# IGBT, 8 A, 2 V, 36.6 W, 600 V, TO-252 (DPAK), 3 Pins

![Product image](https://novapart.co/image/farnell:3648089RL/)

**URL**: https://novapart.co/products/IKD04N60RC2ATMA1/igbt-8-a-2-v-366-w-600-to-252-dpak-3-pins
**SKU**: IKD04N60RC2ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.2490
**Stock**: 1000+
**Lead Time**: 141 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP RC |
| Power Dissipation | 36.6W |
| Transistor Mounting | Surface Mount |
| Dc Collector Current | 8A |
| Power Dissipation Pd | 36.6W |
| Transistor Case Style | TO-252 (DPAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 8A |
| Collector Emitter Voltage Max | 600V |
| Automotive Qualification Standard | - |
| Collector Emitter Voltage V(Br)Ceo | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Saturation Voltage Vce(On) | 2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3648089RL/)

IKD04N60RC2 

## TRENCHSTOP[TM] 

## **Features:** 

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TRENCHSTOP [TM]<br>**----- End of picture text -----**<br>


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http://www.infineon.com/rc-d2<br>**----- End of picture text -----**<br>


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|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKD04N60RC2|600V|4A|2V|175°C|K4DRC2|PG-TO252-3|



Datasheet www.infineon.com 

2020-09-28 

IKD04N60RC2 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||8.0<br>5.6|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||12.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||12.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||4.6<br>2.4|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||12.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±25|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||3|µs|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||36.6<br>18.3|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,1)<br>junction - case|_R_th(j-c)||-|-|4.10|K/W|
|Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|10.10|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|75|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|50|K/W|



1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=4.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.00<br>2.40|2.30<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=4.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.90<br>1.95|2.20<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.45mA,_V_CE=_V_GE|4.3|5.0|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|25<br>2500|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=4.0A|-|2.0|-|S|
|Integratedgate resistor|_r_G|||none||Ω|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=1000kHz|-|180|-|pF|
|Output capacitance|_C_oes||-|10|-||
|Reverse transfer capacitance|_C_res||-|7|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=4.0A,<br>_V_GE=15V|-|24.0|-|nC|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=4.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=49.0Ω,_R_G(off)=49.0Ω,<br>_L_σ=30nH,_C_σ=32pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|4|-|ns|
|Rise time|_t_r||-|9|-|ns|
|Turn-off delaytime|_t_d(off)||-|90|-|ns|
|Fall time|_t_f||-|41|-|ns|
|Turn-on energy|_E_on||-|0.10|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.14|-|mJ|



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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** 

|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=4.0A,<br>_di_F_/dt_=681A/µs|-|80|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|148.00|-|nC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|5.7|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-110|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=4.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=49.0Ω,_R_G(off)=49.0Ω,<br>_L_σ=30nH,_C_σ=32pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|4|-|ns|
|Rise time|_t_r||-|10|-|ns|
|Turn-off delaytime|_t_d(off)||-|98|-|ns|
|Fall time|_t_f||-|47|-|ns|
|Turn-on energy|_E_on||-|0.13|-|mJ|
|Turn-off energy|_E_off||-|0.05|-|mJ|
|Total switchingenergy|_E_ts||-|0.18|-|mJ|



**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=4.0A,<br>_di_F_/dt_=500A/µs|-|108|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|254.00|-|nC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|6.4|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-87|-|A/µs|



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## TRENCHSTOP[TM] 

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40 8<br>35 Site 7<br>e EA<br>30 6<br>Wee EN<br>25 5<br>PP Ne EN<br>20 4<br>EN EN<br>15 3<br>cae SERN pt Ne<br>ee<br>10 2<br>PIN EN<br>5 1<br>0 PpEN CULE 0 EN<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Figure 2.<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ T vj ≤ 175°C)<br>12.0 12.0<br>VGE=20V VGE=20V<br>7 ]<br>17V 17V<br>10.0 15V 10.0 15V<br>13V 13V<br>11V 11V<br>8.0 8.0<br>9V 9V<br>7V 7V<br>6.0 6.0<br>4.0 4.0<br>2.0 2.0<br>PFO LAP<br>0.0 0.0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Figure 4.<br>( T vj=25°C) ( T vj=175°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] 

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12<br>Tj=25°C<br>Tj=175°C /<br>= [|] / /<br>10<br>/<br>x<br>8<br>x<br>a 6 f<br>4<br>fe) f<br>2<br>0<br>2 4 6 8 10 12 14<br>V GE , GATE-EMITTER VOLTAGE [V]<br>I C<br>**----- End of picture text -----**<br>


Figure 5. Typical ( _V_ CE=20V) 

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5.0<br>IC=2A<br>4.5 IC=4A<br>IC=8A<br>z 4.0 ee<br>6 =<br>4 3.5<br>3.0<br>ow<br>Ee 2.5<br>ad<br>2.0<br>O<br>1.5<br>O<br>1.0<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>CEsat<br>V<br>**----- End of picture text -----**<br>


Figure 6. 

