# IGBT, 6 A, 2.1 V, 100 W, 600 V, TO-252 (DPAK), 3 Pins

![Product image](https://novapart.co/image/farnell:1832340/)

**URL**: https://novapart.co/products/IKD06N60RATMA1/igbt-6-a-21-v-100-w-600-to-252-dpak-3-pins
**SKU**: IKD06N60RATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.3710
**Stock**: 10+
**Lead Time**: 218 days (indicative)

## Description

DC Collector Current:6A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No. of Pins:3Pins;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 100W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-252 (DPAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 6A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 2.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1832340/)

## IGBT 

## IKD06N60R 

TM 

IKD06N60R 

## TRENCHSTOP[TM] 

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Features:<br>TRENCHSTOP [TM] Reverse Conducting (RC)<br>applications offering<br>¢ Optimised V CEsat and V_ F for low conduction losses<br>* Smooth switching performance leading to low EMI<br>* Very tight parameter distribution<br>¢ Operating range of 1 to 20kHz<br>* Maximum junction temperature 175°C<br>¢ Short circuit capability of 5us<br>¢ Best in class current versus package size<br>* Qualified according to JEDEC for target<br>¢ Pb-free lead plating; ROHS compliant (for<br>temperature 260°C, MSL1)<br>* Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>Applications:<br>* Consumer motor drives<br>**----- End of picture text -----**<br>


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|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKD06N60R|600V|6A|1.65V|175°C|K06R60|PG-TO252-3|



Datasheet www.infineon.com 

2014-03-12 

IKD06N60R 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||12.0<br>6.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||18.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||18.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||12.0<br>6.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||18.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_c=25°C|_P_tot||100.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,1)<br>junction - case|_R_th(j-c)||-|-|1.50|K/W|
|Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|3.60|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|75|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|50|K/W|



1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=6.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.65<br>1.85|2.10<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=6.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.70<br>1.70|2.10<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.11mA,_V_CE=_V_GE|4.3|5.0|5.7|V|
|Zero gate voltage collector current1)|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>1000|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=6.0A|-|3.4|-|S|
|Integratedgate resistor|_r_G|||none||Ω|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|470|-|pF|
|Output capacitance|_C_oes||-|24|-||
|Reverse transfer capacitance|_C_res||-|14|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=6.0A,<br>_V_GE=15V|-|48.0|-|nC|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=25°C|-|46|-|A|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=60nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E|-|12|-|ns|
|Rise time|_t_r||-|7|-|ns|
|Turn-off delaytime|_t_d(off)||-|127|-|ns|
|Fall time|_t_f||-|152|-|ns|
|Turn-on energy|_E_on||-|0.11|-|mJ|
|Turn-off energy|_E_off||-|0.22|-|mJ|
|Total switchingenergy|_E_ts||-|0.33|-|mJ|



1) Not subject to production test - verified by design/characterization 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** 

|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=800A/µs|-|68|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.37|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|12.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-211|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=60nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E|-|12|-|ns|
|Rise time|_t_r||-|10|-|ns|
|Turn-off delaytime|_t_d(off)||-|164|-|ns|
|Fall time|_t_f||-|171|-|ns|
|Turn-on energy|_E_on||-|0.20|-|mJ|
|Turn-off energy|_E_off||-|0.36|-|mJ|
|Total switchingenergy|_E_ts||-|0.56|-|mJ|



**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=800A/µs|-|74|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.80|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|17.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-237|-|A/µs|



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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
4<br>ul / NIN (SPE<br>\ 10 poee NN oeat rN<br>3<br>x \ ey ee<br>_ \ x ee ee SRR ae Ne<br>2 _ po tp=1µs | ee NT Ne NS<br>te \ te2 peaeEN TNeen)iN<br>50µs<br>3 \ 3 | TUE TTT\<br>m 2 OTT<br>20µs<br>LL a Tq) Lta<br>ELCs 1 10µs<br>+ mena! SPSS Sa<br>200µs<br>ro ro Ee Se aiiimemaciil<br>Ss} Ss} el<br>500µs<br>1 en es| eee |<br>DC<br>0 0.1<br>0.1 1 10 100 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T vj 175°C; V GE=15V)<br>( T vj ≤ 175°C, T a =55°C, D =0.5, V CE=400V,<br>V GE =15/0V, r G=23 Ω , PCB mounting, 6cm2<br>Cu, Ptot=2,4W)<br>110<br>100<br>12<br>90<br>80<br>10<br>z<br>> > E<br>70<br>fe < i<br>8<br>oO 60 \ =)<br>7)2) Nee oOor<br>50<br>ce} Xd N<br>u 2 6<br>= 40 =<br>ee 4<br>30<br>20<br>PP NE \<br>2<br>10<br>0 0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br>


