# IGBT, 53 A, 1.6 V, 200 W, 600 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:2781019/)

**URL**: https://novapart.co/products/IGW30N60TPXKSA1/igbt-53-a-16-v-200-w-600-to-247-3-pins
**SKU**: IGW30N60TPXKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.7600
**Stock**: 500+
**Lead Time**: 260 days (indicative)

## Description

DC Collector Current:53A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP |
| Power Dissipation | 200W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 53A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781019/)

## IGBT 

TRENCHSTOP[TM] erformance 

## IGW30N60TP 

> TM P erformance 

IGW30N60TP 

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TRENCHSTOP [TM] P erformance<br>**----- End of picture text -----**<br>


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Features: C<br>TRENCHSTOP [TM] technology offering<br>* very low V CEsat<br>+ low turn-off losses<br>¢ short tail current<br>* low EMI G<br>* maximum junction temperature 175°C E<br>* qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant<br>* complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>e<br>Applications:<br>* drives hag, ON<br>* solar inverters<br>* uninterruptible power supplies yr<br>* converters with medium switching frequency "<br>G<br>C<br>E<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IGW30N60TP|600V|30A|1.6V|175°C|G30DTP|PG-TO247-3|



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## TRENCHSTOP[TM] �P erformance �Series 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 

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## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||53.0<br>38.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||90.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs1)|-||90.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||200.0<br>100.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|0.50|0.75|K/W|



1) Defined by design. Not subject to production test. 

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## TRENCHSTOP[TM] �P erformance �Series 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=2.00mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.60<br>1.94|1.80<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.48mA,_V_CE=_V_GE|4.1|5.1|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|26.0|-|S|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1050|-|pF|
|Output capacitance|_C_oes||-|45|-||
|Reverse transfer capacitance|_C_res||-|36|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=30.0A,<br>_V_GE=15V|-|130.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|137|-|A|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.5Ω,_R_G(off)=10.5Ω,<br>_L_σ=32nH,_C_σ=60pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode (IKW30N60DTP) reverse<br>recovery.|-|15|-|ns|
|Rise time|_t_r||-|21|-|ns|
|Turn-off delaytime|_t_d(off)||-|179|-|ns|
|Fall time|_t_f||-|12|-|ns|
|Turn-on energy|_E_on||-|0.71|-|mJ|
|Turn-off energy|_E_off||-|0.42|-|mJ|
|Total switchingenergy|_E_ts||-|1.13|-|mJ|



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## TRENCHSTOP[TM] �P erformance �Series 

## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.5Ω,_R_G(off)=10.5Ω,<br>_L_σ=32nH,_C_σ=60pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode (IKW30N60DTP) reverse<br>recovery.|-|15|-|ns|
|Rise time|_t_r||-|23|-|ns|
|Turn-off delaytime|_t_d(off)||-|220|-|ns|
|Fall time|_t_f||-|59|-|ns|
|Turn-on energy|_E_on||-|0.99|-|mJ|
|Turn-off energy|_E_off||-|0.74|-|mJ|
|Total switchingenergy|_E_ts||-|1.73|-|mJ|



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250<br>100<br>ee 200<br>_ a ee ee _<br>x PT et =<br>DC<br>6 LUM AE bet Ct Z<br>150<br>a -<x<br>=) 10 ee Oo<br>O et ee et te]<br>ad ed<br>e) YT TT TTT ra)<br>BH |<br>eg eR 100<br>OQ8. 1 UIeeLIM LIM TUNEee eee| &.<br>PE et<br>to<br>50<br>a ee eeeee<br>a<br>0.1 0<br>0.1 1 10 100 1000 25 50 75 100 125 150 175<br>V CE ,COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T j 175°C; V GE=15V) temperature<br>( T j ≤ 175°C)<br>75 90<br>80 VGE=20V<br>15V<br>70 KA<br><< 13V<br>a<br>50 60 11V<br>a : Wa<br>9V<br>ia NN if \ \Y |<br>EE 50 SQ<br>) ) \ Y<br>PPS ia 7V<br>g S| 40 \\NW/<br>O g \ ND<br>ut O \// \/<br>e 25 \ ute 30 \ LX/) —<br>20<br>: NG ee ee<br>10<br>fp \<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>


