# IGBT, 15 A, 1.5 V, 40 W, 650 V, TO-220, 3 Pins

![Product image](https://novapart.co/image/farnell:3227591/)

**URL**: https://novapart.co/products/IKA10N65ET6XKSA2/igbt-15-a-v-40-w-650-to-220-3-pins
**SKU**: IKA10N65ET6XKSA2
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.0400
**Stock**: 200+
**Lead Time**: 190 days (indicative)

## Description

Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP |
| Power Dissipation | 40W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-220 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 15A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3227591/)

## IKA10N65ET6 

CE(sat) * Maximum junction temperature 175°C ¢ Short circuit withstand time 3us Trench and field-stop technology for 650V * very tight parameter distribution * high ruggedness, temperature stable behavior * low V CEsat and positive temperature coefficient * Low gate charge Q G ¢ Pb-free lead plating; ROHS compliant ¢ Very soft, fast recovery anti-parallel Rapid diode *« Complete product spectrum and PSpice Models: www.infineon.com/igbt 

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|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKA10N65ET6|650V|10A<br>1)|1.5V<br>2)|175°C|K10EET6|PG-TO220-3 FP|



1) Limited by maximum junction temperature. Applicable for TO-220 Standard package. 

- 2) Measured under conditions specified on page 4. 

Datasheet www.infineon.com 

2017-11-30 

IKA10N65ET6 

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## TRENCHSTOP™�IGBT6 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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## TRENCHSTOP™�IGBT6 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax1)<br>_T_c=25°C<br>_T_c=100°C|_I_C||15.0<br>9.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||42.5|A|
|Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||42.5|A|
|Diodeforwardcurrent,limitedby_T_vjmax1)<br>_T_c=25°C<br>_T_c=100°C|_I_F||15.0<br>9.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||42.5|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤360V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||3|µs|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||40.0<br>20.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M2.5 screw, PG-TO220-3 FP<br>Maximum of mounting processes: 3|_M_||0.5|Nm|
|IsolationvoltageRMS,_f_=50/60Hz,_t_=1min|_V_isol||2500|V|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|3.71|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|5.40|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|



1) Limited by maximum junction temperature. Applicable for TO220 standard package. 

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## TRENCHSTOP™�IGBT6 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown<br>voltage1)|_V_(BR)CES|_V_GE=0V,_I_C=0.10mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=8.5A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.50<br>1.65<br>1.75|1.90<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=8.5A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.43<br>1.39|1.90<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.15mA,_V_CE=_V_GE|4.8|5.6|6.4|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>360|30<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=8.5A|-|8.7|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|790|-|pF|
|Output capacitance|_C_oes||-|41|-||
|Reverse transfer capacitance|_C_res||-|12|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=8.5A,<br>_V_GE=15V|-|27.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤360V,<br>_t_SC≤3µs<br>_T_vj=150°C|-|80|-|A|



1) Measured with filter network. 

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## TRENCHSTOP™�IGBT6 

## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=8.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=47.0Ω,_R_G(off)=47.0Ω,<br>_L_σ=30nH,_C_σ=150pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|30|-|ns|
|Rise time|_t_r||-|18|-|ns|
|Turn-off delaytime|_t_d(off)||-|106|-|ns|
|Fall time|_t_f||-|46|-|ns|
|Turn-on energy|_E_on||-|0.20|-|mJ|
|Turn-off energy|_E_off||-|0.07|-|mJ|
|Total switchingenergy|_E_ts||-|0.27|-|mJ|



**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** 

|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=8.5A,<br>_di_F_/dt_=450A/µs|-|51|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.21|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|5.7|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-440|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=8.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=47.0Ω,_R_G(off)=47.0Ω,<br>_L_σ=30nH,_C_σ=150pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|27|-|ns|
|Rise time|_t_r||-|18|-|ns|
|Turn-off delaytime|_t_d(off)||-|123|-|ns|
|Fall time|_t_f||-|72|-|ns|
|Turn-on energy|_E_on||-|0.22|-|mJ|
|Turn-off energy|_E_off||-|0.13|-|mJ|
|Total switchingenergy|_E_ts||-|0.35|-|mJ|



