# IGBT, 20 A, 1.65 V, 150 W, 600 V, TO-252 (DPAK), 3 Pins

![Product image](https://novapart.co/image/farnell:2839423RL/)

**URL**: https://novapart.co/products/IKD10N60RATMA1/igbt-20-a-165-v-150-w-600-to-252-dpak-3-pins
**SKU**: IKD10N60RATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.3800
**Stock**: 10+
**Lead Time**: 141 days (indicative)

## Description

DC Collector Current:20A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:150W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No. of Pins

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP RC |
| Power Dissipation | 150W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-252 (DPAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 20A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.65V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2839423RL/)

## IGBT 

## IKD10N60R 

TM 

IKD10N60R 

## TRENCHSTOP[TM] 

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Features:<br>TRENCHSTOP [TM] Reverse Conducting (RC)<br>applications offering<br>¢ Optimised V CEsat and V_ F for low conduction losses<br>* Smooth switching performance leading to low EMI<br>* Very tight parameter distribution<br>¢ Operating range of 1 to 20kHz<br>* Maximum junction temperature 175°C<br>¢ Short circuit capability of 5us<br>¢ Best in class current versus package size<br>* Qualified according to JEDEC for target<br>¢ Pb-free lead plating; ROHS compliant (for<br>temperature 260°C, MSL1)<br>* Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>Applications:<br>* Consumer motor drives<br>**----- End of picture text -----**<br>


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|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKD10N60R|600V|10A|1.65V|175°C|K10R60|PG-TO252-3|



Datasheet www.infineon.com 

2014-03-12 

IKD10N60R 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||20.0<br>10.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||30.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||30.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||20.0<br>10.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||30.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_c=25°C|_P_tot||150.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,1)<br>junction - case|_R_th(j-c)||-|-|1.00|K/W|
|Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|2.60|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|75|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|50|K/W|



1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=10.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.65<br>1.85|2.10<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=10.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.70<br>1.70|2.10<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.17mA,_V_CE=_V_GE|4.3|5.0|5.7|V|
|Zero gate voltage collector current1)|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>1000|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=10.0A|-|6.1|-|S|
|Integratedgate resistor|_r_G|||none||Ω|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|655|-|pF|
|Output capacitance|_C_oes||-|37|-||
|Reverse transfer capacitance|_C_res||-|22|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=10.0A,<br>_V_GE=15V|-|64.0|-|nC|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=25°C|-|74|-|A|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=60nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E|-|14|-|ns|
|Rise time|_t_r||-|10|-|ns|
|Turn-off delaytime|_t_d(off)||-|192|-|ns|
|Fall time|_t_f||-|139|-|ns|
|Turn-on energy|_E_on||-|0.21|-|mJ|
|Turn-off energy|_E_off||-|0.38|-|mJ|
|Total switchingenergy|_E_ts||-|0.59|-|mJ|



1) Not subject to production test - verified by design/characterization 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** 

|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=1000A/µs|-|62|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.56|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|20.3|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-260|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=60nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E|-|13|-|ns|
|Rise time|_t_r||-|11|-|ns|
|Turn-off delaytime|_t_d(off)||-|217|-|ns|
|Fall time|_t_f||-|211|-|ns|
|Turn-on energy|_E_on||-|0.35|-|mJ|
|Turn-off energy|_E_off||-|0.58|-|mJ|
|Total switchingenergy|_E_ts||-|0.93|-|mJ|



**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=1000A/µs|-|98|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.22|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|20.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-259|-|A/µs|



