# IGBT, 6.5 A, 2.2 V, 53.6 W, 600 V, TO-252 (DPAK), 3 Pins

![Product image](https://novapart.co/image/farnell:3585350RL/)

**URL**: https://novapart.co/products/IKD03N60RFATMA1/igbt-65-a-22-v-536-w-600-to-252-dpak-3-pins
**SKU**: IKD03N60RFATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.2620
**Stock**: 10+
**Lead Time**: 141 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP RC |
| Power Dissipation | 53.6W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-252 (DPAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 6.5A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 2.2V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3585350RL/)

## IGBT 

IKD03N60RF TRENCHSTOP[TM] 

## IKD03N60RF 

## TRENCHSTOP[TM] 

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Features:<br>TRENCHSTOP [TM] Reverse Conducting (RC)<br>applications offering<br>¢ Optimized Eon, Eoff and Qrr for low switching<br>¢ Operating range of 4 to 30kHz<br>* Smooth switching performance leading to low<br>* Very tight parameter distribution<br>* Maximum junction temperature 175°C<br>¢ Short circuit capability of 5us<br>¢ Best in class current versus package size<br>* Qualified according to JEDEC for target<br>¢ Pb-free lead plating; ROHS compliant (solder<br>http://www.infineon.com/igbt/<br>Complete product spectrum and PSpice Models:<br>Applications:<br>**----- End of picture text -----**<br>


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|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKD03N60RF|600V|2.5A|2.2V|175°C|K03R60F|PG-TO252-3|



Datasheet www.infineon.com 

2016-05-10 

IKD03N60RF 

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## TRENCHSTOP[TM] �RC-Drives�Fast�Series 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 

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## TRENCHSTOP[TM] �RC-Drives�Fast�Series 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_C||6.5<br>6.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||7.5|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||7.5|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||6.3<br>3.9|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||7.5|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_c=25°C|_P_tot||53.6|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,1)<br>junction - case|_R_th(j-c)||-|-|2.80|K/W|
|Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|6.80|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|75|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|50|K/W|



1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. 

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## TRENCHSTOP[TM] �RC-Drives�Fast�Series 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=2.5A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.20<br>2.30|2.50<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=2.5A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.10<br>2.00|2.40<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.05mA,_V_CE=_V_GE|4.3|5.0|5.7|V|
|Zero gate voltage collector current1)|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>1000|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=2.5A|-|1.3|-|S|
|Integratedgate resistor|_r_G|||none||Ω|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|200|-|pF|
|Output capacitance|_C_oes||-|13|-||
|Reverse transfer capacitance|_C_res||-|7|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=2.5A,<br>_V_GE=15V|-|17.1|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=25°C|-|23|-|A|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=2.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=68.0Ω,_R_G(off)=68.0Ω,<br>_L_σ=60nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E|-|10|-|ns|
|Rise time|_t_r||-|8|-|ns|
|Turn-off delaytime|_t_d(off)||-|128|-|ns|
|Fall time|_t_f||-|93|-|ns|
|Turn-on energy|_E_on||-|0.05|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.09|-|mJ|



1) Not subject to production test - verified by design/characterization 

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## TRENCHSTOP[TM] �RC-Drives�Fast�Series 

**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** 

|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=2.5A,<br>_di_F_/dt_=470A/µs|-|31|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.06|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|3.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-196|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=2.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=68.0Ω,_R_G(off)=68.0Ω,<br>_L_σ=60nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E|-|9|-|ns|
|Rise time|_t_r||-|9|-|ns|
|Turn-off delaytime|_t_d(off)||-|142|-|ns|
|Fall time|_t_f||-|123|-|ns|
|Turn-on energy|_E_on||-|0.08|-|mJ|
|Turn-off energy|_E_off||-|0.06|-|mJ|
|Total switchingenergy|_E_ts||-|0.14|-|mJ|



**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=2.5A,<br>_di_F_/dt_=470A/µs|-|66|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.19|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|6.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-125|-|A/µs|



