# IGBT, 30 A, 2.05 V, 187 W, 600 V, TO-247, 3 Pins

![Product image](https://novapart.co/image/farnell:1832354/)

**URL**: https://novapart.co/products/IGW30N60TFKSA1/igbt-30-a-205-v-187-w-600-to-247-3-pins
**SKU**: IGW30N60TFKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.4300
**Stock**: 100+
**Lead Time**: 190 days (indicative)

## Description

DC Collector Current:30A; Collector Emitter Saturation Voltage Vce(on):2.05V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3Pins; Oper

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | - |
| Power Dissipation | 187W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 30A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 2.05V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1832354/)

IGW30N60T 

TRENCHSTOP™ Series 

## Cnfincon 

## Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology 

## ~/ © @ Gee 

## **Features:** 

- Very low _V_ CE(sat) 1.5V (typ.) 

- Maximum Junction Temperature 175°C 

- Short circuit withstand time 5s 

- Designed for : 

   - Frequency Converters 

   - Uninterruptible Power Supply 

- TRENCHSTOP™ and Fieldstop technology for 600V applications offers : 

   - very tight parameter distribution 

   - high ruggedness, temperature stable behavior 

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C<br>G<br>E<br>PG-TO247-3<br>**----- End of picture text -----**<br>


   - very high switching speed 

- Positive temperature coefficient in _V_ CE(sat) 

- Low EMI 

- Low Gate Charge 

- Qualified according to JEDEC[1] for target applications 

- Pb-free lead plating; RoHS compliant 

- Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ 

|**Type**|**_V_CE**|**_I_C**|**_V_CE(sat****_),Tj=25°C_**|**_T_j,max**|**Marking Code**|**Package**|
|---|---|---|---|---|---|---|
|IGW30N60T|600V|30A|1.5V|175C|G30T60|PG-TO247-3|



|**Maximum Ratings **||||
|---|---|---|---|
|**Parameter**|**Symbol**<br>~~a~~|**Value**<br>~~a~~|**Unit**<br>~~a~~|
|Collector-emitter voltage,_T_j≥ 25C|_V_C E|600|V|
|DC collector current, limited by_T_jmax<br>_T_C= 25C, value limited by bondwire<br>_T_C= 100C|_I_C<br>~~fo~~<br>~~ee~~|45<br>39<br>~~fo~~<br>~~ee~~|A<br>~~fo~~<br>~~ee~~<br>~~PF~~|
|Pulsed collector current,_t_plimited by _T_jmax|_I_Cpul s<br>~~ee~~|90<br>~~ee~~||
|Turn off safe operatingarea,_V_CE= 600V,_T_j= 175C,_t_p= 1µs|_-_<br>~~ee~~<br>~~PF~~|90<br>~~ee~~<br>~~PF~~||
|Gate-emitter voltage|_V_G E<br>~~PF~~<br>~~eee~~|20<br>~~PF~~<br>~~eee~~|V<br>~~PF~~<br>~~eee~~|
|Short circuit withstand time2) <br>_V_GE= 15V,_V_CC400V,_T_j 150C|_t_SC<br>~~eee~~<br>~~Ff~~|5<br>~~eee~~<br>~~Ff~~|s<br>~~eee~~<br>~~Ff~~|
|Power dissipation_T_C= 25C|_P_t ot<br>~~PF~~<br>~~ee~~|187<br>~~PF~~<br>~~eee~~|W<br>~~PF~~<br>~~eee~~|
|Operating junction temperature|_T_ j <br>~~ee~~<br>~~ee ee~~|-40...+175<br>~~eee~~<br>~~ee~~|C<br>~~eee~~<br>~~ee~~<br>~~ee~~|
|Storage temperature|_T_stg<br>~~ee ~~<br>~~ee ee~~<br>~~ee ee~~|-55...+150<br> ~~eee~~<br>~~ee~~<br>~~ee~~||
|Solderingtemperature, 1.6mm(0.063 in.)from case for 10s|-<br>~~ee ee~~<br>~~ee ee~~|260<br>~~ee~~<br>~~ee~~||



