# IGBT, 15 A, 1.6 V, 33.3 W, 650 V, TO-220, 3 Pins

![Product image](https://novapart.co/image/farnell:2363283/)

**URL**: https://novapart.co/products/IKA15N65F5XKSA1/igbt-15-a-16-v-333-w-650-to-220-3-pins
**SKU**: IKA15N65F5XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.7440
**Stock**: 500+
**Lead Time**: 141 days (indicative)

## Description

DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:33.3W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No. of Pins:3Pins;

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 |
| Power Dissipation | 33.3W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-220 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 15A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2363283/)

## IGBT 

High speed 5 FAST IGBT in TRENCHSTOP _ TM 5 technology copacked with RAPID 1 

## IKA15N65F5 

IKA15N65F5 

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**----- Start of picture text -----**<br>
High speed 5 FAST IGBT in TRENCHSTOP_ TM 5 technology copacked with<br>RAPID 1 fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed F5 technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ 650V breakdown voltage<br>G<br>«Low Q G E<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant »<br>*« Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>Applications: a.9"/<br>* Solar converters /<br>¢ Uninterruptible power supplies<br>* Welding converters<br>* Mid to high range switching frequency converters<br>G<br>C<br>E<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKA15N65F5|650V|15A|1.6V|175°C|K15EF5|PG-TO220-3 FP|



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## High�speed�switching�series�fifth�generation 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 

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## High�speed�switching�series�fifth�generation 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emitter voltage|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||14.0<br>8.5|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||45.0|A|
|Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||45.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||12.3<br>7.3|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||45.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||33.3<br>16.7|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|



## **Thermal�Resistance** 

|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||4.50|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||5.60|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||65|K/W|



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## High�speed�switching�series�fifth�generation 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=15.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.80<br>1.90|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=9.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.15mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>4000.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=15.0A|-|22.0|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|930|-|pF|
|Output capacitance|_C_oes||-|24|-||
|Reverse transfer capacitance|_C_res||-|4|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=15.0A,<br>_V_GE=15V|-|38.0|-|nC|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=7.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns|
|Rise time|_t_r||-|7|-|ns|
|Turn-off delaytime|_t_d(off)||-|150|-|ns|
|Fall time|_t_f||-|16|-|ns|
|Turn-on energy|_E_on||-|0.13|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.17|-|mJ|



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## High�speed�switching�series�fifth�generation 

|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|4|-|ns|
|Turn-off delaytime|_t_d(off)||-|190|-|ns|
|Fall time|_t_f||-|10|-|ns|
|Turn-on energy|_E_on||-|0.04|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.06|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=7.5A,<br>_di_F_/dt_=1000A/µs|-|50|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.19|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|8.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-190|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=1000A/µs|-|22|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.10|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|8.6|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-620|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=7.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|16|-|ns|
|Rise time|_t_r||-|10|-|ns|
|Turn-off delaytime|_t_d(off)||-|190|-|ns|
|Fall time|_t_f||-|5|-|ns|
|Turn-on energy|_E_on||-|0.18|-|mJ|
|Turn-off energy|_E_off||-|0.06|-|mJ|
|Total switchingenergy|_E_ts||-|0.24|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|15|-|ns|
|Rise time|_t_r||-|4|-|ns|
|Turn-off delaytime|_t_d(off)||-|230|-|ns|
|Fall time|_t_f||-|30|-|ns|
|Turn-on energy|_E_on||-|0.06|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.08|-|mJ|



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High�speed�switching�series�fifth�generation 

**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=7.5A,<br>_di_F_/dt_=1000A/µs|-|67|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.39|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|9.6|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-140|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=1000A/µs|-|35|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.20|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|10.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-360|-|A/µs|



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## High speed switching series fifth generation 

