# IGBT, 20 A, 2.2 V, 150 W, 600 V, TO-252 (DPAK), 3 Pins

![Product image](https://novapart.co/image/farnell:3775942/)

**URL**: https://novapart.co/products/IKD10N60RFATMA1/igbt-20-a-22-v-150-w-600-to-252-dpak-3-pins
**SKU**: IKD10N60RFATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.4780
**Stock**: 1000+
**Lead Time**: 218 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP |
| Power Dissipation | 150W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-252 (DPAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 20A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 2.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3775942/)

## IKD10N60RF 

## TRENCHSTOP[TM] 

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Features: C<br>TRENCHSTOP [TM] Reverse Conducting (RC) technology for 600V<br>applications offering<br>¢ Optimized Eon, Eoff and Qrr for low switching losses<br>G<br>¢ Operating range of 4 to 30kHz<br>E<br>* Smooth switching performance leading to low EMI levels<br>* Very tight parameter distribution<br>* Maximum junction temperature 175°C<br>¢ Short circuit capability of 5us C<br>¢ Best in class current versus package size performance<br>* Qualified according to JEDEC for target applications i<br>¢ Pb-free lead plating; ROHS compliant (solder temperature “Cp heap<br>http://www.infineon.com/igbt/ S =<br>Complete product spectrum and PSpice Models: | ay<br>G<br>Applications:<br>E<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKD10N60RF|600V|10A|2.2V|175°C|K10R60F|PG-TO252-3|



Datasheet www.infineon.com 

2017-09-26 

IKD10N60RF 

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## TRENCHSTOP[TM] �RC-Drives�Fast�Series 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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## TRENCHSTOP[TM] �RC-Drives�Fast�Series 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||20.0<br>10.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||30.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||30.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||20.0<br>10.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||30.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_c=25°C|_P_tot||150.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,1)<br>junction - case|_R_th(j-c)||-|-|1.00|K/W|
|Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|2.60|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|75|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|50|K/W|



1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. 

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## TRENCHSTOP[TM] �RC-Drives�Fast�Series 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=10.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.20<br>2.30|2.50<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=10.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.10<br>2.00|2.40<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.17mA,_V_CE=_V_GE|4.3|5.0|5.7|V|
|Zero gate voltage collector current1)|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>1000|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=10.0A|-|4.6|-|S|
|Integratedgate resistor|_r_G|||none||Ω|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|655|-|pF|
|Output capacitance|_C_oes||-|37|-||
|Reverse transfer capacitance|_C_res||-|22|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=10.0A,<br>_V_GE=15V|-|64.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=25°C|-|74|-|A|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=26.0Ω,_R_G(off)=26.0Ω,<br>_L_σ=50nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E|-|12|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|168|-|ns|
|Fall time|_t_f||-|18|-|ns|
|Turn-on energy|_E_on||-|0.19|-|mJ|
|Turn-off energy|_E_off||-|0.16|-|mJ|
|Total switchingenergy|_E_ts||-|0.35|-|mJ|



1) Not subject to production test - verified by design/characterization 

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## TRENCHSTOP[TM] �RC-Drives�Fast�Series 

**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** 

|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=750A/µs|-|72|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.27|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|9.1|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-146|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=26.0Ω,_R_G(off)=26.0Ω,<br>_L_σ=50nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E|-|12|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|178|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.31|-|mJ|
|Turn-off energy|_E_off||-|0.21|-|mJ|
|Total switchingenergy|_E_ts||-|0.52|-|mJ|



**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=720A/µs|-|112|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.62|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|12.9|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-136|-|A/µs|



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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
10<br>9<br>ul a<br>8<br>HSN 10 A<br>Baill pfAt<br>x: 7 n t a o n e nNNI x| PTE ST not for linear use Et EHH E EHHEtt<br>6 6 oo m<br>a CTT UWPTI TTT Ga oeSE rS||<br>C 5 | ee ee<br>(e) (e)<br>8 4 LUA EAM TM 1 LETITIA<br>SL ELT<br>O 3 TTILUM fe)O aeeeee el<br>fe)- a a allNII 2- aeeRRS Saas<br>2<br>CALL<br>1 O) — oooonioooth<br>0 0.1<br>0.1 1 10 100 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T vj 175°C; V GE=15V)<br>( T vj ≤ 175°C, T a =55°C, D =0.5, V CE=400V,<br>V GE =15/0V, r G=26 Ω , PCB mounting with<br>thermal vias and heatsink, see Appnote:<br>www.infineon.com/igbt)<br>160<br>20<br>140<br>18<br>ttt CREE<br>120<br>16<br>Pe) No N o<br>g 100 Ne 14 EN<br>- zZoa :<br>12<br>|D 80 EASEOo EAA<br>10<br>: : es | | | IN | |<br>: 60 \ Bf 8 A<br>. oO<br>: \ ie ee<br>6<br>40<br>4<br>IN - PN<br>20<br>\ aw<br>2<br>0 0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 3. Power dissipation as a function of case Figure 4. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br>