**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=8.5A,<br>_di_F_/dt_=450A/µs|-|92|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.46|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-205|-|A/µs|



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45<br>eeaeeeee el| |<br>FA a 4035 PtNeett td<br>10<br>cs tp = 1µs 30 DCC<br>BF qi t= ms<br>irWw aPT TT eeeT ie)ER 25 PoP Nf\ fp<br>a fF COA Co on) &<br>eg<br>20<br>aTUM 1 2 LLee LMeee S& KR<br>15<br>8 PH EHH EEF © \<br>- en ee ee eee<br>aPT TTT 10 aw<br>ee eee 5 Py |] | tN<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V. temperature<br>Recommended use at V GE ≥ 15V) ( T vj ≤ 175°C)<br>16 45<br>15<br>14 —t+++++ 40 [11 lLyVit<br>PN tT |<br>13<br>ee 35 VGE=20V TAAL<br>12<br>_ Ne eee _ ry<br>18V<br>a 11 Nay Pa<br>30<br>15V<br>10<br>ef 9 | |Nd 25 12V \ /<br>8 10V<br>a a W/o<br>7 20 8V<br>2 Ne e AG vasan<br>6 7V<br>15<br>5<br>SB foTN 6.5V Wh<br>4<br>fe ee ee 10  .\\Y<br>3<br>2 ee ene<br>5<br>1<br>ee )Naeeeee<br>Sa a<br>0 0<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>


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45 45<br>Tvj = 25°C<br>Tvj = 150°C<br>40 40<br>35 / 35 /__/<br>VGE=20V<br>Zzee= 30 18V \ N / /eeZL —Zz 30 ee<br>a 15V a<br>EENNG PG eee<br>SL 25 12V N ) 25<br>: 20 10V RSW es 20<br>e INSSONY, || :82<br>A 15 8V SONY A 15 //<br>ne 7V 2008 eee ee<br>a 6.5V NNN Ze ee<br>10 10<br>y,<br>KN<br>5 5<br>fo NT 4<br>0 0eeASS22= 0 =e=a<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 7 9 11 13<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=150°C) ( V CE=50V)<br>2.6<br>IC = 4.3A<br>IC = 8.5A<br>IC = 17A 100<br>fe)Zz 7 aea aa aes ee ee ee<br>2.2<br>E an a a ee ee ee<br>aw a 7 Felt}fT ft ft ft<br>7A) 7<br>:ia<br>E 1.8 = )<br>= - Z<br>Ww _ 7 10<br>OPf eoLee] =§ aeeeee ee ee<br>O ee ae a a<br>uw! eto - a<br>a 1.4 ee eeeeee ee<br>td(off)<br>tf<br>td(on)<br>tr<br>1.0 1<br>0 25 50 75 100 125 150 175 4 6 8 10 12 14 16 18<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>I C I C<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>


Figure 7. Typical a function ( _V_ GE=15V) 

Figure 8. 

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(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15V, _R_ G=47 Ω , Dynamic test Figure E) 

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te 100 a a a<br>100 LTTO a a esa re ee<br>———————— ee ee ee ee<br>my —_——— Sea ee ee eee<br>a pasO |] eH my<br>eee<br>F=> | | | | oT|pet"] J] $F<br>10<br>Ee= 10 SS” SS E= Eaa a<br>n a a a <2) —<br>- a ee<br>pf +f + fF + + + ee ee<br>P E pf of of ft<br>td(off) td(off)<br>tf tf<br>td(on) td(on)<br>tr tr<br>1 1<br>10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE=400V,<br>V GE =15V, I C =8.5A,Dynamic test circuit in V GE=15V, I C =8.5A, R G=47 Ω ,Dynamic test<br>Figure E) circuit in Figure E)<br>6 0.8<br>typ. Eoff<br>Eon<br>>. 0.7 Ets /<br>uw 7<br>/<br>oO@‘ 5 ~ ~~ 7p)SE 0.6 7 ‘ é<br>a<br>0.5<br>fe) n y;<br>5 >Sg<br>ar 4 \ feLu 0.4 “ 7 Waa<br>- \ 2 “ 4<br>ow Ww “ y<br>WwW o) 7<br>=E Zz= 0.3 7 “4<br>D E vo a<br>ult 3 NE= 0.2 Eeeeaeea| je oman<br>.<br>:; \ ; Eaomcan<br>0.1<br>2 0.0<br>25 50 75 100 125 150 175 4 6 8 10 12 14 16 18<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>of junction temperature function of collector current<br>( I C=0.15mA) (inductive load, T vj =150°C, V CE=400V,=400V,<br>t t<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


