# IGBT, 10 A, 1.5 V, 28 W, 600 V, TO-220FP, 3 Pins

![Product image](https://novapart.co/image/farnell:3703615/)

**URL**: https://novapart.co/products/IKA06N60TXKSA1/igbt-10-a-15-v-28-w-600-to-220fp-3-pins
**SKU**: IKA06N60TXKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.6790
**Stock**: 500+
**Lead Time**: 218 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP |
| Power Dissipation | 28W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-220FP |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 10A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3703615/)

IKA06N60T 

TRENCHSTOP™ Series 

## Cinfineon 

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode 

@, e/ | (8) Go Green 

## **Features** 

- Very low  VCE(sat) 1.5V (typ.) 

- Maximum Junction Temperature 175°C 

- Short circuit withstand time 5s 

- TRENCHSTOP™ and Fieldstop technology for 600V applications offers : 

   - very tight parameter distribution 

   - high ruggedness, temperature stable behavior 

   - very high switching speed 

- Low EMI 

- Very soft, fast recovery anti-parallel Emitter Controlled HE diode 

- Qualified according to JEDEC[1] for target applications 

- Pb-free lead plating; RoHS compliant 

- Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ 

C G ag E PG-TO220-3 (FullPAK) 

## **Applications** 

- Washing Machine 

- Inverter and Variable Speed Drive 

|**Parameter**|**Symbol**<br>~~—}---——~~|**Value**<br>~~—}---——~~|**Unit**<br>~~—}---——~~|
|---|---|---|---|
|Collector-emitter voltage,_T_j≥ 25C|_V_C E<br>~~—}---——~~|600<br>~~—}---——~~|V<br>~~—}---——~~|
|DC collector current, limited by_T_jmax<br>_T_C= 25C<br>_T_C= 100C|_I_C<br>~~—}---——~~<br>~~|~~|10<br>6.2<br>~~—}---——~~<br>~~|~~|A<br>~~—}---——~~<br>~~|~~<br>~~a~~<br>~~|~~|
|Pulsed collector current,_t_plimited by_T_jmax|_I_C p u l s<br>~~|~~|18<br>~~|~~||
|Turn off safe operating area,_V_CE= 600V,_T_j= 175C,_t_p= 1µs|_-_<br>~~|~~<br>~~a~~|18<br>~~|~~<br>~~a~~||
|Diode forward current, limited by_T_jmax<br>_T_C= 25C<br>_T_C= 100C|_I_F<br>~~|~~|10.2<br>6.5<br>~~|~~||
|Diode pulsed current,_t_plimited by_T_jmax|_I_F p u l s<br>~~|~~|18<br>~~|~~||
|Gate-emitter voltage|_V_G E<br>~~es~~|20<br>~~es~~|V<br>~~es~~|
|Short circuit withstand time2) <br>_V_GE= 15V,_V_CC400V,_T_j 150C<br>~~_—_}~~|_t_S C<br>~~|~~<br>~~_—_}~~|5<br>~~|~~<br>~~_—_}__~~|s<br>~~|~~<br>~~__~~|
|Power dissipation<br>_T_C= 25C<br>~~_—_}~~|_P_t o t<br>~~_—_}~~|28<br>~~_—_}__~~|W<br>~~__~~|
|Operating junction temperature<br>~~_—_}~~|_T_j<br>~~_—_}~~|-40...+175<br>~~_—_}__~~|C<br>~~__~~<br>~~|~~|
|Storage temperature<br>~~_—_}~~|_T_s t g<br>~~_—_}~~<br>~~|~~|-55...+150<br>~~_—_} __~~<br>~~|~~||
|Isolation voltage|_V_i sol<br>~~|~~|2500<br>~~|~~|Vrm s<br>~~|~~|



- 1 J-STD-020 and JESD-022 

- 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 

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1 

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IKA06N60T 

TRENCHSTOP™ Series 

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## **Thermal Resistance** 

|**Thermal Resistance**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Max. Value**|**Unit**|
|**Characteristic**|||||
|IGBT thermal resistance,<br>junction – case|_R_t hJC||5.3|K/W|
|Diode thermal resistance,<br>junction – case|_R_t hJC D||6.5||
|Thermal resistance,<br>junction – ambient|_R_t hJA||80||



