# IGBT, 26 A, 1.5 V, 130 W, 600 V, TO-263 (D2PAK), 3 Pins

![Product image](https://novapart.co/image/farnell:3294649/)

**URL**: https://novapart.co/products/IKB15N60TATMA1/igbt-26-a-15-v-130-w-600-to-263-d2pak-3-pins
**SKU**: IKB15N60TATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.7260
**Stock**: 1000+
**Lead Time**: 218 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP IGBT3 |
| Power Dissipation | 130W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-263 (D2PAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 26A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3294649/)

TRENCHSTOP™ Series 

## Gofineon 

## IKB15N60T 

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode 

@, e/ | Ge Green 

C **Features:**  Very low  VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s G  Designed for frequency inverters for washing machines, fans, pumps and vacuum & E cleaners  TRENCHSTOP™ technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed  Positive temperature coefficient in VCE(sat)  Low EMI PG-TO263-3 

- Low Gate Charge 

- Qualified according to JEDEC[1] for target applications 

|**Parameter**|**Symbol**<br>~~=~~|**Value**<br>~~=~~|**Unit**<br>~~=~~|
|---|---|---|---|
|Collector-emitter voltage,_T_j≥ 25C|_V_C E<br>~~=~~|600<br>~~=~~|V<br>~~=~~|
|DC collector current, limited by_T_jmax<br>_T_C= 25C, value limited by bondwire<br>_T_C= 100C|_I_C<br>~~pf~~|26<br>23<br>~~pf~~|A<br>~~pf~~<br>~~a~~<br>~~Pf~~|
|Pulsed collector current,_t_plimited by _T_jmax|_I_Cpul s<br>~~pf~~|45<br>~~pf~~||
|Turn off safe operatingarea,_V_CE= 600V,_T_j= 175C,_t_p= 1µs|_-_<br>~~a~~|45<br>~~a~~||
|Diode forward current, limited by_T_jmax<br>_T_C= 25C, value limited by bondwire<br>_T_C= 100C|_I_F<br>~~a~~<br>~~Pf~~|26<br>23<br>~~a~~<br>~~Pf~~||
|Diodepulsed current,_t_plimited by _T_jmax|_I_Fpul s<br>~~Pf~~|45<br>~~Pf~~||
|Gate-emitter voltage|_V_G E<br>~~Pf~~<br>~~a~~|20<br>~~Pf~~<br>~~a~~|V<br>~~Pf~~<br>~~a~~|
|Short circuit withstand time2) <br>_V_GE= 15V,_V_CC400V,_T_j 150C|_t_SC<br>~~Pf~~|5<br>~~Pf~~|s<br>~~Pf~~|
|Power dissipation_T_C= 25C|_P_t ot<br>~~——-————~~|130<br>~~——-————~~|W<br>~~——-————~~|
|Operating junction temperature|_T_ j <br>~~——-————~~|-40...+175<br>~~——-————~~|C<br>~~——-————~~<br>~~———~~|
|Storage temperature|_T_stg<br>~~———~~|-55...+150<br>~~———~~||
|Solderingtemperature(reflow soldering, MSL1)|-<br>~~———~~|260<br>~~———~~||



- 1 J-STD-020 and JESD-022 

> 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 

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## TRENCHSTOP™ Series 

## IKB15N60T 

## **Thermal Resistance** 

|**Thermal Resistance**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Max. Value**|**Unit**|
|**Characteristic**|||||
|IGBT thermal resistance,<br>junction – case|_R_t hJC||1.15|K/W|
|Diode thermal resistance,<br>junction – case|_R_t hJC D||1.9||
|Thermal resistance,<br>junction – ambient|_R_t hJA|6cm² Cu|40||



