Co e e<br>/ / a ee ee ee<br>= / / A<br>im2 12 é a eeee<br><F 10 folaws 2ro ai ee<br>WW<br>iw<br>6 8 |i z fl<br>E= S)jal 100 esa<br>WwW =< a<br>uw 6 o) A Sa es ee<br>ES - A eeee<br>BE Eee<br>4<br>. PINS<br>2<br>0 10<br>0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


Figure 15. Typical ( _I_ C=15A) 

Figure 16. 

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## TRENCHSTOP[TM] 

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160<br>1<br>xCo 140 TT) ).) J.  GUUS pt ee<br>-_ = a i<br>pa QZ =e ee<br>WWx Wwx pTee A4 D=0.5 Baill<br>oc 120 4 SZz Reaew Al 0.2 Baill<br>5 < |,”— an /A ||<br>0.1<br>x y 2 0.1 pa To 0.05 | |||<br>LuoO 100 4 ttng mmmeeoe 0.02<br>_ 7 _ pt ee<br>aO xS —Peeee/ A 0.01 PTBaill<br>single pulse<br>° i” 7 Zen eal ail<br>80<br>5 Wi a eee lll<br>: F mm Zael<br>6 EATMT<br>0.01<br>© 60 TI<br>bY Fa yy, uwZz TALEPt tt PLLUII tA ain<br>S PT tH]<br>DH a¢ 8 ARE> A ee ee GHG|  i<br>40<br>° PARE<br>i: 1 2 3 4 5<br>ri[K/W]: 0.25012 0.88582 0.118768 0.0115115 7.0E-4<br>τ i[s]: 2.0E-4 9.2E-4 5.0E-3 0.1707067 4.115216<br>20 Py yy yy 0.001 | 7 ny<br>12 13 14 15 16 17 18 1E-6 1E-5 1E-4 0.001 0.01<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical short circuit collector current as a Figure 18. IGBT transient thermal resistance<br>function of gate-emitter voltage ( D = t p/T)<br>( V CE 400V, T vj=25°C)<br>10 300<br>a _—___|__<br>PT a TT TTT Tj=25°C, IF = 15A<br>| Tj=175°C, IF = 15A<br>= a<br>ag | | 250 nn<br>ca<br>D=0.5<br>gs CorT 0.2 He IN<br>a =a 1 eee”nM= 0.1 |YTTT iii >i= 200<br>0.05<br>Ww aee/a Coo ra,r \ \<br>4 rt AA ee | 0.02 Ball nT<br>x Pt Ae eet 0.01 LT 6S N<br>150<br>2BT |erearthet single pulse IT 68|e . = ~<br>5a 0.1 Lew eeleenf 100 LINNX “r ><br>2 Ae Roi 6<br>FEs PT|TT | —— [i]il - oS<br>50<br>nail ti i<br>i: 1 2 3 4 5<br>ri[K/W]: 0.30342 3.7726 1.04741 0.052065 1.3E-3<br>τ i[s]: 6.3E-5 3.5E-4 2.0E-3 0.06101217 4.420898<br>0.01 0<br>1E-6 1E-5 1E-4 0.001 0.01 500 750 1000 1250 1500 1750 2000 2250 2500<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 19. Diode transient thermal impedance as a Figure 20. Typical reverse recovery time as a function<br>I C(SC) Z c)th(j-<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
( D = t p/T)<br>**----- End of picture text -----**<br>


( _V_ R=400V) 

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IKD15N60RC2 

## TRENCHSTOP[TM] 

**==> picture [476 x 285] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.6 35<br>Tj=25°C, IF = 15A Tj=25°C, IF = 15A<br>Tj=175°C, IF = 15A Tj=175°C, IF = 15A<br>1.4<br>30<br>Oo Pa 7 7<br>1.2<br>Lu = 5 7<br>2 -- a 25<br>1.0<br>S>or = or:> 20 7 vad 4CO7 Aa<br>0.8 fe) 7<br>fo) a<br>15<br>7p) 0.6 —<br>a‘ | “pa<br>te te YD<br>10<br>2 am uwBL<br>0.4<br>5<br>0.2 Pitt tL | de EEE EEE<br>0.0 0<br>500 750 1000 1250 1500 1750 2000 2250 2500 500 750 1000 1250 1500 1750 2000 2250 2500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rr<br>**----- End of picture text -----**<br>


Figure 21. 

( _V_ R=400V) 

Figure 22. 

( _V_ R=400V) 

**==> picture [488 x 285] intentionally omitted <==**

**----- Start of picture text -----**<br>
0 50<br>Tj=25°C, IF = 15A Tj=25°C<br>-50 Pi Tj=175°C, IF = 15A e 45 Tj=175°C<br>/<br>\ | Ef<br>\ /<br>-100 40<br>a<br>a1 \<br>-150 35<br>NX J tit,_ Ei [te] /<br>cesOo -200 ee 30<br>ef£ oN Oa [a)]<br>© -250 \Q 25<br>x<br>a -300 20<br>eeoNee ee ee<br>g \ ow /<br>ne} -350 \ e> 15 /;<br>NN\<br>-400 10<br>et}: 7<br>-450 5<br>tt INS) Ep [Ev]<br>-500 EERE 0 ee—— Ae<br>500 750 1000 1250 1500 1750 2000 2250 2500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>


Figure 23. 

Figure 24. 

( _V_ R=400V) 

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IKD15N60RC2 

## TRENCHSTOP[TM] 

**==> picture [233 x 286] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.5<br>IF=7,5A<br>IF=15A<br>IF=30A<br>3.0<br>2.5<br>Oo<br><x<br>Kk<br>i 2.0<br>><br>Q<br>a<br><x<br>1.5<br>[a<br>e)<br>LL<br>1.0<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>


Figure 25. 

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**==> picture [86 x 38] intentionally omitted <==**

## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## Package Drawing PG-TO252-3 

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**----- Start of picture text -----**<br>
MILLIMETERS<br>DIM<br>MIN MAX<br>A 2.16 2.41<br>A1 0.00 0.15<br>b 0.64 0.89<br>b2 0.65 1.15<br>b3 4,95 5.50<br>c 0.46 0.61<br>c2 0.40 0.98<br>D 5.97 6.22<br>D1 5.02 5.84<br>E 6.35 6.73<br>E1 4.32 5.21<br>e 2.29 (BSC)<br>e1 4.57 (BSC)<br>N 3<br>H 9.40 10.48<br>L 1.18 1.78<br>L3 0.89 1.27<br>L4 0.51 1.02<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
DOCUMENT NO.<br>Z8B00003328<br>SCALE 0<br>2.5<br>0 2.5<br>5mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>05-02-2016<br>REVISION<br>06<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Revision�History** 

IKD15N60RC2 

## **Revision:�2020-09-28,�Rev.�2.1** 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2020-09-28|Final data sheet|



15 

V�2.1 2020-09-28 

Datasheet 

## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/IKD15N60RC2ATMA1/igbt-28-a-2-v-1154-w-600-to-252-dpak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ikd15n60rc2atma1/igbt-600v-28a-115-4w-to-252/dp/3648094RL)
---

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