Figure 3. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ j ≤ 175°C) 

Figure 4. Typical ( _T_ j=25°C) 

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90 60<br>Tj=25°C<br>Tj=175°C<br>80 VGE=20V lL |<br>15V<br>S\ Y/Y)/ fo ) lf||<br>70<br>Na [2] 45 i<br>13V<br>Zz=E 60 11V 5 \ /7 Va Zz=E /<br>9V<br>£S| 50 \ N —| & /<br>7V<br>30<br>aOu 40 YYNOYYY oOaIu || { |<br>2 30 IX<> a<br>) NX [_— Ss)<br>15<br>ee 20<br>10 nyYY  ANYXLe ee _ eee<br>PaATTL =a<br>0 0<br>0 1 2 3 4 5 0 2 4 6 8 10<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T j=175°C) ( V CE=20V)<br>3.5<br>IC=19A<br>IC=38A<br>IC=76A<br>== p e | | | tf tT tT e ft ft ft ft ft<br>PST P td(off) E<br>3.0<br>Ee: LspM 100 ttfd(on)<br>=)eE { ||oF eT a De a tr EEEee ee a<br>pf Uo s e d<br>| PR B S SSeS<br>2.5<br><< uw e e eee<br>Peete pee<br>WWa =9 {i} i} |deer}|<br>°2 2.0 =} eee<br>ae -—— 10 a ee eee<br>Lu2.a—_—— 2) --—-----———ee<br>5Le ee<br>O eeeee ee<br>fr 1.5 i<br>1.0 1<br>25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 45 50 55 60 65<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>I C I C<br>t<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>


Figure 7. Typical a function ( _V_ GE=15V) 

Figure 8. 

_T_ j =175°C, _V_ CE =400V, _V_ GE=15/0V, 

_r_ G=10.5 

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1000 a<br>I td(off) ee td(off)<br>tf tf<br>(eeI td(on) oe ee ee eeeeee ( ee td(on)<br>1 eee<br>tr po | tr<br>e PP | eere — ee ooo<br>a e e<br>ty ty 100 a es<br>=eo 100 foe gp= a eeee<br>ee<br>rs) a a ee<br>Pe foyeree =><br>ry eB fT<br>Bs fT<br>O fo] | [es | bey @ A<br>Pee tet<br>a 4<br>Za<br>p ert “an<br>10 10<br>0 10 20 30 40 50 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(ind. load, T j =175°C, V CE  =400V, V GE=15/0V, (ind. load, V CE =400V, V GE =15/0V, I C=30A,<br>I C =30A, test circuit in Fig. E) r G=10.5 , test circuit in Fig. E)<br>6.0 5<br>typ. Eoff<br>min. Eon<br>max. Ets<br>5.0<br>O i ~~ >= /<br>4<br>a1 4.0 = ~~ ‘SN a /<br>: ~~ SY 8 3 é<br>Op) > > /<br>WW ~ O / /<br>a ~ o~ / /<br>rc 3.0 Lu 7<br>- ~ Z / /<br>or ~ i /<br>imF—= 2.0 N N (o)Zz 2 7 v “4<br>uy 5 y<br>imwi == 774 7<br>5 % 1 aaa<br>1.0<br>0.0 0<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t t<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 11. Gate-emitter of junction ( _I_ C=0,48mA) 

Figure 12. 

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**----- Start of picture text -----**<br>
T j =175°C, V CE =400V, V GE=15/0V,<br>**----- End of picture text -----**<br>


_r_ G=10.5 

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## TRENCHSTOP[TM] P erformance 

