# IGBT, 30 A, 1.7 V, 254 W, 1.2 kV, TO-247, 3 Pins
**URL**: https://novapart.co/products/IHW15N120R3FKSA1/igbt-30-a-17-v-254-w-12-kv-to-247-3-pins
**SKU**: IHW15N120R3FKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.1900
**Stock**: 200+
**Lead Time**: 218 days (indicative)
## Description
DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:254W; Collector Emitter Voltage V; Available until stocks are exhausted Alternative available
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 254W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 30A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Saturation Voltage | 1.7V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:1832348/)
IHW15N120R3
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**----- Start of picture text -----**
Features: C
¢ Powerful monolithic body diode with low forward voltage
designed for soft commutation only
* TRENCHSTOP_ technology applications offers:
- very tight parameter distribution
G
- high ruggedness, temperature stable behavior
E
-low V CEsat
- easy parallel switching capability due to positive
temperature coefficient in V CEsat
« Low EMI
* Qualified according to JEDEC for target applications 2
¢ Pb-free lead plating; ROHS compliant a,
* Complete product spectrum and PSpice Models: rp tinegy
http://www.infineon.com/igbt/
Applications:
* Inductive cooking
¢ Inverterized microwave ovens
« Resonant converters G
¢ Soft switching applications C
E
**----- End of picture text -----**
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IHW15N120R3|1200V|15A|1.48V|175°C|H15R1203|PG-TO247-3|
Datasheet www.infineon.com
2018-03-29
IHW15N120R3
**==> picture [86 x 38] intentionally omitted <==**
## Resonant�Switching�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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IHW15N120R3
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## Resonant�Switching�Series
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emitter voltage|_V_CE||1200|V|
|DCcollectorcurrent,limitedby_T_vjmax
_T_c=25°C
_T_c=100°C|_I_C||30.0
15.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||45.0|A|
|Turnoffsafeoperatingarea_V_CE≤1200V,_T_vj≤175°C|-||45.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax
_T_c=25°C
_T_c=100°C|_I_F||30.0
15.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||45.0|A|
|Gate-emitter voltage
TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20
±25|V|
|Powerdissipation_T_c=25°C
Powerdissipation_T_c=100°C|_P_tot||254.0
127.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+175||°C|
|Soldering temperature,
wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw
Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,
junction - case|_R_th(j-c)||-|-|0.59|K/W|
|Diode thermal resistance,
junction - case|_R_th(j-c)||-|-|0.59|K/W|
|Thermal resistance
junction - ambient|_R_th(j-a)||-|-|40|K/W|
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## Resonant�Switching�Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=15.0A
_T_vj=25°C
_T_vj=125°C
_T_vj=175°C|-
-
-|1.48
1.70
1.80|1.70
-
-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=15.0A
_T_vj=25°C
_T_vj=125°C
_T_vj=175°C|-
-
-|1.55
1.70
1.80|1.75
-
-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|5.1|5.8|6.4|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V
_T_vj=25°C
_T_vj=175°C|-
-|-
-|100
2500|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=15.0A|-|13.9|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1165|-|pF|
|Output capacitance|_C_oes||-|40|-||
|Reverse transfer capacitance|_C_res||-|32|-||
|Gate charge|_Q_G|_V_CC=960V,_I_C=15.0A,
_V_GE=15V|-|165.0|-|nC|
|Internal emitter inductance
measured 5mm (0.197 in.) from
case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=25°C,
_V_CC=600V,_I_C=15.0A,
_V_GE=0.0/15.0V,
_R_G(on)=14.6Ω,_R_G(off)=14.6Ω,
_L_σ=180nH,_C_σ=39pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|300|-|ns|
|Fall time|_t_f||-|46|-|ns|
|Turn-off energy|_E_off||-|0.70|-|mJ|
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IHW15N120R3
