# IGBT, 12 A, 1.5 V, 88 W, 600 V, TO-252 (DPAK), 3 Pins

![Product image](https://novapart.co/image/farnell:2725778/)

**URL**: https://novapart.co/products/IGD06N60TATMA1/igbt-12-a-15-v-88-w-600-to-252-dpak-3-pins
**SKU**: IGD06N60TATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.2700
**Stock**: 1000+
**Lead Time**: 141 days (indicative)

## Description

DC Collector Current:12A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:88W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No. of Pi

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP™ |
| Power Dissipation | 88W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-252 (DPAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 12A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725778/)

TRENCHSTOP™ Series 

## Gofineo ~~n~~ 

## IGD06N60T 

## Low Loss IGBT: IGBT in TRENCHSTOP™ and Fieldstop technology 

@ we Gyoecn 

## **Features:** 

- Very low _V_ CE(sat) 1.5 V (typ.) 

- Maximum Junction Temperature 175°C 

- Short circuit withstand time 5s 

- TRENCHSTOP™ and Fieldstop technology for 600V applications offers : 

- very tight parameter distribution - high ruggedness, temperature stable behavior 

- Low EMI  Qualified according to JEDEC[1] for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ ~~—~~ 

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C<br>G<br>E<br>PG-TO252-3   (D-PAK)<br>**----- End of picture text -----**<br>


**Applications:** 

- Variable Speed Drive for washing machines and air conditioners 

- Buck converters 

|**Type**|**_V_CE**|**_I_C;Tc=100°C **|**_V_CE(sat****_),Tj=25°C_ **|**_T_j,max**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IGD06N60T|600V|6A|1.5V|175C|G06T60|PG-TO252-3|



|**Parameter**|**Symbol**<br>~~es~~|**Value**<br>~~es~~|**Unit**|
|---|---|---|---|
|Collector-emitter voltage,_T_j≥ 25C|_V_C E<br>~~ft~~|600<br>~~ft~~|V|
|DC collector current, limited by_T_jmax<br>C= 25C<br>C= 100C|_I_C<br>~~ft~~|12<br>6<br>~~ft~~|A|
|Pulsed collector current,_t_plimited by _T_jmax|_I_Cpul s<br>~~ft~~<br>~~es~~|18<br>~~ft~~<br>~~es~~||
|Turn off safe operating area,_V_CE= 600V,_T_j= 175C,_t_p= 1µs|_-_<br>~~es~~|18<br>~~es~~||
|Gate-emitter voltage|_V_G E<br>~~es~~|20<br>~~es~~|V|
|Short circuit withstand time2) <br>GE= 15V,_V_CC400V,_T_j 150C|_t_SC<br>~~es~~<br>~~ot~~|5<br>~~es~~<br>~~ot~~|s|
|Power dissipation<br>C= 25C|_P_t ot<br>~~fo~~|88<br>~~fo~~|W|
|perating junction temperature|_T_j<br>~~+~~|-40...+175<br>~~+~~|C|
|Storage temperature|_T_stg<br>~~+~~|-55...+150<br>~~+~~||
|Soldering temperature<br>reflow soldering, MSL1|~~ft~~|260<br>~~ft~~||



- 1 J-STD-020 and JESD-022 

> 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 

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IFAG IPC TD VLS 

IGD06N60T 

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## TRENCHSTOP™ Series 

## **Thermal Resistance** 

|**Thermal Resistance**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Max. Value**|**Unit**|
|**Characteristic**|||||
|GBT thermal resistance,<br>unction – case|_R_t hJC||1.7|K/W|
|Thermal resistance,<br>unction – ambient|_R_t hJA||62||



## **Electrical Characteristic,** at _T_ j = 25 C, unless otherwise specified 

|**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**Static Characteristic**|||||||
|Collector-emitter breakdown voltage|_V_( BR )C ES|_V_G E=0V,<br>_I_C=0.25mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_C E( sat )|_V_G E= 15V,_I_C=6A<br>_T_j=25C<br>_T_ j=175C|-<br>-|1.5<br>1.8|2.05||
|Gate-emitter threshold voltage|_V_G E( t h)|_I_C=0.18mA,<br>_V_C E=_V_G E|4.1|4.6|5.7||
|Zero gate voltage collector current|_I_CE S|_V_C E=600V,<br>_V_G E=0V<br>_T_j=25C<br>_T_j=175C|-<br>-|-<br>-|40<br>700|µA|
|Gate-emitter leakage current|_I_GE S|_V_C E=0V,_V_G E=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_C E=20V,_I_C=6A|-|3.6|-|S|
|ntegratedgate resistor|_RG int_|||none||Ω|
|**Dynamic Characteristic**|||||||
|nput capacitance|_C_i ss|_V_C E=25V,<br>_V_G E=0V,<br>_f_=1MHz|-|368|-|pF|
|Output capacitance|_C_os s||-|28|-||
|Reverse transfer capacitance|_C_rs s||-|11|-||
|Gate charge|_Q_Gat e|_V_C C=480V,_I_C=6A<br>_V_G E=15V|-|42|-|nC|
|nternal emitter inductance<br>measured 5mm(0.197 in.)from case|_L_E||-|7|-|nH|
|Short circuit collector current1)|_I_C( SC )|_V_G E=15V,_t_SC5s<br>_V_C C= 400V,<br>_T_j=  25C|-|55|-|A|