(inductive load, _T_ vj =150°C, _V_ CE=400V,=400V, _V_ GE =15V, _R_ G=47 Ω ,Dynamic test circuit Figure E) 

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0.50 0.4<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>0.40<br>= =o = at<br>0.3<br>” a“ n oan<br>nm oa nm L<br>7) Ute 7) oa<br>op) Ped op) -<br>fe} a fe} a<br>—! 0.30 < > aa -<br>> ae > —_<br>na a na _<br>2 - s 0.2 ==<br>Zzy)e= 0.20 < : _ BEE:y)Zz= an<br>n 0.1<br>Se ce<br>0.10<br>0.00 0.0<br>10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15V,<br>V GE =15V, I C =8.5A, Dynamic test circuit in I C =8.5A, R G=47 ,Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


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0.5 16 Ld<br>Eoff — V CC = 130V<br>Eon L —- V CC =520V /<br>Ets “ 14 ee<br>YY<br>0.4<br>£ “ S 12 /<br>2) a 7 LUqu. /<br>icp) “ <x<br>oO> 0.3 aYo Kk_I 10<br>> | & J /<br>oO Yo4 Z a ind> {£_._ /<br>8<br>iO 0.2 4oa Z 7 Lain /<br>6<br>7 a“<br>4<br>.<br>0.1 z i”<br>2<br>0.0 0<br>200 250 300 350 400 450 500 0 5 10 15 20 25 30<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>


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Figure 15.<br>**----- End of picture text -----**<br>


Figure 16. Typical ( _I_ C=8.5A) 

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T vj =150°C, V GE=15V,<br>**----- End of picture text -----**<br>


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I C =8.5A, R G=47<br>Figure E)<br>**----- End of picture text -----**<br>


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## IKA10N65ET6 

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1000 5 Hs<br>[_ th ft ATT2 1 BUNalDN ee Zc<br>eS) Steer ee ee a eal<br>L ee Zz< AH—L e kes D = 0.50.2 | PO |_|<br>Mm) wo ST LTTTT TT<br>0.1<br>my 100 | | | | | 8 eT TT<br>2 es\\ BEor 0.1 BEUNZ6/eu(0 see 0.05<br>0.02<br><x 1 aw [7S 0.01<br>cP SSS SS) aS eae<br>O° 10 EE| aeTes| =3 0.01 FCTTCOMASELULATll single pulse ss ul [IM TTT<br>a 2 BU A 1)<br>sO Or FHHer Ro |<br>[e s es E~ Coon7 TTCootTn ThCo __ |<br>| Cies 7 CTT TTT |<br>Coes<br>I Cres eei ee ee ee chor,a i: 1 2 3 4 5 pIRycotter 6  Ca=fell —! 7 |<br>ri[K/W]: 0.04912 0.59182 0.70826 0.4711 0.95942 0.86219 0.06715<br>τ i[s]: 3.0E-5 3.3E-4 2.6E-3 0.02454 0.3516 2.227 15.12<br>ee |<br>1 0.001<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal impedance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>| | || || || | | 100 ee |<br>HEEFT a HtaHIE eeeTE ET m= 1M || || Tvj = 25°C, IF = 8.5A<br>St ee eeeanil Tvj = 150°C, IF = 8.5A<br>= a a aana 90 Sa<br>iii: Satin WA N —<br>SU 1 CML70IIT<br>D = 0.5<br>Zz DD | ILL| gc 80 e ee<br>a FARTS hm 0.2 CHT TTTT WI<br>=E eepl ie 0.1 | i<br>70<br>BUA 0.1 EASE Ty IEEE UML)<br>0.05<br>« aeeSO<br>xSs INST SS 0.02 ee ee> 60 Pf ff<br>ar aul wails e)<br>0.01<br>= 0.01 AIHHT TITS A TT T CTE TMT TM<br>Etre a TT<br>pa single pulse ep) 50<br>nt | | | Ww<br>Wwa eHal ona ee et ee rt ae<br>40<br>2 CIC te, re | # ——_]<br>0.001<br>ea FHHTHHIHHEH] HGF C.=4,/R, Co=te/R, pp| 30<br>i: 1 2 3 4 5 6 7 8<br>ri[K/W]: 3.4E-3 0.1602 1.569 1.215 0.551 0.963 0.8606 0.0673<br>| τ i[s]: 4.0E-6 3.0E-5 3.2E-4 2.3E-3 0.0236 0.35107 2.228 15.16<br>1E-4 20<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100 400 600 800 1000 1200<br>t p ,PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>C<br>c)th(j-<br>Z<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>