## **Electrical Characteristic,** at _T_ j = 25 C, unless otherwise specified 

|**Electrical Characteristic,**at_T_j= 25|C, unless ot|herwise specified|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ. **|**max.**||
|**Static Characteristic**|||||||
|Collector-emitter breakdown voltage|_V_( BR )C ES|_V_G E=0V,<br>_I_C=0.25mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_C E( sat )|_V_G E= 15V,_I_C=6A<br>_T_j=25C<br>_T_ j=175C|-<br>-|1.5<br>1.8|2.05||
|Diode forward voltage|_V_F|_V_G E=0V,_I_F=6A<br>_T_j=25C<br>_T_j=175C|-<br>-|1.6<br>1.6|2.05<br>-||
|Gate-emitter threshold voltage|_V_G E( t h)|_I_C=0.18mA,<br>_V_C E=_V_G E|4.1|4.6|5.7||
|Zero gate voltage collector current|_I_CE S|_V_C E=600V,_V_G E=0V<br>_T_j=25C<br>_T_ j=175C|-<br>-|-<br>-|40<br>700|µA|
|Gate-emitter leakage current|_I_GE S|_V_C E=0V,_V_G E=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_C E=20V,_I_C=6A|-|3.6|-|S|
|Integratedgate resistor|_RG int_|||none||Ω|
|**Dynamic Characteristic**|||||||
|Input capacitance|_C_i ss|_V_C E=25V,<br>_V_G E=0V,<br>_f_=1MHz|-|368|-|pF|
|Output capacitance|_C_os s||-|28|-||
|Reverse transfer capacitance|_C_rs s||-|11|-||
|Gate charge|_Q_Gat e|_V_C C=480V,_I_C=6A<br>_V_G E=15V|-|42|-|nC|
|Internal emitter inductance<br>measured 5mm(0.197 in.)from case|_L_E||-|7|-|nH|
|Short circuit collector current1)|_I_C( SC )|_V_G E=15V,_t_SC5s<br>_V_C C= 400V,<br>_T_j=  25C|-|55|-|A|



> 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 

Rev. 2.5   20.09.2013 

2 

IFAG IPC TD VLS 

IKA06N60T 

TRENCHSTOP™ Series 

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## **Switching Characteristic, Inductive Load,** at _T_ j=25 C 

|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**Typ. **|**max.**||
|**IGBT Characteristic**|||||||
|Turn-on delaytime|_t_d( o n)|_T_j=25C,<br>_V_C C=400V,_I_C=6A,<br>_V_G E=0/15V,_r_G=23,<br>_L_=60nH,_C_=40pF<br>_L_,_C_from Fig. E<br>Energy losses include<br>“tail” and diode reverse<br>recovery.|-|9.4|-|ns|
|Rise time|_t_r||-|5.6|-||
|Turn-off delaytime|_t_d( of f)||-|130|-||
|Fall time|_t_f||-|58|-||
|Turn-on energy|_E_o n||-|0.09|-|mJ|
|Turn-off energy|_E_o ff||-|0.11|-||
|Total switchingenergy|_E_t s||-|0.2|-||
|**Anti-Parallel Diode Characteristic**|||||||
|Diode reverse recoverytime|_t_rr|_T_j=25C,<br>_V_R=400V,_I_F=6A,<br>_di_F_/dt_=550A/s|-|123|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|190|-|nC|
|Diodepeak reverse recoverycurrent|_I_rr m||-|5.3|-|A|
|Diode peak rate of fall of reverse<br>recovery current during_t_b|_di_rr_/dt_||-|450|-|A/s|



