# Intelligent Power Module (IPM), IGBT, 650 V, 30 A, 2 kV, DIP, CIPOS

![Product image](https://novapart.co/image/farnell:2986385/)

**URL**: https://novapart.co/products/IFCM30T65GDXKMA1/intelligent-power-module-ipm-igbt-650-v-30-a-2-kv
**SKU**: IFCM30T65GDXKMA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Intelligent Power Modules
**Price**: €7.8600
**Stock**: 10+
**Lead Time**: 204 days (indicative)

## Description

IPM Power Device:IGBT; Voltage Rating (Vces / Vdss):650V; Current Rating (Ic / Id):30A; Isolation Voltage:2kV; IPM Case Style:DIP; IPM Series:CIPOS; Product Range:-; SVHC:No SVHC (27-

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| Ipm Series | CIPOS |
| Product Range | CIPOS Mini |
| Ipm Case Style | DIP |
| Ipm Power Device | IGBT |
| Isolation Voltage | 2kV |
| Current Rating (Ic / Id) | 30A |
| Voltage Rating (Vces / Vdss) | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2986385/)

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## Control Integrated POwer System (CIPOS™) 

## IFCM30T65GD 

## Datasheet 

Please read the Important Notice and Warnings at the end of this document page 1 of 17 

Datasheet www.infineon.com 

V 2.2 2017-09-06 

Control Integrated POwer System (CIPOS™) IFCM30T65GD 

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## Table of contents 

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|||
|---|---|
|Table of contents ................................................................................................................................................... 2|
|CIPOS™ Control Integrated POwer System ............................................................................................................ 3|
|Features|.................................................................................................................................................................. 3|
|Target Applications ...................................................................................................................................................... 3|
|Description  .................................................................................................................................................................. 3|
|System Configuration .................................................................................................................................................. 3|
|Pin Configuration ................................................................................................................................................... 4|
|Internal Electrical Schematic ................................................................................................................................. 4|
|Pin Assignment ...................................................................................................................................................... 5|
|Pin Description ...................................................................................................................................................... 5|
|LIN(A, B) (IGBT control pins, Pin 8, 9) .......................................................................................................................... 5|
|VFO (Fault-output, Pin 12) ........................................................................................................................................... 6|
|NTC (Thermistor, Pin 15) ............................................................................................................................................. 6|
|ITRIP (Over current detection function, Pin 13) .......................................................................................................... 6|
|VDD, VSS (Control supply and reference, Pin 11, 14) .................................................................................................. 6|
|NA, NB (IGBT emitter, Pin 17, 19) ................................................................................................................................. 6|
|A, B (IGBT collector, Pin 18, 20) ................................................................................................................................... 6|
|DA, DB (Diode anode, Pin21, 22) .................................................................................................................................. 6|
|P (Positive output voltage, Pin23) ............................................................................................................................... 6|
|Absolute Maximum Ratings ................................................................................................................................... 7|
|Module Section ............................................................................................................................................................ 7|
|Power Section .............................................................................................................................................................. 7|
|Control Section ............................................................................................................................................................ 8|
|Recommended Operation Conditions ................................................................................................................... 8|
|Static Parameters .................................................................................................................................................. 9|
|Dynamic Parameters ........................................................................................................................................... 10|
|Thermistor ........................................................................................................................................................... 11|
|Mechanical Characteristics and Ratings .............................................................................................................. 11|
|Electrical characteristic ....................................................................................................................................... 14|
|Package Outline ................................................................................................................................................... 15|
|Revision history ................................................................................................................................................... 16|

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## CIPOS ™ 

## C ontrol I ntegrated PO wer S ystem 

_Dual In-Line Intelligent Power Module Two Phase Interleaved PFC 650V / 30A_ 

## Features 

Dual In-Line molded module 

- ™ 

- TRENCHSTOP 5 

- Rapid switching emitter controlled diode 

- Rugged SOI gate driver technology with stability against transient 

- Over current shutdown 

- Under-voltage lockout 

- All of 2 switches turn off during protection 

- Temperature monitor 

- Emitter pins accessible for all phase current monitoring (open emitter) 

- Lead-free terminal plating; RoHS compliant 

## Description 

The CIPOS ™ module family offers the chance for integrating various power and control components to increase reliability, optimize PCB size and system costs. 

It is designed to enhance the system efficiency by improvement of power factor. The package concept is specially adapted to power applications, which need good thermal conduction and electrical isolation, but also EMI-save control and overload protection. 

