# IGBT, 12 A, 2.2 V, 100 W, 600 V, TO-252 (DPAK), 3 Pins

![Product image](https://novapart.co/image/farnell:2781027/)

**URL**: https://novapart.co/products/IKD06N60RFATMA1/igbt-12-a-22-v-100-w-600-to-252-dpak-3-pins
**SKU**: IKD06N60RFATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.3080
**Stock**: 1000+
**Lead Time**: 141 days (indicative)

## Description

DC Collector Current:12A; Collector Emitter Saturation Voltage Vce(on):2.2V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No. of Pins:

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP |
| Power Dissipation | 100W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-252 (DPAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 12A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 2.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781027/)

## IGBT 

IKD06N60RF TRENCHSTOP[TM] 

## IKD06N60RF 

## TRENCHSTOP[TM] 

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Features: C<br>TRENCHSTOP [TM] Reverse Conducting (RC) technology for 600V<br>applications offering<br>¢ Optimized Eon, Eoff and Qrr for low switching losses<br>G<br>¢ Operating range of 4 to 30kHz<br>E<br>* Smooth switching performance leading to low EMI levels<br>* Very tight parameter distribution<br>* Maximum junction temperature 175°C<br>¢ Short circuit capability of 5us C<br>¢ Best in class current versus package size performance<br>* Qualified according to JEDEC for target applications i<br>¢ Pb-free lead plating; ROHS compliant (solder temperature “Cp heap<br>http://www.infineon.com/igbt/ S =<br>Complete product spectrum and PSpice Models: | ay<br>G<br>Applications:<br>E<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKD06N60RF|600V|6A|2.2V|175°C|K06R60F|PG-TO252-3|



Datasheet www.infineon.com 

2014-03-12 

IKD06N60RF 

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## TRENCHSTOP[TM] �RC-Drives�Fast�Series 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 

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## TRENCHSTOP[TM] �RC-Drives�Fast�Series 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||12.0<br>6.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||18.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||18.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||12.0<br>6.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||18.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_c=25°C|_P_tot||100.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,1)<br>junction - case|_R_th(j-c)||-|-|1.50|K/W|
|Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|3.60|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|75|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|50|K/W|



1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. 

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## TRENCHSTOP[TM] �RC-Drives�Fast�Series 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=6.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.20<br>2.30|2.50<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=6.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.10<br>2.00|2.40<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.11mA,_V_CE=_V_GE|4.3|5.0|5.7|V|
|Zero gate voltage collector current1)|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>1000|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=6.0A|-|2.9|-|S|
|Integratedgate resistor|_r_G|||none||Ω|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|470|-|pF|
|Output capacitance|_C_oes||-|24|-||
|Reverse transfer capacitance|_C_res||-|14|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=6.0A,<br>_V_GE=15V|-|48.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=25°C|-|46|-|A|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=50nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E|-|7|-|ns|
|Rise time|_t_r||-|8|-|ns|
|Turn-off delaytime|_t_d(off)||-|106|-|ns|
|Fall time|_t_f||-|22|-|ns|
|Turn-on energy|_E_on||-|0.09|-|mJ|
|Turn-off energy|_E_off||-|0.09|-|mJ|
|Total switchingenergy|_E_ts||-|0.18|-|mJ|



1) Not subject to production test - verified by design/characterization 

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## TRENCHSTOP[TM] �RC-Drives�Fast�Series 

**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** 

|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=770A/µs|-|48|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.16|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.4|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-195|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=50nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E|-|8|-|ns|
|Rise time|_t_r||-|8|-|ns|
|Turn-off delaytime|_t_d(off)||-|115|-|ns|
|Fall time|_t_f||-|35|-|ns|
|Turn-on energy|_E_on||-|0.15|-|mJ|
|Turn-off energy|_E_off||-|0.13|-|mJ|
|Total switchingenergy|_E_ts||-|0.28|-|mJ|



**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=770A/µs|-|74|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.34|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|10.3|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-177|-|A/µs|



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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
3.5<br>a Pitty<br>10<br>3.0 Tt TTT pt A A SN<br>are ~N a|a<br>— SHS SES<br>2.5 tiie Ea ee Se eee<br>s NJ —_s pL aNN iNT<br>ia ia tp=10µs<br>a 2.0 Fe 20µs eaiiisen<br>oO oO 50µs | \)<br>a a jemi<br>O 1.5 O 1 100µs oe<br>Ww \ Ww A<br>a a Ceee<br>ro} \ re) 200µs rrr TE TT VT YT<br>) ) EEA<br>° 1.0 ° ee 500µs ot TNT<br>DC<br>\<br>0.5<br>0.0 0.1<br>0.1 1 10 100 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T vj 175°C; V GE=15V)<br>( T vj ≤ 175°C, T a =55°C, D =0.5, V CE=400V,<br>V GE =15/0V, r G=23 Ω , PCB mounting, 6cm 2Cu,<br>Ptot=2,4W)<br>100 14<br>90<br>12<br>80<br>es 70 | \| fz 10<br>Zze) Zz<br>é KV<br>60<br><xéo |ok oaia) 8<br>pio NL 8<br>2) 50 or<br>° e<br>u 40 2 6<br>o [O]<br>is 30<br>4<br>20<br>\<br>2<br>10<br>0 0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br>