## **Switching Characteristic, Inductive Load,** at _T_ j=175 C 

|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBT Characteristic**|||||||
|Turn-on delaytime|_t_d( o n)|_T_j=175C,<br>_V_C C=400V,_I_C=6A,<br>_V_G E=0/15V,_r_G=23,<br>_L_=60nH,_C_=40pF<br>_L_,_C_from Fig. E<br>Energy losses include<br>“tail” and diode reverse<br>recovery.|-|8.8|-|ns|
|Rise time|_t_r||-|8.2|-||
|Turn-off delaytime|_t_d( of f)||-|165|-||
|Fall time|_t_f||-|84|-||
|Turn-on energy|_E_o n||-|0.14|-|mJ|
|Turn-off energy|_E_o ff||-|0.18|-||
|Total switchingenergy|_E_t s||-|0.335|-||
|**Anti-Parallel Diode Characteristic**|||||||
|Diode reverse recoverytime|_t_rr|_T_j=175C<br>_V_R=400V,_I_F=6A,<br>_di_F_/dt_=550A/s|-|180|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|500|-|nC|
|Diodepeak reverse recoverycurrent|_I_rr m||-|7.6|-|A|
|Diode peak rate of fall of reverse<br>recovery current during_t_b|_di_rr_/dt_||-|285|-|A/s|



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IKA06N60T 

TRENCHSTOP™ Series 

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**----- Start of picture text -----**<br>
t p =1µs<br>10A 5µs<br>15A 10µs<br>T C=80°C<br>10A 1A 50µs<br>T C=110°C<br>5A Ic 500µs<br>0,1A 5ms<br>Ic<br>DC<br>0A<br>10Hz 100Hz 1kHz 10kHz 100kHz<br>1V 10V 100V 1000V<br>f , SWITCHING FREQUENCY V CE, COLLECTOR-EMITTER VOLTAGE<br>Figure 1. Collector current as a function of  Figure 2. Safe operating area<br>switching frequency  ( D =  0,  T C = 25C,<br>( T j  175C,  D =  0.5,  V CE = 400V,   T j 175C; V GE=0/15V)<br>V GE = 0/15V,  r G = 23)<br>8A<br>25W<br>20W<br>6A<br>15W<br>4A<br>10W<br>2A<br>5W<br>0A<br>0W 25°C 75°C 125°C<br>25°C 50°C 75°C 100°C 125°C 150°C<br>T C, CASE TEMPERATURE T C, CASE TEMPERATURE<br>COLLECTOR CURRENT COLLECTOR CURRENT<br>,  ,<br>I C I C<br>POWER DISSIPATION<br>, COLLECTOR CURRENT<br>tot ,<br>P I C<br>**----- End of picture text -----**<br>


**Figure 3. Power dissipation as a function of case temperature** ( _T_ j  175C) 

**Figure 4. Collector current as a function of case temperature** ( _V_ GE  15V, _T_ j  175C) 

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## TRENCHSTOP™ Series 

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**----- Start of picture text -----**<br>
15A 15A<br>V GE =20V V GE =20V<br>12A 15V 12A 15V<br>13V 13V<br>9A 11V 9A 11V<br>9V 9V<br>6A 7V 6A 7V<br>3A 3A<br>0A 0A<br>0V 1V 2V 3V 0V 1V 2V 3V<br>V CE, COLLECTOR-EMITTER VOLTAGE V CE, COLLECTOR-EMITTER VOLTAGE<br>Figure 5. Typical output characteristic  Figure 6. Typical output characteristic<br>( T j = 25°C)  ( T j = 175°C)<br>3,0V<br>15A<br>IC =12A<br>2,5V<br>12A<br>2,0V<br>9A IC =6A<br>1,5V<br>6A<br>1,0V I C =3A<br>3A T J=175°C 0,5V<br>25°C<br>0A 0,0V<br>0V 2V 4V 6V 8V 10V -50°C 0°C 50°C 100°C<br>V GE, GATE-EMITTER VOLTAGE T J, JUNCTION TEMPERATURE<br>COLLECTOR CURRENT COLLECTOR CURRENT<br>,  ,<br>I C I C<br>EMITT SATURATION VOLTAGE<br>-<br>COLLECTOR CURRENT<br>,<br>I C<br>COLLECTOR<br>CE(sat),<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 7. Typical transfer characteristic<br>(VCE=20V)<br>**----- End of picture text -----**<br>


**Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature** ( _V_ GE = 15V) 

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**----- Start of picture text -----**<br>
t d(off)<br>t f<br>100ns<br>t<br>d(on)<br>10ns<br>t r<br>1ns<br>0A 3A 6A 9A 12A 15A<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IC , COLLECTOR CURRENT<br>**----- End of picture text -----**<br>


**Figure 9. Typical switching times as a function of collector current** (inductive load, _T_ J=175°C, _V_ CE = 400V, VGE = 0/15V, _r_ G = 23Ω, Dynamic test circuit in Figure E) 

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**----- Start of picture text -----**<br>
100ns t d(off)<br>t f<br>t<br>d(on)<br>10ns<br>t r<br>1ns<br>50°C 100°C 150°C<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
T J, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br>


- **Figure 11. Typical switching times as a function of junction temperature** (inductive load, _V_ CE = 400V, VGE = 0/15V, _I_ C = 6A, _r_ G = 23Ω, Dynamic test circuit in Figure E) 

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**----- Start of picture text -----**<br>
t<br>d(off)<br>100ns<br>t f<br>t<br>d(on)<br>t r<br>10ns<br>1ns<br>    <br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
R G, GATE RESISTOR<br>**----- End of picture text -----**<br>


**Figure 10. Typical switching times as a function of gate resistor** (inductive load, _T_ J=175°C, 

_V_ CE = 400V, VGE = 0/15V, _I_ C = 6A, Dynamic test circuit in Figure E) 

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**----- Start of picture text -----**<br>
6V<br>5V max.<br>4V typ.<br>3V<br>min.<br>2V<br>1V<br>0V<br>-50°C 0°C 50°C 100°C 150°C<br>EMITT TRSHOLD VOLTAGE<br>-<br>GATE<br>GE(th ) ,<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
T J, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br>


**Figure 12. Gate-emitter threshold voltage as a function of junction temperature** ( _I_ C = 0.18mA) 

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**----- Start of picture text -----**<br>
*)  E on  and  E ts  include losses *)  E on and  E ts include losses<br>0,6 mJ    due to diode recovery    due to diode recovery E ts *<br>0,5 mJ E ts * 0,4 mJ<br>0,4 mJ 0,3 mJ E on *<br>0,3 mJ E off 0,2 mJ E off<br>0,2 mJ E on *<br>0,1 mJ<br>0,1 mJ<br>0,0 mJ 0A 2A 4A 6A 8A 10A 0,0 mJ   <br>IC , COLLECTOR CURRENT R G, GATE RESISTOR<br>Figure 13. Typical switching energy losses  Figure 14. Typical switching energy losses<br>as a function of collector current  as a function of gate resistor<br>(inductive load,  T J=175°C,  (inductive load,  T J=175°C,<br>V CE=400V, VGE=0/15V,  r G=23Ω,   V CE = 400V, VGE = 0/15V,  I C = 6A,<br>Dynamic test circuit in Figure E)  Dynamic test circuit in Figure E)<br>*)  E on and  E ts include losses  *)  E on and  E ts include losses<br>    due to diode recovery<br>    due to diode recovery<br>0,4mJ 0,5mJ<br>E ts*<br>0,4mJ<br>0,3mJ<br>E ts* 0,3mJ E off<br>0,2mJ<br>0,2mJ<br>E off E on*<br>0,1mJ<br>0,1mJ<br>E on*<br>0,0mJ 0,0mJ<br>50°C 100°C 150°C 200V 300V 400V 500V<br>T J, JUNCTION TEMPERATURE VCE , COLLECTOR-EMITTER VOLTAGE<br>SWITCHING ENERGY LOSSES SWITCHING ENERGY LOSSES<br>,  ,<br>E E<br>SWITCHING ENERGY LOSSES SWITCHING ENERGY LOSSES<br>,  ,<br>E E<br>**----- End of picture text -----**<br>


## **Figure 15. Typical switching energy losses as a function of junction temperature** 

- (inductive load, _V_ CE=400V, VGE = 0/15V, _I_ C = 6A, _r_ G = 23Ω, Dynamic test circuit in Figure E) 

