# IGBT, 11.7 A, 2 V, 51.7 W, 600 V, TO-252 (DPAK), 3 Pins

![Product image](https://novapart.co/image/farnell:3648090/)

**URL**: https://novapart.co/products/IKD06N60RC2ATMA1/igbt-117-a-2-v-517-w-600-to-252-dpak-3-pins
**SKU**: IKD06N60RC2ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.2790
**Stock**: 1000+
**Lead Time**: 141 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP RC |
| Power Dissipation | 51.7W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-252 (DPAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 11.7A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3648090/)

IKD06N60RC2 

## TRENCHSTOP[TM] 

## **Features:** 

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TRENCHSTOP [TM]<br>**----- End of picture text -----**<br>


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http://www.infineon.com/rc-d2<br>**----- End of picture text -----**<br>


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|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKD06N60RC2|600V|6A|2V|175°C|K6DRC2|PG-TO252-3|



Datasheet www.infineon.com 

2020-09-28 

IKD06N60RC2 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||11.7<br>8.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||18.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||18.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||5.3<br>2.8|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||18.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±25|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||3|µs|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||51.7<br>25.9|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,1)<br>junction - case|_R_th(j-c)||-|-|2.90|K/W|
|Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|9.50|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|75|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|50|K/W|



1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=6.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.00<br>2.40|2.30<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=6.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.90<br>1.95|2.20<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.65mA,_V_CE=_V_GE|4.3|5.0|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|25<br>2500|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=6.0A|-|2.5|-|S|
|Integratedgate resistor|_r_G|||none||Ω|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=1000kHz|-|250|-|pF|
|Output capacitance|_C_oes||-|13|-||
|Reverse transfer capacitance|_C_res||-|10|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=6.0A,<br>_V_GE=15V|-|31.0|-|nC|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=49.0Ω,_R_G(off)=49.0Ω,<br>_L_σ=30nH,_C_σ=32pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|6|-|ns|
|Rise time|_t_r||-|11|-|ns|
|Turn-off delaytime|_t_d(off)||-|129|-|ns|
|Fall time|_t_f||-|30|-|ns|
|Turn-on energy|_E_on||-|0.17|-|mJ|
|Turn-off energy|_E_off||-|0.08|-|mJ|
|Total switchingenergy|_E_ts||-|0.25|-|mJ|



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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** 

|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=597A/µs|-|98|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|222.00|-|nC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-140|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=49.0Ω,_R_G(off)=49.0Ω,<br>_L_σ=30nH,_C_σ=32pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|6|-|ns|
|Rise time|_t_r||-|12|-|ns|
|Turn-off delaytime|_t_d(off)||-|170|-|ns|
|Fall time|_t_f||-|30|-|ns|
|Turn-on energy|_E_on||-|0.24|-|mJ|
|Turn-off energy|_E_off||-|0.12|-|mJ|
|Total switchingenergy|_E_ts||-|0.36|-|mJ|



**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=562A/µs|-|145|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|439.00|-|nC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|9.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-93|-|A/µs|



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## ~~RG~~ TRENCHSTOP[TM] Series forhard switching applications ~~tt”~~ 

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60 12<br>50 PPE 10 PA<br>| NN<br>eI\ 40 de LN 8<br>PE XE TE ELLEN<br>30 6<br>SERN: 20 \ oO 4 eee\<br>10 2<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Figure 2.<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ T vj ≤ 175°C)<br>18 18<br>VGE=20V VGE=20V<br>TT] V4 /<br>17V 17V<br>15 15V 15 15V<br>—/|) LN<br>13V 13V<br>11V 11V<br>12 12<br>9V 9V<br>7V 7V<br>9 9<br>6 6<br>3 3<br>iy cae) an<br>fo.<br>0 0<br>| | AS<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Figure 4.<br>( T vj=25°C) ( T vj=175°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] 