> Figure 3. Power **temperature** ( _T_ vj ≤ 175°C) 

Figure 4. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C) 

Datasheet 

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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
18 18<br>VGE=20V<br>16 16<br>17V<br>cee i// ERR<br>14 15V 14 VGE=20V<br>13V 17V<br>12 See // 2 12 any,<br>11V 15V<br>pS Ry<br>9V 13V<br>10 10<br>PLEA 7V 11V<br>JE SSS<br>8 8 9V<br>7V<br>PRS) PSS<br>6 6<br>1 CON Gerry SSR<br>4 4<br>ann Zanns oY Z.68<br>2 2<br>JI fNn it |grees<br>ATLL<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T vj=25°C) ( T vj=175°C)<br>18 4.0<br>a / Le<br>Tj=25°C IC=0.5A<br>Tj=175°C IC=3A<br>16 3.5 IC=6A<br>IC=12A<br>EU ELLE<br>14<br>P O LL}? Be ep<br>3.0<br>_ fi | 8 a<br>e y be<br>i 12 / < 2.5<br>10<br>PEL Cee<br>2.0<br>8<br>O a<br>1.5<br>Ati AT ye<br>6<br>1.0<br>4<br>2 SeogTE one 0.5 LE<br>0 0.0<br>4 y 5 A 6 7 8 9 10 11 12 * PEER 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 7. Figure 8.<br>( Typical V CE=10V)  transfer characteristic rypicaa func t ion collectorof junctionemittertemperature Saturation voltage<br>I C I C<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>


( _V_ GE=15V) 

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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
td(off)<br>tf<br>td(on)<br>tr<br>St Efe<br>100 SS =<br>100<br>ee ee e ee<br>a a  e ————<br>EEE EE eee a a<br>w a ae ee ee ee ee ee a a a<br>£ p—t | rtf]<br>| ttd(off)f PPPSS]| lu} csoe aEe<br>F td(on) F >-_ _<br>tr<br>é= 9 |pcosann<br>O O wean<br>10<br>10<br>= a ee ee ee = er<br>i Doo-to ee |) aes a a<br>a ee ee<br>er a ee ee Cae a<br>4 a<br>Pt | | tt<br>1 1<br>3 4 5 6 7 8 9 10 11 12 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>t t<br>**----- End of picture text -----**<br>


Figure 9. 

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**----- Start of picture text -----**<br>
Figure 10. Typical switching times as a<br>resistor<br>(inductive load, T vj =175°C, V CE=400V,=400V,<br>V GE =15/0V, I C =6A, Dynamic test circuit<br>Figure E)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,=400V,<br>V GE =15/0V, r G=23 Ω , Dynamic test circuit in V GE =15/0V, I C =6A, Dynamic test circuit in<br>Figure E) Figure E)<br>6.0<br>typ.<br>min.<br>5.5 max.<br>100 TE— _—_—_—peers eses ee (V)x “RY ~e<br>| td(off) a ee ee = se<br>1 tf a a | 5.0 =<br>td(on)<br>ory I tr a ro)eeee oN ~A A<br>Z| a = Pe _—<br>4.5<br>= p p g<br>: —— 4.0 ~<br>Zz ye pS ~~<br>5 FE S a<br>10<br>Ee ar _<br>3.5<br>= eea Eee EFUS ~ SN<br>. a ee ti ~ ~~<br>3.0<br>po | ~<br>2.5<br>1 2.0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 11. 

Figure 12. 

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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=15/0V,<br>I C =6A, r G=23 , Dynamic test circuit in<br>Figure E)<br>**----- End of picture text -----**<br>


( _I_ C=0,11mA) 