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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
2.5 10 a<br>ee el<br>pe<br>Bill et 4 TT<br>2.0 S|TIEN | |Aeel<br>we |  lll nt - FA<br>SACU<br>}h Pi| fT<br>1.5 mBniiil E N LU<br>not for linear use<br>5 mill =) i—<br>Ta=55°C<br>| © 1 [TM<br>O _<br>Ee O a<br>O Ee ee eee el<br>1.0<br>mm ail \ O a e e<br>a \ mma a | eel<br>, CHET<br>0.5<br>a |<br>0.0 0.1<br>0.1 1 10 100 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T vj 175°C; V GE=15V)<br>( T vj ≤ 175°C, T a =55°C, D =0.5, V CE=400V,<br>V GE =0/15V, R G=68 Ω , PCB mounting, 6cm2<br>Cu, Ptot=2,4W)<br>60 7<br>6<br>50<br>limited by bond wire<br>[—<br>5<br>40<br>3 ; \<br><xo oaa) 4<br>30<br>3<br>or= Smm<br>4 20 5<br>2<br>10<br>1<br>0 0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 3. Power dissipation as a function of case Figure 4. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br>


Datasheet 

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## ~~—RG-DrivesFastSeries~~ TRENCHSTOP[TM] = 

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**----- Start of picture text -----**<br>
9 9<br>VGE = 20V VGE = 20V<br>8 ee 8 ee<br>17V 17V<br>15V 15V<br>7 7<br>SW Wy<br>13V 13V<br>6 6<br>11V 11V<br>o {? o<br>9V 9V<br>5 5<br>7V 7V<br>ESS YY<br>4 4<br>3 3<br>2 2<br>1 1<br>0 F R 0 | AS<br>0 1 2 3 4 0 1 2 3 4<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE co covomennnen VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T vj=25°C) ( T vj=175°C)<br>9 4.0<br>Tvj  = 25°C IC = 0.6A<br>Tvj  = 175°C IC = 1A<br>8 3.5 IC = 2.5A<br>IC = 5A<br>ET]. Pv<br>7<br>T ye 3.0 e ee<br>6<br>e A e ee<br>2.5<br>5<br>pt I<br>2.0<br>4<br>jeer on||sasnaee<br>1.5<br>ae 3<br>1.0<br>2<br>1 / LL 0.5<br>Yi EE<br>0 | ft | 0.0 ELE<br>4 6 8 10 12 14 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 7. Figure 8.<br>( Typical V CE=10V)  transfer characteristic rypicat on of junction tompersture voltage as<br>( V GE=15V)<br>I C I C<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>


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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
td(off)<br>tf<br>td(on) —<br>NL tr |<br>PX} Ee FEE<br>SSE] a<br>100<br>100 | SSS— =o S p eee r<br>g Cc td(off) f e<br>tf<br>Lu td(on) Lu<br>tr<br>#@ fe Ft ee Eee<br>Z2e |, ||. f{[jJe |ety<br>dé EE ees<br>PP ] Zz 10 Le<br>60° 10 edaSS| me PEeeeeeee<br>ae aaaee ee ee peti aoT oTa tT ET<br>SERRE Eee<br>1 1<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 20 30 40 50 60 70 80 90 100 110 120<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistance<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =0/15V, R Gon=68 Ω ; R Goff=68 Ω , dynamic V GE =0/15V, I C =2,5A, dynamic test circuit in<br>test circuit in Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
7<br>[— t — d(off) | | typ.<br>tf min.<br>td(on) max.<br>tr<br>= ff - 6 |= |<br>[aA<br>a e e<br>100<br>ee ee ee<br>p o I ~~<br>re ae<br>a aa ~SL LL<br>aa a es a 5 ———<br>” a eeeeee er — ek<br>- Lu<br>Ss {| | | | | | § To ——<br>es ee 4 ee<br>g z= CL |<br>5<br>10<br>aeeee ee 3 =<br>- a G7<br>a ss |<br>Po<br>eeee ee ee ee ee”)<br>2<br>1 1<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 11. 

(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =2,5A, _R_ Gon=68 Ω ' _R_ Goff=68 Ω , dynamic circuit in Figure E) 

Figure 12. 

( _I_ C=0,05mA) 

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## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
0.25<br>Eoff<br>Eon<br>Ets<br>=" 7<br>mp) 0.20 7<br>& 7<br>“ Ve<br>nm /<br>7)<br>o 7<br>—! 0.15<br>OQ /<br>or 4<br>uw 7 Y<br>Zz y<br>0.10<br>2 “<br>© WY L<br>5 Areas<br>0.05<br>OF7 a<br>0.00<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>I C , COLLECTOR CURRENT [A]<br>E<br>**----- End of picture text -----**<br>


Figure 13. 