Figure 19. Diode function ( _D_ = _t_ p/T) 

Figure 20. 

( _V_ R=400V) 

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IKA10N65ET6 

**==> picture [476 x 303] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.60 | 12 |<br>Tvj = 25°C, IF = 8.5A Tvj = 25°C, IF = 8.5A<br>Tvj = 150°C, IF = 8.5A Tvj = 150°C, IF = 8.5A<br>11 = — Joi<br>7<br>_<br>0.50<br>am aa kK Z<br>Z|” _ ez 10 7 a=<br>< na 4<br>= 5 y a<br>Oo 0.40 oO J<br>9<br>ie ee |<br>Lu x 7<br>> > /<br>© Q /<br>uw 9 8 / Y,<br>0.30<br>a ow /<br>D) D<br>Ww ti 7 va<br>a | >i 4<br>0.20<br>6<br>0.10 5<br>400 600 800 1000 1200 400 600 800 1000 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery charge as a Figure 22. Typical reverse recovery current as a<br>Q rr I rr<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
( V R=400V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
( V R=400V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0 45<br>Tvj = 25°C, IF = 8.5A Tvj = 25°C<br>Tvj = 150°C, IF = 8.5A Tvj = 150°C<br>40<br>EO |) Eas<br>-100<br>/<br>35<br>a<br>-200 a x<br>3 _ 30<br>ia‘=(o} -300 orwa 25<br>©<br>x© ing 20 /<br>8 -400 <x=<br>g ©<br>15<br>-500<br>10<br>-600<br>5<br>7<br>-700 0<br>400 500 600 700 800 900 1000 1100 1200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>


Figure 23. 

Figure 24. 

( _V_ R=400V) 

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**----- Start of picture text -----**<br>
2.0<br>1.8<br>uw 1.6<br>ee ee ee<br>KkeS fo<br>I<br>a>So 1.4 fespospaape-TRHbt ==|<br>Sf<br>pp° 1.2 EEE Z|<br>pe<br>pote<br>1.0<br>IF = 4.25A<br>IF = 8.5A<br>IF =17A<br>P E<br>0.8<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>


Figure 25. 

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**==> picture [86 x 38] intentionally omitted <==**

## TRENCHSTOP™�IGBT6 

## **Package Drawing PG-TO220-3-FP** 

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## TRENCHSTOP™�IGBT6 

## **Testing Conditions** 

**==> picture [252 x 588] intentionally omitted <==**

**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>


Figure C. **Definition of diode switching characteristics** 

**==> picture [7 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

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## TRENCHSTOP™�IGBT6 

## **Revision�History** 

IKA10N65ET6 

## **Revision:�2017-11-30,�Rev.�2.2** 

## Previous Revision 

|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2017-09-11|Final Datasheet|
|2.2|2017-11-30|New Gfs Value at VCE=20V|



15 

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## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/IKA10N65ET6XKSA2/igbt-15-a-v-40-w-650-to-220-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ika10n65et6xksa2/igbt-650v-15a-175deg-c-40w/dp/3227591)
---

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