# IGBT, 40 A, 1.35 V, 125 W, 650 V, TO-263 (D2PAK), 3 Pins

![Product image](https://novapart.co/image/farnell:3267609/)

**URL**: https://novapart.co/products/IGB20N65S5ATMA1/igbt-40-a-135-v-125-w-650-to-263-d2pak-3-pins
**SKU**: IGB20N65S5ATMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.5330
**Stock**: 1000+
**Lead Time**: 141 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Product Range | TRENCHSTOP 5 |
| Power Dissipation | 125W |
| Transistor Mounting | Surface Mount |
| Transistor Case Style | TO-263 (D2PAK) |
| Operating Temperature Max | 175°C |
| Continuous Collector Current | 40A |
| Collector Emitter Voltage Max | 650V |
| Collector Emitter Saturation Voltage | 1.35V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3267609/)

## IGB20N65S5 

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TRENCHSTOP [TM]<br>**----- End of picture text -----**<br>


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Features and Benefits: C<br>High speed S5 technology offering<br>* High speed smooth switching device for hard & soft switching<br>« Very Low V CEsat , 1.35V at nominal current<br>¢ Plug and play replacement of previous generation IGBTs<br>* 650V breakdown voltage G<br>* Low gate charge Q G E<br>* Maximum junction temperature 175°C<br>¢ Pb-free lead plating; ROHS compliant<br>*« Complete product spectrum and PSpice Models: C<br>http://www.infineon.com/igbt/<br>Applications:<br>026<br>* Industrial SMPS oe<br>¢* WeldingIndustrial UPS a- : —<br>¢ Chargers f af<br>G<br>Product Validation: E<br>**----- End of picture text -----**<br>


|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IGB20N65S5|650V|20A|1.35V|175°C|G20ES5|PG-TO263-3|



Datasheet www.infineon.com 

2017-05-19 

IGB20N65S5 

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## High�speed�switching�series�fifth�generation 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 

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## High�speed�switching�series�fifth�generation 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_C||40.0<br>28.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||80.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||80.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||125.0<br>62.5|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|



## **Thermal�Resistance** 

|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-C)||-|-|1.20|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.50<br>1.60|1.70<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.20mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1400|50<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=20.0A|-|28.0|-|S|



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## High�speed�switching�series�fifth�generation 

## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1200|-|pF|
|Output capacitance|_C_oes||-|24|-||
|Reverse transfer capacitance|_C_res||-|5|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=20.0A,<br>_V_GE=15V|-|48.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=20.0Ω,_R_G(off)=20.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|13|-|ns|
|Rise time|_t_r||-|14|-|ns|
|Turn-off delaytime|_t_d(off)||-|115|-|ns|
|Fall time|_t_f||-|22|-|ns|
|Turn-on energy|_E_on||-|0.36|-|mJ|
|Turn-off energy|_E_off||-|0.15|-|mJ|
|Total switchingenergy|_E_ts||-|0.51|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=20.0Ω,_R_G(off)=20.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|12|-|ns|
|Rise time|_t_r||-|8|-|ns|
|Turn-off delaytime|_t_d(off)||-|129|-|ns|
|Fall time|_t_f||-|22|-|ns|
|Turn-on energy|_E_on||-|0.19|-|mJ|
|Turn-off energy|_E_off||-|0.08|-|mJ|
|Total switchingenergy|_E_ts||-|0.27|-|mJ|



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## High�speed�switching�series�fifth�generation 

## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=20.0Ω,_R_G(off)=20.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|13|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|140|-|ns|
|Fall time|_t_f||-|48|-|ns|
|Turn-on energy|_E_on||-|0.48|-|mJ|
|Turn-off energy|_E_off||-|0.27|-|mJ|
|Total switchingenergy|_E_ts||-|0.75|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=20.0Ω,_R_G(off)=20.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|11|-|ns|
|Rise time|_t_r||-|9|-|ns|
|Turn-off delaytime|_t_d(off)||-|155|-|ns|
|Fall time|_t_f||-|52|-|ns|
|Turn-on energy|_E_on||-|0.26|-|mJ|
|Turn-off energy|_E_off||-|0.15|-|mJ|
|Total switchingenergy|_E_ts||-|0.41|-|mJ|



