# IGBT, 38 A, 1.65 V, 125 W, 650 V, TO-263 (D2PAK), 3 Pins

![Product image](https://novapart.co/image/farnell:2986349RL/)

**URL**: https://novapart.co/products/IKB20N65EH5ATMA1/igbt-38-a-165-v-125-w-650-to-263-d2pak-3-pins
**SKU**: IKB20N65EH5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.0200
**Stock**: 500+
**Lead Time**: 218 days (indicative)

## Description

DC Collector Current:38A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-263; No. of Pins:3

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 |
| Power Dissipation | 125W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-263 (D2PAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 38A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.65V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2986349RL/)

IKB20N65EH5 

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## TRENCHSTOP[TM] 

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Features and Benefits: C<br>High speed H5d technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>* 650V breakdown voltage<br>G<br>«Low Q G E<br>¢ IGBT copacked with full rated current RAPID 1 fast antiparallel<br>diode<br>* Maximum junction temperature 175°C C<br>¢ Pb-free lead plating; ROHS compliant<br>http://www.infineon.com/igbt/ *« Complete product spectrum and PSpice Models: G) y<br>7026 On<br>Potential Applications: K9<br>« Energy Generation fe, /- Tt<br>- Solar String Inverter A f \<br>- Solar Micro Inverter Pe<br>G<br>¢ Industrial Power Supplies f<br>- Industrial SMPS<br>E<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKB20N65EH5|650V|20A|1.65V|175°C|K20EEH5|PG-TO263-3|



Datasheet www.infineon.com 

2018-01-11 

IKB20N65EH5 

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## High�speed�switching�series�5[th] �generation 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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## High�speed�switching�series�5[th] �generation 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||38.0<br>25.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||60.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||60.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_F||40.0<br>27.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||60.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||125.0<br>62.5|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.20|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.50|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|



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## High�speed�switching�series�5[th] �generation 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.42<br>1.39|1.70<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.20mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1400|50<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=20.0A|-|24.0|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1200|-|pF|
|Output capacitance|_C_oes||-|30|-||
|Reverse transfer capacitance|_C_res||-|5|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=20.0A,<br>_V_GE=15V|-|48.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=32.0Ω,_R_G(off)=32.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|21|-|ns|
|Turn-off delaytime|_t_d(off)||-|160|-|ns|
|Fall time|_t_f||-|23|-|ns|
|Turn-on energy|_E_on||-|0.56|-|mJ|
|Turn-off energy|_E_off||-|0.13|-|mJ|
|Total switchingenergy|_E_ts||-|0.69|-|mJ|



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## High�speed�switching�series�5[th] �generation 

|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=32.0Ω,_R_G(off)=32.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|11|-|ns|
|Turn-off delaytime|_t_d(off)||-|160|-|ns|
|Fall time|_t_f||-|27|-|ns|
|Turn-on energy|_E_on||-|0.23|-|mJ|
|Turn-off energy|_E_off||-|0.05|-|mJ|
|Total switchingenergy|_E_ts||-|0.28|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=800A/µs|-|80|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.50|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|8.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-750|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=860A/µs|-|56|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.36|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|10.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-500|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=32.0Ω,_R_G(off)=32.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|22|-|ns|
|Turn-off delaytime|_t_d(off)||-|180|-|ns|
|Fall time|_t_f||-|19|-|ns|
|Turn-on energy|_E_on||-|0.70|-|mJ|
|Turn-off energy|_E_off||-|0.15|-|mJ|
|Total switchingenergy|_E_ts||-|0.85|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=32.0Ω,_R_G(off)=32.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns|
|Rise time|_t_r||-|12|-|ns|
|Turn-off delaytime|_t_d(off)||-|180|-|ns|
|Fall time|_t_f||-|23|-|ns|
|Turn-on energy|_E_on||-|0.34|-|mJ|
|Turn-off energy|_E_off||-|0.06|-|mJ|
|Total switchingenergy|_E_ts||-|0.40|-|mJ|