## **Electrical Characteristic,** at _T_ j = 25 C, unless otherwise specified 

|**Electrical Characteristic,**at_T_j= 25|C, unless ot|herwise specified|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
||||**min.**|**Typ.**|**max.**||
|**Static Characteristic**|||||||
|Collector-emitter breakdown voltage|_V_( BR )C ES|_V_G E=0V,_I_C=0.2mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_C E( sat )|_V_G E= 15V,_I_C=15A<br>_T_j=25C<br>_T_ j=175C|-<br>-|1.5<br>1.9|2.05<br>-||
|Diode forward voltage|_V_F|_V_G E=0V,_I_F=15A<br>_T_j=25C<br>_T_ j=175C|-<br>-|1.65<br>1.6|2.05<br>-||
|Gate-emitter threshold voltage|_V_G E( t h)|_I_C=210µA,_V_C E=_V_GE|4.1|4.9|5.7||
|Zero gate voltage collector current|_I_CE S|_V_C E=600V,<br>_V_G E=0V<br>_T_j=25C<br>_T_j=175C|-<br>-|-<br>-|40<br>1000|µA|
|Gate-emitter leakage current|_I_GE S|_V_C E=0V,_V_G E=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_C E=20V,_I_C=15A|-|8.7|-|S|
|Integratedgate resistor|_RG int_|||-||Ω|



## **Dynamic Characteristic** 

|**Dynamic Characteristic**|||||||
|---|---|---|---|---|---|---|
|Input capacitance|_C_i ss|_V_C E=25V,<br>_V_G E=0V,<br>_f_=1MHz|-|860|-|pF|
|Output capacitance|_C_os s||-|55|-||
|Reverse transfer capacitance|_C_rs s||-|24|-||
|Gate charge|_Q_Gat e|_V_C C=480V,_I_C=15A<br>_V_G E=15V|-|87|-|nC|
|Internal emitter inductance<br>measured 5mm(0.197 in.)from case|_L_E||-|7|-|nH|
|Short circuit collector current1)|_I_C( SC )|_V_G E=15V,_t_SC5s<br>_V_C C= 400V,<br>_T_j 150C|-|137.5|-|A|



> 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 

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TRENCHSTOP™ Series 

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## IKB15N60T 

## **Switching Characteristic, Inductive Load,** at _T_ j=25 C 

|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**Typ.**|**max.**||
|**IGBT Characteristic**|||||||
|Turn-on delaytime|_t_d( o n)|_T_j=25C,<br>_V_C C=400V,_I_C=15A,<br>_V_G E=0/15V,_r_G=15,<br>_L_=154nH,_C_=39pF<br>_L_,_C_from Fig. E<br>Energy losses include<br>“tail” and diode reverse<br>recovery.|-|17|-|ns|
|Rise time|_t_r||-|11|-||
|Turn-off delaytime|_t_d( of f)||-|188|-||
|Fall time|_t_f||-|50|-||
|Turn-on energy|_E_o n||-|0.22|-|mJ|
|Turn-off energy|_E_o ff||-|0.35|-||
|Total switchingenergy|_E_t s||-|0.57|-||
|**Anti-Parallel Diode Characteristic**|||||||
|Diode reverse recoverytime|_t_rr|_T_j=25C,<br>_V_R=400V,_I_F=15A,<br>_di_F_/dt_=825A/s|-|34|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.24|-|µC|
|Diodepeak reverse recoverycurrent|_I_rr m||-|10.4|-|A|
|Diode peak rate of fall of reverse<br>recovery current during_t_b|_di_rr_/dt_||-|718|-|A/s|



**Switching Characteristic, Inductive Load,** at _T_ j=175 C 

|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**Typ. **|**max.**||
|**IGBT Characteristic**|||||||
|Turn-on delaytime|_t_d( o n)|_T_j=175C,<br>_V_C C=400V,_I_C=15A,<br>_V_G E=0/15V,_r_G=15,<br>_L_=154nH,_C_=39pF<br>_L_,_C_from Fig. E<br>Energy losses include<br>“tail” and diode reverse<br>recovery.|-|17|-|ns|
|Rise time|_t_r||-|15|-||
|Turn-off delaytime|_t_d( of f)||-|212|-||
|Fall time|_t_f||-|79|-||
|Turn-on energy|_E_o n||-|0.34|-|mJ|
|Turn-off energy|_E_o ff||-|0.47|-||
|Total switchingenergy|_E_t s||-|0.81|-||
|**Anti-Parallel Diode Characteristic**|||||||
|Diode reverse recoverytime|_t_rr|_T_j=175C<br>_V_R=400V,_I_F=15A,<br>_di_F_/dt_=825A/s|-|140|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.0|-|µC|
|Diodepeak reverse recoverycurrent|_I_rr m||-|14.7|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrent during _t_b|_di_rr_/dt_||-|495|-|A/s|