## IKA15N65F5 

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**----- Start of picture text -----**<br>
35<br>a<br>P| eee oe re | I<br>Pt PALIN AST aS 30 Nf oP of pod<br>ANN aZNilll| x<br>10 25<br>AUSTIN 2 LAN TE [LL]<br>Bb2 pf]EERIE| NeASAIN Zz \<br>ge PORN| tp=1µs \ L & 20 EV<br>10µs<br>3 Ae SSN a \<br>O 50µs ag 15<br>2 1 100µs<br>fe) re e)<br>200µs 10<br>© _—PaeesCOrNEER © \<br>500µs<br>TT<br>= DC OE 5 PF Pt IN<br>er |||<br>itr<br>0.1 0<br>TSS LE |EN<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V. temperature<br>Recommended use at V GE ≥ 7.5V) ( T vj ≤ 175°C)<br>I C P tot<br>**----- End of picture text -----**<br>


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14.0 45<br>\ 40 Reeve<br>12.0<br>\ Ps! i f<br>N SS<br>35 VGE=20V<br>10.0 18V<br>plo: PN). : 30 | CHaye J<br>Ww 12V Ih<br>Ww ON de ace<br>8.0 25 10V<br>8V<br>Kb Re<br>20<br>6.0 7V<br>Ww[NOWw penL<br>6V<br>15<br>4.0 5V<br>PECAN° Yo a ASALINN hi<br>10<br>4V<br>2.0<br>Eee Vom<br>5<br>LN EZ RR\<br>0.0 0<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>**----- End of picture text -----**<br>


8 

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**----- Start of picture text -----**<br>
45 45<br>Tj=25°C<br>Tj=150°C<br>40 40<br>PP; yA) EE<br>= Ly / ds<br>35 VGE=20V ee 35 e<br>z 18V — Yi\ =<br>30 30<br>12V<br>fi _——-Ff ni<br>ec 25 10V _ |fyfy &c 25<br>) / )<br>8V<br>fe) 20 HY as | 20<br>7V<br>; MYee ey, «a fe):<br>6V<br>= 15 Lit = 15 ’<br>5V<br>SE 10 NOK— W& 10 /<br>4V<br>y,<br>5 5<br>PSK TT OL<br>PASa OL——|__—<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=150°C) ( V CE=20V)<br>I C I C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
2.00 1000<br>e IICC=3,8A=7,5A e - aoc i1| ttd(off)f ee eSa eeee<br>S IC=15A td(on) es ee<br>tr<br>o = | Ue ——<br>1.75<br>= Se nne<br>el rd we | a eeeee<br>p fee PER EEE<br>100<br>< p ° T n F _——— S —  — ——  —F<br>“” 1.50 uw a a a<br>a = a ee<br>ESS SE<br>Bey ee ee eee<br>E SS O rr ee ee<br>pe |) Ee<br>1.25<br>S E  |- “<br>Ww L | 10 |) SSSeo<br>aaPpa totJ a Pea<br>(e) po |<br>1.00<br>Ee eee<br>0.75 1<br>0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 45<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>


Figure 7. Typical a function ( _V_ GE=15V) 

Figure 8. 

(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=39 Ω , Dynamic test Figure E) 

9 

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**----- Start of picture text -----**<br>
1000 a SS ES ES eS 1000 a a<br>1 t td(off) a he t td(off) a<br>| tf tf<br>td(on) td(on)<br>| = tr a ee[—— ee || = tr eea A ee ee<br>re ee ee<br>————————<br>a n eee ee ee ee eeee<br>— 100 a a a ee ee — 100 a ss<br>uwn —— eeeeeee eee een OE?) a<br>= poa a a a | =| a eea a ee ee<br>F a ee ee a eeee<br>O a a ee a ee<br>a<br>= eo _ =<br>ep)Bfs 10 okabeeaa asees keeeeteeeeeee | ep)- 10 aa reSSrr eeeS eeee a e<br>aeeer eeSS SS pona a a<br>a ees ee ee a e e<br>a a ee ee ee eee a es es<br>a a ee eee reeee ee ee ee<br>1 1<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =7,5A,Dynamic test circuit in I C =7,5A, r G=39 ,Dynamic test circuit in<br>Figure E) Figure E)<br>5.5 1.6<br>Yo<br>typ. Eoff<br>_> 5.0 min.max. 1.4 EEonts 7<br>4.5<br>F 7<br>1.2<br>ee yA £ Z<br>(a) 4.0 e ~ _ e /<br>i ~~. aN a / ‘<br>1.0<br>are<br>3.5<br>SP KL [Rd]<br>0.8<br>3.0<br>fvBPs)~ PANS~~ ‘S\| 3G /< /<br>E-- 0.6<br>~<br>2.5<br>uwuE 0.4 ‘| 7<br>Ee 2.0 NA = i |Z A<br>° SOn Leei 7<br>0.2<br>1.5 Be<br>1.0 0.0<br>PPT [Py)] \ va ea<br>0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 45<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t t<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 11. Gate-emitter of junction ( _I_ C=0.15mA) 

Figure 12. 

