# Silicon Carbide Schottky Diode, CoolSiC 5G Series, Single, 2 kV, 140 A, 450 nC, TO-247

![Product image](https://novapart.co/image/farnell:4670256/)

**URL**: https://novapart.co/products/IDWD50G200C5XKSA1/silicon-carbide-schottky-diode-coolsic-5g-series
**SKU**: IDWD50G200C5XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €20.0100
**Stock**: 100+
**Lead Time**: 218 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2 Pin |
| Product Range | CoolSiC 5G Series |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-247 |
| Diode Configuration | Single |
| Average Forward Current | 140A |
| Total Capacitive Charge | 450nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:4670256/)

**IDWD50G200C5 CoolSiC[™] Schottky diode 2000 V G5** 

## **Final datasheet** 

## **CoolSiC[™] Schottky diode 2000 V G5** 

## **Features** 

- VRRM = 2000 V 

- IF = 50 A 

- VF = 1.5 V 

- No reverse recovery current / no forward recovery 

- High surge current capability 

- Temperature independent switching behavior 

- Low forward voltage even at high operating temperature 

- Tight forward voltage distribution 

- Specified dv/dt ruggedness 

- .XT interconnection technology for best-in-class thermal performance 

## **Potential applications** 

- String 3-phase inverter 

- EV Charging 

## **Product validation** 

- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 

## **Description** 

Pin definition: Pin 1 – Cathode Pin 2 – Anode 

|1||
|---|---|
||CASE|
|2||



|—|||
|---|---|---|
|**Type**<br>—|**Package**|**Marking**|
|IDWD50G200C5<br>—|PG-TO247-2-U01|D5020C5|



Please read the sections "Important notice" and "Warnings" at the end of this document 

Datasheet www.infineon.com 

Revision 1.00 2024-09-30 

**IDWD50G200C5 CoolSiC[™] Schottky diode 2000 V G5** 

**==> picture [105 x 47] intentionally omitted <==**

**Table of contents** 

## **Table of contents** 

||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
|---|---|
||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1|
||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1|
||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2|
|**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|**2**|**SiC Diode**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3|
|**3**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
|**4**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8|
||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10|



Datasheet 

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2 

**IDWD50G200C5 CoolSiC[™] Schottky diode 2000 V G5** 

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## **1  Package** 

|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|||||
|---|---|---|---|---|---|---|---|
|**Table 1**<br>**Characteristic values**||||||||
|**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|Storage temperature|_T_stg|||-55||150|°C|
|Soldering temperature|_T_sold|wave soldering 1.6 mm (0.063 in.) from case<br>for 10 s||||260|°C|
|Mounting torque|_M_|M3 screw, Maximum of mounting processes:<br>3||||0.6|Nm|
|Thermal resistance,<br>junction-ambient|_R_th(j-a)|||||62|K/W|
|Diode thermal resistance,<br>junction-case|_R_th(j-c)||||0.15|0.19|K/W|



## **2 SiC Diode** 

|**2**<br>**SiC Diode**|**2**<br>**SiC Diode**|**2**<br>**SiC Diode**|||||
|---|---|---|---|---|---|---|
|**Table 2**<br>**Maximum rated values**|||||||
|**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**|
|Repetitive peak reverse<br>voltage|_V_RRM|_T_vj≥ 25 °C|||2000|V|
|Continuous forward<br>current for Rth(j-c,max)|_I_F|_D_= 1|_T_c= 25 °C||140|A|
||||_T_c= 135 °C||67||
||||_T_c= 151 °C||50||
|Surge repetitive forward<br>current, sine halfwave_1)_|_I_F,RM|_t_p= 10 ms|_T_c= 25 °C||200|A|
||||_T_c= 100 °C||150||
|Surge non-repetitive<br>forward current, sine<br>halfwave|_I_F,SM|_t_p= 10 ms|_T_c= 25 °C||325|A|
||||_T_c= 150 °C||287||
|Non-repetitive peak<br>forward current|_I_F,max|_T_c= 25 °C,_t_p= 10 µs|||1900|A|
|I²t value|_∫ I_2_t_|_t_p= 10 ms|_T_c= 25 °C||528|A²s|
||||_T_c= 150 °C||412||
|Diode dv/dt ruggedness|_dv/dt_|_V_R= 0...1500 V|||100|V/ns|
|Power dissipation for<br>Rth(j-c,max)|_P_tot||_T_c= 25 °C||789|W|



_1)_ Not subject to production test. The test was performed with 20k pulses (half-wave rectified sine with 10 ms period). 

