# Fast / Ultrafast Diode, 650 V, 20 A, Dual Common Cathode, 2.2 V, 30 ns, 60 A

![Product image](https://novapart.co/image/farnell:2780782/)

**URL**: https://novapart.co/products/IDW20C65D2XKSA1/fast-ultrafast-diode-650-v-20-a-dual-common
**SKU**: IDW20C65D2XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €0.7760
**Stock**: 100+
**Lead Time**: 260 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:650V; Forward Current If(AV):20A; Diode Configuration:Dual Common Cathode; Forward Voltage VF Max:2.2V; Reverse Recovery Time trr Max:30ns; Forward

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3 Pin |
| Product Range | Rapid2 |
| Qualification | - |
| Diode Case Style | TO-247 |
| Diode Configuration | Dual Common Cathode |
| Forward Voltage Max | 2.2V |
| Forward Surge Current | 60A |
| Reverse Recovery Time | 30ns |
| Average Forward Current | 20A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2780782/)

## Diode 

IDW20C65D2 

## IDW20C65D2 

**==> picture [471 x 247] intentionally omitted <==**

**----- Start of picture text -----**<br>
Features: A1 A2<br>* Qualified according to JEDEC for target applications<br>* 650V Emitter Controlled technology<br>¢ Fast recovery<br>* Soft switching<br>¢ Low reverse recovery charge ( Q rr)<br>¢ Low forward voltage (__) V F and stable over temperature<br>¢ 175°C junction operating temperature<br>* Easy paralleling<br>C<br>* Pb-free lead plating<br>* RoHS compliant<br>Applications: _*<br>* Boost diode in CCM PFC sae<br>/<br>Package pin definition:<br>* Pin 1 - anode (A1) 1<br>¢ Pin 2 and backside - cathode (C) 2 3<br>**----- End of picture text -----**<br>


## **Key Performance and Package Parameters** 

|**Type**|**_V_rrm**|**_I_f**|**_V_f, ****_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IDW20C65D2|650V|2x 10A|1.6V|175°C|C20ED2|PG-TO247-3|



2 

IDW20C65D2 

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Emitter�Controlled�Diode�Rapid�2�Common�Cathode�Series 

## **Table of Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings (per leg)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistances (per leg)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 

3 

Rev.�2.1,��2014-12-09 

IDW20C65D2 

Emitter�Controlled�Diode�Rapid�2�Common�Cathode�Series 

**==> picture [146 x 65] intentionally omitted <==**

## **Maximum Ratings (per leg)** 

**For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Repetitivepeakreversevoltage,_T_vj≥25°C|_V_RRM||650|V|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||20.0<br>10.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||30.0|A|
|Diode surge non repetitive forward current<br>_T_C=25°C,_t_p=8.3ms,sinehalfwave|_I_FSM||60.0|A|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||68.0<br>34.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|



## **Thermal Resistances (per leg)** 

|**Thermal Resistances (per leg)**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max. Value**||**Unit**|
|**Characteristic**||||||
|Diode thermal resistance,1)<br>junction - case|_R_th(j-c)|||2.20|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W|



## **Electrical Characteristics (per leg), at Tvj = 25°C, unless otherwise specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**Static Characteristic**|||||||
|Diode forward voltage|_V_F|_I_F=10.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.65<br>1.65|2.20<br>-<br>-|V|
|Reverse leakage current2)|_I_R|_V_R=650V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>400.0|40.0<br>-|µA|



## **Electrical Characteristic, at** _**T**_ **vj = 25°C, unless otherwise specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**Dynamic Characteristic**|||||||
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|



- 1)�Please�be�aware�that�in�nonstandard�load�conditions,�due�to�high� _R_ th(j-c),� _T_ vj�close�to� _T_ vjmax�can�be�reached. 

> 2) Reverse leakage current per leg specified for operating conditions with zero voltage applied to the other leg. 

Rev.�2.1,��2014-12-09 

4 

IDW20C65D2 

Emitter�Controlled�Diode�Rapid�2�Common�Cathode�Series 

**==> picture [146 x 65] intentionally omitted <==**

## **Switching Characteristics (per leg), Inductive Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**Diode Characteristic, at****_T_vj = 25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=1000A/µs,<br>_L_σ=30nH,<br>_C_σ=40pF,<br>switch IGW50N65H5.|-|30|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.16|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|8.6|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-740|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=350A/µs,<br>_L_σ=30nH,<br>_C_σ=40pF,<br>switch IGW50N65H5.|-|50|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.13|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|4.3|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-130|-|A/µs|



## **Switching Characteristics (per leg), Inductive Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**Diode Characteristic, at****_T_vj = 175°C/125°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=1000A/µs,<br>_L_σ=30nH,<br>_C_σ=40pF,<br>switch IGW50N65H5.|-|36|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.23|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|10.6|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-680|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=125°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=350A/µs,<br>_L_σ=30nH,<br>_C_σ=40pF,<br>switch IGW50N65H5.|-|54|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.16|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|5.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-190|-|A/µs|