1) Allowed number of short circuits: <1000; time between short circuits: >1s. 

Rev. 2.2, 20.09.2013 

2 

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IGD06N60T 

TRENCHSTOP™ Series 

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## **Switching Characteristic, Inductive Load,** at _T_ j=25 C 

|**arameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ. **|**max.**||
|**GBT Characteristic**|||||||
|urn-on delaytime|_t_d( o n)|_T_j=25C,<br>_V_C C=400V,_I_C=6A,<br>_V_G E=0/15V,_r_G=23,<br>_L_=60nH,_C_=40pF<br>_L_,_C_from Fig. E<br>Energy losses include<br>“tail” and diode reverse<br>recovery.<br>Diode used IDP06E60|-|9|-|ns|
|Rise time|_t_r||-|6|-||
|urn-off delaytime|_t_d( of f)||-|130|-||
|all time|_t_f||-|58|-||
|urn-on energy|_E_o n||-|0.09|-|mJ|
|urn-off energy|_E_o ff||-|0.11|-||
|otal switching energy|_E_t s||-|0.2|-||



## **Switching Characteristic, Inductive Load,** at _T_ j=175 C 

|**arameter**|**Symbol**|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ. **|**max.**||
|**GBT Characteristic**|||||||
|urn-on delaytime|_t_d( o n)|_T_j=175C,<br>_V_C C=400V,_I_C=6A,<br>_V_G E=0/15V,_r_G= 23<br>_L_=60nH,_C_=40pF<br>_L_,_C_from Fig. E<br>Energy losses include<br>“tail” and diode reverse<br>recovery.<br>Diode used IDP06E60|-|9|-|ns|
|Rise time|_t_r||-|8|-||
|urn-off delaytime|_t_d( of f)||-|165|-||
|all time|_t_f||-|84|-||
|urn-on energy|_E_o n||-|0.14|-|mJ|
|urn-off energy|_E_o ff||-|0.18|-||
|otal switching energy|_E_t s||-|0.335|-||



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## TRENCHSTOP™ Series 

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18A<br>15A<br>T C=80°C<br>12A<br>9A T C=110°C<br>6A Ic<br>3A<br>I c<br>0A<br>100Hz 1kHz 10kHz 100kHz<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>


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t p=1µs<br>10A<br>5µs<br>10µs<br>50µs<br>1A<br>500µs<br>5ms<br>DC<br>0,1A<br>1V 10V 100V 1000V<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>


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f , SWITCHING FREQUENCY<br>**----- End of picture text -----**<br>


**Figure 1. Collector current as a function of** 

**switching frequency** 

( _T_ j  175C, _D =_ 0.5, _V_ CE = 400V, 

_V_ CE, COLLECTOR-EMITTER VOLTAGE 

**Figure 2. Safe operating area** ( _D =_ 0, _T_ C = 25C, _T_ j 175C; _V_ GE=0/15V) 

_V_ GE = 0/15V, _r_ G = 23) 

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80W<br>60W<br>40W<br>20W<br>0W<br>25°C 50°C 75°C 100°C 125°C 150°C<br>POWER DISSIPATION<br>tot,<br>P<br>**----- End of picture text -----**<br>


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15A<br>10A<br>5A<br>0A<br>25°C 75°C 125°C<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br>


_T_ C, CASE TEMPERATURE 

**Figure 3. Power dissipation as a function of case temperature** ( _T_ j  175C) 

_T_ C, CASE TEMPERATURE 

**Figure 4. Collector current as a function of** 

**case temperature** 

( _V_ GE  15V, _T_ j  175C) 

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## TRENCHSTOP™ Series 

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**----- Start of picture text -----**<br>
15A 15A<br>V GE =20V V GE =20V<br>12A 15V 12A 15V<br>13V 13V<br>9A 11V 9A 11V<br>9V 9V<br>6A 7V 6A 7V<br>3A 3A<br>0A 0A<br>0V 1V 2V 3V 0V 1V 2V 3V<br>V CE, COLLECTOR-EMITTER VOLTAGE V CE, COLLECTOR-EMITTER VOLTAGE<br>COLLECTOR CURRENT COLLECTOR CURRENT<br>,  ,<br>I C I C<br>**----- End of picture text -----**<br>


