# IGBT, 80 A, 1.65 V, 394 W, 1.35 kV, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2986346/)

**URL**: https://novapart.co/products/IHW40N135R5XKSA1/igbt-80-a-165-v-394-w-135-kv-to-247-3-pins
**SKU**: IHW40N135R5XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.6300
**Stock**: 200+
**Lead Time**: 260 days (indicative)

## Description

DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:394W; Collector Emitter Voltage V(br)ceo:1.35kV; Transistor Case Style:TO-247; No. of Pi

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 394W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 80A |
| Collector Emitter Voltage Max | 1.35kV |
| Collector Emitter Saturation Voltage | 1.65V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2986346/)

IHW40N135R5 

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C<br>monolithic body diode with low forward voltage<br>for soft commutation<br>_ technology offering:<br>tight parameter distribution<br>G<br>ruggedness, temperature stable behavior<br>E<br>CEsat<br>parallel switching capability due to positive<br>coefficient in V CEsat<br>EMI<br>according to JESD-022 for target applications 2<br>lead plating; ROHS compliant a,<br>free (according to IEC 61249-2-21) rp tinegy<br>product spectrum and PSpice Models: “Sg<br>cooking<br>ovens G<br>C<br>E<br>**----- End of picture text -----**<br>


## **Features:** 

http://www.infineon.com/igbt/ 

## **Applications:** 

|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IHW40N135R5|1350V|40A|1.65V|175°C|H40PR5|PG-TO247-3|



Datasheet www.infineon.com 

2018-09-17 

IHW40N135R5 

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## Resonant�Switching�Series 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 

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## Resonant�Switching�Series 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||1350|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||80.0<br>40.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤1350V,_T_vj≤175°C,_t_p=1µs|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||80.0<br>40.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||120.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±25|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||394.0<br>197.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|



|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.38|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.38|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|



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## Resonant�Switching�Series 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1350|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.95<br>2.05|1.95<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.95<br>2.30<br>2.40|2.15<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.00mA,_V_CE=_V_GE|5.1|5.8|6.4|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1350V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>850|100<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|30.0|-|S|
|Integratedgate resistor|_r_G|||none||Ω|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2360|-|pF|
|Output capacitance|_C_oes||-|70|-||
|Reverse transfer capacitance|_C_res||-|60|-||
|Gate charge|_Q_G|_V_CC=1080V,_I_C=40.0A,<br>_V_GE=15V|-|305.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=25°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=175nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|410|-|ns|
|Fall time|_t_f||-|90|-|ns|
|Turn-off energy|_E_off||-|2.00|-|mJ|
|Turn-off energy, soft switching|_E_off|_dv/dt_=200.0V/µs|-|0.30|-|mJ|



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## Resonant�Switching�Series 

## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=175°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=175nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|480|-|ns|
|Fall time|_t_f||-|220|-|ns|
|Turn-off energy|_E_off||-|3.70|-|mJ|
|Turn-off energy, soft switching|_E_off|_dv/dt_=200.0V/µs|-|0.85|-|mJ|



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**----- Start of picture text -----**<br>
400<br>100 | 360 ON<br>eeee<br>i a ee 320 N<br>not for linear use<br>—=< (LA F alk To Lut)Ue = 280 Py IN\ ET EE<br>Se ioe 10 eee je)Bb 240 Ne\<br>BOOFSa SALYrGREER ESSEi}SHS 200 PET TEAL\ TLL}<br>S CIP<br>CeCeri ein) 9 160 PET TEEN | | | | 4<br>5)s- 1 ———LUMSs a&@° 120 EEN \ EL<br>a<br>CTa 80 PET TT EL LIN\ YI<br>I SRRReeEERNG<br>40<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE =15V; t p=1µs) temperature<br>( T vj ≤ 175°C)<br>I C P tot<br>**----- End of picture text -----**<br>


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80 120<br>100<br>VGE=20V<br>60<br>< \ 17V +f /<br>5 \ <5 80 all; /<br>15V<br>13V<br>DD<br>:ag ag f<br>:w 40 \\ :3w 60 11V HT}|Aa<br>FE FE 9V<br>O \ O |/<br>5 O 7V | |<br>40<br>fe) fe) |<br>5V<br>20 \ 20 Ne<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>**----- End of picture text -----**<br>


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120 7 120 Ld<br>VGE=20V Tvj = 25°C<br>Tvj =175°C<br>17V<br>100 15V \ / 100 |<br>13V<br>11V<br>-E 80 \\ A - i 80<br>oc 9V oc /<br>2 WA g I<br>a) 7V a)<br>60 60<br>(e)S 5V \ Mi / (e)S |<br>==<br>Ww3 40 Uf Ww 40<br>Wy |<br>: __ 3<br>WY :<br>20 20<br>Jv |<br>0 0<br>0 1 2 3 4 5 0 2 4 6 8 10 12 14<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>


