# IGBT, 23 A, 1.5 V, 75 W, 650 V, TO-252 (DPAK), 3 Pins
**URL**: https://novapart.co/products/IGD10N65T6ARMA1/igbt-23-a-15-v-75-w-650-to-252-dpak-3-pins
**SKU**: IGD10N65T6ARMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.8650
**Stock**: 1000+
**Lead Time**: 190 days (indicative)
## Description
Available until stocks are exhausted Alternative available
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP IGBT6 |
| Power Dissipation | 75W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-252 (DPAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 23A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.5V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3648087/)
IGD10N65T6
CE(sat) junction withstand field-stop tight parameter ruggedness, CEsat and charge Q G
www.infineon.com/igbt
> Drives * GPD (general purpose drives)
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E
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|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IGD10N65T6|650V|10A|1.5V|175°C|G10ET6|PG-TO252-3|
Datasheet www.infineon.com
2020-04-29
IGD10N65T6
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## TRENCHSTOP™�IGBT6
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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IGD10N65T6
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## TRENCHSTOP™�IGBT6
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax
_T_c=25°C
_T_c=100°C|_I_C||23.0
14.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||42.5|A|
|Turnoffsafeoperatingarea_V_CE≤650V,_T_vj≤175°C|-||42.5|A|
|Gate-emitter voltage
TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20
±30|V|
|Short circuit withstand time
_V_GE=15.0V,_V_CC≤360V
Allowed number of short circuits < 1000
Time between short circuits:≥1.0s
_T_vj=150°C|_t_SC||3|µs|
|Powerdissipation_T_c=25°C
Powerdissipation_T_c=100°C|_P_tot||75.0
37.5|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,
reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,
junction - case|_R_th(j-c)||-|-|2.00|K/W|
|Thermal resistance, min. footprint
junction - ambient|_R_th(j-a)||-|-|75|K/W|
|Thermal resistance, 6cm² Cu on
PCB
junction - ambient|_R_th(j-a)||-|-|50|K/W|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=8.5A
_T_vj=25°C
_T_vj=125°C
_T_vj=150°C|-
-
-|1.50
1.65
1.75|1.90
-
-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.15mA,_V_CE=_V_GE|4.8|5.6|6.4|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V
_T_vj=25°C
_T_vj=150°C|-
-|-
360|30
-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=8.5A|-|8.7|-|S|
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IGD10N65T6
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## TRENCHSTOP™�IGBT6
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V
_f_=1000kHz|-|790|-|pF|
|Output capacitance|_C_oes||-|41|-||
|Reverse transfer capacitance|_C_res||-|12|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=8.5A,
_V_GE=15V|-|27.0|-|nC|
|Internal emitter inductance
measured 5mm (0.197 in.) from
case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,
_V_CC=400V,_I_C=8.5A,
_V_GE=0.0/15.0V,
_R_G(on)=47.0Ω,_R_G(off)=47.0Ω,
_L_σ=30nH,_C_σ=150pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|30|-|ns|
|Rise time|_t_r||-|18|-|ns|
|Turn-off delaytime|_t_d(off)||-|106|-|ns|
|Fall time|_t_f||-|46|-|ns|
|Turn-on energy|_E_on||-|0.20|-|mJ|
|Turn-off energy|_E_off||-|0.07|-|mJ|
|Total switchingenergy|_E_ts||-|0.27|-|mJ|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,
_V_CC=400V,_I_C=8.5A,
_V_GE=0.0/15.0V,
_R_G(on)=47.0Ω,_R_G(off)=47.0Ω,
_L_σ=30nH,_C_σ=150pF
_L_σ,_C_σfromFig.E
Energy losses include “tail” and
diode reverse recovery.|-|27|-|ns|
|Rise time|_t_r||-|18|-|ns|
|Turn-off delaytime|_t_d(off)||-|123|-|ns|
|Fall time|_t_f||-|72|-|ns|
|Turn-on energy|_E_on||-|0.22|-|mJ|
|Turn-off energy|_E_off||-|0.13|-|mJ|
|Total switchingenergy|_E_ts||-|0.35|-|mJ|
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Datasheet
4
IGD10N65T6
**==> picture [487 x 322] intentionally omitted <==**
**----- Start of picture text -----**
80
100
o e eee
E EE tH 60 \
z A ee tp = 1µs Ill \
a 10 TANLAINuMPUUIT z \
40
5 SSH 8 ‘
: PTT PT PT \
SLU 1
20
es) UI UII & \
| en eee Il| PN‘
0.1 0
1 10 100 1000 25 50 75 100 125 150 175
V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]
Figure 1. Figure 2.
