# IGBT, 11 A, 1.5 V, 33 W, 650 V, TO-220, 3 Pins

![Product image](https://novapart.co/image/farnell:2986347/)

**URL**: https://novapart.co/products/IKA08N65ET6XKSA1/igbt-11-a-15-v-33-w-650-to-220-3-pins
**SKU**: IKA08N65ET6XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.0900
**Stock**: 10+

## Description

DC Collector Current:11A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:33W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-220; No. of Pins:3Pin

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP IGBT6 |
| Power Dissipation | 33W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-220 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 11A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2986347/)

## IKA08N65ET6 

CE(sat) * Maximum junction temperature 175°C ¢ Short circuit withstand time 3us Trench and field-stop technology for 650V * very tight parameter distribution * high ruggedness, temperature stable behavior * low V CEsat and positive temperature coefficient * Low gate charge Q G ¢ Pb-free lead plating; ROHS compliant ¢ Very soft, fast recovery anti-parallel Rapid diode *« Complete product spectrum and PSpice Models: www.infineon.com/igbt 

## Drives 

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|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKA08N65ET6|650V|8A<br>1)|1.5V<br>2)|175°C|K08EET6|PG-TO220-3 FP|



1) Limited by maximum junction temperature. Applicable for TO-220 Standard package. 

- 2) Measured under conditions specified on page 4. 

Datasheet www.infineon.com 

2017-11-30 

IKA08N65ET6 

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## TRENCHSTOP™�IGBT6 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 

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## TRENCHSTOP™�IGBT6 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax1)<br>_T_c=25°C<br>_T_c=100°C|_I_C||11.0<br>7.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||25.0|A|
|Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||25.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax1)<br>_T_c=25°C<br>_T_c=100°C|_I_F||14.0<br>9.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||25.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤360V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||3|µs|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||33.0<br>17.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M2.5 screw, PG-TO220-3 FP<br>Maximum of mounting processes: 3|_M_||0.5|Nm|
|IsolationvoltageRMS,_f_=50/60Hz,_t_=1min|_V_isol||2500|V|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|4.52|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|5.40|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|



1) Limited by maximum junction temperature. Applicable for TO220 standard package. 

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## TRENCHSTOP™�IGBT6 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown<br>voltage1)|_V_(BR)CES|_V_GE=0V,_I_C=0.10mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=5.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.50<br>1.65<br>1.75|1.90<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=5.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.28<br>1.21<br>1.15|1.75<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.12mA,_V_CE=_V_GE|4.8|5.6|6.4|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>240|30<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=5.0A|-|5.5|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|480|-|pF|
|Output capacitance|_C_oes||-|29|-||
|Reverse transfer capacitance|_C_res||-|8|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=5.0A,<br>_V_GE=15V|-|17.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤360V,<br>_t_SC≤3µs<br>_T_vj=150°C|-|50|-|A|



1) Measured with filter network. 

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## TRENCHSTOP™�IGBT6 

## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=47.0Ω,_R_G(off)=47.0Ω,<br>_L_σ=30nH,_C_σ=150pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|12|-|ns|
|Turn-off delaytime|_t_d(off)||-|59|-|ns|
|Fall time|_t_f||-|53|-|ns|
|Turn-on energy|_E_on||-|0.11|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.15|-|mJ|



**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** 

|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=400A/µs|-|43|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.15|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|4.9|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-530|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=47.0Ω,_R_G(off)=47.0Ω,<br>_L_σ=30nH,_C_σ=150pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|12|-|ns|
|Turn-off delaytime|_t_d(off)||-|69|-|ns|
|Fall time|_t_f||-|78|-|ns|
|Turn-on energy|_E_on||-|0.14|-|mJ|
|Turn-off energy|_E_off||-|0.07|-|mJ|
|Total switchingenergy|_E_ts||-|0.21|-|mJ|



**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** 

|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=400A/µs|-|65|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.32|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-340|-|A/µs|