Datasheet 

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**IDWD50G200C5 CoolSiC[™] Schottky diode 2000 V G5** 

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## **2  SiC Diode** 

|**Table 3**<br>**Characteristic values**|**Table 3**<br>**Characteristic values**|**Table 3**<br>**Characteristic values**||||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**|
|||||**Min.**|**Typ.**|**Max.**||
|DC blocking voltage|_V_DC|_T_vj= 25 °C||2000|||V|
|Diode forward voltage|_V_F|_I_F= 50 A|_T_vj= 25 °C||1.5|1.75|V|
||||_T_vj= 150 °C||2.3|||
|Reverse current|_I_R|_V_R= 2000 V|_T_vj= 25 °C||25|750|µA|
||||_T_vj= 150 °C||180|||
|Total capacitive charge|_Q_C|_V_R= 1500 V,_T_vj= 25 °C & 150 °C,<br>QC=<br>0<br>VR<br>C<br>V<br>dV|||450||nC|
|Total capacitance|_C_|_f_= 100 kHz|_V_R= 1 V||5700||pF|
||||_V_R= 600 V||230|||
||||_V_R= 1500 V||155|||
|Operating junction<br>temperature|_T_vj|||-55||175|°C|



_**Note** : For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet._ 

_Electrical Characteristic at T_ vj _= 25°C, unless otherwise specified._ 

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**3  Characteristics diagrams** 

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## **3 Characteristics diagrams** 

## **Power dissipation as function of case temperature** 

Ptot = f(Tc) 

T ≤ 175 °C vj limited by bondwire 

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**----- Start of picture text -----**<br>
1000<br>900<br>800<br>700<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br>


**Typical forward characteristics in surge current** IF = f(VF) tp = 50 µs 

## **Typical forward characteristics** 

IF = f(VF) 

tp = 50 µs 

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**----- Start of picture text -----**<br>
150<br>125<br>100<br>75<br>50<br>25<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>**----- End of picture text -----**<br>


**Diode forward current as function of case temperature** IF = f(Tc) D = duty cycle , Tvj ≤ 175 °C 

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**----- Start of picture text -----**<br>
500 500<br>450 450<br>400 400<br>350 350<br>300 300<br>250 250<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0 1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br>


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## **3  Characteristics diagrams** 

**Typical capacitive charge as function of current slope** QC = f(diF/dt) 

## **Typical reverse characteristics** IR = f(VR) 

Tvj = 25 °C, VR = 1500 V guaranteed by design 

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**----- Start of picture text -----**<br>
600<br>500<br>400<br>300<br>200<br>100<br>0<br>100 200 300 400 500 600 700 800 900 1000<br>**----- End of picture text -----**<br>


**Typical capacitance as function of reverse voltage** C = f(VR) 

Tvj = 25 °C, f = 100 kHz 

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**----- Start of picture text -----**<br>
10000<br>1000<br>100<br>1 10 100 1000<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1000<br>100<br>10<br>1<br>0.1<br>0.01<br>400 800 1200 1600 2000<br>**----- End of picture text -----**<br>


## **Typical capacitively stored energy as function of reverse voltage** 

EC = f(VR) f = 100 kHz 

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**----- Start of picture text -----**<br>
300<br>270<br>240<br>210<br>180<br>150<br>120<br>90<br>60<br>30<br>0<br>0 200 400 600 800 1000 1200 1400 1600 1800 2000<br>**----- End of picture text -----**<br>


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## **3  Characteristics diagrams** 

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**----- Start of picture text -----**<br>
Max. transient thermal impedance<br>Zth(j-c),max = f(tp)<br>D = tp/T<br>0.1<br>0.01<br>0.001<br>1E-5 0.0001 0.001 0.01 0.1 1<br>**----- End of picture text -----**<br>


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## **4  Package outlines** 

**4** 

## **Package outlines** 

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|PACKAGE - GROU<br>NUMBER:|**PG-TO247-2-U01**<br>P|**PG-TO247-2-U01**<br>P||||
|---|---|---|---|---|---|
|**DIMENSIONS**|**MILLIMETERS**|||||
||MIN.|MAX.||||
|**A**|4.90|5.10|**L**|19.80|20.10|
|**A1**|2.31|2.51|**L1**|---|4.30|
|**A2**|1.90|2.10|**øP**|3.50|3.70|
|**b**|1.16|1.26|**øP1**|7.00|7.40|
|**b1**|1.96|2.06|**øP2**|2.40|2.60|
|**c**|0.59|0.66|**Q**|5.60|6.00|
|**D**|20.90|21.10|**Q1**|9.80|10.20|
|**D1**|16.25|16.85|**S**|6.05|6.25|
|**D2**|1.05|1.35||||
|**E**|15.70|15.90||||
|**E1**|13.10|13.50||||
|**E2**|4.90|5.10||||
|**E3**|2.40|2.60||||
|**E4**|600|640||||
|**e**<br>|10.88<br>.<br>.|||||
|**N**|2|||||



## **Figure 1** 

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**IDWD50G200C5 CoolSiC[™] Schottky diode 2000 V G5** 

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**Revision history** 

## **Revision history** 

|**Revision history**|||
|---|---|---|
|**Document revision**|**Date of release**|**Description of changes**|
|0.10|2023-05-16|Target datasheet|
|0.20|2024-03-21|Preliminary datasheet|
|1.00|2024-09-30|Final datasheet|



Datasheet 

Revision 1.00 2024-09-30 

9 

## **Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

**Edition 2024-09-30 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** 

With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2024 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABH310-003** Infineon Technologies in customer’s applications. 

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## **Warnings** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 



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