# Silicon Carbide Schottky Diode, thinQ, Dual Common Cathode, 1.2 kV, 62 A, 106 nC, TO-247

![Product image](https://novapart.co/image/farnell:2709929/)

**URL**: https://novapart.co/products/IDW20G120C5BFKSA1/silicon-carbide-schottky-diode-thinq-dual-common
**SKU**: IDW20G120C5BFKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Schottky Diodes || Silicon Carbide Schottky Diodes
**Price**: €3.8100
**Stock**: 50+
**Lead Time**: 218 days (indicative)

## Description

Product Range:thinQ Series; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:62A; Total Capacitive Charge Qc:106nC;

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3 Pin |
| Product Range | thinQ |
| Qualification | - |
| Diode Mounting | Through Hole |
| Diode Case Style | TO-247 |
| Diode Configuration | Dual Common Cathode |
| Average Forward Current | 62A |
| Total Capacitive Charge | 106nC |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2709929/)

## Silicon Carbide Schottky Diode 

## IDW20G120C5B 

5[th] Generation thinQ!™ 1200 V SiC Schottky Diode 

## Final Datasheet 

Rev. 2.0 2014-06-10 

> [Industrial Power Control ] ~~ee~~ 

IDW20G120C5B 

## Cinfineon 

## 5[th] Generation thinQ!™ 1200 V SiC Schottky Diode 

## thinQ![TM] SiC Schottky Diode 

## **Features:** 

- Revolutionary semiconductor material - Silicon Carbide 

**==> picture [126 x 56] intentionally omitted <==**

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1<br>2 CASE<br>3<br>**----- End of picture text -----**<br>


- No reverse recovery current / No forward recovery 

- Temperature independent switching behavior 

- Low forward voltage even at high operating temperature 

- Tight forward voltage distribution 

- Excellent thermal performance 

- Extended surge current capability 

- Specified dv/dt ruggedness 

- Qualified according to JEDEC[1)] for target applications 

- Pb-free lead plating; RoHS compliant 

## **Benefits** 

- System efficiency improvement over Si diodes 

- Enabling higher frequency / increased power density solutions 

- System size/cost savings due to reduced heatsink requirements and smaller magnetics 

- Reduced EMI 

- Highest efficiency across the entire load range 

- Robust diode operation during surge events 

- High reliability 

- RelatedLinks: www.infineon.com/sic 

## **Applications** 

- Solar inverters 

- Uninterruptable power supplies 

- Motor drives 

- Power Factor Correction 

## **Package pin definitions** 

- Pin 1 – anode 1 

- Pin 2 and backside – cathode 

- Pin 3 – anode 2 

## **Key Performance and Package Parameters (leg/device)** 

|**Type**|**_V_DC**|**_I_F**|**_Q_C**|**_T_j,max**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IDW20G120C5B|1200V|10A / 20A|53nC / 106nC|175°C|D2012B5|PG-TO247-3|



1) J-STD20 and JESD22 

Final Data Sheet 

Rev. 2.0, 2014-06-10 

2 

IDW20G120C5B 

5[th] Generation thinQ!™ 1200 V SiC Schottky Diode 

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## **Table of Contents** 

Description…. ............................................................................................................................................. 2 Table of Contents ........................................................................................................................................ 3 Maximum ratings ......................................................................................................................................... 4 Thermal Resistances .................................................................................................................................. 4 Electrical Characteristics ............................................................................................................................. 5 Electrical Characteristics diagram .............................................................................................................. 6 Package Drawings ...................................................................................................................................... 9 Revision History ........................................................................................................................................ 10 Disclaimer…. ............................................................................................................................................. 10 

Final Data Sheet 

Rev. 2.0, 2014-06-10 

3 

IDW20G120C5B 

5[th] Generation thinQ!™ 1200 V SiC Schottky Diode 

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## **Maximum ratings** 

|**Maximum ratings**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value (leg/device)**|**Unit**|
|Repetitive peak reverse voltage|_V_RRM|1200|V|
|Continuous forward current for Rth(j-c,max)<br>_T_C= 153°C, D=1<br>_T_C= 135°C, D=1<br>_T_C= 25°C, D=1|_I_F|10 / 20<br>14 / 29<br>31 / 62|A|
|Surge non-repetitive forward current, sine halfwave<br>_T_C=25°C, tp=10ms<br>_T_C=150°C, tp=10ms|_I_F,SM|95 / 190<br>90 / 180|A|
|Non-repetitive peak forward current<br>_T_C= 25°C,_t_p=10µs|_I_F,max|887 / 1774|A|
|i²t value<br>_T_C= 25°C,_t_p=10 ms<br>_T_C= 150°C,_t_p=10 ms|_∫ i²dt_|45 / 180<br>41 / 162|A²s|
|Diode d_v_/d_t_ruggedness<br>_V_R=0...960 V|d_v_/d_t_|80|V/ns|
|Power dissipation for Rth(j-c,max)<br>_T_C= 25°C|_P_tot|125  / 250|W|
|Operating and storage temperature|_T_j_;T_stg|-55…175|°C|
|Soldering temperature,<br>wavesoldering only allowed at leads<br>1.6mm(0.063 in.)from case for 10 s|_T_sold|260|°C|
|Mounting torque<br>M3 and M4 screws|_M_|0.7|Nm|