TRENCHSTOP ™ 5 are combined with an optimized SOI gate driver for excellent electrical performance. 

- Very low thermal resistance due to DCB 

## System Configuration 

## Target Applications 

- 2-Phase Interleaved PFC 

- 2-Phase Interleaved PFC with TRENCHSTOP ™ 5 and Rapid switching emitter controlled diode 

- SOI gate driver 

- Thermistor 

- Pin-to-heatsink clearance distance typ. 1.6mm 

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## Pin Configuration 

Bottom View 

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(24) NC<br>(1) NC<br>(2) NC<br>(23) P<br>(3) NC<br>(4) NC<br>(22) DA<br>(5) NC<br>(6) NC<br>(21) DB<br>(7) NC<br>(8) LIN(A) 3 (20) A<br>(9) LIN(B) =<br>(10) NC<br>(11) VDD (19) NA<br>(12) VFO<br>(13) ITRIP<br>(14) VSS (18) B<br>(15) NTC<br>(16) NC -<br>O (17) NB<br>**----- End of picture text -----**<br>


Figure 1 Pin configuration 

## Internal Electrical Schematic 

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(1) NC<br> (24) NC<br>(2) NC<br>(3) NC (23) P<br>(4) NC<br>(5) NC<br>(22) DA<br>'<br>(6) NC<br>|<br>(7) NC (21) DB<br>(8) LIN(A) LIN1<br>(9) LIN(B) | LIN2<br>(20) A<br>(10) NC<br>LO1<br>(11) VDD VDD<br>(12) VFO VFO (19) NA<br>(13) ITRIP ITRIP<br>—<br>(14) VSS VSS (18) B<br>(15) NTC LO2<br>(16) NC (17) NB<br>**----- End of picture text -----**<br>


Figure 2 Internal schematic 

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## Pin Assignment 

|Pin Number|Pin Name|Pin Description|
|---|---|---|
|1|NC|No Connection|
|2|NC|No Connection|
|3|NC|No Connection|
|4|NC|No Connection|
|5|NC|No Connection|
|6|NC|No Connection|
|7|NC|No Connection|
|8|LIN(A)|Aphase IGBTgate driver input|
|9|LIN(B)|Bphase IGBTgate driver input|
|10|NC|No Connection|
|11|VDD|Control supply|
|12|VFO|Fault output|
|13|ITRIP|Over current shutdown input|
|14|VSS|Control negative supply|
|15|NTC|Thermistor|
|16|NC|No Connection|
|17|NB|Bphase IGBT emitter|
|18|B|Bphase IGBT collector|
|19|NA|Aphase IGBT emitter|
|20|A|Aphase IGBT collector|
|21|DB|Bphase diode anode|
|22|DA|Aphase diode anode|
|23|P|Positive output voltage|
|24|NC|No Connection|



## Pin Description 

LIN(A, B) (IGBT control pins, Pin 8, 9) 

These pins are positive logic and they are responsible for the control of the integrated IGBT. The Schmitt-trigger input thresholds of them are such to guarantee LSTTL and CMOS compatibility down to 3.3V controller outputs. Pull-down resistor of about 5k  is internally provided to pre-bias inputs during supply start-up and a zener clamp is provided for pin protection purposes. Input Schmitt-trigger and noise filter provide beneficial noise rejection to short input pulses. 

The noise filter suppresses control pulses which are below the filter time _t_ FILIN. The filter acts according to Figure 4. 

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CIPOS<br>Schmitt-Trigger<br>INPUT NOISE<br>LIN FILTER<br> 5 k  UZ=10.5V<br>SWITCH LEVEL<br>VSS VIH; VIL<br>Figure 3 Input pin structure<br>a) t FILIN b) t FILIN<br>LIN LIN<br>high<br>LO low LO<br>**----- End of picture text -----**<br>


Figure 4 Input filter timing diagram 

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It is recommended for proper work of this product not to provide input pulse-width lower than 1 μ s. 

## VFO (Fault-output, Pin 12) 

The VFO pin indicates a module failure in case of under voltage at pin VDD or in case of triggered over current detection at ITRIP. 

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VDD CIPOS<br>RON,FLT From ITRIP - Latch<br>VFO<br>   1<br>VSS From UV detection<br>**----- End of picture text -----**<br>


VDD, VSS (Control supply and reference, Pin 11, 14) 

VDD is the control supply and it provides power both to input logic and to output power stage. Input logic is referenced to VSS ground. 

