# Motor Driver/Controller, Three Phase AC, 13.5V to 18.5V, 600V/15A/6 Outputs, SIP-24

![Product image](https://novapart.co/image/farnell:2781281/)

**URL**: https://novapart.co/products/IKCM15H60GAXKMA2/motor-driver-controller-three-phase-ac-135v-to
**SKU**: IKCM15H60GAXKMA2
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Intelligent Power Modules
**Price**: €5.9000
**Stock**: 200+
**Lead Time**: 176 days (indicative)

## Description

Motor Type:Three Phase AC; No. of Outputs:6Outputs; Output Current:15A; Output Voltage:600V; Driver Case Style:SIP; No. of Pins:24Pins; Supply Voltage Min:13.5V; Supply Voltage Max:18.5V

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Ipm Series | CIPOS Mini |
| Product Range | CIPOS Mini |
| Ipm Case Style | DIP |
| Ipm Power Device | IGBT |
| Isolation Voltage | 2kV |
| Current Rating (Ic / Id) | 15A |
| Voltage Rating (Vces / Vdss) | 600V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781281/)

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## Control Integrated POwer System (CIPOS™) 

## IKCM15H60GA 

## Datasheet 

Please read the Important Notice and Warnings at the end of this document page 1 of 17 

Datasheet www.infineon.com 

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Control Integrated POwer System (CIPOS™) IKCM15H60GA 

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## Table of contents 

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**----- Start of picture text -----**<br>
|||
|---|---|
|Table of contents ................................................................................................................................................... 2|
|CIPOS™ Control Integrated POwer System ............................................................................................................ 3|
|Features|.................................................................................................................................................................. 3|
|Target Applications ...................................................................................................................................................... 3|
|Description  .................................................................................................................................................................. 3|
|System Configuration .................................................................................................................................................. 3|
|Pin Configuration ................................................................................................................................................... 4|
|Internal Electrical Schematic ................................................................................................................................. 4|
|Pin Assignment ...................................................................................................................................................... 5|
|Pin Description ...................................................................................................................................................... 5|
|HIN(U, V, W) and LIN(U, V, W) (Low side and high side control pins, Pin 7 - 12)......................................................... 5|
|VFO (Fault-output and NTC, Pin 14) ............................................................................................................................ 6|
|ITRIP (Over current detection function, Pin 15) .......................................................................................................... 6|
|VDD, VSS (Low side control supply and reference, Pin 13, 16) ................................................................................... 6|
|VB(U, V, W) and VS(U, V, W) (High side supplies, Pin 1 - 6) .......................................................................................... 6|
|NW, NV, NU (Low side emitter, Pin 17 - 19) ................................................................................................................. 6|
|W, V, U (High side emitter and low side collector, Pin 20 - 22) ................................................................................... 6|
|P (Positive bus input voltage, Pin 23) .......................................................................................................................... 6|
|Absolute Maximum Ratings ................................................................................................................................... 7|
|Module Section ............................................................................................................................................................ 7|
|Inverter Section............................................................................................................................................................ 7|
|Control Section ............................................................................................................................................................ 7|
|Recommended Operation Conditions ................................................................................................................... 8|
|Static Parameters .................................................................................................................................................. 9|
|Dynamic Parameters ........................................................................................................................................... 10|
|Bootstrap Parameters ......................................................................................................................................... 10|
|Thermistor ........................................................................................................................................................... 11|
|Mechanical Characteristics and Ratings .............................................................................................................. 11|
|Circuit of a Typical Application ............................................................................................................................ 12|
|Switching Times Definition .................................................................................................................................. 13|
|Electrical characteristic ....................................................................................................................................... 14|
|Package Outline ................................................................................................................................................... 15|
|Revision history ................................................................................................................................................... 16|

**----- End of picture text -----**<br>


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Control Integrated POwer System (CIPOS™) IKCM15H60GA 

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## CIPOS ™ 

## C ontrol I ntegrated PO wer S ystem 

## _Dual In-Line Intelligent Power Module 3 Φ -bridge 600V / 15A_ 

## Features 

Fully isolated Dual In-Line molded module 

- TRENCHSTOP ™ IGBTs 

- Rugged SOI gate driver technology with stability against transient and negative voltage 

