# IGBT, 8 A, 1.6 V, 31.2 W, 650 V, TO-220, 3 Pins

![Product image](https://novapart.co/image/farnell:2363281/)

**URL**: https://novapart.co/products/IKA08N65F5XKSA1/igbt-8-a-16-v-312-w-650-to-220-3-pins
**SKU**: IKA08N65F5XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.6160
**Stock**: 10+
**Lead Time**: 141 days (indicative)

## Description

DC Collector Current:8A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:31.2W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No. of Pins:3Pins; O

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 |
| Power Dissipation | 31.2W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-220 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 8A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2363281/)

## IGBT 

High speed 5 FAST IGBT in TRENCHSTOP _ TM 5 technology copacked with RAPID 1 

## IKA08N65F5 

IKA08N65F5 

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**----- Start of picture text -----**<br>
High speed 5 FAST IGBT in TRENCHSTOP_ TM 5 technology copacked with<br>RAPID 1 fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed F5 technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ 650V breakdown voltage<br>G<br>«Low Q G E<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant »<br>*« Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>Applications: a.9"/<br>* Solar converters /<br>¢ Uninterruptible power supplies<br>* Welding converters<br>* Mid to high range switching frequency converters<br>G<br>C<br>E<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKA08N65F5|650V|8A|1.6V|175°C|K08EEF5|PG-TO220-3 FP|



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## High�speed�switching�series�fifth�generation 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 

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## High�speed�switching�series�fifth�generation 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emitter voltage|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||10.8<br>6.8|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||24.0|A|
|Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||24.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||12.3<br>7.3|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||24.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||31.2<br>15.6|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|



## **Thermal�Resistance** 

|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||4.80|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)|||5.60|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||65|K/W|



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## High�speed�switching�series�fifth�generation 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=8.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.80<br>1.90|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=9.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.08mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>4000.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=8.0A|-|17.0|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|500|-|pF|
|Output capacitance|_C_oes||-|16|-||
|Reverse transfer capacitance|_C_res||-|3|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=8.0A,<br>_V_GE=15V|-|22.0|-|nC|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=4.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=48.0Ω,_R_G(off)=48.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|10|-|ns|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|116|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.07|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.09|-|mJ|



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## High�speed�switching�series�fifth�generation 

|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=48.0Ω,_R_G(off)=48.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|9|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|3|-|ns|
|Turn-off delaytime|_t_d(off)||-|129|-|ns|
|Fall time|_t_f||-|35|-|ns|
|Turn-on energy|_E_on||-|0.04|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.06|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=4.0A,<br>_di_F_/dt_=800A/µs|-|41|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.14|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|6.6|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-160|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=800A/µs|-|27|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.10|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|6.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-300|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=4.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=48.0Ω,_R_G(off)=48.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|9|-|ns|
|Rise time|_t_r||-|6|-|ns|
|Turn-off delaytime|_t_d(off)||-|145|-|ns|
|Fall time|_t_f||-|18|-|ns|
|Turn-on energy|_E_on||-|0.10|-|mJ|
|Turn-off energy|_E_off||-|0.03|-|mJ|
|Total switchingenergy|_E_ts||-|0.13|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=48.0Ω,_R_G(off)=48.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|9|-|ns|
|Rise time|_t_r||-|4|-|ns|
|Turn-off delaytime|_t_d(off)||-|165|-|ns|
|Fall time|_t_f||-|25|-|ns|
|Turn-on energy|_E_on||-|0.06|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.08|-|mJ|



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High�speed�switching�series�fifth�generation 

**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=4.0A,<br>_di_F_/dt_=800A/µs|-|56|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.27|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-134|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=800A/µs|-|42|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.19|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.4|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-240|-|A/µs|



