# IGBT, 9 A, 1.5 V, 31 W, 650 V, TO-252 (DPAK), 3 Pins
**URL**: https://novapart.co/products/IKD06N65ET6ARMA1/igbt-9-a-15-v-31-w-650-to-252-dpak-3-pins
**SKU**: IKD06N65ET6ARMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.6250
**Stock**: 1000+
**Lead Time**: 190 days (indicative)
## Description
Available until stocks are exhausted Alternative available
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP IGBT6 |
| Power Dissipation | 31W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-252 (DPAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 9A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.5V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3648091/)
## IKD06N65ET6
CE(sat) * Maximum junction temperature 175°C ¢ Short circuit withstand time 3us Trench and field-stop technology for 650V * very tight parameter distribution * high ruggedness, temperature stable behavior * low V CEsat and positive temperature coefficient * Low gate charge Q G ¢ Pb-free lead plating; ROHS compliant * Very soft, fast recovery anti-parallel Rapid diode ¢« Complete product spectrum and PLECS Models: www.infineon.com/igbt Potential Applications: Drives ¢ GPD (general purpose drives)
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|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKD06N65ET6|650V|6A|1.5V|175°C|K06EET6|PG-TO252-3|
Datasheet www.infineon.com
2020-04-20
IKD06N65ET6
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP™�IGBT6
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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IKD06N65ET6
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## TRENCHSTOP™�IGBT6
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax
_T_c=25°C
_T_c=100°C|_I_C||9.0
6.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||18.0|A|
|Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||18.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax
_T_c=25°C
_T_c=100°C|_I_F||11.0
6.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||18.0|A|
|Gate-emitter voltage
TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20
±30|V|
|Short circuit withstand time
_V_GE=15.0V,_V_CC≤360V
Allowed number of short circuits < 1000
Time between short circuits:≥1.0s
_T_vj=150°C|_t_SC||3|µs|
|Powerdissipation_T_c=25°C
Powerdissipation_T_c=100°C|_P_tot||31.0
15.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,
reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,
junction - case|_R_th(j-c)||-|-|4.90|K/W|
|Diode thermal resistance,
junction - case|_R_th(j-c)||-|-|6.40|K/W|
|Thermal resistance, min. footprint
junction - ambient|_R_th(j-a)||-|-|75|K/W|
|Thermal resistance, 6cm² Cu on
PCB
junction - ambient|_R_th(j-a)||-|-|50|K/W|
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## TRENCHSTOP™�IGBT6
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=3.0A
_T_vj=25°C
_T_vj=125°C
_T_vj=150°C|-
-
-|1.50
1.65
1.75|1.90
-
-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=3.0A
_T_vj=25°C
_T_vj=125°C
_T_vj=150°C|-
-
-|1.36
1.25
1.17|1.75
-
-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.10mA,_V_CE=_V_GE|4.8|5.6|6.4|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V
_T_vj=25°C
_T_vj=150°C|-
-|-
225|30
-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=3.0A|-|2.1|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V
_f_=1000kHz|-|283|-|pF|
|Output capacitance|_C_oes||-|22|-||
|Reverse transfer capacitance|_C_res||-|5|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=3.0A,
_V_GE=15V|-|13.7|-|nC|
|Short circuit collector current
Max. 1000 short circuits
Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤360V,
_t_SC≤3µs
_T_vj=150°C|-|35|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,
_V_CC=400V,_I_C=3.0A,
_V_GE=0.0/15.0V,
_R_G(on)=47.0Ω,_R_G(off)=47.0Ω,
_L_σ=30nH,_C_σ=30pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|15|-|ns|
|Rise time|_t_r||-|8|-|ns|
|Turn-off delaytime|_t_d(off)||-|35|-|ns|
|Fall time|_t_f||-|47|-|ns|
|Turn-on energy|_E_on||-|0.06|-|mJ|
|Turn-off energy|_E_off||-|0.03|-|mJ|
|Total switchingenergy|_E_ts||-|0.09|-|mJ|
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## TRENCHSTOP™�IGBT6
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,
_V_R=400V,
_I_F=3.0A,
_di_F_/dt_=614A/µs|-|30|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.12|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|6.1|-|A|
|Diode peak rate of fall of reverse
recoverycurrentduring_t_b|_di_rr_/dt_||-|-902|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,
_V_CC=400V,_I_C=3.0A,
_V_GE=0.0/15.0V,
_R_G(on)=47.0Ω,_R_G(off)=47.0Ω,
_L_σ=30nH,_C_σ=30pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|15|-|ns|
|Rise time|_t_r||-|8|-|ns|
|Turn-off delaytime|_t_d(off)||-|37|-|ns|
|Fall time|_t_f||-|48|-|ns|
|Turn-on energy|_E_on||-|0.07|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.11|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,
_V_R=400V,
_I_F=3.0A,
_di_F_/dt_=516A/µs|-|39|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.16|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|6.6|-|A|
|Diode peak rate of fall of reverse
recoverycurrentduring_t_b|_di_rr_/dt_||-|-690|-|A/µs|
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**----- Start of picture text -----**
N h | 3530 Py pp fd
10 a i)
<2— ATT eooon ss 25 STP.