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## High�speed�switching�series�5[th] �generation 

**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=800A/µs|-|108|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.08|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|13.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-620|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=750A/µs|-|80|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.77|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|13.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-650|-|A/µs|



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130 40<br>120<br>LTTTTT) 35 Roy fd).<br>110 es |<br>100 PNR 30<br>90<br>re 80 ee: 25 |<br>70<br>PORE EDEN<br>20<br>BN 60 ,<br>ee 50 15 ee<br>40<br>ef Nd NS<br>10<br>30 Se \<br>a<br>20<br>5<br>a<br>10<br>OS<br>0 Se 0 \<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>P tot I C<br>**----- End of picture text -----**<br>


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60 60<br>55 55<br>SRE ee Pp EAL |<br>50 50<br>PLL gp | pe pL |ea| |<br>VGE=18V VGE=18V<br>45 45<br>iL ceaUo | Lc<br>15V 15V<br>SL 40 12V a7 EOL 40 12V eeELTI |<br>e 35 | 10V Aa BL 35 10V Dea OK<br>30 8V 30 8V<br>3 ZW 8 || tLyy<br>7V 7V<br>25 25<br>Bee |<br>6V 6V<br>20 20<br>° e/a 5V AIA 5V<br>15 15<br>EEC) 4a a ey, 4V<br>10 10<br>a. | 2 ONS<br>5 5<br>LYN OLB<br>0 Pi  Aa 0 | A NY<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>


Figure 3. Typical ( _T_ vj=25°C) 

Figure 4. Typical ( _T_ vj=150°C) 

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60 2.00<br>Tj=25°C IC=5A<br>55 Tj=150°C IC=10A<br>IC=20A<br>a ee<br>50 1.75<br>ft Pe Fe|<br>Se 45 PPP eBll= L = = ee_<br>40 1.50<br>Pa ttt titi ia) & fF |] ft |<br>Ww rE<br>ett 35 ee<x |<br>So) / / FE —_<br>owgs 30 fo | TeE 1.25 os<br>ee=e 25 eea es —_____]<br>a FE<br>fe) 20 / O 1.00<br>i: 15 ee fe)<br>| |<br>10 0.75<br>Pi ti ty [yy]<br>PEt yy<br>5<br>0 —— | 0.50<br>pp  ttt TE CEE<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>


Figure 6. Typical a function ( _V_ GE=15V) 

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1000<br>aSE td(off)d(off) SS ——SS ES SS<br>tff<br>i td(on)d(on) a<br>trr<br>F f.. ee<br>—<br>a<br>AE<br>&<br>100 L eeeeee<br>” —— a<br>So-- ppaa eekeeerekeeereeerere<br>Esese 10 eT]eae<br>a a<br>ee<br>1<br>10 20 30 40 50 60 70 80 90 100<br>R G , GATE RESISTOR [ Ω ]<br>Figure 8. Typical switching times as a function of<br>resistor<br>(inductive load, T vj =150°C, V CE=400V,<br>t<br>**----- End of picture text -----**<br>


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td(off)d(off)<br>tff<br>PEPE i a<br>td(on)d(on)<br>trr<br>>—t—__+—__ +__ F f.. ee<br>td(off)<br>Ee tf TT —<br>100<br>| td(on) a<br>1 tr he ee ee ee<br>eeL L AE<br>, a ec &<br>= a Se eeseee ed ee 100 L eeeeee<br>” Ne ee ee ” —— a<br>=- pt ft | Peet | So-- ppaa eekeeerekeeereeerere<br>E 10 eae<br>po epeseseseesst Esese 10 eT]eae<br>pt tT ft tT tt a a<br>Pt ite et ee<br>1 1<br>0 5 10 15 20 25 30 35 40 45 50 55 60 10 20 30 40 50 60 70 80 90<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>t t<br>**----- End of picture text -----**<br>


Figure 7. 

