# IGBT Module, Dual [Half Bridge], 450 A, 1.75 V, 150 °C, Module

![Product image](https://novapart.co/image/farnell:2986381/)

**URL**: https://novapart.co/products/IFF450B12ME4PB11BPSA1/igbt-module-dual-half-bridge-450-a-175-v-150-c
**SKU**: IFF450B12ME4PB11BPSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || IGBT Modules
**Price**: €168.0200
**Stock**: 10+
**Lead Time**: 162 days (indicative)

## Description

Transistor Polarity:Dual N Channel; DC Collector Current:450A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Trans

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Product Range | EconoDUAL 3 |
| Igbt Technology | IGBT 4 [Trench/Field Stop] |
| Igbt Termination | Press Fit |
| Power Dissipation | - |
| Igbt Configuration | Dual [Half Bridge] |
| Transistor Mounting | Panel |
| Transistor Polarity | Dual N Channel |
| Dc Collector Current | 450A |
| Power Dissipation Pd | - |
| Transistor Case Style | Module |
| Operating Temperature Max | 150°C |
| Junction Temperature Tj Max | 150°C |
| Continuous Collector Current | 450A |
| Collector Emitter Voltage Max | 1.2kV |
| Collector Emitter Voltage V(Br)Ceo | 1.2kV |
| Collector Emitter Saturation Voltage | 1.75V |
| Collector Emitter Saturation Voltage Vce(On) | 1.75V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2986381/)

## IFF450B12ME4P_B11 

EconoDUAL™3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC/ Strommesswiderstand 

J VCES = 1200V IC nom = 450A / ICRM = 900A 

- Hochleistungsumrichter 

- • Motorantriebe • Servoumrichter • USV-Systeme • Windgeneratoren 

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- CEsat 

- • T vj op = 150°C • VCEsat mit 

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   - CEsat 

   - • T vj op = • VCEsat 

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- Thermisches Interface Material bereits aufgetragen 

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**Digit** 

Datasheet www.infineon.com 

2017-12-01 

IFF450B12ME4P_B11 

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|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 65°C, Tvj max= 175°C|IC nom|450|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|900|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>IC= 450 A, VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,75<br>2,00<br>2,05|2,10|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 17,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,25|5,80|6,35|V|
|Gateladung<br>Gatecharge|VGE= -15 V ... +15 V|QG||3,30||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||1,7||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||28,0||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||1,55||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V, Tvj= 25°C|ICES|||3,0|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||400|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,17<br>0,19<br>0,19||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,05<br>0,05<br>0,06||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,37<br>0,46<br>0,49||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 450 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,08<br>0,18<br>0,20||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 450 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 7750 A/µs (Tvj= 150°C)<br>RGon= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||17,0<br>30,0<br>35,5||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 450 A, VCE= 600 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3350 V/µs (Tvj= 150°C)<br>RGoff= 0,62Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||36,0<br>54,0<br>60,0||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤10 µs,|ISC||1800||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,0959|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|



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IFF450B12ME4P_B11 

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## **Diode,�Wechselrichter�/�Diode,�Inverter** 

|**Diode,Wechselrichter/Diode,Inverter**|**Diode,Wechselrichter/Diode,Inverter**||||||
|---|---|---|---|---|---|---|
|**HöchstzulässigeWerte/MaximumRatedValues**|||||||
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|||V|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|450|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|900|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|28000<br>25000|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>IF= 450 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,80<br>1,75<br>1,70|2,35|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 450 A, - diF/dt = 7750 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||395<br>455<br>460||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 450 A, - diF/dt = 7750 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||50,0<br>84,5<br>98,5||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 450 A, - diF/dt = 7750 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||26,5<br>41,5<br>46,5||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,136|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
|**Strommesswiderstand/Shunt**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TH= 20°C|R20||0,33||mΩ|
|Temperaturkoeffizient<br>Temperaturecoefficient(tcr)|20°C - 60°C|||< 30||ppm/K|
|BelastbarkeitproShunt-Widerstand<br>Loadcapacitypershunt-resistor|TH= 80°C|P|||40|W|
|BetriebstemperaturShunt-Widerstand<br>Operationtemperatureshunt-resistor||Ttvjop|||200|°C|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proShunt-Widerstand/pershunt-resistor<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||3,0|K/W|