tp = 1µs
6 Poay Sl AtA | | i =2 \
ee
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0.1 0
1 10 100 1000 25 50 75 100 125 150 175
V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]
Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case
( D =0, T C =25°C, T vj 175°C; V GE=15V. temperature
Recommended use at V GE ≥ 15V) ( T vj ≤ 175°C)
10 18
VGE=20V
15
8 18V
15V
: : 12 — TH
WW WW
e 6 | N\ e | 12V LH
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9
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0 UN TNC 0 LA\ A NG ee
25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]
Figure 3. Collector current as a function of case Figure 4. Typical output characteristic
temperature ( T vj=25°C)
( V GE ≥ 15V, T vj ≤ 175°C)
I C P tot
I C I C
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**----- Start of picture text -----**
18
15 Ve
VGE=20V
18V
12
bE eee 4
15V
12V
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0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V CE , COLLECTOR-EMITTER VOLTAGE [V]
I C
**----- End of picture text -----**
Figure 5. Typical ( _T_ vj=150°C)
**==> picture [230 x 285] intentionally omitted <==**
**----- Start of picture text -----**
18
Tvj = 25°C
Tvj = 150°C
15 |
/
12
5
i8a)
y 9
O
e /
:
6
O
3
i]
Y
TS
0
4 6 8 10 12 14
V GE , GATE-EMITTER VOLTAGE [V]
I C
**----- End of picture text -----**
Figure 6. Typical ( _V_ CE=50V)
**==> picture [471 x 286] intentionally omitted <==**
**----- Start of picture text -----**
2.4 CJ 100 a
IICC = 1.5A = 3A , eeot po a ee ee es
IC = 6A
2.2
Ss 2 | | fe |
: oa I
2.0
7A) - o
: 1.8 Lap | | fy ef
E -
10
nT r= a
ov 1.6 eo O RS ee ee
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5 eon = a eeee ee
m 2 EE | tf ft ft ft ft tt
1.4
ge ) | |PE se td(off)
1.2 tf
td(on)
tr
1.0 1
0 25 50 75 100 125 150 175 2 3 4 5 6 7 8 9 10
T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]
t
CEsat
V
**----- End of picture text -----**
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
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**----- Start of picture text -----**
7
**----- End of picture text -----**
**==> picture [151 x 29] intentionally omitted <==**
**----- Start of picture text -----**
(inductive load, T vj =150°C, V CE=400V,
V GE =0/15V, R G=47 Ω , Dynamic test
Figure E)
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**----- Start of picture text -----**
td(off)
tf a ee
100 |1 ttd(on)r a
e eeeeee eee
Ww Ww
ee
FF
o< o< 10 [unnnteoseqemececneeedeeneceesess|steecererssbenseessemanesenseeene|a a
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a a a ee ee -
PF ote] | | | tt Hf } fF ff
td(off)
tf
td(on)
tr
1 1
10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175
r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]
Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of
resistor junction temperature
(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE=400V,
V GE =0/15V, I C =3A,Dynamic test circuit in V GE=0/15V, I C =3A, R G=47 Ω ,Dynamic test
Figure E) circuit in Figure E)
t t
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**----- Start of picture text -----**
6 0.40
Eoff
typ. Eon
0.35 Ets
uw ¢
2 =) “
EF| —E 0.30 4
oO (0p) vo
>q 5 WWQ / v
fe) e) 0.25
L 4 :
in O> v 77
¢ rs 0.20 Fa
- Zz a 7
ff © ‘ /
E= Z=r 0.15 , “| 7 a7
= 4 O :
Lu FE ae oe
Lu0.05
3 0.00
25 50 75 100 125 150 175 2 3 4 5 6 7 8 9 10
T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]
E
GE(th)
V
**----- End of picture text -----**
Figure 11. Gate-emitter of junction ( _I_ C=0.10mA)
Figure 12.