(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=39 Ω ,Dynamic test Figure E) 

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**----- Start of picture text -----**<br>
0.35 0.300<br>Eoff Eoff<br>Eon 0.275 Eon<br>Ets Ets<br>0.30<br>> Lat > 0.2500.225 Ff a | |<br>0.25<br>op)7) “a “— = 7)Q 0.200 Loo aaa<br>0.20 0.175<br>7 — —_—<br>0.150<br>x “ Lo a x = _o<br>0.15 0.125<br>OL7=O 0.100<br>0.10<br>0.075<br>By ——=—<br>0.050<br>0.05<br>0.025<br>0.00 0.000<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>E E<br>**----- End of picture text -----**<br>


Figure 13. 

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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, I C =7,5A, Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>


Figure 14. 

(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =7,5A, _r_ G=39 ,Dynamic test circuit in Figure E) 

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**----- Start of picture text -----**<br>
0.300 16<br>Eoff 130V<br>0.275 Eon 520V<br>Ets 14<br>[= J } Ed ) | yy<br>0.250<br>ee eee 7<br>=<br>0.225 12<br>”<br>7 Ww /<br>a) 0.200 < /<br>10<br>en ed ae 4<br>0.175<br>> >< < g /<br>ft 0.150 4 rm 8 7<br>iz oe vLZa F=/<br>0.125<br>6<br>r<br>0.100<br>Ee /<br>0.075 4<br>0.050<br>2<br>PRS Ae ee<br>0.025<br>0.000 0<br>200 250 300 350 400 450 500 0 5 10 15 20 25 30 35 40<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>


Figure 15. 

Figure 16. Typical ( _I_ C=15A) 

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**----- Start of picture text -----**<br>
T vj =150°C, V GE=15/0V,<br>**----- End of picture text -----**<br>


_I_ C =7,5A, _r_ G=39 Figure E) 

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IKA15N65F5 

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**----- Start of picture text -----**<br>
e C s iss Toe<br>Coss<br>Crss<br>[-= | -—}—f = LO TE eT<br>my el<br>1000<br>D=0.5<br>aa a 2 1 aN NN ei Oe? allli 0 .2 Lt<br>LL Lr ae 0.1<br>S op) Cr aC | |<br>0.05<br>uu a a a 7) FAR AHH THE<br>S 100 Vs ee ee ul SE TT eee 0.02 ele<br>~¢ Ea————— en ae a XZ Aea pe a 0.01<br>oO6 (AMeee I<br>ES esGe a Wi ppl ees J single pulse<br>S<br>eeee 0.1 Dy 0nT<br>1S) ee eee Po 4-~~| 5 Zea ee<br>° \ Me<br>\. Lu YT AT TTTT<br>10 Ww Th<br>SSS a 072A A<br>a es es es<br>ape > HITATTT) CHT ne, cttce — |Il<br>a AAA A<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.2571578 0.5731833 0.4460929 0.5209172 1.804766 0.8978826<br>τ i[s]: 1.8E-4 1.2E-3 9.1E-3 0.1021129 1.367234 7.180227<br>1 Poteeot  ee ee 0.01 | CT TT TT<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal resistance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>CT TT Tl hero 90 Ss |<br>Tj=25°C, IF = 7.5A<br>:= To A aera| 80 pei e Tj=150°C, IF = 7.5A I ] | |[||<br>HAT ——<br>1<br>O Series eee 720i See D=0.5 HIE] | \<br>Z Ee Sea 0.2 oo N<br>FED PeraPTI CAVA Crs En 0.1 | | 2Ss 70 \ ~<br>0.05<br>0.02<br>ee 0.1 mc<br>0.01 60<br>s—| ———————— oe uw<br>single pulse<br>CS ee PN ELE PN<br>- A WW ENONN<br>+ COANE) 2 50 |<br>(ep)2 0.01 LAMM ieee eft UPMTT<br>Z / Ri Ro Ww<br>F YT0faeeeeeeesTi tT (Hl I!) ot 40 P| |— |—ee| |<br>oH i: 1  He 2 3 4 5 6 Pt | fff<br>ri[K/W]: 0.9520941 1.171948 0.5287944 0.4647577 1.671981 0.8104246<br>τ i[s]: 2.1E-4 1.1E-3 8.9E-3 0.09325149 1.367755 7.182978<br>0.001 30<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100 600 800 1000 1200 1400 1600 1800 2000<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>C<br>c)th(j-<br>Z<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>


