# IGBT Module, Six Pack [Full Bridge], 100 A, 1.75 V, 515 W, 150 °C, Module

![Product image](https://novapart.co/image/farnell:3703566/)

**URL**: https://novapart.co/products/IFS100B12N3E4B31BOSA1/igbt-module-six-pack-full-bridge-100-a-175-v-515-w
**SKU**: IFS100B12N3E4B31BOSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €70.0900
**Stock**: 10+
**Lead Time**: 92 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | MIPAQ |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Solder |
| Power Dissipation | 515W |
| Igbt Configuration | Six Pack [Full Bridge] |
| Transistor Mounting | Panel |
| Dc Collector Current | 100A |
| Power Dissipation Pd | 515W |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 100A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3703566/)

IGBT-模块 IGBT-modules 

## IFS100B12N3E4_B31 

shunt 

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**----- Start of picture text -----**<br>
J<br>. . .<br>VCES = 1200V<br>IC nom = 100A / ICRM = 200A<br>**----- End of picture text -----**<br>


## **典型应用** 

- 电机传动 

- 伺服驱动器 

- 

- 

## **电气特性** 

- 低开关损耗 

- T vyjop = 

- • (i V CEsat 

- 

- T vjop = 

- • Low V CEsat 

## **机械特性** 

- 高功率周次和温度周次能力 

- • 绝缘的基板 • 铜基板 • 标封装 

- 

- 

- 

- 

1 

## 技术信息�/�Technical�Information 

## IGBT-模块 IGBT-modules IFS100B12N3E4_B31 

**==> picture [86 x 38] intentionally omitted <==**

**初步数据 Preliminary�Data** 

## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** 

|技术信息/TechnicalInformation<br>IFS100B12N3E4_B31<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:CM<br>approvedby:MS<br>dateofpublication:2013-03-06<br>revision:2.0<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj= 175°C<br>IC nom<br>100<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>200<br>A<br>总损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj= 175°C<br>Ptot<br>515<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,00<br>2,05<br>2,10<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 4,00 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,80<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>7,5<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>6,30<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,27<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>td on<br>0,16<br>0,17<br>0,18<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>tr<br>0,025<br>0,03<br>0,03<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>td off<br>0,37<br>0,45<br>0,48<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>tf<br>0,06<br>0,11<br>0,13<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, di/dt = 3700 A/µs (Tvj=150°C)<br>RGon= 1,6Ω<br>Eon<br>4,00<br>6,50<br>7,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, du/dt = 3400 V/µs (Tvj=150°C)<br>RGoff= 1,6Ω<br>Eoff<br>7,60<br>11,0<br>12,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>400<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,29<br>K/W<br>壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,086<br>K/W||



|preparedby:CM|dateofpublication:2013-03-06|
|---|---|
|approvedby:MS|revision:2.0|



2 

IGBT-模块 IGBT-modules IFS100B12N3E4_B31 

## 技术信息�/�Technical�Information 

**==> picture [86 x 38] intentionally omitted <==**

**初步数据 Preliminary�Data** 

## **二极管,逆变器�/�Diode,�Inverter** 

## **最大额定值�/�Maximum�Rated�Values** 

|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|100|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|200|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1550<br>1500|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 100 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||150<br>160<br>165||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 100 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||9,60<br>17,0<br>19,0||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 100 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||4,10<br>7,00<br>8,00||mJ<br>mJ<br>mJ|
|结－壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,50|K/W|
|壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,15||K/W|



## **电流取样电阻�/�Shunt** 

||||||||
|---|---|---|---|---|---|---|
|**电流取样电阻/Shunt**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|Tc= 20°C|R20||1,50||mΩ|
|温度系数(tcr)<br>Temperaturecoefficient(tcr)|20°C - 60°C|||< 30||ppm/K|
|电流取样电阻工作温度<br>Operationtemperatureshunt-resistor||Ttvjop|||200|°C|
|结－壳热阻<br>Thermalresistance;junktiontocase||RthJC|||8,7|K/W|



