# IGBT, 11.7 A, 1.5 V, 30 W, 600 V, TO-220FP, 3 Pins
**URL**: https://novapart.co/products/IKA10N60TXKSA1/igbt-117-a-15-v-30-w-600-to-220fp-3-pins
**SKU**: IKA10N60TXKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.8250
**Stock**: 200+
**Lead Time**: 218 days (indicative)
## Description
DC Collector Current:11.7A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:30W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220FP; No. of Pins
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP |
| Power Dissipation | 30W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-220FP |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 11.7A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.5V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3155088/)
IKA10N60T
TRENCHSTOP™Series
## Low Loss DuoPack : IGBT in TRENCHSTOP™and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
## **Features:**
- Very low VCE(sat) 1.5V (typ.)
- Maximum Junction Temperature 175°C
- Short circuit withstand time 5s
- TRENCHSTOP™and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- Low EMI
- Very soft, fast recovery anti-parallel Emitter Controlled HE diode
- Qualified according to JEDEC[1] for target applications
- Pb-free lead plating; RoHS compliant
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**----- Start of picture text -----**
C
G
E
PG-TO220-3 (FullPak)
**----- End of picture text -----**
- Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
## **Applications**
- Washing Machine
- Air Condition
- Inverter and Variable Speed Drive
|**Type**|_V_CE|_I_C|_V_CE(sat_),Tj=25°C_|_T_j,max|Marking Code|Package|
|---|---|---|---|---|---|---|
|IKA10N60T|600V|10A|1.5V|175C|K10T60|PG-TO220-3 (FullPAK)|
## **Maximum Ratings**
|**Parameter**|**Symbol**
~~—~~
~~ee~~|**Value**
~~—~~
~~eee~~|**Unit**
~~—~~
~~eee~~|
|---|---|---|---|
|Collector-emitter voltage,_T_j≥ 25C|_V_C E
~~ee~~|600
~~eee~~|V
~~eee~~|
|DC collector current, limited by_T_jmax
_T_C= 25C
_T_C= 100C|_I_C
~~ee ~~
~~Pf~~|11.7
7.2
~~eee~~
~~Pf~~|A
~~eee~~
~~|~~
~~eee~~|
|Pulsed collector current,_t_plimited by_T_jmax|_I_C p u l s
~~—--—————~~|30
~~—--—————~~||
|Turn off safe operating area,_V_CE= 600V,_T_j= 175C,_t_p= 1µs|_-_
~~—--—————~~|30
~~—--—————~~||
|Diode forward current, limited by_T_jmax
_T_C= 25C
_T_C= 100C|_I_F
~~|~~|11.9
7.4
~~|~~||
|Diode pulsed current,_t_plimited by_T_jmax|_I_F p u l s
~~|~~
~~ee~~|30
~~|~~
~~eee~~||
|Gate-emitter voltage
~~—~~|_V_G E
~~ee~~
~~—~~|20
~~eee~~
|V
~~eee~~
|
|Short circuit withstand time2)
_V_GE= 15V,_V_CC400V,_T_j150C
~~—~~|_t_S C
~~ee ~~
~~—[|~~
~~ee~~|5
~~eee~~
~~[|~~
~~eee~~|s
~~eee~~
~~[|~~
~~eee~~|
|Power dissipation,_T_C= 25C
~~—~~|_P_t o t
~~—~~
~~ee~~|30
~~eee~~|W
~~eee~~|
|Operating junction temperature|_T_j
~~ee ~~
~~|~~|-40...+175
~~eee~~
~~|~~|C
~~eee~~
~~|~~|
|Storage temperature|_T_s t g
~~|~~
~~ee~~|-55...+150
~~|~~
~~ee~~||
|Isolation voltage|_V_i s o l
~~ee~~|2500
~~ee~~|Vr ms|
- 1 J-STD-020 and JESD-022
- 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
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## TRENCHSTOP™Series
## **Thermal Resistance**
|**Thermal Resistance**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Max. Value**|**Unit**|
|**Characteristic**|||||
|IGBT thermal resistance,
junction – case|_R_t hJC||5|K/W|
|Diode thermal resistance,
junction – case|_R_t hJC D||5.8||
|Thermal resistance,
junction – ambient|_R_t hJA||80||