**Figure 5. Typical output characteristic** ( _T_ j = 25°C) 

**Figure 6. Typical output characteristic** ( _T_ j = 175°C) 

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IC =12A<br>15A 2,5V<br>12A 2,0V<br>IC =6A<br>9A 1,5V<br>6A 1,0V I C =3A<br>3A T J=175°C 0,5V<br>25°C<br>0A 0,0V<br>0V 2V 4V 6V 8V 10V -50°C 0°C 50°C 100°C<br>V GE, GATE-EMITTER VOLTAGE T J, JUNCTION TEMPERATURE<br>Figure 7. Typical transfer characteristic  Figure 8. Typical collector-emitter<br>(VCE=20V) saturation voltage as a function of<br>EMITT SATURATION VOLTAGE<br>-<br>COLLECTOR CURRENT<br>,<br>I C<br>COLLECTOR<br>CE(sat),<br>V<br>**----- End of picture text -----**<br>


**Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature** ( _V_ GE = 15V) 

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## TRENCHSTOP™ Series 

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**----- Start of picture text -----**<br>
t<br>d(off)<br>100ns<br>t f<br>t<br>d(on)<br>t r<br>10ns<br>1ns<br>    <br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
t d(off)<br>t f<br>100ns<br>t<br>d(on)<br>10ns<br>t r<br>1ns<br>0A 3A 6A 9A 12A 15A<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br>


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IC , COLLECTOR CURRENT<br>**----- End of picture text -----**<br>


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R G, GATE RESISTOR<br>**----- End of picture text -----**<br>


**Figure 9. Typical switching times as a function of collector current** (inductive load, _T_ J=175°C, _V_ CE = 400V, VGE = 0/15V, _r_ G = 23Ω, Dynamic test circuit in Figure E) 

**Figure 10. Typical switching times as a function of gate resistor** (inductive load, _T_ J=175°C, 

- _V_ CE = 400V, VGE = 0/15V, _I_ C = 6A, Dynamic test circuit in Figure E) 

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100ns t d(off)<br>t f<br>t<br>d(on)<br>10ns<br>t r<br>1ns<br>50°C 100°C 150°C<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
T J, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br>


- **Figure 11. Typical switching times as a function of junction temperature** (inductive load, _V_ CE = 400V, VGE = 0/15V, _I_ C = 6A, _r_ G = 23Ω, Dynamic test circuit in Figure E) 

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6V<br>5V max.<br>4V typ.<br>3V<br>min.<br>2V<br>1V<br>0V<br>-50°C 0°C 50°C 100°C 150°C<br>EMITT TRSHOLD VOLTAGE<br>-<br>GATE<br>GE(th ) ,<br>V<br>**----- End of picture text -----**<br>


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T J, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br>


**Figure 12. Gate-emitter threshold voltage as a function of junction temperature** ( _I_ C = 0.18mA) 

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## TRENCHSTOP™ Series 

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*)  E on  and  E ts  include losses<br>0,6 mJ    due to diode recovery<br>0,5 mJ E ts *<br>0,4 mJ<br>0,3 mJ E off<br>0,2 mJ E on *<br>0,1 mJ<br>0,0 mJ 0A 2A 4A 6A 8A 10A<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
*)  E on and  E ts include losses<br>   due to diode recovery E ts *<br>0,4 mJ<br>0,3 mJ E on *<br>0,2 mJ E off<br>0,1 mJ<br>0,0 mJ<br>   <br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br>


## _IC_ , COLLECTOR CURRENT 

- **Figure 13. Typical switching energy losses as a function of collector current** (inductive load, _T_ J=175°C, _V_ CE=400V, VGE=0/15V, _r_ G=23Ω, Dynamic test circuit in Figure E) 

## _R_ G, GATE RESISTOR 

## **Figure 14. Typical switching energy losses as a function of gate resistor** (inductive load, _T_ J=175°C, 

- _V_ CE = 400V, VGE = 0/15V, _I_ C = 6A, Dynamic test circuit in Figure E) 

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**----- Start of picture text -----**<br>
*)  E on and  E ts include losses  *)  E on and  E ts include losses<br>    due to diode recovery<br>    due to diode recovery<br>0,4mJ 0,5mJ<br>E ts*<br>0,4mJ<br>0,3mJ<br>E ts* 0,3mJ E off<br>0,2mJ<br>0,2mJ<br>E off E on*<br>0,1mJ<br>0,1mJ<br>E on*<br>0,0mJ 0,0mJ<br>50°C 100°C 150°C 200V 300V 400V 500V<br>T J, JUNCTION TEMPERATURE VCE , COLLECTOR-EMITTER VOLTAGE<br>SWITCHING ENERGY LOSSES SWITCHING ENERGY LOSSES<br>,  ,<br>E E<br>**----- End of picture text -----**<br>