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**----- Start of picture text -----**<br>
P| =i] 3530 KP Pp tt<br>10 ee<br>eee<br>2 Sete 25 \<br>6 SHI E tp = 1µs e )<br>| POP i) \<br>20<br>: || : \<br>PLLA ETHIE LEE) 15 Py INT<br>1 LAMM<br>UM N<br>8 LHe 10<br>: HE Ht) \<br>PteT TTETT| 5 Py PP IN<br>CnC EN<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V. temperature<br>Recommended use at V GE ≥ 15V) ( T vj ≤ 175°C)<br>12 25<br>11<br>10<br>20<br>9<br>ON 18V 77M)<br>8<br>eFpKE,. fz 15 VGE=20V YI<br>7<br>ef oN | 15V Lf =<br>6<br>12V<br>Bf ATs We<br>5<br>2 10 10V At)<br>4 8V<br>a 7V I<br>3<br>5 6.5V<br>. 2 eee M<br>1<br>ae POT<br>0 0<br>ee ee JA N<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>


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25 // \/ 25 | | /<br>Tvj = 25°C<br>Tvj = 150°C<br>20 eatTILsy 20 a TT /<br>VGE=20V<br>18V cbal 7<br>15V<br>g 15 TH LY g 15 /<br>é WS |) 3<br>a)o 12V ee eee oa)<br>: 10V CTT // ts<br>8V<br>£5G 10 |OYay) | 8G 10<br>: tho || 6<br>_! 7V _!<br>4 N\/ 7 4<br>6.5V }<br>°s NOK{7 :s<br>5 NIK 5<br>L W<br>0 ——LoS| [| | Tt ty tt 0 —_-” V7,<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 6 7 8 9 10 11 12 13<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>


Figure 5. Typical ( _T_ vj=150°C) 

Figure 6. Typical ( _V_ CE=50V) 

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2.6<br>IC = 2.5A td(off)<br>IC = 5A tf<br>IC = 10A td(on)<br>tr<br>100<br>Y5 7 a a a es ee ee<br>Ee< 2.2 “7 < SSSa eeeee<br>& ae 7 a<br>E Le £ a<br>= 1.8 O<br>Lu _— rT<br>or a O 10<br>FE = = a<br>Oo _= a a Ce<br>ou —_—— _ a<br>4 a a es<br>1.4<br>9 ee<br>1.0 1<br>0 25 50 75 100 125 150 175 2 4 6 8 10<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>


Figure 7. 

Figure 8. 

( _V_ GE=15V) 

(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =15/0V, _r_ G=47 Ω , Dynamic test Figure E) 