**Figure 16. Typical switching energy losses as a function of collector emitter voltage** 

- (inductive load, _T_ J = 175°C, VGE = 0/15V, _I_ C = 6A, _r_ G = 23Ω, Dynamic test circuit in Figure E) 

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## TRENCHSTOP™ Series 

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**----- Start of picture text -----**<br>
15V<br>120V<br>10V<br>480V<br>5V<br>0V<br>0nC 10nC 20nC 30nC 40nC 50nC<br>EMITTER VOLTAGE<br>-<br>GATE<br>,<br>GE<br>V<br>**----- End of picture text -----**<br>


_Q_ GE, GATE CHARGE 

**Figure 17. Typical gate charge** ( _I_ C=6 A) 

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**----- Start of picture text -----**<br>
1nF<br>C iss<br>100pF<br>C oss<br>C rss<br>10pF<br>0V 10V 20V<br>CAPACITANCE<br>c,<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V CE, COLLECTOR-EMITTER VOLTAGE<br>**----- End of picture text -----**<br>


**Figure 18. Typical capacitance as a function of collector-emitter voltage** ( _V_ GE=0V, _f_ = 1 MHz) 

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**----- Start of picture text -----**<br>
80A<br>60A<br>40A<br>20A<br>0A<br>12V 14V 16V 18V<br>COLLECTOR CURRENT<br>, short circuit<br>I C(sc)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V GE, GATE-EMITTETR VOLTAGE<br>**----- End of picture text -----**<br>


**Figure 19. Typical short circuit collector current as a function of gateemitter voltage** 

( _V_ CE  400V, _T_ j  150C) 

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**----- Start of picture text -----**<br>
12µs<br>10µs<br>8µs<br>6µs<br>4µs<br>2µs<br>0µs<br>10V 11V 12V 13V 14V<br>SHORT CIRCUIT WITHSTAND TIME<br>t SC,<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V GE, GATE-EMITETR VOLTAGE<br>**----- End of picture text -----**<br>


**Figure 20. Short circuit withstand time as a** 

**function of gate-emitter voltage** ( _V_ CE=400V _,_ start at _T_ J _=_ 25°C, _T_ Jmax<150°C) 

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## TRENCHSTOP™ Series 

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**----- Start of picture text -----**<br>
D =0.5<br>10 0K/W 0.2 0.381  R , ( K / W ) 1.867  , ( * s 10 ) [-][2] 6<br>0.1 2.57  1.350<br>0.645 2.208*10 [-3]<br>0.05 1.454  5.474*10 [-][4]<br>0.062  5.306*10 [-][5]<br>0.186  5.926*10 [-1]<br>0.02 R 1 R 2<br>10 -1K/W 0.01<br>C 1=1/ R 1 C 2=2/ R 2<br>single pulse<br>10µs 100µs 1ms 10ms 100ms 1s 1<br>TRANSIENT THERMAL IMPEDANCE<br>,<br>thJC<br>Z<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
D =0.5<br>0.2 R , ( K / W )  , ( s )<br>0.403 1.773*10 [-2] 6<br>10 0K/W 2.57  1.346<br>0.1 *<br>0.938  1.956 10 [-][3]<br>2.33  4.878*10 [-4]<br>0.05 0.071  4.016 * 10 [-5]<br>0.188 5.684 * 10 [-1]<br>0.02 R 1 R 2<br>0.01<br>10 -1K/W<br>C 1=1/ R 1 C 2=2/ R 2<br>single pulse<br>10 -2K/W<br>10µs 100µs 1ms 10ms 100ms 1s 1<br>TRANSIENT THERMAL IMPEDANCE<br>,<br>thJC<br>Z<br>**----- End of picture text -----**<br>


_t_ P, PULSE WIDTH 

_t_ P, PULSE WIDTH 

**Figure 21. IGBT transient thermal impedance** ( _D = t_ p / _T_ ) 

## **Figure 22. Diode transient thermal impedance as a function of pulse width** 

( _D_ = _t_ P/ _T_ ) 