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7 

## ~~High speed switching series fifth generation~~ IKA08N65F5 

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**----- Start of picture text -----**<br>
35<br>LAN OTT<br>a CU TESiiiil 30 PE tt dl<br>10 INS | \ NUK BI<br>xE PNpf | ENT AA NTNRENTSNT 25 \<br>SPUN<br>2 tp=1µs NC 2 20 \<br>3 || HALLS PLU E \<br>| 10µs Saw a<br>50µs 15<br>Bf 1 DPTANI] 8<br>4 — 100µs Seat eT OS<br>Q= Peree 200µs a ec ro)NR 10 aN<br>) oT _ \<br>ec<br>a 500µs |<br>ee et el<br>DC 5<br>pSPATNI HHTEa EE<br>0.1 0<br>EE UN<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V. temperature<br>Recommended use at V GE ≥ 7.5V) ( T vj ≤ 175°C)<br>12 24<br>11<br>21 VGE=20V<br>10<br>18V<br>9 18<br>~t Np 12V aT 7<br>e Nit, Ap<br>8 10V<br>Zz KR Eee<br>15<br>oe2 7 f—NeeoeZz 8V eee,[| 7<br>7V<br>a 6 SL 12 ONENW/<br>6V<br>O 5 O<br>ep fF EN BY 9 5V I UT<br>a a SZ<br>gE<br>4<br>NanPN ane<br>PN 3 : 6 \W//<br>2<br>eee omen<br>3<br>1<br>a ieFi ASan<br>0 0<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>


8 

High speed switching series fifth generation IKA08N65F5 

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**----- Start of picture text -----**<br>
24 24<br>Tj=25°C<br>Tj=150°C<br>21 VGE=20V 21<br>18V<br>18 18<br>x 12V 7TY).: x L g<br>4<br>: 10V<br>in 15 ——Sff / Z| it 15 o|<br>8V<br>8 12 7V TL | 8 12<br>6V<br>nyi 9 5V STKeeei 9<br>3 NOW 3<br>© NX ©<br>6 6<br>/<br>foot Liev<br>3 3<br>; |<br>| LN<br>0 eee ee ee ee 0 _-<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4 5 6 7 8 9<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>


Figure 5. Typical ( _T_ vj=150°C) 

Figure 6. Typical ( _V_ CE=20V) 

**==> picture [471 x 312] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.00<br>IC=2A<br>IC=4A<br>IC=8A<br>Zz: 1.75 Eee . 100 Poe |<br>ce)Ee L-- a “7 1H ttd(off)f aaoo L<br>5oe= eeOD I td(on) a ee ee ee<br>tr<br>sf<br>1.50<br>a i Da eeee<br>Beye<br>W _ L ee<br>ees 1.25 e 10 ee ee<br>fs 2 — ————<br>in a aeee<br>4 ——— — - a Pea eeee<br>1.00<br>SO SRE<br>0.75 1<br>0 25 50 75 100 125 150 175 0 3 6 9 12 15 18 21 24<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V) (inductive load, T vj =150°C, V CE=400V,=400V,<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>


(inductive load, _T_ vj =150°C, _V_ CE=400V,=400V, _V_ GE =15/0V, _r_ G=48 Ω , Dynamic test Figure E) 

9 

~~High speed switching series fifth generation~~ IKA08N65F5 

**==> picture [517 x 615] intentionally omitted <==**

**----- Start of picture text -----**<br>
td(off)<br>tf<br>td(on)<br>tr<br>100 ET 100 |}<br>a ae ee ee ee ee ee H td(off) a ee ee ee<br>tf<br>ry a ee ee eee | td(on) a ee ee ee eee<br>tr<br>= e a eeyee = I aee ee ee ee<br>i | of | UT i Da ee ee<br>es {| ) | | | ye Le<br>oO oO<br>Zz nn ee al Zz<br>i 10 ]J$}—_$_}—_ = f$ —__}—_—~_ i 10 a se<br>>= a es ee ee ee eet ee > a s s ee<br>2) pewee eToe SS2) a are ee eee<br>- La ae - a es<br>a ee ee ee a eeee<br>a ee ee ee ee ee ee ee ee<br>1 1<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =4A,Dynamic test circuit in I C =4A, r G=48 ,Dynamic test circuit in Figure<br>Figure E) E)<br>5.5 0.8<br>typ. Eoff<br>min. Eon<br>-| 5.0 F max. l 0.7 Ets<br>Ww SA | FFE y<br>g<br>F 4.5<br>0.6<br>ee yA & 7<br>4.0<br>Q e e /<br>3 h~ _wa sw <_— . oa 0.5 7 y 4 7<br>o 3.5 as SS > / y,<br>Ww . N O / L<br>x~|\ 0.4<br>-<br>ow 3.0 “SN m™ \\ imZ 7 7<br>- NO 0.3 7 7<br>= N = ‘<br>= 2.5 ~ N O7 /\y 7<br>Bf . \ = 0.2 /\y<br>¢ 2.0 NUN 7 é oa<br>:<br>\ 0.1 Oe oT<br>1.5 PP ey) eeTt<br>1.0 0.0<br>0 25 50 75 100 125 150 175 0 3 6 9 12 15 18 21 24<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t t<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 11. Gate-emitter of junction ( _I_ C=0.08mA) 

Figure 12. 