(inductive load, _T_ vj =175°C, _V_ CE=400V, _V_ GE =0/15V, _R_ Gon=68 Ω ; _R_ Goff=68 Ω , test circuit in Figure E) 

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**----- Start of picture text -----**<br>
0.20<br>Eoff<br>0.18 Eon<br>Ets<br>ELT a<br>ap) 0.16 Pa<br>& “7<br>op) peat<br>nm 0.14 4<br>7p) _<br>o Lar<br>—! 0.12<br>O a<br>or<br>uw 0.10 P<br>Zz Ele<br>0.08<br>=<br>e 0.06 — i<br>ane<br>0.04<br>0.02<br>PELLET EEL LEE<br>0.00<br>10 20 30 40 50 60 70 80 90 100 110 120<br>R G , GATE RESISTANCE [ Ω ]<br>Figure 14. Typical switching energy losses as a<br>function of gate resistance<br>(inductive load, T vj =175°C, V CE=400V,<br>V GE =0/15V, I C =2,5A, dynamic test circuit in<br>Figure E)<br>E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0.16 0.18<br>Eoff Eoff<br>Eon Eon<br>0.14 Ets 0.16 Ets<br>0.14<br>:& 0.12 eT offlaw).cat = F |p1pe<br>nm a nm “<br>7)(op); pbk“7eo 7)(op); 0.12 7 Z -<br>0.10<br>aa] Lot aa] Y<br>> - > 4<br>0.10<br>0.08<br>ai _— a 0.08 7 =<br>) a e) “ 2<br>0.06<br>‘ — _—— z a -<br>=Pe > = - xr 0.06 4 a ——___|<br>0.04<br>fotT |é ot<br>0.04<br>0.02<br>0.02<br>0.00 0.00<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>


Figure 15. 

(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =2,5A, _R_ Gon=68 Ω ' _R_ Goff=68 Ω , dynamic circuit in Figure E) 

Figure 16. 

(inductive load, _T_ vj =175°C, _V_ GE=0/15V, _I_ C =2,5A, _R_ Gon=68 Ω ' _R_ Goff=68 Ω , dynamic circuit in Figure E) 

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IKD03N60RF 

## TRENCHSTOP[TM] 

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**----- Start of picture text -----**<br>
18 ss 1000 a a<br>— VV CCCC =- 120V | 1I CCiesoes a a a a eea eea<br>16 Cres<br>| . I a ee ee ee<br>14 {| a a  e e<br>=<br>/<br>12 100<br>ke Qa a QQ<br>i J — a<br>re) / Ww a a<br>Sna 10 y, / oOz DSa es<br>8<br>: — a<br>Ww < NN ed ee<br>x 6 10<br>a<br>i) . Po<br>/ a es<br>4 a ee<br>2<br>0 1<br>0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


Figure 17. Typical ( _I_ C=2,5A) 

Figure 18. 

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**----- Start of picture text -----**<br>
( V GE<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
50 12<br>S 45 Z 10 PRE~<br>: EE EL Ly<br>40<br>aciep—Ys PIN\ FT | | | yy<br>: 35 =<br>8<br>| 47 Fe FEN TTL<br>SB ral<br>; 30 fe ef KN<br>oO WA 7p)<br>3: 25 ZO =ef) 6 QI\<br>©5 20 |pe}tt tg EL UN<br>g ZO 3<br>4<br>Piet 15 | 7 tt eKés \<br>Ee ke<br>(e)2 10 rTPTT) -_85 PteEE KE\<br>2<br>= 5 TTT TT PPL EN<br>0 0<br>pt eee ey EERE EERE<br>12 13 14 15 16 17 18 19 20 10 11 12 13 14 15 16 17 18 19<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C(SC) t SC<br>**----- End of picture text -----**<br>


Figure 19. 

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**----- Start of picture text -----**<br>
( V CE 400V, start at T vj=25°C)<br>**----- End of picture text -----**<br>


Figure 20. 

