# IGBT, 120 A, 1.65 V, 395 W, 650 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2781022/)

**URL**: https://novapart.co/products/IGW75N65H5XKSA1/igbt-120-a-165-v-395-w-650-to-247-3-pins
**SKU**: IGW75N65H5XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.1300
**Stock**: 200+
**Lead Time**: 260 days (indicative)

## Description

DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pi

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 |
| Power Dissipation | 395W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 120A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.65V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781022/)

IGW75N65H5 

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High speed 5 IGBT in TRENCHSTOP TM _ 5 technology<br>Features and Benefits: C<br>High speed H5d technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>* 650V breakdown voltage G<br>«Low Q G E<br>* Maximum junction temperature 175°C<br>* Qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant<br>*« Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/ ><br>Applications:<br>;<br>¢ Uninterruptible power supplies<br>* Solar converters y<br>* Welding converters i '<br>* Mid to high range switching frequency converters<br>Package pin definition:<br>1<br>2<br>3<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IGW75N65H5|650V|75A|1.65V|175°C|G75EH5|PG-TO247-3|



Datasheet www.infineon.com 

2017-07-27 

IGW75N65H5 

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## High�speed�series�fifth�generation 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 

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## High�speed�series�fifth�generation 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_C||120.0<br>75.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||300.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||300.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||395.0<br>198.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw, PG-TO247-pin123<br>Maximum of mounting processes: 3|_M_||0.6|Nm|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-C)||-|-|0.38|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=75.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.75mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|0<br>800|75<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=75.0A|-|104.0|-|S|



1) Defined by design. Not subject to production test. 

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## High�speed�series�fifth�generation 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|3800|-|pF|
|Output capacitance|_C_oes||-|80|-||
|Reverse transfer capacitance|_C_res||-|17|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=75.0A,<br>_V_GE=15V|-|160.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.0Ω,_R_G(off)=8.0Ω,<br>_L_σ=30nH,_C_σ=25pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery. Diode<br>from IKW75N65EH5.|-|28|-|ns|
|Rise time|_t_r||-|33|-|ns|
|Turn-off delaytime|_t_d(off)||-|174|-|ns|
|Fall time|_t_f||-|41|-|ns|
|Turn-on energy|_E_on||-|2.25|-|mJ|
|Turn-off energy|_E_off||-|0.95|-|mJ|
|Total switchingenergy|_E_ts||-|3.20|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=37.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.0Ω,_R_G(off)=8.0Ω,<br>_L_σ=30nH,_C_σ=25pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery. Diode<br>from IKW75N65EH5.|-|25|-|ns|
|Rise time|_t_r||-|14|-|ns|
|Turn-off delaytime|_t_d(off)||-|178|-|ns|
|Fall time|_t_f||-|18|-|ns|
|Turn-on energy|_E_on||-|0.90|-|mJ|
|Turn-off energy|_E_off||-|0.30|-|mJ|
|Total switchingenergy|_E_ts||-|1.20|-|mJ|



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## High�speed�series�fifth�generation 

## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.0Ω,_R_G(off)=8.0Ω,<br>_L_σ=30nH,_C_σ=25pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery. Diode<br>from IKW75N65EH5.|-|27|-|ns|
|Rise time|_t_r||-|34|-|ns|
|Turn-off delaytime|_t_d(off)||-|194|-|ns|
|Fall time|_t_f||-|38|-|ns|
|Turn-on energy|_E_on||-|3.00|-|mJ|
|Turn-off energy|_E_off||-|1.00|-|mJ|
|Total switchingenergy|_E_ts||-|4.00|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=37.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=8.0Ω,_R_G(off)=8.0Ω,<br>_L_σ=30nH,_C_σ=25pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery. Diode<br>from IKW75N65EH5.|-|25|-|ns|
|Rise time|_t_r||-|16|-|ns|
|Turn-off delaytime|_t_d(off)||-|207|-|ns|
|Fall time|_t_f||-|14|-|ns|
|Turn-on energy|_E_on||-|1.80|-|mJ|
|Turn-off energy|_E_off||-|0.40|-|mJ|
|Total switchingenergy|_E_ts||-|2.20|-|mJ|