(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=48 Ω ,Dynamic test Figure E) 

10 

IKA08N65F5 

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**----- Start of picture text -----**<br>
0.200 0.200<br>Eoff Eoff<br>Eon Eon<br>0.175 Ets 0.175 Ets<br>oy oy<br>0.150 0.150<br>uw eo Ww -<br>7) a7 7) Les<br>o a 7) -<br>e) 0.125 = e) 0.125 ea<br>pa wea . a) “7<br>. —<br>a _—— w aa _ —_—<br>0.100 0.100<br>ii aa oi a tT<br>oO — oO _—<br>Zz 0.075 < Zz 0.075<br>OO<br>EE<br>== 0.050 0.050<br>nn<br>0.025 et Tt tt 0.025 a<br>0.000 0.000<br>elit ity } Ee]<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=15/0V,<br>V GE =15/0V, I C =4A, Dynamic test circuit in I C =4A, r G=48 ,Dynamic test circuit in Figure<br>Figure E) E)<br>0.200 16<br>130V<br>520V<br>PF) Eea<br>0.175 14<br>ey — Eoff “ / /<br>0.150 12<br>ie) Eon oe wi<br>Ets<br>oD a © /<br>8> 0.125 a a“ a FE_Oo 10 / /<br>oO a 2 > /<br>xa 0.100 a “ - oO Am 2 fagimE 8 /<br>) a Z = /<br>Zz 0.075 Le uy 6 an<br>5 7<br>E<br>< [-]<br>= 0.050 - ) 4 |<br>0.025 2<br>0.000 0<br>200 250 300 350 400 450 500 0.0 5.0 10.0 15.0 20.0 25.0<br>V CE COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>E E<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>


Figure 15. 

Figure 16. Typical ( _I_ C=8A) 

_T_ vj =150°C, _V_ GE=15/0V, 

_I_ C =4A, _r_ G=48 E) 

11 

~~High speed switching series fifth generation~~ IKA08N65F5 

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1000 (S| A | |<br>Ciss<br>\ EO — PUTIN ETT TTI TTT TTITee<br>N C Cosrss s =———————— a = a ZiaLeeiaT|<br>poPe ee Tl<br>dS Bape: cota D=0.5<br>a = 100 ee a fcena 1 HHLeal2ZFeeeZo HEctHEE 0.20.10.05<br>re ee a wee cil 7 Al 0.02 A<br>Zz< eea 4 ratePE UT ecect et LI |<br>0.01<br>5 SS ee es a0)<br>ns z | ao single pulse Mh<br>: im EAT 0.1<br>“. 10 Fo =e_ 2 CEYl ae aN|| a a<br>JS}agaaSS ee—__}___}_______)_a a ee=4 4 GPAY T I TCTUT TTI IT ETE TTT lll|<br>es ee eeee ee ee PE TI EUANTT TE I MN TTL T ) TTAis TOcontaireTTl l<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.5538076 0.8276154 0.4749528 0.4651059 1.652781 0.8257374<br>τ i[s]: 1.7E-4 1.1E-3 8.6E-3 0.0926713 1.371172 7.214481<br>1 0.01<br>0 5 10 15 20 25 30 1E-5 1E-4 0.001 0.01 0.1 1 10 100<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal resistance<br>collector-emitter voltage ( D = t p/T)<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>