( ah D alae T C ai T vj Pea V GE area =15V) temperature Power dissipation as a function of case
( T vj ≤ 175°C)
I C P tot
**----- End of picture text -----**
**==> picture [469 x 322] intentionally omitted <==**
**----- Start of picture text -----**
24 45
VGE=20V
22
STILL 40 18V n/n
20 15V
PN EEE EE SA 7
35
18 12V
— LENE EET SY
10V
16 30
EPONA
8V
14
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12
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rs) ) 20 \ | _
10
§ PON a
8 15
Pp Na LN
6
EAN 8 10
4
5
2
oN L L
0 0
25 50 75 100 125 150 175 0 1 2 3 4 5
T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]
Figure 3. Collector current as a function of case Figure 4. Typical output characteristic
temperature ( T vj=25°C)
( V GE ≥ 15V, T vj ≤ 175°C)
I C I C
**----- End of picture text -----**
Datasheet
5
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IGD10N65T6
**==> picture [490 x 285] intentionally omitted <==**
**----- Start of picture text -----**
45 45 LY
VGE=20V Tvj = 25°C /
Tvj = 150°C
40 18V \ 40 _ /
15V
35 35
12V
10V
30 30
ZzWW 8V \\ y / WWZz
:s 25 7V W/o\\5 25 ee
aa
6.5V
20 20
: AXW, :
:a W/k) 7 |ea
15 15
OA 10 KX O 10 Lfi
Pf |x
5 5
i» 4
0 SSSesZa NE 0 nee————2
0 1 2 3 4 5 5 6 7 8 9 10 11 12 13
V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]
I C I C
**----- End of picture text -----**
Figure 5. Typical ( _T_ vj=150°C)
Figure 6. Typical ( _V_ CE=20V)
**==> picture [471 x 286] intentionally omitted <==**
**----- Start of picture text -----**
2.6
IC = 4.3A
IC = 8.5A
IC = 17A 100
Zz ae a a ee
fe)> a7 o Px pma| s e
2.2
E am a a ee ee e e eee
x a 7 Felt}fT ft ft ft
(op) a
z wo i nee ee
a0 Be
= 1.8 O
imrd=- -_— ZO= 10 a
ke = =
O eo a a
Mm eso - a
a 1.4 ee eeeeee ee
td(off)
tf
td(on)
tr
1.0 1
0 25 50 75 100 125 150 175 4 6 8 10 12 14 16 18
T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]
t
CEsat
V
**----- End of picture text -----**
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
**==> picture [151 x 29] intentionally omitted <==**
**----- Start of picture text -----**
(inductive load, T vj =150°C, V CE=400V,
V GE =0/15V, r G=47 Ω , Dynamic test
Figure E)
**----- End of picture text -----**
6
Datasheet
2020-04-29
IGD10N65T6
**==> picture [474 x 626] intentionally omitted <==**
**----- Start of picture text -----**
100 ee
a a
| ee
100
ee EEE
a a a ee ee ee eee at
5nnSoS sees] Og OE
aGO
ats OPO QO OOOO
7 ee ean