- 0.5 μ s minimum deadtime 

- 0.5 μ s on/off pulse width response possible 

- On/off matched delay time to all 6 driver outputs 

- Allowable negative VS potential up to -11V for signal transmission at VBS=15V 

- Integrated bootstrap functionality 

- Over current shutdown 

- Temperature monitor 

- Under-voltage lockout at all channels 

- Low side emitter pins accessible for all phase current monitoring (open emitter) 

## Description 

The CIPOS ™ module family offers the chance for integrating various power and control components to increase reliability, optimize PCB size and system costs. 

It is designed to control three phase AC motors and permanent magnet motors in variable speed drives for high switching frequency applications(around 15kHz) like a washing machine due to very low turnoff switching loss. The package concept is specially adapted to power applications, which need good thermal conduction and electrical isolation, but also EMI-save control and overload protection. 

TRENCHSTOP ™ IGBTs and anti parallel diodes are combined with an optimized SOI gate driver for excellent electrical performance. 

- Cross-conduction prevention 

- All of 6 switches turn off during protection 

- Lead-free terminal plating; RoHS compliant 

## System Configuration 

## Target Applications 

- Washing machines 

- Fans 

- Low power motor drives 

- 3 half bridges with TRENCHSTOP ™ IGBTs and anti parallel diodes 

- 3 Φ SOI gate driver 

- Thermistor 

- Pin-to-heatsink clearance distance typ. 1.6mm 

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## Pin Configuration 

Bottom View 

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**----- Start of picture text -----**<br>
(24) NC<br>(1) VS(U)<br>(2) VB(U)<br>(23) P<br>(3) VS(V)<br>(4) VB(V)<br>(22) U<br>(5) VS(W)<br>(6) VB(W)<br>(21) V<br>(7) HIN(U)<br>(8) HIN(V) (20) W<br>(9) HIN(W)<br>(10) LIN(U)<br>(11) LIN(V) (19) NU<br>(12) LIN(W)<br>(13) VDD<br>(14) VFO (18) NV<br>(15) ITRIP<br>(16) VSS<br>(17) NW<br>**----- End of picture text -----**<br>


Figure 1 Pin configuration 

## Internal Electrical Schematic 

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**----- Start of picture text -----**<br>
 NC (24)<br>P (23)<br>(1) VS(U)<br>(2) VB(U) VB1 HO1<br>RBS1 VS1 U (22)<br>(3) VS(V)<br>(4) VB(V) — VB2 HO2 [4]<br>RBS2 4 VS2 i V (21)<br>(5) VS(W) |<br>HO3<br>(6) VB(W) VB3<br>RBS3 VS3 W (20)<br>(7) HIN(U) HIN1 LO1<br>(8) HIN(V) HIN2<br>NU (19)<br>(9) HIN(W) HIN3<br>(10) LIN(U) LIN1<br>(11) LIN(V) LIN2 LO2<br>(12) LIN(W) LIN3<br>NV (18)<br>(13) VDD VDD<br>(14) VFO VFO<br>LO3<br>(15) ITRIP ITRIP<br>(16) VSS VSS NW (17)<br>Thermistor<br>**----- End of picture text -----**<br>


Figure 2 Internal schematic 

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## Pin Assignment 

|Pin Number|Pin Name|Pin Description|
|---|---|---|
|1|VS(U)|U-phase high side floatingIC supplyoffset voltage|
|2|VB(U)|U-phase high side floatingIC supplyvoltage|
|3|VS(V)|V-phase high side floatingIC supplyoffset voltage|
|4|VB(V)|V-phase high side floatingIC supplyvoltage|
|5|VS(W)|W-phase high side floatingIC supplyoffset voltage|
|6|VB(W)|W-phase high side floatingIC supplyvoltage|
|7|HIN(U)|U-phase high sidegate driver input|
|8|HIN(V)|V-phase high sidegate driver input|
|9|HIN(W)|W-phase high sidegate driver input|
|10|LIN(U)|U-phase low sidegate driver input|
|11|LIN(V)|V-phase low sidegate driver input|
|12|LIN(W)|W-phase low sidegate driver input|
|13|VDD|Low side control supply|
|14|VFO|Fault output/Temperature monitor|
|15|ITRIP|Over current shutdown input|
|16|VSS|Low side control negative supply|
|17|NW|W-phase low side emitter|
|18|NV|V-phase low side emitter|
|19|NU|U-phase low side emitter|
|20|W|Motor W-phase output|
|21|V|Motor V-phase output|
|22|U|Motor U-phase output|
|23|P|Positive bus input voltage|
|24|NC|No Connection|



