# IGBT, 60 A, 1.55 V, 330 W, 1.2 kV, TO-247, 3 Pins
**URL**: https://novapart.co/products/IHW30N120R5XKSA1/igbt-60-a-155-v-330-w-12-kv-to-247-3-pins
**SKU**: IHW30N120R5XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.3200
**Stock**: 200+
**Lead Time**: 260 days (indicative)
## Description
DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:330W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 330W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 60A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 1.55V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2986343/)
IHW30N120R5
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**----- Start of picture text -----**
C
monolithic body diode with low forward voltage
for soft commutation
_ technology offering:
tight parameter distribution
G
ruggedness, temperature stable behavior
E
CEsat
parallel switching capability due to positive
coefficient in V CEsat
EMI
according to JESD-022 for target applications 2
lead plating; ROHS compliant a,
free (according to IEC 61249-2-21) rp tinegy
product spectrum and PSpice Models: “Sg
cooking
ovens G
C
E
**----- End of picture text -----**
## **Features:**
http://www.infineon.com/igbt/
## **Applications:**
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IHW30N120R5|1200V|30A|1.55V|175°C|H30MR5|PG-TO247-3|
Datasheet www.infineon.com
2018-09-18
IHW30N120R5
**==> picture [86 x 38] intentionally omitted <==**
## Resonant�Switching�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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Datasheet
IHW30N120R5
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## Resonant�Switching�Series
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||1200|V|
|DCcollectorcurrent,limitedby_T_vjmax
_T_c=25°C
_T_c=100°C|_I_C||60.0
30.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||90.0|A|
|Turn off safe operating area
_V_CE≤1200V,_T_vj≤175°C,_t_p=1µs|-||90.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax
_T_c=25°C
_T_c=100°C|_I_F||60.0
30.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||90.0|A|
|Gate-emitter voltage
TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20
±25|V|
|Powerdissipation_T_c=25°C
Powerdissipation_T_c=100°C|_P_tot||330.0
165.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,
wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw
Maximum of mounting processes: 3|_M_||0.6|Nm|
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,
junction - case|_R_th(j-c)||-|-|0.45|K/W|
|Diode thermal resistance,
junction - case|_R_th(j-c)||-|-|0.45|K/W|
|Thermal resistance
junction - ambient|_R_th(j-a)||-|-|40|K/W|
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IHW30N120R5
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## Resonant�Switching�Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A
_T_vj=25°C
_T_vj=125°C
_T_vj=175°C|-
-
-|1.55
1.80
1.90|1.85
-
-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=30.0A
_T_vj=25°C
_T_vj=125°C
_T_vj=175°C|-
-
-|1.80
2.00
2.10|2.00
-
-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.75mA,_V_CE=_V_GE|5.1|5.8|6.4|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V
_T_vj=25°C
_T_vj=175°C|-
-|-
630|100
-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|23.0|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1800|-|pF|
|Output capacitance|_C_oes||-|55|-||
|Reverse transfer capacitance|_C_res||-|45|-||
|Gate charge|_Q_G|_V_CC=960V,_I_C=30.0A,
_V_GE=15V|-|235.0|-|nC|
|Internal emitter inductance
measured 5mm (0.197 in.) from
case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=25°C,
_V_CC=600V,_I_C=30.0A,
_V_GE=0.0/15.0V,
_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,
_L_σ=175nH,_C_σ=40pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|330|-|ns|