( _V_ GE 

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**----- Start of picture text -----**<br>
70<br>CT er SS<br>COC eer CCT LTT TT Tj=25°C, IF = 4A<br>— = AU ee 65 Tj=150°C, IF = 4A<br>S HT Pi<br>: pe 2a IA<br>1 60<br>D=0.5<br>Ss)2 SSeniinsest 7 StiOlate Hie oe ~<br>0.2<br>< ERS St 55 ~<br>n aii) maitre ean 0.1 ~<br>a Ut Th = SK<br>0.05<br>50<br>0.02<br>PAE ;<br>0.1<br>2 ect 0.01 MLM & 45 PP Py yyRY<br>Wwa SnCO Corn CCT CT CTT single pulse | WwW4 40 PPLE> | tf]<br>F a WW —= —<br>b SUVA LCT CUT TE TTA UT 35 Py |) f PKL<br>3 A I ia<br>g 0.01 CANIM UM LIM EN Rr Re an a<br>= STR g TTT co Se IR, Co=telR. NI 30<br>IE i: 1 eee 2 3 e 4 ee 5 ee 6 25 FP} E] EL EL LL<br>ri[K/W]: 0.9520941 1.171948 0.5287944 0.4647577 1.671981 0.8104246<br>τ i[s]: 2.1E-4 1.1E-3 8.9E-3 0.09325149 1.367755 7.182978<br>0.001 20<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100 600 700 800 900 1000 1100 1200 1300 1400 1500 1600<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>


Figure 19. Diode function ( _D_ = _t_ p/T) 

Figure 20. Typical of diode ( _V_ R=400V) 

12 

IKA08N65F5 

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**----- Start of picture text -----**<br>
0.35 | 14 |<br>Tj=25°C, IF = 4A Tj=25°C, IF = 4A<br>e Tj=150°C, IF = 4A e 13 Tj=150°C, IF = 4A<br>e e eee ee<br>e 0.30 L I T TT 12<br>_ E 7<br>mm TT tty). LE TT<br>) _y—<br>aw — a 11 /<br>< —T7 —_ orw / [<br>O 3 \/<br>0.25 10<br>WwBt2QBfeeWi>e) 9 EeLe<br>0.20 8<br>orimWwWBBYi 7 Leea = ji L |<br>0.15 6<br>2ot titi ttt ttt yei fire| ttt<br>5<br>rrr rriT yy)x o-reTT<br>0.10 4<br>600 700 800 900 1000 1100 1200 1300 1400 1500 1600 600 700 800 900 1000 1100 1200 1300 1400 1500 1600<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery charge as a Figure 22. Typical reverse recovery current as a<br>function of diode current slope function of diode current slope<br>( V R=400V) ( V R=400V)<br>0 27<br>Tj=25°C, IF = 4A Tj=25°C<br>Tj=150°C, IF = 4A Tj=150°C<br>Ey 24<br>-50 | Ee<br>rya 21 i!<br>-100<br>18<br>6 > = x<br>-150<br>3 Sail | fp | pd Pa<br>a<br>5 SOS a 15<br>£ -200 SN<br>12<br>$ <<<br>E a :<br>-250<br>9<br>2 N re<br>-300<br>6<br>-350<br>3<br>-400 0<br>600 700 800 900 1000 1100 1200 1300 1400 1500 1600 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>Q rr I rr<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>


Figure 23. 

Figure 24. 

( _V_ R=400V) 

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2.0<br>IF=4,5A<br>IF=9A<br>IF=18A<br>p e<br>1.8 e<br>eeLu 1.6 e e<br>xt<br>Kkee<br>I<br>><br>aeQ 1.4 eee<br>m4<br>Se fe<br>=<br>° 1.2 = |<br>ee ee<br>pe<br>1.0<br>0.8<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>


Figure 25. 

14 

IKA08N65F5 

High�speed�switching�series�fifth�generation 

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## **Package Drawing PG-TO220-3-FP** 

15 

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IKA08N65F5 

High�speed�switching�series�fifth�generation 

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## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>


Figure C. **Definition of diode switching characteristics** 

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**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

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IKA08N65F5 

## IKA08N65F5 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2012-11-09|Preliminarydatasheet|
|1.2|2013-12-17|New MarkingPattern|
|2.1|2015-05-05|Final data sheet|



## **Information** 

## **Warnings** 

endangered. 

17 



## Links

- [View this product on Novapart](https://novapart.co/products/IKA08N65F5XKSA1/igbt-8-a-16-v-312-w-650-to-220-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ika08n65f5xksa1/igbt-650v-8a-to220-3/dp/2363281)
---

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