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IKD10N60R 

## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
11<br>10 UI<br>— ELI EU FAST<br>CERAM PL ANIN ENTAIL<br>9<br>10<br>OUI\ TUTE ETTATI or bperbers<br><x 8 Qo aepf eeNeaNNe<br>Zz| 7 COIR\ zZ§ poRSH tp=1µs er NN NT<br>WW WW pe er ONT<br>10µs<br>6<br>ST LAM TUINTE LUM & Eee ee inESA<br>20µs<br>ae a i | LA | NII<br>5<br>2 2 50µs rT<br>p L a<br>1<br>= 4 TVR PTT & 100µs cn<br>e) mel SF Re SS ttt<br>8 3 OMI CTIINCI\ | IN e)& 500µs aFRESE<br>> SS Se<br>2 COI > DC rereSot TEttET TN4ENTI I<br>A) = ESSERE<br>1<br>TTTTIN Ptot=8,6W,Rthja=8,4K/W TATE TAT =| Fi<br>\<br>rome o)<br>0 0.1<br>0.1 ooo 1 10 TR 100 | 1 LUI 10 CII 100 E T 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T vj 175°C; V GE=15V)<br>(Tvj ≤ 175°C, Ta=55°C, D=0.5, VCE=400V,<br>VGE=15/0V, rG=23 Ω , PCB mounting with<br>thermal vias and heatsink, see Appnote:<br>www.infineon.com/igbt)<br>160<br>20<br>140<br>INCU 120 EXEEEE<br>z e K<br>15<br>100<br>a =)<br>SeeNEEEEQ 80 oO<br>\ sto 10<br>60 \ i N<br>aN<br>40<br>[Pr]<br>5<br>SE TT [TRE]<br>20<br>Santa pt ey<br>0 0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 3. Power dissipation as a function of case Figure 4. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
30 30<br>VGE=20V VGE=20V<br>17V 17V<br>25 15V — Jae 25 15V<br>13V Sy va 13V Sy, /<br>2) 11V SY 11V<br>20 20<br>9V le 9V ey<br>7V 7V<br>15 15<br>&<br>SOE SS<br>10 10<br>5 5<br>px fas<br>0 | 0 |<br>0 1 2 3 4 0 1 2 3 4<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>


Figure 5. Typical ( _T_ vj=25°C) 

Figure 6. Typical ( _T_ vj=175°C) 

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30 3.5<br>Tj=25°C IC=5A<br>Tj=175°C IC=10A<br>IC=20A<br>3.0<br>esi, Et<br>25<br>/ 5 eet<br>2.5<br>EbSein 20 [ =) geeeeeceaa<br>2.0<br>PUP AER<br>15<br>1.5<br>COP Be<br>10<br>1.0<br>O<br>5<br>0.5<br>0 0.0<br>4 6 8 10 12 14 0 25 50 75 100 125 150 175<br>- V GE  GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 7. Figure 8.<br>( Typical V CE=10V)  transfer characteristic rypicat on of junction tompersture voltage as<br>( V GE=15V)<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
1000 a SS ES ES ES 1000 a a a<br>a | td(off) a a ee ee es<br>tf<br>pooN Sa 1I td(on) aeea aee ee ee ee<br>tr<br>poeaNP— | p eeeote| | eee<br>a= 100 e t td(off) a e = 100 a ae<br>tf<br>ip)im 11|| td(on) aaeeaee ee ee ee ip)| aaa aeees<br>tr<br>= = == ===— = aee<br>- Se I es a<br>OQ a e eee a ee ee ee ee ee<br>=<br>E E oo ae<br>Bt ee Bo Leppert<br>2) 10 a ee 2) 10 oe SE Ee<br>7 po 7 Se A OO<br>a ee es po<br>a<br>aa caa eeee eeeeee ee a e eeee ee<br>pert ee ee ee ee ee ee<br>1 1<br>0 5 10 15 20 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =175°C, V CE=400V,=400V, (inductive load, T vj =175°C, V CE=400V,=400V,<br>V GE =15/0V, r G=23=23 Ω , Dynamic test circuit in V GE =15/0V, I C =10A, Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
(inductive load, T vj =175°C, V CE=400V,=400V, (inductive load, T vj =175°C, V CE=400V,=400V,<br>V GE =15/0V, r G=23=23 Ω , Dynamic test circuit in V GE =15/0V, I C =10A, Dynamic test circuit in<br>Figure E) Figure E)<br>1000 aa 7<br>| 1 td(off) a aee ee ee typ.<br>I tf p o — min.<br>td(on) max.<br>tr<br>F he S =<br>| a ee ee ee ee Ww 6<br>_ =<br>—_—<br>_— (oe) ys<br>— 100 a eS a 7s<br>ip)uw porraa a (oe)a< 5 ~~ssPf<br>= a a NS _<br>- a Wy ae<br>Q ee ee ee :: os<br>ee ee~~<br>E = 4 = —<br>§ 10 bocce] E < —<br>. a es Ww ~~<br>a es 7 ~~<br>po wi<br>ee ~L<br>a ee se x ~~<br>a eseo) 3 ~<br>1 2<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 11. 