> Figure 3. Power **temperature** ( _T_ vj ≤ 175°C) 

Figure 4. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C) 

Datasheet 

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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
18 VGE=20V a eel /<br>16 17V I<br>15V —H /<br>14<br>13V<br>11V<br>12<br>WW 9V<br>10 7V<br>8<br>6<br>4<br>yr<br>2<br>|<br>0<br>0 1 2 3 4<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C<br>**----- End of picture text -----**<br>


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18<br>VGE=20V<br>16 17V 74<br>15V tN<br>14<br>13V<br>11V<br>12<br>9V<br>10 7V<br>8<br>{|<br>6<br>4<br>2<br>fpr.<br>0<br>0 1 2 3 4<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>**----- End of picture text -----**<br>


Figure 6. Typical ( _T_ vj=175°C)=175°C) 

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**----- Start of picture text -----**<br>
Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T vj=25°C) ( T vj=175°C)=175°C)<br>18 3.5<br>Tj=25°C IC=3A<br>Tj=175°C IC=6A<br>IC=12A<br>BJU) = 3.0<br>15<br>|,  fed<br>_<br>=<br>< < 2.5 je<br>Sim) [peeeeeoe] -<br>12<br>uwsone PR/ <x eT_--—<br>2.0<br>3 / eeui tT<br>9<br>E WW<br>Oo a 1.5<br>am—FSe<br>(Oy SSS<br>5 6 1.0<br>|] e Ft ttt yl<br>3<br>0.5<br>Ya PTET TTL<br>0 0.0<br>4 6 8 10 12 14 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter saturation voltage<br>( V CE=10V) a function of junction temperature<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>


( _V_ GE=15V) 

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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
1000 aa 1000<br>a a ee |1 td(off) a  aa aee ee es<br>a ee es I tf eee<br>td(on)<br>tr<br>ee ee Ff<br>a ee | i eee<br>100 o a td(off) ssee eeeee ee 100 ae e eeeee<br>ip)imz= H|1 ttfd(on) aaa aee ee ee ip)=2 aaaECaaee rrr<br>= I tr ee ee ee = aee<br>- S SS a<br>OQ a ee ee ee a ee ee ee ee eee<br>a e e<br>eeeE E eaeweb .<br>2) 10 a ate 2) 10 ee<br>7 (a ee 7 a ss<br>ee a es a es es es<br>ea a a<br>a ee ee ee a eeee<br>a ee ee a ee ee<br>a P| tT tT<br>1 1<br>2 4 6 8 10 12 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, r G=23 Ω , Dynamic test circuit in V GE =15/0V, I C =6A, Dynamic test circuit in<br>Figure E) Figure E)<br>1000 7<br>aa ee<br>a aes a typ.<br>a — min.<br>max.<br>a a E a<br>a] 8 6<br>EF SL<br>po e)<x ——<br>100 td(off) 5<br>ip)uw |1 ttfd(on) poa a a (oe) reRe<br>—= H| tr _a— —]ee ee ee eee 7) ae ——<br>- SS es Wy a ae<br>4<br>Q ee ee ee :: =o — a<br>= ee ee ss<br>ee ee in<br>= a a<br>2)- 10 aa eees re eeee = 3 ><br>are een Ww<br>aa ee se x<br>eseo)<br>2<br>1 1<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 11. 

(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =6A, _r_ G=23 , Dynamic test circuit in Figure E) 

Figure 12. 