## **Electrical Characteristic,** at _T_ j = 25 C, unless otherwise specified
|**Electrical Characteristic,**at_T_j= 25|C, unless ot|herwise specified|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Static Characteristic**|||||||
|Collector-emitter breakdown voltage|_V_( BR )C ES|_V_G E=0V, _I_C=0.2mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_C E( sat )|_V_G E = 15V, _I_C=10A
_T_j=25C
_T_j=175C|-
-|1.5
1.8|2.05||
|Diode forward voltage|_V_F|_V_G E=0V, _I_F=10A
_T_j=25C
_T_j=175C|-
-|1.6
1.6|2.05
-||
|Gate-emitter threshold voltage|_V_G E( t h)|_I_C=0.3mA,_V_C E=_V_G E|4.1|4.6|5.7||
|Zero gate voltage collector current|_I_CE S|_V_C E=600V,
_V_G E=0V
_T_j=25C
_T_j=175C|-
-|-
-|40
1000|µA|
|Gate-emitter leakage current|_I_GE S|_V_C E=0V,_V_G E=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_C E=20V, _I_C=15A|-|6|-|S|
|Integratedgate resistor|_RG int_|||none||Ω|
|**Dynamic Characteristic**|||||||
|Input capacitance|_C_i ss|_V_C E=25V,
_V_G E=0V,
_f_=1MHz|-|551|-|pF|
|Output capacitance|_C_os s||-|40|-||
|Reverse transfer capacitance|_C_rs s||-|17|-||
|Gate charge|_Q_Gat e|_V_C C=480V, _I_C=10A
_V_G E=15V|-|62|-|nC|
|Internal emitter inductance
measured 5mm(0.197 in.)from case|_L_E||-|7|-|nH|
|Short circuit collector current1)|_I_C( SC )|_V_G E=15V,_t_SC5s
_V_C C = 400V,
_T_j =
25C|-|100|-|A|
> 1) Allowed number of short circuits: <1000; time between short circuits: >1s.
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TRENCHSTOP™Series
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## **Switching Characteristic, Inductive Load,** at _T_ j=25 C
|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBT Characteristic**|||||||
|Turn-on delaytime|_t_d( o n)|_T_j=25C,
_V_C C=400V,_I_C=10A,
_V_G E=0/15V,_r_G=23,
_L_=60nH,_C_=40pF
_L_, _C_from Fig. E
Energy losses include
“tail” and diode reverse
recovery.|-|12|-|ns|
|Rise time|_t_r||-|8|-||
|Turn-off delaytime|_t_d( of f)||-|215|-||
|Fall time|_t_f||-|38|-||
|Turn-on energy|_E_o n||-|0.16|-|mJ|
|Turn-off energy|_E_o ff||-|0.27|-||
|Total switchingenergy|_E_t s||-|0.43|-||
|**Anti-Parallel Diode Characteristic**|||||||
|Diode reverse recoverytime|_t_rr|_T_j=25C,
_V_R=400V, _I_F=10A,
_di_F_/dt_=880A/s|-|115|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.38|-|µC|
|Diodepeak reverse recoverycurrent|_I_rr m||-|10|-|A|
|Diode peak rate of fall of reverse
recoverycurrent during_t_b|_di_rr_/dt_||-|680|-|A/s|
## **Switching Characteristic, Inductive Load,** at _T_ j=175 C
|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBT Characteristic**|||||||
|Turn-on delaytime|_t_d( o n)|_T_j=25C,
_V_C C=400V,_I_C=10A,
_V_G E=0/15V,_r_G=23,
_L_=60nH,_C_=40pF
_L_, _C_from Fig. E
Energy losses include
“tail” and diode reverse
recovery.|-|10|-|ns|
|Rise time|_t_r||-|11|-||
|Turn-off delaytime|_t_d( of f)||-|233|-||
|Fall time|_t_f||-|63|-||
|Turn-on energy|_E_o n||-|0.26|-|mJ|
|Turn-off energy|_E_o ff||-|0.35|-||
|Total switchingenergy|_E_t s||-|0.61|-||
|**Anti-Parallel Diode Characteristic**|||||||
|Diode reverse recoverytime|_t_rr|_T_j=175C
_V_R=400V, _I_F=10A,
_di_F_/dt_=880A/s|-|200|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.92|-|µC|
|Diodepeak reverse recoverycurrent|_I_rr m||-|13|-|A|
|Diode peak rate of fall of reverse
recovery current during_t_b|_di_rr_/dt_||-|390|-|A/s|
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## TRENCHSTOP™Series
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t p =1µs
10A
20µs
50µs
1A
500µs
5ms
100ms
0,1A
DC
1V 10V 100V 1000V
COLLECTOR CURRENT
I C,
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T C=80°C T C=110°C