The under-voltage circuit enables the device to operate at power on when a supply voltage of at least a typical voltage of VDDUV+ = 12.1V is present. 

The IC shuts down all the gate drivers power outputs, when the VDD supply voltage is below VDDUV- = 10.4V. This prevents the external power switches from critically low gate voltage levels during on-state and therefore from excessive power dissipation. 

Figure 5 Internal circuit at pin VFO 

## NA, NB (IGBT emitter, Pin 17, 19) 

## NTC (Thermistor, Pin 15) 

The NTC pin provides direct access to thermistor, which is referenced to VSS. An external pull-up resistor connected to +5V ensures that the resulting voltage can be directly connected to the microcontroller. 

## ITRIP (Over current detection function, Pin 13) 

CIPOS ™ provides an over current detection function by connecting the ITRIP input with the IGBT collector current feedback. The ITRIP comparator threshold (typ. 0.47V) is referenced to VSS ground. An input noise filter (typ.: tITRIPMIN = 530ns) prevents the driver to detect false overcurrent events. 

Over current detection generates a shutdown of all outputs of the gate driver after the shutdown propagation delay of typically 1000ns. 

The IGBT emitters are available for current measurements of each phase. It is recommended to keep the connection to pin VSS as short as possible in order to avoid unnecessary inductive voltage drops. 

## A, B (IGBT collector, Pin 18, 20) 

These pins are IGBT collector. It is mandatory to connect anti-parallel diode between IGBT collector and emitter. 

## DA, DB (Diode anode, Pin21, 22) 

The diode anode should be externally connected with IGBT collector of each phase. 

## P (Positive output voltage, Pin23) 

The diode cathodes are connected to the output voltage. It is noted that the voltage does not exceed 450 V. 

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## Absolute Maximum Ratings 

(VDD = 15V and Tj = 25°C, if not stated otherwise) 

## Module Section 

|Module Section||||||
|---|---|---|---|---|---|
|Description|Condition|Symbol|Value||Unit|
||||min|max||
|Storage temperature range||Tstg|-40|125|°C|
|Isolation test voltage|RMS, f=60Hz, t=1min|VISOL|2000|-|V|
|Operating case temperature range|Refer to Figure 6|TC|-40|125|°C|



## Power Section 

|Power Section||||||
|---|---|---|---|---|---|
|Description|Condition|Symbol|Value||Unit|
||||min|max||
|DC link output voltage of P-N|Applied between P-N|VPN|-|450|V|
|DC link output voltage (surge) of<br>P-N|Applied between P-N|VPN(surge)|-|500|V|
|Max. blocking voltage|IC= 250µA|VCES|650|-|V|
|Repetitive peak reverse voltage|IR= 250µA|VRRM|650|-|V|
|Input RMS current of each phase|TJ≤ 150°C,<br>TC= 25°C<br>TC= 80°C|Ii|-<br>-|30<br>20|A|
|Maximum peak input current of<br>each phase|TJ≤ 150°C, TC= 25°C<br>less than 1ms, non-repetitive|Ii(peak)|-|80|A|
|Power dissipation of each IGBT||Ptot|-|60.4|W|
|Operating junction temperature<br>range||TJ|-40|150|°C|
|Single IGBT thermal resistance,<br>junction-case||RthJC|-|2.07|K/W|
|Single diode thermal resistance,<br>junction-case||RthJCD|-|2.69|K/W|



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## Control Section 

|Control Section||||||
|---|---|---|---|---|---|
|Description|Condition|Symbol|Value||Unit|
||||min|max||
|Module supply voltage||VDD|-1|20|V|
|Input voltage|LIN, ITRIP|VIN<br>VITRIP|-1<br>-1|10|V|
|Switching frequency||fPWM|-|60|kHz|



## Recommended Operation Conditions 

All voltages are absolute voltages referenced to VSS -potential unless otherwise specified. 

|Description|Symbol|Value|Value|Value|Unit|
|---|---|---|---|---|---|
|||min|typ|max||
|DC link output voltage of P-N|VPN|0|-|450|V|
|Control supply voltage|VDD|13.5|15|16.5|V|
|Control supply variation|ΔVDD|-1|-|1|V/µs|
|Logic input voltages LIN,ITRIP|VIN<br> VITRIP|0<br>0|-|5<br>5|V|
|Between VSS - N (including surge)|VSS|-5|-|5|V|



Figure 6 TC measurement point[1] 

