# IGBT, 30 A, 1.65 V, 250 W, 600 V, TO-252 (DPAK), 3 Pins

![Product image](https://novapart.co/image/farnell:3294650RL/)

**URL**: https://novapart.co/products/IKD15N60RATMA1/igbt-30-a-165-v-250-w-600-to-252-dpak-3-pins
**SKU**: IKD15N60RATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.5540
**Stock**: 1000+
**Lead Time**: 141 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP RC |
| Power Dissipation | 250W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-252 (DPAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 30A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.65V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3294650RL/)

## IGBT 

## IKD15N60R 

TM 

IKD15N60R 

## TRENCHSTOP[TM] 

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Features:<br>TRENCHSTOP [TM] Reverse Conducting (RC)<br>applications offering<br>¢ Optimised V CEsat and V_ F for low conduction losses<br>* Smooth switching performance leading to low EMI<br>* Very tight parameter distribution<br>¢ Operating range of 1 to 20kHz<br>* Maximum junction temperature 175°C<br>¢ Short circuit capability of 5us<br>¢ Best in class current versus package size<br>* Qualified according to JEDEC for target<br>¢ Pb-free lead plating; ROHS compliant (for<br>temperature 260°C, MSL1)<br>* Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>Applications:<br>* Consumer motor drives<br>**----- End of picture text -----**<br>


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|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKD15N60R|600V|15A|1.65V|175°C|K15R60|PG-TO252-3|



Datasheet www.infineon.com 

2014-03-12 

IKD15N60R 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||30.0<br>15.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||45.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||45.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||30.0<br>15.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||45.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_c=25°C|_P_tot||250.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,1)<br>junction - case|_R_th(j-c)||-|-|0.60|K/W|
|Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|2.00|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|75|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|50|K/W|



1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=15.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.65<br>1.85|2.10<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=15.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.70<br>1.70|2.10<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.25mA,_V_CE=_V_GE|4.3|5.0|5.7|V|
|Zero gate voltage collector current1)|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>1000|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=15.0A|-|9.4|-|S|
|Integratedgate resistor|_r_G|||none||Ω|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|961|-|pF|
|Output capacitance|_C_oes||-|53|-||
|Reverse transfer capacitance|_C_res||-|33|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=15.0A,<br>_V_GE=15V|-|90.0|-|nC|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=25°C|-|112|-|A|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=60nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E|-|16|-|ns|
|Rise time|_t_r||-|10|-|ns|
|Turn-off delaytime|_t_d(off)||-|183|-|ns|
|Fall time|_t_f||-|136|-|ns|
|Turn-on energy|_E_on||-|0.37|-|mJ|
|Turn-off energy|_E_off||-|0.53|-|mJ|
|Total switchingenergy|_E_ts||-|0.90|-|mJ|



1) Not subject to production test - verified by design/characterization 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** 

|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=1300A/µs|-|110|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.76|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|20.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1640|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=60nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E|-|15|-|ns|
|Rise time|_t_r||-|11|-|ns|
|Turn-off delaytime|_t_d(off)||-|212|-|ns|
|Fall time|_t_f||-|218|-|ns|
|Turn-on energy|_E_on||-|0.41|-|mJ|
|Turn-off energy|_E_off||-|0.84|-|mJ|
|Total switchingenergy|_E_ts||-|1.25|-|mJ|



**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=1300A/µs|-|190|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.70|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|27.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-280|-|A/µs|



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IKD15N60R 

## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
12<br>SSS<br>11 TLL) a<br>10 TRACI ih TT UPFESTANNNORE SET aT<br>9 CTI calll<br>SL SSI 10 FPSST]<br>5 HMEENTE\ SESE SPCNe<br>8<br>= TUE & OSE<br>eT 5 a tp=1µs a ok<br>7 TUM tv | |Ee<br>tvoe TU AUIT EUHI @ = Eee SeatNeer TTTT<br>10µs<br>8] oe Re<br>6 20µs<br>go eeA PEIN TUM) 8ce ay oarTI S|NTI<br>5 50µs<br>EC M 8 easiness<br>1 200µs<br>e)2] 4 TUM EIN ELM e) aEee ee<br>500µs<br>CCITT); 3 \ ®2 svSear<br>aa\ a DC Orell<br>2<br>1 CPom Ptot=8,6W, Rthja=8K/W C o o c,AT) ec<br>0 0.1<br>0.1 como 1 10 TN il 100 1 CUI 10 LE 100 TE 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T vj 175°C; V GE=15V)<br>(Tvj ≤ 175°C, Ta=55°C, D=0.5, VCE=400V,<br>VGE=15/0V, rG=15 Ω , PCB mounting with<br>thermal vias and heatsink, see Appnote:<br>www.infineon.com/igbt)<br>250 35<br>30<br>200<br>25<br>150<br><x-a oaSEENGEEEoaa) 20<br>7) oO<br>2) or<br>15<br>100<br>oO 1<br>a©<br>10<br>50<br>5<br>0 0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 3. Power dissipation as a function of case Figure 4. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br>


