# Fast / Ultrafast Diode, 650 V, 40 A, Single, 2.2 V, 36 ns, 250 A

![Product image](https://novapart.co/image/farnell:2363267/)

**URL**: https://novapart.co/products/IDP40E65D2XKSA1/fast-ultrafast-diode-650-v-40-a-single-22-36-ns
**SKU**: IDP40E65D2XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €0.6020
**Stock**: 10+
**Lead Time**: 218 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:650V; Forward Current If(AV):40A; Diode Configuration:Single; Forward Voltage VF Max:2.2V; Reverse Recovery Time trr Max:36ns; Forward Surge Current Ifsm Max

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2 Pin |
| Product Range | - |
| Qualification | - |
| Diode Case Style | TO-220 |
| Diode Configuration | Single |
| Forward Voltage Max | 2.2V |
| Forward Surge Current | 250A |
| Reverse Recovery Time | 36ns |
| Average Forward Current | 40A |
| Operating Temperature Max | 175°C |
| Repetitive Peak Reverse Voltage | 650V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2363267/)

## Diode 

IDP40E65D2 

IDP40E65D2 

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**----- Start of picture text -----**<br>
Features:<br>A<br>* Qualified according to JEDEC for target applications<br>¢ 650 V Emitter Controlled technology<br>¢ Fast recovery<br>* Soft switching<br>« Low reverse recovery charge<br>* Low forward voltage and stable over temperature<br>¢ 175 °C junction operating temperature<br>* Easy paralleling<br>¢ Pb-free lead plating; ROHS compliant C<br>Applications: C<br>* Boost diode in CCM PFC<br>C<br>A<br>**----- End of picture text -----**<br>


|**Type**|**_V_rrm**|**_I_f**|**_V_f** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IDP40E65D2|650V|40A|1.6V|175°C|E40ED2|PG-TO220-2-1|



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IDP40E65D2 

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## Emitter�Controlled�Diode 

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Testing Conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 

3 

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## Emitter�Controlled�Diode 

## **Maximum�Ratings** 

**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** 

|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Repetitivepeak reverse voltage|_V_RRM||650|V|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||80.0<br>40.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||120.0|A|
|Diode surge non repetitive forward current<br>_T_C=25°C,_t_p=8.3ms,sinehalfwave|_I_FSM||250.0|A|
|Powerdissipation_T_C=25°C|_P_tot||200.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6 mm(0.063 in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|



## **Thermal�Resistance** 

|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|Diode thermal resistance,1)<br>junction - case|_R_th(j-c)|||0.75|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||62|K/W|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Diode forward voltage|_V_F|_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.60<br>1.65|2.20<br>-|V|
|Reverse leakage current|_I_R|_V_R=650V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>4000.0|µA|



## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|



1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached. 

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IDP40E65D2 

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## Emitter�Controlled�Diode 

## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=1000A/µs|-|36|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.40|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|22.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-10000|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=200A/µs|-|75|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.13|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|2.9|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-54|-|A/µs|



## **Switching�Characteristic,�Inductive�Load** 

|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DiodeCharacteristic,at****_T_vj=175°C/125°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=1000A/µs|-|60|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.14|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|32.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-8700|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=125°C,<br>_V_R=400V,<br>_I_F=40.0A,<br>_di_F_/dt_=200A/µs|-|83|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.32|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|5.6|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-51|-|A/µs|