1Any measurement except for the specified point in figure 6 is not relevant for the temperature verification and brings wrong or different information. Datasheet 8 of 17 

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## Static Parameters 

(VDD = 15V and Tj = 25°C, if not stated otherwise) 

|Description|Condition|Symbol||Value||Unit|
|---|---|---|---|---|---|---|
||||min|typ|max||
|Collector-Emitter saturation voltage|IC= 20A<br>TJ= 25°C<br>150°C|VCE(sat)|-<br>-|1.75<br>1.95|2.3<br>-|V|
|Diode forward voltage|IF= 20A<br>TJ= 25°C<br>150°C|VF|-<br>-|1.45<br>1.4|2.0<br>-|V|
|Collector-Emitter leakage current|VCE= 650V|ICES|-|-|1|mA|
|Diode reverse leakage current|VR= 650V|IR|-|-|1|mA|
|Logic "1" input voltage (LIN)||VIH|-|2.1|2.5|V|
|Logic "0" input voltage (LIN)||VIL|0.7|0.9|-|V|
|ITRIP positive going threshold||VIT,TH+|400|470|540|mV|
|ITRIP input hysteresis||VIT,HYS|40|70|-|mV|
|VDD supply under voltage positive<br>going threshold||VDDUV+|10.8|12.1|13.0|V|
|VDD supply under voltage negative<br>going threshold||VDDUV-|9.5|10.4|11.2|V|
|VDD supply under voltage lockout<br>hysteresis||VDDUVH|1.0|1.7|-|V|
|Quiescent VDD supply current|LIN= 0V|IQDD|-|370|900|µA|
|Input bias current|VIN= 5V|IIN+|-|1|1.5|mA|
|Input bias current|VIN= 0V|IIN-|-|2|-|µA|
|ITRIP input bias current|VITRIP= 5V|IITRIP+|-|65|150|µA|
|VFO input bias current|VFO = 5V, VITRIP= 0V|IFO|-|2|-|nA|
|VFO output  voltage|IFO= 10mA, VITRIP= 1V|VFO|-|0.5|-|V|



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## Dynamic Parameters 

(VDD = 15V and Tj = 25°C, if not stated otherwise) 

|Description|Condition|Symbol||Value||Unit|
|---|---|---|---|---|---|---|
||||min|typ|max||
|Turn-on propagation delay time|VLIN= 5V,<br>IC= 20A,<br>VDC= 400V|ton|-|610|-|ns|
|Turn-on rise time||tr|-|25|-|ns|
|Turn-on switching time||tc(on)|-|115|-|ns|
|Reverse recovery time||trr|-|90|-|ns|
|Turn-off propagation delay time|VLIN= 0V,<br>IC= 20A,<br>VDC= 400V|toff|-|700|-|ns|
|Turn-off fall time||tf|-|15|-|ns|
|Turn-off switching time||tc(off)|-|30|-|ns|
|Input filter time ITRIP|VITRIP= 1V|tITRIPmin|-|530|-|ns|
|Input filter time at LIN  for turn on<br>and off|VLIN= 0V & 5V|tFILIN|-|290|-|ns|
|Fault clear time after ITRIP-fault|VITRIP= 1V|tFLTCLR|40|-|-|µs|
|IGBT turn-on energy (includes reverse<br>recovery of diode)|VDC= 400V, IC= 20A<br>TJ=  25°C<br>150°C|Eon|-<br>-|550<br>705|-<br>-|µJ|
|IGBT turn-off energy|VDC= 400V, IC= 20A<br>TJ=  25°C<br>150°C|Eoff|-<br>-|95<br>125|-<br>-|µJ|
|Diode recovery energy|VDC= 400V, IC= 20A<br>TJ=  25°C<br>150°C|Erec|-<br>-|80<br>120|-<br>-|µJ|



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## Thermistor 

|Thermistor|||||||
|---|---|---|---|---|---|---|
|Description|Condition|Symbol|Value|||Unit|
||||min|typ|max||
|Resistor|TNTC= 25°C|RNTC|-|85|-|k|
|B-constant of NTC<br>(Negative Temperature Coefficient)||B(25/100)|-|4092|-|K|