- 1 J-STD-020 and JESD-022 

- 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 

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## TRENCHSTOP™ Series 

## IGW30N60T 

## **Thermal Resistance** 

|**Thermal Resistance**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Max. Value**|**Unit**|
|**Characteristic**|||||
|IGBT thermal resistance,<br>junction – case|_R_t hJC||0.80|K/W|
|Thermal resistance,<br>junction – ambient|_R_t hJA||40||



## **Electrical Characteristic,** at _T_ j = 25 C, unless otherwise specified 

|**Electrical Characteristic,**at_T_j= 25|C, unless ot|herwise specified|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ. **|**max.**||
|**Static Characteristic**|||||||
|Collector-emitter breakdown voltage|_V_( BR )C ES|_V_G E=0V,_I_C=0.2mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_C E( sat )|_V_G E= 15V,_I_C=30A<br>_T_j=25C<br>_T_j=175C|-<br>-|1.5<br>1.9|2.05<br>-||
|Gate-emitter threshold voltage|_V_G E( t h)|_I_C=0.43mA,<br>_V_C E=_V_G E|4.1|4.9|5.7||
|Zero gate voltage collector current|_I_CE S|_V_C E=600V,<br>_V_G E=0V<br>_T_j=25C<br>_T_j=175C|-<br>-|-<br>-|40<br>2000|µA|
|Gate-emitter leakage current|_I_GE S|_V_C E=0V,_V_G E=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_C E=20V,_I_C=30A|-|16.7|-|S|
|Integratedgate resistor|_RG int_|||-||Ω|
|**Dynamic Characteristic**|||||||
|Input capacitance|_C_i ss|_V_C E=25V,<br>_V_G E=0V,<br>_f_=1MHz|-|1630|-|pF|
|Output capacitance|_C_os s||-|108|-||
|Reverse transfer capacitance|_C_rs s||-|50|-||
|Gate charge|_Q_Gat e|_V_C C=480V,_I_C=30A<br>_V_G E=15V|-|167|-|nC|
|Internal emitter inductance<br>measured 5mm(0.197 in.)from case|_L_E|PG-TO-220-3-1<br>PG-TO-247-3-21|-<br>-|7<br>13|-<br>-|nH|
|Short circuit collector current1)|_I_C( SC )|_V_G E=15V,_t_SC5s<br>_V_C C= 400V,<br>_T_j=  150C|-|275|-|A|



> 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 

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## TRENCHSTOP™ Series 

## IGW30N60T 

## **Switching Characteristic, Inductive Load,** at _T_ j=25 C 

|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**Typ.**|**max.**||
|**IGBT Characteristic**|||||||
|Turn-on delaytime|_t_d( o n)|_T_j=25C,<br>_V_C C=400V,_I_C=30A,<br>_V_G E=0/15V,<br>_r_G=10.6,<br>_L_=136nH,_C_=39pF<br>_L_,_C_from Fig. E<br>Energy losses include<br>“tail” and diode reverse<br>recovery.<br>Diode from IKW30N60T|-|23|-|ns|
|Rise time|_t_r||-|21|-||
|Turn-off delaytime|_t_d( of f)||-|254|-||
|Fall time|_t_f||-|46|-||
|Turn-on energy|_E_o n||-|0.69|-|mJ|
|Turn-off energy|_E_o ff||-|0.77|-||
|Total switching energy|_E_t s||-|1.46|-||



**Switching Characteristic, Inductive Load,** at _T_ j=175 C 

|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**Typ. **|**max.**||
|**IGBT Characteristic**|||||||
|Turn-on delaytime|_t_d( o n)|_T_j=175C,<br>_V_C C=400V,_I_C=30A,<br>_V_G E=0/15V,<br>_r_G=10.6,<br>_L_=136nH,_C_=39pF<br>_L_,_C_from Fig. E<br>Energy losses include<br>“tail” and diode reverse<br>recovery.<br>Diode from IKW30N60T|-|24|-|ns|
|Rise time|_t_r||-|26|-||
|Turn-off delaytime|_t_d( of f)||-|292|-||
|Fall time|_t_f||-|90|-||
|Turn-on energy|_E_o n||-|1.0|-|mJ|
|Turn-off energy|_E_o ff||-|1.1|-||
|Total switching energy|_E_t s||-|2.1|-||