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**----- Start of picture text -----**<br>
( V CE 400V, start at T vj=150°C)<br>**----- End of picture text -----**<br>


11 

Datasheet 

2016-05-10 

IKD03N60RF 

TRENCHSTOP[TM] 

**==> picture [476 x 621] intentionally omitted <==**

**----- Start of picture text -----**<br>
= 1 secHATA Lt} Se aer este esel 7 40ME<br>uw A uw LY Vi, ra |<br>) CCI CTI aT SST D = 0.5 | re) YY TAHA UAT Af | lll D = 0.5<br>Zzrn |Eh/A 0.20.1 | 1 eA=H | YI itn 0.20.1<br>= eT toaah aa<br>2 TI 0.05 2 0.05<br>0.02 0.02<br>0.01 0.01<br>= NB S PrN CORP Mera HITT<br>ge 0.1 ae single pulse IT ELC ee single pulse<br>=6 IMMAEHPrecet = CMeea<br>a a  ( er HHa 0.1 allwipeAt | Ivip |‘il<br>B PTT rTM Leer ec TPT Gy Eee<br>2 a e Z zm Hl 2 ET eee CCETTE Ril<br>s a 20 --|l| 3 A -- |l|<br>ae 20<br>a le  A<br>a a / Biiiiimniiimni<br>ST LATA ETVTIN TIN LUT LMT TATU<br>i: 1 2 3 4 5 6 7 i: 1 2 3 4 5 6 7<br>ri[K/W]: 0.015751 1.14785 1.341315 0.237182 0.041914 6.2E-3 2.2E-3 ri[K/W]: 0.600659 4.018125 1.846211 0.289559 0.043754 6.0E-3 2.1E-3<br>τ i[s]: 1.2E-5 2.3E-4 1.1E-3 6.0E-3 0.047561 0.288161 1.246755 τ i[s]: 4.2E-5 1.9E-4 1.1E-3 6.1E-3 0.048469 0.301349 1.300555<br>0.01 0.01<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 21. IGBT transient thermal impedance as a Figure 22. Diode transient thermal impedance as a<br>function of pulse width (see page 4) function of pulse width (see page 4)<br>( D = t p/T) ( D = t p/T)<br>80 ee 0.20<br>Tvj  = 25°C, IF = 2.5A<br>Tvj  = 175°C, IF = 2.5A 0.18<br>[pe] ELL<br>70<br>\ —<br>o> ) | ey<br>0.16<br>oe<br>60<br>ze + et<br>0.14<br><PP 50 ON : ee TTvjvj  = 25°C, I  = 175°C, IF = 2.5AF = 2.5ATvjvj  = 25°C, I  = 175°C, IF = 2.5AF = 2.5Avjvj  = 25°C, I  = 175°C, IF = 2.5AF = 2.5Avj  = 25°C, I  = 175°C, IF = 2.5AF = 2.5A  = 25°C, I  = 175°C, IF = 2.5AF = 2.5A  = 175°C, IF = 2.5AF = 2.5AF = 2.5AF = 2.5A = 2.5AF = 2.5AF = 2.5A = 2.5A<br>0.12<br>ee 40 0.10<br>: oe eee<br>0.08<br>po 30 Le ti<br>0.06<br>[7S Ler<br>20<br>0.04<br>Saaeeenn —<br>10<br>0.02<br>0 0.00<br>400 500 600 700 800 900 1000 400 500 600 700 800 900<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>c)th(j- c)th(j-<br>Z Z<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0.20<br>0.18<br>ELL<br>—<br>| ey<br>0.16<br>et<br>0.14<br>ee TTvjvj  = 25°C, I  = 175°C, IF = 2.5AF = 2.5ATvjvj  = 25°C, I  = 175°C, IF = 2.5AF = 2.5Avjvj  = 25°C, I  = 175°C, IF = 2.5AF = 2.5Avj  = 25°C, I  = 175°C, IF = 2.5AF = 2.5A  = 25°C, I  = 175°C, IF = 2.5AF = 2.5A  = 175°C, IF = 2.5AF = 2.5AF = 2.5AF = 2.5A = 2.5AF = 2.5AF = 2.5A = 2.5A<br>0.12<br>0.10<br>eee<br>0.08<br>ti<br>0.06<br>Ler<br>0.04<br>—<br>0.02<br>0.00<br>400 500 600 700 800 900 1000<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>rr<br>Q<br>**----- End of picture text -----**<br>


Figure 23. Typical of diode ( _V_ R=400V) 

Figure 24. 