30A
25A
20A
15A
10A I c
5A
I c
0A
10Hz 100Hz 1kHz 10kHz 100kHz
COLLECTOR CURRENT
I C,
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f , SWITCHING FREQUENCY
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_V_ CE, COLLECTOR-EMITTER VOLTAGE
## **Figure 1. Collector current as a function of switching frequency**
**Figure 2. Safe operating area** ( _D =_ 0, _T_ C = 25C, _T_ j 175C; _V_ GE=0/15V)
( _T_ j 175C, _D =_ 0.5, _V_ CE = 400V, _V_ GE = 0/15V, _r_ G = 23)
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30W
25W
20W
15W
10W
5W
0W
25°C 50°C 75°C 100°C 125°C 150°C
POWER DISSIPATION
tot,
P
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10A
8A
6A
4A
2A
0A
25°C 75°C 125°C
COLLECTOR CURRENT
I C,
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_T_ C, CASE TEMPERATURE
**Figure 3. Power dissipation as a function of case temperature** ( _T_ j 175C)
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T C, CASE TEMPERATURE
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**Figure 4. Collector current as a function of case temperature** ( _V_ GE 15V, _T_ j 175C)
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## TRENCHSTOP™Series
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30A 30A
25A V GE =20V 25A V GE =20V
15V 15V
20A 20A
12V 12V
10V 10V
15A 15A
8V 8V
6V 6V
10A 10A
5A 5A
0A 0A
0V 1V 2V 3V 4V 0V 1V 2V 3V 4V 5V
V CE, COLLECTOR-EMITTER VOLTAGE V CE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic Figure 6. Typical output characteristic
( T j = 25°C) ( T j = 175°C)
COLLECTOR CURRENT COLLECTOR CURRENT
I C, I C,
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3,0V
25A IC =20A
2,5V
20A
2,0V I C =10A
15A
1,5V
10A
1,0V I C =5A
5A T J = 175 °C
0,5V
25°C
0A 0,0V
0V 2V 4V 6V 8V 10V -50°C 0°C 50°C 100°C 150°C
V GE, GATE-EMITTER VOLTAGE T J, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter
(VCE=20V) saturation voltage as a function of
junction temperature
( V GE = 15V)
EMITT SATURATION VOLTAGE
-
COLLECTOR CURRENT
I C,
COLLECTOR
CE(sat),
V
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## TRENCHSTOP™Series
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t
d(off)
100ns
t f
t
d(on)
10ns
t r
1ns
0A 5A 10A 15A 20A
SWITCHING TIMES
t,
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IC , COLLECTOR CURRENT
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**Figure 9. Typical switching times as a function of collector current** (inductive load, _T_ J=175°C, _V_ CE = 400V, VGE = 0/15V, _r_ G = 23Ω, Dynamic test circuit in Figure E)
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t
d(off)
100ns
t f
t
d(on)
10ns
t r
1ns
SWITCHING TIMES
t,
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R G, GATE RESISTOR
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**Figure 10. Typical switching times as a function of gate resistor** (inductive load, _T_ J = 175°C, _V_ CE= 400V, VGE = 0/15V, _I_ C = 10A, Dynamic test circuit in Figure E)
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t d(off)
100ns
t f
t
d(on)
10ns
t r
1ns
25°C 50°C 75°C 100°C 125°C 150°C
SWITCHING TIMES
t,
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T J, JUNCTION TEMPERATURE
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**Figure 11. Typical switching times as a function of junction temperature** (inductive load, _V_ CE = 400V, VGE = 0/15V, _I_ C = 10A, _r_ G=23Ω, Dynamic test circuit in Figure E)
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7V
6V
max.
5V typ.
4V
min.