Figure 19. Diode function ( _D_ = _t_ p/T) 

Figure 20. Typical of diode ( _V_ R=400V) 

12 

IKA15N65F5 

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**----- Start of picture text -----**<br>
0.50 17.5<br>Tj=25°C, IF = 7.5A Tj=25°C, IF = 7.5A<br>0.45 a Tj=150°C, IF = 7.5A e Tj=150°C, IF = 7.5A e<br>e e  |<br>| T T T]<br>eg2 0.40 LLa= TT [i] [tt}.] = = 15.0 | YYi<br>Ww Kk 7<br>Be<br>ina 0.35 iad 7<br><x o<br>r a)<br>ee ee eee<br>>ee>Oeea 0.300.250.20 a Ww= 12.510.0 eez aaeZO ae<br>0.15<br>itor cr eeuaae<br>ootee 0.10 a 7.5 ee4 eee<br>ERR Cees<br>0.05<br>0.00 5.0<br>600 800 1000 1200 1400 1600 1800 2000 600 800 1000 1200 1400 1600 1800 2000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery charge as a Figure 22. Typical reverse recovery current as a<br>function of diode current slope function of diode current slope<br>( V R=400V) ( V R=400V)<br>0 27<br>Tj=25°C, IF = 7.5A Tj=25°C<br>Tj=150°C, IF = 7.5A Tj=150°C<br>24<br>-50 a ee ee ee ee<br>a<br>21<br>z -100<br>18<br>-150<br>15<br>><br>P|2NNO UTE<br>-200<br>3a & 12<br>-250<br>8 PN = i]<br>9<br>et NANS. y<br>ne} UNE<br>-300<br>\ 6<br>-350<br>ee 3 ee<br>-400 0<br>600 800 1000 1200 1400 1600 1800 2000 0.0 0.5 1.0 1.5 2.0 2.5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>Q rr I rr<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>


Figure 23. 

Figure 24. 

( _V_ R=400V) 

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IKA15N65F5 

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**----- Start of picture text -----**<br>
2.0<br>IF=4,5A<br>IF=9A<br>IF=18A<br>p e<br>1.8 e<br>eeLu 1.6 e e<br>xt<br>Kkee<br>I<br>><br>aeQ 1.4 eee<br>m4<br>Se fe<br>=<br>° 1.2 = |<br>ee ee<br>pe<br>1.0<br>0.8<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>


Figure 25. 

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IKA15N65F5 

High�speed�switching�series�fifth�generation 

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## **Package Drawing PG-TO220-3-FP** 

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IKA15N65F5 

High�speed�switching�series�fifth�generation 

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## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


**==> picture [153 x 99] intentionally omitted <==**

**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>


Figure C. **Definition of diode switching characteristics** 

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**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

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## IKA15N65F5 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2012-11-09|Preliminarydatasheet|
|1.2|2013-12-17|New MarkingPattern|
|2.1|2015-05-05|Final data sheet|



## **Information** 

## **Warnings** 

endangered. 

17 



## Links

- [View this product on Novapart](https://novapart.co/products/IKA15N65F5XKSA1/igbt-15-a-16-v-333-w-650-to-220-3-pins)
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- [Supplier page](https://es.farnell.com/infineon/ika15n65f5xksa1/igbt-650v-15a-to220-3/dp/2363283)
---

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