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## TRENCHSTOP™ Series 

## IKB15N60T 

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**----- Start of picture text -----**<br>
t p =2µs<br>40A 10µs<br>10A<br>T C=80°C<br>30A T C=110 ° C<br>50µs<br>20A<br>1A<br>Ic 1ms<br>10A<br>DC 10ms<br>Ic<br>0A 0.1A<br>10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V<br>COLLECTOR CURRENT COLLECTOR CURRENT<br>,  ,<br>I C I C<br>**----- End of picture text -----**<br>


_f_ , SWITCHING FREQUENCY 

**Figure 1. Collector current as a function of** 

**switching frequency** ( _T_ j  175C, _D =_ 0.5, _V_ CE = 400V, _V_ GE = 0/15V, _r_ G = 15) 

_V_ CE, COLLECTOR-EMITTER VOLTAGE 

**Figure 2. Safe operating area** ( _D =_ 0, _T_ C = 25C, _T_ j 175C; _V_ GE=0/15V) 

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**----- Start of picture text -----**<br>
120W<br>100W<br>80W<br>60W<br>40W<br>20W<br>0W<br>25°C 50°C 75°C 100°C 125°C 150°C<br>POWER DISSIPATION<br>tot,<br>P<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
25A<br>20A<br>15A<br>10A<br>5A<br>__  I cmax<br>---  max. current limited by bondwire<br>0A<br>25°C 50°C 75°C 100°C 125°C 150°C<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>


_T_ C, CASE TEMPERATURE 

**Figure 3. Power dissipation as a function of case temperature** ( _T_ j  175C) 

_T_ C, CASE TEMPERATURE 

**Figure 4. Collector current as a function of case temperature** ( _V_ GE  15V, _T_ j  175C) 

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## TRENCHSTOP™ Series 

## IKB15N60T 

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**----- Start of picture text -----**<br>
40A<br>35A<br>V GE =20V<br>30A<br>15V<br>25A 13V<br>11V<br>20A<br>9V<br>15A 7V<br>10A<br>5A<br>0A<br>0V 1V 2V 3V<br>V CE, COLLECTOR-EMITTER VOLTAGE<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>


**Figure 5. Typical output characteristic** ( _T_ j = 25°C) 

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**----- Start of picture text -----**<br>
35A<br>30A<br>25A<br>20A<br>15A<br>10A<br>T J=175°C<br>5A 25°C<br>0A<br>0V 2V 4V 6V 8V<br>V GE, GATE-EMITTER VOLTAGE<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>


**Figure 7. Typical transfer characteristic** (VCE=20V) 

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**----- Start of picture text -----**<br>
40A<br>35A<br>V GE =20V<br>30A 15V<br>13V<br>25A<br>11V<br>20A<br>9V<br>15A 7V<br>10A<br>5A<br>0A<br>0V 1V 2V 3V<br>V CE, COLLECTOR-EMITTER VOLTAGE<br>Figure 6. Typical output characteristic<br>( T j = 175°C)<br>2.5V<br>I C =30A<br>2.0V<br>1.5V IC =15A<br>1.0V I C =7.5A<br>0.5V<br>0.0V<br>0°C 50°C 100°C 150°C<br>T J, JUNCTION TEMPERATURE<br>COLLECTOR CURRENT<br>,<br>I C<br>EMITT SATURATION VOLTAGE<br>-<br>COLLECTOR<br>CE(sat),<br>V<br>**----- End of picture text -----**<br>


**Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature** ( _V_ GE = 15V) 

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## TRENCHSTOP™ Series 

## IKB15N60T 

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**----- Start of picture text -----**<br>
t<br>d(off)<br>100ns<br>t f<br>t<br>d(on)<br>10ns<br>t r<br>1ns<br>0A 5A 10A 15A 20A 25A<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
t<br>d(off)<br>100ns<br>t f<br>t<br>d(on)<br>t r<br>10ns<br>    <br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br>