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**----- Start of picture text -----**<br>
400<br>|<br>ere<br>er K 350 A] ff<br>100<br>af 300 PN<br>nm O 250 \<br>e eet cite | | NL |<br>10<br>en<br>PCN<br>5O aSS 200150 Pf | AQ<br>: PL LT TTT EIN \<br>1<br>100<br>S MT | EP<br>e ee eeoeel 50 Pf | | tN\ |<br>not for linear use<br>0.1 [mi mmio 0 PPT Py XN<br>TT |<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C, V GE =15V, t p=1µs, temperature<br>I Cmax defined by design - not subject to ( T vj ≤ 175°C)<br>production test)<br>120 300<br>VGE = 20V<br>270 18V FSS<br>NOL) /<br>100 S eee 15V oe<br>240<br>12V<br>210<br>= ‘ ifaos 10V /annn<br>80 \ S Hl =<br>8V<br>180<br>7V<br>SRRNGE) Guess oc<br>60 150<br>: BLL 120 6V4V ANY?<br>40<br>EN TE NS<br>90<br>: v8 LL AYIA<br>60<br>pA} EEG IRE<br>20<br>30<br>PEE ALARPXE<br>0 0<br>25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>


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300 300<br>VGE = 19V Tvj = 25°C<br>270 17V ST / 270 | Tvj = 150°C<br>a | | tt a<br>15V<br>240 EES4 240<br>| YA<br>12V<br>ef) 210 ot y/74sse 210 LEE ie<br>10V<br>Zzx= = ttl x=Zz<br>: 7V t/a<br>180 180<br>z a PW z<br>7V<br>e | SAI ae fF)<br>© 150 SN =| 2 150<br>° 6V NIN ° }<br>120 5V 120<br>| ANB<br>O 90 L e F 90<br>ELS | 0 /<br>60 WX iN 60<br>BERD 2<a0 ne ee eee eee<br>30 BEDV ANNE EES 30 ee /eee<br>ANAA | | Nt| »Wi,<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 3 4 5 6 7 8 9 10<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>


Figure 5. Typical ( _T_ vj=150°C) 

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**----- Start of picture text -----**<br>
Figure 6. Typical<br>( V CE=20V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
3.5 — 1000<br>IC = 37.5A a Ssa<br>IC = 75A a a seee ee ee<br>IC = 150A<br>_ = | aa<br>3.0<br>= a = pt TT es ee<br>6: P| ~AC - pittEERE| | tT |<br>= 2.5 ra : 100 =<br>s ue" “7 q— £i ia ee ee es ee es ee<br>o — = a ee a ee eee<br>tut - ee ee a ee ee ee<br>2.0<br>E — Q pf | ef | aa<br>fi ep to Looe<br>f<br>Bp5a 1.5 pt2 10 ————<br>5O. aa ea eeeee ee ee<br>1.0<br>td(off)<br>tf<br>td(on)<br>tr<br>aaa = fp=<br>0.5 1<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 200 225<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 7. Typical collector-emitter saturation voltage as Figure 8. Typical switching times as a function of<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>


Figure 7. Typical a function ( _V_ GE=15V) 

(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _R_ G(on)=8 Ω , _R_ G(off)=8 Ω , test circuit in Figure E) 

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**----- Start of picture text -----**<br>
1000<br>td(off) aa esaee<br>tf<br>1000 E td(on) ] a<br>H tr pf} |__| __| Tf a<br>H a ee a ee po<br>es a ee ee eeee<br>po ——<br>100<br>= Poy eeee<br>Lu im a a<br>ee= = ————a ee<br>F + - ns<br>© _ OQ peosevoeneapecnenserrors perreerrenef sete cnenfape<br>oO 100 po eT oO<br>E a a a<br>ee e e eee<br>a a a as ee e 10<br>- Poets | TT 7 aa<br>a<br>a; -<br>td(off)<br>tf<br>td(on)<br>tr<br>10 1<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>t t<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistance junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=0/15V,<br>V GE =0/15V, I C =75A, dynamic test circuit in I C =75A, R G(on)=8 Ω ; R G(off)=8 Ω , dynamic test<br>Figure E) circuit in Figure E)<br>6.0 20<br>typ. Eoff<br>5.5 min. 18 Eon<br>max. Ets<br>=. = = /<br>WW /<br>5.0 16<br>x4 = -<br>aO Sse £ //<br>= 4.5 Toye ~~ oOa) 14 / /<br>; 4.0 : S 12<br>5 ~SL > ‘ .<br>we 3.5 |——~ a “Ss 25o 10 / / Zzy,<br>ee ee ee<br>fFa 3.0 —™= e2 8 Va<br>E ~SAL ™ = /\ 47<br>th 2.5 ~~ | 8 6 ‘ols<br>A S _~ = V f<br>O). 2.0 ee~ N a; 4 4 LZ<br>Ane<br>1.5 2<br>ee 2 a [ Z|<br>1.0 0<br>25 50 75 100 125 150 0 25 50 75 100 125 150 175 200 225<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 11. Gate-emitter of junction ( _I_ C=0.75mA) 

Figure 12. 