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18 5.0<br>Tj=25°C IC=3A<br>Tj=175°C 4.5 IC=6A<br>IC=12A<br>15<br>eI ff/ :zfe)  Bf 4.0<br>_< Eera 3.5<br>12<br>d Be |<br>3.0<br>a om<br>a) Ww<br>: aia 2<br>w 9 oa 2.5<br>:Ww: Goadef 2.0 Lee<br>e) 6 oO<br>1.5<br>O<br>1.0<br>[ oe ee<br>3<br>0.5<br>0 0.0<br>2 4 6 8 10 12 14 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>


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Figure 5. Typical<br>( V CE=20V)<br>**----- End of picture text -----**<br>


Figure 6. Typical a function ( _V_ GE=15V) 

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en ee ee ee 1000 SS<br>| td(off) ee ee ee ee 1 td(off) oe<br>tf tf<br>I td(on) ee ee ee ee i td(on) a<br>tr tr<br>a<br>| ea n a [|]<br>100 ee<br>= Se 100 ee ee ee ee<br>“ a) a eesD 2) a a kN<br>Ww PN a a eA<br>= = Po A NT<br>- ee a a ee a, Se<br>gI [stgwellsy I eS ed<br>E FE | | | | | |tT<br>=- 10 aa =~ 10 [}_ i poss<br>a ee eee a a<br>a ae ee ee a a a a ee<br>le<br>a a a pt perf<br>Pee<br>1 1<br>2 4 6 8 10 12 0 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, R G=49 Ω , Dynamic test circuit in V GE =15/0V, I C =6A, Dynamic test circuit in<br>Datasheet Figure E) 7 Figure E)<br>t t<br>**----- End of picture text -----**<br>


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Datasheet<br>**----- End of picture text -----**<br>


2020-09-28 

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## TRENCHSTOP[TM] 

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1000 aa 6<br>| i td(off) a ee ee ee typ.<br>I tf a ee ee ee eee _<br>td(on)<br>I a eeee<br>tr 5<br><x<br>a :<br>i<br>—Zze 100 fC| — | | | a 4<br>ip) a<br>im poa (e)<br>= a oO<br>- a Wy<br>3<br>OQ a ee ee ee ee ee<br><== ee -<br>= La<br>a2)7 10 pa eeoopyeSoeee Ww= 2<br>a ee x<br>a es eo)<br>Oe es 1<br>1 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 9. 

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V CE =400V, V GE =15/0V, I C=6A,<br>**----- End of picture text -----**<br>


Figure 10. 

( _I_ C=0.65mA) 

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R G=49<br>**----- End of picture text -----**<br>


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0.8 0.5<br>Eoff Eoff<br>Eon Eon<br>0.7 Ets Ets<br>/ a<br>a 4 5 0.4 -<br>£ 0.6 4 £ poe<br>(op) 7 (ep) . “7<br>a) v Z| Oo -"<br>e) 0.5 ¢ e)<br>0.3<br>><br>O<br>ow a 7 O Poe<br>0.4<br>ZzWw ¢ Y V4 owLu - _<br>uw ¢ 7 Z -<br>oO Y y uw 0.2 _<br>Zz 0.3 ¢” ZzO _ -<br>FEiO Y: y 7 iFEO 7<br>0.2<br>0.1<br>7<br>n e<br>0.1<br>0.0 0.0<br>2 4 6 8 10 12 0 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, R G=49 Ω , Dynamic test circuit in V GE =15/0V, I C =6A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
0.5 0.5<br>Eoff Eoff<br>Eon Eon Y<br>Ets Ets oY<br>— 0.4 0.4<br>Ww ” - ” ¢<br>2 aiDeve Ww2 ray, Z<br>O -- eo) ” 7<br>—! 0.3 —! 0.3<br>> 7 > ¢<br>na na ? 7<br>Ww Ww ,<br>Zz —_— Zz ” a<br>Ww _— Lu ” a<br>ZzoO 0.2 —— _ ence (Oo)Zz 0.2 a 7 7 a<br>E<br>0.1 0.1<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>


Figure 13. 