## _IC_ , COLLECTOR CURRENT 

**Figure 9. Typical switching times as a function of collector current** (inductive load, _T_ J=175°C, _V_ CE = 400V, VGE = 0/15V, _r_ G = 15Ω, Dynamic test circuit in Figure E) 

_R_ G, GATE RESISTOR 

**Figure 10. Typical switching times as a function of gate resistor** (inductive load, _T_ J = 175°C, _V_ CE= 400V, VGE = 0/15V, _I_ C = 15A, Dynamic test circuit in Figure E) 

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**----- Start of picture text -----**<br>
t<br>d(off)<br>100ns<br>t f<br>t<br>d(on)<br>10ns<br>t r<br>25°C 50°C 75°C 100°C 125°C 150°C<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br>


_T_ J, JUNCTION TEMPERATURE 

**Figure 11. Typical switching times as a function of junction temperature** (inductive load, _V_ CE = 400V, VGE = 0/15V, _I_ C = 15A, _r_ G=15Ω, Dynamic test circuit in Figure E) 

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**----- Start of picture text -----**<br>
7V<br>6V<br>max.<br>typ.<br>5V<br>4V min.<br>3V<br>2V<br>1V<br>0V<br>-50°C 0°C 50°C 100°C 150°C<br>EMITT TRSHOLD VOLTAGE<br>-<br>GATE<br>GE(th ) ,<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
T J, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br>


**Figure 12. Gate-emitter threshold voltage as a function of junction temperature** ( _I_ C = 0.21mA) 

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## IKB15N60T 

## TRENCHSTOP™ Series 

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**----- Start of picture text -----**<br>
1.6 mJ *)  E on  and  E ts  include losses<br>   due to diode recovery E *<br>1.4 mJ ts<br>1.2 mJ<br>1.0 mJ<br>0.8 mJ<br>0.6 mJ<br>E<br>off<br>0.4 mJ<br>E *<br>on<br>0.2 mJ<br>    <br>R G, GATE RESISTOR<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1.6mJ * )  E on  and  E ts include losses<br>   due to diode recovery<br>E ts*<br>1.2mJ<br>E off<br>0.8mJ<br>E on*<br>0.4mJ<br>0.0mJ<br>0A 5A 10A 15A 20A 25A<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br>


## _IC_ , COLLECTOR CURRENT 

**Figure 13. Typical switching energy losses as a function of collector current** (inductive load, _T_ J = 175°C, _V_ CE = 400V, VGE = 0/15V, _r_ G = 15Ω, Dynamic test circuit in Figure E) 

## **Figure 14. Typical switching energy losses as a function of gate resistor** (inductive load, _T_ J = 175°C, 

- _V_ CE = 400V, VGE = 0/15V, _I_ C = 15A, Dynamic test circuit in Figure E) 

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**----- Start of picture text -----**<br>
0.9mJ<br>*)  E on and  E ts include losses<br>0.8mJ     due to diode recovery<br>0.7mJ<br>E ts*<br>0.6mJ<br>0.5mJ<br>0.4mJ E off<br>0.3mJ<br>E on*<br>0.2mJ<br>25°C 50°C 75°C 100°C 125°C 150°C<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
T J, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br>


## **Figure 15. Typical switching energy losses as a function of junction temperature** 

(inductive load, _V_ CE = 400V, VGE = 0/15V, _I_ C = 15A, _r_ G = 15Ω, Dynamic test circuit in Figure E) 

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**----- Start of picture text -----**<br>
1.2mJ<br>*)  E on and  E ts include losses<br>    due to diode recovery<br>1.0mJ<br>0.8mJ<br>E ts*<br>0.6mJ<br>E off<br>0.4mJ<br>0.2mJ<br>E on*<br>0.0mJ<br>300V 350V 400V 450V<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br>


## _VCE_ , COLLECTOR-EMITTER VOLTAGE 

## **Figure 16. Typical switching energy losses as a function of collector emitter voltage** 

(inductive load, _T_ J = 175°C, _V_ GE = 0/15V, _I_ C = 15A, _r_ G = 15Ω, Dynamic test circuit in Figure E) 

