# Silicon Carbide Schottky Diode, thinQ, Single, 650 V, 40 A, 55 nC, TO-247
**URL**: https://novapart.co/products/IDW40G65C5XKSA1/silicon-carbide-schottky-diode-thinq-single-650-v
**SKU**: IDW40G65C5XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €7.2500
**Stock**: 200+
**Lead Time**: 358 days (indicative)
## Description
Product Range:thinQ Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:40A; Total Capacitive Charge Qc:55nC; Diode Case Styl
## Specifications
| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3 Pin |
| Product Range | thinQ |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-247 |
| Diode Configuration | Single |
| Average Forward Current | 40A |
| Total Capacitive Charge | 55nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:3155019/)
## SiC
Silicon Carbide Diode
5[th] Generation thinQ![TM] 650V SiC Schottky Diode IDW40G65C5
## Final Datasheet
Rev. 2.2, 2013-01-15
> [Power Management & Multimarket ] eee
## Gafineon
## **5[th] Generation thinQ!™ SiC Schottky Diode**
## **IDW40G65C5**
## **1 Description**
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
## **Features**
- Revolutionary semiconductor material - Silicon Carbide
- Benchmark switching behavior
- No reverse recovery/ No forward recovery
- Temperature independent switching behavior
- High surge current capability
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1
2
3
1
2 CASE
3
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- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC[1)] for target applications
- Breakdown voltage tested at 88 mA[2)]
- Optimized for high temperature operation
## **Benefits**
- System efficiency improvement over Si diodes
- System cost / size savings due to reduced cooling requirements
- Enabling higher frequency / increased power density solutions
- Higher system reliability due to lower operating temperatures
- Reduced EMI
## **Applications**
- Switch mode power supply
- Power factor correction
- Solar inverter
- Uninterruptible power supply
||**Table 1**|**Key Performance Parameters**|**Key Performance Parameters**|**Key Performance Parameters**|**Key Performance Parameters**|
|---|---|---|---|---|---|
||**Parameter**|**Value**||**Unit**||
||_VDC_|650||V||
||_QC_;_V_R=400V
55|||nC||
||_EC_;_V_R=400V|12.8||µJ||
||_IF @ T_C< 110°C
40|||A||
||**Table 2**|**Pin Definition**||||
|**Pin 1**
**Pin 2**
**Pin 3**
n.c.
C
A
~~————~~||||||
**Type / ordering Code Package Marking Related links** ~~_—~~ IDW40G65C5 PG-TO247-3 D4065C5 www.infineon.com/sic
1) J-STD20 and JESD22
- 2) All devices tested under avalanche conditions for a time periode of 10ms
Final Data Sheet
2
Rev. 2.2, 2013-01-15
**5[th] Generation thinQ![TM] SiC Schottky Diode IDW40G65C5**
## **Table of contents**
## **Table of Contents**
|**1**|**Description .......................................................................................................................................... 2**|
|---|---|
|**2**|**Maximum ratings ................................................................................................................................ 4**|
|**3**|**Thermal characteristics ..................................................................................................................... 4**|
|**4**|**Electrical characteristics ................................................................................................................... 5**|
|**5**|**Electrical characteristics diagrams .................................................................................................. 6**|
|**6**|**Simplified Forward Characteristics Model ...................................................................................... 8**|
|**7**|**Package outlines ................................................................................................................................ 9**|
|**8**|**Revision History ............................................................................................................................... 10**|
Final Data Sheet
3
Rev. 2.2, 2013-01-15
**5[th] Generation thinQ![TM] SiC Schottky Diode IDW40G65C5**
## **Maximum ratings**
## **2 Maximum ratings**
|**Table 3**