( _I_ C=0.11mA) 

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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
1.0 0.8<br>/<br>EEoffon vA/ EEoffon<br>Ets Ets -<br>7 ec<br>7 —<br>oe) 0.8 / _ se<br>0.6<br>n n ae<br>im 7 im eo<br>ip) 7 Op) Lc<br>2 / ie) i<br>@) / @)<br>—! 0.6 7 —!<br>>><br>Z 0.4<br>io /é io2 | | |tar ———<br>0.4<br>2 1 2<br>Ir / L a = Le _—<br>Re / a E — ~<br>= / Za = 0.2 a<br>°. 0.2 AO \ oe on<br>/ WA oo<br>=<br>a<br>2 [a]<br>0.0 0.0<br>0 2 4 6 8 10 12 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, r G=23 Ω , Dynamic test circuit in V GE =15/0V, I C =6A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0.5 0.7<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>0.6<br>5 0.4 El ) | | S L po<br>0.5<br>onnm Lect ao nmn oo a<br>7) _-t7 7) oa<br>0.3<br>> > 0.4 LL<br>2 2<br>0.3<br>0.2<br>x= ae x=<br>oO _— oO _—<br>FE _ FE 0.2 _— _<br>n _— n _<br>0.1<br>° — ° ee<br>0.1<br>0.0 0.0<br>25 50 75 100 125 150 175 300 350 400 450<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =175°C, V GE=15/0V,<br>I C =6A, r G=23 , Dynamic test circuit in I C =6A, r G=23 , Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
16 1000 a<br>120V / /| || Cies eea<br>14 480V / 7 / }iz e CCoesres eeea ee eeeee ee<br>12<br>S f+ a<br>: / pe |<br>K 10 |<br>=/ g i<br>iI 8 Pt <== 100 ai\  a<br>E 9 ee<br>= a a<br>ul < A<br>b 6 ° pA NP<br>s| aee ee ee<br>4<br>2 fit ft | : | .<br>0 10<br>0 10 20 30 40 50 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


Figure 17. Typical ( _I_ C=6A) 

Figure 18. 

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**----- Start of picture text -----**<br>
( V GE<br>**----- End of picture text -----**<br>


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90 14<br>80<br>12<br>Ww —<br>ia 70 1 uw<br>ac© =a 10<br>ad 60<br>8<br>a 50 ZL 2<br>=E<br>OEK<br>E 40 | a) 6<br>O wa<br>a)ocoO 30 ywJ\ fi OO<br>4<br>o (e)<br>(e)L 20 x7p)<br>2<br>10<br>0 0<br>12 14 16 18 20 10 11 12 13 14 15<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C(SC) t SC<br>**----- End of picture text -----**<br>


Figure 19. 

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( V CE 400V, start at T vj=25°C)<br>**----- End of picture text -----**<br>


Figure 20. Short circuit withstand time gate-emitter voltage ( _V_ CE 400V, start at _T_ vj ≤ 150°C) 