3V
2V
1V
0V
-50°C 0°C 50°C 100°C 150°C
EMITT TRSHOLD VOLTAGE
-
GATEGE(th ) ,
V
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T J, JUNCTION TEMPERATURE
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**Figure 12. Gate-emitter threshold voltage as a function of junction temperature** ( _I_ C = 0.3mA)
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## TRENCHSTOP™Series
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*) E on and E ts include losses
due to diode recovery E ts*
0,8 mJ
0,6 mJ E
off
0,4 mJ E on *
0,2 mJ
0,0 mJ
SWITCHING ENERGY LOSSES
E ,
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*) E on and E tsinclude losses
1,0mJ due to diode recovery E ts*
0,8mJ
E off
0,6mJ
0,4mJ
E on*
0,2mJ
0,0mJ
0A 5A 10A 15A
IC , COLLECTOR CURRENT
SWITCHING ENERGY LOSSES
E ,
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R G, GATE RESISTOR
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- **Figure 13. Typical switching energy losses as a function of collector current** (inductive load, _T_ J = 175°C, _V_ CE = 400V, VGE = 0/15V, _r_ G = 23Ω, Dynamic test circuit in Figure E)
**Figure 14. Typical switching energy losses as a function of gate resistor** (inductive load, _T_ J = 175°C, _V_ CE = 400V, VGE = 0/15V, _I_ C = 10A, Dynamic test circuit in Figure E)
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*) E on and E ts include losses
0,6mJ due to diode recovery
0,5mJ E ts*
0,4mJ
0,3mJ E off
0,2mJ
0,1mJ E on*
0,0mJ
50°C 100°C 150°C
T J, JUNCTION TEMPERATURE
SWITCHING ENERGY LOSSES
E ,
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## **Figure 15. Typical switching energy losses as a function of junction temperature**
- (inductive load, _V_ CE = 400V, VGE = 0/15V, _I_ C = 10A, _r_ G = 23Ω, Dynamic test circuit in Figure E)
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*) E on and E ts include losses
due to diode recovery
0,8mJ
0,6mJ
E ts*
0,4mJ
E off
0,2mJ
E on*
0,0mJ
300V 350V 400V 450V 500V 550V
SWITCHING ENERGY LOSSES
E ,
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VCE , COLLECTOR-EMITTER VOLTAGE
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**Figure 16. Typical switching energy losses as a function of collector emitter voltage**
- (inductive load, _T_ J = 175°C, _V_ GE = 0/15V, _I_ C = 10A, _r_ G = 23Ω, Dynamic test circuit in Figure E)
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## TRENCHSTOP™Series
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15V
120V
480V
10V
5V
0V
0nC 20nC 40nC 60nC
Q GE, GATE CHARGE
EMITTER VOLTAGE
-
GATE
GE,
V
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**Figure 17. Typical gate charge** ( _I_ C=10 A)
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1nF
C iss
100pF
C oss
C rss
10pF
0V 10V 20V
CAPACITANCE
c,
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**----- Start of picture text -----**
V CE, COLLECTOR-EMITTER VOLTAGE
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**Figure 18. Typical capacitance as a function of collector-emitter voltage** ( _V_ GE=0V, _f_ = 1 MHz)
**==> picture [466 x 216] intentionally omitted <==**
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12µs
150A
10µs
125A
8µs
100A
6µs
75A
4µs
50A
2µs
25A
0µs
0A 10V 11V 12V 13V 14V
12V 14V 16V 18V
COLLECTOR CURRENT
SHORT CIRCUIT WITHSTAND TIME
, short circuit ,
t SC
I C(sc)
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_V_ GE, GATE-EMITTETR VOLTAGE **Figure 19. Typical short circuit collector current as a function of gateemitter voltage** ( _V_ CE 400V, _T_ j 150C)
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**----- Start of picture text -----**
V GE, GATE-EMITETR VOLTAGE
**----- End of picture text -----**
**Figure 20. Short circuit withstand time as a function of gate-emitter voltage** ( _V_ CE=400V _,_ start at _T_ J _=_ 25°C, _T_ Jmax<150°C)
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## TRENCHSTOP™Series
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**----- Start of picture text -----**
D =0.5
0.2
0 0K/W
0.1
R , ( K / W ) , ( s )
1.596 4.622 6
1.985 1.288
0.05 0.5623 5.066*10 [-2]
0.3324 4.152*10 [-3]
0 -1K/W 0.02 0.3531 6.059*10 [-4]
0.1730 7.863*10 [-5]
0.01 R 1 R 2
single pulse
C 1 =1 / R 1 C 2 =2 / R 2
0 -2K/W
10µs 100µs 1ms 10ms100ms 1s 10s
MPEDANCE
I
TRANSIENT THERMAL
thJC,
Z
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_t_ P, PULSE WIDTH
**Figure 21. IGBT transient thermal impedance** ( _D = t_ p / _T_ )
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**----- Start of picture text -----**
D =0.5
0.2
10 0K/W R , ( K / W ) , ( s )
0.1 1.418 5.068 6
2.125 1.416