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## TRENCHSTOP™ Series 

## IKB15N60T 

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**----- Start of picture text -----**<br>
1nF<br>C iss<br>15V 120V<br>480V<br>10V<br>100pF<br>5V C oss<br>C rss<br>0V<br>0nC 20nC 40nC 60nC 80nC 100nC 10pF<br>0V 10V 20V 30V 40V 50V<br>EMITTER VOLTAGE<br>-<br>CAPACITANCE<br>c,<br>GATE<br>,<br>GE<br>V<br>**----- End of picture text -----**<br>


_Q_ GE, GATE CHARGE 

**Figure 17. Typical gate charge** ( _I_ C=15 A) 

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**----- Start of picture text -----**<br>
V CE, COLLECTOR-EMITTER VOLTAGE<br>**----- End of picture text -----**<br>


**Figure 18. Typical capacitance as a function of collector-emitter voltage** ( _V_ GE=0V, _f_ = 1 MHz) 

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**----- Start of picture text -----**<br>
200A<br>150A<br>100A<br>50A<br>0A<br>12V 14V 16V 18V<br>COLLECTOR CURRENT<br>, short circuit<br>I C(sc)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
12µs<br>10µs<br>8µs<br>6µs<br>4µs<br>2µs<br>0µs<br>10V 11V 12V 13V 14V<br>SHORT CIRCUIT WITHSTAND TIME<br>t SC,<br>**----- End of picture text -----**<br>


_V_ GE, GATE-EMITTETR VOLTAGE 

**Figure 19. Typical short circuit collector current as a function of gateemitter voltage** 

( _V_ CE  400V, _T_ j  150C) 

_V_ GE, GATE-EMITETR VOLTAGE 

**Figure 20. Short circuit withstand time as a** 

- **function of gate-emitter voltage** ( _V_ CE=400V _,_ start at _T_ J _=_ 25°C, _T_ Jmax<150°C) 

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## TRENCHSTOP™ Series 

## IKB15N60T 

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**----- Start of picture text -----**<br>
10 0K/W<br>D =0.5 10 0K/W D =0.5<br>0.2<br>0.2 R , ( K / W )  , * ( s )<br>R , ( K / W )  , ( s ) 0.1 0.06991  1.11 10 [-1] 6<br>0.13265 5.67*10 [-2] 0.43036 2.552*10 [-2 ]<br>0.1 0.37007  1.558*10 [-2 ] 0.53839 3.914*10 [-3]<br>-1 0.30032  2.147*10 [-3] 0.05 0.58718 4.92*10 [-4]<br>10 K/W 0.34701  2.724*10 [-4] 10 -1K/W 0.23695  7.19*10 [-5]<br>R 1 R 2 0.02 0.03700 7.4*10 [-6]<br>R 1 R 2<br>0.05 0.01<br>0.02 C 1=1/ R 1 C 2=2/ R 2<br>0.01 C 1=1/ R 1 C 2=2/ R 2<br>single pulse single pulse<br>10 -2K/W 10 -2K/W<br>1µs 10µs 100µs 1ms 10ms 100ms 1µs 10µs 100µs 1ms 10ms 100ms<br>TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE<br>,  ,<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br>


_t_ P, PULSE WIDTH 

**Figure 21. IGBT transient thermal impedance** ( _D = t_ p / _T_ ) 

_t_ P, PULSE WIDTH 

## **Figure 22. Diode transient thermal impedance as a function of pulse width** 

( _D_ = _t_ P/ _T_ ) 

**==> picture [231 x 239] intentionally omitted <==**

**----- Start of picture text -----**<br>
200ns<br>T =175°C<br>J<br>160ns<br>120ns<br>°<br>80ns T =25 C<br>J<br>40ns<br>0ns<br>400A/µs 600A/µs 800A/µs<br>di F /dt , DIODE CURRENT SLOPE<br>REVERSE RECOVERY TIME<br>,<br>t rr<br>**----- End of picture text -----**<br>