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4 2.0<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>> “ > ae<br>& 7 & ae<br>3 1.5<br>uw y uw oa<br>7) “ 7) --<br>fe)o Z Y fe)o ce _-<br>aa L a Le<br>2 a“ 5 ao<br>Zz 2 ai a“ Zz 1.0 abo<br>Ww _ a =a Ww _ _—<br>Y) ~ a Yo) aa<br>Zz z -—<br>Pes= 1 a7 LL aaa et= 0.5 esaa<br>0 0.0<br>0 10 20 30 40 50 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(ind. load, T j =175°C, V CE =400V, V GE=15/0V, (indload, V CE =400V, V GE =15/0V, I C=30A,<br>I C =30A, test circuit in Fig. E) r G=10.5 , test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
3.0 16<br>Eoff 120V<br>Eon 480V<br>Ets 14 L<br>a Ed ) ly,<br>2 2.5 “ce /<br>E 7<br>a“ S 12 Lf<br>aS : eT |AZ<br>2.0<br>rs) ? K 10<br>aa] ae 7<br>uwa 1.5 va “| 6 8 ; |<br>Zz > =<br>WwW oe = i<br>ane“ < = rf=<br>6<br>: 1.0 7 | 4<br>ee S<br>0.5<br>2<br>0.0 0<br>300 350 400 450 500 550 600 0 25 50 75 100 125 150<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical gate charge<br>function of collector emitter voltage ( I C=30A)<br>(ind. load, T j =175°C, V GE =15/0V, I C=30A,<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 15. Typical<br>function<br>(ind.<br>r G=10.5<br>**----- End of picture text -----**<br>


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IGW30N60TP 

## TRENCHSTOP[TM] P erformance 

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**----- Start of picture text -----**<br>
250<br>a<br>ee<br>ee ee AX4<br>200<br>1000<br>Cies<br>Coes<br>s| e s  nano redile<br>Cres<br>Asee E( FS| | re) 150 LETZL4<br>a Wy<br>efE |T d fe) aaA<br>a \ 5 va<br><PRs 100 iw 5 100 Ce<br>ae a O<br>oe<br>50<br>a esen ed n eee<br>10 0<br>0 10 20 30 12 13 14 15 16 17 18 19 20<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical capacitance as a function of Figure 18. Typical short circuit collector current as a<br>collector-emitter voltage function of gate-emitter voltage<br>( V GE =0V, f=1MHz) ( V CE 400V, start at T j=25°C)<br>C<br>I C(SC)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
16<br>ee ee Set sett sett ae a<br>TM Tem<br>INESEN 14 TE} tt es satire 2<br>tt se 0.1 ee 2 ciieee D=0.5<br>12<br>0.2<br>0.1<br>2 10 LY HL_| | 0.05<br>2 {[ ti) N | |)? Ee 0.02 Co<br>i pti tN <xtts 0.01 CSSCLA ns =~ El<br>8 0.01<br>single pulse<br>e | | fi fy i oe NG] LG FAR HAF EisTt<br>5 Tr YT AUT TET TE tT ml<br>ceSo 6 | | | | ft fF fo) NY TE5 omaa a<br>ey 4 0.001 V IE<br>~ ~ Cy=1;/R, C2=te/Re<br>2<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.01683439 0.09776416 0.1309769 0.2343649 0.02236283 1.3E-3<br>τ i[s]: 3.1E-5 1.8E-4 1.9E-3 0.01018811 0.07263209 1.842143<br>0 1E-4<br>10 11 12 13 14 15 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>t SC thJC<br>Z<br>**----- End of picture text -----**<br>


Figure 19. 

Figure 20. Typical ( _D_ = _t_ p/T) 

**==> picture [118 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
( V CE 400V, start at T j 150°C)<br>**----- End of picture text -----**<br>


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## **Package Drawing PG-TO247-3** 

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## **Testing Conditions** 

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**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>


Figure C. **Definition of diode switching characteristics** 

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t<br>**----- End of picture text -----**<br>


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Figure D. 

**==> picture [7 x 4] intentionally omitted <==**

**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

13 

Rev.�2.1,��2016-02-05 

IGW30N60TP 

## TRENCHSTOP[TM] P erformance 

|Revision History|||
|---|---|---|
|IGW30N60TP|||
|Revision: 2016-02-05,|Rev. 2.1||
|Previous Revision|||
|Revision<br>Date||Subjects(major changes since last revision)|
|2.1<br>-||Release of final datasheet|



## party. 

## **Warnings** 

14 



## Links

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- [Supplier page](https://es.farnell.com/infineon/igw30n60tpxksa1/igbt-single-600v-53a-to-247/dp/2781019)
---

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