Rev.�2.1,��2014-12-09 

5 

Emitter Controlled Diode Rapid 2 Common IDW20C65D2 Cathode Series 

**==> picture [469 x 276] intentionally omitted <==**

**----- Start of picture text -----**<br>
70<br>60 x UA A eziil<br>\ SU 1 oa I Il<br>—_ wo Ee D = 0.5 es<br>== 50 \ Zzxa tT|PTITa ATI Ll ee 0.2 |<br>0.1<br>Zz \ ra ee ae |<br>0.05<br>E em TT CTCL<br>40 \ 2 ET cc 0.02 HL<br>7 \ ig set a cl 0.01 i<br>single pulse<br>30<br>i N a 0.1 sooa||<br>= F mall vical oad<br>= | eer ET TTTTT<br>oO ig 2) ZY | ||<br>O- 20 Pt PIN \ | Pa2 LAT20aTT eRe RAT<br>a 0A mi<br>2 ACCT] GEG]<br>10<br>S UE i: 1 LM 2 LL 3 Ei 4 5 6<br>ri[K/W]: 0.022723 0.47244 0.90303 0.744775 0.052669 1.6E-3<br>τ i[s]: 8.0E-6 1.2E-4 6.7E-4 4.5E-3 0.056023 2.034609<br>0 0.01<br>25 50 75 100 125 150 175 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>T C , CASE TEMPERATURE [°C] t p , PULSE WIDTH [s]<br>tot<br>P<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>


Figure 1. **Power dissipation per leg as a function of case temperature** ( _T_ vj ≤ 175°C) 

Figure 2. **Diode transient thermal impedance per leg as a function of pulse width** ( _D_ = _t_ p/T) 

**==> picture [476 x 283] intentionally omitted <==**

**----- Start of picture text -----**<br>
80 0.30<br>T vj I F T vj I F<br>T vj =175°C, I F =10A --- T vj =175°C, I F =10A<br>Ess] a<br>70<br>--- [|] 0.25 ==.<br>ts<br>60<br>_i ti [t] [t]<br>0.20<br>50<br>Ph LT | fe<br>imPIM pf(a peLe<br>O 40 X O 0.15 ——<br>30<br>0.10<br>Peerya 20 a _| rf§Lu<br>0.05<br>Po<br>10<br>0 0.00<br>200 600 1000 1400 1800 2200 2600 3000 200 600 1000 1400 1800 2200 2600 3000<br>dI F /dt , DIODE CURRENT SLOPE [A/us] dI F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>


Figure 3. **Typical reverse recovery time per leg as a function of diode current slope** ( _V_ R=400V) 

Figure 4. **Typical reverse recovery charge per leg as a function of diode current slope** ( _V_ R=400V) 

6 

IDW20C65D2 

**==> picture [489 x 623] intentionally omitted <==**

**----- Start of picture text -----**<br>
24 a 0 |<br>T vj I F T vj I F<br>22 ==--- T vj =175°C, I F =10A . 1 7 =eied T vj =175°C, I F =10A<br>-200<br>20<br>= 4<br>ee 18 S [ee] e e e -400 ><br>gf, 16 ) | iw) 8<br>-600<br>Se ee<br>14<br>> wi Le Za LL \<br>G 12 fo Le Ee -800 an<br>BS 10 fe N .<br>-1000<br>uw 8 | | | | | a<br>vA Ww \<br>aa Bf<br>i 6 ed -1200 \<br>= 4 Ty | | ||]<br>-1400<br>2 ae 8 \<br>0 -1600<br>200 600 1000 1400 1800 2200 2600 3000 200 600 1000 1400 1800 2200 2600 3000<br>dI F /dt , DIODE CURRENT SLOPE [A/us] dI F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 5.  Typical reverse recovery current per leg as a Figure 6.  Typical diode peak rate of fall of rev. rec.<br>function of diode current slope current per leg as a function of diode current<br>( V R=400V) slope<br>( V R=400V)<br>30 2.5<br>T vj I F<br>--- T vj {| = 175°C Es--- I F =10A a.<br>I F<br>— P e nf<br>24 2.0<br>,<br>Zz ‘ O<br>ef g 18 7 ffl7 deBo2 1.5  peepee b o<br>g<br>) es ee<br>g a a eeee<br><x<br>zt ef<br>= 12 = 1.0<br>| FEL<br>6 0.5<br>PLY PE tT<br>0 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>I F V F<br>**----- End of picture text -----**<br>


Figure 7. **Typical diode forward current per leg as a function of forward voltage** 

Figure 8. **Typical diode forward voltage per leg as a function of junction temperature** 

7 

IDW20C65D2 

## PG-TO247-3 

8 

IDW20C65D2 

**==> picture [146 x 65] intentionally omitted <==**

Emitter�Controlled�Diode�Rapid�2�Common�Cathode�Series 

**==> picture [481 x 318] intentionally omitted <==**

**----- Start of picture text -----**<br>
V GE (t) I,V<br>90%  V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10%  V GE t a b<br>I C (t) Q a Q b<br>dI<br>90%  I C 90%  I C<br>10%  I C 10%  I C t Figure C.  Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>GE (t)<br>**----- End of picture text -----**<br>


**==> picture [252 x 287] intentionally omitted <==**

**----- Start of picture text -----**<br>
V GE (t)<br>90%  V GE<br>10%  V GE<br>t<br>I C (t)<br>2%  I C t<br>V CE (t)<br>t 2 t 4<br>E off  [=] V CE x I C x d t E on  [=] V CE x I C x d t<br>t 1 t 3 2%  V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>


Figure D. 

**==> picture [102 x 46] intentionally omitted <==**

CC Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 

9 

Rev.�2.1,��2014-12-09 

IDW20C65D2 

**==> picture [146 x 65] intentionally omitted <==**

Emitter Controlled Diode Rapid 2 Common Cathode Series 

## Revision History 

## IDW20C65D2 

Revision: 2014-12-09, Rev. 2.1 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2014-12-02|Preliminarydata sheet|
|2.1|2014-12-09|Final data sheet|



## We Listen to Your Comments 

Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. 

Please send your proposal (including a reference to this document) to: erratum@infineon.com 

Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. 

## Legal Disclaimer 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## Information 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 

## Warnings 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Rev. 2.1,  2014-12-09 

10 



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