# IGBT, 30 A, 1.65 V, 105 W, 650 V, TO-263 (D2PAK), 3 Pins

![Product image](https://novapart.co/image/farnell:3267757/)

**URL**: https://novapart.co/products/IKB15N65EH5ATMA1/igbt-30-a-165-v-105-w-650-to-263-d2pak-3-pins
**SKU**: IKB15N65EH5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.9740
**Stock**: 200+
**Lead Time**: 141 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 |
| Power Dissipation | 105W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-263 (D2PAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 30A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.65V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3267757/)

IKB15N65EH5 

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## TRENCHSTOP[TM] 

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Features and Benefits: C<br>High speed H5d technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>* 650V breakdown voltage<br>G<br>«Low Q G E<br>¢ IGBT copacked with full rated current RAPID 1 fast antiparallel<br>diode<br>* Maximum junction temperature 175°C C<br>¢ Pb-free lead plating; ROHS compliant<br>http://www.infineon.com/igbt/ *« Complete product spectrum and PSpice Models: G) y<br>7026 On<br>Potential Applications: K9<br>« Energy Generation fe, /- Tt<br>- Solar String Inverter A f \<br>- Solar Micro Inverter Pe<br>G<br>¢ Industrial Power Supplies f<br>- Industrial SMPS<br>E<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKB15N65EH5|650V|15A|1.65V|175°C|K15EEH5|PG-TO263-3|



Datasheet www.infineon.com 

2018-01-11 

IKB15N65EH5 

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## High�speed�switching�series�5[th] �generation 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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## High�speed�switching�series�5[th] �generation 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||30.0<br>18.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||45.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||45.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||32.0<br>21.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||45.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||105.0<br>52.5|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.40|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.80|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|



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## High�speed�switching�series�5[th] �generation 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=15.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=15.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.42<br>1.39|1.70<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.15mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1400|50<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=15.0A|-|22.0|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|930|-|pF|
|Output capacitance|_C_oes||-|24|-||
|Reverse transfer capacitance|_C_res||-|4|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=15.0A,<br>_V_GE=15V|-|38.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|16|-|ns|
|Rise time|_t_r||-|17|-|ns|
|Turn-off delaytime|_t_d(off)||-|145|-|ns|
|Fall time|_t_f||-|22|-|ns|
|Turn-on energy|_E_on||-|0.40|-|mJ|
|Turn-off energy|_E_off||-|0.08|-|mJ|
|Total switchingenergy|_E_ts||-|0.48|-|mJ|



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## High�speed�switching�series�5[th] �generation 

|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=7.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|15|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|10|-|ns|
|Turn-off delaytime|_t_d(off)||-|145|-|ns|
|Fall time|_t_f||-|27|-|ns|
|Turn-on energy|_E_on||-|0.18|-|mJ|
|Turn-off energy|_E_off||-|0.03|-|mJ|
|Total switchingenergy|_E_ts||-|0.21|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=600A/µs|-|70|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.50|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|10.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-600|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=7.5A,<br>_di_F_/dt_=800A/µs|-|54|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.30|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|11.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-400|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|16|-|ns|
|Rise time|_t_r||-|18|-|ns|
|Turn-off delaytime|_t_d(off)||-|160|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.53|-|mJ|
|Turn-off energy|_E_off||-|0.10|-|mJ|
|Total switchingenergy|_E_ts||-|0.63|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=7.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|14|-|ns|
|Rise time|_t_r||-|10|-|ns|
|Turn-off delaytime|_t_d(off)||-|160|-|ns|
|Fall time|_t_f||-|28|-|ns|
|Turn-on energy|_E_on||-|0.27|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.31|-|mJ|



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## High�speed�switching�series�5[th] �generation 

**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=550A/µs|-|100|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.92|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|13.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-573|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=7.5A,<br>_di_F_/dt_=740A/µs|-|75|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.62|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|13.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-550|-|A/µs|



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## th High speed switching series5 generation 