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## ~~—RG-DrivesFastSeriles~~ TRENCHSTOP[TM] ~~#8 ©~~ 

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**----- Start of picture text -----**<br>
30 30<br>VGE = 20V VGE = 20V<br>17V 17V<br>25 ee 25 Lee<br>ae ee,<br>15V 15V<br>13V 13V<br>20 20<br>11V 11V<br>9V 9V<br>7V 7V<br>15 15<br>10 10<br>5 5<br>0 0<br>0 1 2 3 4 0 1 2 3 4<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T vj=25°C) ( T vj=175°C)<br>30 4.0<br>Tj = 25°C IC = 1A<br>Tj = 175°C IC = 5A<br>3.5 IC = 10A<br>25 Esa—T h = E IC = 20A TOE<br>ee 3.0<br>e 20 y e e<br>2.5<br>eee:<br>ep) 15 ff BL 2.0 Reo<br>1.5<br>/PaPeoa 10 es SSSa<br>Br 8 1.0 eee<br>a<br>5<br>0.5<br>eA<br>0 fe  7eee 0.0<br>4 6 8 10 12 14 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 7. Figure 8.<br>( Typical V CE=10V)  transfer characteristic rypicat on of junction tompersture voltage as<br>( V GE=15V)<br>I C I C<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] 

**==> picture [474 x 341] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>a a — |1 td(off) ee——— es ee ee ee<br>tf<br>ee td(on) a<br>tr<br>100 F |i ttd(off)f e  ee P| [t] eae [eed] tT | tf<br>1 td(on) a aee ee Va<br>ne S tr SS e 100 e<br>g f o eg (SSSR<br>OQ@ post~~ emo e d OQ8 poESSER| ee a]<br>10<br>10<br>- a a a [FF<br>a es t+ tt tt tt tt<br>a ee ee ee ee eee a<br>a ee<br>FO a<br>1 1<br>5.0 7.5 10.0 12.5 15.0 17.5 20.0 0 10 20 30 40 50 60 70 80 90 100 110<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, r G=26 Ω , Dynamic test circuit in V GE =15/0V, I C =10A, Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
7<br>td(off) typ.<br>tf min.<br>td(on) max.<br>es tr O 6 _<br>= ~T~S<br>cry fe) 5 ts<br>100<br>7 $= :<br>Ww a ee ee ee o oe<br>= a ee ee 1 —<br>F a ee ee ~~ ><br>4<br>9zs a eeee = — ae<br>Ee {| | | of e aL<br>s fo) EE 3 PSL<br>| | | | | | | ==<br>oO<br>5 2 PF} dtl.<br>10 1<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 11. 

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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=15/0V,<br>I C =10A, r G=26 , Dynamic test circuit in<br>Figure E)<br>**----- End of picture text -----**<br>


Figure 12. 

( _I_ C=0,17mA) 

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## TRENCHSTOP[TM] 

**==> picture [471 x 341] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.2 1.0<br>Eoff Eoff<br>Eon Eon =<br>(ee ee |  a<br>Ets Y Ets vy?<br>1.0<br>“ 0.8 m r]<br>ee | pe<br>E ee eef E UZ “<br>nm nm<br>7)io) 0.8 7 Z 7)io) 7“<br>—!2 ee7 —! 0.6 eeeZ<br>><br>7<br>2 0.6 eeZ a<br>7 ae ee<br>ee via —<br><=2 4 ee7 a<=2 0.4 eea<br>0.4<br>eT eT Cee<br>a an : a<br>ae ee ee ee<br>- =a -<br>0.2<br>ee 0.2 Zz 1 | ee eee<br>eT | | | |<br>0.0 0.0<br>5.0 7.5 10.0 12.5 15.0 17.5 20.0 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, r G=26 Ω , Dynamic test circuit in V GE =15/0V, I C =10A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0.6 0.8<br>Eoff Eoff<br>Eon Eon<br>Ets 0.7 Ets<br>0.5<br>0.6<br>nm “7 nm ec<br>7)o 0.4 vie -7 7)ep) co “7<br>0.5<br>4 - aa) Poa<br>> > -7<br>w —_ ow eo<br>0.3 0.4<br>oO Oo a_<br>Zz _- Zz 0.3 =<br>ep 0.2 Leo| | =<br>ee<br>ae = 0.2 |- _<br>0.1<br>0.1<br>0.0 0.0<br>25 50 75 100 125 150 175 300 325 350 375 400 425 450<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical switching energy losses as a<br>E E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=15/0V,<br>I C =10A, r G=26 , Dynamic test circuit in<br>Figure E)<br>**----- End of picture text -----**<br>