(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _R_ G=47 Ω ,Dynamic test Figure E)
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**----- Start of picture text -----**
0.140 0.14
Eoff Eoff
EEonts 0.12 EEonts
0.120
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£& oe £&
nm) --oa )nm 0.10
ep)o 0.100 - io)o
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if veo 2 0.06 __
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-
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=- = 0.04 — —
0.040 py
0.02
0.020 0.00
10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175
r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]
Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a
function of gate resistor function of junction temperature
(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=0/15V,
V GE =0/15V, I C =3A, Dynamic test circuit in I C =3A, R G=47 ,Dynamic test circuit in
Figure E) Figure E)
0.16 7 16 Lt
Eoff Fa — V CC =130V .
Eon V CC
0.14 E Ets l.) | 44A 14 Es — ly,
0.12 12
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eee ee [eee]
0.00 0
200 250 300 350 400 450 500 0 2 4 6 8 10 12 14
V CE , COLLECTOR-EMITTER VOLTAGE [V] Q G , GATE CHARGE [nC]
Figure 15. Typical switching energy losses as a Figure 16. Typical gate charge
function of collector emitter voltage ( I C=3A)
(inductive load, T vj =150°C, V GE=0/15V,
E E
GE
V
E
**----- End of picture text -----**
**==> picture [55 x 19] intentionally omitted <==**
**----- Start of picture text -----**
I C =3A, R G=47
Figure E)
**----- End of picture text -----**
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**----- Start of picture text -----**
1 D = 0.5
\ g ASan
0.2
3 x A
ie 100 a es wvSERRE/\f aaMinas. Ae HHH
0.1
————— es ment, SEMIN CHIC UICCUI
g a CT AAT EU | 0.05
PS ®RST 0.1 l
0.02
x , x PCS 0.01
single pulse
O& 10 PSSN fff | egZ eAAU TN MT TM ThTET
a
a ee——— s i,Zz 0.01 /
> OCH --|
p—— | Er dr re CPCCA |
Cies
Coes
|e Cres |} a i:ri[K/W]: 10.03888 20.2418 33.7089 40.87113 50.06078 61.3E-3
τ i[s]: 2.0E-5 1.1E-4 6.0E-4 2.9E-3 0.0796 3.521135
1 (e e 0.001 a a |
0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100
V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]
Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal impedance
collector-emitter voltage ( D = t p/T)
C
c)th(j-
Z
**----- End of picture text -----**
**==> picture [18 x 9] intentionally omitted <==**
**----- Start of picture text -----**
( V GE
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**----- Start of picture text -----**
10 ee a a 50 LSP|
CESEHHPAM CPEHHH CeeEET \ TTvjvj = 25°C, I = 150°C, IF = 3AF = 3A
$ Stir av a a a 45 |
rHTC aA|CCT | |tt [|]
D = 0.5 a
1
x
A= SennenZasaa at ae emmaatS00 aa 0.2 ee = 40 \\
0.1
a pt oS El F N
0.05
a Te a A \
Z 0.1 UT Ti 0.02 ILIA) 35
aaEe a A 0.01 CMey =| ~~.
Conn TTT
b St tt aan = A uw —
single pulse 30
eg 00 = a Pt
2 TT Lc) a
0.01
wv Ser esa sete sea Stl Re f -
- PT TT Tn TTT |
ANTM TE I IT | 25
FE eACL TINTeEA Ef] GHG Cif Co=teiRe ||
i: 1 2 3 4 5 6
ri[K/W]: 0.0498 0.3726 4.7892 1.0648 0.08 1.5E-3
i τ i[s]: 1.6E-5 9.1E-5 5.1E-4 a 2.8E-3 0.069 3.9968 |
A|
0.001 20
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100 300 400 500 600 700 800 900 1000 1100 1200
t p ,PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]
t rr
c)th(j-
Z
**----- End of picture text -----**
Figure 19. Diode function ( _D_ = _t_ p/T)
Figure 20.
( _V_ R=400V)
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**----- Start of picture text -----**
0.20
Tvj = 25°C, IF = 3A
Tvj = 150°C, IF = 3A
0.18
0.16
O ? im
: ‘ :
5 / D
0.14
ee oO
O B== a,
(oe)
0.12
or or
afWwrt 0.10 — ‘uw>
0.08
; PL EEL EEL
0.06
300 400 500 600 700 800 900 1000 1100 1200
di F /dt , DIODE CURRENT SLOPE [A/us]
Q rr I rr
**----- End of picture text -----**
Figure 21.
( _V_ R=400V)
**==> picture [216 x 285] intentionally omitted <==**
**----- Start of picture text -----**
10
Tvj = 25°C, IF = 3A
Tvj = 150°C, IF = 3A
9
oo
8
,
7 /anaZ|
7 Wa
6
/ (
/
5
iy
4
3 Elite E
2
300 400 500 600 700 800 900 1000 1100 1200
di F /dt , DIODE CURRENT SLOPE [A/us]
**----- End of picture text -----**
Figure 22.