= {| | | | |eeber™ |S
10
E 10 ” E AA
”. ee p | | | | | J fT f fT ft ff
e e
td(off) td(off)
tf tf
td(on) td(on)
tr tr
E Po = t+
1 1
10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175
r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]
Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of
resistor junction temperature
(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=0/15V,
V GE =0/15V, I C =8.5A,Dynamic test circuit in I C =8.5A, r G=47 ,Dynamic test circuit in
Figure E) Figure E)
6 0.8
typ. Eoff
Eon
0.7 Ets
Ww ,
g > ot /
e) 5 NN (dp) 0.6 ,
a
n ,
0.5
9 . g
Ww oO “ 7
aa wa
4 0.4
+ \ i : ¢ Z
ww Oo 7
= Zz 0.3 “
r EF “ a“
La ; =r 7 ye
3 0.2
FE = “ FZ A “ > a
7
, Vo beter
0.1
> Ty |
2 0.0
25 50 75 100 125 150 175 4 6 8 10 12 14 16 18
T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]
Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a
t t
E
GE(th)
V
**----- End of picture text -----**
Figure 11. Gate-emitter of junction ( _I_ C=0.15mA)
**==> picture [151 x 29] intentionally omitted <==**
**----- Start of picture text -----**
(inductive load, T vj =150°C, V CE=400V,
V GE =0/15V, r G=47 Ω ,Dynamic test
Figure E)
**----- End of picture text -----**
Datasheet
7
2020-04-29
## IGD10N65T6
**==> picture [474 x 642] intentionally omitted <==**
**----- Start of picture text -----**
0.5 0.4 —
Eoff Eoff
Eon Eon
Ets Ets
= 277 = o-
0.4
> S < > 0.3 a uae °
op) “7 (ep) -*
Lu o” Lu o7
7) Pod 7) 7"
¢p) -* (ep) o
e) -- e) ote
—! 0.3 * > i -
> 77 - > -
O -
Ww - Wi 0.2 =.
ii Pam oi -
ZzU) 0.2 - U)Zz —
e : a
ep) ep) 0.1 _———
oe t+
0.1
0.0 0.0
10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 175
r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]
Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a
function of gate resistor function of junction temperature
(inductive load, T vj =150°C, V CE=400V, (inductive load, V CE =400V, V GE=0/15V,
V GE =0/15V, I C =8.5A, Dynamic test circuit in I C =8.5A, r G=47 ,Dynamic test circuit in
Figure E) Figure E)
0.5 16 Ld
Eoff —_— V CC = 130V
Eon Z —- V CC =520V /
Ets nA 14 a
0.4
2& y} 7- 12 f f
mi7} / “a o)>.W / /7
) ” < 10
o 0.3 “ J Oa / 1
o “7 a x 8 f |fa
iiO °“ “7 E= /
0.2
Zz “ a ig 6
5 y im l
E rae ,a bE
3 “ Z 5 4
. 0.1 < LL aa
2
0.0 0
200 250 300 350 400 450 500 0 5 10 15 20 25 30
V CE , COLLECTOR-EMITTER VOLTAGE [V] Q G , GATE CHARGE [nC]
E E
G
V
E
**----- End of picture text -----**
Figure 15.