## Pin Description 

HIN(U, V, W) and LIN(U, V, W) (Low side and high side control pins, Pin 7 - 12) 

These pins are positive logic and they are responsible for the control of the integrated IGBT. The Schmitt-trigger input thresholds of them are such to guarantee LSTTL and CMOS compatibility down to 3.3V controller outputs. Pull-down resistor of about 5k  is internally provided to pre-bias inputs during supply start-up and a zener clamp is provided for pin protection purposes. Input Schmitt-trigger and noise filter provide beneficial noise rejection to short input pulses. 

The noise filter suppresses control pulses which are below the filter time _t_ FILIN. The filter acts according to Figure 4. 

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**----- Start of picture text -----**<br>
CIPOS [TM]<br>Schmitt-Trigger<br>HINx INPUT NOISE<br>LINx FILTER<br> 5 k  UZ=10.5V<br>SWITCH LEVEL<br>VSS VIH; VIL<br>Figure 3 Input pin structure<br>a) t FILIN b) t FILIN<br>HIN HIN<br>LIN LIN<br>high<br>HO HO<br>LO low LO<br>Figure 4 Input filter timing diagram<br>**----- End of picture text -----**<br>


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It is not recommended for proper work to provide input pulse-width lower than 0.5µs. 

The integrated gate drive provides additionally a shoot through prevention capability which avoids the simultaneous on-state of two gate drivers of the same leg (i.e. HO1 and LO1, HO2 and LO2, HO3 and LO3). When two inputs of a same leg are activated, only former activated one is activated so that the leg is kept steadily in a safe state. 

A minimum deadtime insertion of typically 380ns is also provided by driver IC, in order to reduce crossconduction of the external power switches. 

VFO (Fault-output and NTC, Pin 14) 

The VFO pin indicates a module failure in case of under voltage at pin VDD or in case of triggered over current detection at ITRIP. A pull-up resistor is externally required. 

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**----- Start of picture text -----**<br>
VDD CIPOS [TM]<br>RON,FLT From ITRIP - Latch<br>VFO<br>   1<br>VSS From UV detection<br>Thermistor<br>**----- End of picture text -----**<br>


Figure 5 Internal circuit at pin VFO 

The same pin provides direct access to the NTC, which is referenced to VSS. An external pull-up resistor connected to +5V ensures that the resulting voltage can be directly connected to the microcontroller. 

ITRIP (Over current detection function, Pin 15) 

VDD, VSS (Low side control supply and reference, Pin 13, 16) 

VDD is the control supply and it provides power both to input logic and to output power stage. Input logic is referenced to VSS ground. 

The under-voltage circuit enables the device to operate at power on when a supply voltage of at least a typical voltage of VDDUV+ = 12.1V is present. 

The IC shuts down all the gate drivers power outputs, when the VDD supply voltage is below VDDUV- = 10.4V. This prevents the external power switches from critically low gate voltage levels during on-state and therefore from excessive power dissipation. 

VB(U, V, W) and VS(U, V, W) (High side supplies, Pin 1 - 6) 

VB to VS is the high side supply voltage. The high side circuit can float with respect to VSS following the external high side power device emitter voltage. 

Due to the low power consumption, the floating driver stage is supplied by integrated bootstrap circuit. 

The under-voltage detection operates with a rising supply threshold of typical VBSUV+ = 12.1V and a falling threshold of VBSUV- = 10.4V. 

VS(U, V, W) provide a high robustness against negative voltage in respect of VSS of -50V transiently. This ensures very stable designs even under rough conditions. 