|Fall time|_t_f||-|33|-|ns|
|Turn-off energy|_E_off||-|1.10|-|mJ|
|Turn-off energy, soft switching|_E_off|_dv/dt_=200.0V/µs|-|0.12|-|mJ|
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Datasheet
4
IHW30N120R5
**==> picture [86 x 38] intentionally omitted <==**
## Resonant�Switching�Series
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=175°C,
_V_CC=600V,_I_C=30.0A,
_V_GE=0.0/15.0V,
_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,
_L_σ=175nH,_C_σ=40pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|395|-|ns|
|Fall time|_t_f||-|125|-|ns|
|Turn-off energy|_E_off||-|2.30|-|mJ|
|Turn-off energy, soft switching|_E_off|_dv/dt_=200.0V/µs|-|0.37|-|mJ|
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Datasheet
5
IHW30N120R5
**==> picture [474 x 642] intentionally omitted <==**
**----- Start of picture text -----**
100 330
ee | 297
not for linear use
Aee ep ee ee eeeTT 264 PN\ fF ff oy
a ee e e
231
=5 10 UCTeeeUIITir) Zz¢ | NY\ tt
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rn I
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33
0.1 0
1 10 100 1000 25 50 75 100 125 150 175
V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]
Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case
( D =0, T C =25°C, T vj 175°C; V GE =15V; t p=1µs) temperature
( T vj ≤ 175°C)
60 90
VGE = 20V
80 17V
50 15V
~~ >
70
13V
: SNE
40 =| 60 SY 11V
9V
ane Re
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0 0
25 50 75 100 125 150 175 0 1 2 3 4 5
T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]
I C P tot
I C I C
**----- End of picture text -----**
Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C)
Figure 4. Typical ( _T_ vj=25°C)
6
Datasheet
2018-09-18
IHW30N120R5
**==> picture [471 x 313] intentionally omitted <==**
**----- Start of picture text -----**
90 90
VGE = 20V Tvj = 25°C
Tvj =175°C
80 17V SH// /_/ 80 —
TT |) IE
15V
70 ey) A 70 e e
13V
z Hh
11V
2 60 |OW:WY ae 60 lf|
9V
PL5 50 8V IKEOWEZF x 50 LpMl
7V
S| AWW de |
40 40
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NY
30 30
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ni) oan ee)
20 20
/PW
10 in) A> a 10 a / ae
ATI N
0 0
> 2 a eeee
0 1 2 3 4 5 2 4 6 8 10 12 14
V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]
Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic
( T vj=175°C) ( V CE=20V)
I C I C
**----- End of picture text -----**
**==> picture [471 x 286] intentionally omitted <==**
**----- Start of picture text -----**
3.0 1000 a
IC = 15A po td(off) hz
IICC = 30A = 60A a ee ee ee tf —
= es ol l en
S . See e e e
2.5
: ua ee
a “7 =
= a = _--
2.0 100
= g ee a a a
aT _ = a es eeee
eo O a a ee ee ee
O aa Ee a Pa ee ee ee
ss _- = a eeee
ul an ee ee ee
1.5
1.0 10
25 50 75 100 125 150 175 0 10 20 30 40 50 60
T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]
t
CEsat
V
**----- End of picture text -----**
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ n GE “O/15V. _r_ G=10 Ω , Dynamic test circuit in Figure E)
Datasheet
7
2018-09-18
IHW30N120R5
**==> picture [474 x 699] intentionally omitted <==**
**----- Start of picture text -----**
1E+4 1000
a
i td(off) a I td(off) a ee
tf tf
1 SS ee
| ee ee
pot | J}| hE ET__|______|__ Ipfoe a_}a_} [ff]
P| | te tT | | tT a
z 1000 eg FP
= —jez {|
on pp rea =
im aa aa ce on
= a ee ee ee eee =
100
g 2 ee g a a ee
ef
i i a ee ee ee
= 100 = = a a eee
a
a a aa a eeee
|__|} > _____ 2 i ee
a eeeeee
a
10 10
0 10 20 30 40 50 25 50 75 100 125 150 175
r G ,GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]
Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of
resistor junction temperature
(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,
V GE =0/15V, I C =30A, Dynamic test circuit in I C =30A, r G=10 , Dynamic test circuit in
Figure E) Figure E)
7.0 5
typ. E off
min.
max.
Ww S.
