# Fast / Ultrafast Diode, 1.2 kV, 50 A, Single, 2.15 V, 380 ns, 102 A

![Product image](https://novapart.co/image/farnell:2480925/)

**URL**: https://novapart.co/products/IDP30E120XKSA1/fast-ultrafast-diode-12-kv-50-a-single-215-v-380
**SKU**: IDP30E120XKSA1
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || Diodes & Rectifiers || Fast & Ultrafast Recovery Rectifier Diodes
**Price**: €1.2000
**Stock**: 500+
**Lead Time**: 218 days (indicative)

## Description

Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):50A; Diode Configuration:Single; Forward Voltage VF Max:2.15V; Reverse Recovery Time trr Max:380ns; Forward Surge

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 2 Pin |
| Product Range | IDP30 |
| Qualification | - |
| Diode Case Style | TO-220 |
| Diode Configuration | Single |
| Forward Voltage Max | 2.15V |
| Forward Surge Current | 102A |
| Reverse Recovery Time | 380ns |
| Average Forward Current | 50A |
| Operating Temperature Max | 150°C |
| Repetitive Peak Reverse Voltage | 1.2kV |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2480925/)

**IDP30E120** 

## **Fast Switching Diode** 

## **Feature s** 

- 1200 V diode technology 

- Fast recovery 

- Soft switching 

- Low reverse recovery charge 

## **Product Summary** 

|_V_RRM|1200|V|
|---|---|---|
|_I_F|30|A|
|_V_F|1.65|V|
|_T_jmax|150|°C|



## PG-TO220-2 

- Low forward voltage 

- Easy paralleling 

- Pb-free lead plating; RoHS compliant 

- Halogen-free according to IEC61249-2-21 

- Qualified according to JEDEC for target applications 

|**Type**|**Package**|**Ordering Code**|**Marking**|**Pin 1**|**PIN 2**|**PIN 3**|
|---|---|---|---|---|---|---|
|IDP30E120|PG-TO220-2|-|D30E120|C|A|-|



**Maximum Ratings** , at _T_ j = 25 °C, unless otherwise specified 

|j = 25 °C, unless otherwise specified<br>**Parameter**|j = 25 °C, unless otherwise specified<br>**Symbol**<br>a|j = 25 °C, unless otherwise specified<br>**Value**<br>|**Unit**|
|---|---|---|---|
|Repetitive peak reverse voltage|_V_RRM<br>|1200<br>|V|
|Continous forward current<br>_T_C=25°C<br>_T_C=90°C|_I_F<br>Pf|50<br>30<br>Pf|A|
|Surge non repetitive forward current<br>_T_C=25°C,_t_p=10 ms, sine halfwave|_I_FSM|102||
|Maximum repetitive forward current<br>_T_C=25°C,_t_plimited by_T_jmax,_D_=0.5|_I_FRM|76.5||
|Power dissipation<br>_T_C=25°C<br>_T_C=90°C|_P_tot|138<br>66|W|
|Operating and storage temperature|_T_j ,_T_stg|-55...+150|°C|
|Soldering temperature<br>wavesoldering,1.6mm (0.063 in.) from case for 10s|j ,stg<br>_T_S<br>ef|260<br>ef|°C|



Rev.2. 3 

200 9 -0 8 - 19 

Page 1 

**IDP30E120** 

## **Thermal Characteristics** 

|**Thermal Characteristics**<br>**Parameter**<br>**Characteristics**|**Symbol**|**min.**|**Values**<br>**typ.**|**max.**|**Unit**|
|---|---|---|---|---|---|
|Thermal resistance, junction - case|_R_thJC|-|-|0.9|K/W|
|Thermal resistance, junction - ambient, leaded|_R_thJA|-|-|62||
|SMD version, device on PCB:<br>@ min. footprint<br>@ 6 cm2cooling area1)|_R_thJA|-<br>-|-<br>35|62<br>-||



|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified|||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|
|||**min.**|**typ.**|**max.**||
|**Static Characteristics**||||||
|Reverse leakage current|_I_R||||µA|
|_V_R=1200V,_T_j=25°C||-|-|100||
|_V_R=1200V,_T_j=150°C||-|-|2500||
|Forward voltage drop|_V_F||||V|
|_I_F=30A,_T_j=25°C||-|1.65|2.15||
|_I_F=30A,_T_j=150°C||-|1.7|-||



1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 

Rev.2. 3 

200 9 -0 8 - 19 

Page 2 

**IDP30E120** 

**Electrical Characteristics** , at _T_ j = 25 °C, unless otherwise specified 

|**Electrical Characteristics**, at_T_j= 25 °C, unless|otherwise s|pecified|pecified|pecified||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**Dynamic Characteristics**||||||
|Reverse recovery time<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=25°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=125°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=150°C|_t_rr|-<br>-<br>-|243<br>355<br>380|-<br>-<br>-|ns|
|Peak reverse current<br>_V_R=800V,_I_F= 30 A, d_i_F/d_t_=850A/µs,_T_j=25°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=125°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=150°C|_I_rrm|-<br>-<br>-|23.7<br>28.3<br>29.5|-<br>-<br>-|A|
|Reverse recovery charge<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=25°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=125°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=150°C|_Q_rr|-<br>-<br>-|2630<br>4700<br>5200|-<br>-<br>-|nC|
|Reverse recovery softness factor<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=25°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=125°C<br>_V_R=800V,_I_F=30A, d_i_F/d_t_=850A/µs,_T_j=150°C|_S_|-<br>-<br>-|6<br>7.4<br>7.5|-<br>-<br>-||