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## TRENCHSTOP™ Series 

## IGW30N60T 

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90A<br>80A<br>70A<br>60A T C =80°C<br>50A<br>40A T C=110°C<br>30A<br>I c<br>20A<br>10A Ic<br>0A<br>100Hz 1kHz 10kHz 100kHz<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>


_f_ , SWITCHING FREQUENCY 

**Figure 1. Collector current as a function of switching frequency** ( _T_ j  175C, _D =_ 0.5, _V_ CE = 400V, _V_ GE = 0/15V, _r_ G = 10) 

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100A<br>t p=2µs<br>10µs<br>10A<br>50µs<br>1A<br>1ms<br>10ms<br>DC<br>0.1A<br>1V 10V 100V 1000V<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V CE, COLLECTOR-EMITTER VOLTAGE<br>**----- End of picture text -----**<br>


**Figure 2. Safe operating area** ( _D =_ 0, _T_ C = 25C, _T_ j 175C; _V_ GE=0/15V) 

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160W<br>120W<br>80W<br>40W<br>0W<br>25°C 50°C 75°C 100°C 125°C 150°C<br>POWER DISSIPATION<br>tot,<br>P<br>**----- End of picture text -----**<br>


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40A<br>30A<br>20A<br>10A<br>__  I cmax<br>---  max. current limited by bondwire<br>0A<br>25°C 50°C 75°C 100°C 125°C 150°C<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>


_T_ C, CASE TEMPERATURE 

**Figure 3. Power dissipation as a function of case temperature** ( _T_ j  175C) 

_T_ C, CASE TEMPERATURE 

**Figure 4. Collector current as a function of** 

**case temperature** ( _V_ GE  15V, _T_ j  175C) 

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## TRENCHSTOP™ Series 

## IGW30N60T 

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80A<br>70A<br>V GE =20V<br>60A<br>15V<br>50A 13V<br>11V<br>40A<br>9V<br>30A 7V<br>20A<br>10A<br>0A<br>0V 1V 2V 3V<br>V CE, COLLECTOR-EMITTER VOLTAGE<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>


**Figure 5. Typical output characteristic** ( _T_ j = 25°C) 

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**----- Start of picture text -----**<br>
50A<br>V GE =20V<br>40A 15V<br>13V<br>30A 11V<br>9V<br>7V<br>20A<br>10A<br>0A<br>0V 1V 2V 3V<br>V CE, COLLECTOR-EMITTER VOLTAGE<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>


**Figure 6. Typical output characteristic** ( _T_ j = 175°C) 

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**----- Start of picture text -----**<br>
50A 2.5V<br>I C =60A<br>40A 2.0V<br>30A 1.5V IC =30A<br>20A 1.0V I C =15A<br>T J=175°C<br>10A 0.5V<br>25°C<br>0A 0.0V<br>0V 2V 4V 6V 8V<br>0°C 50°C 100°C 150°C<br>V GE, GATE-EMITTER VOLTAGE T J, JUNCTION TEMPERATURE<br>EMITT SATURATION VOLTAGE<br>-<br>COLLECTOR CURRENT<br>,<br>I C<br>COLLECTOR<br>CE(sat),<br>V<br>**----- End of picture text -----**<br>


**Figure 7. Typical transfer characteristic** (VCE=20V) 

**Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature** ( _V_ GE = 15V) 

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## TRENCHSTOP™ Series 

## IGW30N60T 

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**----- Start of picture text -----**<br>
t<br>d(off)<br>t f<br>100ns<br>t<br>d(on)<br>10ns<br>t r<br>1ns<br>0A 10A 20A 30A<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
t d(off)<br>t f<br>100ns<br>t<br>d(on)<br>t r<br>10ns<br>   <br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br>