## **负温度系数热敏电阻�/�NTC-Thermistor** 

## **特征值�/�Characteristic�Values** 

|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||



|preparedby:CM|dateofpublication:2013-03-06|
|---|---|
|approvedby:MS|revision:2.0|



3 

IGBT-模块 IGBT-modules 

## IFS100B12N3E4_B31 

## **初步数据** 

|#R_<br>| Module|||||||||
|---|---|---|---|---|---|---|---|---|
|绝缘测试电压|RMS, f = 50 Hz, t = 1 min|VISOL||||2,5||kV|
|模块基板材料||||||Cu|||
|内部绝缘材料<br>Internal isolation|BAM (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|||||AI203|||
|爬电距离<br>Creepage distance|OASENS<br>ER R-BFA /terminal toheatsink<br>OASENS<br>ER R- HOSENS<br>KH<br>/terminal to terminal|||||10,0||mm|
|电气间隙<br>Clearance|OASENS<br>ER R-BFA /terminal toheatsink<br>OASENS<br>ER R- HOSENS<br>KH<br>/terminal to terminal|||||7,5||mm|
|相对电痕指数||CTI||||> 200|||
|||||min.||typ.|max.||
|壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||||0,009||K/W|
|杂散电感,模块||LsCE||||20||nH|
|模块引线电阻,端子-芯片|TC<br>-<br>°<br>ON<br>‘|RCC'+EE'||||1,80||mΩ|
|最大结温<br>在开关状态下温度<br>~~Maximum junction temperature~~<br>~~Temperature under switching conditions~~|~~EESE BZ) -4 BB / inverter, brake-chopper~~<br>~~TEBE Bel2)-4H AR / inverter, brake-chopper~~|Tvj max<br>175<br>Tvj op<br>-40<br>150<br>~~Pf fd~~<br>~~Ff |]~~||||||°C<br>°C|
|储存温度||Tstg||-40|||125|°C|
|模块安装的安装扭距<br>Mounting torque for modul mounting|**S**eeM5ARSEAR VAY OyA AET<br>crew M5<br>- Mounting according to valid application note|M||3,00||-|6,00|Nm|
|重量<br>Weight||G||||300||g|



4 

IGBT-模块 IGBT-modules 

## IFS100B12N3E4_B31 

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初步数据<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
I output C  characteristic CE) IGBT,Inverter (typical) I output C characteristic CE) IGBT,Inverter (typical)<br>VGE ESV Tvj =150°C<br>200 200<br>Tvj = 25°C VGE = 19V<br>180 Tvj = 125°C 180 VGE = 17V<br>E2 Tvj = 150°C a F VGE = 15V eo / / ’<br>VGE = 13V<br>160 ee 160 VGE = 11V<br>VGE = 9V<br>140 140<br>pt fta ve e | KAZd<br>120 Pt PE ee 120 L eeer |<br>ee<br>100 100<br>80 Be e e ee) 80 eeecee<br>60 60<br>ee ee ee J<br>ee ee<br>40 40<br>20 Pp; yt | tT | 20 Llgr<br>ee ee<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>se4FSCE IGBT, EAESS (FBZ) FFRIAR IGBT, WIS ( HAA)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC GE) Eon C off C)<br>VCE oy VGE woe Gon o16 Ω »,R Goff =1.6 Ω ,V CE =600V<br>200 24<br>Tvj = 25°C Eon, Tvj = 125°C<br>180 Tvj = 125°C 22 Eoff, Tvj = 125°C<br>EFL Tvj = 150°C OZ] FO Eon, Tvj = 150°C C<br>20 Eoff, Tvj = 150°C<br>nl se pf}<br>160<br>18<br>SGG00)<br>140<br>4000 16  peeeeeeae<br>eee<br>120<br>14<br>SRR /, PLae<br>100 12<br>80 See eee2 10 e eeee 2s a e<br>8<br>60<br>SCE] ee eet<br>6<br>SEY) eee<br>40<br>4<br>SOA) eS<br>20<br>é) 2 ger | | tt | tt<br>Per<br>0 | EE | | 0 COPE<br>5 6 7 8 9 10 11 12 13 0 20 40 60 80 100 120 140 160 180 200<br>VGE [V] IC [A]<br> [A]  [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