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45<br>120 a<br>40<br>110<br>100 PN SS IT 35 Ae \<br>90<br>ef] Ne 30 |<br>SS 80 PK<br>25<br>ef 70 ee<br>2 60 N s \<br>t 20 | |EK<br>50<br>ee eee<br>15<br>ef 40 |iN fs |<br>30 PR 10 fe<br>20<br>PNP<br>5<br>10<br>Oa<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>80 80<br>VGE=19V VGE=19V<br>18V 18V<br>70 70<br>| (eee ee<br>16V 16V<br>ee 60 15V |eee 60 15V ee<br>12V 12V<br>50 10V 50 10V<br>8V 8V<br>40 40<br>7V 7V<br>6V 6V<br>30 30<br>20 20<br>i) 2 aa<br>10 fe)ifhee ee) 10 ePeeee<br>0  Ae e e 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>


Figure 3. Typical ( _T_ vj=25°C) 

Figure 4. Typical ( _T_ vj=175°C) 

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80<br>Tj=25°C<br>Tj=150°C<br>70<br>60<br>Pa<br>Z 50<br>=) /<br>rs) /<br>ow 40<br>Ww<br>30<br>.<br>20<br>/<br>/<br>/<br>10<br>0<br>4 5 6 7 8 9 10<br>V GE , GATE-EMITTER VOLTAGE [V]<br>I C<br>**----- End of picture text -----**<br>


Figure 5. Typical ( _V_ CE=20V) 

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3.0<br>IC=6A<br>IC=10A<br>IC=20A<br>2.5 IC=40A<br>z<br>Oo<br>ll<br>2.0<br>rE<br>3<br>Ww<br>E<br>E 1.5<br>ad<br>1.0<br>_<br>O<br>O~<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>CEsat<br>V<br>**----- End of picture text -----**<br>


Figure 6. Typical a function ( _V_ GE=15V) 

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**----- Start of picture text -----**<br>
1000 a SS ES SS ES 1000 a a<br>| 1 td(off) ee a ee es ee | td(off) a ee ee ee<br>I tf ne ee es eee | tf po<br>td(on) td(on)<br>tr tr<br>Fb F he<br>| a ee | p o<br>Pot | tT e ee<br>= 100 a = 100 ae as<br>ip) a ee! ip) a ee es<br>uw a a a Chel a a<br>= po RL TT = a ee ee ee ee<br>- a a a eeeee ee a es es el ee ee<br>Q a eeee ee eeeeee ee<br>= ec<br>eeeE Z E eeey |<br>2)° 10 aa aSS 2)° 10 eea a ee<br>a a ee es<br>po a a<br>a po<br>ee ee a<br>Po | | | | dT a<br>1 1<br>0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, R G=20 Ω , Dynamic test circuit in V GE =0/15V, I C =20A, Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>


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1000 6.0<br>1 H td(off) a a a |— typ. |<br>I tf 5.5<br>I td(on) a eeee ee ee eee _<br>tr<br>| p o W<br>5.0<br>a ee ee Kk<br>4.5<br>—2 100 -——— p g5 ef<br>ip) se i<br>im poa a a (e) 4.0<br>= a a LL<br>F a ee Wy<br>3.5<br>OQ=22Sa_ — ee ee ee k-ae——ae————<br>3.0<br>10<br>7 a 2.5<br>eepo ee Ww eee<br>ee<br>a eseo) 2.0<br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 25 50<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
6.0<br>typ.<br>|— |<br>5.5<br>_<br>W<br>5.0<br>Kk<br>4.5<br>5 ef<br>i<br>(e) 4.0<br>LL<br>Wy<br>3.5<br>k-ae——ae———— ee<br>3.0<br>2.5<br>Ww eee eee<br>2.0<br>1.5<br>1.0<br>25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C]<br>GE(th)<br>V<br>**----- End of picture text -----**<br>


Figure 9. 

Figure 10. 