Figure 16. Typical ( _I_ C=8.5A)
**==> picture [91 x 9] intentionally omitted <==**
**----- Start of picture text -----**
T vj =150°C, V GE=0/15V,
**----- End of picture text -----**
**==> picture [59 x 19] intentionally omitted <==**
**----- Start of picture text -----**
I C =8.5A, r G=47
Figure E)
**----- End of picture text -----**
8
Datasheet
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IGD10N65T6
**==> picture [472 x 320] intentionally omitted <==**
**----- Start of picture text -----**
f— C —_ ies | a a|
Coes
Cres
1000 —E fe) Cn
1
CeNS es es es es Hl ToTssON— aVf | hl
Dh oo Sst arr
e REPS At D = 0.5
0.2
2Se 100 MEF ff | o eeSt lll/ a aTEL
Zz a Lh 0.1
0.05
O<0 aAsp S =Ws 0.02 TT
oOPSS Se- Laey ( 0.01 I ill
0.1
- 10 P| rete) EA OeH single pulse CT
—— ns mn 0/020
ee
ee e e
aee | LY
SSS AP B i: 1 2 3 4 5 6
T ri[K/W]: 0.01144 0.32342 U 1.41562 0.2272 0.02116 1.2E-3
τ i[s]: 1.0E-5 2.0E-4 9.5E-4 5.0E-3 0.1582 3.597
Se || |ts
1 0.01
0 5 10 15 20 25 30 1E-6 1E-5 1E-4 0.001 0.01 0.1
V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]
Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal resistance
collector-emitter voltage ( D = t p/T)
( V GE =0V, f=1MHz)
C
c)th(j-
Z
**----- End of picture text -----**
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Datasheet
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IGD10N65T6
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP™�IGBT6
## Package Drawing PG-TO252-3
**==> picture [391 x 283] intentionally omitted <==**
**==> picture [140 x 55] intentionally omitted <==**
**==> picture [129 x 40] intentionally omitted <==**
**==> picture [158 x 167] intentionally omitted <==**
**----- Start of picture text -----**
MILLIMETERS
DIM
MIN MAX
A 2.16 2.41
A1 0.00 0.15
b 0.64 0.89
b2 0.65 1.15
b3 4,95 5.50
c 0.46 0.61
c2 0.40 0.98
D 5.97 6.22
D1 5.02 5.84
E 6.35 6.73
E1 4.32 5.21
e 2.29 (BSC)
e1 4.57 (BSC)
N 3
H 9.40 10.48
L 1.18 1.78
L3 0.89 1.27
L4 0.51 1.02
**----- End of picture text -----**
**==> picture [83 x 175] intentionally omitted <==**
**----- Start of picture text -----**
DOCUMENT NO.
Z8B00003328
SCALE 0
2.5
0 2.5
5mm
EUROPEAN PROJECTION
ISSUE DATE
05-02-2016
REVISION
06
**----- End of picture text -----**
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IGD10N65T6
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP™�IGBT6
## **Testing Conditions**
**==> picture [252 x 588] intentionally omitted <==**
**----- Start of picture text -----**
V GE (t)
90% V GE
10% V GE t
I C (t)
90% I C 90% I C
10% I C 10% I C
t
V CE (t)
t
t d(off) t f t d(on) t r
Figure A.
V GE (t)
90% V GE
10% V GE
t
I C (t)
2% I C t
V CE (t)
t 2 t 4
E off [=] V CE x I C x d t E on [=] V CE x I C x d t
t 1 t 3 2% V CE
t
t 1 t 2 t 3 t 4
Figure B.
**----- End of picture text -----**
**==> picture [153 x 99] intentionally omitted <==**
**----- Start of picture text -----**
I,V
dI F /dt Qt rrrr== Qt aa++ tQ b b
a b
Q a Q b
dI
**----- End of picture text -----**
Figure C. **Definition of diode switching characteristics**
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**
t
**----- End of picture text -----**
**==> picture [169 x 63] intentionally omitted <==**
Figure D.
**==> picture [7 x 4] intentionally omitted <==**
**----- Start of picture text -----**
CC
**----- End of picture text -----**
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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IGD10N65T6
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP™�IGBT6
## **Revision�History**
IGD10N65T6
## **Revision:�2020-04-29,�Rev.�2.3**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2020-03-16|Final Data sheet|
|2.2|2020-04-20|Final|
|2.3|2020-04-29|Final|
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## **Trademarks**
## party.
## **Warnings**
## Links
- [View this product on Novapart](https://novapart.co/products/IGD10N65T6ARMA1/igbt-23-a-15-v-75-w-650-to-252-dpak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/igd10n65t6arma1/igbt-650v-23a-75w-to-252/dp/3648087)
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