( _V_ R=400V) 

12 

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2016-05-10 

IKD03N60RF 

## TRENCHSTOP[TM] 

**==> picture [476 x 643] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 ee | 0 es<br>Tvj  = 25°C, IF = 2.5A Tvj  = 25°C, IF = 2.5A<br>Tvj  = 175°C, IF = 2.5A Tvj  = 175°C, IF = 2.5A<br>9 TS<br>| yo Z -100 |<br><x 7 Ed aN<br>8<br>5 Zz<br>rd 7 7 7 \<br>C 7 Oo -200 \<br>7 ix<br>O > 2 NOS<br>> 6 Za tu -300<br>Oo<br>a 5 x<br>-400<br>ef a <Q XY<br>oo<br>4<br>| s nN<br>K<br>-500<br>3<br>2 -600<br>400 500 600 700 800 900 1000 400 500 600 700 800 900 1000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 25. Typical reverse recovery current as a Figure 26. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>9 2.8<br>Tvj  = 25°C, VGE = 0V<br>8 Tvj  = 175°C, VGE = 0V 2.6<br>eG<br>7 SY ee 2.4 e I e F = 0.6A ee<br>IF = 1A<br>ef | IF = 2.5A<br>EK 6 Wi fe 2.2 ief IF = 5A o<br>si LP Ww<br>: gS for<br>re)5 5 y oO> 2.0<br>rat 4 aa / Ae raQ<x 1.8 et tt ft tf<br>& ©<br>3 1.6<br>" / ‘LET<br>2 1.4<br>1 1.2<br>7<br>0 1.0<br>0 1 2 3 4 0 25 50 75 100 125 150 175<br>V F ,FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>I F V F<br>**----- End of picture text -----**<br>


Figure 27. 

Figure 28. 

13 

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2016-05-10 

IKD03N60RF 

**==> picture [86 x 38] intentionally omitted <==**

## TRENCHSTOP[TM] �RC-Drives�Fast�Series 

## Package Drawing PG-TO252-3 

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**----- Start of picture text -----**<br>
MILLIMETERS<br>DIM<br>MIN MAX<br>A 2.16 2.41<br>A1 0.00 0.15<br>b 0.64 0.89<br>b2 0.65 1.15<br>b3 4,95 5.50<br>c 0.46 0.61<br>c2 0.40 0.98<br>D 5.97 6.22<br>D1 5.02 5.84<br>E 6.35 6.73<br>E1 4.32 5.21<br>e 2.29 (BSC)<br>e1 4.57 (BSC)<br>N 3<br>H 9.40 10.48<br>L 1.18 1.78<br>L3 0.89 1.27<br>L4 0.51 1.02<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
DOCUMENT NO.<br>Z8B00003328<br>SCALE 0<br>2.5<br>0 2.5<br>5mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>05-02-2016<br>REVISION<br>06<br>**----- End of picture text -----**<br>


14 

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IKD03N60RF 

**==> picture [86 x 38] intentionally omitted <==**

## TRENCHSTOP[TM] �RC-Drives�Fast�Series 

## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

15 

V�2.6 2016-05-10 

Datasheet 

IKD03N60RF 

**==> picture [86 x 38] intentionally omitted <==**

## TRENCHSTOP[TM] �RC-Drives�Fast�Series 

## **Revision�History** 

IKD03N60RF 

## **Revision:�2016-05-10,�Rev.�2.6** 

## Previous Revision 

|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.1|2011-06-07|PreliminaryData sheet|
|2.2|2012-02-23|Final data sheet|
|2.3|2013-12-10|New value ICES max limit at 175°C|
|2.4|2014-02-26|Without PB free logo|
|2.5|2014-03-12|Storage temperature -55...+150°C|
|2.6|2016-05-10|New maximum values Ic(Tc), IF(Tc)and Figure 4|



16 

V�2.6 2016-05-10 

Datasheet 

## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/IKD03N60RFATMA1/igbt-65-a-22-v-536-w-600-to-252-dpak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ikd03n60rfatma1/transistor-igbt-600v-6-5a-to-252/dp/3585350RL)
---

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