(inductive load, _T_ vj =150°C, _V_ CE=400V, _V_ GE =0/15V, _R_ G(on)=8 Ω , _R_ G(off)=8 Ω , test circuit in Figure E) 

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**----- Start of picture text -----**<br>
15 5.0<br>14 Eoff Eoff<br>Eon 4.5 Eon<br>Ets Ets<br>13 a<br>oe 12 | en 4.0 EE<br>A 11 ee ee a<br>3.5<br>ee  ee 10<br>By 9 3.0 ao<br>ee 8  eke<br>ee ee<br>2.5<br>7<br>ae 6 ee 2.0<br>5<br>| 4g Pe<br>1.5<br>4<br>FE L4UT _<br>3 1.0<br>i ae<br>2<br>Teeter Py<br>0.5<br>1<br>Pett | tt | re<br>0 Pot | | 0.0<br>5 15 25 35 45 55 65 75 85 25 50 75 100 125 150 175<br>R G , GATE RESISTANCE [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses asa Figure 14. Typical switching energy losses as a<br>function of gate resistance function of junction temperature<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=0/15V,<br>V GE =0/15V, I C =75A, dynamictest circuit in I C =75A, R G(on)=8 Ω ; R G(off)=8 Ω , dynamic test<br>Figure E) circuit in Figure E)<br>5.5 Ld 16 es<br>Eoff VCE = 130V<br>5.0 Eon VCE = 520V<br>E Ets RT! a 14 Ea a VA<br>4.5<br>“<br>ry oe TT T  TA<br>12<br>21] 4.0 | ||be |).<br>Pere C 3.5 ; 10 PA<br>,<br>3.0<br>ra Pee es a<br>8<br>nD “ 7 th /<br>2.5<br>S Zane ae: |<br>2 2.0 Le P 6 LY TT<br>tle lb | || & Lee<br>errs= 1.5 ~ PP|| Py<br>4<br>1.0<br>» FEE 2 UC<br>0.5<br>Pee PEE<br>0.0 0<br>200 250 300 350 400 450 500 0 20 40 60 80 100 120 140 160 180<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q G , GATE CHARGE [nC]<br>E E<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>


Figure 15. 

Figure 16. Typical ( _I_ C=75A) 

(inductive load, _T_ vj =150°C, _V_ GE=0/15V, _I_ C =75A, _R_ G(on)=8 Ω ; _R_ G(off)=8 Ω , dynamic circuit in Figure E) 

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**----- Start of picture text -----**<br>
1E+4 CCiesoes A AR A<br>Cres<br>== RE<br>fo Se LUI ILIl<br>f p] Te |<br>a SeOe SSe Ss 0.1 UMMAEe D = 0.50.2 ll<br>ee ee rc) ll “a TT<br>c 7a 7SS a 0.1 mniil|<br>0.05<br>to} 1000<br>S | | =|e iee) a an 0.02<br>os a FO LArava| Ly TT<br>Z | 0.01<br>E SaA0 S$ PheI yt single pulse |<br>o we Bee i<br>py a oi<br>~¢ 1 N,<br>eS |<br>0.01<br>O \ ‘~ ~ 5 AM<br>° 100 \ ss,~~ uw77} eeY|Aee ||<br>a ce Sci til sat Rg<br>Js —_|-_|_____ . AH/| bp 4 Cr=1;/Ry| Co=te/Ro |<br>aa YAN i: 1 2 3 4 5 6<br>ri[K/W]: 0.010336 0.078242 0.081139 0.196217 0.015938 1.8E-3<br>τ i[s]: 2.8E-5 2.3E-4 2.3E-3 0.013145 0.113481 1.869237<br>10 0.001<br>0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal impedance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=1MHz)<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>


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Datasheet 

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IGW75N65H5 

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## High�speed�series�fifth�generation 

## **Package Drawing PG-TO247-3** 

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IGW75N65H5 

**==> picture [86 x 38] intentionally omitted <==**

## High�speed�series�fifth�generation 

## **Testing Conditions** 

**==> picture [252 x 588] intentionally omitted <==**

**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


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t<br>**----- End of picture text -----**<br>


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Figure D. 

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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

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IGW75N65H5 

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## High�speed�series�fifth�generation 

## **Revision�History** 

IGW75N65H5 

## **Revision:�2017-07-27,�Rev.�2.2** 

## Previous Revision 

|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2015-05-20|Final data sheet|
|2.2|2017-07-27|Correction Fig. 1|



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Datasheet 

## **Trademarks** 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/IGW75N65H5XKSA1/igbt-120-a-165-v-395-w-650-to-247-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/igw75n65h5xksa1/igbt-single-650v-120a-to-247/dp/2781022)
---

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