_I_ C =6A, _R_ G=49 Figure E) 

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**----- Start of picture text -----**<br>
V CE =400V, V GE=15/0V,<br>**----- End of picture text -----**<br>


Figure 14. 

(inductive load, _T_ vj =175°C, _V_ GE=15/0V, _I_ C =6A, _R_ G=49 , Dynamic test circuit in Figure E) 

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16 a | 1000 a a<br>V CC Cies<br>— = 120V | a<br>—7 V CC = 480V i Coes a<br>14 a / [| I Cres p o<br>7/ Ds e s ee ee<br>Sa 12 V7 eeas a ee<br>100<br>re)F 10 & a ee ee es ee<br>> _. / WwO a a a<br>W 8 TT Td 2 a<br>ke oO= ANeeme,<br>WW --<br>6<br><x . 10 a el ee<br>.<br>4 |ee<br>a<br>2<br>a<br>0 1<br>0 5 10 15 20 25 30 35 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=6A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] 

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60<br>|<br>RE<br>2 _ a a anni<br>=z 50 =2 1 |||Corr OZ<br>D=0.5<br>7 Ww Senet eeettl see Soma Tt<br>ieo > eeeTT St meee + 0.2 |<br>0.1<br>os 40 i)< =|anil<br>0.05<br>5 gE 0.02<br>: : Ae ll<br>: 2 0.1 Comer 7<br>0.01<br>30<br>O x Se single pulse<br>KE5 r et2<br>fe F ee Za<br>20 —<br>oO 2 SUT On Fai SAA<br>: BT 0.01  e le<br>Tr i | HI<br>a)oO o" neSse gotyoe  Ha octie, — Tl<br>~ 10 2 ell<br>E N<br>i: 1 2 3 4 5<br>ri[K/W]: 0.27885 2.1736 0.38883 0.02886 7.7E-4<br>τ i[s]: 1.4E-4 6.3E-4 3.2E-3 0.09737142 3.947901<br>|_|<br>" |__|<br>0 0.001<br>12 13 14 15 16 17 18 1E-7 1E-6 1E-5 1E-4 0.001 0.01<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical short circuit collector current as a Figure 18. IGBT transient thermal resistance<br>function of gate-emitter voltage ( D = t p/T)<br>( V CE 400V, T vj 150°C)<br>10 200<br>Eee ee a<br>a(|| | Tj=25°C, IF = 6Aj=25°C, IF = 6A=25°C, IF = 6AF = 6A = 6A<br>a | Tj=175°C, IF = 6Aj=175°C, IF = 6A=175°C, IF = 6AF = 6A = 6A yoo<br>180<br>PT<br>= SSS ae<br>SCO8 ines D=0.5 160 Wii<br>8 1 LUe A l TiT m lil 0.2 lle2 1<br>140<br>5 eA 0.1 = \<br>ne) eT<br>it TT, 0.05<br>120<br>0.02<br>a: ee tt ae \<br>ff _____.. 0.01 iil & A a<br>ge 0.1 ells> 100 .<br>single pulse<br>FE A 2 ce | 80 ~<br>E Aa eet = ee~~<br>eg NY —><br>7) 7 a Pt 60<br>0.01<br>2 VANILL I |<br>- | PACee i= A/R Co=telRe Hl 4020<br>A<br>i: 1 2 3 4 5 20 Pf ff<br>ri[K/W]: 0.45136 7.1994 1.8057 0.092859 7.4E-4<br>τ i[s]: 3.8E-5 2.4E-4 1.3E-3 0.03462926 4.012824<br>|_|<br>0.001 0<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 400 900 1400 1900 2400 2900<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 19. Diode transient thermal impedance as a Figure 20. Typical reverse recovery time as a function<br>function of pulse width of diode current slope<br>( D = t p/T) ( V R=400V)<br>I C(SC) Z c)th(j-<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
200<br>a<br>Tj=25°C, IF = 6Aj=25°C, IF = 6A=25°C, IF = 6AF = 6A = 6A<br>| Tj=175°C, IF = 6Aj=175°C, IF = 6A=175°C, IF = 6AF = 6A = 6A yoo<br>180<br>160 Wii<br>2 1<br>= 140 \<br>120<br>ae \<br>& A a<br>> 100 .<br>80 ~<br>= ee~~<br>—><br>Pt 60<br>4020 Pf ff<br>0<br>400 900 1400 1900 2400 2900<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
600 25<br>Tj=25°C, IF = 6A Tj=25°C, IF = 6A<br>Tj=175°C, IF = 6A Tj=175°C, IF = 6A<br>500<br>20<br>oO 2 Zz<br>a - Ww 7<br><x 400 owow 7 7<br>O 15 Z|<br>S D > [/] 7<br>a ee 7 7<br>> 300 v 7<br>0)eyigag 200 eae ELidnmw 10 /aA ZO<br>Lu uw /<br>> ><br>uw i<br>5<br>100<br>0 0<br>400 900 1400 1900 2400 2900 400 900 1400 1900 2400 2900<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery charge as a Figure 22. Typical reverse recovery current as a<br>Q rr I rr<br>**----- End of picture text -----**<br>