Figure 5. Typical output characteristic Figure 6. Typical ( _T_ vj=175°C) ( _V_ CE=20V) 

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3.5<br>IC = 20A<br>IC = 40A<br>IC = 80A<br>= 3.0 elo 27<br>5= oe<br>Ee oa<br>oa<br>Ee ue<br>2.5<br>Bo er<br>WW<br>or(oe) 2.0 _ — —_—<br>5 ae<br>lu= a _e<br>9<br>1.5<br>1.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>CEsat<br>V<br>**----- End of picture text -----**<br>


Figure 7. Typical a function ( _V_ GE=15V) 

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td(off)<br>tf<br>1000 Ti A<br>I i |<br>a<br>= e<br>ory a S e ee ee e e ee<br>ef |---+-+-4<br>7<br>EeoO 100 A<br>= a<br>. Eea ee ee ee ee<br>a ee ee ee ee eee<br>10<br>0 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A]<br>t<br>**----- End of picture text -----**<br>


Figure 8. 

(inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _r_ G=10 Ω , Dynamic test Figure E) 

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1E+4 1000<br>1 se ttd(off)f a a I ttd(off)f a ee ee<br>ee a<br>I e e<br>z = Pict} | Ty tt yy<br>1000 a —o te {ttee<br>ip) ee ee _<br>im a esce ee ee ee ip) - -_<br>-7<br>2 100<br>: ee ee 2S<br>EF = Th EF2<br>z 100 ee = ft [tPrrprry]<br>ens ee dOyt<br>a eeee<br>es ee ee ee ee<br>10 10<br>0 10 20 30 40 50 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =40A,Dynamic test circuit in I C =40A, r G=10 ,Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>


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7.0 7.0<br>Eoff<br>typ.<br>min.<br>max. 6.0<br>: =e ]} Fly<br>6.2 Ss<br>Qa):> >SSS . op)aa 5.0 / Va<br>ce) 5.4 ~ SSae (op)g<br>4.0<br>i > = Z<br>aa . wa VA<br>WwoE= 4.6 ~N ~ S SN SNG S WwOZz5 3.0 WA<br>ti aw . FE 2.0 /<br>S \ é<br>0) 3.8 Z -<br>NX 1.0 y<br>3.0 0.0<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>of junction temperature function of collector current<br>( I C=1mA) T j V CE=600V,<br>V tote GE = oat; R G=10 tee, Ω , Dynamicic testtest circuitcircuit in<br>Figure E)<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
6.0 4.0<br>Eoff Eoff<br>—— =)<br>5.5<br>3.5<br>Ww Ww<br>Pre)g “| Lae4 Cy/<br>5.0<br>éa] v1)—! 3.0 tityZ|<br>g: LLy ge TL A<br>4.5<br>: / Se<br>2 2.5<br>5<br>4.0<br>—=; / ( Z Be—= F ZO<br>2.0<br>| p ee ae<br>3.5<br>PC<br>3.0 1.5<br>0 10 20 30 40 50 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =40A, Dynamic test circuit in I C =40A, r G=10 ,Dynamic test circuit in<br>Figure E) Figure E)<br>5.5 2.0<br>Eoff Tvj = 25°C<br>1.8 Tvj = 175°C<br>5.0 — y EJ), /<br>1.6<br>op) or) /<br>Ww Ww 1.4<br>2 4.5 é2<br>g<br>—! 1.2<br>>>—! / g /<br>2<br>eT tit<br>4.0 1.0<br>s c s iy |<br>: / SY<br>22II= 0.8 /<br>3.5<br>0.6<br>; Zona<br>0.4<br>3.0<br>aA | a a<br>0.2<br>wia | | | |<br>2.5 0.0<br>400 500 600 700 800 900 1000 0 10 20 30 40 50 60 70 80<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] I C , COLLECTOR CURRENT [A]<br>E E<br>E E<br>**----- End of picture text -----**<br>


Figure 15. 

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**----- Start of picture text -----**<br>
(inductive load, T vj =175°C, V GE=0/15V,<br>I C =40A, r G=10 ,Dynamic test circuit in<br>Figure E)<br>**----- End of picture text -----**<br>


Figure 16. 