(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =20A, _R_ G=20 , Dynamic test circuit Figure E) 

( _I_ C=0.2mA) 

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**----- Start of picture text -----**<br>
5.0 1.2<br>Eoff Eoff<br>4.5 Eon Eon<br>Ets Ets<br>/<br>/ 1.0<br>or) 4.0 Frl it tl).or) -=<br>9) / n ver<br>Ww 3.5 ; Ww oa<br>7)nO // 7)9) 0.8 ooo -<br>a 3.0 a Les<br>> / 25 aa<br>o / - _ a<br>nm 2.5 nm 0.6 a<br>9 2.0 / J 9 a_—<br>0.4<br>eee<br>1.5<br>R ae: —<br>E 7 / y aw PeE _<br>. 7 .<br>1.0<br>0.2<br>0.5 Eee2ecanne“ae7 oo L Z|<br>0.0 0.0<br>0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,=400V,<br>V GE =0/15V, R G=20 Ω , Dynamic test circuit in V GE =0/15V, I C =20A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,=400V,<br>V GE =0/15V, I C =20A, Dynamic test<br>8 Figure E)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
0.9 1.2<br>Eoff Eoff<br>Eon Eon<br>0.8 Ets Ets<br>1.0<br>> 0.7 |.<br>& |aeler],& ay<br>Lu Pra Lu Y“<br>io)(op) 0.6 “7 = ep)ip) 0.8 4 Zz<br>ro) a7 e)<br>_ was _ —<br>0.5<br>—— LU Z<br>0.6<br>Ww 0.4 —_— —_ Ww uw 7 y Za<br>oO -_— oO “ a<br>Zz Zz “ 2<br>5 0.3 0.4<br>=<br>j ae EO ><br>ie 0.2 sd “ 2 —<br>“ | “ —<br>0.2<br>eee ee<br>0.1<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>


Figure 13. 

Figure 14. 

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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=0/15V, (inductive load, T vj =150°C, V GE=0/15V,<br>I C =20A, R G=20 , Dynamic test circuit in I C =20A, R G=20 , Dynamic test circuit in<br>Figure E) Figure E)<br>16 1E+4<br>130V Cies<br>520V / i Coes a<br>14 Sn |  ee I| Cres eea ee eeee eee e e<br>/ a e e ee ee ee<br>= / / ee<br>12 1000<br>= a ee ee e s<br>oO —_ a es<br><x LL Ca es es<br>10 j 2 PR<br>ove<br>:= 8 Zz2 100 fej\ | | |<br>/ / O os<br>Lu / / = a ee<br>Ww 6 O a ee<br>O Nee<br>4 10<br>poa sree<br>2 a eeee<br>0 1<br>0 10 20 30 40 50 60 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>


Figure 15. Typical ( _I_ C=20A) 

Figure 16. 

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**----- Start of picture text -----**<br>
( V GE<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1<br>noe | tt fcc<br>QZ—O JN29CTLhfl ACCHommel<br>D=0.5<br>Wg Sa f ai 1<br>ao.LAL 0.1 TT 0.2 ail<br>z pe 0.10.05 Sn<br>ES CPi AT pe<br>0.02<br>LL6 ZALeo ee<br>0.01<br>F TA EET<br>2 “aT LC single pulse<br>0.01<br>F: AMICIPCoCMMI m ole, ost, !<br>Y | A i: 1 TT 2 TT 3 TE 4 PTO 5 oo 6 Tt<br>ri[K/W]: 0.014628 0.379807 0.573028 0.211451 0.018267 2.3E-3<br>τ i[s]: 1.5E-5 3.4E-4 2.4E-3 0.013923 0.197253 2.48511<br>0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s]<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>


> Figure 17. IGBT ( _D_ = _t_ p/T) 

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## High�speed�switching�series�fifth�generation 

## **Package Drawing PG-TO263-3** 

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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||



Datasheet 

V�2.1 2017-05-19 

IGB20N65S5 

**==> picture [86 x 38] intentionally omitted <==**

## High�speed�switching�series�fifth�generation 

## **Testing Conditions** 

**==> picture [252 x 588] intentionally omitted <==**

**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE t<br>I C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


**==> picture [189 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C.  Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>


**==> picture [7 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>


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Figure D. 

**==> picture [7 x 4] intentionally omitted <==**

**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>


Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

12 

V�2.1 2017-05-19 

Datasheet 

IGB20N65S5 

**==> picture [86 x 38] intentionally omitted <==**

## High�speed�switching�series�fifth�generation 

## **Revision�History** 

IGB20N65S5 

## **Revision:�2017-05-19,�Rev.�2.1** 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2017-05-19|Final data sheet|



13 

V�2.1 2017-05-19 

Datasheet 

## party. 

## **Warnings** 



## Links

- [View this product on Novapart](https://novapart.co/products/IGB20N65S5ATMA1/igbt-40-a-135-v-125-w-650-to-263-d2pak-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/igb20n65s5atma1/igbt-650v-40a-175deg-c-125w/dp/3267609)
---

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