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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, R G=32 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>


_V_ GE =0/15V, _I_ C Figure E) 

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**----- Start of picture text -----**<br>
6.0<br>typ.<br>5.5<br>100 e t| ttd(off)f aa eeee e Q= 5.0<br>I td(on) a<br>a SSS tr ae es ee 4.5<br>9 ~; | | | | |g 4.0<br>2 foo POR<br>3.5<br><= -<br>aa ow<br>E 10 a kK 3.0 ——]<br>= a =<br>pop 2.5<br>2.0<br>1.5<br>1 1.0<br>25 50 75 100 125 150 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 9. 

(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =20A, _R_ G=32 , Dynamic test circuit Figure E) 

Figure 10. 

( _I_ C=0.2mA) 

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3.5 1.6<br>Eoff / Eoff<br>Eon Eon<br>3.0 Ets / 1.4 Ets 7 <<br>1.2<br>rm) 2.5 / ] 7<br>uw Y ‘ rm)uw a a .<br>O / O 1.0 s 4<br>— / J — , —<br>2.0<br>nm / nm 0.8 s<br>Zz / 7 Zz 7<br>1.5<br>Z ) Z 0.6 7 <<br>I|7r7<br>Oy O<br>1.0<br>; 0.4<br>C<br>0.5 7 A aM<br>0.2 |__ |<br>ea [=]<br>0.0 0.0<br>0 5 10 15 20 25 30 35 40 45 50 55 60 10 20 30 40 50 60 70 80 90 100<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, R G=32 Ω , Dynamic test circuit in V GE =0/15V, I C =20A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


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High speed switching series 5 th generation<br>1.2 1.2<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>== == yo<br>Yo<br>1.0 1.0<br>F<br>& = “ L<br>+ 4<br>0.8 0.8<br>ae 7 4<br>> ae — > “ 4<br>O —_— O “ 7<br>x —_—— x 7 Za<br>Ww 0.6 = Ww 0.6 z 4<br>Zz -_—— Zz “ 4<br>uw uw “ a<br>Z Z “| 2<br>: 0.4 0.4<br>E= E= a<br>nn<br>0.2 0.2<br>0.0 0.0<br>25 50 75 100 125 150 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>


Figure 13. 

Figure 14. 

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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=0/15V, (inductive load, T vj =150°C, V GE=0/15V,<br>I C =20A, R G=32 , Dynamic test circuit in I C =20A, R G=32 , Dynamic test circuit in<br>Figure E) Figure E)<br>16 1E+4<br>— oe<br>1 | a es<br>130V 1 | Cies a ee<br>520V | Coes a ee ee ee ee<br>14 = Cres ———<br>— an | ee<br>i a e e ee eeee eeee<br>>.= 12 !J) 1000 ee r s rr re ee ee<br>oO — a es<br><x WL Ca es es<br>10 ] 2 PR<br>; 8 ) Zz2 100 heey\<br>= ~? Ce es<br>Lu= o pCNT<br>6 fj O ee<br>ul r— = a ee<br>Oey pNP<br>4 10<br>a i ee<br>po<br>2 a eeee<br>0 1<br>0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=20A) collector-emitter voltage<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
( V GE<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1 1<br>= Fr eA = FP Co Coo<br>N4 a| |<br>aT} D=0.5 4 D=0.5 |<br>Sg AIT PAI 0.2 CTH aT! HTH eA 0.2 CCT<br>< oomSe Re irr 0.1 EAty 0.1<br>0.05 0.05<br>Sm= 0.1 ST AA004 M0 =Samm 0.1 amn nt6200eee eet ee ee|<br>a ee | 0.02 | | | 0.02 |<br><x eeSeat sat 7ay Ail| ee | 0 oea SSSPT TTrr AVAPA TT 0<br>S 0.01 0.01 |<br>o¢ on Ae i on S EC Ae Co<br>single pulse single pulse<br>W PATI CEN ceecemn |e i a2 PT ete HII<br>a iP po Hill<br>F erm ern aeUT) PM raLH TIE TT EI UI<br>o 0.01 aerial il UUMEM 0.01<br>ZzGTee et ILI) dR, ELIR ti = coonFtmali AllTT II Hs 0 Re il<br>o |EC er --{i]tT & ee| -- LatIll<br>=- MEPT 7AT cGH ehie, G contre + i)ill - P TTI A LT ITT G chi, HG costes _ Mtlll<br>MT ALM EM | oot To a A |<br>| LU PET CPP A E<br>i: 1 2 3 4 5 6 i: 1 2 3 4 5 6<br>ri[K/W]: 0.014628 0.379807 0.573028 0.211451 0.018267 2.3E-3 ri[K/W]: 0.024075 0.499909 0.710519 0.239699 0.020917 2.5E-3<br>τ i[s]: 1.5E-5 3.4E-4 2.4E-3 0.013923 0.197253 2.48511 τ i[s]: 1.6E-5 3.4E-4 2.3E-3 0.014107 0.195819 2.379491<br>0.001 0.001<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>