NW, NV, NU (Low side emitter, Pin 17 - 19) 

CIPOS ™ provides an over current detection function by connecting the ITRIP input with the IGBT collector current feedback. The ITRIP comparator threshold (typ. 0.47V) is referenced to VSS ground. An input noise filter (typ.: tITRIPMIN = 530ns) prevents the driver to detect false overcurrent events. 

Over current detection generates a shutdown of all outputs of the gate driver after the shutdown propagation delay of typically 1000ns. 

The fault-clear time is set to minimum 40µs. 

The low side emitters are available for current measurements of each phase leg. It is recommended to keep the connection to pin VSS as short as possible in order to avoid unnecessary inductive voltage drops. 

W, V, U (High side emitter and low side collector, Pin 20 - 22) 

These pins are motor U, V, W input pins. 

P (Positive bus input voltage, Pin 23) 

The high side IGBTs are connected to the bus voltage. It is noted that the bus voltage does not exceed 450V. 

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## Absolute Maximum Ratings 

(VDD = 15V and TJ = 25°C, if not stated otherwise) 

## Module Section 

|Module Section||||||
|---|---|---|---|---|---|
|Description|Condition|Symbol|Value||Unit|
||||min|max||
|Storage temperature range||Tstg|-40|125|°C|
|Isolation test voltage|RMS, f = 60Hz, t = 1min|VISOL|2000|-|V|
|Operating case temperature range|Refer to Figure 6|TC|-40|125|°C|



## Inverter Section 

|Inverter Section||||||
|---|---|---|---|---|---|
|Description|Condition|Symbol|Value||Unit|
||||min|max||
|Max. blocking voltage|IC= 250µA|VCES|600|-|V|
|DC link supply voltage of P-N|Applied between P-N|VPN|-|450|V|
|DC link supply voltage (surge) of P-N|Applied between P-N|VPN(surge)|-|500|V|
|Output current|TC= 25°C, TJ< 150°C<br>TC= 80°C, TJ< 150°C|IC|-15<br>-10|15<br>10|A|
|Maximum peak output current|less than 1ms|IC(peak)|-24|24|A|
|Short circuit withstand time1|VDC≤ 400V, TJ= 150°C|tSC|-|5|µs|
|Power dissipation per IGBT||Ptot|-|25.2|W|
|Operating junction temperature range||TJ|-40|150|°C|
|Single IGBT thermal resistance,<br>junction-case||RthJC|-|4.96|K/W|
|Single diode thermal resistance,<br>junction-case||RthJCD|-|5.41|K/W|



## Control Section 

|Control Section||||||
|---|---|---|---|---|---|
|Description|Condition|Symbol|Value||Unit|
||||min|max||
|Module supply voltage||VDD|-1|20|V|
|High side floating supply voltage<br>(VB vs. VS)||VBS|-1|20|V|
|Input voltage|LIN, HIN, ITRIP|VIN<br>VITRIP|-1<br>-1|10<br>10|V|
|Switching frequency||fPWM|-|20|kHz|



> 1 Allowed number of short circuits: <1000; time between short circuits: >1s. 

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## Recommended Operation Conditions 

All voltages are absolute voltages referenced to VSS -potential unless otherwise specified. 

|Description|Symbol|Value|Value|Value|Unit|
|---|---|---|---|---|---|
|||min|typ|max||
|DC link supply voltage of P-N|VPN|0|-|450|V|
|High side floating supply voltage (VBvs. VS)|VBS|13.5|-|18.5|V|
|Low side supply voltage|VDD|14.5|16|18.5|V|
|Control supply variation|ΔVBS,<br>ΔVDD|-1<br>-1|-<br>-|1<br>1|V/µs|
|Logic input voltages LIN, HIN, ITRIP|VIN<br>VITRIP|0<br>0|-<br>-|5<br>5|V|
|Between VSS - N (including surge)|VSS|-5|-|5|V|



Figure 6 TC measurement point[1] 

1Any measurement except for the specified point in figure 6 is not relevant for the temperature verification and brings wrong or different information. 