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**----- Start of picture text -----**<br>
110 30<br>100<br>SS 25 Nor<br>90<br>SOE N<br>80<br>/ ASEEES PIXE<br>20<br>eT 70 NOE |<br>60<br>PEARSE PN<br>15<br>50<br>PNG<br>40<br>PETE 10<br>Bp 30  oNNT ae] A.<br>20 PEN 5<br>10<br>PoE)TN LEE<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>45 45<br>40 40<br>| ZI pt Ll<br>35 VGE=20V 35 VGE=20V<br>18V 18V<br>30 30<br>12V 12V<br>10V 10V<br>25 25<br>$6246 8V ie 8V an<br>20 7V 20 7V<br>6V 6V<br>15 15<br>ee) 5V 2a eee 5V ee<br>10 4V 10 4V<br>5 5<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>


Figure 3. Typical ( _T_ vj=25°C) 

Figure 4. Typical ( _T_ vj=150°C) 

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**----- Start of picture text -----**<br>
45 2.25<br>Tj=25°C IC=3,8A<br>Tj=150°C IC=7,5A<br>40 a IC=15A<br>T O ee<br>a 2.00 ee<br>35 p o pe<br>eee = oe<br>5 30 1.75 ae<br>i Fe —<br>pL eext eree<br>5 25 / th<br>a = 1.50 ==<br>pt a<br>20<br>Pe ee<br>15 1.25<br>Og 7 aa<br>One 10 oO<br>1.00<br>(7 ee ee ee<br>5<br>7A/ P| | ct ht hf<br>ey a<br>0 0.75<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>( V GE=15V)<br>pms td(off)d(off) Oe 1000 _ td(off)<br>tff tf<br>ttd(on)rtd(on)rd(on)rr I ttd(on)r eeee eeaeee<br>FE FEEREEEE = eee<br>100 T P 4 TT [e] [er]<br>ee eeeeee eeeeeeeeeeee ee 100 ra<br>or PN |} ceed ee ee ZO<br>g- ASCEee2ee2 —FSS — — —<br>- E REESE<br>go |PoE|PoE|| PetePeaU|PeaU|aU|| et|)|) -|g pFe{| {| {| { f{ f [| [| fer<br>10<br>»6 | |ES ES | Doar<br>6 | |ES 5 10 cheeryty | || ||<br>dO ee<br>[[|]] ee<br>|_|} [[+}]] ee<br>PECEEEEEEE  EREREEE EEE<br>1 1<br>0 5 10 15 20 25 30 35 40 45 50 10 20 30 40 50 60 70 80 90 100 110 120<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>I C<br>CEsat<br>V<br>t t<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
pms td(off)d(off) Oe<br>tff<br>ttd(on)rtd(on)rd(on)rr<br>FE FEEREEEE<br>100 T P 4<br>ee eeeeee eeeeeeeeeeee ee<br>or PN |} ceed ee ee<br>g- ASCEee2ee2<br>go |PoE|PoE|| PetePeaU|PeaU|aU|| et|)|)<br>10<br>»6 | |ES<br>dO<br>[[|]]<br>|_|} [[+}]]<br>PECEEEEEEE<br>1<br>0 5 10 15 20 25 30 35 40 45 50<br>I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical switching times as a function of<br>t<br>**----- End of picture text -----**<br>


Figure 8. Typical **resistor** 

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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, R G=39 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>


_T_ vj =150°C, _V_ CE=400V, 

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**----- Start of picture text -----**<br>
V GE =15/0V, I C<br>Figure E)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
100 [a t| e ttd(off)f p aA eeo<br>1 td(on) a a<br>a SSS tr ae es ee<br>a<br>a ee<br>=<br>a2 ee<br><==<br>O 10<br>E= aa<br>pop<br>1<br>25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C]<br>t<br>**----- End of picture text -----**<br>


Figure 9. 

(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =15A, _r_ G=39 , Dynamic test circuit in Figure E) 

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**----- Start of picture text -----**<br>
6.0<br>typ.<br>5.5<br>Q 5.0<br>=<br>4.5<br>A 4.0<br>Lu<br>ee¢ 3.5<br>-or |<br>uukK= 3.0 ls ~~NN<br>2.5<br>2.0<br>1.5<br>1.0<br>0 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C]<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 10. 