5 

IGBT-模块 IGBT-modules 

## IFS100B12N3E4_B31 

## **初步数据** 

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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =100A,V CE =600V<br>25 1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eoff, Tvj = 125°C H— SO E ee<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>20 Ee a | fl |]. a ETa a ee | oe | | th|<br>_ ee een<br>15<br>7 ST TT<br>oa ee eg 0,1 ea m<br>EAR od<br>10 “77“|ra PTDeey [Tee] ee |<br>B |<br>A<br>yt|<br>5<br>A A<br>i:    1    2    3    4<br>ri[K/W]:   0,0174   0,0957   0,0928   0,0841<br>Yi L$ τ i[s]:    0,01    0,02    0,05    0,1<br>0 0,01<br>0 2 4 6 8 10 12 14 16 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RiwZSLiF K IGBT, aes ( RBSOA ) LEG mE RS ewe ( BB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC CE) IF F)<br>VGE SVR Goff =1.6 Ω ,T vj =150°C a<br>250 200<br>IC, Modul Tvj = 25°C<br>IC, Chip 180 Tvj = 125°C<br>= F Tvj = 150°C e<br>200 160<br>140<br>150 120<br>100<br>100 80<br>60<br>50 40 af.<br>VA<br>20<br>p er<br>0 0<br>| || Et<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


6 

## $£743 IGBT-模块 IGBT-modules & / Technical IFS100B12N3E4_B31 Information 

## **初步数据** 

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**----- Start of picture text -----**<br>
Erec = f(I F) Erec =f(R G)<br>RGon 6 Ω ,V CE =600V IF = OO A.V CE = 600 V<br>12 Se | 10 |<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>10<br>8<br>8<br>6<br>mea Reet<br>6 Z|<br>ye 4 “EOE<br>4<br>x LEE<br>2<br>2<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16<br>IF [A] RG [ Ω ]<br>transientmAthermalRE impedanceESS Diode, Inverter RREABIARNTC-Thermistor-temperatureBA BEBE characteristic (typical)<br>ZthJC =f (t) R=f(T)<br>1 ee 100000 ee |<br>ZthJC : Diode Rtyp<br>a ll<br>a a [J p<br>PT TTT EET TTT es<br>eI es ee<br>PLATT Tet EIT TT ry.<br>INE AHN EIT EE 10000 N<br>/ ff ————————ye en = [Ee]<br>0,1 / PSE EEE<br>FP NN<br>PotrTa TARTAU TeCE ETT| ETT| 1000 aN————_————~~ eee<br>PVUUIEa aT LTTE TIE ||| ET) eeee ae rs<br>i:    1    2    3    4<br>ri[K/W]:   0,03   0,165   0,16   0,145<br>Tomo τ i[s]:    0,01   0,02    0,05   0,1    PEE<br>0,01 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>


7 

## 技术信息�/�Technical�Information 

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IGBT-模块 IGBT-modules IFS100B12N3E4_B31 

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**----- Start of picture text -----**<br>
初步数据<br>Preliminary�Data<br>**----- End of picture text -----**<br>


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接线图�/�circuit_diagram_headline<br>J<br>**----- End of picture text -----**<br>


## **封装尺寸�/�package�outlines** 

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prepared�by:�CM date�of�publication:�2013-03-06 approved�by:�MS revision:�2.0 

8 

IGBT-模块 IGBT-modules 

## IFS100B12N3E4_B31 

## **初步数据** 

## **使用条件和条款** 

## 使用条件和条款 

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保留产品规格书的修改权 

9 



## Links

- [View this product on Novapart](https://novapart.co/products/IFS100B12N3E4B31BOSA1/igbt-module-six-pack-full-bridge-100-a-175-v-515-w)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ifs100b12n3e4b31bosa1/igbt-module-1-2kv-100a-solder/dp/3703566)
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