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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
0.6 0.5<br>Y<br>EEEoffonts “ YY | Yo EEEoffonts “7<br>0.5 Pan<br>0.4<br>7 ee eee<br>ee e e<br>£& Vl £& —<br>LU WA LU<br>7)Bt 0.4 tT Uw2 7) “ +<br>9/ 0.3<br>>oO 7ms wa >oO 7a“<br>ef 0.3 eB Le<br>Q - 0.2<br>7 a © a |__<br>ei 0.2 —_<br>eb ep ee<br>eB pee<br>0.1<br>0.1 pet<br>| |<br>ett<br>0.0 0.0<br>3 4 5 6 7 8 9 10 11 12 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, r G=23 Ω , Dynamic test circuit in V GE =15/0V, I C =6A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0.30 0.4<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>0.25<br>0.3<br>Ww pan Ww Lec<br>7)noz; 0.20 7= Ea -i - 7)ap)zs}; ] | foe.L- --<br>oa aa L-<br>O o) ues<br>ow wa --<br>nm_ 0.15 ; Pf | nm 0.2 ;<br>oO —_ — O —_—<br>Zz --~f Zz<br>Zz ao Zz =<br>: - eo<br>O 0.10 —_——- | O _a<br>0.1<br>0.05<br>0.00 0.0<br>25 50 75 100 125 150 175 300 325 350 375 400 425 450<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical switching energy losses as a<br>E E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I C =6A, r G=23<br>Figure E)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V CE =400V, V GE=15/0V,<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
(inductive load, T vj =175°C, V GE=15/0V,<br>I C =6A, r G=23 , Dynamic test circuit in<br>Figure E)<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
16 1000<br>120V / / / Ca a a se ee<br>480V<br>aa a a a<br>14 / / a<br>/ ee ee<br>(a ee<br>= 12 / ee CCiesoes 0<br>O /_ 100 Cres<br>re)I 10 = pyON<br>S | / WwoO ONpu [NST]<br>iw 8 S o Zz po Sa<br>ui | £ [NSS<br>kb O ~SL Fee<br>< Toa<br>MW 6 oa a<br>x . 10<br>oO a eeeS es<br>aa<br>4 aee<br>a<br>2<br>a a<br>0 1<br>0 10 20 30 40 50 60 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


Figure 17. Typical ( _I_ C=6A) 

Figure 18. 

( _V_ GE 

**==> picture [471 x 285] intentionally omitted <==**

**----- Start of picture text -----**<br>
90 12<br>80<br>S SERREEEY PRE<br>10<br>: EE EL Ly<br>: e \<br>70 1 uw<br>ia e {oN<br>ef LE \<br>: 60 ke 8<br>Bry / s FEN ETT]<br>O lel<br>RTT] ]é EELALEETE<br>: 50 J D<br>E<br>6<br>a ; ef) QI<br>Zee: ,<br>40 | a)<br>:E es {tLPINTT<br>5eyeLo fs) Nr<br>a 30 VA O 4<br>ocee PEO LEA\<br>20<br>2 & \<br>2<br>10<br>Eee FEEEEEERE<br>0 0<br>12 14 16 18 20 10 11 12 13 14 15 16 17 18 19<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C(SC) t SC<br>**----- End of picture text -----**<br>


Figure 19. 

( _V_ CE 400V, start at _T_ vj=25°C) 

Figure 20. 

( _V_ CE 400V, start at _T_ vj=150°C) 

11 

Datasheet 

2014-03-12 

IKD06N60RF 

## TRENCHSTOP[TM] 

**==> picture [476 x 250] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 We<br>S D=0.5 MM 1 TT | D=0.5<br>< 277 0.2 et ae CU LALae 0.2<br>uw Bi 0 SU a tg a See ee ime<br>Ww2 ETJ TT 0.1 a Wwea aAyfA 0.1<br>0.05 0.05<br>270 cA = TE a ero<br>0.02 0.02<br>a Iere (IT FC TeTT<br>im cas PD 0.01 2 TIaLIEl 0.01<br>FEMae 0.1 Fe/ Da| il| single pulse imFE= ora eae|V/ |Lo |pe single pulse<br>0.1<br>2 AaA A ee et<br>5 CORZ O f| 5 aye at a Lae , HTH,<br>EL et cm, CUT ci<br>aPa rorm Tr To ol) ST<br>i: 1 2 3 4 i: 1 2 3 4<br>ri[K/W]: 0.1032 0.7299 0.5682 0.0638 ri[K/W]: 1.0958 1.6643 0.7461 0.0827<br>τ i[s]: 7.9E-5 4.0E-4 1.8E-3 0.0307 τ i[s]: 7.9E-5 2.8E-4 1.7E-3 0.02494<br>e mill ul a s [ a<br>0.01 0.01<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>


Figure 21. 

( _D_ = _t_ p/T) 

Figure 22. 

