# IGBT, 40 A, 1.95 V, 170 W, 600 V, TO-220, 3 Pins

![Product image](https://novapart.co/image/farnell:3816950/)

**URL**: https://novapart.co/products/IGP20N60H3XKSA1/igbt-40-a-195-v-170-w-600-to-220-3-pins
**SKU**: IGP20N60H3XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.7330
**Stock**: 200+
**Lead Time**: 141 days (indicative)

## Description

Available until stocks are exhausted

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP |
| Power Dissipation | 170W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-220 |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 40A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.95V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3816950/)

## IGBT 

IGP20N60H3 

IGP20N60H3 

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**----- Start of picture text -----**<br>
Features: C<br>TRENCHSTOP [TM] technology offering<br>¢ very low turn-off energy<br>low V CEsat<br>* low EMI<br>* maximum junction temperature 175°C G<br>* qualified according to JEDEC for target applications E<br>¢ Pb-free lead plating, halogen-free mould compound, RoHS<br>compliant<br>C<br>* complete product spectrum and PSpice Models: :<br>http://www.infineon.com/igbt/ , ‘dj<br>Applications:<br>* uninterruptible power supplies Fj Pa<br>* welding converters Gf<br>* converters with high switching frequency f ff<br>G<br>C<br>E<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IGP20N60H3|600V|20A|1.95V|175°C|G20H603|PG-TO220-3|



2 

IGP20N60H3 

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## High�speed�switching�series�third�generation 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 

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## High�speed�switching�series�third�generation 

## **Maximum�ratings** 

|**Maximumratings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||40.0<br>20.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||80.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||80.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||170.0<br>85.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6 mm(0.063 in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|



## **Thermal�Resistance** 

|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.88|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||62|K/W|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=2.00mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.95<br>2.30<br>2.50|2.40<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.29mA,_V_CE=_V_GE|4.1|5.1|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>1500.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=20.0A|-|10.9|-|S|



Rev.�2.2,��2014-03-11 

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IGP20N60H3 

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## High�speed�switching�series�third�generation 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1100|-|pF|
|Output capacitance|_C_oes||-|70|-||
|Reverse transfer capacitance|_C_res||-|32|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=20.0A,<br>_V_GE=15V|-|120.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|120|-|A|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=14.6Ω,_L_σ=75nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode (IKP20N60H3) reverse<br>recovery.|-|16|-|ns|
|Rise time|_t_r||-|20|-|ns|
|Turn-off delaytime|_t_d(off)||-|194|-|ns|
|Fall time|_t_f||-|11|-|ns|
|Turn-on energy|_E_on||-|0.45|-|mJ|
|Turn-off energy|_E_off||-|0.24|-|mJ|
|Total switchingenergy|_E_ts||-|0.69|-|mJ|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=14.6Ω,_L_σ=75nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode (IKP20N60H3) reverse<br>recovery.|-|16|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|227|-|ns|
|Fall time|_t_f||-|14|-|ns|
|Turn-on energy|_E_on||-|0.60|-|mJ|
|Turn-off energy|_E_off||-|0.36|-|mJ|
|Total switchingenergy|_E_ts||-|0.96|-|mJ|



Rev.�2.2,��2014-03-11 

5 

High speed switching series third generation IGP20N60H3 

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60 100<br>XN po NN eS TT<br>50 TINIEST<br>\. CT = ESP Spear<br>PI N E ae tp=1µs  NS et el<br>| NU Nee eC ae Alli<br>ST b 40 - Xx NUIIKOIN SIIIN LEM E= 10 10µs TNTWeirs<br>6 | UWE<br>\ aati<br>oe WCAC) € = 50µs Sesn TTT<br>ra al \ DN oe a a ee ON EE<br>Ss TC=80° x \ y 5 lz 0 ee ee<br>a 30 Pomc IMI) ¢ Rott 100µs eaeeSe se<br>AN<br>GS]i eT TC=110° Sie = ani 4 HT) & © aFE 200µs |NSS<br>ie TC=80° Patil  GHTIL rn (a ‘<br>500µs<br>= 20 eee TC=110° Hi ret Sh| = 1 DC |CoML\<br>‘ NaN > — a<br>©- TMI TIMES NN © EBS [SSS] sees<br>yp vO \ \ a a ee<br>10 AE ALLE OR ANN a |<br>PSS 0<br>aI : aX ell<br>ren e COMM TT | |TV<br>0 0.1<br>VV EE<br>1 10 100 1000 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T j 175°C; V GE=15V)<br>( T j ≤ 175°C, D =0.5, V CE =400V, V GE=15/0V,<br>r G=14,6 Ω )<br>180 40<br>Ket<br>160<br>35<br>T EP A<br>140<br>30<br>120<br>25<br>Kk TY ,<br>eLTXTT< 100 \ kKE<br>ee eee:<br>2) ao 20<br>Q O<br>80<br>15<br>5 WwW5 \<br>60<br>10<br>40<br>"PTT PRET EPP EA<br>5<br>20<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br>