Figure 12. Gate-emitter of junction ( _I_ C=0.17mA) 

(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =10A, _r_ G=23 , Dynamic test circuit in Figure E) 

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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
2.00 1.5<br>Eoff Eoff<br>Eon Eon<br>1.75 Ets Ets<br>5 vc 5 ea<br>& 1.50 Z = L “7<br>Lu 7 Lu ra<br>7)n 7 4 (op)7) 1.0 pra -<br>fo) 1.25 Z fe) Lec<br>pa) 7 aa) wee<br>> 7 > Dred<br>oO / oO<br>1.00<br>ff ff<br>g: 7 | a eep<br>0.75<br>: Z ye—|) 2 - _a<br>zZ Oe 0.5<br>FE y/o FE oa<br>ew eer TE :<br>. 0.50 7 ol ie a<br>on<br>0.25 Uey Ua = : | ok<br>- [—]<br>_<br>0.00 0.0<br>0 5 10 15 20 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, r G=23 Ω , Dynamic test circuit in V GE =15/0V, I C =10A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1.0 1.2<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>1.0<br>0.8<br>Ww > Ww ooo<br>7)o “7a 7)o 0.8 =o ec<br>>—! 0.6 - ee —!> -<br>rd oo ra 0.6 ee<br>ofZeT 0.4 oT|eye|eZ | [tev] [—pep<br>OSpe pe -—— O 0.4 ee<br>0.2<br>0.2<br>ie ee ee<br>0.0 0.0<br>25 50 75 100 125 150 175 300 350 400 450<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>


Figure 15. 

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**----- Start of picture text -----**<br>
I C =10A, r G=23<br>Figure E)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V CE =400V, V GE=15/0V,<br>**----- End of picture text -----**<br>


Figure 16. 

(inductive load, _T_ vj =175°C, _V_ GE=15/0V, _I_ C =10A, _r_ G=23 , Dynamic test circuit in Figure E) 

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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
16 1000 a a<br>120V480V / / [a aeeee es eeee<br>14 7 Po<br>Cies<br>12 Coes<br>WW Cres<br>S 7 / = + ++<br>: et e<br>H 10 & fl<br>Ii 8 P| z= 100 A|i a<br>E= 9 Eeeeee<br>< a ee<br>ul a a Ne ee<br>6<br>b ° PONSRee ee<br>4<br>2<br>0 10<br>0 10 20 30 40 50 60 70 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of<br>( I C=10A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>150 14<br><<br>12<br>PaWw 8—<br>ia uw<br>ac© =a 10<br>or 100 Zz<br>e <<br>g 2 8<br>= E<br>fe) =<br>O EK<br>a)E a)O 6<br>O wa<br>aO<br>O 50<br>kK adkK 4<br>o (e)<br>(e) x<br>L 7p)<br>7) ~<br>2<br>0 0<br>12 14 16 18 20 10 11 12 13 14 15<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 19. Typical short circuit collector current as a Figure 20. Short circuit withstand time as a function<br>function of gate-emitter voltage gate-emitter voltage<br>( V CE 400V, start at T vj=25°C) ( V CE 400V, start at T vj ≤ 150°C)<br>C<br>GE<br>V<br>I C(SC) t SC<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] 

**==> picture [490 x 619] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 SaTiee Ti Ly<br>= e e<br>Q | 1 sl /|<br>aT E L D=0.5 TN I<br>Hee ECCT AT AS |<br>9 ¢ 0.2 YT TT SST TT D=0.5<br>a TT TT LA LT UT 9 A CCT<br>0.1 0.2<br>a em aea<br>0.1 oe i 0.05 0.1<br>a! eeer re re|| 0.020.01 | a! nia <= Hf wei] 0.050.02 Alli<br>. Aeee single pulse ee Ss CTY 0.01<br>id a CIC ie<br>0.1 single pulse<br>5 ut LA <a a<br>LA , w eateee<br>0.01<br>2 a afl Y o2 ee a<br>| | || -- {i f | --<br>$F- PTAI 13 APPA<br>a Mc Ar, Coane, = (il - meant r ll C14 /R; Co=telRe<br>aaaea e a ed S/ LAHE Ta<br>i: 1 2 3 4 i: 1 2 3 4<br>ri[K/W]: 0.0972 0.4393 0.3919 0.0443 ri[K/W]: 0.3192 1.604 0.6161 0.0732<br>τ i[s]: 1.1E-4 4.5E-4 2.0E-3 0.03487 τ i[s]: 6.4E-5 2.6E-4 1.6E-3 0.0218066<br>li a L TT TTT Te Ter Se TT T<br>0.001 0.01<br>OO el O00<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 21. IGBT transient thermal impedance as a Figure 22. Diode transient thermal impedance as a<br>function of pulse width (see page 4) function of pulse width (see page 4)<br>( D = t p/T) ( D = t p/T)<br>150 1.50<br>Tj=175°C, IF = 10A Tj=175°C, IF = 10A<br>Tj=25°C, IF = 10A Tj=25°C, IF = 10A<br>125<br>Ea Eee<br>: e 1.25 | rT] | [fl<br>> 100 om t<br>- —— r<br>>O<br>1.00<br>: — f | | | |<br>><br>e): 75 >wi:<br>Wwep) i eee ee _ inauw 0.75<br>a 50 . | Bf<br>: Bf<br>° oo<br>0.50<br>: 2 re<br>25<br>0 0.25<br>900 1000 1100 1200 900 1000 1100 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>c)th(j- c)th(j-<br>Z Z<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>