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## Resonant�Switching�Series
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=175°C,
_V_CC=600V,_I_C=15.0A,
_V_GE=0.0/15.0V,
_R_G(on)=14.6Ω,_R_G(off)=14.6Ω,
_L_σ=180nH,_C_σ=39pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|370|-|ns|
|Fall time|_t_f||-|90|-|ns|
|Turn-off energy|_E_off||-|1.25|-|mJ|
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IHW15N120R3
**==> picture [516 x 642] intentionally omitted <==**
**----- Start of picture text -----**
50 100
a
pt TT
40 \) | }HL| oon ht Te NT|
tp=1µs
: n EAL TIS eet ONE IMIE
SE aixsailll@n
10 20µs
TC=80°
a \ a JNT
ne 30 NS ne = 50µs TRS
o TC=110° NY o i
=) Se
5) | =)
200µs
oe ‘ \ 5) ENN SCAT
: oe = 1ms ETT
Ni 8 TIS ATT
20
10ms
| NC 1 CORCORAN
- oO po DC RN
ic - ahSSSES NN
eeeeNT
oO OTN\ ||| | = =— ee
10
CHIE VANiN\ A PT C TTTITnCTET A E NNTTT TT
0 0.1
1 10 100 1000 1 10 100 1000
f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]
Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area
frequency ( D =0, T C =25°C, T j 175°C; V GE=15V)
( T j ≤ 175°C, D =0.5, V CE =600V, V GE=15/0V,
R G=14,6 Ω )
300 40
250
30
200
- in
3 aN Z |
2 150 \ 20
a
a\
O 100 \ 5
10
LEEELLEN\EE
50
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]
I C I C
P tot I C
**----- End of picture text -----**
> Figure 3. Power **temperature** ( _T_ j ≤ 175°C)
Figure 4. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ j ≤ 175°C)
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**----- Start of picture text -----**
45 45
VGE=20V SS a VGE=20V | WW,
17V 17V
15V 15V
30 13V 30 13V
nm nm
11V 11V
oO 9V oO 9V
7V 7V
5V 5V
15 15
BENG (at EEN 7am
ee) NN eee) Ae
0 0
0 1 2 3 0 1 2 3 4
V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]
Figure 5. Typical output characteristic Figure 6. Typical output characteristic
( T j=25°C) ( T j=175°C)
45 3.0
Tvj=25°C IC=7.5A
a Tvj=175°C |I | [ IC=15A ee Fe
| S.= |ee ees IC=30A PoA
5 ee ee ee ee ee ea
E e e
2.5 a
< a i Pa ee eees
Eit 30 po ><2 eeee|) eeee|aee ee
=) WW ee ee ee ee ee ee
y | = 2.0 ee ee ee ee
O5 = aeee ee
2 a pewee| |
aO 15 O4 eeeeee eeeee
1.5
Pf | o) Peaee
/ ° nee A
/ PPeeaseeeee
0 ae- s 1.0 eeeeee
2 4 6 8 10 12 0 25 50 75 100 125 150 175
V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]
Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter saturation voltage
( V CE=20V) a function of junction temperature
I C I C
I C
CE(sat)
V
**----- End of picture text -----**
( _V_ GE=15V)
Datasheet
7
2018-03-29
IHW15N120R3
**==> picture [471 x 331] intentionally omitted <==**
**----- Start of picture text -----**
1000 a 1000 a a
pT td(off) re ee ee ee | td(off) re
— ee ee
tf tf
Po a ee I (0 ee eeee ee
a a ee
i eeee ooeee a ae eee
ee
5 5
7p) 7p)
>>
FF
oO 100 a a oO 100 a
Oo a ae ee a ee
i a a es ee po
= po = a ee ee
a Re eC
Peery) fee
10 10
0 5 10 15 20 25 30 10 20 30 40 50
I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]
Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of
collector current resistance
(ind. load, T j =175°C, V CE =600V, V GE=0/15V,=0/15V, (ind. load, T j =175°C, V CE =600V, V GE=0/15V,
R =14,6 Ω ; R =14,6 Ω , test circuit in I C =15A, test circuit in Fig. E)
t t
**----- End of picture text -----**
(ind. load, _T_ j =175°C, _V_ CE =600V, _V_ GE=0/15V,=0/15V, _R_ G(on)=14,6 Ω ; _R_ G(off)=14,6 Ω , test circuit in Fig. E)
**==> picture [474 x 286] intentionally omitted <==**
**----- Start of picture text -----**
1000 a 7
I td(off) typ.
tf min.
Jae po a
| a ee ee ee ee ee ~A max.
p o mS
Lref p Oee ee > 6 aoe AL
TE kN
5
th fe) N — ™ _e.
g 100 a a = a
=O aa aee eeeeee eeeeeee 4 INN
Ee a a ee ee ee ee = .
= Eaee ee eee ~
ee Ce eees NC
a eeee \
3
10 2
25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]
t
GE(th)
V
**----- End of picture text -----**
Figure 11.
**==> picture [166 x 29] intentionally omitted <==**
**----- Start of picture text -----**
(ind. load, V CE =600V, V GE =0/15V, I C=15A,
R G(on)=14,6 Ω ; R G(off)=14,6 Ω , test circuit in
Fig. E)
**----- End of picture text -----**
Figure 12.