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## Static Parameters 

(VDD = 15V and TJ = 25°C, if not stated otherwise) 

|Description|Condition|Symbol||Value||Unit|
|---|---|---|---|---|---|---|
||||min|typ|max||
|Collector-Emitter saturation voltage|IC= 10A<br>TJ=  25°C<br>150°C|VCE(sat)|-<br>-|1.9<br>2.4|2.8<br>-|V|
|Diode forward voltage|IF= 10A<br>TJ=  25°C<br>150°C|VF|-<br>-|1.75<br>1.8|2.4<br>-|V|
|Collector-Emitter leakage current|VCE= 600V|ICES|-|-|1|mA|
|Logic "1" input voltage (LIN, HIN)||VIH|-|2.1|2.5|V|
|Logic "0" input voltage (LIN, HIN)||VIL|0.7|0.9|-|V|
|ITRIP positive going threshold||VIT,TH+|400|470|540|mV|
|ITRIP input hysteresis||VIT,HYS|40|70|-|mV|
|VDD and VBS supply under voltage<br>positive going threshold||VDDUV+<br>VBSUV+|10.8|12.1|13.0|V|
|VDD and VBS supply under voltage<br>negative going threshold||VDDUV-<br>VBSUV-|9.5|10.4|11.2|V|
|VDD and VBS supply under voltage<br>lockout hysteresis||VDDUVH<br>VBSUVH|1.0|1.7|-|V|
|Input clamp voltage (HIN, LIN,  ITRIP)|Iin=4mA|VINCLAMP|9.0|10.1|12.5|V|
|Quiescent VBxsupply current<br>(VBxonly)|HIN= 0V|IQBS|-|300|500|µA|
|Quiescent VDD supply current<br>(VDD only)|LIN= 0V, HINX= 5V|IQDD|-|370|900|µA|
|Input bias current|VIN= 5V|IIN+|-|1|1.5|mA|
|Input bias current|VIN= 0V|IIN-|-|2|-|µA|
|ITRIP input bias current|VITRIP= 5V|IITRIP+|-|65|150|µA|
|VFO input bias current|VFO = 5V, VITRIP= 0V|IFO|-|60|-|µA|
|VFO output  voltage|IFO= 10mA, VITRIP= 1V|VFO|-|0.5|-|V|



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## Dynamic Parameters 

(VDD = 15V and TJ = 25°C, if not stated otherwise) 

|Description|Condition|Symbol||Value||Unit|
|---|---|---|---|---|---|---|
||||min|typ|max||
|Turn-onpropagation delaytime|VLIN, HIN= 5V,<br>IC= 10A,<br>VDC= 300V|ton|-|610|-|ns|
|Turn-on rise time||tr|-|30|-|ns|
|Turn-on switchingtime||tc(on)|-|100|-|ns|
|Reverse recoverytime||trr|-|115|-|ns|
|Turn-offpropagation delaytime|VLIN, HIN= 0V,<br>IC= 10A,<br>VDC= 300V|toff|-|790|-|ns|
|Turn-off fall time||tf|-|65|-|ns|
|Turn-off switchingtime||tc(off)|-|115|-|ns|
|Short circuitpropagation delaytime|From VIT,TH+to 10% ISC|tSCP|-|1440|-|ns|
|Input filter time ITRIP|VITRIP= 1V|tITRIPmin|-|530|-|ns|
|Input filter time at LIN, HIN  for turn<br>on and off|VLIN, HIN= 0V & 5V|tFILIN|-|290|-|ns|
|Fault clear time after ITRIP-fault|VITRIP= 1V|tFLTCLR|40|65|200|µs|
|Deadtime between low side and high<br>side||DTPWM|0.5|-|-|µs|
|Deadtime ofgate drive circuit||DTIC|-|380|-|ns|
|IGBT turn-on energy (includes reverse<br>recovery of diode)|VDC= 300V, IC= 10A<br>TJ=  25°C<br>150°C|Eon|-<br>-|235<br>340|-<br>-|µJ|
|IGBT turn-off energy|VDC= 300V, IC= 10A<br>TJ=  25°C<br>150°C|Eoff|-<br>-|150<br>220|-<br>-|µJ|
|Diode recovery energy|VDC= 300V, IC= 10A<br>TJ=  25°C<br>150°C|Erec|-<br>-|30<br>60|-<br>-|µJ|