## **Figure 15. Typical switching energy losses as a function of junction temperature** 

- (inductive load, _V_ CE=400V, VGE = 0/15V, _I_ C = 6A, _r_ G = 23Ω, Dynamic test circuit in Figure E) 

**Figure 16. Typical switching energy losses as a function of collector emitter voltage** 

- (inductive load, _T_ J = 175°C, VGE = 0/15V, _I_ C = 6A, _r_ G = 23Ω, Dynamic test circuit in Figure E) 

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## TRENCHSTOP™ Series 

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**----- Start of picture text -----**<br>
15V<br>120V<br>10V<br>480V<br>5V<br>0V<br>0nC 10nC 20nC 30nC 40nC 50nC<br>EMITTER VOLTAGE<br>-<br>GATE<br>,<br>GE<br>V<br>**----- End of picture text -----**<br>


_Q_ GE, GATE CHARGE 

**Figure 17. Typical gate charge** ( _I_ C = 6 A) 

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**----- Start of picture text -----**<br>
1nF<br>C iss<br>100pF<br>C oss<br>C rss<br>10pF<br>0V 10V 20V<br>CAPACITANCE<br>c,<br>**----- End of picture text -----**<br>


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V CE, COLLECTOR-EMITTER VOLTAGE<br>**----- End of picture text -----**<br>


**Figure 18. Typical capacitance as a function of collector-emitter voltage** ( _V_ GE=0V, _f_ = 1 MHz) 

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**----- Start of picture text -----**<br>
80A<br>60A<br>40A<br>20A<br>0A<br>12V 14V 16V 18V<br>COLLECTOR CURRENT<br>, short circuit<br>I C(sc)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V GE, GATE-EMITTETR VOLTAGE<br>**----- End of picture text -----**<br>


**Figure 19. Typical short circuit collector current as a function of gateemitter voltage** 

( _V_ CE  400V, _T_ j  150C) 

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12µs<br>10µs<br>8µs<br>6µs<br>4µs<br>2µs<br>0µs<br>10V 11V 12V 13V 14V<br>SHORT CIRCUIT WITHSTAND TIME<br>t SC,<br>**----- End of picture text -----**<br>


_V_ GE, GATE-EMITETR VOLTAGE 

**Figure 20. Short circuit withstand time as a** 

**function of gate-emitter voltage** ( _V_ CE=400V _,_ start at _T_ J _=_ 25°C, _T_ Jmax<150°C) 

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## TRENCHSTOP™ Series 

## IGD06N60T 

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**----- Start of picture text -----**<br>
10 0K/W D =0.5<br>0.2<br>R , ( K / W )  ,   ( s )<br>0.3837  5.047*10 [-2]<br>0.1 0.4533  4.758*10 [-3 ]<br>0.5877  4.965*10 [-4]<br>10 -1K/W 0.05 R 01.2483 4.717*1 R 0 2 [-5]<br>0.02<br>0.01 C 1 = 1 / R 1 C 2 = 2 / R 2<br>single pulse<br>10 -2K/W<br>1µs 10µs 100µs 1ms 10ms 100ms<br>t P, PULSE WIDTH<br>TRANSIENT THERMAL IMPEDANCE<br>,<br>thJC<br>Z<br>**----- End of picture text -----**<br>


**Figure 21. IGBT transient thermal impedance** ( _D = t_ p / _T_ ) 

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## IGD06N60T 

## TRENCHSTOP™ Series 

**Figure A. Definition of switching times** 

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**----- Start of picture text -----**<br>
i,v<br>di F /dt t r r =t S + t F<br>So Q r r =Q S + Q F<br>t<br>r r<br>I F t S t F<br>—  —+<br>I Q S Q F 10%  I r r m t<br>r r m 90%  I di r r /dt V R<br>r r m<br>Figure C. Definition of diodes<br>switching characteristics<br>1 2 n<br>r1 r 2 r n<br>T (t)j<br>p(t) r1 r 2 r n<br>T C<br>**----- End of picture text -----**<br>


**Figure D. Thermal equivalent circuit** 

**Figure B. Definition of switching losses** 

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**Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2018. All Rights Reserved.** 

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## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

Rev. 2.2, 20.09.2013 

12 

IFAG IPC TD VLS 



## Links

- [View this product on Novapart](https://novapart.co/products/IGD06N60TATMA1/igbt-12-a-15-v-88-w-600-to-252-dpak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/igd06n60tatma1/transistor-igbt-600v-12a-to-252/dp/2725778)
---

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