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**----- Start of picture text -----**<br>
250ns<br>200ns<br>T =175°C<br>J<br>150ns<br>100ns<br>T =25°C<br>J<br>50ns<br>0ns<br>200A/µs 400A/µs 600A/µs 800A/µs<br>REVERSE RECOVERY TIME<br>,<br>t rr<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0,5µC<br>T =175°C<br>J<br>0,4µC<br>0,3µC<br>0,2µC<br>T =25°C<br>J<br>0,1µC<br>0,0µC<br>200A/µs 400A/µs 600A/µs 800A/µs<br>REVERSE RECOVERY CHARGE<br>,<br>rr<br>Q<br>**----- End of picture text -----**<br>


_di_ F _/dt_ , DIODE CURRENT SLOPE 

**Figure 23. Typical reverse recovery time as a function of diode current slope** ( _V_ R = 400V, _I_ F = 6A, Dynamic test circuit in Figure E) 

_di_ F _/dt_ , DIODE CURRENT SLOPE 

## **Figure 24. Typical reverse recovery charge as a function of diode current slope** 

( _V_ R = 400V, _I_ F = 6A, Dynamic test circuit in Figure E) 

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**==> picture [228 x 210] intentionally omitted <==**

**----- Start of picture text -----**<br>
T =175°C<br>J<br>8A<br>6A T J=25 ° C<br>4A<br>2A<br>0A<br>200A/µs 400A/µs 600A/µs 800A/µs<br>REVERSE RECOVERY CURRENT<br>I rr,<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
-500A/µs<br>T =25°C<br>J<br>-400A/µs<br>-300A/µs<br>T =175°C<br>J<br>-200A/µs<br>-100A/µs<br>0A/µs<br>200A/µs 400A/µs 600A/µs 800A/µs<br>DIODE PEAK RATE OF FALL<br>,<br>/dt<br>rr<br>di OF REVERSE RECOVERY CURRENT<br>**----- End of picture text -----**<br>


## _di_ F _/dt_ , DIODE CURRENT SLOPE 

## **Figure 25. Typical reverse recovery current as a function of diode current slope** 

( _V_ R = 400V, _I_ F = 6A, Dynamic test circuit in Figure E) 

## _di_ F _/dt_ , DIODE CURRENT SLOPE 

**Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope** ( _V_ R = 400V, _I_ F = 6A, Dynamic test circuit in Figure E) 

**==> picture [235 x 236] intentionally omitted <==**

**----- Start of picture text -----**<br>
10A<br>8A<br>6A<br>4A<br>T J =175 ° C<br>2A 25°C<br>0A<br>0,0V 0,5V 1,0V 1,5V 2,0V<br>V F, FORWARD VOLTAGE<br>FORWARD CURRENT<br>,<br>I F<br>**----- End of picture text -----**<br>


**Figure 27. Typical diode forward current as a function of forward voltage** 

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**----- Start of picture text -----**<br>
2,0V I F =12A<br>6A<br>1,5V<br>3A<br>1,0V<br>0,5V<br>0,0V<br>0°C 50°C 100°C 150°C<br>FORWARD VOLTAGE<br>,<br>F<br>V<br>**----- End of picture text -----**<br>


**==> picture [119 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
T J, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br>


**Figure 28. Typical diode forward voltage as a function of junction temperature** 

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## TRENCHSTOP™ Series 

## PG-TO220-3 (FullPAK) 

**Please refer to mounting instructions** 

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## TRENCHSTOP™ Series 

**Figure A. Definition of switching times** 

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**----- Start of picture text -----**<br>
i,v<br>di F /dt t r r =t S + t F<br>/ Q r r =Q S + Q F<br>t<br>r r<br>I F — t S t F<br>I Q S Q F 10%  I r r m t<br>r r m 90%  I di r r /dt V R<br>r r m<br>Figure C. Definition of diodes<br>switching characteristics<br>1 2 n<br>r1 r 2 r n<br>T (t)j<br>p(t) r1 r 2 r n<br>T C<br>**----- End of picture text -----**<br>


**Figure D. Thermal equivalent circuit** 

**Figure B. Definition of switching losses** 

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**==> picture [137 x 61] intentionally omitted <==**

## **Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( **www.infineon.com** ) **.** 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

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---

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