## Bootstrap Parameters 

(TJ = 25°C, if not stated otherwise) 

|Bootstrap Parameters<br>(TJ= 25°C, if not stated otherwise)|||||||
|---|---|---|---|---|---|---|
|Description|Condition|Symbol||Value||Unit|
||||min|typ|max||
|Repetitivepeak reverse voltage||VRRM|600|-|-|V|
|Bootstrap diode resistance of<br>U-phase1|VS2 or VS3 = 300V, TJ= 25°C<br>VS2 and VS3 = 0V, TJ= 25°C<br>VS2 or VS3 = 300V, TJ= 125°C<br>VS2 and VS3 = 0V,TJ= 125°C|RBS1|-|35<br>40<br>50<br>65|-|Ω|
|Reverse recoverytime|IF= 0.6A,di/dt = 80A/µs|trr_BS|-|50|-|ns|
|Forward voltage drop|IF= 20mA,VS2 and VS3 = 0V|VF_BS|-|2.6|-|V|



1 RBS2 and RBS3 have same values to RBS1. 

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## Thermistor 

|Thermistor|||||||
|---|---|---|---|---|---|---|
|Description|Condition|Symbol|Value|||Unit|
||||min|typ|max||
|Resistor|TNTC= 25°C|RNTC|-|85|-|k|
|B-constant of NTC<br>(Negative Temperature Coefficient)||B(25/100)|-|4092|-|K|



**==> picture [250 x 211] intentionally omitted <==**

**----- Start of picture text -----**<br>
3500<br>35<br>3000  Min.<br>PtH | 30 aa7 Typ.<br>Max.<br>25<br>2500 Pc] ) 20 WeeARETE HEEE<br>2000 WE] 15 GeNREECEEEET<br>10<br>1500 AC) PN<br>QE 5 EPPS<br>0<br>1000 CAL) 50 COceccccePress 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130<br>500 iN Thermistor temperature [ oo ℃ ]<br>0 ET -}SELLENg LEH<br>-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130<br>Thermistor temperature [ ℃ ]<br>]<br>Ω<br>k<br>[<br>Thermistor resistance<br>]<br>Ω<br>Thermistor resistance [k<br>**----- End of picture text -----**<br>


Figure 7 Thermistor resistance – temperature curve and table (For more information, please refer to the application note ‘AN2016-10 CIPOS Mini Technical description’) 

## Mechanical Characteristics and Ratings 

|Description|Condition|Value|Value|Value|Unit|
|---|---|---|---|---|---|
|||min|typ|max||
|Mountingtorque|M3 screw and washer|0.59|0.69|0.78|Nm|
|Flatness|Refer to Figure 8|-50|-|100|µm|
|Weight||-|6.15|-|g|



**==> picture [100 x 89] intentionally omitted <==**

**----- Start of picture text -----**<br>
+<br>-<br>- +<br>**----- End of picture text -----**<br>


Figure 8 Flatness measurement position 

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## Circuit of a Typical Application 

**==> picture [404 x 287] intentionally omitted <==**

**----- Start of picture text -----**<br>
NC (24)<br>P (23)<br>(1) VS(U)<br>(2) VB(U) VB1 HO1<br>RBS1 VS1 U (22)<br>(3) VS(V)<br>#4<br>(4) VB(V) VB2 HO2<br>RBS2 VS2 V (21) 3-ph  A C<br>Motor<br>(5) VS(W)<br>(6) VB(W) VB3 HO3<br>RBS3 VS3 W (20)<br>#1 #5<br>(7) HIN(U) HIN1<br>(8) HIN(V) HIN2 LO1<br>(9) HIN(W) HIN3 NU (19)<br>(10) LIN(U) LIN1<br>ControllerMicro ((1112)) LIN LIN((VW)) LIN2LIN3 LO2 #6 #7<br>NV (18)<br>VDD line (13) VDD VDD Power<br>(14) VFO VFO GND line<br>(15) ITRIP ITRIP LO3<br>5 or 3.3V line (16) VSS VSS NW (17)<br>Thermistor<br>#3<br>Temperature monitor #2 U-phase current sensingV-phase current sensing<br>W-phase current sensing<br><Signal for protection><br><Signal for protection><br>GND line Control<br>**----- End of picture text -----**<br>


## Figure 9 Typical application circuit 

## 1. Input circuit 

- To reduce input signal noise by high speed switching, the RIN and CIN filter circuit should be mounted. (100Ω, 1nF) 

- - CIN should be placed as close to VSS pin as possible. 