( _V_ GE=15V) 

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td(off) td(off)<br>tf tf<br>td(on) td(on)<br>tr tr<br>100 oe 100 a ss et es es<br>e e a es ee ee ee ee<br>ry Se a a a a<br>= poa Se eeeeee ryes poee Teee ee ee ee<br>” a ee ” P|<br>--= {| |vpn} pA<br>9foo LZ<br>Zz ~<br>== 10 poa hes == 10 poa es se eeeee La<br>n ae a ©) a a PS<br>- po - a ee ee re ee<br>a ee a ee es ee eo<br>a se ee ee a ee ee<br>a Pde| of | ft |<br>1 1<br>2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, R G=49 Ω , Dynamic test circuit in V GE =15/0V, I C =4A, Dynamic test circuit in<br>Datasheet Figure E) 7 Figure E)<br>t t<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
7<br>td(off) typ.<br>tf<br>td(on)<br>tr 6<br>I fo :<br>Oo<br><x<br>100 e a e FE<br>a 5<br>my a a ©)><br>5 a es Q<br>” po [OO] OT OG<br>> Jf | 4<br>i9 | | i | df WwW<br><= -<br>L<br>3<br>= 10 e s a<br>naa<br>-<br>a uw<br>a ss | 2<br>Oo<br>Pees eT :<br>1<br>1 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a function<br>junction temperature of junction temperature<br>(inductive load, V CE =400V, V GE =15/0V, I C=4A, ( I C=0.45mA)=0.45mA)<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


( _I_ C=0.45mA)=0.45mA) 

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R G=49<br>**----- End of picture text -----**<br>


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0.5 0.30<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>0.25<br>0.4<br>on , on<br>WwW o W -"<br>1p)(op) aa 1p)icp) 0.20 - a7<br>oi 0.3 ? aaoO o--"<br>> “ ><br>O ? O<br>oe a 2 oe<br>Ww ra a“ Ww 0.15 ‘<br>Zz a a Zz _—<br>ul ? a ul -—<br>Zz) 0.2 o ? 7 ed Zz) -— -<br>: “Tee : 0.10<br>= and =<br>= ae a =<br>(op) o* 2 (op)<br>a ° a” .<br>0.1<br>0.05<br>0.0 0.00<br>2 3 4 5 6 7 8 0 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, R G=49 Ω , Dynamic test circuit in V GE =15/0V, I C =4A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
0.30 0.30<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>0.25 0.25<br>2<br>E E “<br>ie) (a) /<br>Ww Lu ¢<br>io)7) 0.20 7)8 0.20 Y ?<br>9 aa , a<br>0.15 0.15<br>ff ff y “ a<br>g=r 0.10 _-— gam 0.10 oa 2 a a<br>5 5 o ys Pa<br>-<br>0.05 0.05<br>0.00 0.00<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>


Figure 13. 

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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=15/0V,<br>I C =4A, R G=49 , Dynamic test circuit in<br>Figure E)<br>**----- End of picture text -----**<br>


Figure 14. 

(inductive load, _T_ vj =175°C, _V_ GE=15/0V, _I_ C =4A, _R_ G=49 , Dynamic test circuit in Figure E) 

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16 1000 a a<br>14 ——— VV CCCC =-= 480V120V / / ti|I CCCiesoesres aaaeeaa ee<br>a ee es<br>yo p o<br>=s 12 fy r [ttte<br>100<br>F 10 & Ca ee<br>S$ fy O ee<br>W 8 Ty 2 a<br>i =O Se‘  ee<br>=<br>: 6 © >><br><x 10 a a<br>.<br>4 | ee<br>2<br>a<br>0 1<br>0 5 10 15 20 25 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=4A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] 

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40 10<br>Pt|te<br>|<br>= 35 P| | f | dy _ PT TT ET<br>x= 7 = Te<br>bE zg. el<br>D=0.5<br>g 30 4 |} COU7<br>0.2<br>1 0.1<br>S 25 va 7 Ml 0.05<br>O / —_G }p—_|RS ff eetae tee eee<br>5 aa<br>rf rd Pager 0.02 CO<br>4 7 pt eer 0.01 LTT<br>20<br>fe = me fe ee single pulse LUT<br>- Fa Zo = Ae mill<br>3 ee) Bae) aaa<br>2 15 | : Vag aw<br>ae0 :a 0.1 PVMiiealllApalieae<br>b aa) — a |<br>ad 10 2 pe ari R, rR, TH<br>oO5 sF meaAA e  A aeelieee GHG -- inlil<br>.<br>° e n<br>5<br>PTAA [AI] [E] [TET] eee [PTT] ELTeel<br>i: 1 2 3 4 5<br>ri[K/W]: 0.18941 3.1551 0.74685 0.046332 8.4E-4<br>τ i[s]: 9.4E-5 5.2E-4 2.4E-3 0.07379975 4.060063<br>0 Pt tt tl 0.01 VA (i|<br>12 13 14 15 16 17 18 1E-6 1E-5 1E-4 0.001 0.01<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical short circuit collector current as a Figure 18. IGBT transient thermal resistance<br>function of gate-emitter voltage ( D = t p/T)<br>( V CE 400V, T vj 150°C)<br>200<br>Tj=25°C, IF = 4A<br>10 Tj=175°C, IF = 4A<br>Tin EAaTTT<br>175<br>NaWw ase D=0.5 |<br>9 Hea TH _ 150<br>0.2<br>< a ee ll<br>0.1<br>a acm<br>2a 1 eoFoILeee,geaeee ee 0.050.02 = me 125 Ls \<br>ESY erPT ee 0.01 COi oO5 100 '<br>Wi ee eee ee single pulse Wy<br>F a 7A atl zal Nex<br>6z7 0.1 meeLe oatlWray(AMUN 00ae NT | I) rte& 75 SS—~<br>Z SSeeeeh ae cil teat ae 50 Sss.)<br>s ee | —7 Hf - ‘<br>oe Coe oo il “2<br>~ aPA|I PT || cy ehre, costes |i<br>FAY) OC 25<br>i: 1 2 3 4 5<br>ri[K/W]: 1.8525 6.3856 1.8096 0.084955 8.5E-4<br>τ i[s]: 4.1E-5 2.2E-4 1.4E-3 0.03900088 4.088283<br>"|<br>0.01 0<br>(| | ee<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 300 600 900 1200 1500 1800 2100 2400 2700<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 19. Diode transient thermal impedance as a Figure 20. Typical reverse recovery time as a function<br>function of pulse width of diode current slope<br>( D = t p/T) ( V R=400V)<br>I C(SC) Z c)th(j-<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] 