( _I_ C=0.4mA)
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IHW15N120R3
**==> picture [490 x 331] intentionally omitted <==**
**----- Start of picture text -----**
2.5 1.6
Eoff Eoff
1.5
2.0
on on
Ww Ww
7) 7) 1.4 Z|
oo
1.5
>
1.3
Ww Ww
WwZz ayJ.4an Zz>Ww |
1.0
OO 1.2
EE
nn
=r J =r
0.5
1.1
0.0 1.0
0 5 10 15 20 25 30 10 20 30 40 50
I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]
Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a
function of collector current function of gate resistance
(ind. load, T j =175°C, V CE =600V, V GE=0/15V,=0/15V, (ind. load, T j =175°C, V CE =600V, V GE=0/15V,
R =14,6 Ω ; R =14,6 Ω , test circuit in I C =15A, test circuit in Fig. E)
E E
**----- End of picture text -----**
(ind. load, _T_ j =175°C, _V_ CE =600V, _V_ GE=0/15V,=0/15V, _R_ G(on)=14,6 Ω ; _R_ G(off)=14,6 Ω , test circuit in Fig. E)
**==> picture [489 x 286] intentionally omitted <==**
**----- Start of picture text -----**
1.3 2.0
Eoff Eoff
5 1.2 5 1.8 ye
1.1 1.6 a
—! —!
>>: 1.0 VA : 1.4 4
®2 7 : V4
WwoO 0.9 VA Ww2 1.2 LZ
Zz / ZzoO y
OO
EE vA
0.8 1.0
Y
0.7 0.8
0.6 0.6
25 50 75 100 125 150 175 400 500 600 700 800 900 1000
T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]
E E
**----- End of picture text -----**
Figure 15.
**==> picture [164 x 29] intentionally omitted <==**
**----- Start of picture text -----**
(ind load, V CE =600V, V GE =0/15V, I C=15A,
R G(on)=14,6 Ω ; R G(off)=14,6 Ω , test circuit in
Fig. E)
**----- End of picture text -----**
Figure 16.
**==> picture [163 x 29] intentionally omitted <==**
**----- Start of picture text -----**
(ind. load, T j =175°C, V GE =0/15V, I C=15A,
R G(on)=14,6 Ω ; R G(off)=14,6 Ω , test circuit in
Fig. E)
**----- End of picture text -----**
9
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IHW15N120R3
**==> picture [474 x 679] intentionally omitted <==**
**----- Start of picture text -----**
1.4 16
Tvj=25°C 240V
Tvj=175°C 960V
f= = |
1.2 ree || nettane/ 14 Ed | Vy7
12
op)- 1.0 | | tiTEVA AT= /:
oOBa 1Ti| Vv/ o | = /
ee 0.8 ee /
e ls 8 /
a | | aOE) |
i ee
0.6
oO / =
6
2 aVi Ww
BP 0.4 | ti LA
4
en ee
0.2 Poemee [Et] att Ann 2 |
0.0 HT LUE ET 0
100 1000 1E+4 0 25 50 75 100 125 150 175
dv/dt , VOLTAGE SLOPE [V/us] Q GE , GATE CHARGE [nC]
Figure 17. Typical turn off switching energy loss for Figure 18. Typical gate charge
soft switching ( I C=15A)
(indload, V CE =600V, V GE =15/0V, I C=15A,
R G=14,6 , test circuit in Fig. E)
1 TT Ee
|
| a ee PT | TT |
i LM
es PT ec
1000 es ee Ss UT UT E emZani IE
D=0.5
a Y
Cies 0.2
Coes 0.1
LL | ee Cres | | wu 0.1 ae’ — el Coo
0.05
B f Oe
Wu = Al a
oO 7 | 0.02 A|
22e i eoFOa Aetra ea Pail 0.01single pulse 1
100
a ay Il
a es 0010
a es ns ee 0.01 Crooo|
eeTS — (dp) || |
Po SLee MN2 / ReTolTI
aee iee=== es= w° ED)PACMCE|IT COMPT| ee | et oIti)il
PL ANIM EAM LUI ETI LAUT A
i: 1 2 3 4 5 6 7
ri[K/W]: 4.6E-3 0.1431 0.2097 0.2185 0.01204762 1.9E-3 2.1E-4
τ i[s]: 2.4E-5 3.3E-4 3.1E-3 0.01636424 0.1753518 1.713276 4.662402
10 0.001
0 10 20 30 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]
Figure 19. Typical capacitance as a function of Figure 20. IGBT transient thermal impedance
collector-emitter voltage ( D = t p/T)
( V GE =0V, f=1MHz)
GE
V
E
C
thJC
Z
**----- End of picture text -----**
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**==> picture [254 x 286] intentionally omitted <==**