Datasheet 

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IKD15N60R 

## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
45 45<br>40 40<br>of] LW LF<br>35 VGE=20V 4) = 35 VGE=20V a<br>Bl eZ,<br>17V 17V<br>30 | 30 /<br>WW 15V WW 15V<br>13V 13V<br>25 25<br>11V 11V<br>20 9V 20 9V<br>Ww / wy<br>7V 7V<br>15 15<br>10 10<br>aN<br>5 5<br>a) eee) A D<br>V,<br>0 0<br>| 4 A<br>0 1 2 3 4 0 1 2 3 4<br>P—S—— |<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T vj=25°C) ( T vj=175°C)<br>45 3.5<br>Tj=25°C IC=7.5A<br>Tj=175°C IC=15A<br>40 IC=30A<br>3.0<br>eee et<br>35<br>x= x 2.5 = a<br>e f ee e<br>30<br>/<br>Ante<br>2.0<br>25<br>es EEE<br>5toy 20 W 1.5<br>15<br>| Fe<br>1.0<br>ee ee<br>10<br>0.5<br>oy eee oe<br>5<br>0 0.0<br>4 6 8 10 12 14 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter saturation voltage<br>( V CE=10V) a function of junction temperature<br>I C I C<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>


( _V_ GE=15V) 

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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
1000 aaa 1000<br>a a es se | td(off) ee ee ee ee<br>tf<br>a NG a ee ee ee eee 1I td(on) poa a<br>tr<br>a p et<br>el = 100 t td(off) a e.| =fe 100 ate<br>tf<br>ip)im 1|1| td(on) poaa aes a ip) aaa ee<br>tr<br>= = = a<br>- SSS es ee<br>OQ a eeeeee a eeee ee<br>a eee<br>E E eee ae<br>eB ofscopoee TPB leche<br>2) 10 a ee 2) 10 TTT TIO<br>7 (a se 7 a<br>po a es<br>a ee<br>po eT a ee<br>a a es a ee<br>a re a ee ee ee<br>1 1<br>0 5 10 15 20 25 30 0 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, r G=15 Ω , Dynamic test circuit in V GE =15/0V, I C =15A, Dynamic test circuit in<br>Figure E) Figure E)<br>1000 aa 7<br>| 1 td(off) a aee ee ee typ.<br>I tf p o — min.<br>td(on) max.<br>tr<br>F he S =<br>| a ee ee ee ee Ww 6<br>e e eee<br>_ —|— — =<br>a O ~s<br>— 100 a eS a 7s<br>ip) a a ~~<br>uw poa a (oe) 5 ss<br>= a a NS _<br>- a Wy ae<br>Q ee ee ee :: os<br>ee ee~~<br>E = 4 = —<br>5 10 [ood < —<br>. a ee Ww ~~<br>a es 7 ~~<br>po wi<br>ee ~<br>a ee se x ~~<br>a eseo) 3 ~<br>1 2<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 11. 

(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =15A, _r_ G=15 , Dynamic test circuit in Figure E) 

Figure 12. 

( _I_ C=0.25mA) 

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## TRENCHSTOP[TM] 

**==> picture [488 x 286] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.5 1.8<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>= aé = a —<br>/ 1.5 ao<br>2 2.0 5 ee<br>ie) / (op) v7 “<br>nm / Ww Lot<br>a / 1.2<br>O—! 1.5 uA/ Oo—! “7aa<br>& / &<br>x y [7] 7 x 0.9 +<br>a/<br>1.0<br>=<br>=O ra 4 a a =x= 0.6 a_<br>Ee O =<br>aZa Ee _<br>7 —_<br>- 0.5 y“ LZO a= _ [—_] -T~<br>0.3<br>7/ ia =<br>a Za _<br>- [=]<br>ao<br>0.0 0.0<br>0 5 10 15 20 25 30 0 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>E E<br>**----- End of picture text -----**<br>


Figure 13. 

**==> picture [151 x 28] intentionally omitted <==**

**----- Start of picture text -----**<br>
(inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, r G=15 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>


Figure 14. 