## 2. Itrip circuit 

- To prevent protection function errors, CITRIP should be placed as close to Itrip and VSS pins as possible. 

## 3. VFO circuit 

- VFO output is an open drain output. This signal line should be pulled up to the positive side of the 5V/3.3V logic power supply with a proper resistor RPU. 

- It is recommended that RC filter be placed as close to the controller as possible. 

## 4. VB-VS circuit 

- Capacitor for high side floating supply voltage should be placed as close to VB and VS pins as possible. 

## 5. Snubber capacitor 

- ™ 

- The wiring between CIPOS Mini and snubber capacitor including shunt resistor should be as short as possible. 

## 6. Shunt resistor 

- The shunt resistor of SMD type should be used for reducing its stray inductance. 

## 7. Ground pattern 

- Ground pattern should be separated at only one point of shunt resistor as short as possible. 

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Control Integrated POwer System (CIPOS™) IKCM15H60GA 

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## Switching Times Definition 

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**----- Start of picture text -----**<br>
HINx 2.1V<br>LINx<br>0.9V<br>trr<br>toff ton<br>10%<br>iCx<br>90% 90%<br>tf tr<br>10%<br>10% 10% 10%<br>v CEx<br>tc(off) tc(on)<br>**----- End of picture text -----**<br>


## Figure 10 Switching times definition 

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## Control Integrated POwer System (CIPOS™) IKCM15H60GA 

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## Electrical characteristic 

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**----- Start of picture text -----**<br>
24 24 24<br>22 T J =25 ℃ 22 VDD=15V 22<br>20 20 20<br>18 18 18<br>16 16 16<br>14 14 14<br>12 12 12<br>108  V VDD DD =15V =20V 108 1088  T TJ TJ J =25=150=150 ℃℃℃<br>6 6  T J =25 ℃ 6<br>4 4  T J =150 ℃ 4<br>2 2 2<br>0 0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VCE(sat), Collector - Emitter voltage [V] VCE(sat), Collector - Emitter voltage [V] VF, Emitter - Collector voltage [V]F, Emitter - Collector voltage [V], Emitter - Collector voltage [V]<br>Typ. Collector – Emitter saturation voltage  Typ. Collector – Emitter saturation voltage   Typ. Diode forward voltage<br>2.4 0.6 250<br>2.2 V VDCDD =300V =15V High side @T J =25 ℃   225 VVDCDD=300V=15V<br>2.01.81.61.4 High side @THigh side @TLow side @TJ JJ =25=25=150 ℃  ℃  ℃  0.50.4 High side @TLow side @TLow side @TJJ J =25=150=150 ℃  ℃ ℃  200175150 High side @THigh side @T Low side  Low side @T @T JJ JJ=25 =150=25=150 ℃   ℃  ℃ ℃<br>1.2 Low side @T J =150 ℃  0.3 125<br>1.0 100<br>0.8 0.2<br>75<br>0.6<br>50<br>0.4 0.1<br>0.2 VDC=300V 25<br>VDD=15V<br>0.0 0.0 0<br>0 2 4 6 8 10 12 14 16 18 20 22 24 0 2 4 6 8 10 12 14 16 18 20 22 24 0 2 4 6 8 10 12 14 16 18 20 22 24<br>Ic, Collector current [A] Ic, Collector current [A] Ic, Collector current [A]<br>Ic, Collector - Emitter current [A] Ic, Collector - Emitter current [A] , Emitter - Collector current [A]IFIFF<br>Eon, Turn on switching energy loss [mJ] Eoff, Turn off switching energy loss [mJ] Erec, Reverse recovery energy loss [uJ]<br>**----- End of picture text -----**<br>