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IKD06N60R 

## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
2 1 LHRH<br>M,<br>x“, [|] fe Head 2 Disa<br>1<br>Acre<br>Af A tierra D=0.5 TIS D=0.5<br>cae eg| 0.2 / ost 0.2<br>SHIH A a Sincese eee<br>0.1 0.1<br>=7 UMTateoer 0.05 STAM 2 aERECTTMCT®A 0.05<br>< MA eat TI * eon IATITMTATTE UT<br>Seema eTa 0.02 <s JAid e r TT71 0.02<br>0.01 0.01<br>0.1<br>single pulse single pulse<br>a SP eo 0.1 0<br>D I IA Ae TEE TT Fett ATA<br>Z eeea alle re (ll Z TN<br>Sag 22)yi Af Z| Zl rg | Zeer TTT a AT aml<br>TIAA all °C I T a<br>i: 1 2 3 4 i: 1 2 3 4<br>Wo ri[K/W]: zee 0.1032 0.7299 0.5682 a 0.0638  am 2 0 ri[K/W]: 1.0958 1.6643 a 0.7461 0.0827<br>τ i[s]: 7.9E-5 4.0E-4 1.8E-3 0.0307 τ i[s]: 7.9E-5 2.8E-4 1.7E-3 0.02494<br>tS a ul | a<br>0.01 0.01<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 21. IGBT transient thermal impedance as a Figure 22. Diode transient thermal impedance as a<br>function of pulse width (see page 4) function of pulse width (see page 4)<br>( D = t p/T) ( D = t p/T)<br>200 1.0<br>Tj=175°C, IF = 6A Tj=175°C, IF = 6A<br>Tj=25°C, IF = 6A Tj=25°C, IF = 6A<br>pf<br>—== a 0.8<br>150<br>kb I<br>>O<br>0.6<br>3<br>100 IN :<br>ie)wi 4Lu 0.4<br>aa n _——<br>Wu ~<br>50<br>0.2<br>| 0 Pt |] | 0.0<br>500 600 700 800 900 500 600 700 800 900<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 23. Typical reverse recovery time as a function Figure 24. Typical reverse recovery charge as a<br>of diode current slope function of diode current slope<br>( V R=400V) ( V R=400V)<br>c)th(j- c)th(j-<br>Z Z<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
20 0<br>Tj=175°C, IF = 6A Tj=175°C, IF = 6A<br>Tj=25°C, IF = 6A Tj=25°C, IF = 6A<br>18<br>raE <,g -100<br>na 16 va<br>=) {o)<br>> oa<br>ing 3°<br>Wwfo)im 14 a %L& -200 —— a<br>nd a<br>2 -“"| 8<br>12<br>ow- —_ a a ; -300<br>ff eee<br>10<br>8 -400<br>500 600 700 800 900 500 600 700 800 900<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 25. Typical reverse recovery current as a Figure 26. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>18 2.5<br>IF=3A<br>IF=6A<br>16 Tj=25°C, UG=0V IF=12A<br>Tj=175°C, UG=0V<br>14<br>=a 12 / Wwg 2.0<br>igD 10 7 aO<br>s) ><br>ea 8 Q a<br>< | Lf ra —-<br>= } <<br>wr | =<br>fe) 6 (ag 1.5<br>tt tet 2<br>4<br>2 TAL rr<br>0 1.0<br>0 1 2 3 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I rr<br>/dt<br>rr<br>I rr dI<br>I F V F<br>**----- End of picture text -----**<br>


Figure 27. 

Figure 28. 

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IKD06N60R 

**==> picture [86 x 38] intentionally omitted <==**

## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## Package Drawing PG-TO252-3 

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MILLIMETERS<br>DIM<br>MIN MAX<br>A 2.16 2.41<br>A1 0.00 0.15<br>b 0.64 0.89<br>b2 0.65 1.15<br>b3 4,95 5.50<br>c 0.46 0.61<br>c2 0.40 0.98<br>D 5.97 6.22<br>D1 5.02 5.84<br>E 6.35 6.73<br>E1 4.32 5.21<br>e 2.29 (BSC)<br>e1 4.57 (BSC)<br>N 3<br>H 9.40 10.48<br>L 1.18 1.78<br>L3 0.89 1.27<br>L4 0.51 1.02<br>**----- End of picture text -----**<br>


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DOCUMENT NO.<br>Z8B00003328<br>SCALE 0<br>2.5<br>0 2.5<br>5mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>05-02-2016<br>REVISION<br>06<br>**----- End of picture text -----**<br>


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IKD06N60R 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>


Figure C. **Definition of diode switching characteristics** 

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t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Revision�History** 

IKD06N60R 

## **Revision:�2014-03-12,�Rev.�2.5** 

Previous Revision 

|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.2|2010-01-12|-|
|2.1|2011-01-17|Release of final datasheet|
|2.2|2013-02-19|Changepackage|
|2.3|2013-12-10|Neu value ICES max limit at 175°C|
|2.4|2014-02-26|Without PB free logo|
|2.5|2014-03-12|Storage temp-55...+150°C|



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V�2.5 2014-03-12 

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## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/IKD06N60RATMA1/igbt-6-a-21-v-100-w-600-to-252-dpak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ikd06n60ratma1/igbt-diode-600v-4a-to252/dp/1832340)
---

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