**Maximum ratings**|**Table 3**
**Maximum ratings**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/Test Condition**|
|||**Min.**|**Typ. **|**Max.**|||
|Continuous forward current|_I_F|–|–|40|A|_T_C< 110°C,D=1|
|Surge non-repetitive forward current,
sine halfwave|
_I_F,SM|–|–|182||_TC_= 25°C, _t_p=10 ms|
|||–|–|153||_T_C= 150°C, _t_p=10 ms|
|Non-repetitivepeak forward current|_I_F,max|–|–|1432||_T_C= 25°C, _t_p=10µs|
|i²t value|_∫ i²dt_|–|–|166|A²s|_TC_= 25°C, _t_p=10 ms|
|||–|–|118||_T_C= 150°C, _t_p=10 ms|
|Repetitivepeak reverse voltage|_V_RRM|–|–|650|V||
|Diode dv/dt ruggedness|_dv/dt_|–|–|100|V/ns|_V_R=0..480 V|
|Power dissipation|_P_tot|–|–|183|W|_TC_= 25°C|
|Operatingand storage temperature|_T_j_;T_stg|-55|–|175|°C||
|Mountingtorque||–|50|70|Ncm|M3 and M4 screws|
## **3 Thermal characteristics**
|**Table 4**
**Thermal characteristics TO-247-3 **|**Table 4**
**Thermal characteristics TO-247-3 **|**Table 4**
**Thermal characteristics TO-247-3 **|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/Test Condition**|
|||**Min.**|**Typ. **|**Max.**|||
|Thermal resistance, junction-case|_R_thJC|–|0.6|0.8|K/W||
|Thermal resistance, junction-
ambient|_R_thJA|–|–|62||leaded|
|Soldering temperature,
wavesolderingonlyallowed at leads|_T_sold|–|–|260|°C|1.6mm (0.063 in.) from
case for 10 s|
Final Data Sheet
Rev. 2.2, 2013-01-15
4
**5[th] Generation thinQ![TM] SiC Schottky Diode IDW40G65C5**
## **Electrical characteristics**
## **4 Electrical characteristics**
|**Table 5**
**Static characteristics**|**Table 5**
**Static characteristics**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/Test Condition**|
|||**Min.**|**Typ. **|**Max.**|||
|DC blockingvoltage|_V_DC|650|–|–|V|_I_R= 0.22 mA, _T_j= 25°C|
|Diode forward voltage|_V_F|–|1.5|1.7||_I_F= 40 A, _T_j=25°C|
|||–|1.8|2.1||_I_F= 40 A, _T_j=150°C|
|Reverse current|_I_R|–|2.2|220|µA|_V_R=650 V, _T_j=25°C|
|||–|0.5|150||_V_R=600 V, _T_j=25°C|
|||–|8.2|1500||_V_R=650 V, _T_j=150°C|
|**Table 6**
**AC characteristics**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/Test Condition**|
|||**Min.**|**Typ. **|**Max.**|||
|Total capacitive charge|_Q_c|–|55||nC|_V_R=400 V,_di/dt_=200A/µs,
_I_F≤_I_F,MAX, _T_j=150°C.|
|Total Capacitance|_C_|–|1140|–|pF|_V_R=1 V, _f_=1 MHz|
|||–|147|–||_V_R=300 V, _f_=1 MHz|
|||–|145|–||_V_R=600 V, _f_=1 MHz|
Final Data Sheet
Rev. 2.2, 2013-01-15
5
**5[th] Generation thinQ![TM] SiC Schottky Diode IDW40G65C5**
## **5 Electrical characteristics diagrams**
## **Table 7**
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Power dissipation Diode forward current
200 250 0.1
180 0.3
0.5
160 200 0.7
140 1
120 150
100
80 100
60
40 50
20
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC[°C] TC[°C]
P tot=f( T C); R thJC,max I F=f( T C); T j≤175°C; R thJC,max; parameter D =duty cycle
[W] P tot [A] I F
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## **Table 8**
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Typical forward characteristics
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Typical forward characteristics in surge current
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80 400
70 -55°C 350
25°C
60 300
100°C
50 250
-55°C
40 200 25°C
30 150 100°C
150°C
20 100
175°C 150°C
10 50 175°C
0
0
0 1 2 3 0 1 2 3 4 5 6
V F [V] V F [V]
I F=f( V F); tp=200 µs; parameter: T j I F=f( V F); tp=200 µs; parameter: T j
[A] [A]
I F I F
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Final Data Sheet
6
Rev. 2.2, 2013-01-15
**5[th] Generation thinQ![TM] SiC Schottky Diode IDW40G65C5**
## **Table 9**
## **Typ. capacitance charge vs. current slope[1)]**
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Typ. reverse current vs. reverse voltage
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**----- Start of picture text -----**
1.E-4
60
50 1.E-5
40
1.E-6
175°C
30
1.E-7
150°C
20
100°C
1.E-8
10 -55°C
25°C
0 1.E-9
100 300 500 700 900 100 200 300 400 500 600
d I F/dt [A/µs] V R [V]
Q C=f(diF/dt); T j=150°C; V R=400 V; I F≤ I F,max I R=f( V R); parameter: T j
[nC]
C
Q [A] I R
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1) Only capacitive charge, guaranteed by design.