Figure 23. Typical of diode ( _V_ R=400V) 

Figure 24. 

( _V_ R=400V) 

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IKD10N60R 

## TRENCHSTOP[TM] 

**==> picture [235 x 285] intentionally omitted <==**

**----- Start of picture text -----**<br>
22<br>Tj=175°C, IF = 10A<br>Tj=25°C, IF = 10A<br>— 4<br>- y v|<br>Ww 7<br>21<br>y<br>Ww<br>5<br>WwW “<br>crBf OU<br>20<br>oraaao<br>19<br>900 1000 1100 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 25. Typical<br>function<br>( V R=400V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0<br>Tj=175°C, IF = 10A<br>Tj=25°C, IF = 10A<br>-100<br>2<br>x<br>re)<br>©<br>6 -200<br>©<br>PRa |<br>aS) |<br>* -300 So| |—_——|— *<br>-400<br>900 1000 1100 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>


Figure 26. 

( _V_ R=400V) 

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**----- Start of picture text -----**<br>
30 2.5<br>Tj=25°C, UG=0V IF=5A<br>Tj=175°C, UG=0V IF=10A<br>IF=20A<br>aa a<br>= 20 Ww 2.0<br>“ EF<br>wI<br>5a // y<br>Oo // QO<br>9 rd<br>x <<br>$ =<br>=a x<br>10 1.5<br>0 1.0<br>0 1 2 3 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>


Figure 27. 

Figure 28. 

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IKD10N60R 

**==> picture [86 x 38] intentionally omitted <==**

## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## Package Drawing PG-TO252-3 

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|**A**<br>**DIM**<br>**b**<br>**A1**|**MILLIMETERS**|**MILLIMETERS**|
|---|---|---|
||MIN<br>2.16<br>064<br>0.00|MAX<br>2.41<br>0.15<br>089|
|**b3**<br>**b2**<br>**c**<br>|4,95<br>.<br>0.46<br>0.65|5.50<br>1.15<br>0.61<br>.|
|**c2**|0.40|0.98|
|**D**|5.97|6.22|
|**D1**|5.02|5.84|
|**E**|6.35|6.73|
|**E1**|4.32|5.21|
|**e**|2.29 (BSC)||
|**e1**|4.57 (BSC)||
|**N**|3||
|**H**|9.40|10.48|
|**L**|1.18|1.78|
|**L3**|0.89|1.27|
|**L4**|0.51|1.02|



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**----- Start of picture text -----**<br>
DOCUMENT NO.<br>Z8B00003328<br>SCALE 0<br>2.5<br>0 2.5<br>5mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>05-02-2016<br>REVISION<br>06<br>**----- End of picture text -----**<br>


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IKD10N60R 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>


Figure C. **Definition of diode switching characteristics** 

**==> picture [7 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

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IKD10N60R 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Revision�History** 

IKD10N60R 

## **Revision:�2014-03-12,�Rev.�2.5** 

Previous Revision 

|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.1|2010-01-12|-|
|2.1|2011-01-17|Release of final datasheet|
|2.2|2013-02-19|Changepackage|
|2.3|2013-12-10|New value ICES max limit at 175°C|
|2.4|2014-02-26|Without PB free logo|
|2.5|2014-03-12|Storage temp-55...+150°C|



16 

V�2.5 2014-03-12 

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## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/IKD10N60RATMA1/igbt-20-a-165-v-150-w-600-to-252-dpak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ikd10n60ratma1/igbt-single-600v-20a-to-252/dp/2839423RL)
---

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