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**----- Start of picture text -----**<br>
YL<br>td(off) td(off)<br>tf tf<br>td(on) td(on)<br>tr tr<br>Ep Ey<br>100<br>100<br>ry a a pe<br>& a ee eeee ee ee ee ee<br>a<br>F9 foeT)---T7 F<br>O ---7 ceeeereet O<br>i= 10 a ne eeae Ee= 10 aa esee es es<br>- es ee - es<br>a ee ee es<br>ee ae eeee<br>1 1<br>10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor<br>(inductiveinductive loadload, T vj =150°C,150°C V CE=400V, feaeiinductive oodload,oa V CE = TOOV , V GE =15V,15V I C=5A,<br>V GE =15/0V, I C =5A,Dynamic test circuit in r G=47 ,Dynamic test circuit in Figure E)<br>Figure E)<br>6 0.4<br>typ. Eoff<br>Eon<br>=w >. = E | ts 7 a<br>g Sy Y4<br>; 5 0.3<br>aa (op)2 7 a<br>2 g a ra<br>: 4 i 0.2 a “A<br>r 2 “oO 4<br>Lu a a<br>E<br>ui=r= / a<br>HW 3 Fe 0.1 ‘ a<br>| = 20 |__ +7 |<br>cl<br>2 0.0<br>25 50 75 100 125 150 175 2 3 4 5 6 7 8 9 10<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>of junction temperature function of collector current<br>( I C=0.12mA) (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=47 Ω ,Dynamic test circuit in<br>Figure E)<br>t t<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0.30 0.25<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>0.25<br>0.20<br>nm ae no ae<br>7)o 0.20 -_- nm7) --Le<br>fo)no { o _eo7 : 7<br>aa peas fo) 0.15 oT<br>25 “7L _ — aa2 = —_— _<br>w — w ae<br>WwW 0.15 WwW _—<br>z _ Zz _|-— —_—<br>Ww —_ Ww —_—<br>oOZz - — oOZz 0.10<br>OO 0.10<br>: : : | |e<br>0.05<br>0.05<br>0.00 0.00<br>10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>(inductinductive “load, gate T  resin vj =150°C, V CE=400V, (inductinductive “load,eae V CE = , alae V GE =15V, I C=5A,<br>V GE =15/0V, I C = 5A, Dynamic test circuit in r G=47 ,Dynamic test circuit in Figure E)<br>Figure E)<br>E E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0.30 16<br>Eoff V CC<br>Eon —- V CC  =520V /<br>Ets v 14<br>vy<br>0.25<br>> 7<br>12<br>a 7uw<br>0.20<br>2) an © /<br>O Y7 7 <— 10 /<br>> Y a ><br>ra Lo 4 o<br>nm 0.15 E 8 a<br>Gi y, Y -E }<br>g // 7 4 := i<br>= 7 Lu 6<br>r= 7 Za“ =<br>p 0.10 7 $<br>4<br>-7Z<br>0.05<br>an a<br>2<br>0.00 0<br>200 250 300 350 400 450 500 0 4 8 12 16 20<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical gate charge<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>


Figure 16. Typical ( _I_ C=5A) 

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**----- Start of picture text -----**<br>
T vj =150°C, V GE=15/0V,<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I C =5A, r G=47<br>E)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1000 a a a eS PT ET<br>Ss——— a a FATEH ST TT TUT FTEcaerHEE UM it<br>[fF S Semester LUT<br>ee SITTER 1 D = 0.5<br>0.2<br>ce 100 fp}aee e e| eee| ee|) <xWwa S a7e meecH 0.1 ooo<br>a; eea“ ffTAN-<br>0.05<br>gS<br>0.1<br><x a ee ee ee ee ee = ee ee eee ee 0.02 |<br>0.01<br>o 5 as 0<br>single pulse<br><- 10 aRSee ee 2FACESAVA IMM TTT PtCCee a eT<br>a<br>a<br>po eeee 2 0.01 eee 1]<br>p es esf = (aanYT TT seatTT eei tota Re—_-— |<br>| Cies . TT CT<br>Coes<br>| Cres i ee ee ee ne 0000 0 |<br>| { | [| | | SHEE i: 1 2 3 HL 4 C= 5 wR 6 Orth 7 |<br>ri[K/W]: 0.08308 1.02865 1.00041 0.51788 0.96008 0.86136 0.06715<br>τ i[s]: 3.0E-5 3.3E-4 2.4E-3 0.02396 0.3515 2.226 15.12<br>1 0.001<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal impedance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>90<br>CT Tvj = 25°C, IF = 5A<br>A TT TN tit steeerrm 1 UTI TTT Tvj = 150°C, IF = 5A<br>= 8 ea a<br>x ae a<br>1<br>epee 1 a 070ly, 0 A 75<br>D = 0.5<br>Zz RD a | cS \<br>a FARTS hm 0.2 CHT TTTT WI<br>=I mai ilx( 0.1 100 0 A -<br>0.1<br>60<br>4 MUD 0.05 IMM —& | | PSL tT<br>2Ss Sriaul wailsSet see Sete 0.02 Se et ee O Pf ff este |<br>0.01<br>fe 0.01 SA 1 0 45 ae<br>cm 0000 40 0) am —<br>single pulse<br>Ww ny | | || Ww oS<br>a eH rt a<br>Z 0.001 PAN nm Ry Rr, | # 30 PT Ty PRS<br>© VIII + } HH in t--|<br>p Tn ==<br>i: 1 2 3 4 5 6 7 8<br>ri[K/W]: 3.4E-3 0.1602 1.569 1.215 0.551 0.963 0.8606 0.0673<br>1E-4 er τ i[s]: 4.0E-6 3.0E-5 3.2E-4 2.3E-3 e 0.0236 0.35107 2.228 15.16 | ee 15 ee<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100 200 300 400 500 600 700 800 900<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>C<br>c)th(j-<br>Z<br>t rr<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>