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3500<br>35<br>3000 TT  Min.<br>| 30 ee Typ.<br>Max.<br>25<br>2500 Po 20 PNETRS EEC|<br>2000 15<br>10<br>1500 \ NEE [PANO}]<br>5<br>SE<br>1000 050 55 60 65 70 75 80 85 90 95 100 105 Prrn 110 —— 115 120 125 130<br>Thermistor temperature [ ℃ ]<br>500 \<br>0 PEESSEEEETT EE<br>-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130<br>Thermistor temperature [ ℃ ]<br>]<br>Ω<br>k<br>[<br>Thermistor resistance<br>]<br>Ω<br>Thermistor resistance [k<br>**----- End of picture text -----**<br>


Figure 7 Thermistor resistance – temperature curve and table 

(For more information, please refer to the application note ‘AN CIPOS **™** -Mini 1 Technical description’) 

## Mechanical Characteristics and Ratings 

|Description|Condition|Value|Value|Value|Unit|
|---|---|---|---|---|---|
|||min|typ|max||
|Mounting torque|M3 screw and washer|0.49|-|0.78|Nm|
|Flatness|Refer to Figure 8|-50|-|100|µm|
|Weight||-|6.58|-|g|



Figure 8 Flatness measurement position 

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## Circuit of a Typical Application 

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(1) NC  (24) NC<br>(2) NC<br>(23) P<br>(3) NC<br>(4) NC<br>(5) NC (22) DA<br>(6) NC<br>#1 (7) NC (21) DB<br>(8) LIN(A) LIN1<br>Micro (9) LIN(B) LIN2 (20) A #4<br>Controller 5 or 3.3V line VDD line ((10) NC11) VDD VDD LO1 #7<br>(19) NA<br>(12) VFO VFO<br>(13) ITRIP ITRIP<br>AC<br>(14) VSS VSS (18) B #5 #6<br>(15) NTC #7 ~<br><Signal for protection> LO2<br>(16) NC (17) NB<br>Temperature monitor<br>#8<br>#3 #2<br><Signal for protection><br>A-phase current sensing<br>B-phase current sensing<br>Input surge voltage sensing<br>**----- End of picture text -----**<br>


## Figure 9 Typical application circuit 

Because CIPOS ™ Mini PFC has very high speed switching characteristics, considerable large surge voltage between P and N terminals and switching noise on signaling path are generated easily. Please pay attention to the below items for optimized application circuit design. 

1. Input circuit 

- To reduce input signal noise by high speed switching, the RIN and CIN filter circuit should be mounted. (100Ω, 1nF) 

- CIN should be placed as close to VSS pin as possible. 

2. Itrip circuit 

- To prevent protection function errors, CITRIP should be placed as close to Itrip and VSS pins as possible. 

## 3. VFO circuit 

- VFO output is an open drain output. This signal line should be pulled up to the positive side of the 5V/3.3V logic power supply with a proper resistor RPU. It is recommended that RC filter be placed as close to the controller as possible. 

## 4. Snubber capacitor 

- The wiring between CIPOS ™ Mini PFC and snubber capacitor including shunt resistor should be as short as possible. 

## 5. Shunt resistor 

- The shunt resistor of SMD type should be used for reducing its stray inductance. 

## 6. Ground pattern 

- Ground pattern should be separated at only one point of shunt resistor as short as possible. 

7. It is mandatory to connect anti-parallel diode (2A, voltage rating higher than 650V) to PFC IGBT. 

8. Input surge voltage protection circuit 

- This protection circuit is necessary for PFC IGBT to be protected from excessive surge voltage. 

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## Switching Times Definition 

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**----- Start of picture text -----**<br>
 LINx 2.1V<br>0.9V<br>trr<br>toff ton<br>10%<br>iCx<br>90% 90%<br>tf tr<br>10%<br>10% 10% 10%<br>v CEx<br>tc(off) tc(on)<br>**----- End of picture text -----**<br>


Figure 10 Switching times definition 

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## Electrical characteristic 