## **NTC-Widerstand�/�NTC-Thermistor** 

## **Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

3 

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Datasheet 

IFF450B12ME4P_B11 

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## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min|VISOL|2,5<br>|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||14,5<br>13,0<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||12,5<br>10,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TH=25°C,proSchalter/perswitch|RCC'+EE'||1,15||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Höchstzulässige<br>Bodenplattenbetriebstemperatur<br>Maximumbaseplateoperationtemperature||TBPmax|||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,0|-|6,0|Nm|
|Gewicht<br>Weight||G||345||g|



Lagerung und Transport von Modulen mit TIM => siehe AN2012-07 Storage and shipment of modules with TIM => see AN2012-07 

V�3.1 2017-12-01 

Datasheet 

4 

IFF450B12ME4P_B11 

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**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C 

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**----- Start of picture text -----**<br>
900 900<br>Tvj = 25°C VGE = 19V<br>Tvj = 125°C VGE = 17V<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>750 750 VGE = 11V<br>VGE = 9V<br>600 600<br>450 450<br>300 300<br>150 150<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V 

## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�0.62� Ω ,�RGoff�=�0.62� Ω ,�VCE�=�600�V 

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**----- Start of picture text -----**<br>
900 160<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eon, Tvj = 150°C<br>Tvj = 150°C 140 EEoffoff, T, Tvjvj = 125°C = 150°C<br>750<br>120<br>600<br>100<br>450 80<br>60<br>300<br>40<br>150<br>20<br>0 0<br>5 6 7 8 9 10 11 12 13 0 150 300 450 600 750 900<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJH =f (t)<br>VGE =+15V,1 C =450A,V CE =600V<br>120 1<br>Eon, Tvj = 125°C ZthJH : IGBT<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 125°C<br>Se Eoff, Tvj = 150°C . Se<br>100<br>WA |<br>80 0,1<br>PESE eo<br>Nee<br>60<br>afi eeu ati il<br>40 0,01<br>} Sa<br>ACect<br>20<br>i: 1 2 3 4<br>ri[K/W]: 0,005 0,036 0,039 0,0159<br>τ i[s]: 0,0013 0,0385 0,269 1,71<br>po UNTT<br>0 0,001 VT<br>0 1 2 3 4 5 6 7 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC CE)<br>VGE ee sy, R Goff =062 Ω ,T vj =150°C<br>1400 900<br>IC, Modul Tvj = 25°C<br>1300 I C , Chip Tvj = 125°C<br>Tvj = 150°C<br>a<br>1200<br>750<br>1100<br>1000<br>600<br>900<br>800<br>700 450<br>600<br>500<br>300 /<br>400<br>300<br>150<br>200<br>100<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE  [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A]  [A]<br>IC IF<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon =0.62 Ω ,V CE =600V IF =450A,V CE =600V<br>60 50<br>55 EErecrec,, T Tvvjj = 125°C = 150°C 45 E E rec rec , T , T vj vj  = 125°C  = 150 ° C<br>\<br>= \ |<br>\<br>50<br>\<br>40 N<br>45 ~ ™~s> ~~<br>35<br>~ ™<br>40<br>30 pO> ~™<br>35<br>30 25<br>25 7 } 20<br>20 /<br>15<br>/<br>15<br>10<br>10<br>5 Ae 5<br>0 0<br>0 150 300 450 600 750 900 0 1 2 3 4 5 6 7<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>


**==> picture [487 x 310] intentionally omitted <==**

**----- Start of picture text -----**<br>
ZthJH = f (t) R=f(T)<br>1 a ee eee 100000 a a a a a<br>HES ZthJH : Diode Hp Rtyp<br>ee ee a ee<br>0,1 10000<br>0,01 1000<br>i: 1 2 3 4<br>ri[K/W]: 0,0083 0,0626 0,047 0,0181<br>τ i[s]: 0,00118 0,0323 0,202 1,42<br>0,001 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TNTC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br>


Datasheet 

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IFF450B12ME4P_B11 

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## **Schaltplan�/�Circuit�diagram** 

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**----- Start of picture text -----**<br>
J<br>**----- End of picture text -----**<br>


## **Gehäuseabmessungen�/�Package�outlines** 

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**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>


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## **Trademarks** 

## **WARNHINWEIS** 

## **WARNINGS** 



## Links

- [View this product on Novapart](https://novapart.co/products/IFF450B12ME4PB11BPSA1/igbt-module-dual-half-bridge-450-a-175-v-150-c)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/iff450b12me4pb11bpsa1/igbt-mod-dual-n-ch-1-2kv-450a/dp/2986381)
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