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Page 3 

**IDP30E120** 

## **1 Power dissipation** 

_P_ tot = _f_ ( _T_ C) 

parameter: Tj ≤ 150°C 

**==> picture [232 x 266] intentionally omitted <==**

**----- Start of picture text -----**<br>
140<br> W<br>120<br>110<br>100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>25 50 75 100  °C 150<br>T C<br>tot<br>P<br>**----- End of picture text -----**<br>


## **3 Typ. diode forward current** 

_I_ F = _f_ ( _V_ F) 

## **2 Diode forward current** 

_I_ F = f( _T_ C) parameter: _T_ j≤ 150°C 

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**----- Start of picture text -----**<br>
55<br> A<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>25 50 75 100  °C 150<br>T C<br>I F<br>**----- End of picture text -----**<br>


**4 Typ. diode forward voltage** _V_ F = _f_ ( _T_ j) 

**==> picture [485 x 268] intentionally omitted <==**

**----- Start of picture text -----**<br>
90 2.4<br> A 60A<br> V<br>-55°C<br>70<br>25°C<br>100°C<br>60 150 ° C 2<br>50<br>1.8<br>30A<br>40<br>30 1.6<br>20 15A<br>1.4<br>10<br>0 1.2<br>0 0.5 1 1.5 2  V 3 -60 -20 20 60 100  °C 160<br>V F T j<br>F<br>I F V<br>**----- End of picture text -----**<br>


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**IDP30E120** 

## **5 Typ. reverse recovery time** 

_t_ rr = _f_ (d _i_ F/d _t_ ) 

parameter: _V_ R = 800V, _T_ j = 125°C 

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**----- Start of picture text -----**<br>
1100<br> ns<br>900<br>60A<br>800<br>30A<br>15A<br>700<br>600<br>500<br>400<br>300<br>200<br>200 300 400 500 600 700 800  A/µs 1000<br> d i F/d t<br>t rr<br>**----- End of picture text -----**<br>


## **7 Typ. reverse recovery current** 

_I_ rr = _f_ (d _i_ F/d _t_ ) 

parameter: _V_ R = 800V, _T_ j = 125°C 

**==> picture [234 x 266] intentionally omitted <==**

**----- Start of picture text -----**<br>
35<br> A<br>60A<br>30A<br>15A<br>25<br>20<br>15<br>10<br>5<br>200 300 400 500 600 700 800  A/µs 1000<br> d i F/d t<br>I rr<br>**----- End of picture text -----**<br>


## **6 Typ. reverse recovery charge** 

_Q_ rr= _f_ (d _i_ F/d _t_ ) 

parameter: _V_ R = 800V, _T_ j = 125 °C 

**==> picture [234 x 267] intentionally omitted <==**

**----- Start of picture text -----**<br>
6500<br> nC<br>60A<br>5500<br>5000<br>30A<br>4500<br>4000<br>3500 15A<br>3000<br>2500<br>200 300 400 500 600 700 800  A/µs 1000<br> d i F/d t<br>rr<br>Q<br>**----- End of picture text -----**<br>


## **8 Typ. reverse recovery softness factor** 

S = f(d _i_ F/d _t_ ) 

parameter: _V_ R = 800V, _T_ j = 125°C 

**==> picture [234 x 267] intentionally omitted <==**

**----- Start of picture text -----**<br>
18<br>14<br>60A<br>12 30A<br>15A<br>10<br>8<br>6<br>4<br>200 300 400 500 600 700 800  A/µs 1000<br> d i F/d t<br>S<br>**----- End of picture text -----**<br>


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**IDP30E120** 

## **9 Max. transient thermal impedance** 

_Z_ thJC = _f_ ( _t_ p) 

parameter : _D_ = _t_ p/ _T_ 

**==> picture [235 x 276] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 1  IDP30E120<br>K/W<br>10 0<br>10 -1<br>D = 0.50<br>10 -2  0.20<br>0.10<br>0.05<br>10 -3  0.02<br>0.01<br>single pulse<br>10 -4<br>10  [-7 ] 10  [-6 ] 10  [-5 ] 10  [-4 ] 10  [-3 ] 10  [-2 ] s 10  [0 ]<br>t<br>p<br>thJC<br>Z<br>**----- End of picture text -----**<br>


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**IDP 30 E120** 

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**----- Start of picture text -----**<br>
TO-220-2<br>**----- End of picture text -----**<br>


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**IDP 30 E120** 

Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

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## Links

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- [Supplier page](https://es.farnell.com/infineon/idp30e120xksa1/diode-std-recovery-50a-1-2kv-to/dp/2480925)
---

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