## **Thermal Resistances** 

|**Thermal Resistances**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Conditions**|**Value (leg/device)**|||**Unit**|
||||**min.**|**typ.**|**max.**||
|**Characteristic**|||||||
|Diode thermal resistance,<br>junction – case|Rth(j-c)||-|0.9/0.45|1.2/0.6|K/W|
|Thermal resistance,<br>junction – ambient|Rth(j-a)|leaded|-|-|62|K/W|



Final Data Sheet 

Rev. 2.0, 2014-06-10 

4 

IDW20G120C5B 

5[th] Generation thinQ!™ 1200 V SiC Schottky Diode 

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## **Electrical Characteristics** 

**Static Characteristic, at Tj=25°C, unless otherwise specified** 

|**Parameter**|**Symbol**|**Conditions**|**Value (leg/device)**|**Value (leg/device)**|**Value (leg/device)**|**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|DC blockingvoltage|_V_DC|_T_j= 25°C|1200|-|-|V|
|Diode forward voltage|_V_F|_I_F= 10/20 A,_T_j=25°C<br>_I_F= 10/20 A,_T_j=150°C|-<br>-|1.4<br>1.7|1.65<br>2.30|V|
|Reverse current|_I_R|_V_R=1200V,_T_j=25°C<br>_V_R=1200V,_T_j=150°C||6 / 12<br>29 / 58|83 / 166<br>420 / 840|µA|



**Dynamic Characteristics, at Tj=25°C, unless otherwise specified** 

|**Parameter**|**Symbol**|**Conditions**|**Value (leg/device)**|**Value (leg/device)**|**Value (leg/device)**|**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|Total capacitive charge|_Q_C|_V_R= 800V,_T_j=150° C & 25°C<br><br><br>_R_<br>_V_<br>_C_<br>_dV_<br>_V_<br>_C_<br>_Q_<br>0<br>)<br>(|<br>-|53 / 106|-|nC|
|Total Capacitance|_C_|_V_R=1 V,_f_=1 MHz<br>_V_R=400 V,_f_=1 MHz<br>_V_R=800 V,_f_=1 MHz|-<br>-<br>-|684 /1368<br>48 / 96<br>38 / 76|<br>-<br>-<br>-|pF|



Final Data Sheet 

Rev. 2.0, 2014-06-10 

5 

IDW20G120C5B 

5[th] Generation thinQ!™ 1200 V SiC Schottky Diode 

## Cinfin eon 

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**----- Start of picture text -----**<br>
140<br>Per leg<br>120<br>100<br>L S<br>80<br>EXGRani<br>CENCE<br>60<br>40<br>20<br>NX<br>0 CEEEENE<br>25 50 75 100 125 150 175<br>Tc [°C]<br>Power dissipation per leg as function<br>               of case temperature,  P tot=f(=f( T C),  ),<br>R th(j-c),max<br>20<br>Per leg<br>18 I -55 C [/ / /<br>16<br>14 25 C<br>12<br>100 C<br>10 150 C<br>8<br>6 7/4 175 C<br>4 yy /~<br>2<br>0<br>0 0.5 1 1.5 2 2.5<br>V F [V]<br>P [W]<br> [A]<br>IF<br>**----- End of picture text -----**<br>


Figure 1. **Power dissipation per leg as function of case temperature,** _P_ tot=f(=f( _T_ C),  ), _R_ th(j-c),max 

Figure 3. **Typical forward characteristics per leg,** _I_ F=f( _V_ F), _t_ p= 10 µs, parameter: _T_ j 

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**----- Start of picture text -----**<br>
120<br>Per leg  D= 0.10<br>D= 0.30<br>100<br>D= 0.50<br>D= 0.70<br>80 = D= 1.00<br>an<br>60<br>40<br>20<br>BEA<br>0<br>i,<br>25 50 75 100 125 150 175<br>Tc [°C]<br> [A]<br>IF<br>**----- End of picture text -----**<br>