## _IC_ , COLLECTOR CURRENT 

**Figure 9. Typical switching times as a function of collector current** (inductive load, _T_ J=175°C, _V_ CE = 400V, VGE = 0/15V, _r_ G = 10Ω, Dynamic test circuit in Figure E) 

## _R_ G, GATE RESISTOR 

**Figure 10. Typical switching times as a function of gate resistor** (inductive load, _T_ J = 175°C, _V_ CE= 400V, VGE = 0/15V, _I_ C = 30A, Dynamic test circuit in Figure E) 

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t d(off)<br>100ns<br>t f<br>t<br>d(on)<br>t r<br>10ns<br>25°C 50°C 75°C 100°C 125°C 150°C<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br>


## _T_ J, JUNCTION TEMPERATURE 

**Figure 11. Typical switching times as a function of junction temperature** (inductive load, _V_ CE = 400V, VGE = 0/15V, _I_ C = 30A, _r_ G=10Ω, Dynamic test circuit in Figure E) 

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7V<br>6V<br>max.<br>typ.<br>5V<br>4V min.<br>3V<br>2V<br>1V<br>0V<br>-50°C 0°C 50°C 100°C 150°C<br>EMITT TRSHOLD VOLTAGE<br>-<br>GATE<br>GE(th ) ,<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
T J, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br>


**Figure 12. Gate-emitter threshold voltage as a function of junction temperature** ( _I_ C = 0.43mA) 

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## IGW30N60T 

## TRENCHSTOP™ Series 

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**----- Start of picture text -----**<br>
*)  E on and  E ts include losses<br>   due to diode recovery<br>E ts*<br>3.0mJ<br>E off<br>2.0mJ<br>1.0mJ<br>E on *<br>0.0mJ<br>    <br>R G, GATE RESISTOR<br>Figure 14. Typical switching energy losses<br>as a function of gate resistor<br>(inductive load,  T J = 175°C,<br>V CE = 400V, VGE = 0/15V,  I C = 30A,<br>Dynamic test circuit in Figure E)<br>*)  E on and  E ts include losses<br>3.0mJ     due to diode recovery<br>2.5mJ<br>2.0mJ<br>E ts*<br>1.5mJ<br>E off<br>1.0mJ<br>E on*<br>0.5mJ<br>0.0mJ<br>300V 350V 400V 450V 500V 550V<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
5.0mJ *)     due to diode recovery E on and  E ts include losses  E ts *<br>4.0mJ<br>3.0mJ<br>2.0mJ<br>E off<br>1.0mJ<br>E on*<br>0.0mJ<br>0A 10A 20A 30A 40A 50A<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IC , COLLECTOR CURRENT<br>**----- End of picture text -----**<br>


**Figure 13. Typical switching energy losses as a function of collector current** (inductive load, _T_ J = 175°C, _V_ CE = 400V, VGE = 0/15V, _r_ G = 10Ω, Dynamic test circuit in Figure E) 

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**----- Start of picture text -----**<br>
2.0mJ *)  E on and  E ts include losses<br>   due to diode recovery<br>E ts*<br>1.5mJ<br>1.0mJ<br>E off<br>0.5mJ E on*<br>0.0mJ<br>25°C 50°C 75°C 100°C 125°C 150°C<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
T J, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
VCE , COLLECTOR-EMITTER VOLTAGE<br>**----- End of picture text -----**<br>


## **Figure 15. Typical switching energy losses as a function of junction temperature** 

## **Figure 16. Typical switching energy losses as a function of collector emitter voltage** 

(inductive load, _T_ J = 175°C, _V_ GE = 0/15V, _I_ C = 30A, _r_ G = 10Ω, Dynamic test circuit in Figure E) 

(inductive load, _V_ CE = 400V, VGE = 0/15V, _I_ C = 30A, _r_ G = 10Ω, Dynamic test circuit in Figure E) 