( _I_ C=0.15mA) 

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**----- Start of picture text -----**<br>
2.50 1.2<br>Eoff Eoff<br>2.25 Eon Eon<br>Ets Ets<br>ee L d ;<br>‘ 1.0 7<br>2.00<br>J | ttt le = “<br>op) / 7<br>Ww 1.75 7 (ep) Y<br>ip) 7; op)Ww 0.8 Z. Zz .<br>aa] 1.50 4 _I L oa “|<br>oO / O Uo a<br>ow yj 7 ow Y S<br>1.25 0.6<br>m7 5 Ww 7<br>Zz 7 4 Z 7<br>e)2 1.00 / / e)2 “lyy a<br>LL<br>OE 0.75 /| 7 O 0.4<br>a<br>= 5 =<br>7) ALO 7)<br>0.50<br>0.2<br>7 oo —_ |<br>0.25<br>y ao ane<br>0.00 Ate]_———_| | 0.0 cor<br>0 5 10 15 20 25 30 35 40 45 10 20 30 40 50 60 70 80 90 100 110 120<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, R G=39 Ω , Dynamic test circuit in V GE =15/0V, I C =15A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0.7 0.8<br>Eoff Eoff “ a<br>Eon Eon<br>Ets aa 0.7 Ets 7<br>0.6<br>7 eer e477 _—7 7vo Za Za<br>_— 7 0.6 ae<br>0.5<br>ikio) - nn _ — —| g” 7“Oevya<br>o _ o Y<br>fo)a_ao fo) 0.5 5<br>& 0.4 ~ & c<br>uw wi 0.4 7<br>Zz Z 7<br>Ww Ww Y 7<br>: 0.3 ef] tl : ; <<br>0.3<br>L<br>0.2<br>0.2<br>0.1<br>0.1<br>0.0 0.0<br>25 50 75 100 125 150 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>


Figure 13. 

(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =15A, _R_ G=39 ,Dynamic test circuit Figure E) 

Figure 14. 

**==> picture [154 x 28] intentionally omitted <==**

**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V GE=15/0V,<br>I C =15A, r G=39 , Dynamic test circuit in<br>Figure E)<br>**----- End of picture text -----**<br>


**==> picture [471 x 322] intentionally omitted <==**

**----- Start of picture text -----**<br>
16 1E+4<br>130V H Cies eT<br>520V Coes<br>14 / / HI Cres aee<br>/ ee ee<br>Ds ee ee<br>s AWA e e<br>S 12 1000 a r e ee ee ee ee<br>uw / a<br>oO~¢ / / / LL— aa es es<br>FE 10 2 [a<br>9 J, W Ce ee<br>bu: 8 J / owi 100 SS | ee| | eefT ee ee<br>==E ff rs)~¢o paPpaNTa a ee<br>Lu NNT<br>6<br>ul -—4 = a ee ee ee<br>: —_ O a a ee<br>*° Da [ e | A<br>4 10 aaa<br>2 aaa sseeeeie ee eeee eeee<br>0 1<br>0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=15A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


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**==> picture [479 x 283] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 a Ce SciU 1 eTel ,<br>_= Eeeeeeth A = ot7ee |<br>N4 CO2eee ea | TT2SSTAT<br>aT D=0.5 D=0.5 |<br>9 HHL. 0.2 TT aT HT THA. 0.2 ATTIIH<br>img NeC e as Ae 0.1 til TmgTe mati mi tlWi / Al 0.1 _C<br>=2a 0.1 =Com| Z A7ALL| eeeI) 0.050.02 |LL &= 0.1 DertTe0=A lll 0.050.02 oo|<br><x eet A a See a2 An we<br>S 7 | 0.01 On Tt PT TTA tT TT 0.01 i<br>oe I vt nS I aT Zz 1 a<br>single pulse single pulse<br>r En ea TT oe SCM Caan Se TT<br>F 2 AMD eI iP et et Hill<br>| PUTT | errin Lee UN TM) I TA LM rst ETT LT<br>SGCaerLan 56 Var<br>2 0.01 Ser ry see a 2 0.01 eA et IR; R e<br>o PT ea tT PT i Lat<br>FE IneVC -- Hi}[il oeo Ion 7 A amlil<br>- PIEAT TN chin, carn, Il) - PL III TTTPIT Te shim Costes ill<br>ATTYUM? i: CECT 1 TT 2 Toi 3 EET 4 ool 5 IEPUTA i: COU TT 1 CCT TT 2 ooo 3 4 5 Tool<br>ri[K/W]: 0.050353 0.577446 0.630979 0.121142 0.018932 ri[K/W]: 0.067415 0.782038 0.788573 0.146126 0.022837<br>τ i[s]: 4.7E-5 4.8E-4 3.4E-3 0.022142 0.19328 τ i[s]: 4.2E-5 4.8E-4 3.3E-3 0.022253 0.192244<br>0.001 | | 0.001 LT | |<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>