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**----- Start of picture text -----**<br>
V CE =600V, V GE=0/15V,<br>**----- End of picture text -----**<br>


_R_ G=10 

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**----- Start of picture text -----**<br>
16 1E+4 aa<br>14 —- VV CCCC = =1080V / y7, 1 H I{ CCCiesoesres aaaa aaaee ee ee<br>y, a<br>/ |  T T<br>S 12<br>1000<br>4 J / , | | | ft |<br>a 10 i a ee ee ee ee<br>fe) | Sf y Ww a<br>S oO Bh aee<br>owWW: 8 PF | Zero) ee ee ee<br>in: 6 2°< ikSanSS<br>100<br>O po ee<br>- EO<br>4 a ee=<br>a es<br>2<br>a a<br>0 10<br>0 62 124 186 248 310 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of<br>( I C=40A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1 | 1 TT Ee<br>| | | | | | |<br>PT TT TT PT TT<br>CC ooo oo oon CC oo oo<br>PTE TT ||<br>_= Pf Ey = Pf i t<br>zg. ae a cael ema zg. I ect TT<br>ieee 0 s e e<br>D = 0.5<br>F 0.1 bZ F 0.1 WAI<br>UAC @ = COI<br>7) eri 0.2<br>Ww mmm eS /A ee | Ww aeme a TE Ht|<br>cE D = 0.5 HE = SS 0.1<br>z EIS 0.2 CM TM = eer TTT 0.05 1I<br>0.1 0.02<br>= ae eles L LUI EI) Ae eat 1<br>0.05<br>Bet Wa eh bei ese 0.01<br>0.02<br>single pulse<br>aLoO 0.01 B=7Vi AMUN)seaeRe 0.01 YAHE |HHH] Ea5 0.01 a)BKPe  aac/HHI<br>single pulse<br>Zz eS Zz TAT<br>sean ACEly TT| TET [oo s PAV7A eo Tn PTT pe<br>/ ~<br>~ mnt Gage RO<br>PAI | UM gees — [I AIM (EITM UMM tosis carter Il<br>i: 1 2 3 4 i: 1 2 3 4<br>ri[K/W]: 6.6E-3 0.108909 0.154872 0.109704 ri[K/W]: 0.03881 0.08583 0.11772 0.13766<br>τ i[s]: 1.1E-5 2.9E-4 3.5E-3 0.02156 τ i[s]: 7.0E-5 1.0E-4 2.7E-3 0.02792<br>0.001 Nh ee| 0.001 f Hl PE ET<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]]<br>Figure 19. IGBT transient thermal resistance Figure 20. Diode transient thermal impedance as a<br>( D = t p/T) function of pulse width<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>


( _D_ = _t_ p/T) 

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**----- Start of picture text -----**<br>
120 Ld 4.0 a<br>Tvj = 25°C IF = 20A<br>Tvj = 175°C IF = 40A<br>IF = 80A<br>100 || | / 3.5 T T je"<br>= 80 uw 3.0 7<br>iM // iv)< - pe<br>ag / re} 7<br>3Q 60 / > 2.5<br>aw ce _<br><x = _<br>= 5 _<br>a _<br>oO oO<br>rm 40 f LL 2.0<br>| /‘ . ann<br>20 1.5<br>0 1.0<br>0 1 2 3 4 5 6 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>


Figure 21. 

Figure 22. 

11 

Datasheet 

2018-09-17 

IHW40N135R5 

**==> picture [86 x 38] intentionally omitted <==**

## Resonant�Switching�Series 

## **Package Drawing PG-TO247-3** 

12 

V�2.2 2018-09-17 

Datasheet 

IHW40N135R5 

**==> picture [86 x 38] intentionally omitted <==**

## Resonant�Switching�Series 

## **Testing Conditions** 

**==> picture [252 x 588] intentionally omitted <==**

**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


**==> picture [189 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


**==> picture [7 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


**==> picture [169 x 63] intentionally omitted <==**

Figure D. 

**==> picture [7 x 4] intentionally omitted <==**

**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

13 

V�2.2 2018-09-17 

Datasheet 

IHW40N135R5 

**==> picture [86 x 38] intentionally omitted <==**

## Resonant�Switching�Series 

## **Revision�History** 

IHW40N135R5 

## **Revision:�2018-09-17,�Rev.�2.2** 

## Previous Revision 

|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2018-04-17|FINAL DATASHEET|
|2.2|2018-09-17|Added thermal network on Fig.19 & 20|



14 

V�2.2 2018-09-17 

Datasheet 

## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/IHW40N135R5XKSA1/igbt-80-a-165-v-394-w-135-kv-to-247-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ihw40n135r5xksa1/igbt-1-35kv-80a-394w-to-247/dp/2986346)
---

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