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## TRENCHSTOP™ Series 

## IGW30N60T 

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**----- Start of picture text -----**<br>
15V<br>120V<br>480V<br>10V<br>5V<br>0V<br>0nC 30nC 60nC 90nC 120nC 150nC 180nC<br>EMITTER VOLTAGE<br>-<br>GATE<br>,<br>GE<br>V<br>**----- End of picture text -----**<br>


_Q_ GE, GATE CHARGE 

**Figure 17. Typical gate charge** ( _I_ C=30 A) 

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**----- Start of picture text -----**<br>
C  iss<br>1nF<br>100pF C oss<br>C rss<br>0V 10V 20V 30V 40V<br>CAPACITANCE<br>c,<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V CE, COLLECTOR-EMITTER VOLTAGE<br>**----- End of picture text -----**<br>


**Figure 18. Typical capacitance as a function of collector-emitter voltage** ( _V_ GE=0V, _f_ = 1 MHz) 

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**----- Start of picture text -----**<br>
400A<br>300A<br>200A<br>100A<br>0A<br>12V 14V 16V 18V<br>COLLECTOR CURRENT<br>, short circuit<br>I C(sc)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
12µs<br>10µs<br>8µs<br>6µs<br>4µs<br>2µs<br>0µs<br>10V 11V 12V 13V 14V<br>SHORT CIRCUIT WITHSTAND TIME<br>t SC,<br>**----- End of picture text -----**<br>


_V_ GE, GATE-EMITTETR VOLTAGE 

**Figure 19. Typical short circuit collector current as a function of gateemitter voltage** 

( _V_ CE  400V, _T_ j  150C) 

_V_ GE, GATE-EMITETR VOLTAGE 

**Figure 20. Short circuit withstand time as a** 

- **function of gate-emitter voltage** ( _V_ CE=400V _,_ start at _T_ J _=_ 25°C, _T_ Jmax<150°C) 

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## TRENCHSTOP™ Series 

## IGW30N60T 

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**----- Start of picture text -----**<br>
D =0.5<br>0.2<br>10 -1K/W 0.1 R , ( K / W )  , ( s )<br>0.29566 6.478*10 [-2]<br>0.05 0.25779  6.12*10 [-3 ]<br>0.19382  4.679 * 10 [-4]<br>*<br>0.05279 6.45 10 [-5]<br>0.02 R 1 R 2<br>-2 0.01<br>10 K/W C 1=1/ R 1 C 2=2/ R 2<br>single pulse<br>1µs 10µs 100µs 1ms 10ms 100ms<br>t P, PULSE WIDTH<br>TRANSIENT THERMAL IMPEDANCE<br>,<br>thJC<br>Z<br>**----- End of picture text -----**<br>


**Figure 21. IGBT transient thermal impedance** ( _D = t_ p / _T_ ) 

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## IGW30N60T 

## TRENCHSTOP™ Series 

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## IGW30N60T 

## TRENCHSTOP™ Series 

**Figure A. Definition of switching times** 

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**----- Start of picture text -----**<br>
i,v<br>di F /dt t r r =t S + t F<br>4 Q r r =Q S + Q F<br>t<br>—_ r r ee<br>I F t S t F<br>I Q S Q F 10%  I r r m t<br>r r m 90%  I di r r /dt V R<br>r r m<br>Figure C. Definition of diodes<br>switching characteristics<br>1 2 n<br>r1 r 2 r n<br>T (t)j<br>p(t) r1 r 2 r n<br>T C<br>**----- End of picture text -----**<br>


**Figure D. Thermal equivalent circuit** 

**Figure B. Definition of switching losses** 

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IFAG IPC TD VLS 

IGW30N60T TRENCHSTOP™ Series 

**==> picture [137 x 60] intentionally omitted <==**

**Published by Infineon Technologies AG 81726 Munich, Germany © 2015 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( **www.infineon.com** ) **.** 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Rev. 2.8   19.05.2015 

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IFAG IPC TD VLS 



## Links

- [View this product on Novapart](https://novapart.co/products/IGW30N60TFKSA1/igbt-30-a-205-v-187-w-600-to-247-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/igw30n60tfksa1/igbt-600v-30a-to247/dp/1832354)
---

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