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**----- Start of picture text -----**<br>
200 1 ooo<br>ooo<br>a eee<br>NP |<br>180160 PN\ fo fff | Ss=  | eel<br>we ZTwi<br>=2 140 Nee PETITE SAA |TL<br>. D=0.5<br>0.2<br>Y ea<br>120<br>‘pf [oo] LM4 LY 0.1 ll<br>api5oe 100 IN | Wwleoe 0.1 ceCAa8)!aa 0.050.02 TlCo|i<br>S 80 \ 7x= PLTTT| TTTae 0.01 EL|||<br>single pulse<br>60<br>a \ w pd a a e e<br>PN Ry R><br>40 . P ee<br>\ WAT ||| Needle<br>20<br>i: 1 2 3 4 5 6<br>ri[K/W]: 7.0E-3 0.18044 0.24076 0.30199 0.018044 1.7E-3<br>τ i[s]: 1.4E-5 2.4E-4 1.8E-3 7.8E-3 0.1290993 2.085894<br>a<br>0 0.01<br>25 50 75 100 125 150 175 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>T C , CASE TEMPERATURE [°C] t p , PULSE WIDTH [s]<br>Figure 1. Power dissipation as a function of case Figure 2. Diode transient thermal impedance as a<br>temperature function of pulse width<br>( T vj ≤ 175°C) ( D = t p/T)<br>120 1.4<br>Tj=25°C, IF = 40A Tj=25°C, IF = 40A<br>110 Tj=175°C, IF = 40A Tj=175°C, IF = 40A<br>ee ee 1.2 ae<br>100<br>2 90 : WwW=" —— -<br>_ PY PPey} 2 “y<br>1.0<br>ee \ 19)<br>80<br>kere eefosN Ir ’><br>Lu 70 | | 8 0.8 /<br>> SS ~ 7<br>Ss | VosMe ,<br>60<br>ce 50 ee| | 0.6 RY PP]<br>ee<br>ee =<br>40<br>— 0.4 Ay<br>ee :<br>oe 30<br>a 1 a ea<br>20<br>0.2<br>10<br>0 0.0<br>0 250 500 750 1000 1250 1500 1750 2000 0 250 500 750 1000 1250 1500 1750 2000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>tot<br>P<br>c)th(j-<br>Z<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>


Figure 3. Typical diode ( _V_ R=400V) 

Figure 4. 

( _V_ R=400V) 

6 

IDP40E65D2 

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**----- Start of picture text -----**<br>
50 0<br>Tj=25°C, IF = 40A Tj=25°C, IF = 40A<br>45 Tj=175°C, IF = 40A Tj=175°C, IF = 40A<br>-2000<br>= een<br>40<br>i ace a<br>4000<br>re e e<br>oa 35 ia 1 \<br>/ = 6000<br>e {tie<br>30<br>oO | ye Ee<br>etry -<br>25 8000<br>: s PAA<br>OBL 20 eoJ tsx: |<br>0000<br>WwBL 15 AT: 4Y| | tT dgie)<br>-12000<br>10<br>aa ty re<br>-14000<br>5<br>0 -16000<br>0 250 500 750 1000 1250 1500 1750 2000 0 250 500 750 1000 1250 1500 1750 2000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>dI<br>I rrm<br>**----- End of picture text -----**<br>


Figure 5. 

Figure 6. 

( _V_ R=400V) 

( _V_ R=400V) 

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**----- Start of picture text -----**<br>
120 2.50<br>Tj=25°C IF=20A<br>110 Tj=175°C IF=40A<br>2.25 IF=80A<br>100<br>90 2.00<br>bE 80 A—t Lu<br>iu / xt 1.75<br>eo] | | |ff<br>70<br>oe ; 5<br>e 60 Q 1.50<br><x 50 | ge Ee<br>1.25<br>oO 40 e)<br>30 1.00<br>20<br>0.75<br>10<br><a<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>


Figure 7. 

Figure 8. 

7 

IDP40E65D2 

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## Emitter�Controlled�Diode 

## PG-TO220-2-1 

8 

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IDP40E65D2 

Emitter�Controlled�Diode 

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v GE (t)<br>90%  V GE<br>10%  V GE t<br>i C (t)<br>90%  I C 90%  I C<br>10%  I C 10%  I C t<br>v CE (t)<br>t d(off) t f t d(on) t r t<br>v GE (t)<br>90%  V GE<br>10%  V GE t<br>i C (t)<br>2%  I C t<br>v CE (t)<br>t 2 t 4<br>E off  [=] t 1∫ V CE x I C x d t E on  [=] t 3∫ V CE x I C x d t 2%  V CE t<br>t 1 t 2 t 3 t 4<br>**----- End of picture text -----**<br>


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CC<br>**----- End of picture text -----**<br>


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## Emitter Controlled Diode 

## Revision History 

## IDP40E65D2 

Revision: 2014-03-31, Rev. 2.2 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|1.1|2013-03-14|Preliminarydata sheet|
|1.2|2013-03-14|-|
|2.1|2013-12-16|Final DS / New MarkingPattern|
|2.2|2014-03-31|Value VFmax limit accordingBE test|



## We Listen to Your Comments 

Any information within this document that you feel is wrong, unclear or missing at all ? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com 

## Published by 

Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. 

## Legal Disclaimer 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## Information 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 

## Warnings 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

Rev. 2.2,  2014-03-31 

10 



## Links

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- [Supplier page](https://es.farnell.com/infineon/idp40e65d2xksa1/diode-650v-40a-to220-2/dp/2363267)
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