**----- Start of picture text -----**
1 | |
| | | |
EHHPET TTEHH EHHeerPt
_ ee
(a
re D=0.5
0.2
P 0.1
fa 0.1 econ 2A Ll
Lua QcSeer eee eh 0.05 HH li Ww
= | CT w
_ ee lll 0.02 | w5
0.01
Zz See) eal a 5
Sera ere single pulse ITH 8
: SN ll a
BL
0.01
a ECeeeEC tt} ee
2 STH HH i
s a) | | —- Hil
FE PTA TT ||
ee 0 0
i: 1 2 3 4 5 6 7
r PIM i[K/W]: 4.6E-3 0.1431 UTI 0.2097 CT 0.2185 VI) 0.012 1.9E-3 EPI 2.1E-4 LET
τ i[s]: 2.4E-5 3.3E-4 3.1E-3 0.01636424 0.1753518 1.713276 4.662402
0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
t p , PULSE WIDTH [s]
I F
thJC
Z
**----- End of picture text -----**
**==> picture [240 x 285] intentionally omitted <==**
**----- Start of picture text -----**
45 |
Ee] TTvjvj=25°C=175°C Fy// |
/
|
e
— 30
li /
Ww
w /
w5
8 aaa
a
15
ee LA/
/
PL
7
0
0 1 2 3
V F , FORWARD VOLTAGE [V]
I F
**----- End of picture text -----**
Figure 21.
Figure 22.
( _D_ = _t_ p/T)
**==> picture [233 x 286] intentionally omitted <==**
**----- Start of picture text -----**
2.5
IF=7.5A
IF=15A
IF=30A
|
2.0
) oer
= [_]
>
Q
& aa _—
= 4-7
~ _ _
(oe) _ _ _—
1.5
1.0
0 25 50 75 100 125 150 175
T j , JUNCTION TEMPERATURE [°C]
F
V
**----- End of picture text -----**
Figure 23.
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## Resonant�Switching�Series
## **Package Drawing PG-TO247-3**
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## Resonant�Switching�Series
## **Testing Conditions**
**==> picture [252 x 588] intentionally omitted <==**
**----- Start of picture text -----**
V GE (t)
90% V GE
10% V GE t
I C (t)
90% I C 90% I C
10% I C 10% I C
t
V CE (t)
t
t d(off) t f t d(on) t r
Figure A.
V GE (t)
90% V GE
10% V GE
t
I C (t)
2% I C t
V CE (t)
t 2 t 4
E off [=] V CE x I C x d t E on [=] V CE x I C x d t
t 1 t 3 2% V CE
t
t 1 t 2 t 3 t 4
Figure B.
**----- End of picture text -----**
**==> picture [189 x 170] intentionally omitted <==**
**----- Start of picture text -----**
I,V
dI F /dt Qt rrrr== Qt aa++ tQ b b
a b
Q a Q b
dI
Figure C. Definition of diode switching
characteristics
**----- End of picture text -----**
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**
t
**----- End of picture text -----**
**==> picture [169 x 63] intentionally omitted <==**
Figure D.
**==> picture [7 x 4] intentionally omitted <==**
**----- Start of picture text -----**
CC
**----- End of picture text -----**
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
13
V�2.5 2018-03-29
Datasheet
IHW15N120R3
**==> picture [86 x 38] intentionally omitted <==**
## Resonant�Switching�Series
## **Revision�History**
IHW15N120R3
## **Revision:�2018-03-29,�Rev.�2.5**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.1|2009-04-01|-|
|2.1|2009-05-27|-|
|2.2|2011-04-05|Pack. draw. rev. 05, markingupdate|
|2.3|2013-02-12|Layout change|
|2.4|2015-01-26|Minor changes|
|2.5|2018-03-29|Fig.12 and Fig.17 minor change of legend|
14
V�2.5 2018-03-29
Datasheet
## **Trademarks**
## party.
## **Warnings**
## Links
- [View this product on Novapart](https://novapart.co/products/IHW15N120R3FKSA1/igbt-30-a-17-v-254-w-12-kv-to-247-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ihw15n120r3fksa1/igbt-diode-1200v-15a-to247/dp/1832348)
---
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