Figure 2. **Diode forward current per leg as function of temperature,** parameter: _T_ j≤175°C, Rth(j-c),max, _D_ =duty cycle, Vth, _R_ diff @ _T_ j=175°C 

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**----- Start of picture text -----**<br>
100<br>Per leg<br>90 a -55 C<br>80<br>25 C<br>70<br>60<br>100 C<br>50<br>40<br>+t //Wp<br>30<br>|Wy 150 C<br>20<br>10 175 C<br>0<br>0 1 2 3 4 5 6<br>V F [V]<br> [A]<br>I F<br>**----- End of picture text -----**<br>


Figure 4. **Typical forward characteristics in surge current per leg,** _I_ F=f( _V_ F), _t_ p= 10 µs, parameter: _T_ j 

Final Data Sheet 

Rev. 2.0, 2014-06-10 

6 

IDW20G120C5B 

## Cinfineon 

## 5[th] Generation thinQ!™ 1200 V SiC Schottky Diode 

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**----- Start of picture text -----**<br>
1.E-04<br>—__] Per leg<br>1.E-05<br>1.E-06<br>175 C<br>1.E-07<br>150 C<br>1.E-08<br>100 C -55 C<br>25 C<br>1.E-09<br>200 400 600 800 1000 1200<br>VR [V]<br>Typical reverse characteristics per leg,<br>I R=f(=f( V R), parameter: ), parameter:  T j<br>900<br>800<br>Per leg<br>700<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>0  1  10  100  1000<br>V R [V]<br>[a] j<br> [A]<br>IR<br> [pF]<br>C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
60<br>50 a<br>40 Per leg<br>me<br>30<br>20<br>10<br>0<br>100 400 700 1000<br>dIF/dt [A/µs]<br>Typical capacitive charge per leg as<br>function of current slope [[1]] ,  Q C=f(=f( dI F// dt ),  T j=150°C=150°C<br>1) guaranteed by design.<br>Per leg<br>1<br>D= 0.50<br>0.1 D= 0.20<br>D= 0.10<br>D= 0.05<br>D= 0.02<br>D= 0.01<br>Single Pulse<br>0.01<br>1E-6 1E-3 1E0<br>tp [s]<br>7<br> [nC]<br>C<br>Q<br> [K/W]<br>thjc<br>Z<br>**----- End of picture text -----**<br>


Figure 5. **Typical capacitive charge per leg as function of current slope**[[1]] **,** _Q_ C=f(=f( _dI_ F// _dt_ ), _T_ j=150°C=150°C Figure 6. 1) guaranteed by design. _I_ R=f(=f( _V_ R), parameter: ), parameter: _T_ j 

Figure 6. **Typical reverse characteristics per leg,** 

Figure 7. **Max. transient thermal impedance per leg,** _Z_ th,j-c=f( _t_ P), parameter: D= _t_ P/ _T_ 

Figure 8. **Typical capacitance per leg as function of reverse voltage,** _C=_ f( _V_ R); _T_ j=25°C; _f_ =1 MHz 

Final Data Sheet 

Rev. 2.0, 2014-06-10 

7 

IDW20G120C5B 

5[th] Generation thinQ!™ 1200 V SiC Schottky Diode 

## Cinfineon 

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**----- Start of picture text -----**<br>
35<br>Per leg  TET<br>30<br>25<br>20<br>15<br>10<br>5<br>eee<br>0<br>0 200 400 600 800 1000 1200<br>VR [V]<br> [µJ]<br>C<br>E<br>**----- End of picture text -----**<br>


Figure 9. **Typical capacitively stored energy as function of reverse voltage, per leg,** _E_ C=f( _V_ R) 

Final Data Sheet 

Rev. 2.0, 2014-06-10 

8 

IDW20G120C5B 

## 5[th] Generation thinQ!™ 1200 V SiC Schottky Diode 

Final Data Sheet 

Rev. 2.0, 2014-06-10 

9 

IDW20G120C5B 

5[th] Generation thinQ!™ 1200 V SiC Schottky Diode 

**==> picture [122 x 54] intentionally omitted <==**

## **Revision History** 

## IDW20G120C5B 

## **Revision: 2014-06-10, Rev. 2.0** 

Previous Revision: 

|Revision|Date|Subjects(major changes since last version)|
|---|---|---|
|2.0|-|Final data sheet|



## **We Listen to Your Comments** 

Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com 

**Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Final Data Sheet 

Rev. 2.0, 2014-06-10 

10 



## Links

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- [Supplier page](https://es.farnell.com/infineon/idw20g120c5bfksa1/sic-schottky-diode-1-2kv-62a-to/dp/2709929)
---

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