(inductive load, _T_ vj =175°C, _V_ GE=15/0V, _I_ C =10A, _r_ G=26 , Dynamic test circuit in Figure E) 

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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
16 Cs 1000 a a<br>— V CC = 120V / a es<br>V CC<br>== 2 480v / a a<br>14 —_— 7 Poa a<br>Cies<br>12 Coes<br>uw Cres<br>S 7 / = + ++<br>: et e<br>H 10 & fl<br>Fei 8 P| z— 100 a|i  A<br>E= 9 Eeeeee<br>< a ee<br>ul a a Ne ee<br>6<br>b ° PONSRee ee<br>4<br>2<br>0 10<br>0 10 20 30 40 50 60 70 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of<br>( I C=10A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>160 12<br>140<br>10<br>Zzi Dn— \ EE EL Ly<br>Ww= SERRE =e PRE \<br>120<br>: vile LIN EE<br>Q<br>o 8<br>e: 100 PPT yyy e PENT<br>rs : lele ti} ALLLi<br>PeLo bo2 Go<br>3 80 ZL = 6 \<br>E a)<br>a) O<br>OETT 60 JTTT TTT owys CEEEN TT<br>4<br>g fy 5s ttt} ALLL<br>ocSL 40 Lo (e)et] Pe EA\<br>a 7p)<br>fo) 7 x \<br>2<br>sree 20 yy ye PEN<br>0 0<br>12 14 16 18 20 10 11 12 13 14 15 16 17 18 19<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>I C(SC) t SC<br>**----- End of picture text -----**<br>


Figure 19. 

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**----- Start of picture text -----**<br>
( V CE 400V, start at T vj=25°C)<br>**----- End of picture text -----**<br>


Figure 20. 

**==> picture [121 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
( V CE 400V, start at T vj=150°C)<br>**----- End of picture text -----**<br>


10 

Datasheet 

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## IKD10N60RF 

## TRENCHSTOP[TM] 

**==> picture [475 x 286] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>hnPtH eee tere WT<br>tee Mo<br>Ww_=z Aeecn eySALI]An) A | Ww 1 COMICaTT Sit]Ta i ST| TT<br>D = 0.5 D = 0.5<br>ge 0.2 2 HE 0.2<br>< ALA II lll < SS SER<br>0.1 0.1<br>0.05 0.05<br>ae 0.02 ain 0.02<br>: 0.1 ea<br>or Py Ml Za 0.01 Se aUiibe 0.01<br>uux iHH a ZaeaeAl CUTErTh oruw alll piali]f | |<br>E YI724IT ee TT’ | single pulse || ro 0.1 \| [ single pulse<br>Zz a Te rH<br>WwBB BEDTM |LTAJ jAAVaY Y W PaWe IE UU| ZzLu |Co a  TT TTAae OeY ,<br>SUN W 4 wile - Do ee AM 7<br>© IAT) om | ae aa mi<br>TIC Lette ete ee nt I ee,  ott<br>cael i Rema CM a I UIT TT<br>i: 1 2 3 4 i: 1 2 3 4<br>ri[K/W]: 0.0972 0.4393 0.3919 0.0443 ri[K/W]: 0.3192 1.604 0.6161 0.0732<br>τ i[s]: 1.1E-4 4.5E-4 2.0E-3 0.03487 τ i[s]: 6.4E-5 2.6E-4 1.6E-3 0.021807<br>0.01 Weald a 0.01 fi a<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>


Figure 21. 

( _D_ = _t_ p/T) 

Figure 22. 

( _D_ = _t_ p/T) 

**==> picture [225 x 285] intentionally omitted <==**

**----- Start of picture text -----**<br>
150<br>Tj = 25°C, IF = 10A<br>Tj = 175°C, IF = 10A<br>et<br>125<br>BEz PreyeroR yyy<br>100<br>PSCCOCES<br>Ww2 | oN) |<br>> ‘<br>75<br>ore AGN\<br>Bf NSC<br>50<br>es ee\N ~<br>25<br>pp<br>0<br>700 900 1100 1300 1500 1700 1900<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br>


Figure 23. 

( _V_ R=400V) 

**==> picture [223 x 285] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.8<br>Tj = 25°C, IF = 10A<br>Tj = 175°C, IF = 10A<br>0.7<br>ae<br>im=ye 0.6 FE ~ => | L|<br>HE Pe<br>0.5<br>8na<br>Wi<br>0.4<br>im<br>geOe 0.3 ~Fo tT | |<br>0.2<br>0.1<br>0.0<br>700 900 1100 1300 1500 1700 1900<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>rr<br>Q<br>**----- End of picture text -----**<br>


Figure 24. 