> Figure 3. Power **temperature** ( _T_ j ≤ 175°C) 

Figure 4. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ j ≤ 175°C) 

6 

IGP20N60H3 High speed switching series third generation 

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**----- Start of picture text -----**<br>
80 80<br>70 VGE=20V 70 VGE=20V<br>Wy a / adBae?fl |<br>17V 17V<br>60 60<br>15V | 15V Ul |<br>13V 13V<br>50 50<br>a 11V a 11V<br>9V 9V<br>40 40<br>SHE de LR<br>7V 7V<br>EL 30 5V ANE 30 Lee 5V<br>as Naa<br>20 20<br>><br>10 10<br>F R PARE<br>pA S S OLA<br>0 0<br>0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 8<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T j=25°C) ( T j=175°C)<br>70 4.0<br>Tj=25°C IC=10A<br>Tj=175°C IC=20A<br>IC=40A<br>60 EJ))) ye. 6] iv<br>3.5<br>-<br>I E<br>50<br>, [V e er<br>3.0<br>40<br>ao / = 2.5 7<br>30<br>S /,eV ° 2.0 he<br>; 20 fo)<br>oY) Pe 1.5<br>10<br>0 1.0<br>5 IVT 6 7 8 9  TT 10 11 } 12 0 LETT 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>I C I C<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>


( _V_ GE=15V) 

7 

~~High speed switching series third generation~~ IGP20N60H3 

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**----- Start of picture text -----**<br>
1000<br>| of | | UT a r|  a td(off) ee a ee<br>tf<br>| | | | fon td(on) FS<br>Pot tr ee<br>i I p oe<br>j td(off) e t || o e<br>tf + | | | pee tt<br>td(on)<br>Z tr Efi4 |<br>= 100 p o =<br>9 og<br>oO [oop] oO 100<br>Z a eeee ee<br>6 for. |) | | | GB<br>PE PREP) & Ee<br>= . = ee ee ee ee ee<br>a<br>PSN er} Pe<br>J e e<br>10 a ~ 10 L ee<br>0 5 10 15 20 25 30 35 40 5 10 15 20 25 30 35 40 45 50<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistor<br>(ind. load, T j =175°C, V CE  =400V, V GE=15/0V, (ind. load, T j =175°C, V CE =400V, V GE=15/0V,<br>r G=14,6 , test circuit in Fig. E) I C =20A, test circuit in Fig. E)<br>6.0<br>typ.<br>min.<br>ee 5.5 max.<br>Zz ee ee ee<br>Oo<br>100 e ttd(off)f Ssv es  EWw< 5.0 — RE ss,<br>— tt td(on) a  aee O> NN<br>tr<br>Be P N<br>o SSS a es 5 4.5 ~<br>oc ~ -<br>4.0<br>| 10 S a eeeyss ) Ee 3.5 | SS*<br>a ~<br>- a “ae<br>a N<br>po 3.0 a<br>2.5<br>1 2.0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>Figure 11. Typical switching times as a function of Figure 12. Gate-emitter threshold voltage as a<br>junction temperature of junction temperature<br>(ind. load, V CE =400V, V GE =15/0V, I C=20A, ( I C=0.29mA)<br>r G=14,6 , test circuit in Fig. E)<br>t t<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


8 

IGP20N60H3 

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**----- Start of picture text -----**<br>
2.5 2.00<br>Eoff Eoff<br>Eon Eon<br>Ets 1.75 Ets<br>2.0<br>1.50<br>Ww Ww<br>7) 7)<br>o o<br>@) 4 @) 1.25<br>_ 1.5 é aa) oe<br>O 7 O a oT<br>w , ¢ ag a Daa<br>Ww / ’ Ww 1.00 2 =<br>Zz a y Z wo Uee<br>1.0<br>x e “ x 0.75 wie 7 |<br>0.50<br>0.5<br>0.25<br>; EET TT EberTT tt<br>0.0 0.00<br>4 8 12 16 20 24 28 32 36 40 5 10 15 20 25 30 35 40 45 50<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(ind. load, T j =175°C, V CE =400V, V GE=15/0V, (ind. load, T j =175°C, V CE =400V, V GE=15/0V,<br>r G=14,6 , test circuit in Fig. E) I C =20A, test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1.0 1.50<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>1.25<br>oe 0.8 e re<br>pole d g :<br>Ww uw a<br>ep)7) 7)ep) 1.00 ? “<br>ef—! 0.6 | | —!<br>O O<br>waPB fee ] a8 ,<br>im wi 0.75 7<br>Z Z a<br>pov | s “ -<br>0.4<br>0.50<br>eee: =<br>pe Ta foe<br>ee 0.2<br>0.25<br>0.0 0.00<br>25 50 75 100 125 150 175 200 250 300 350 400 450<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(ind load, V CE =400V, V GE =15/0V, I C=20A, (ind. load, T j =175°C, V GE =15/0V, I C=20A,<br>r G=14,6 , test circuit in Fig. E) r G=14,6 , test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>