( _D_ = _t_ p/T) 

**==> picture [474 x 285] intentionally omitted <==**

**----- Start of picture text -----**<br>
120 0.6<br>Tj=25°C, IF = 6A<br>Se Tj=175°C, IF = 6A n eee<br>i ee e See<br>100 0.5<br>i e T e j=25°C, IF = 6A |e<br>Tj=175°C, IF = 6A<br>we] 80 | | pk | | ye 0.4 Jee |<br>Sea | ee~ ><br>A A ee ee<br>60 0.3<br>s) — 5<br>a Aee<br>ui ~~ 4 uw ff _j__j |__| —<br>a 40 Lu 0.2<br>2 ee<br>ag a eglu<br>fete ey<br>20 PE ey ® 0.1 EP ey<br>0 0.0<br>500 600 700 800 900 500 600 700 800 900<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>


Figure 23. Typical of diode ( _V_ R=400V) 

Figure 24. 

( _V_ R=400V) 

12 

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2014-03-12 

IKD06N60RF 

## TRENCHSTOP[TM] 

**==> picture [474 x 285] intentionally omitted <==**

**----- Start of picture text -----**<br>
12 0<br>Tj=25°C, IF = 6A Tj=25°C, IF = 6A<br>Tj=175°C, IF = 6A Tj=175°C, IF = 6A<br>11 EJ. a Sa<br>-50<br>= : > | | | T r y<br>a 7)<br>2= 10 zt],a iy ) | |<br>-100<br>neZn ae 2 Nee eee<br>9<br>:O 2 ie | XE)<br>plo PR<br>8 -150<br>> 2 SS<br>WY o<br>BRT 7 TT Leeyy EERE<br>4 = oe Ne<br>-200<br>é = : S<br>: — ce Ne<br>6<br>-250<br>et) A<br>5<br>PELE Pt tT tT tT |EN<br>4 -300<br> ELLE ) Geprereres<br>500 600 700 800 900 500 600 700 800 900<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>


Figure 25. Typical function ( _V_ R=400V) 

Figure 26. 

( _V_ R=400V) 

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**----- Start of picture text -----**<br>
18<br>Tj=25°C, VGE=0V a ee<br>Tj=175°C, VGE=0V ——]<br>16<br>14<br>z<br>12<br>10<br>a)<br>: |<br>Q<br>8<br>z<br>ae<br>wr<br>6<br>4<br>Saey Sane<br>2<br>0<br>0 1 2 3 4<br>V F , FORWARD VOLTAGE [V]<br>I F<br>**----- End of picture text -----**<br>


Figure 27. 

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**----- Start of picture text -----**<br>
3.0 | | | | tT<br>2.5 IF=0.5A<br>IF=3A<br>IF=6A<br>a e IF=12A e<br>2.0<br>EF<br>ee ee ee ee<br>e 1.5 |) | te |<br>(ag<br>ee<br>1.0<br>0.5<br>pf |<br>0.0<br>0 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>


Figure 28. 

13 

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IKD06N60RF 

**==> picture [86 x 38] intentionally omitted <==**

## TRENCHSTOP[TM] �RC-Drives�Fast�Series 

## Package Drawing PG-TO252-3 

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**==> picture [158 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
MILLIMETERS<br>DIM<br>MIN MAX<br>A 2.16 2.41<br>A1 0.00 0.15<br>b 0.64 0.89<br>b2 0.65 1.15<br>b3 4,95 5.50<br>c 0.46 0.61<br>c2 0.40 0.98<br>D 5.97 6.22<br>D1 5.02 5.84<br>E 6.35 6.73<br>E1 4.32 5.21<br>e 2.29 (BSC)<br>e1 4.57 (BSC)<br>N 3<br>H 9.40 10.48<br>L 1.18 1.78<br>L3 0.89 1.27<br>L4 0.51 1.02<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
DOCUMENT NO.<br>Z8B00003328<br>SCALE 0<br>2.5<br>0 2.5<br>5mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>05-02-2016<br>REVISION<br>06<br>**----- End of picture text -----**<br>


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IKD06N60RF 

**==> picture [86 x 38] intentionally omitted <==**

## TRENCHSTOP[TM] �RC-Drives�Fast�Series 

## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


**==> picture [189 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


**==> picture [7 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


**==> picture [169 x 63] intentionally omitted <==**

Figure D. 

**==> picture [7 x 4] intentionally omitted <==**

**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

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IKD06N60RF 

**==> picture [86 x 38] intentionally omitted <==**

## TRENCHSTOP[TM] �RC-Drives�Fast�Series 

## **Revision�History** 

IKD06N60RF 

## **Revision:�2014-03-12,�Rev.�2.4** 

## Previous Revision 

|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2012-02-24|Final data sheet|
|2.2|2013-12-10|New value ICES max limit at 175°C|
|2.3|2014-02-26|Without PB free logo|
|2.4|2014-03-12|Storage temp-55...+150°C|



16 

V�2.4 2014-03-12 

Datasheet 

## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/IKD06N60RFATMA1/igbt-12-a-22-v-100-w-600-to-252-dpak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ikd06n60rfatma1/igbt-single-600v-12a-to-252/dp/2781027)
---

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