Figure 19. Diode function ( _D_ = _t_ p/T) 

Figure 20. 

( _V_ R=400V) 

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**----- Start of picture text -----**<br>
0.40 es<br>Tvj = 25°C, IF = 5A<br>Tvj = 150°C, IF = 5A<br>0.35 | |<br>Lu —_——<br>fo) _4-—— _<br>7 0.30<br>3)<br>><br>or<br>Ww<br>5) 0.25<br>uw<br>owor“) 0.20<br>v<br>or<br>0.15<br>0.10<br>200 300 400 500 600 700 800 900<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>rr<br>Q<br>**----- End of picture text -----**<br>


Figure 21. 

( _V_ R=400V) 

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**----- Start of picture text -----**<br>
10 es<br>Tvj = 25°C, IF = 5A<br>Tvj = 150°C, IF = 5A<br>9<br>—+— =<br>8 a<br>7<br>/<br>7 iC<br>/<br>/<br>6 y ye<br>5 XO<br>4<br>3<br>200 300 400 500 600 700 800 900<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>**----- End of picture text -----**<br>


Figure 22. 

( _V_ R=400V) 

**==> picture [472 x 285] intentionally omitted <==**

**----- Start of picture text -----**<br>
-200 es 25<br>Tvj = 25°C, IF = 5A<br>Tvj = 150°C, IF = 5A Tvj = 25°C<br>Oe | Tvj = 150°C /<br>-300 | | /<br>/\/<br>— ~~ 20 7<br>n ™~<br>z ~~ -<br>~ ~S <x<br>5 -400 \ 5<br>15<br>ic td<br>‘=(o} wa<br>23<br>5& -500 \ a<br>g3 gS 10 y |<br>8 -600 [>~~ —| rafs)<br>5<br>-700<br>7<br>4<br>a<br>-800 0<br>200 300 400 500 600 700 800 900 0.5 1.0 1.5 2.0 2.5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>


Figure 23. 

Figure 24. 

( _V_ R=400V) 

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**----- Start of picture text -----**<br>
1.8<br>IF = 2.5A<br>IF = 5A<br>IF = 10A<br>i | ey<br>1.6<br>g p<br>Ww<br>KkBP 1.4<br>I<br>><br>Sp<br>Qee 1.2<br>a i<br>LL<br>ee<br>1.0<br>i eee<br>|po<br>|| [|] oo<br>0.8<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>


Figure 25. 

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## TRENCHSTOP™�IGBT6 

## **Package Drawing PG-TO220-3-FP** 

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**==> picture [86 x 38] intentionally omitted <==**

## TRENCHSTOP™�IGBT6 

## **Testing Conditions** 

**==> picture [252 x 588] intentionally omitted <==**

**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


**==> picture [153 x 99] intentionally omitted <==**

**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>


Figure C. **Definition of diode switching characteristics** 

**==> picture [7 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


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Figure D. 

**==> picture [7 x 4] intentionally omitted <==**

**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

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## TRENCHSTOP™�IGBT6 

## **Revision�History** 

IKA08N65ET6 

## **Revision:�2017-11-30,�Rev.�2.2** 

## Previous Revision 

|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2017-09-11|Final Datasheet|
|2.2|2017-11-30|New Gfs Value at VCE=20V|



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## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/IKA08N65ET6XKSA1/igbt-11-a-15-v-33-w-650-to-220-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ika08n65et6xksa1/igbt-650v-11a-33w-to-220/dp/2986347)
---

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