> Figure 17. IGBT ( _D_ = _t_ p/T) 

Figure 18. Diode function ( _D_ = _t_ p/T) 

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**----- Start of picture text -----**<br>
130 1.4<br>Tj=25°C, IF = 20A Tj=25°C, IF = 20A<br>Tj=150°C, IF = 20A Tj=150°C, IF = 20A<br>120<br>1.2<br>\ ral<br>= 110 ~<br>eis | | fg 1.0 [op t t<br>F~~ x<br>> 100 Oo<br>0.8<br>WW> >o<br>oO 90 Oo<br>Boy g<br>0.6<br>80<br>:mf e 0.4 ft<br>foe TT<br>70<br>0.2<br>60 P| ff dL Pt tT | |<br>50 0.0<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 19. Typical reverse recovery time as a function Figure 20. Typical reverse recovery charge as a<br>of diode current slope function of diode current slope<br>( V R=400V) ( V R=400V)<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
18 0<br>Tj=25°C, IF = 20A Tj=25°C, IF = 20A<br>Tj=150°C, IF = 20A Tj=150°C, IF = 20A<br>16 EJ -100<br>LE<br>-200<br>; 14 n<br>ocWW - x=ef -300 oo |<br>oa 12 a<br>o cs -400<br>ae eee<br>10<br>oO<br>-500<br>: en ee<br>aWw 8 L— ®a -600<br>aa 6 °<br>i BLN<br>-700<br>WW ne}<br>eeis 4 e e<br>-800<br>2 -900<br>0 -1000<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical peak reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>60 2.00<br>Tj=25°C<br>Tj=150°C<br>50<br>1.75<br>IF=10A<br>IF=20A<br>IF=40A<br>= 40 Ww<br>1.50<br>5 O i ee<br>: $0 poopopapada--~<br>° 30 0<br>a nd<br>S S 1.25<br>: 6o +<br>20<br>1.00<br>10<br>0 0.75<br>E v an pt | tf<br>0.0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I rr<br>/dt<br>rr<br>dI<br>I rrm<br>I F V F<br>**----- End of picture text -----**<br>


Figure 23. 

Figure 24. 

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## High�speed�switching�series�5[th] �generation 

## **Package Drawing PG-TO263-3** 

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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||



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Datasheet<br>**----- End of picture text -----**<br>


V�2.1 2018-01-11 

IKB20N65EH5 

**==> picture [86 x 38] intentionally omitted <==**

## High�speed�switching�series�5[th] �generation 

## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


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t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

14 

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IKB20N65EH5 

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## High�speed�switching�series�5[th] �generation 

## **Revision�History** 

IKB20N65EH5 

## **Revision:�2018-01-11,�Rev.�2.1** 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2018-01-11|Final data sheet|



15 

V�2.1 2018-01-11 

Datasheet 

## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/IKB20N65EH5ATMA1/igbt-38-a-165-v-125-w-650-to-263-d2pak-3-pins)
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- [Supplier page](https://es.farnell.com/infineon/ikb20n65eh5atma1/igbt-650v-38a-125w-to-263/dp/2986349RL)
---

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