**==> picture [476 x 285] intentionally omitted <==**

**----- Start of picture text -----**<br>
350 20<br>Tj=25°C, IF = 4A Tj=25°C, IF = 4A<br>Tj=175°C, IF = 4A 18 Tj=175°C, IF = 4A<br>300<br>e a r 16 PT T<br>Ooi -— — x TT Leé<br>Lu 7 - Zz- 77<br>250<br>14<br>O<br>12<br>PPL)>O 200 | Lye| Ee<br>- mo EL 10<br>Oo2p) :Ww iw<br>a 150 oOeae 8<br>uw: bfi 6 |<br>rf 100 > / La<br>; i<br>4<br>Saaeeeee °<br>50<br>2<br>0 0<br>300 600 900 1200 1500 1800 2100 2400 2700 300 600 900 1200 1500 1800 2100 2400 2700<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rr<br>**----- End of picture text -----**<br>


Figure 21. Typical function ( _V_ R=400V) 

Figure 22. 

( _V_ R=400V) 

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**----- Start of picture text -----**<br>
0<br>Tj=25°C, IF = 4A<br>-100 Tj=175°C, IF = 4A<br>-200<br>Ne<br>E N<br>-300<br>“ \<br>2 \ <<br>& -400<br>%<br>2 N a<br>-500<br>x© \S ingre)Q<br>8 s s<br>ro -600 Ss<br>o oeiD<br>8 iD<br>-700<br>-800<br>-900<br>EERE<br>-1000<br>300 600 900 1200 1500 1800 2100 2400 2700<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
12<br>Tj=25°C<br>Tj=175°C<br>10<br>i<br>E 8 f<br><<br>xa<br>6<br>re)QQ<br>ingre)Q /i<br>s /<br>Ss<br>oeiD 4 i;<br>2<br>e= ae<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>V F , FORWARD VOLTAGE [V]<br>I F<br>**----- End of picture text -----**<br>


Figure 23. 

Figure 24. 

( _V_ R=400V) 

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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
3.5<br>IF=2A<br>IF=4A<br>IF=8A<br>3.0<br>2.5<br>Oo<br><x<br>Kk<br>i 2.0<br>><br>Q<br>a<br><x<br>1.5<br>[a<br>e)<br>LL<br>1.0<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>


Figure 25. 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## Package Drawing PG-TO252-3 

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MILLIMETERS<br>DIM<br>MIN MAX<br>A 2.16 2.41<br>A1 0.00 0.15<br>b 0.64 0.89<br>b2 0.65 1.15<br>b3 4,95 5.50<br>c 0.46 0.61<br>c2 0.40 0.98<br>D 5.97 6.22<br>D1 5.02 5.84<br>E 6.35 6.73<br>E1 4.32 5.21<br>e 2.29 (BSC)<br>e1 4.57 (BSC)<br>N 3<br>H 9.40 10.48<br>L 1.18 1.78<br>L3 0.89 1.27<br>L4 0.51 1.02<br>**----- End of picture text -----**<br>


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DOCUMENT NO.<br>Z8B00003328<br>SCALE 0<br>2.5<br>0 2.5<br>5mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>05-02-2016<br>REVISION<br>06<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>


Figure C. **Definition of diode switching characteristics** 

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t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications 

## **Revision�History** 

IKD04N60RC2 

## **Revision:�2020-09-28,�Rev.�2.1** 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2020-09-28|Final data sheet|



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## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/IKD04N60RC2ATMA1/igbt-8-a-2-v-366-w-600-to-252-dpak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ikd04n60rc2atma1/igbt-600v-8a-36-6w-to-252/dp/3648089RL)
---

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