4O et fs _ | | | | dyVA
<¢ 6.2 .s me} 4
i sy =
Feps Lo. dgE LY/
je)DHPPM 5.4 mM ~ . ‘ — 7)ea> L 3 /
Lupe 4.6 fos~N RORXQ SS 9ES 2 LOKVA
ed a ee ee eee
ai ~ ~ =
en ee Ae
O 3.8 XS“ . 1
3.0 0
25 50 75 100 125 150 175 0 10 20 30 40 50 60
T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]
Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a
of junction temperature function of collector current
( I C=0.75mA) T vj V CE=600V,
V tote GE = oat; r G=10 Ω tec., Dynamicic testtest circuitcircuit |in
Figure E)
t t
E
GE(th)
V
**----- End of picture text -----**
8
Datasheet
2018-09-18
IHW30N120R5
**==> picture [474 x 679] intentionally omitted <==**
**----- Start of picture text -----**
3.2 2.5
E off E off
2.2
2.9
Ww Ww
7) 7)
on J, on
fe) o 1.9 VA
> > /
v4 2.6 : v4
Ww / Ww
1.6
OO
= = /
EE
nn 2.3
1.3
2.0 1.0
0 10 20 30 40 50 25 50 75 100 125 150 175
r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]
Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a
function of gate resistor function of junction temperature
(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,
V GE =0/15V, I C =30A, Dynamic test circuit in I C =30A, r G=10 , Dynamic test circuit in
Figure E) Figure E)
2.7 1.0
E off Tvj = 25°C
Tvj = 175°C
ET TIT.) 0.9 ELL
0.8
ee ee {i tt
2.4
ee ae 0.7 :
; je | | | | | oY
2 Z 2
ee—! / —! 0.6 ’
> > 7
O O 7
eye 2.1 | 0.5
BP
0.4
eLTVETif ti ysL 0.3 Poe
=aw,TA 1.8 ele=a a7 =
0.2
AG 0.1 / SS_
aa
pa
1.5 0.0
PPE EE ET ae7
400 450 500 550 600 650 700 750 800 0 10 20 30 40 50 60
V CE , COLLECTOR-EMITTER VOLTAGE [V] I C , COLLECTOR CURRENT [A]
Figure 15. Typical switching energy losses as a Figure 16. Typical turn off switching energy loss for
function of collector emitter voltage soft switching
(inductive load, T vj =175°C, V GE=0/15V, (inductive load, V CE =600V, V GE=0/15V,
E E
E E
**----- End of picture text -----**
**==> picture [56 x 20] intentionally omitted <==**
**----- Start of picture text -----**
I C =30A, r G=10
Figure E)
**----- End of picture text -----**
_r_ G=10
9
Datasheet
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IHW30N120R5
**==> picture [478 x 643] intentionally omitted <==**
**----- Start of picture text -----**
16 es 1E+4 a a
V CC Cies
' a a
—- V CC =960V / | Coes a
14 Cres
— y, /| I a ee ee
/ a e e
=a 12 JJs r r
:
1000
i / | | TT
i 10 Q Se
fe)> — } | / WwoO— a ss
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6
: a ee
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-SS
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2
0 10
PEE EE ) EE
0 50 100 150 200 250 0 5 10 15 20 25 30
Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]
Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of
( I C=30A) collector-emitter voltage
( V GE =0V, f=1MHz)
1 1
TT TT ee ee
PT Tn Te PT Tn Te
= a ee ees 2 a ase e
QZ a = ee
WW8 oS Wage aeil D = 0.5 HS im2 FT a eaJas TAIT
0.1 0.1
0.2
Zz Ua y kf
= SSee 2 Serie aes” dite eet eee ett
(On)= =aa| 0.1 LT TTRL =ry aCa7AS D = 0.5 |
it AT 0.05 CM TTT TTT = oe AS 0.2 |
a ZSeet All Ale A 0.02 WEME T TII TTI)EVI 3a a?”Serial): AUA ima 0.1 0HN [|]
0.01 0.05
= 0.01 | ee Ze NT Se 0.01
single pulse 0.02
fe< (enmY A TT fec tnTTTte 0.01 1|
single pulse
E PTT VAT TE TI TT TTS FHI TTMEEFA vgn ca CTTT
By | B pf
2 PON a 2 Lee |
0.001 0.001
Z a ae ° ne ant) Z ie 0 ® _ cn)
- A i Cr=h/R1 Co=te/Ro th - Anp Cr a/R1 Co=fe/Re it)
A | A |
AiA |e i: 1 2 3 4 A ec i: 1 2 3 4
ri[K/W]: 6.5E-3 0.1328125 0.1953125 0.1158854 ri[K/W]: 0.03036972 0.1122227 0.13125 0.1761444
τ i[s]: 9.0E-6 2.1E-4 3.2E-3 0.016711 τ i[s]: 3.6E-5 10.0E-5 2.3E-3 0.03551
1E-4 0 LETT Ti Tr TT TT T 1E-4 0 LETT TTT Ti Tr TT T
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]
C
GE
V
c)th(j- c)th(j-
Z Z
**----- End of picture text -----**
> Figure 19. IGBT ( _D_ = _t_ p/T)
Figure 20.