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**----- Start of picture text -----**<br>
80 80 80<br>75 T J =25 ℃ 75 V DD =15V 75<br>70 70 70<br>65 65 65<br>60 60 60<br>55 55 55<br>50 50 50<br>45 45 45<br>40 40 40<br>35 35 35<br>30  V DD =15V 30 30<br>25  VDD=20V 25  TJ=25 ℃ 25<br>2015 2015  T J =150 ℃ 2015  T TJJ==15025 ℃℃<br>10 10 10<br>5 5 5<br>0 0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VCE(sat), Collector - Emitter voltage [V] VCE(sat), Collector - Emitter voltage [V] VF, Forward voltage [V]<br>Typ. Collector – Emitter saturation voltage  Typ. Collector – Emitter saturation voltage   Typ. Diode forward voltage<br>4.5 350<br>4.0 VVDCDD=400V=15V 2.42.2 VVDCDD=400V=15V 325300 VVDCDD=400V=15V<br>3.5 2.0 275<br>1.8 250<br>3.02.5 1.61.4 225200 TTjj=25=150  C     C<br>2.01.5 TT JJ =2=1505 ℃℃ 1.21.00.8 T TJ J=25 =150 ℃ ℃ 175150125<br>100<br>1.0 0.6 75<br>0.4 50<br>0.5<br>0.2 25<br>0.0 0.0 0<br>0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80<br>Ic, Collector current [A] Ic, Collector current [A] Ic, Collector current [A]<br>Typ. Turn on switching energy loss   Typ. Turn off switching energy loss  Typ. Reverse recovery energy loss<br>Ic, Collector - Emitter current [A]<br>, Forward current [A]IF<br>Ic, Collector - Emitter current [A]<br>Eon, Turn on switching energy loss [mJ] Eoff, Turn off switching energy loss [mJ] Erec, Reverse recovery energy loss [uJ]<br>**----- End of picture text -----**<br>


Typ. Collector – Emitter saturation voltage 

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**----- Start of picture text -----**<br>
850 400 1000<br>825800 VVDC DD =400V=15V 375350325 VVDCDD=400V=15V 975950925 VVDCDD=400V=15V<br>775 300<br>750725700675 T TJ J=25 =150 ℃ ℃ 275250225200175 TTJJ=25=150 ℃℃ 900875850825800 TT JJ =25=150 ℃℃<br>650 150125 775750<br>625 100<br>600 7550 725700<br>575 25 675<br>550 0 650<br>0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80<br>Ic, Collector current [A] Ic, Collector current [A] Ic, Collector current [A]<br> Typ. Turn on propagation delay time   Typ. Turn on switching time  Typ. Turn off propagation delay time<br>150 250 10<br>140 VDC=400V VDC=400V<br>130 V DD =15V 225 VDD=15V<br>120 200 1<br>110<br>175<br>100<br>90 150 0.1<br>80 D : duty ratio<br>70 125 D=50% D=20%<br>60 100 0.01 D=10%<br>50 D=5%<br>403020 TT JJ =25=150 ℃℃ 7550  TT JJ =25=150 ℃℃ 1E-3 D Sin =2% gle pulse<br>25<br>10<br>0 0 1E-4<br>0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80 1E-7 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100<br>Ic, Collector current [A] Ic, Collector current [A] tP, Pulse width [sec.]<br> Typ. Turn off switching time  Typ. Reverse recovery time   IGBT transient thermal resistance at all<br>IGBTs operation<br>, Turn on switching time [ns]<br>tc(on)<br>, Turn on propagation delay time [ns] , Turn off propagation delay time [ns]<br>ton toff<br>, Turn off switching time [ns]<br>, Reverse recovery time [ns]<br>tc(off) trr<br>transient thermal resistance [K/W]ZthJC,<br>**----- End of picture text -----**<br>


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Control Integrated POwer System (CIPOS™) IFCM30T65GD 

## Package Outline 

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Control Integrated POwer System (CIPOS™) IFCM30T65GD 

**==> picture [103 x 46] intentionally omitted <==**

## Revision history 

|Document<br>version|Date of release|Description of changes|
|---|---|---|
|V 2.1|Jun. 2017|Package outline update|
|V 2.2|Sep. 2017|Maximum operating case temperature, Tc= 125°C|
||||



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## Trademarks 

All referenced product or service names and trademarks are the property of their respective owners. 

## IMPORTANT NOTICE 

Edition 2017-09-06 The information given in this document shall in no event be regarded as a guarantee of conditions or Published by characteristics  (“Beschaffenheitsgarantie”) . Infineon Technologies AG With respect to any examples, hints or any typical 81726 München, Germany values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all © 2017 Infineon Technologies AG. warranties and liabilities of any kind, including without limitation warranties of non-infringement All Rights Reserved. of intellectual property rights of any third party. Do you have a question about this In addition, any information given in this document document? is subject to customer’s compliance with its obligations stated in this document and any Email: erratum@infineon.com applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in Document reference customer’s applications. ifx1 The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( www.infineon.com ). 

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## WARNINGS 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IFCM30T65GDXKMA1/intelligent-power-module-ipm-igbt-650-v-30-a-2-kv)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/ifcm30t65gdxkma1/intelligent-power-module-650v/dp/2986385)
---

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