9 

IGP20N60H3 

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**----- Start of picture text -----**<br>
16<br>120V<br>480V<br>14<br>7/ 1000 a a<br>12<br>Ww fo Ce ee Cies az<br>) J _ a Coes ||<br>Cres<br>i 10 / ra Fs i |<br>eee Ww<br>ui 8 Pt 2 x a —eee eee<br>100<br>in & pd<br>uw 6 Oo po SE<br>E . a<br><x po<br>4<br>2<br>0 10<br>0 20 40 60 80 100 120 140 0 10 20 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


Figure 17. Typical ( _I_ C=20A) 

Figure 18. 

( _V_ GE 

**==> picture [471 x 275] intentionally omitted <==**

**----- Start of picture text -----**<br>
300 15<br>ee eee<br>: {tii<br>250 12<br>fiia | | ya ti ee<br>3 F= ~~IN<br>Bite EN<br>200 9<br>5Ww / i ™ ~<br>Pt tiie ye LEE ENE<br>C E<br>e tities EEE EEN<br>150 6<br>esO {4 °Kb N<br>G ZL o ><br>E/§<br>100 3<br>“tttVA EEE EEE LEEEEE EE<br>40 eee<br>50 0<br>10 12 14 16 18 20 10 11 12 13 14 15<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C(SC) t SC<br>**----- End of picture text -----**<br>


Figure 19. 

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**----- Start of picture text -----**<br>
( V CE 400V, start at T j=25°C)<br>**----- End of picture text -----**<br>


Figure 20. Short circuit withstand time gate-emitter voltage ( _V_ CE 400V, start at _T_ j 150°C) 

10 

IGP20N60H3 High speed switching series third generation 

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**----- Start of picture text -----**<br>
1<br>TT<br>_ A<br>S TT AS<br>D=0.5<br>y ST ge<br>geZWW 0.1 LOUPe eeWTEE 0.20.10.05<br>= ed dealer ee ee<br>0.02<br>= na<br>=z et eee Secmatill 1II<br>a ee 0.01<br>single pulse<br>us il<br>aa<br>0.01<br>B eana a<br>Z 0 Re Tn<br>< CA on] -- 1<br>& PANT TT TTT IMI<br>- ST OT TT eres cael<br>i: 1 2 3 4<br>ri[K/W]: 0.07041042 0.3070851 0.3198984 0.1871538<br>a τ i[s]: 9.6E-5 6.8E-4 0.01084623 0.06925485 [|]<br>0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p ,PULSE WIDTH [s]<br>Figure 21. IGBT transient thermal impedance<br>( D = t p/T)<br>thJC<br>Z<br>**----- End of picture text -----**<br>


11 

IGP20N60H3 

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High�speed�switching�series�third�generation 

## PG-TO220-3 

12 

Rev.�2.2,��2014-03-11 

IGP20N60H3 

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## High�speed�switching�series�third�generation 

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**----- Start of picture text -----**<br>
v GE (t)<br>90%  V GE<br>t<br>i C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C t<br>v CE (t)<br>t<br>t d(off) t f t d(on) t r<br>v GE (t)<br>90%  V GE<br>10%  V GE t<br>i C (t)<br>2%  I C t<br>v CE (t)<br>2%  V CE t<br>t 1 t 2 t 3 t 4<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
a b<br>a b<br>**----- End of picture text -----**<br>


t 

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Rev.�2.2,��2014-03-11 

IGP20N60H3 

## IGP20N60H3 

## Previous Revision 

|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.1|2010-02-01|-|
|1.2|2010-07-26|Preliminarydatasheet|
|2.1|2013-12-09|New value IRmax limit at 175°C|
|2.2|2014-03-11|Max ratings Vce, Tvj ≥25°C|



## **Information** 

## **Warnings** 

endangered. 

14 



## Links

- [View this product on Novapart](https://novapart.co/products/IGP20N60H3XKSA1/igbt-40-a-195-v-170-w-600-to-220-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/igp20n60h3xksa1/igbt-single-transistor-600v-to/dp/3816950)
---

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