( _D_ = _t_ p/T)
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Datasheet
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IHW30N120R5
**==> picture [475 x 287] intentionally omitted <==**
**----- Start of picture text -----**
90 ee| 3.5
Tvj = 25°C IF = 15A
Tvj = 175°C IF = 30A
80 EU IF = 60A
Sy 4) FO
3.0
70 ]
. [7]
_
< / _ wen
| \/ = wet
2 60 if uwO Ses 7
2.5
~) 50 / a -"
a>
o
Qe$ 40 4<
= / =a 2.0 —>
30
20
1.5
10
EPARE
0 1.0
0 1 2 3 4 5 25 50 75 100 125 150 175
V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]
I F V F
**----- End of picture text -----**
Figure 21. Typical diode forward current as a function Figure 22.
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Datasheet
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IHW30N120R5
**==> picture [86 x 38] intentionally omitted <==**
## Resonant�Switching�Series
## **Package Drawing PG-TO247-3**
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Datasheet
IHW30N120R5
**==> picture [86 x 38] intentionally omitted <==**
## Resonant�Switching�Series
## **Testing Conditions**
**==> picture [252 x 588] intentionally omitted <==**
**----- Start of picture text -----**
V GE (t)
90% V GE
10% V GE t
I C (t)
90% I C 90% I C
10% I C 10% I C
t
V CE (t)
t
t d(off) t f t d(on) t r
Figure A.
V GE (t)
90% V GE
10% V GE
t
I C (t)
2% I C t
V CE (t)
t 2 t 4
E off [=] V CE x I C x d t E on [=] V CE x I C x d t
t 1 t 3 2% V CE
t
t 1 t 2 t 3 t 4
Figure B.
**----- End of picture text -----**
**==> picture [189 x 170] intentionally omitted <==**
**----- Start of picture text -----**
I,V
dI F /dt Qt rrrr== Qt aa++ tQ b b
a b
Q a Q b
dI
Figure C. Definition of diode switching
characteristics
**----- End of picture text -----**
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**
t
**----- End of picture text -----**
**==> picture [169 x 63] intentionally omitted <==**
Figure D.
**==> picture [7 x 4] intentionally omitted <==**
**----- Start of picture text -----**
CC
**----- End of picture text -----**
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
13
V�2.2 2018-09-18
Datasheet
IHW30N120R5
**==> picture [86 x 38] intentionally omitted <==**
## Resonant�Switching�Series
## **Revision�History**
IHW30N120R5
## **Revision:�2018-09-18,�Rev.�2.2**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2018-04-17|Final Datasheet|
|2.2|2018-09-18|Added thermal network on Fig.19 & 20|
14
V�2.2 2018-09-18
Datasheet
## **Trademarks**
## party.
## **Warnings**
## Links
- [View this product on Novapart](https://novapart.co/products/IHW30N120R5XKSA1/igbt-60-a-155-v-330-w-12-kv-to-247-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ihw30n120r5xksa1/igbt-1-2kv-60a-330w-to-247/dp/2986343)
---
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