**Figure 23. Typical reverse recovery time as a function of diode current slope** ( _V_ R=400V, _I_ F=15A, Dynamic test circuit in Figure E) 

**==> picture [231 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0µC T J=175 ° C<br>0.8µC<br>0.6µC<br>T =25°C<br>0.4µC J<br>0.2µC<br>0.0µC<br>400A/µs 600A/µs 800A/µs<br>REVERSE RECOVERY CHARGE<br>,<br>rr<br>Q<br>**----- End of picture text -----**<br>


_di_ F _/dt_ , DIODE CURRENT SLOPE 

## **Figure 24. Typical reverse recovery charge as a function of diode current slope** 

( _V_ R = 400V, _I_ F = 15A, Dynamic test circuit in Figure E) 

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## TRENCHSTOP™ Series 

## IKB15N60T 

**==> picture [473 x 220] intentionally omitted <==**

**----- Start of picture text -----**<br>
16A T =175°C<br>J<br>-700A/µs<br>14A T =175°C<br>J<br>-600A/µs<br>12A<br>-500A/µs<br>10A<br>° T =25°C<br>T =25 C J<br>J -400A/µs<br>8A<br>-300A/µs<br>6A<br>-200A/µs<br>4A<br>-100A/µs<br>2A<br>0A/µs<br>0A 400A/µs 600A/µs 800A/µs<br>400A/µs 600A/µs 800A/µs<br>DIODE PEAK RATE OF FALL<br>,<br>REVERSE RECOVERY CURRENT /dt<br>I rr, dirr OF REVERSE RECOVERY CURRENT<br>**----- End of picture text -----**<br>


**==> picture [125 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
di F /dt , DIODE CURRENT SLOPE<br>**----- End of picture text -----**<br>


## **Figure 25. Typical reverse recovery current as a function of diode current slope** 

( _V_ R = 400V, _I_ F = 15A, Dynamic test circuit in Figure E) 

## _di_ F _/dt_ , DIODE CURRENT SLOPE 

**Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope** ( _V_ R=400V, _I_ F=15A, Dynamic test circuit in Figure E) 

**==> picture [235 x 235] intentionally omitted <==**

**----- Start of picture text -----**<br>
40A<br>30A<br>20A<br>T J =25°C<br>175°C<br>10A<br>0A<br>0V 1V 2V<br>V F, FORWARD VOLTAGE<br>FORWARD CURRENT<br>,<br>I F<br>**----- End of picture text -----**<br>


**Figure 27. Typical diode forward current as a function of forward voltage** 

**==> picture [231 x 215] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0V I F =30A<br>1.5V 15A<br>7.5A<br>1.0V<br>0.5V<br>0.0V<br>0°C 50°C 100°C 150°C<br>FORWARD VOLTAGE<br>,<br>F<br>V<br>**----- End of picture text -----**<br>


**==> picture [119 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
T J, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br>


**Figure 28. Typical diode forward voltage as a function of junction temperature** 

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## IKB15N60T 

## TRENCHSTOP™ Series 

**==> picture [85 x 12] intentionally omitted <==**

**----- Start of picture text -----**<br>
PG-TO263-3<br>**----- End of picture text -----**<br>


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## IKB15N60T 

## TRENCHSTOP™ Series 

**Figure A. Definition of switching times** 

**==> picture [189 x 303] intentionally omitted <==**

**----- Start of picture text -----**<br>
i,v<br>di F /dt t r r =t S + t F<br>“a Q r r =Q S + Q F<br>t<br>a r r<br>I F t S t F<br>I Q S Q F 10%  I r r m t<br>r r m 90%  I di r r /dt V R<br>r r m<br>Figure C. Definition of diodes<br>switching characteristics<br>1 2 n<br>r1 r 2 r n<br>T (t)j<br>p(t) r1 r 2 r n<br>T C<br>**----- End of picture text -----**<br>


**Figure D. Thermal equivalent circuit** 

**Figure B. Definition of switching losses** 

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IKB15N60T 

TRENCHSTOP™ Series 

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## **Published by Infineon Technologies AG 81726 Munich, Germany © 2015 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( **www.infineon.com** ) **.** 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

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---

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