**==> picture [151 x 28] intentionally omitted <==**

**----- Start of picture text -----**<br>
(inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, I C =15A, Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>


**==> picture [490 x 286] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.5 1.5<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>z ce aa > ue<br>op) L ooo (ep) L “7<br>Lu 7 am Lc<br>7)icp) 1.0 oT Pas 7)icp) 1.0 “7<br>—! - —!<br>t ed COG ae<br>a oo e [|<br>=r<br>pf=r —eft=<br>5 0.5 5 0.5<br>EE _|—--<br>n<br>0.0 0.0<br>25 50 75 100 125 150 175 300 350 400 450<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>


Figure 15. 

(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =15A, _r_ G=15 , Dynamic test circuit in Figure E) 

Figure 16. 

(inductive load, _T_ vj =175°C, _V_ GE=15/0V, _I_ C =15A, _r_ G=15 , Dynamic test circuit in Figure E) 

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## TRENCHSTOP[TM] 

**==> picture [233 x 285] intentionally omitted <==**

**----- Start of picture text -----**<br>
16<br>120V<br>480V<br>14<br>J \/<br>_ 12 /| /<br>2 7<br>ul<br><a 10 /\/<br>oc<br>Lu ey E 8 a<br>E<br>=<br>Ww<br>uwE 6<br>5<br>- 4<br>2<br>0<br>0 20 40 60 80 100<br>Q GE , GATE CHARGE [nC]<br>GE<br>V<br>**----- End of picture text -----**<br>


Figure 17. Typical ( _I_ C=15A) 

**==> picture [230 x 251] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 a<br>( a es es es<br>Cies<br>_ a<br>| Coes a ee<br>Cres<br>| eea<br>ro |<br>nT. i\<br>2 \\<br>7E VN<br>= VON<br>ialZ 100 a\ ><br>< a Ss<br>oO Neae ee eee<br>- apoaeee<br>i ee<br>10<br>0 5 10 15 20 25 30<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>**----- End of picture text -----**<br>


Figure 18. 

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**----- Start of picture text -----**<br>
( V GE<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
175 14<br>12<br>= =<br>150<br>fi LZ g<br>ia uw<br>ac© =a 10<br>or Zz<br>e 125 | <<br>a= 2 8<br>fe) =E<br>O EK<br>6<br>5 100 3<br>ocO/ a<br>kK adkK 4<br>o (e)<br>(e) -_<br>O . O<br>75<br>2<br>50 0<br>12 14 16 18 20 10 11 12 13 14 15<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 19. Typical short circuit collector current as a Figure 20. Short circuit withstand time as a function of<br>function of gate-emitter voltage gate-emitter voltage<br>( V CE 400V, start at T vj=25°C) ( V CE 400V, start at T vj ≤ 150°C)<br>I C(SC) t SC<br>**----- End of picture text -----**<br>


11 

Datasheet 

2014-03-12 

## IKD15N60R 

## TRENCHSTOP[TM] 

**==> picture [470 x 286] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 Seer | Sat ae eat ee EH STIT TIT T T TI<br>S eee Waaul<br>RQ S Y<br>1<br>eS _ A D=0.5 _ AMata<br>< 0.2 AV) IT D=0.5<br>0.1 0.2<br>0.1 Seeeen TEeo<br>Wuoa= BEHeem aymii | Aan 0.05 aHAIAT|| oea= Aayy) eePll 0.1 IIITT<br>=<7 APreeA |I ee 0.020.01 TT Ty<x a e e e weana ee eal 0.050.02 MN Til<br>single pulse 0.01<br>z Te A seit | Veo<br>ero 0.1 ae A 4 single pulse<br>va Ne |) ree<br>fiicp)= 0.01 COAaA| VE"| |oe|eo| fiicp) aCUI Caraaii| aAcileee7 ailaa<br>2 eo = Co e |<br>© cet --[i] © HH -- ||<br>es a | F UM AAT =F Sel<br>a a ee cee Te I ii<br>i: 1 2 3 4 i: 1 2 3 4<br>ri[K/W]: 0.0478 0.3033 0.2438 0.0281 ri[K/W]: 0.393 1.0808 0.4767 0.0568<br>I τ i[s]: T 9.7E-5 4.4E-4 2.0E-3 0.03723 Sail Hl H τ i[s]: 1.2E-4 3.4E-4 H 1.9E-3 0.02678<br>T eel ( IN<br>0.001 0.01<br>IM er<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>


Figure 21. 