( _V_ R=400V) 

11 

Datasheet 

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IKD10N60RF 

## TRENCHSTOP[TM] 

**==> picture [466 x 303] intentionally omitted <==**

**----- Start of picture text -----**<br>
30 0<br>Tj = 25°C, IF = 10A Tj = 25°C, IF = 10A<br>EeT Tj = 175°C, I F F = 10A .} LE eT Tj = 175°C, IF = 10A<br>25 SO -200<br>ee= ee a<br>07 7<br>esag 20 eeeea ee -400 eee<br>5i>a7 —ie} N\<br>x4 4 5<br>Ce 15 eere ee -600 ee ee<br>gp let<br>i 7 aan i<br>Ww ®<br>eee eee<br>0 10 — 3 -800 \<br>=i<br>>=<br>i<br>owes De<br>5 -1000<br>Pt te TE eGEP OG<br>0 -1200<br>700 900 1100 1300 1500 1700 1900 700 900 1100 1300 1500 1700 1900<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 25. Typical reverse recovery current as a Figure 26. Typical diode peak rate of fall of reverse<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>


Figure 25. Typical function ( _V_ R=400V) 

( _V_ R=400V) 

**==> picture [474 x 303] intentionally omitted <==**

**----- Start of picture text -----**<br>
30 3.0<br>25<br>2.5 IF = 1A<br>IF = 5A<br>IF = 10A<br>IF = 20A<br>zc Pt tt ft | ry To<br>20 Ww<br>= || 7) ft | fe<br>;“ Tj = 175°C, VGE = 0V oy] 8EF 2.0 P ee<br>Tj = 25°C, VGE = 0V<br>: Ve<br>re)Q 15 \ / a -——<br>e a ie —<br>fo NY gee<br>1.5<br>10<br>ge | | ff | | 8<br>Pt | iA | | pt<br>1.0<br>5<br>PE | YE Et [a<br>n/a/ pt tt et<br>0 0.5<br>P ieTTT hE<br>0 1 2 3 4 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 27. Typical diode forward current as a function Figure 28. Typical diode forward voltage as a function<br>I F V F<br>**----- End of picture text -----**<br>


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IKD10N60RF 

**==> picture [86 x 38] intentionally omitted <==**

## TRENCHSTOP[TM] �RC-Drives�Fast�Series 

## Package Drawing PG-TO252-3 

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**==> picture [140 x 55] intentionally omitted <==**

**==> picture [129 x 40] intentionally omitted <==**

**==> picture [158 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
MILLIMETERS<br>DIM<br>MIN MAX<br>A 2.16 2.41<br>A1 0.00 0.15<br>b 0.64 0.89<br>b2 0.65 1.15<br>b3 4,95 5.50<br>c 0.46 0.61<br>c2 0.40 0.98<br>D 5.97 6.22<br>D1 5.02 5.84<br>E 6.35 6.73<br>E1 4.32 5.21<br>e 2.29 (BSC)<br>e1 4.57 (BSC)<br>N 3<br>H 9.40 10.48<br>L 1.18 1.78<br>L3 0.89 1.27<br>L4 0.51 1.02<br>**----- End of picture text -----**<br>


**==> picture [83 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
DOCUMENT NO.<br>Z8B00003328<br>SCALE 0<br>2.5<br>0 2.5<br>5mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>05-02-2016<br>REVISION<br>06<br>**----- End of picture text -----**<br>


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IKD10N60RF 

**==> picture [86 x 38] intentionally omitted <==**

## TRENCHSTOP[TM] �RC-Drives�Fast�Series 

## **Testing Conditions** 

**==> picture [252 x 588] intentionally omitted <==**

**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


**==> picture [189 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


**==> picture [7 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


**==> picture [169 x 63] intentionally omitted <==**

Figure D. 

**==> picture [7 x 4] intentionally omitted <==**

**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

14 

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Datasheet 

IKD10N60RF 

**==> picture [86 x 38] intentionally omitted <==**

## TRENCHSTOP[TM] �RC-Drives�Fast�Series 

## **Revision�History** 

IKD10N60RF 

## **Revision:�2017-09-26,�Rev.�2.5** 

## Previous Revision 

|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2012-02-24|Final data sheet|
|2.2|2013-12-10|New value ICES max limit at 175°C|
|2.3|2014-02-26|Without PB free logo|
|2.4|2014-03-12|Storage temp-55...+150°C|
|2.5|2017-09-26|Update Fig. 13 E(Ic)|



15 

V�2.5 2017-09-26 

Datasheet 

## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/IKD10N60RFATMA1/igbt-20-a-22-v-150-w-600-to-252-dpak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ikd10n60rfatma1/igbt-600v-20a-150w-to-252/dp/3775942)
---

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