## **Table 10**
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**----- Start of picture text -----**
Max. transient thermal impedance Typ. capacitance vs. reverse voltage
1 1600
1400
1200
1000
0.5
0.1 0.2 800
0.1
0.05 600
0.02
0.01 400
single pulse
200
0.01 0
1.E-06 1.E-03 1.E+00 0 1 10 100 1000
t p [s] V R [V]
Zth,jc =f( t P); parameter: D= t P/ T C= f( V R); T j=25°C; f =1 MHz
[K/W]
[pF]
th,jc
Z C
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Final Data Sheet
Rev. 2.2, 2013-01-15
7
**5[th] Generation thinQ![TM] SiC Schottky Diode IDW40G65C5**
## **Table 11**
## **Typ. capacitance stored energy**
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**----- Start of picture text -----**
35
30
25
20
15
10
5
0
0 200 400 600
VR [V]
E C=f( V R)
[µJ]
C
E
**----- End of picture text -----**
## **6 Simplified Forward Characteristics Model**
## **Table 12**
**Equivalent forward current curve Mathematical Equation** _V_ _V_ _R_ _I F TH DIFF F VTH_ _T j_ .0001 _T j_ .104 V _RDIFF_ _T j_ 3.2 10-7 _T j_ 2 3.2 10-5 _T j_ 0.012 **1/R diff V th** _**V**_ **F [V]** _V_ F=f( _I_ F) _T_ j in °C; -55°C < _T_ j < 175°C; _I_ F < 80 A
Final Data Sheet
8
Rev. 2.2, 2013-01-15
**5[th] Generation thinQ![TM] SiC Schottky Diode IDW40G65C5**
**7**
## Cnfineon
## **Package outlines**
**Figure 1 Outlines TO-247, dimensions in mm/inches**
Final Data Sheet
9
Rev. 2.2, 2013-01-15
**5[th] Generation thinQ![TM] SiC Schottky Diode IDW40G65C5**
## Gafineon
## **Revision History**
## **8 Revision History**
## **5** ~~**[th]**~~ **Generation thinQ!** ~~**[TM]**~~ **SiC Schottky Diode**
## **Revision History: 2013-01-15, Rev. 2.2**
## **Previous Revision:**
|**Revision**|**Subjects(major changes since last version)**|
|---|---|
|2.0|Release of the final datasheet.|
|2.1|Reverse current values,maximum diode forward voltage.|
|2.2|Reverse current values,tested avalanche current,simplified calculation model|
## **We Listen to Your Comments**
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to: **erratum@infineon.com** Edition 2013-01-15
Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved.
## **Legal Disclaimer**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
## **Information**
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( **www.infineon.com** ).
## **Warnings**
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
10
Rev. 2.2, 2013-01-15
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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