( _V_ R=400V)
**==> picture [489 x 285] intentionally omitted <==**
**----- Start of picture text -----**
0 18
Tvj = 25°C, IF = 3A
Tvj = 150°C, IF = 3A Tvj = 25°C
16 Tvj = 150°C
-200
~- E L
~ S e 14 ra
a Te | tt
-400
12
E=e Pa2
asee= -600 ||w|i Wi| || 2WWa 10 /
8
ee -800 ee ee
PEON3 ' g fF
6
BS TTT Ne
- 1000 &
4
Pt | T N\NIN L//
-1200
2
Pt pt TE | TS /
-1400 Pte tT ET 0 aA
300 400 500 600 700 800 900 1000 1100 1200 0.5 1.0 1.5 2.0 2.5
di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]
I rr
/dt I F
rr
dI
**----- End of picture text -----**
Figure 23.
Figure 24.
( _V_ R=400V)
11
Datasheet
2020-04-20
IKD06N65ET6
**==> picture [233 x 286] intentionally omitted <==**
**----- Start of picture text -----**
2.00
IF = 1.5A
IF = 3A
IF = 6A
1.75 EL
1.50
Kk
i
O
>
Ww 1.25 ptt |
<2 = —_ ~
1.00
5 |
0.75
0.50
25 50 75 100 125 150 175
T vj , JUNCTION TEMPERATURE [°C]
F
V
**----- End of picture text -----**
Figure 25.
12
Datasheet
2020-04-20
IKD06N65ET6
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP™�IGBT6
## Package Drawing PG-TO252-3
**==> picture [391 x 283] intentionally omitted <==**
**==> picture [140 x 55] intentionally omitted <==**
**==> picture [129 x 40] intentionally omitted <==**
**==> picture [158 x 167] intentionally omitted <==**
**----- Start of picture text -----**
MILLIMETERS
DIM
MIN MAX
A 2.16 2.41
A1 0.00 0.15
b 0.64 0.89
b2 0.65 1.15
b3 4,95 5.50
c 0.46 0.61
c2 0.40 0.98
D 5.97 6.22
D1 5.02 5.84
E 6.35 6.73
E1 4.32 5.21
e 2.29 (BSC)
e1 4.57 (BSC)
N 3
H 9.40 10.48
L 1.18 1.78
L3 0.89 1.27
L4 0.51 1.02
**----- End of picture text -----**
**==> picture [83 x 175] intentionally omitted <==**
**----- Start of picture text -----**
DOCUMENT NO.
Z8B00003328
SCALE 0
2.5
0 2.5
5mm
EUROPEAN PROJECTION
ISSUE DATE
05-02-2016
REVISION
06
**----- End of picture text -----**
13
V�2.2 2020-04-20
Datasheet
IKD06N65ET6
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP™�IGBT6
## **Testing Conditions**
**==> picture [252 x 588] intentionally omitted <==**
**----- Start of picture text -----**
V GE (t)
90% V GE
10% V GE t
I C (t)
90% I C 90% I C
10% I C 10% I C
t
V CE (t)
t
t d(off) t f t d(on) t r
Figure A.
V GE (t)
90% V GE
10% V GE
t
I C (t)
2% I C t
V CE (t)
t 2 t 4
E off [=] V CE x I C x d t E on [=] V CE x I C x d t
t 1 t 3 2% V CE
t
t 1 t 2 t 3 t 4
Figure B.
**----- End of picture text -----**
**==> picture [153 x 99] intentionally omitted <==**
**----- Start of picture text -----**
I,V
dI F /dt Qt rrrr== Qt aa++ tQ b b
a b
Q a Q b
dI
**----- End of picture text -----**
Figure C. **Definition of diode switching characteristics**
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**
t
**----- End of picture text -----**
**==> picture [169 x 63] intentionally omitted <==**
Figure D.
**==> picture [7 x 4] intentionally omitted <==**
**----- Start of picture text -----**
CC
**----- End of picture text -----**
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
14
V�2.2 2020-04-20
Datasheet
IKD06N65ET6
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP™�IGBT6
## **Revision�History**
IKD06N65ET6
## **Revision:�2020-04-20,�Rev.�2.2**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2020-03-16|Final|
|2.2|2020-04-20|Final|
15
V�2.2 2020-04-20
Datasheet
## **Trademarks**
## party.
## **Warnings**
## Links
- [View this product on Novapart](https://novapart.co/products/IKD06N65ET6ARMA1/igbt-9-a-15-v-31-w-650-to-252-dpak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ikd06n65et6arma1/igbt-650v-9a-31w-to-252/dp/3648091)
---
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