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24<br>22<br>20<br>18<br>16<br>14<br>12<br>J<br>1088  T TJ TJ J =25=150=150 ℃℃℃<br>6<br>4<br>2<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VF, Emitter - Collector voltage [V]F, Emitter - Collector voltage [V], Emitter - Collector voltage [V]<br> Typ. Diode forward voltage<br>, Emitter - Collector current [A]IFIFF<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
 Typ. Turn off switching energy loss<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Typ. Reverse recovery energy loss<br>**----- End of picture text -----**<br>


Typ. Turn on switching energy loss 

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**----- Start of picture text -----**<br>
800 500 1200<br>V V DC DD =300V =15V 450 VVDCDD=300V=15V 1150 V VDCDD =300V =15V<br>750700 High side @THigh side @T Low side @T Low side @TJ JJ J =25 =150=25=150 ℃   ℃  ℃ ℃  400350300 High side @THigh side @T Low side @T Low side @TJ JJJ=25 =150=25=150 ℃   ℃  ℃ ℃  110010501000950 High side @T High side @T Low side @TLow side @T J J J J=25=150=25 =150 ℃℃℃ ℃<br>250 900<br>650 200 850<br>800<br>150<br>750<br>600 100<br>700<br>50 650<br>550 0 600<br>0 2 4 6 8 10 12 14 16 18 20 22 24 0 2 4 6 8 10 12 14 16 18 20 22 24 0 2 4 6 8 10 12 14 16 18 20 22 24<br>Ic, Collector current [A] Ic, Collector current [A] Ic, Collector current [A]<br> Typ. Turn on propagation delay time  Typ. Turn on switching time   Typ. Turn off propagation delay time<br>10<br>350 350<br>325 V V DC DD =300V =15V 325 VV DC DD=300V=15V<br>300 300 1<br>275 High side @T J =25 ℃ 275250 High side @THigh side @T JJ =25=150 ℃   ℃<br>250225200 High side @T Low side @TLow side @T JJ J=25=150 =150 ℃℃ ℃ 225200175 Low side @TLow side @T JJ =25=150 ℃  ℃  0.1 D : duty ratioD=50%<br>D=20%<br>175 150 0.01 D=10%<br>150 125 D=5%<br>100 D=2%<br>125 75 1E-3 Single pulse<br>100 50<br>75 25<br>50 0 2 4 Ic, Collector current [A] 6 8 10 12 14 16 18 20 22 24 0 0 2 4 Ic, Collector current [A] 6 8 10 12 14 16 18 20 22 24 1E-41E-7 1E-6 1E-5 tP, Pulse width [sec.] 1E-4 1E-3 0.01 0.1 1 10 100<br> Typ. Turn off switching time  Typ. Reverse recovery time  IGBT transient thermal resistance at all six<br>IGBTs operation<br>, Turn on switching time [ns]<br>tc(on)<br>, Turn on propagation delay time [ns] , Turn off propagation delay time [ns]<br>ton toff<br>, Turn off switching time [ns]<br>, Reverse recovery time [ns]<br>tc(off) trr<br>transient thermal resistance [K/W]ZthJC,<br>**----- End of picture text -----**<br>


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## Package Outline 

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Control Integrated POwer System (CIPOS™) IKCM15H60GA 

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## Revision history 

|Document<br>version|Date of release|Description of changes|
|---|---|---|
|V 2.4|Sep. 2017|Maximum operating case temperature, Tc= 125°C<br>Package outline update|
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## Trademarks 

All referenced product or service names and trademarks are the property of their respective owners. 

## IMPORTANT NOTICE 

Edition 2017-09-06 The information given in this document shall in no event be regarded as a guarantee of conditions or Published by characteristics  (“Beschaffenheitsgarantie”) . Infineon Technologies AG With respect to any examples, hints or any typical 81726 München, Germany values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all © 2017 Infineon Technologies AG. warranties and liabilities of any kind, including without limitation warranties of non-infringement All Rights Reserved. of intellectual property rights of any third party. Do you have a question about this In addition, any information given in this document document? is subject to customer’s compliance with its obligations stated in this document and any Email: erratum@infineon.com applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in Document reference customer’s applications. ifx1 The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( www.infineon.com ). 

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## WARNINGS 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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---

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