0.5890 6.455*10 [-2]
0.5424 5.732*10 [-3]
0.6311 1.019*10 [-3]
0.05 0.5061 1.499*10 [-4]
10 -1K/W 0.02 R 1 R 2
0.01
single pulse C 1 = 1 / R 1 C 2 = 2 / R 2
10 -2K/W
10µs 100µs 1ms 10ms100ms 1s 10s
TRANSIENT THERMAL IMPEDANCE
thJC,
Z
**----- End of picture text -----**
## _t_ P, PULSE WIDTH
**Figure 22. Diode transient thermal impedance as a function of pulse width** ( _D_ = _t_ P/ _T_ )
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300ns
250ns
T =175°C
200ns J
150ns
100ns
T =25°C
J
50ns
0ns
200A/µs 400A/µs 600A/µs 800A/µs
di F /dt , DIODE CURRENT SLOPE
REVERSE RECOVERY TIME
t rr,
**----- End of picture text -----**
**Figure 23. Typical reverse recovery time as a function of diode current slope** ( _V_ R=400V, _I_ F=10A, Dynamic test circuit in Figure E)
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**----- Start of picture text -----**
0,8µC T =175°C
J
0,7µC
0,6µC
0,5µC
0,4µC
T =25°C
0,3µC J
0,2µC
0,1µC
0,0µC
200A/µs 400A/µs 600A/µs 800A/µs
REVERSE RECOVERY CHARGE
rr,
Q
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di F /dt , DIODE CURRENT SLOPE
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## **Figure 24. Typical reverse recovery charge as a function of diode current slope**
( _V_ R = 400V, _I_ F = 10A, Dynamic test circuit in Figure E)
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**==> picture [145 x 64] intentionally omitted <==**
## TRENCHSTOP™Series
**==> picture [235 x 219] intentionally omitted <==**
**----- Start of picture text -----**
14A T =175°C
J
12A
10A
T =25°C
8A J
6A
4A
2A
0A
200A/µs 400A/µs 600A/µs 800A/µs
REVERSE RECOVERY CURRENT
I rr,
**----- End of picture text -----**
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**----- Start of picture text -----**
di F /dt , DIODE CURRENT SLOPE
**----- End of picture text -----**
## **Figure 25. Typical reverse recovery current as a function of diode current slope**
- ( _V_ R = 400V, _I_ F = 10A, Dynamic test circuit in Figure E)
**==> picture [235 x 210] intentionally omitted <==**
**----- Start of picture text -----**
T =25°C
-700A/µs J
-600A/µs
-500A/µs
-400A/µs
T =175°C
J
-300A/µs
-200A/µs
-100A/µs
0A/µs
400A/µs 600A/µs 800A/µs
DIODE PEAK RATE OF FALL
/dt ,
rr
di OF REVERSE RECOVERY CURRENT
**----- End of picture text -----**
## _di_ F _/dt_ , DIODE CURRENT SLOPE
**Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope** ( _V_ R=400V, _I_ F=10A, Dynamic test circuit in Figure E)
**==> picture [234 x 240] intentionally omitted <==**
**----- Start of picture text -----**
30A
T J =25°C
175°C
20A
10A
0A
0V 1V 2V
V F, FORWARD VOLTAGE
FORWARD CURRENT
I F,
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**Figure 27. Typical diode forward current as a function of forward voltage**
**==> picture [231 x 214] intentionally omitted <==**
**----- Start of picture text -----**
2,0V
IF =20A
1,5V 10A
5A
1,0V
0,5V
0,0V
-50°C 0°C 50°C 100°C 150°C
FORWARD VOLTAGE
F,
V
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T J, JUNCTION TEMPERATURE
**----- End of picture text -----**
**Figure 28. Typical diode forward voltage as a function of junction temperature**
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TRENCHSTOP™Series
## PG-TO220-3 (FullPAK) A
**Please refer to mounting instructions**
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## TRENCHSTOP™Series
**Figure A. Definition of switching times**
**==> picture [189 x 303] intentionally omitted <==**
**----- Start of picture text -----**
i,v
di F /dt t r r =t S + t F
Q r r =Q S + Q F
t
I F / -——_ t S r r t F
I Q S Q F 10% I r r m t
r r m 90% I di r r /dt V R
r r m
Figure C. Definition of diodes
switching characteristics
1 2 n
r1 r 2 r n
Tj (t)
THO
p(t) r1 r 2 r n
.
©
TC
**----- End of picture text -----**
**Figure D. Thermal equivalent circuit**
**Figure B. Definition of switching losses**
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TRENCHSTOP™Series
**==> picture [145 x 64] intentionally omitted <==**
**Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved.**
## **Legal Disclaimer**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
## **Information**
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( **www.infineon.com** ) **.**
## **Warnings**
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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## Links
- [View this product on Novapart](https://novapart.co/products/IKA10N60TXKSA1/igbt-117-a-15-v-30-w-600-to-220fp-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ika10n60txksa1/igbt-600v-11-7a-to-220fp-3/dp/3155088)
---
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