> Figure 17. IGBT ( _D_ = _t_ p/T) 

Figure 18. Diode function ( _D_ = _t_ p/T) 

**==> picture [474 x 285] intentionally omitted <==**

**----- Start of picture text -----**<br>
150 1.2<br>Tj=25°C, IF = 15A Tj=25°C, IF = 15A<br>135 Tj=150°C, IF = 15A Tj=150°C, IF = 15A<br>~ 1.0 _<br>120 |[ i |. =<br>AT! 105 “XN 9 _-<br>a 0.8<br>- ~ a<br>> 90 _—™~_ > O<br>75 0.6<br>Lu9) 60 Lu<br>ee 0.4 [| ttt<br>eto Ee ee<br>45<br>30<br>Baa<br>0.2<br>15<br>0 0.0<br>400 450 500 550 600 650 700 400 450 500 550 600 650 700<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>


Figure 19. 

( _V_ R=400V) 

## Figure 20. 

( _V_ R=400V) 

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**----- Start of picture text -----**<br>
25.0 -300<br>Tj=25°C, IF = 15A Tj=25°C, IF = 15A<br>22.5 Tj=150°C, IF = 15A Tj=150°C, IF = 15A<br>-350<br>“ \<br>20.0<br>= PTT ] Poa IN<br>K a -400 N<br>pf 17.5 f<br>ee . \<br>-450<br>x ee |<br>15.0<br>ee z<br>(o}<br>mT2 va ee L ee ee<br>fe) 12.5 © -500 \<br>Bolo \<br>10.0<br>phe fs -550<br>7.5<br>ul —_ 3<br>-600<br>5.0<br>-650<br>2.5<br>0.0 -700<br>400 450 500 550 600 650 700 400 450 500 550 600 650 700<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical peak reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>45 2.00<br>Tj=25°C IF=7,5A<br>L Tj=150°C Y f|/ fe IF=15A {ett<br>40 | IF=30A |<br>1.75<br>35<br>30<br>1.50<br>-=) 25 PLE LEE LAL :e) ad ee<br>: | 3 pap<br>° 0<br>e 20 E<br>S/= 1.25<br>:<br>15<br>/ eeee<br>10<br>1.00<br>5<br>PLil yar iy} (ap<br>0 0.75<br>0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I rr<br>/dt<br>rr<br>dI<br>I rrm<br>I F V F<br>**----- End of picture text -----**<br>


Figure 23. 

Figure 24. 

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**==> picture [86 x 38] intentionally omitted <==**

## High�speed�switching�series�5[th] �generation 

## **Package Drawing PG-TO263-3** 

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**==> picture [140 x 91] intentionally omitted <==**

|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||



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**----- Start of picture text -----**<br>
Datasheet<br>**----- End of picture text -----**<br>


V�2.1 2018-01-11 

IKB15N65EH5 

**==> picture [86 x 38] intentionally omitted <==**

## High�speed�switching�series�5[th] �generation 

## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


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Figure D. 

**==> picture [7 x 4] intentionally omitted <==**

**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

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## High�speed�switching�series�5[th] �generation 

## **Revision�History** 

IKB15N65EH5 

## **Revision:�2018-01-11,�Rev.�2.1** 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2018-01-11|Final data sheet|



15 

V�2.1 2018-01-11 

Datasheet 

## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/IKB15N65EH5ATMA1/igbt-30-a-165-v-105-w-650-to-263-d2pak-3-pins)
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- [Supplier page](https://es.farnell.com/infineon/ikb15n65eh5atma1/igbt-650v-30a-175deg-c-105w/dp/3267757)
---

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