Figure 22. Typical function ( _V_ R=400V) 

( _V_ R=400V) 

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**----- Start of picture text -----**<br>
0 18 Ld<br>Tj=25°C, IF = 6A Tj=25°C<br>\ Tj=175°C, IF = 6A Tj=175°C /<br>ae e e =<br>-100 15<br>= \<br>g\<br><<br>N <=<br>°s -200 \ Znd 12 /<br>32 \N 3O<br>© -300 Q 9<br>5<br>: \ 5 }<br>o \ :<br>-400 6<br>8 \ fe) /j<br>-500 3<br>-600 0<br>400 900 1400 1900 2400 2900 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>Figure 23. Typical diode peak rate of fall of reverse Figure 24. Typical diode forward current as a function<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>


( _V_ R=400V) 

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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
3.5<br>IF=3A<br>IF=6A<br>IF=12A<br>3.0<br>2.5<br>Oo<br><x<br>Kk<br>i 2.0<br>><br>Q<br>a<br><x<br>1.5<br>[a<br>e)<br>LL<br>1.0<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>


Figure 25. 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## Package Drawing PG-TO252-3 

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**----- Start of picture text -----**<br>
MILLIMETERS<br>DIM<br>MIN MAX<br>A 2.16 2.41<br>A1 0.00 0.15<br>b 0.64 0.89<br>b2 0.65 1.15<br>b3 4,95 5.50<br>c 0.46 0.61<br>c2 0.40 0.98<br>D 5.97 6.22<br>D1 5.02 5.84<br>E 6.35 6.73<br>E1 4.32 5.21<br>e 2.29 (BSC)<br>e1 4.57 (BSC)<br>N 3<br>H 9.40 10.48<br>L 1.18 1.78<br>L3 0.89 1.27<br>L4 0.51 1.02<br>**----- End of picture text -----**<br>


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DOCUMENT NO.<br>Z8B00003328<br>SCALE 0<br>2.5<br>0 2.5<br>5mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>05-02-2016<br>REVISION<br>06<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


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t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Revision�History** 

IKD06N60RC2 

## **Revision:�2020-09-28,�Rev.�2.1** 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2020-09-28|Final data sheet|



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## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/IKD06N60RC2ATMA1/igbt-117-a-2-v-517-w-600-to-252-dpak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ikd06n60rc2atma1/igbt-600v-11-7a-51-7w-to-252/dp/3648090)
---

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