( _D_ = _t_ p/T) 

Figure 22. Diode function ( _D_ = _t_ p/T) 

**==> picture [490 x 285] intentionally omitted <==**

**----- Start of picture text -----**<br>
225 2.00<br>Tj=175°C, IF = 15A Tj=175°C, IF = 15A<br>Tj=25°C, IF = 15A Tj=25°C, IF = 15A<br>200 L [Ee 1.75 =<br>i=<br>aT O)<br>175 1.50<br>FL<br>> [O]<br>> uw<br>Oo: 150 >8 1.25<br>ow w<br>ow ~ QD<br>a 125 es a 1.00<br>re ~~ ~ ~ i-<br>™~ —_—<br>100 0.75<br>™~<br>75 0.50<br>1000 1100 1200 1300 1400 1500 1000 1100 1200 1300 1400 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>


Figure 23. Typical of diode ( _V_ R=400V) 

Figure 24. 

( _V_ R=400V) 

12 

Datasheet 

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IKD15N60R 

## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
30.0 0<br>Tj=175°C, IF = 15A Tj=175°C, IF = 15A<br>Tj=25°C, IF = 15A Tj=25°C, IF = 15A<br>Se | | §E<br>27.5<br>-400<br>— n<br>= a _ TT<br>ae 25.0 a<br>O cs -800<br>> oa<br>> 22.5 ~oO<br>2<r<br>aa0 3 1200<br>i 20.0 2 a 2 SS<br>> = . > ~<br>Ww = ~<br>e_ | Le -1600 pe—<br>17.5<br>| P|| ™~ ™~ —<br>P|<br>15.0 -2000<br>| dS<br>1000 1100 1200 1300 1400 1500 1000 1100 1200 1300 1400 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 25. Typical reverse recovery current as a Figure 26. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>


( _V_ R=400V) 

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**----- Start of picture text -----**<br>
45 2.5<br>Tj=25°C, UG=0V IF=7.5A<br>40 Tj=175°C, UG=0V IIFF=15A=30A<br>oN OE<br>35 ~ TY<br>=si 30 Wwg 2.0<br>&a) 25 3<br>Qa Q<br>owt 20 /) ow<x<br>= =<br>wr (ag<br>15 1.5<br>: ry<br>10 fF yy : ttt t |]<br>5<br>0 1.0<br>0 1 2 3 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>


Figure 27. 

Figure 28. 

13 

Datasheet 

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IKD15N60R 

**==> picture [86 x 38] intentionally omitted <==**

## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## Package Drawing PG-TO252-3 

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|**A**<br>**DIM**<br>**b**<br>**A1**|**MILLIMETERS**|**MILLIMETERS**|
|---|---|---|
||MIN<br>2.16<br>064<br>0.00|MAX<br>2.41<br>0.15<br>089|
|**b3**<br>**b2**<br>**c**<br>|4,95<br>.<br>0.46<br>0.65|5.50<br>1.15<br>0.61<br>.|
|**c2**|0.40|0.98|
|**D**|5.97|6.22|
|**D1**|5.02|5.84|
|**E**|6.35|6.73|
|**E1**|4.32|5.21|
|**e**|2.29 (BSC)||
|**e1**|4.57 (BSC)||
|**N**|3||
|**H**|9.40|10.48|
|**L**|1.18|1.78|
|**L3**|0.89|1.27|
|**L4**|0.51|1.02|



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**----- Start of picture text -----**<br>
DOCUMENT NO.<br>Z8B00003328<br>SCALE 0<br>2.5<br>0 2.5<br>5mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>05-02-2016<br>REVISION<br>06<br>**----- End of picture text -----**<br>


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IKD15N60R 

**==> picture [86 x 38] intentionally omitted <==**

## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Testing Conditions** 

**==> picture [252 x 588] intentionally omitted <==**

**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>


Figure C. **Definition of diode switching characteristics** 

**==> picture [7 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

15 

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IKD15N60R 

**==> picture [86 x 38] intentionally omitted <==**

## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Revision�History** 

IKD15N60R 

## **Revision:�2014-03-12,�Rev.�2.4** 

## Previous Revision 

|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|0.1|2010-02-01|-|
|2.1|2011-01-17|Release of final datasheet|
|2.2|2013-02-19|Changepackage|
|2.3|2014-02-26|Without PB free logo|
|2.4|2014-03-12|Storage temp-55...+150°C|



16 

V�2.4 2014-03-12 

Datasheet 

## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/IKD15N60RATMA1/igbt-30-a-165-v-250-w-600-to-252-dpak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ikd15n60ratma1/igbt-600v-30a-175deg-c-250w/dp/3294650RL)
---

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